CN109678522A - A kind of normal pressure solid-phase sintered silicon carbide film support and preparation method thereof - Google Patents
A kind of normal pressure solid-phase sintered silicon carbide film support and preparation method thereof Download PDFInfo
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- CN109678522A CN109678522A CN201811564686.1A CN201811564686A CN109678522A CN 109678522 A CN109678522 A CN 109678522A CN 201811564686 A CN201811564686 A CN 201811564686A CN 109678522 A CN109678522 A CN 109678522A
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Abstract
The present invention relates to a kind of normal pressure solid-phase sintered silicon carbide film supports and preparation method thereof, the preparation method includes: to mix one of silicon carbide in submicro level powder or nanometer silicon carbide powder, micron order carborundum powder, carbon dust, sintering aid and organic binder, obtain mixed powder, the mass ratio of one of the silicon carbide in submicro level powder or nanometer silicon carbide powder and micron order carborundum powder is 1:(3~40), preferably 1:(3~25)；After plasticiser, lubricant and water mixing are added in gained mixed powder, water base silicon carbide pug is obtained；The water base silicon carbide pug of gained is subjected to extrusion molding and drying, then is warming up to 1750 DEG C~2200 DEG C sintering, obtains the silicon carbide film supporter.
Description
Technical field
The present invention relates to a kind of normal pressure solid-phase sintered silicon carbide film supports and preparation method thereof, belong to ceramic membrane filter skill
Art field.
Background technique
Ceramic membrane filter technology is the best high-temperature flue gas processing technique of current commercial prospect universally recognized in the world.With
Other purification styles such as bag-type dusting, electrostatic precipitation are compared, and asymmetric ceramic membrane is in high temperature resistant, corrosion-resistant, filtering accuracy and effect
Rate etc. has a clear superiority.The material of current asymmetric ceramic membrane includes Al2O3, mullite, cordierite, TiO2、ZrO2、
SiC etc..Membrane of oxide ceramics is generally chiefly used in solid- liquid separation, such as water process ceramic membrane.Silicon carbide ceramic membrane and oxide ceramics
Film is compared, and advantage is had more in terms of elevated temperature strength, thermal shock resistance and corrosion resistance characteristic, is ideal high-temperature-resistant filtering material, furthermore
It also can be widely used to high temperature and high pressure gas purification, gas solid separation or the material recycle in other fields such as metallurgy, petroleum, chemical industry.
Asymmetric silicon carbide ceramic membrane is made of the micro-filtration film layer of dust separation with silicon carbide film supporter, in which: carbonization
Silicon fiml supporter is that have excellent permeability, provide the carborundum porous ceramics of intensity for asymmetric ceramic membrane, and performance is direct
Determine the filter effect and service life of ceramic-film tube.Current commercialized ceramic film support is mainly oxide material, state
Only have several companies on border and produces silicon carbide film supporter, including Pall company, the U.S., LiqTech company, Denmark, Germany
Atech company, Shandong Gong Tao institute, long my high-tech etc., wherein the asymmetric silicon carbide ceramic membrane of U.S. Pall company manufacture is wide
It is general to be applied to the high-temperature gas-solids isolation of purified field such as traditional thermal power plant and novel biomass power generation, occupy the main city in the whole world
?.However, being that oxide combines carbonization for the object phase composition of current commercialized asymmetric silicon carbide ceramic support body
Silicon, the silicon carbide film supporter produced such as Pall company are the carborundum porous ceramics that clay combines.Recently as China pair
The pay attention to day by day of environmental problem, extensive concern of the SiC film support material by studies in China person.2000, big rate was handed in Xi'an
First carried out the research of SiC film support, hereafter Tsinghua University, University Of Hainan, Shenyang metal institute, Inst. of Ceramics, Jiangsu Prov.,
Feshan Ceramics Inst, Shandong Gong Tao institute etc. have also carried out the research and development of SiC film support, studied silicon carbide
Film support is oxide combined silicon carbide film support.That there are softening temperatures is low for oxide combined silicon carbide film support,
The problem of chemical stability poor (especially common silica phase in conjunction with clay), therefore oxide combined silicon carbide film supports
Body is no more than 800 DEG C using temperature.Meanwhile high temperature, adverse circumstances use process in, oxide combined silicon carbide film branch
Apparent creep and corrosion can occur for support body, lead to the damage inactivation of supporter, and then reduce the usage service life.
Summary of the invention
The problems such as using low temperature, poor corrosion resistance for conventional oxide silicon carbide film support, it is of the invention
It is designed to provide a kind of silicon carbide film supporter and preparation method thereof.
On the one hand, the present invention provides a kind of preparation methods of silicon carbide film supporter, comprising:
By one of silicon carbide in submicro level powder or nanometer silicon carbide powder, micron order carborundum powder, carbon dust, sintering aid and
Organic binder mixing, obtains mixed powder, one of the silicon carbide in submicro level powder or nanometer silicon carbide powder and micro-
The mass ratio of meter level carborundum powder is 1:(3~40), preferably 1:(3~25)；
After plasticiser, lubricant and water mixing are added in gained mixed powder, water base silicon carbide pug is obtained；
The water base silicon carbide pug of gained is subjected to extrusion molding and drying, then is warming up to 1750 DEG C~2200 DEG C sintering, obtains institute
State silicon carbide film supporter.
In the disclosure, silicon carbide film supporter is prepared using normal pressure solid-phase sintering method, by control mixed powder
The partial size of micron order silicon carbide powder, submicron order (or nanoscale) and micron order carborundum powder mass ratio (1:(3~40),
Preferably 1:(3~25)) control silicon carbide film supporter porosity (25%~45%), pore size (0.1 μm~20 μm)
Pass through the size controlling of the micron order silicon carbide powder in mixed powder.Moreover, the carbon prepared using normal pressure solid-phase sintering method
SiClx film support have excellent high temperature strength and corrosion resistance, be significantly better than oxide combined silicon carbide film support with
Silicon carbide reaction-sintered film support.
Preferably, the median of the micron order carborundum powder is 1.0~100 μm；The silicon carbide in submicro level powder
Median be 0.1~1.0 μm；The median of the nanometer silicon carbide powder >=5nm and < 100nm.
Preferably, the sintering aid is boron carbide powder or/and boron powder, additional amount is silicon carbide in submicro level powder or nanometer
0.1wt.%~the 3.0wt.% of one of grade carborundum powder and micron order carborundum powder gross mass.
Preferably, the additional amount of the carbon dust is one of silicon carbide in submicro level powder or nanometer silicon carbide powder and micro-
0.5wt.%~7wt.% of meter level carborundum powder gross mass.
Preferably, the binder is selected from polyvinyl alcohol, at least one of hydroxymethyl cellulose and starch, additional amount is
1~15wt.% of one of silicon carbide in submicro level powder or nanometer silicon carbide powder and micron order carborundum powder gross mass.
Preferably, the plasticiser in o- benzoic acid diethylester, fatty alcohol binary acid rouge and polyethylene glycol at least
One kind, additional amount are 1wt.%~15wt.% of mixed powder gross mass；The lubricant is selected from stearic phthalein amine, polyethylene wax
At least one of with emulsified wax, additional amount is 0.5wt.%~5wt.% of mixed powder gross mass；The addition of the water
Amount is 5wt.%~25wt.% of mixed powder gross mass.
Preferably, the atmosphere of the sintering is inert atmosphere, preferably argon gas；The time of the sintering is 0.5~3 small
When.
On the other hand, the present invention also provides a kind of according to the above preparation method preparation silicon carbide film supporter,
The porosity of the silicon carbide film supporter is 25%~45%, and aperture is 0.1 μm~20 μm.
Preferably, the three-point bending resistance intensity under the room temperature (20 DEG C) of the silicon carbide film supporter is not less than 60MPa,
Three-point bending resistance intensity at 1000 DEG C is not less than 50MPa.
Preferably, the silicon carbide film supporter is in 10wt%, 100 DEG C of H2SO4Corrode 12 hours weightlessness in aqueous solution not
More than 1wt.%, corrodes 12 hours weightlessness in 1wt%, 100 DEG C of NaOH aqueous solution and be no more than 1wt.%.
In the present invention, due to being strong―binding interface between crystal grain in the silicon carbide film supporter of normal pressure solid-phase sintering, and
Crystal boundary is clean, compared with other common industrial ceramic materials, high temperature resistant, in terms of have significant advantage, by it
The elevated temperature strength and chemical corrosion resistance of asymmetric silicon carbide ceramic membrane can be significantly improved as film support material, and then are avoided
Oxide combined silicon carbide film support uses the problems such as low temperature, poor corrosion resistance, is conducive to significantly promote asymmetric carbon
Service life of the SiClx ceramic membrane under high temperature, corrosive environment.
Detailed description of the invention
Fig. 1 is the microsctructural photograph of normal pressure solid-phase sintered silicon carbide film support prepared by embodiment 1.
Specific embodiment
The present invention is further illustrated below by way of following embodiments, it should be appreciated that following embodiments are merely to illustrate this
Invention, is not intended to limit the present invention.
In the disclosure, the porosity of normal pressure solid-phase sintered silicon carbide film support can be 25%-45%, and aperture can be
0.1μm-20μm。
In the disclosure, silicon carbide film supporter is prepared using normal pressure solid-phase sintering, gained silicon carbide film supporter has
High temperature resistant, corrosion resistant feature are obviously improved use problem and the service life of silicon carbide film supporter.In optional embodiment
In, the room temperature three-point bending resistance intensity of silicon carbide film supporter is not less than 60MPa, the height of normal pressure solid-phase sintered silicon carbide film support
Warm (1000 DEG C) three-point bending resistance intensity is not less than 50MPa.In alternative embodiments, silicon carbide film supporter 10wt%,
100 DEG C of H2SO4Corrode 12 hours weightlessness in aqueous solution and be no more than 1wt.%, corrodes in 1wt%, 100 DEG C of NaOH aqueous solution
12 hours weightless no more than 1wt.%.
In an embodiment of the present invention, with submicron order (or nanoscale) carborundum powder, micron order carborundum powder, carbon
Powder, boron carbide powder (or boron powder) and organic binder are material powder, and plasticiser, lubricant, water are sequentially added after being sufficiently mixed,
It is kneaded after mixing evenly and obtains water base silicon carbide pug, silicon carbide pug obtains normal pressure after extrusion molding, drying, high temperature sintering
Solid-phase sintered silicon carbide film support.Illustrate to following exemplary the preparation method of normal pressure solid-phase sintered silicon carbide film support.
By submicron order (or nanoscale) carborundum powder, micron order carborundum powder, carbon dust, boron carbide powder (or boron powder) and have
Machine binder successively pours into batch mixer, is sufficiently mixed, and obtains mixed powder.Wherein, binder includes but is not limited to polyethylene
Alcohol, hydroxymethyl cellulose and starch.The additional amount of binder can be micron order SiC powder and submicron order (or nano grade Sic powder)
1~15wt.% of gross mass.Porosity passes through the partial size of the micron order silicon carbide powder in raw material, submicron order (or nanometer
Grade) it is controlled with micron order carborundum powder mass ratio, the size controlling that pore size passes through the micron order silicon carbide powder in raw material.
Wherein, the median of micron order SiC powder can be 1.0~100 μm.The median of submicron order SiC powder can be 0.1~1.0 μ
m.Nanometer grade powder is that median is >=5nm and < 100nm.Wherein, micron order SiC powder and submicron order SiC powder (or nanometer
Grade SiC powder) mass ratio be (40~3): 1, preferably (25~3): 1, be to reach specific hole knot in a wider context
Structure (porosity or aperture).If the mass ratio of micron order SiC powder and submicron order SiC powder (or nano grade Sic powder) be more than 40,
Then SiC intercrystalline combination is weaker in normal pressure solid-phase sintered silicon carbide film support, and intensity is too low；If micron order SiC powder and sub-
The mass ratio of micron order SiC powder (or nano grade Sic powder) is lower than 3, then porosity in normal pressure solid-phase sintered silicon carbide film support
Too low, permeance property is poor.Wherein, B4The quality of C powder or boron powder is micron order SiC powder and submicron order (or nano grade Sic powder)
0.1wt.%~3.0wt.% of gross mass, the quality of carbon dust are that micron order SiC powder and submicron order (or nano grade Sic powder) are total
0.5wt.%~7wt.% of quality.
Be added into mixed powder account for 1wt.%~15wt.% plasticiser of mixed powder gross mass, 0.5wt.%~
The water of 5wt.% lubricant, 5wt.%~25wt.%, is kneaded on pug mill, obtains water base silicon carbide pug.Wherein, it is plasticized
Agent includes but is not limited to o- benzoic acid diethylester, fatty alcohol binary acid rouge and polyethylene glycol.Lubricant includes but is not limited to tristearin
Phthalein amine, polyethylene wax and emulsified wax.
Water base silicon carbide pug is subjected to extrusion molding, obtains the wet base of normal pressure solid-phase sintered silicon carbide film support.
The wet base of normal pressure solid-phase sintered silicon carbide film support is dry, heating sintering obtains normal pressure solid-phase sintered silicon carbide
Film support.Wherein, sintering temperature can be 1750~2200 DEG C, and sintering time can be 0.5~3 hour, and sintering atmosphere is inertia
Atmosphere (for example, argon gas, helium etc.).
Beneficial effects of the present invention:
(1) pore size of normal pressure solid-phase sintered silicon carbide film support of the present invention passes through micron order silicon carbide powder
The porosity of size controlling, normal pressure solid-phase sintered silicon carbide film support passes through the partial size of micron order silicon carbide powder, sub-micron
Grade (or nanoscale) and micron order carborundum powder mass ratio control；
(2) normal pressure solid-phase sintered silicon carbide film support of the present invention and traditional oxide combined silicon carbide film support
It compares, there is better elevated temperature strength；
(3) normal pressure solid-phase sintered silicon carbide film support of the present invention and traditional oxide combined silicon carbide film support
It compares, there is superior corrosion resistance.
Enumerate embodiment further below with the present invention will be described in detail.It will similarly be understood that following embodiment is served only for this
Invention is further described, and should not be understood as limiting the scope of the invention, those skilled in the art is according to this hair
Some nonessential modifications and adaptations that bright above content is made all belong to the scope of protection of the present invention.Following examples are specific
Technological parameter etc. is also only an example in OK range, i.e. those skilled in the art can be done properly by the explanation of this paper
In the range of select, and do not really want to be defined in hereafter exemplary specific value.
Embodiment 1
The 20 μm of silicon carbide powders and 0.2 μm of silicon carbide powder for being 8:1 by mass ratio, and account for silicon carbide powder gross mass
The carbon dust of 1.0wt.%, account for silicon carbide powder gross mass 0.6wt.% boron carbide powder and polyvinyl alcohol pour into batch mixer,
It is sufficiently mixed, obtains mixed powder.Into mixed powder be added account for its quality 4wt.% o- benzoic acid diethylester, 2wt.% it is hard
The water of rouge phthalein amine, 16wt.%, is kneaded on pug mill, obtains water base silicon carbide pug.Water base silicon carbide pug is squeezed out
Molding, obtains the wet base of normal pressure solid-phase sintered silicon carbide film support.After the wet base of normal pressure solid-phase sintered silicon carbide film support is dry,
In argon gas, at 2000 DEG C, high temperature sintering 1 hour, normal pressure solid-phase sintered silicon carbide film support is obtained.Normal pressure solid-phase sintering carbon
The structure of SiClx film support and performance parameter are as shown in table 1；The microstructure of normal pressure solid-phase sintered silicon carbide film support is shone
Piece is as shown in Figure 1, stomata is uniformly distributed among silicon carbide film supporter as can be known from Fig. 1, and is combined between carborundum grain
Closely.
Embodiment 2
The 1 μm of silicon carbide powder and 5nm silicon carbide powder for being 40:1 by mass ratio, and account for silicon carbide powder gross mass
The carbon dust of 7.0wt.%, account for silicon carbide powder gross mass 0.1wt.% boron carbide powder and hydroxymethyl cellulose successively pour into it is mixed
It in material machine, is sufficiently mixed, obtains mixed powder.Into mixed powder be added account for its quality 1wt.% fatty alcohol binary acid rouge,
The water of 0.5wt.% polyethylene wax, 25wt.%, is kneaded on pug mill, obtains water base silicon carbide pug.By water base silicon carbide mud
Material carries out extrusion molding, obtains the wet base of normal pressure solid-phase sintered silicon carbide film support.Normal pressure solid-phase sintered silicon carbide film support
After wet base is dry, in argon gas, under 1750 DEG C of degree, high temperature sintering 0.5 hour, the support of normal pressure solid-phase sintered silicon carbide film is obtained
Body.
Embodiment 3
The 100 μm of silicon carbide powders and 1 μm of silicon carbide powder for being 3:1 by mass ratio, and account for silicon carbide powder gross mass
The carbon dust of 0.5wt.%, account for silicon carbide powder gross mass 3.0wt.% boron carbide powder and starch successively pour into batch mixer,
It is sufficiently mixed, obtains mixed powder.The 15wt.% polyethylene glycol for accounting for its quality, 5.0wt.% emulsification are added into mixed powder
The water of paraffin, 5wt.%, is kneaded on pug mill, obtains water base silicon carbide pug.Water base silicon carbide pug is extruded into
Type obtains the wet base of normal pressure solid-phase sintered silicon carbide film support.After the wet base of normal pressure solid-phase sintered silicon carbide film support is dry,
In argon gas, under 2200 DEG C of degree, high temperature sintering 3 hours, normal pressure solid-phase sintered silicon carbide film support is obtained.
Embodiment 4
The 10 μm of silicon carbide powders and 0.1 μm of silicon carbide powder for being 15:1 by mass ratio, and account for silicon carbide powder gross mass
The carbon dust of 2.0wt.%, account for silicon carbide powder gross mass 0.9wt.% boron carbide powder and starch successively pour into batch mixer,
It is sufficiently mixed, obtains mixed powder.6wt.% o- benzoic acid diethylester, the 1.8wt.% for accounting for its quality are added into mixed powder
The water of stearic phthalein amine, 15wt.%, is kneaded on pug mill, obtains water base silicon carbide pug.Water base silicon carbide pug is squeezed
It forms out, obtains the wet base of normal pressure solid-phase sintered silicon carbide film support.The wet base of normal pressure solid-phase sintered silicon carbide film support is dry
Afterwards, in argon gas, at 1900 DEG C, high temperature sintering 1.5 hours, normal pressure solid-phase sintered silicon carbide film support is obtained.
Embodiment 5
The 50 μm of silicon carbide powders and 100nm silicon carbide powder for being 20:1 by mass ratio, and account for silicon carbide powder gross mass
The carbon dust of 4.0wt.%, account for silicon carbide powder gross mass 1.6wt.% boron carbide powder and hydroxymethyl cellulose successively pour into it is mixed
It in material machine, is sufficiently mixed, obtains mixed powder.Into mixed powder be added account for its quality 9wt.% fatty alcohol binary acid rouge,
The water of 2.4wt.% polyethylene wax, 18wt.%, is kneaded on pug mill, obtains water base silicon carbide pug.By water base silicon carbide mud
Material carries out extrusion molding, obtains the wet base of normal pressure solid-phase sintered silicon carbide film support.Normal pressure solid-phase sintered silicon carbide film support
After wet base is dry, in argon gas, at 2050 DEG C, high temperature sintering 2.0 hours, normal pressure solid-phase sintered silicon carbide film support is obtained.
Embodiment 6
The 80 μm of silicon carbide powders and 0.2 μm of silicon carbide powder for being 30:1 by mass ratio, and account for silicon carbide powder gross mass
The carbon dust of 6.0wt.%, account for silicon carbide powder gross mass 2.2wt.% boron carbide powder and polyvinyl alcohol successively pour into batch mixer
In, it is sufficiently mixed, obtains mixed powder.The 12wt.% polyethylene glycol for accounting for its quality, 4.0wt.% cream are added into mixed powder
The water of fossil waxes, 22wt.%, is kneaded on pug mill, obtains water base silicon carbide pug.Water base silicon carbide pug is squeezed out
Molding, obtains the wet base of normal pressure solid-phase sintered silicon carbide film support.After the wet base of normal pressure solid-phase sintered silicon carbide film support is dry,
In argon gas, under 2100 DEG C of degree, high temperature sintering 2.5 hours, normal pressure solid-phase sintered silicon carbide film support is obtained.
Comparative example 1
By 80 μm of silicon carbide powders, with the carbon dust of the 6.0wt.% for accounting for silicon carbide powder gross mass, account for silicon carbide powder gross mass
2.2wt.% boron carbide powder and polyvinyl alcohol successively pour into batch mixer, be sufficiently mixed, obtain mixed powder.To mixed powder
The water of the 12wt.% polyethylene glycol for accounting for its quality, 4.0wt.% emulsified wax, 22wt.% are added in body, is mixed on pug mill
Refining, obtains water base silicon carbide pug.Water base silicon carbide pug is subjected to extrusion molding, obtains normal pressure solid-phase sintered silicon carbide film branch
The wet base of support body.After the wet base of normal pressure solid-phase sintered silicon carbide film support is dry, in argon gas, under 2100 DEG C of degree, high temperature sintering 2.5
Hour, obtain normal pressure solid-phase sintered silicon carbide film support.
Table 1 is the structure and performance parameter of the silicon carbide film supporter of normal pressure solid-phase sintering prepared by the present invention preparation:.
" sour corrosion is weightless " is referred in 10wt%, 100 DEG C of H in table 12SO4Corrode 12 hours weightlessness in aqueous solution
(wt.%)." alkalinity corrosion weight loss/wt% " refers to corroding 12 hours weightlessness in 1wt%, 100 DEG C of NaOH aqueous solution
(wt.%).The present invention selects corrosion front and back weight-loss ratio higher to measure corrosion resistance reliability.
Claims (10)
1. a kind of preparation method of silicon carbide film supporter characterized by comprising
By one of silicon carbide in submicro level powder or nanometer silicon carbide powder, micron order carborundum powder, carbon dust, sintering aid and
Organic binder mixing, obtains mixed powder, one of the silicon carbide in submicro level powder or nanometer silicon carbide powder and micro-
The mass ratio of meter level carborundum powder is 1:(3~40), preferably 1:(3~25)；
After plasticiser, lubricant and water mixing are added in gained mixed powder, water base silicon carbide pug is obtained；
The water base silicon carbide pug of gained is subjected to extrusion molding and drying, then is warming up to 1750 DEG C~2200 DEG C sintering, obtains institute
State silicon carbide film supporter.
2. preparation method according to claim 1, which is characterized in that the median of the micron order carborundum powder is
1.0~100 μm；The median of the silicon carbide in submicro level powder is 0.1~1.0 μm；In the nanometer silicon carbide powder
Position partial size >=5 nm and 100 nm of <.
3. preparation method according to claim 1 or 2, which is characterized in that the sintering aid is boron carbide powder or/and boron
Powder, additional amount are one of silicon carbide in submicro level powder or nanometer silicon carbide powder and micron order carborundum powder gross mass
The wt.% of 0.1 wt.%~3.0.
4. preparation method according to any one of claim 1-3, which is characterized in that the additional amount of the carbon dust is sub-micro
0.5 wt.%~7 of one of meter level carborundum powder or nanometer silicon carbide powder and micron order carborundum powder gross mass
wt.%。
5. preparation method described in any one of -4 according to claim 1, which is characterized in that the binder is selected from polyethylene
Alcohol, at least one of hydroxymethyl cellulose and starch, additional amount are in silicon carbide in submicro level powder or nanometer silicon carbide powder
A kind of and micron order carborundum powder gross mass 1~15wt.%.
6. preparation method according to any one of claims 1-5, which is characterized in that the plasticiser is selected from o- benzoic acid
At least one of diethylester, fatty alcohol binary acid rouge and polyethylene glycol, additional amount are 1wt.%~15 of mixed powder gross mass
wt.%；The lubricant is selected from least one of stearic phthalein amine, polyethylene wax and emulsified wax, and additional amount is that mixed powder is total
0.5 wt.% of quality~5wt.%；The additional amount of the water is the wt.% of 5wt.%~25 of mixed powder gross mass.
7. preparation method according to claim 1 to 6, which is characterized in that the atmosphere of the sintering is indifferent gas
Atmosphere, preferably argon gas；The time of the sintering is 0.5~3 hour.
8. a kind of silicon carbide film supporter of the preparation of preparation method described in any one of -7 according to claim 1, feature exist
In the porosity of the silicon carbide film supporter is 25%~45%, and aperture is 0.1 μm~20 μm.
9. silicon carbide film supporter according to claim 8, which is characterized in that the room temperature of the silicon carbide film supporter
Three-point bending resistance intensity under (20 DEG C) is not less than 60MPa, and the three-point bending resistance intensity at 1000 DEG C is not less than 50MPa.
10. silicon carbide film supporter according to claim 8 or claim 9, which is characterized in that the silicon carbide film supporter exists
10wt%, 100 DEG C of H2SO4Corrode 12 hours weightlessness in aqueous solution and be no more than 1wt.%, in 1wt%, 100 DEG C of NaOH aqueous solution
Corrode 12 hours weightlessness and is no more than 1wt.%.
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