CN109672086A - Substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip - Google Patents
Substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip Download PDFInfo
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- CN109672086A CN109672086A CN201910088182.5A CN201910088182A CN109672086A CN 109672086 A CN109672086 A CN 109672086A CN 201910088182 A CN201910088182 A CN 201910088182A CN 109672086 A CN109672086 A CN 109672086A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
A kind of substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip, including vertical-cavity surface emitting laser structure and substrate impurity element structure；The vertical-cavity surface emitting laser structure is by successively compact arranged p side electrode, p-type distribution Bragg reflector, active area, N-type distribution Bragg reflector and the face N electrode are constituted from top to bottom；The substrate impurity element structure is made of substrate and large granular impurity element；The present invention generates chaotic laser light using random light feedback, completely eliminate the delay characteristics of light feedback semiconductor laser, and it is based on vertical-cavity surface-emitting chaos laser, threshold current is low, small power consumption, and output light is along the direction perpendicular to substrate slice, it is integrated to be easy to extensive two-dimensional array, simple process and low cost can be widely applied to the fields such as secret communication, laser radar, physical random number generation.
Description
Technical field
The present invention relates to a kind of chaos laser field, especially a kind of transmitting that feedback vertical cavity surface is adulterated for substrate
Chaotic laser light chip.
Background technique
Chaotic laser light is widely used in randomizer, secret communication, thunder due to characteristics such as high bandwidth, noise likes
Up to equal fields.
It feeds back disturbance semiconductor laser using light to be convenient to obtain chaotic laser light, however, conventional light feedback system produces
Raw chaos optical signal can carry the related delay characteristics with feedback cavity length, be in the time domain weak periodicity, in autocorrelator trace
On there is secondary lobe (Journal of Quantum Electronics, Vol. 45, p. 879-891,2009).
The presence of delay characteristics seriously affects chaotic laser light application performance, such as it can reduce the generation of chaos physical random number
The randomness of device destroys the safety of chaotic optical communication system, increases chaotic radar and optical time domain reflectometer erroneous judgement etc..
In order to weaken or eliminate delay characteristics problem, related scholar proposes numerous methods to optimize light FeedBack Semiconductor and swash
Light device, typically, French scholar D.Rontani prove when external cavity feedback intensity is extremely weak, light feedback semiconductor laser when
Delay characteristics can be inhibited (Optics Letters, Vol. 32, p. 2960-2962,2007)；Wu Jiagui et al. discovery uses
Duplex feedback exocoel, under proper condition, the delay character of light feedback semiconductor laser can be hidden well (Optics
Express, Vol. 17, p. 20124-20133,2009).
It should be noted, however, that the prior art can improve to a certain extent light feedback semiconductor laser when
Delay characteristics, but their total systems are complicated and condition is harsh, and in addition to this, light feedback semiconductor laser is based on mostly at present
What Distributed Feedback Laser was realized, Distributed Feedback Laser threshold current is larger, and power consumption is relatively high, and the side that output light is parallel along substrate slice
To, can integrated level it is low, in contrast, vertical cavity surface emitting laser have incomparable advantage: firstly, its active area body
Product is small, can obtain very low threshold current, small power consumption, and the service life is long；Secondly, its relaxation oscillation frequency with higher, dynamic is adjusted
Range processed is big；In addition, its output facula is circle, the angle of divergence is small, high with the coupling efficiency of optical fiber；Finally, light output is along vertical
Directly in the direction of substrate slice, it is integrated to be easily formed two-dimensional array.
Summary of the invention
The object of the present invention is to provide a kind of substrates to adulterate feedback vertical-cavity surface-emitting chaotic laser light chip, mainly solves
Technical problem is the impurity element in substrate material, and random back scattering is provided for chaotic laser light chip, is swashed to outgoing
Light causes random disturbance, and the exocoel long message for causing light feedback procedure not fixed is eliminated chaotic laser light chip with this and produced
Raw delay characteristics improve the randomness of the confidentiality of chaotic communication, the accuracy of chaotic radar and random number.
To solve the above-mentioned problems and above-mentioned purpose is realized, the technical solution adopted by the present invention is that a kind of doping of substrate is anti-
Vertical-cavity surface-emitting chaotic laser light chip is presented, which mainly includes vertical-cavity surface emitting laser structure and substrate impurity
Two parts of element structure.
The vertical-cavity surface emitting laser structure is by successively compact arranged p side electrode, p-type are distributed cloth from top to bottom
Glug reflecting mirror, active area, N-type distribution Bragg reflector, the face N electrode are constituted, wherein p-type distribution Bragg reflector, N
The active area of type distribution Bragg reflector and folder between them constitutes active resonant cavity, gain needed for providing laser lasing
Substance realizes population inversion, shoot laser.
The substrate impurity element structure is made of substrate and large granular impurity element, this structure can be to emergent light
It realizes random back scattering process, causes random perturbation, be finally produced without the chaotic laser light of delay characteristics.
Based on the above-mentioned technical proposal, attached to be technically characterized in that
The reflectance spectrum central wavelength of the p-type distribution Bragg reflector and N-type distribution Bragg reflector be 980nm or
1550nm。
The center spectrum of the active area is 980nm or 1550nm.
The substrate material is low refractive index dielectric material, and substrate thickness is in hundred μm of magnitudes.
The impurity element is bulky grain element, can be the elements such as silicon, chromium, iron, boron.
A kind of substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip provided by the present invention is above-mentioned, with the prior art
It compares, advantage is as follows with good effect.
The nuclear structure that the present invention uses substrate impurity element structure to generate as chaos light is fed back using random light
Chaos light is generated, its randomness is enhanced, eliminates the delay characteristics of chaos laser.
The present invention directly by substrate material impurity member usually provide light feed back needed for feedback cavity and feedback object
Matter, and integrated with vertical cavity surface emitting laser, compact-sized, stability is good, and integrated level is high；
The present invention is based on vertical cavity surface emitting lasers, and threshold current is low, and small power consumption, output light is along perpendicular to substrate slice
Direction is easy to extensive two-dimensional array and integrates, and simple process and low cost is widely used in maintaining secrecy, it can be achieved that industrialized production
The fields such as communication, laser radar, physical random number generation.
Detailed description of the invention
To further illustrate particular technique feature of the invention, below in conjunction with specific embodiment and referring to attached drawing, to this hair
It is bright to be described in further details, in which:
Fig. 1 is the schematic diagram of substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip of the present invention.
Fig. 2 is the auto-correlation of chaotic laser light produced by substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip of the present invention
Figure.
In figure: the electrode of the face 1:P；2:P type distribution Bragg reflector；3: active area；4:N type distribution Bragg reflector；
5: substrate；6: impurity element；The face 7:N electrode.
Specific embodiment
A kind of substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip of the present invention, is swashed in existing vertical-cavity surface-emitting
On the basis of light device manufacturing process, by directly adulterating suitable this structure of impurity element to substrate, shoot laser is realized
Random back scattering process, causes random perturbation, final to generate the chaotic laser light for thoroughly eliminating delay characteristics.
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.
It as shown in Fig. 1, is a kind of specific knot of substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip of the present invention
Structure schematic diagram, it can be seen from the figure that package unit is mainly by successively compact arranged p side electrode 1, p-type are distributed from top to bottom
Bragg mirror 2, active area 3, N-type distribution Bragg reflector 4, substrate 5, impurity element 6 and the face N electrode 7 are constituted.
Its specific embodiment are as follows: p-type distribution Bragg reflector 2, active area 3, N-type distribution Bragg reflector 4 are tight
Solid matter column, form active resonant cavity, provide required gain substance for laser lasing, realize population inversion, shoot laser；P-type
Distribution Bragg reflector 2, N-type distribution Bragg reflector 4 are by successively compact arranged one layer or several layers of materials from top to bottom
Bed of material composition；Active area 3 is made of several Quantum Well, and center spectrum is 980nm or 1550nm；Substrate 5 is fixed on N-type distribution cloth
The lower surface of glug reflecting mirror 4, as the exocoel of light feedback, material is low refractive index dielectric material, with a thickness of hundred μm of magnitudes,
That is a length of hundred μm of feedback cavity；Suitable large granular impurity element 6 is adulterated in substrate 5, realizes random back scattering process.
In present embodiment, p-type distribution Bragg reflector 2 and N-type distribution Bragg reflector 4 are respectively by 30 pairs and 10
Alternately arranged high refractive index material layer and low refractive index material layer are formed, reflectance spectrum central wavelength is 980nm, reflectivity
Respectively 99.9% and 88%.
According to the growing technology of existing vertical cavity surface emitting laser, generally contacting with active area 3 is low-refraction
Material layer, contacting with p side electrode 1 and substrate 5 is high refractive index material layer, and the material of material layer is AlGaAs.
In present embodiment, active area 3 is made of three InAs/GaAsP Quantum Well, and center spectrum is 980nm.
In present embodiment, the material of p side electrode 1 and the face N electrode 7 is Ti/Au alloy material；The material of substrate 5 is
GaAs material, refractive index 3.3, with a thickness of 400 μm.
In present embodiment, the impurity element 6 of bulky grain is element silicon.
In present embodiment, active resonant cavity provides gain substance first, realizes population inversion, launches laser；So
Afterwards, emergent light realizes random back scattering process by substrate impurity element, disturbs to the light feedback of laser additional random
It is dynamic, chaotic laser light is finally generated, because the exocoel long message that feedback procedure is not fixed, is eliminated produced by chaotic laser light with this
Delay characteristics.
Whether the chaotic laser light in order to clearly judge that the present apparatus generates contains Delay, and we illustrate this realities
The autocorrelogram of chaotic laser light caused by example is applied, as shown in Fig. 2.It can be seen that produced chaos from autocorrelogram Fig. 2 to swash
Light does not have apparent secondary lobe, and can't see apparent spike near main peak, shows chaotic laser light caused by the present apparatus
Delay has obtained thoroughly eliminating.
It should be understood that the above is only a specific embodiment of the present invention, be not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in protection of the invention
Within the scope of.
Claims (5)
1. a kind of substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip, including vertical-cavity surface emitting laser structure and lining
Bottom impurity element structure；It is characterized by:
The vertical-cavity surface emitting laser structure is by successively compact arranged p side electrode, p-type distribution bragg from top to bottom
Reflecting mirror, active area, N-type distribution Bragg reflector, the face N electrode are constituted, wherein p-type distribution Bragg reflector, N-type point
The active area of cloth Bragg mirror and folder between them constitutes active resonant cavity, gain object needed for providing laser lasing
Matter realizes population inversion, shoot laser；
The substrate impurity element structure is made of substrate and large granular impurity element, this structure realizes emergent light
Random back scattering process, causes random perturbation, is finally produced without the chaotic laser light of delay characteristics.
2. substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip as described in claim 1, it is characterised in that: the P
The reflectance spectrum central wavelength of type distribution Bragg reflector and N-type distribution Bragg reflector is 980nm or 1550nm.
3. substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip as described in claim 1, it is characterised in that: described to have
The center spectrum of source region is 980nm or 1550nm.
4. substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip as described in claim 1, it is characterised in that: the lining
The material at bottom is low refractive index dielectric material, and substrate thickness is in hundred μm of magnitudes.
5. substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip as described in claim 1, it is characterised in that: described miscellaneous
Prime element is one of silicon, chromium, iron and boron particle elements.
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| CN201910088182.5A CN109672086A (en) | 2019-01-29 | 2019-01-29 | Substrate doping feedback vertical-cavity surface-emitting chaotic laser light chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690648A (en) * | 2019-07-09 | 2020-01-14 | 上海砷芯科技有限公司 | Laser device |
| CN115117735A (en) * | 2021-03-17 | 2022-09-27 | 上海禾赛科技有限公司 | Laser, light source module and laser radar |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107690737A (en) * | 2015-06-09 | 2018-02-13 | 皇家飞利浦有限公司 | Vertical cavity surface emitting laser |
| CN107749564A (en) * | 2017-11-16 | 2018-03-02 | 太原理工大学 | Height scattering doped optical waveguide feedback produces the Monolithic Integrated Laser chip of chaos light |
| US20180278023A1 (en) * | 2017-03-23 | 2018-09-27 | Samsung Electronics Co., Ltd. | Vertical cavity surface emitting laser including meta structure reflector and optical device including the vertical cavity surface emitting laser |
-
2019
- 2019-01-29 CN CN201910088182.5A patent/CN109672086A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107690737A (en) * | 2015-06-09 | 2018-02-13 | 皇家飞利浦有限公司 | Vertical cavity surface emitting laser |
| US20180278023A1 (en) * | 2017-03-23 | 2018-09-27 | Samsung Electronics Co., Ltd. | Vertical cavity surface emitting laser including meta structure reflector and optical device including the vertical cavity surface emitting laser |
| CN107749564A (en) * | 2017-11-16 | 2018-03-02 | 太原理工大学 | Height scattering doped optical waveguide feedback produces the Monolithic Integrated Laser chip of chaos light |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110690648A (en) * | 2019-07-09 | 2020-01-14 | 上海砷芯科技有限公司 | Laser device |
| CN110690648B (en) * | 2019-07-09 | 2022-05-13 | 上海伍兆电子科技有限公司 | Laser device |
| CN115117735A (en) * | 2021-03-17 | 2022-09-27 | 上海禾赛科技有限公司 | Laser, light source module and laser radar |
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Application publication date: 20190423 |