CN109643877A - Laser aid - Google Patents

Laser aid Download PDF

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Publication number
CN109643877A
CN109643877A CN201680088582.0A CN201680088582A CN109643877A CN 109643877 A CN109643877 A CN 109643877A CN 201680088582 A CN201680088582 A CN 201680088582A CN 109643877 A CN109643877 A CN 109643877A
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CN
China
Prior art keywords
gas
laser
chamber
control
control unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201680088582.0A
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Chinese (zh)
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CN109643877B (en
Inventor
浅山武志
增田浩幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aurora Advanced Laser Corp
Gigaphoton Inc
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Aurora Advanced Laser Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Aurora Advanced Laser Corp filed Critical Aurora Advanced Laser Corp
Priority to CN202011244036.6A priority Critical patent/CN112366500B/en
Priority to CN202011244027.7A priority patent/CN112366499B/en
Publication of CN109643877A publication Critical patent/CN109643877A/en
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Publication of CN109643877B publication Critical patent/CN109643877B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/09702—Details of the driver electronics and electric discharge circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/104—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/038—Electrodes, e.g. special shape, configuration or composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10038—Amplitude control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10069—Memorized or pre-programmed characteristics, e.g. look-up table [LUT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Lasers (AREA)

Abstract

Laser aid includes chamber, is configured with a pair of discharge electrodes in inside；Gas supplies tapping equipment, supplies laser gas, the laser gas of the inside of discharge chamber to the inside of chamber；And control unit, consist of the 1st control of progress and the 2nd control, in the 1st control, gas supply tapping equipment is controlled, to penetrate number or according to the 1st by the time according to the 1st, stop laser generation to replace the indoor laser gas of chamber, in the 2nd control, gas supply tapping equipment is controlled, before the 1st control, according to penetrated than the 1st several few 2 penetrate number or according to than the 1st by the time it is short the 2nd by the time, stop laser generation to replace the indoor laser gas of chamber.

Description

Laser aid
Technical field
This disclosure relates to laser aid.
Background technique
With the miniaturization of semiconductor integrated circuit, highly integrated, mentioning for resolution ratio is required in semiconductor exposure device It is high.In the following, semiconductor exposure device is referred to as " exposure device ".Therefore, the light exported from exposure light source is being promoted Short wavelengthization.In exposure light source, the using gas laser aid instead of existing mercury vapor lamp.Currently, as exposure Gas laser apparatus, the KrF excimer laser apparatus and output wavelength for the ultraviolet light for the use of output wavelength being 248nm are The ArF excimer laser apparatus of the ultraviolet light of 193nm.
As current exposure technique, following immersion exposure is practical: filling up exposure device side using liquid Gap between projecting lens and chip, changes the refractive index in the gap, and the appearance wavelength of exposure light source is thus made to shorten.? In the case where using ArF excimer laser apparatus to carry out immersion exposure as exposure light source, to the wavelength in wafer illumination water For the ultraviolet light of 134nm.The technology is known as ArF immersion exposure.ArF immersion exposure is also referred to as ArF liquid etch quarter.
Spectral line width in the natural oscillation of KrF, ArF excimer laser apparatus is wider, about 350~400pm, because This, generates color difference, resolution ratio by the laser (ultraviolet) that the projecting lens of exposure device side projects on chip with reducing It reduces.Therefore, it is necessary to the spectral line widths to the laser exported from gas laser apparatus to carry out narrowband, until it becomes that can neglect Slightly until the degree of color difference.Spectral line width is also referred to as spectral width.Therefore, in the laser resonator of gas laser apparatus Narrowband optical system (Line Narrow Module) with narrowband element is set, it is real by the narrowband optical system The narrowband of existing spectral width.In addition, narrowband element can be etalon or grating etc..Spectral width will be carried out so narrow Laser aid obtained from bandization is known as narrowband laser aid.
Existing technical literature
Patent document
Patent document 1: No. 2006/0239322 specification of U.S. Patent Application Publication
Patent document 2: Japanese Unexamined Patent Publication 2002-208746 bulletin
Patent document 3: No. 2008/0115342 specification of U.S. Patent Application Publication
Summary of the invention
The laser aid of 1 viewpoint of the disclosure includes chamber, is configured with a pair of discharge electrodes in inside；Gas supplies To tapping equipment, laser gas, and the laser gas of the inside of discharge chamber are supplied to the inside of chamber；And control unit, Consist of progress the 1st control and the 2nd control, the 1st control in, to gas supply tapping equipment control, with according to 1st penetrates number or according to the 1st by the time, stops laser generation to replace the indoor laser gas of chamber, right in the 2nd control Gas supply tapping equipment is controlled, to penetrate number or according to than the 1st according to penetrating several few 2 than the 1st before the 1st control By the time it is short the 2nd pass through the time, stop laser generation and replace the indoor laser gas of chamber.
The laser aid of another viewpoint of the disclosure includes chamber, is configured with a pair of discharge electrodes in inside；Gas Tapping equipment is supplied, supplies laser gas, and the laser gas of the inside of discharge chamber to the inside of chamber；Pressure sensing Device is used to measure the air pressure of the inside of chamber；And control unit, the 1st control of progress and the 2nd control are consisted of, the 1st In control, gas supply tapping equipment is controlled, to penetrate number or according to the 1st by the time according to the 1st, stops laser generation It replaces the indoor laser gas of chamber, in the 2nd control, gas supply tapping equipment is controlled, in the 1st control Before, in the case where the air pressure of the inside of chamber reaches the 1st regulation air pressure, stop laser generation to replace the indoor laser gas of chamber Body.
The laser aid of another viewpoint of the disclosure includes chamber, is configured with a pair of discharge electrodes in inside；Gas Tapping equipment is supplied, supplies laser gas, and the laser gas of the inside of discharge chamber to the inside of chamber；And control Portion consists of the 1st control of progress and the 2nd control, in the 1st control, controls gas supply tapping equipment, with one Side carries out laser generation, supplies the laser gas of the 1st amount into chamber on one side or discharges the laser gas of the 1st amount out of chamber, In the 2nd control, gas supply tapping equipment is controlled, to carry out laser generation on one side before the 1st control, one While supplying the laser gas of 2nd amount more than the 1st amount into chamber or discharging the laser gas of the 2nd amount out of chamber.
Detailed description of the invention
In the following, several embodiments of the disclosure are illustrated as simple case referring to attached drawing.
Fig. 1 roughly shows the structure of the laser aid of comparative example.
Fig. 2 is the flow chart for showing the energy hole of the progress of card for laser control unit 30 of the laser aid of comparative example.
Fig. 3 is the processing for the laser gas control that the gas control unit 32 for the excimer laser apparatus for showing comparative example carries out Flow chart.
Fig. 4 is the flow chart for showing the details of processing of all gas replacement shown in Fig. 3.
Fig. 5 is the flow chart for showing the details of processing of pressure control shown in Fig. 3.
Fig. 6 is the flow chart for showing the details of processing of halogen gas injection control shown in Fig. 3.
Fig. 7 is the flow chart for showing the details of processing of portion gas replacement control shown in Fig. 3.
Fig. 8 is the flow chart for showing the details of the processing shown in Fig. 3 for determining whether to carry out all gas replacement.
Fig. 9 is the curve graph for showing the variation of the indoor air pressure of chamber in comparative example.
Figure 10 is to determine whether to carry out all gas replacement in the laser aid for the 1st embodiment for showing the disclosure The flow chart of the details of processing.
Figure 11 is the curve graph for showing the variation of the indoor air pressure of chamber in the 1st embodiment.
Figure 12 is to determine whether to carry out all gas replacement in the laser aid for the 2nd embodiment for showing the disclosure The flow chart of the details of processing.
Figure 13 is the curve graph for showing the variation of the indoor air pressure of chamber in the 2nd embodiment.
Figure 14 is the laser gas control for showing the gas control unit 32 of the laser aid of the 3rd embodiment of the disclosure and carrying out The flow chart of the processing of system.
Figure 15 is the flow chart for showing the details of processing for the selection that discharge amount is injected shown in Figure 14.
Figure 16 is the curve graph for showing the variation of the indoor air pressure of chamber in the 3rd embodiment.
Figure 17 roughly shows the structure of the laser aid of the 4th embodiment of the disclosure.
Figure 18 is the block diagram for showing the outline structure of control unit.
Specific embodiment
<content>
1. summary
2. the explanation of term
3. the laser aid of comparative example
3.1 structure
3.1.1 laser oscillation system
3.1.2 gas supplies tapping equipment
3.2 movement
3.2.1 the movement of laser oscillation system
3.2.2 energy hole
3.2.3 laser gas controls
3.2.3.1 all gas is replaced
3.2.3.2 the pressure control for supplying or discharging comprising gas
3.2.3.3 halogen gas injection control
3.2.3.4 portion gas replacement control
3.2.3.5 determine whether to carry out all gas replacement
3.3 project
4. after chamber is just replaced, the laser aid of the frequency of raising all gas replacement
5. after chamber is just replaced, air pressure reach the laser aid that all gas replacement is carried out after regulation air pressure
6. increasing the laser of injection discharge amount after chamber is just replaced, in portion gas replacement or halogen gas injection Device
7.MOPO system
8. the structure of control unit
In the following, embodiment of the present disclosure is described in detail referring to attached drawing.Embodiments described below shows this Several disclosed examples, do not limit content of this disclosure.Also, the structure illustrated in each embodiment and movement are not necessarily It all must be as the structure and movement of the disclosure.In addition, marking identical reference numeral to identical structural element and omitting repetition Explanation.
1. summary
Embodiment of the present disclosure is related to the gas laser apparatus of discharge excitation formula.In turn, embodiment of the present disclosure relates to And excimer laser apparatus.In excimer laser apparatus, the laser comprising rare gas and halogen gas is enclosed in the chamber Gas.In excimer laser apparatus, apply the high voltage of pulse type to a pair of discharge electrodes of configuration in the chamber.In a pair After generating electric discharge between discharge electrode, laser gas is motivated.The light generated by the laser gas that is motivated optical resonator it Between it is reciprocal, be thus amplified, generate laser.
After generating laser in excimer laser apparatus, impurity is generated in laser gas, which accumulates in the chamber. Impurity Absorption laser in laser gas, or make the state deteriorating of electric discharge.In order to inhibit the output of laser to reduce, carry out making chamber The movement that indoor air pressure rises.Also, in order to remove the impurity in laser gas, number is penetrated or by the time preset When arrival, also gas is replaced.
In general, before the indoor air pressure of chamber rises and reaches upper limit value, it is preset to penetrate number or arrive by the time, Gas is replaced.But after chamber is just replaced, include in the surface portion and laser gas of the component of chamber interior Halogen gas reaction, generated sometimes than usual more impurity.In the case where generating more impurity, number or process are penetrated above-mentioned Before time arrives, the possible indoor air pressure of chamber rises and reaches upper limit value.
Embodiment of the present disclosure includes that the laser gas that air pressure reaches upper limit value after chamber is just replaced is inhibited to control Motion.Also, embodiment of the present disclosure includes to execute the motion of the laser aid of this laser gas control.
2. the explanation of term
In the present specification, " passivation " refers to following process: reacting the surface of the component of chamber interior with halogen gas And become the state chemically balanced, it is passivated.After carrying out the process, epithelium is formed on the surface of the component of chamber interior, Inhibit the generation of impurity.
3. the laser aid of comparative example
3.1 structure
Fig. 1 roughly shows the structure of the laser aid of comparative example.
Laser aid is used together with exposure device 100.From the laser light incident that laser aid exports to exposure device 100. Exposure device 100 includes exposure device control unit 110.Exposure device control unit 110 is configured to control exposure device 100 System.Exposure device control unit 110 is configured to send setting for target impulse energy to the card for laser control unit 30 for including in laser aid Fixed number evidence, or send light emission trigger signal.
Laser aid shown in FIG. 1 includes laser oscillation system, card for laser control unit 30, gas supply tapping equipment 40.Swash Light generation system includes chamber 10, charger 12, pulse power module 13, narrowband module 14, output coupling mirror 15, pressure biography Sensor 16, Energy monitor 17, cross flow fan 21, motor 22.
Card for laser control unit 30 is all together the control of laser aid entirety.Card for laser control unit 30 connects from Energy monitor 17 Receive determination data.
2.1.1 laser oscillation system
The configuration of above-mentioned chamber 10 for including in laser oscillation system is constituted by narrowband module 14 and output coupling mirror 15 Laser resonator optical path on.2 windows 10a and 10b are provided in chamber 10.A pair of discharge electrodes is accommodated in chamber 10 11a and 11b.Chamber 10 accommodates laser gas.
Opening is formed in chamber 10, electric insulation part 29 blocks the opening.Discharge electrode 11a is supported on electric insulation part 29 On, discharge electrode 11b is supported on the inside demarcation plate 10c of chamber 10.Conductive part 29a is embedded in electric insulation part 29.It leads The high voltage of the pulse type supplied from pulse power module 13 is applied to discharge electrode 11a by electric portion 29a.
Internal demarcation plate 10c is not the complete inside for separating chamber 10.The depth of paper of the internal demarcation plate 10c in Fig. 1 Side and nearby side have the gap (not shown) for passing through for laser gas.
Cross flow fan 21 is configured in the inside of chamber 10.The rotary shaft of cross flow fan 21 and configuration are in the outside of chamber 10 Motor 22 connects.Motor 22 rotates cross flow fan 21 according to the control signal of card for laser control unit 30.Motor 22 makes cross flow fan 21 rotations, laser gas is recycled in the inside of chamber 10 as a result,.
Charger 12 keeps the electric energy for supplying to pulse power module 13.Pulse power module 13 includes switch 13a. Pulse power module 13 is configured to the voltage for applying pulse type between a pair of discharge electrodes 11a and 11b.
Narrowband module 14 includes prism 14a and grating 14b equiwavelength's selection element.Also it can replace narrowband module 14 And use high reflection mirror.
Output coupling mirror 15 is made of partially reflecting mirror.
Pressure sensor 16 is configured to measure the pressure of the laser gas in chamber 10.Pressure sensor 16 is configured to gas The gas control unit 32 for including in body supply tapping equipment 40 sends the determination data of pressure.
Energy monitor 17 includes beam splitter 17a, convergent lens 17b, optical sensor 17c.Beam splitter 17a configuration is from defeated In the optical path for the laser that coupling mirror 15 exports out.Beam splitter 17a is configured to one of the laser for making to export from output coupling mirror 15 Divide and transmitted towards exposure device 100 with high transmittance, and reflects another part.Convergent lens 17b and light Sensor 17c is configured in the optical path of the laser reflected by beam splitter 17a.Convergent lens 17b is configured to make anti-by beam splitter 17a The laser penetrated is focused on optical sensor 17c.Optical sensor 17c is configured to send to card for laser control unit 30 and by convergent lens The corresponding electric signal of pulse energy for the laser that 17b is assembled is as determination data.
3.1.2 gas supplies tapping equipment
The above-mentioned gas supply tapping equipment 40 for including in laser aid may include gas control unit 32.Gas control unit 32 are configured to transmit and receive signal between card for laser control unit 30.Gas control unit 32 is configured to receive from pressure sensor 16 The determination data of output.
It includes piping 37, piping 38, valve B-V, valve F2-V1, valve F2-V2, mass flow control that gas, which supplies tapping equipment 40, Device MFC processed.
Piping 38 is connect with halogen-containing gas supply source F2.The connecting pipings 38 in the piping 39 being connect with chamber 10, by This, halogen-containing gas supply source F2 can supply halogen-containing gas to chamber 10.Halogen-containing gas supply source F2 is to have accommodated packet The gas cylinder of fluorine-containing laser gas.Halogen-containing gas is to carry out mixed laser gas to fluorine gas, Krypton and neon.As containing Another example of halogen gas can be and carry out mixed gas to fluorine gas or chlorine, argon gas or xenon, neon or helium.
Valve F2-V1 setting is in piping 38.Piping 38 is divided into two strands halfway, and a side is configured with valve F2-V2 wherein, Another party is configured with mass flow controller MFC.Pass through the combination of valve F2-V1 and valve F2-V2 or valve F2-V1 and mass flow control Halogen-containing gas is controlled in the combination of device MFC processed from halogen-containing gas supply source F2 via piping 39 to the supply of chamber 10 System.Valve F2-V1, valve F2-V2 and mass flow controller MFC are controlled by gas control unit 32.
Piping 37 is connected between buffer gas supply source B and piping 39.Piping 37 is connect with piping 39, is buffered as a result, Gas supply source B can supply buffer gas to chamber 10.Buffer gas is the laser gas comprising Krypton and neon.It is buffering It hardly include halogen gas in gas.Alternatively, may include concentration ratio in buffer gas from halogen-containing gas supply source F2 The low halogen gas of the halogen-containing gas of supply.Another example as buffer gas can be as rare gas comprising argon gas Or the laser gas of xenon and neon or helium.
Valve B-V setting is in piping 37.By the opening and closing of valve B-V, to buffer gas from buffer gas supply source B via matching Pipe 39 is controlled to the supply of chamber 10.The opening and closing of valve B-V is controlled by gas control unit 32.
It includes 36, valve EX-V1, valve EX-V2, halogen gas trap 45, exhaust pump 46 of piping that gas, which supplies tapping equipment 40,.
Piping 36 is connected between discharging processing device (not shown) outside chamber 10 and device etc..Piping 36 and piping 39 connections, can be discharged to outside device from the laser gas that chamber 10 discharges as a result,.
The setting of halogen gas trap 45 is in piping 36.Halogen gas trap 45 is configured to capture the laser gas discharged from chamber 10 The halogen gas for including in body.As the inorganic agent of capture halogen gas, such as it is able to use activated carbon.
Piping 36 is divided into two strands halfway, and a side is configured with valve EX-V1 and exhaust pump 46 wherein, is configured in another party Valve EX-V2.Combination or valve EX-V2 by valve EX-V1 and exhaust pump 46, to gas from chamber 10 via halogen gas trap 45 Discharge is controlled.
Valve EX-V1 and exhaust pump 46 are controlled by gas control unit 32.The shape that exhaust pump 46 is opened in valve EX-V1 It, can be by the laser gas forced discharge in chamber 10 to atmospheric pressure pressure below under state.
Valve EX-V2 is controlled by gas control unit 32.By opening valve EX-V2, the interior of chamber 10 can be utilized The a part in portion and the laser gas in the pressure difference discharge chamber 10 of atmospheric pressure.
3.2 movement
3.2.1 the movement of laser oscillation system
Card for laser control unit 30 receives the setting data of target impulse energy from exposure device control unit 110 and acropoma transmits Number.Card for laser control unit 30 is according to the setting data of the target impulse energy received from exposure device control unit 110, to charger 12 send the setting data of charging voltage.Also, card for laser control unit 30 shines according to what is received from exposure device control unit 110 Trigger signal, the switch 13a for including into pulse power module (PPM) 13 send trigger signal.
The switch 13a of pulse power module 13 is turned on after the reception trigger signal of card for laser control unit 30.Pulse Power module 13 is after switch 13a is turned on, according to the high voltage for being electrically charged the electric energy that device 12 is filled with and generating pulse type, The high voltage is applied to a pair of discharge electrodes 11a and 11b.
After to the high voltage for applying pulse type between a pair of discharge electrodes 11a and 11b, in a pair of discharge electrodes 11a and Cause to discharge between 11b.By the energy of the electric discharge, the laser gas in chamber 10 is motivated, Xiang Gaoneng order transition.Then, The laser gas motivated releases the light of wavelength corresponding with the energy level difference to when low energy order transition.
The light generated in chamber 10 is projected via window 10a and 10b to the external of chamber 10.From the window 10a of chamber 10 The light of injection amplifies beam angle by prism 14a, is incident on grating 14b.The light of grating 14b is incident on by grating from prism 14a Multiple slots of 14b reflect, and carry out diffraction on direction corresponding with the wavelength of light.Grating 14b by carry out littrow arrangement, So that the incidence angle for being incident on the light of grating 14b from prism 14a is consistent with the angle of diffraction of the diffraction light of desired wavelength.Phase as a result, The light hoped near wavelength returns to chamber 10 via prism 14a.
Output coupling mirror 15 makes a part transmission from the light that the window 10b of chamber 10 is projected and exports, and makes another portion Divide reflection and returns to chamber 10.
In this way, the light projected from chamber 10 is reciprocal between narrowband module 14 and output coupling mirror 15.Whenever across one When to discharge space between discharge electrode 11a and 11b, which is amplified.Also, whenever when narrowband module 14 is turned back, The light is by narrowband.Laser generation is carried out in this way and is exported as laser from output coupling mirror 15 by the light of narrowband.
Energy monitor 17 detects the pulse energy of the laser exported from output coupling mirror 15.Energy monitor 17 is to laser Control unit 30 sends the data of detected pulse energy.
Card for laser control unit 30 is according to the determination data of the pulse energy received from Energy monitor 17 and from exposure device The setting data for the target impulse energy that control unit 110 receives carry out feedback control to the charging voltage set in charger 12 System.
3.2.2 energy hole
Fig. 2 is the flow chart for showing the energy hole of the progress of card for laser control unit 30 of the laser aid of comparative example.Laser control Portion 30 processed controls the charging voltage of charger 12 by following processing, so that the pulse energy of the laser exported is close Target impulse energy.
Firstly, card for laser control unit 30 reads in the value (S10) of the target impulse energy Et of laser.The value of target impulse energy Et The value e.g. requested by exposure device control unit 110.
Then, card for laser control unit 30 determines whether to have carried out laser generation (S11).According to card for laser control unit 30 whether to filling Electric appliance 12 and pulse power module 13 have sent the various signals of laser generation, determine whether to have carried out laser generation.Alternatively, The data that pulse energy E whether is received from Energy monitor 17 according to card for laser control unit 30, determine whether to have carried out laser vibration It swings.
Then, card for laser control unit 30 reads in the value (S12) of the pulse energy E of laser.As the value of pulse energy E, read in The value received from Energy monitor 17.
Then, card for laser control unit 30 is compared the value of the pulse energy E of laser and the value of target impulse energy Et (S13)。
In the case where the value of pulse energy E is equal with the value of target impulse energy Et (E=Et), card for laser control unit 30 makes The charging voltage V of charger 12 maintains current charging voltage V (S14:V=V).
In the case where the value of pulse energy E is less than the value of target impulse energy Et (E < Et), card for laser control unit 30 makes to fill The charging voltage V of electric appliance 12 rises to current charging voltage V plus value (S15:V obtained from defined increase and decrease amplitude, ao V =V+ Δ V).Thereby, it is possible to rise pulse energy E close to target impulse energy Et.
In the case where the value of pulse energy E is greater than the value of target impulse energy Et (E > Et), card for laser control unit 30 makes to fill The charging voltage V of electric appliance 12 is reduced to value obtained from the increase and decrease amplitude, ao V as defined in subtract in current charging voltage V (S16:V=V- Δ V).Thereby, it is possible to reduce pulse energy E close to target impulse energy Et.
Electric discharge is repeated in laser gas after accumulation impurity in laser aid, pulse energy E is easily reduced.Cause This, in the case that accumulation has impurity in laser gas, as long as air pressure and other conditions are constant, passes through the processing of S15, charging Voltage V is easy to rise.
Shown in arbitrary steps in S14~S16 after the control of charging voltage V, card for laser control unit 30 will charge In the data write-in storage unit of voltage V (S17).As storage unit, such as use aftermentioned storage memory 1005.Alternatively, swashing Photocontrol portion 30 can send the data of charging voltage V to gas control unit 32.
Then, card for laser control unit 30 determines whether charging voltage V is maximum value Vmax or more (S18).It is in charging voltage V In the case where maximum value Vmax or more (V≤Vmax), the luminous efficiency of laser is poor, therefore, it is necessary to stop laser generation, carries out All gas replacement or the maintenance of chamber.Therefore, terminate the processing of this flow chart.Charging voltage V be not maximum value Vmax with In the case where upper (V < Vmax), above-mentioned S10 is returned, continues to control charging voltage V, stabilizes pulse energy E.
3.2.3 laser gas controls
Fig. 3 is the process for showing the processing of the laser gas control of the progress of gas control unit 32 of the laser aid of comparative example Figure.Gas control unit 32 carries out all gas replacement, pressure control, halogen gas injection control and part gas by following processing Body replacement control.
Firstly, target halogen partial pressure PF2t is set as initial value PF2t0 by gas control unit 32 in S1000.As first Initial value PF2t0, selection export arteries and veins from chamber 10 by the discharge excitation laser gas between a pair of discharge electrodes 11a and 11b The value of impulse light.Initial value PF2t0 is for example in the range of 0.13kPa~0.18kPa.
Then, in S1100, gas control unit 32 sends laser generation NG signal to card for laser control unit 30.Laser generation NG signal is the signal for indicating not have the gas condition of laser generation.
Then, in S1200, gas control unit 32 controls gas supply tapping equipment 40, to carry out whole gas Body replacement.Not only in the case where having carried out judgement (S2600 and the S2700) of aftermentioned all gas replacement, also in rigid setting or The processing of all gas replacement is carried out after replacement chamber.All gas replacement is carried out, so that the halogen partial pressure in chamber 10 As set initial value PF2t0.The details of all gas replacement is described below referring to Fig. 4.
Then, in S1500, laser generation OK signal is output to card for laser control unit 30 by gas control unit 32.Laser vibration Swinging OK signal is the signal for indicating to have the gas condition of laser generation.Card for laser control unit 30 is sentenced according to laser generation OK signal Break to have the gas condition in chamber 10, starts to export pulse laser.
Then, in S1600, the value of counter N is arranged to initial value 0 by gas control unit 32.Counter N is based on That surveys the pulse laser exported by laser aid penetrates several counters.
Then, in S1700, gas control unit 32 determines whether to have carried out laser generation.For example, according to whether from energy Monitor 17 receives the value of pulse energy E, determines whether to have carried out laser generation.Alternatively, can be according to whether from laser control Portion 30 processed outputs the signal of the laser generations such as trigger signal, determines whether to have carried out laser generation.Laser vibration is not being carried out In the case where swinging (S1700: no), gas control unit 32 is standby until carrying out laser generation.In the feelings for carrying out laser generation Under condition (S1700: yes), gas control unit 32 makes processing enter S1800.
In S1800, gas control unit 32 adds 1 in the value of counter N, is updated to the value of N.Also, gas Control unit 32 adds 1 in the value for penetrating several Gshot of the pulse laser after all gas replacement, is updated to the value of Gshot. Several Gshot that penetrate of pulse laser after all gas replacement are described below referring to Fig. 4 and Fig. 8.Whenever laser aid exports one When a pulse laser, the processing of a S1800 is carried out, the value of value and Gshot to N is updated.
Then, in S1900, gas control unit 32 controls gas supply tapping equipment 40, to carry out air pressure control System.The details of pressure control is described below referring to Fig. 5.
Then, in S2000, gas control unit 32 determines whether the value of counter N is specified value Ng or more.In counter In the case that the value of N is not specified value Ng or more, gas control unit 32 makes that processing returns to above-mentioned S1700.It is in the value of counter N In the case where specified value Ng or more, gas control unit 32 makes processing enter S2400.
In S2400, gas control unit 32 controls gas supply tapping equipment 40, to carry out halogen gas injection Control.The details of halogen gas injection control is described below referring to Fig. 6.
Then, in S2500, gas control unit 32 controls gas supply tapping equipment 40, to carry out part gas Body replacement control.The details of portion gas replacement control is described below referring to Fig. 7.
Here, it illustrates whenever penetrating number and reaching specified value Ng, the feelings of the then processing of the processing progress S2500 of S2400 Condition, still, the present disclosure is not limited thereto.Also it can choose the either side in S2400 and S2500.
Then, in S2600, gas control unit 32 determines whether to carry out all gas replacement.Determine whether to carry out whole The details of gas replacement is described below referring to Fig. 8.
Then, in S2700, judgement result of the gas control unit 32 referring to S2600.It is judged to carrying out in S2600 complete In the case that portion's gas is replaced (S2700: yes), gas control unit 32 makes that processing returns to above-mentioned S1100.Do not determine in S2600 In the case where carrying out all gas replacement (S2700: no), gas control unit 32 makes processing enter S2800.
Then, in S2800, gas control unit 32 determines whether to stop gas control.The case where stopping gas control Under (S2800: yes), terminate the processing of this flow chart.(S2800: no), gas control unit in the case where not stopping gas control 32 make that processing returns to above-mentioned S1600.
3.2.3.1 all gas is replaced
Fig. 4 is the flow chart for showing the details of processing of all gas replacement shown in Fig. 3.Processing shown in Fig. 4 As S1200 shown in Fig. 3 subroutine and carried out by gas control unit 32.
Firstly, gas control unit 32 for example reads in target halogen partial pressure from aftermentioned storage memory 1005 in S1201 The value of PF2t.As target halogen partial pressure PF2t, the target halogen partial pressure PF2t set in the S1100 of Fig. 3 is read in.
Then, in S1202, gas control unit 32 for example reads in target air pressure Pt's from aftermentioned storage memory 1005 Value.As target air pressure Pt, setting is by the electric discharge between a pair of discharge electrodes 11a and 11b come exciting laser gas from chamber The value of the output of room 10 pulse laser.
Then, in S1203, gas control unit 32 starts to drive exhaust pump 46, opens valve EX-V1.Start to discharge as a result, Laser gas in chamber 10.In addition, here, using 46 forced discharge of exhaust pump to atmospheric pressure pressure below, therefore, valve EX-V2 is still closed.
Then, in S1204, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16.
Then, in S1205, gas control unit 32 determines whether air pressure P becomes regulation air pressure P0 or less.Provide air pressure P0 It is set in the range of 10hpa~50hpa.In the case where air pressure P does not become regulation air pressure P0 situation below (S1205: no), gas Control unit 32 makes that processing returns to above-mentioned S1204.In the case where air pressure P becomes regulation air pressure P0 situation below (S1205: yes), gas Control unit 32 makes processing enter S1206.
In S1206, gas control unit 32 closes valve EX-V1, stops the driving of exhaust pump 46.
Then, in S1207, gas control unit 32 opens valve F2-V1 and valve F2-V2.Start to infuse into chamber 10 as a result, Enter halogen-containing gas.In addition, not driving mass flow controller MFC here.
Then, in S1208, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16.
Then, in S1209, gas control unit 32 determines whether air pressure P becomes regulation air pressure (P0+PF2t/C) or more. PF2t is above-mentioned target halogen partial pressure.C is the halogen concentration indicated with volume ratio in halogen-containing gas.It is injected in chamber 10 Halogen-containing gas until air pressure P becomes regulation air pressure (P0+PF2t/C), thus it enables that halogen partial pressure in chamber 10 at For the value for approaching target halogen partial pressure.
In the case where air pressure P does not become regulation air pressure (P0+PF2t/C) or more (S1209: no), gas control unit 32 makes Processing returns to above-mentioned S1208.In the case where air pressure P becomes regulation air pressure (P0+PF2t/C) or more (S1209: yes), gas control Portion 32 processed makes processing enter S1210.
In S1210, gas control unit 32 closes valve F2-V1 and valve F2-V2.
Then, in S1211, gas control unit 32 opens valve B-V.Start to inject buffer gas into chamber 10 as a result,.
Then, in S1212, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16.
Then, in S1213, gas control unit 32 determines whether air pressure P becomes target air pressure Pt or more.Air pressure P not In the case where as target air pressure Pt or more (S1213: no), gas control unit 32 makes that processing returns to above-mentioned S1212.In air pressure P In the case where as target air pressure Pt or more (S1213: yes), gas control unit 32 makes processing enter S1214.
In S1214, gas control unit 32 closes valve B-V.
Then, in S1215, the pulse laser after gas control unit 32 replaces all gas penetrates several Gshot and complete Being resetted by time Gtime after the replacement of portion's gas.Whenever carrying out laser generation, the value of Gshot is updated.Often When by the time, the value of Gtime is updated.The value of Gshot and the value of Gtime for it is aftermentioned it is shown in Fig. 8 whether into The judgement of row all gas replacement.
After S1215, gas control unit 32 terminates the processing of this flow chart, returns to processing shown in Fig. 3.
3.2.3.2 the pressure control for supplying or discharging comprising gas
Fig. 5 is the flow chart for showing the details of processing of pressure control shown in Fig. 3.Processing conduct shown in fig. 5 The subroutine of S1900 shown in Fig. 3 and carried out by gas control unit 32.It is referring to the processing that Fig. 4 all gas illustrated is replaced Stop laser generation come what is carried out, in contrast, pressure control described below carries out while carrying out laser generation (referring to the S1500 of Fig. 3).Gas control unit 32 is according to the charging voltage V set by energy hole shown in Fig. 2, to chamber Air pressure in 10 is controlled.
Firstly, gas control unit 32 reads in air pressure from the aftermentioned storage equal storage devices of memory 1005 in S1901 Control parameter.The control parameter of air pressure includes minimum value Vmin, the maximum value Vmax of charging voltage V and the increase and decrease amplitude of air pressure P ΔPt。
Then, in S1902, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16.
Then, in S1903, gas control unit 32 is stored in aftermentioned using current air pressure P as the initial value P0 of air pressure Storage is in the storage devices such as memory 1005.
Then, in S1904, gas control unit 32 waits the value for reading in charging voltage V from aftermentioned storage with memory 1005. The value of charging voltage V is that the processing illustrated by referring to Fig. 2 is set so that pulse energy E is close to target impulse energy Et Value.
Then, in S1905, gas control unit 32 determines whether the charging voltage V received is minimum value Vmin or more And maximum value Vmax or less.In the case where charging voltage V is minimum value Vmin or more and maximum value Vmax situation below, gas control Portion 32 terminates the processing of this flow chart, returns to processing shown in Fig. 3.
In the case that charging voltage V is higher than maximum value Vmax in S1905, in S1906, gas control unit 32 opens valve B-V.Start to supply buffer gas into chamber 10 as a result, air pressure P rises.Here, it supplies into chamber 10 and does not include substantially The buffer gas of halogen gas, therefore, the halogen partial pressure in chamber 10 have almost no change.
Then, in S1907, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16.
Then, in S1908, gas control unit 32 determines whether air pressure P becomes regulation air pressure P0+ Δ Pt or more.Regulation Air pressure P0+ Δ Pt is in the initial value P0 stored in S1903 plus value obtained from the increase and decrease amplitude, ao Pt of air pressure.In air pressure P does not become in the case where regulation air pressure P0+ Δ Pt or more (S1908: no), and gas control unit 32 makes that processing returns to above-mentioned S1907. In the case where air pressure P becomes regulation air pressure P0+ Δ Pt or more (S1908: yes), gas control unit 32 makes processing enter S1909.
In S1909, gas control unit 32 closes valve B-V.Terminate to supply buffer gas into chamber 10 as a result,.Then, Gas control unit 32 terminates the processing of this flow chart, returns to processing shown in Fig. 3.
As described above, having when laser aid is repeated electric discharge and accumulates impurity in laser gas in order to generate The laser of enough energy, by the processing of S15, charging voltage V is easy to rise.Therefore, accumulation has impurity in laser gas In the case of, increase air pressure P by the processing of S1905~S1909, inhibits the rising of charging voltage V.
In the case that charging voltage V is lower than minimum value Vmin in S1905, in S1910, gas control unit 32 opens valve EX-V2.Start the laser gas in discharge chamber 10 as a result, air pressure is reduced.In addition, here in laser generation, therefore, Laser gas atmospheric pressure degree of pressure below is not discharged into.Therefore, exhaust pump 46 is not driven, and valve EX-V1 is still closed.
Then, in S1911, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16.
Then, in S1912, gas control unit 32 determines whether air pressure P becomes regulation air pressure P0- Δ Pt or less.Regulation Air pressure P0- Δ Pt is from subtracting value obtained from the increase and decrease amplitude, ao Pt of air pressure in the initial value stored in S1903.In air pressure P Do not become in regulation air pressure P0- Δ Pt situation below (S1912: no), gas control unit 32 makes that processing returns to above-mentioned S1911. In the case where air pressure P becomes regulation air pressure P0- Δ Pt situation below (S1912: yes), gas control unit 32 makes processing enter S1913.
In S1913, gas control unit 32 closes valve EX-V2.The discharge of the laser gas in chamber 10 terminates as a result,. Then, gas control unit 32 terminates the processing of this flow chart, returns to processing shown in Fig. 3.
3.2.3.3 halogen gas injection control
Fig. 6 is the flow chart for showing the details of processing of halogen gas injection control shown in Fig. 3.It is shown in fig. 6 It handles the subroutine as S2400 shown in Fig. 3 and is carried out by gas control unit 32.The all gas replacement illustrated referring to Fig. 4 Processing laser generation is off to carry out, in contrast, halogen gas described below injection control is to be swashed on one side What light generation carried out on one side.
Firstly, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16 in S2401.
Then, in S2402, current air pressure P is stored in storage by gas control unit 32 In device.
Then, in S2403, mass flow controller MFC is set as defined flow by gas control unit 32.
Then, in S2404, gas control unit 32 is resetted and is started to timer Thg.
Then, in S2405, gas control unit 32 opens valve F2-V1.Start to inject into chamber 10 by quality as a result, The halogen-containing gas of the flow of flow controller MFC setting.According to the flow of mass flow controller MFC and by timer Thg The time of measurement critically controls injection rate of the halogen-containing gas to chamber 10.In addition, here, valve F2-V2 is still closed.
Then, in S2406, gas control unit 32 determines whether the time measured by timer Thg reaches specified value Khg.In the case where the time measured by timer Thg being not up to specified value Khg (S2406: no), gas control unit 32 is standby Until reaching specified value Khg.(S2406: yes), gas in the case where the time measured by timer Thg reaching specified value Khg Body control unit 32 makes processing enter S2407.
In S2407, gas control unit 32 closes valve F2-V1.Stop injecting halogen-containing gas to chamber 10 as a result,.
Then, in S2408, gas control unit 32 opens valve EX-V2.Start the laser gas in discharge chamber 10 as a result, Body.In addition, here, not driving exhaust pump 46, valve EX-V1 is still closed.
Then, in S2409, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16.
Then, in S2410, gas control unit 32 determine air pressure P whether become the initial value Ph0 that is stored in S2402 with Under.Do not become in initial value Ph0 situation below (S2410: no) in air pressure P, gas control unit 32 makes that processing returns to above-mentioned S2409.In the case where air pressure P becomes initial value Ph0 situation below (S2410: yes), gas control unit 32 makes processing enter S2411.
In S2411, gas control unit 32 closes valve EX-V2.The discharge of the laser gas in chamber 10 terminates as a result,.
By the processing of above-mentioned S2401~S2407, the halogen partial pressure in chamber 10 increases.Moreover, passing through above-mentioned S2408 The processing of~S2411, the air pressure P in chamber 10 return to initial value Ph0.Therefore, before and after halogen gas injection control, chamber Halogen partial pressure in room 10 increases, and still, the air pressure P in chamber 10 has almost no change.
Then, gas control unit 32 terminates the processing of this flow chart, returns to processing shown in Fig. 3.
3.2.3.4 portion gas replacement control
Fig. 7 is the flow chart for showing the details of processing of portion gas replacement control shown in Fig. 3.It is shown in Fig. 7 It handles the subroutine as S2500 shown in Fig. 3 and is carried out by gas control unit 32.The all gas replacement illustrated referring to Fig. 4 Processing laser generation is off to carry out, in contrast, portion gas described below replacement control is to be swashed on one side What light generation carried out on one side.
Firstly, other than used parameter is different, the processing of S2501~S2507 and the S2401 illustrated referring to Fig. 6 The processing of~S2407 is identical.Respectively instead of the initial value Ph0 of air pressure, timer Thg, specified value Khg and use air pressure it is initial Value Ppg0, timer Tpg, specified value Kpg.By the processing of S2501~S2507, halogen-containing gas is injected into chamber 10.
Then, by the processing of S2508~S2513, buffer gas is injected into chamber 10.
Firstly, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16 in S2508.
Then, in S2509, there is storage for current air pressure P as the initial value Ppgho of air pressure in gas control unit 32 In device.
Then, in S2510, gas control unit 32 opens valve B-V.Start to supply buffer gas into chamber 10 as a result,.
Then, in S2511, gas control unit 32 reads in the air pressure P in chamber 10 from pressure sensor 16.
Then, in S2512, gas control unit 32 determines whether air pressure P becomes regulation air pressure Ppgho+ Δ Pbpg or more. Regulation air pressure Ppgho+ Δ Pbpg is in the initial value Ppgho stored in S2509 plus the buffer gas note for being scaled pressure Enter value obtained from amount Δ Pbpg.In the case where air pressure P does not become regulation air pressure Ppgho+ Δ Pbpg or more (S2512: no), Gas control unit 32 makes that processing returns to above-mentioned S2511.In the case where air pressure P becomes regulation air pressure Ppgho+ Δ Pbpg or more (S2512: yes), gas control unit 32 makes processing enter S2513.
In S2513, gas control unit 32 closes valve B-V.Terminate to inject buffer gas into chamber 10 as a result,.
The processing of next S2514~S2517 is roughly the same with the processing of S2408~S2411 illustrated referring to Fig. 6. But by the processing of S2514~S2517, air pressure P returns to the initial value Ppg0 stored in S2502.Therefore, in part gas Body replaces the front and back of control, and the air pressure P in chamber 10 has almost no change.
Also, the buffering gas of the processing of the halogen-containing gas injection rate of the processing of S2501~S2507 and S2508~S2513 The value that the ratio of body injection rate is configured to not make the halogen gas concentration in chamber 10 to change.Therefore, it is replaced in portion gas The front and back of control, the halogen partial pressure in chamber 10 have almost no change.
Then, gas control unit 32 terminates the processing of this flow chart, returns to processing shown in Fig. 3.
3.2.3.5 determine whether to carry out all gas replacement
Fig. 8 is the flow chart for showing the details of the processing shown in Fig. 3 for determining whether to carry out all gas replacement.Figure The subroutine as S2700 shown in Fig. 3 is handled shown in 8 and is carried out by gas control unit 32.
Firstly, in S2701, what gas control unit 32 read in the pulse laser after all gas replacement penetrates several Gshot's Value.
Then, in S2702, gas control unit 32 reads in the value by time Gtime after all gas replacement.
Then, in S2705, gas control unit 32 determines that several Gshot that penetrate of the pulse laser after all gas replacement are It is no to penetrate several Gshot_limit less than the 1st.It is preferred that the 1st penetrate several Gshot_limit be, for example, for 86 × 1,000,000 times or more and 500 × 1000000 times or less.In the case where Gshot is less than Gshot_limit (S2705: yes), gas control unit 32 enters processing S2706.In the case where Gshot reaches Gshot_limit (S2705: no), gas control unit 32 makes processing enter S2739.
In S2706, whether pass through time Gtime less than the 1st warp after the judgement all gas replacement of gas control unit 32 Cross time Gtime_limit.It is preferred that the 1st is, for example, 72 hours or more and 500 hours or less by time Gtime_limit.? Gtime is less than in the case where Gtime_limit (S2706: yes), and not up to progress all gas replaces such criterion, Gas control unit 32 terminates the processing of this flow chart, returns to processing shown in Fig. 3.The case where Gtime reaches Gtime_limit Under (S2706: no), gas control unit 32 makes processing enter S2739.
In S2739, gas control unit 32 is judged to carrying out all gas replacement.Then, gas control unit 32 terminates this The processing of flow chart returns to processing shown in Fig. 3.
3.3 project
Fig. 9 is the curve graph for showing the variation of the indoor air pressure of chamber of comparative example.Horizontal axis indicate pulse laser penetrate number or By the time, the longitudinal axis indicates the indoor air pressure of chamber.In excimer laser apparatus, upper limit value is set with for the indoor air pressure of chamber UL.The upper limit value UL of air pressure be set as than can prevent the gas of chamber and piping from leaking design on pressure limit value it is low Value.The upper limit value UL of air pressure is for example maintained in aftermentioned storage memory 1005.Gas control unit or card for laser control unit are in chamber Indoor air pressure sounds an alarm when being more than upper limit value UL, stops the supply gas into chamber.
Carry out chamber replacement or all gas replacement (referring to Fig. 4), the impurity for including in the indoor laser gas of chamber compared with In the state of few, even if the indoor air pressure of chamber is not high, the laser with enough energy is also generated.When in the indoor laser gas of chamber When the impurity for including becomes more, in order to generate the laser with enough energy, the indoor gas of chamber is made by pressure control (referring to Fig. 5) Buckling is high.
As indicated by the solid line in fig. 9, in general, before the indoor air pressure of chamber reaches upper limit value UL, it is preset penetrate number or It arrives by the time, gas is replaced.But after chamber is just replaced, the surface portion of the component of chamber interior and The halogen gas reaction for including in laser gas, generates sometimes than usually more impurity.When generating than usually more impurity, such as In Fig. 9 shown in dotted line, may above-mentioned pulse laser penetrate number or by the time arrive before, the indoor air pressure of chamber reaches the upper limit Value UL.When the indoor air pressure of chamber reaches upper limit value UL, the pulse laser with enough energy can not be generated, becomes output sometimes Mistake and laser aid stop.
Led to the problem of after chamber is just replaced this, if the component of chamber interior is passivated, the generation of impurity will be by Inhibit.Thus, for example also considering after chamber is just replaced, frequent progress all gas is replaced to be passivated, in chamber After the component passivation in portion, the frequency that all gas is replaced is changed to common value.But manually parameter setting change is not only Labour and time are needed, may must also stop laser to carry out parameter setting change.
In embodiments described below, illustrate the passivation mode and passivation for automatically switching to carry out after chamber has just been replaced The laser aid of the normal mode carried out after mode.
4. after chamber is just replaced, the laser aid of the frequency of raising all gas replacement
Figure 10 is to determine whether to carry out all gas replacement in the laser aid for the 1st embodiment for showing the disclosure The flow chart of the details of processing.
The laser aid and above-mentioned comparative example of 1st embodiment are the difference is that determine whether to carry out all gas more The processing changed.Other aspects can be identical as comparative example.
As described below, it in the 1st embodiment, after chamber is just replaced, is improved compared with usually complete The frequency of portion's gas replacement.
Firstly, the processing of the S2701 and S2702 of Figure 10 are identical as the processing illustrated referring to Fig. 8.
Then, in S2703, gas control unit 32 reads in passivation from the aftermentioned storage equal storage devices of memory 1005 The data of residue degree Pcount.Here, the number of passivation is set as the number of the replacement of all gas in passivation mode.Passivation The initial value of residue degree Pcount is total number of all gas replacement in passivation mode, the rule being equivalent in the application Determine number.The initial value of the residue degree Pcount of passivation is for example preferably 1 time or more and 28 times or less.Residue about passivation The data of number Pcount, the data that storage device can keep operator to pre-enter via aftermentioned user interface 1010 etc., Storage device can also be input to from other control units via network etc..Alternatively, sometimes by chamber sequence number after chamber replacement Or the chamber after replacement penetrates number and is input to storage device.In this case, being penetrated about the chamber after chamber sequence number or replacement several Input, can be implemented by operator, can also be carried out via network etc..In this case, it can be the detection of gas control unit 32 Number is penetrated to chamber sequence number or chamber to be updated, and the residue degree Pcount of the passivation pre-entered is read in from storage device.
Then, in S2704, gas control unit 32 determines whether the residue degree Pcount of passivation is 0.In the surplus of passivation Complementary degree Pcount is in the case where 0 (S2704: yes), and gas control unit 32 makes processing enter S2705.S2705~S2739's Processing is the processing of normal mode, identical as the processing illustrated referring to Fig. 8.
In the case where the residue degree Pcount of passivation is not 0 (S2704: no), gas control unit 32 enters processing S2755.The processing of S2755~S2789 is the processing of passivation mode.
In S2755, gas control unit 32 determines that the pulse laser after all gas replacement penetrates whether several Gshot are less than 2nd penetrates several Gshot_limit_p.2nd penetrate several Gshot_limit_p be penetrated than the above-mentioned 1st several Gshot_limit it is few penetrate number. Gshot_limit_p is for example preferably 14 × 1,000,000 times or more and 86 × 1,000,000 times or less.It is less than Gshot_ in Gshot In the case where limit_p (S2755: yes), gas control unit 32 makes processing enter S2756.Reach Gshot_limit_ in Gshot In the case where p (S2755: no), gas control unit 32 makes processing enter S2757.
In S2756, whether pass through time Gtime less than the 2nd warp after the judgement all gas replacement of gas control unit 32 Cross time Gtime_limit_p.2nd process time Gtime_limit_p is shorter by time Gtime_limit than the above-mentioned 1st Time.Gtime_limit_p is for example preferably 12 hours or more and 72 hours or less.It is less than Gtime_limit_p in Gtime In the case where (S2756: yes), not up to progress all gas replaces such criterion, and gas control unit 32 terminates this stream The processing of journey figure returns to processing shown in Fig. 3.(S2756: no), gas in the case where Gtime reaches Gtime_limit_p Control unit 32 makes processing enter S2757.
In S2757, gas control unit 32 subtracts 1 from the residue degree Pcount of current passivation, to Pcount's Value is updated.
Then, in S2789, gas control unit 32 is judged to carrying out all gas replacement.Then, 32 knot of gas control unit The processing of this flow chart of beam returns to processing shown in Fig. 3.
By handling above, in passivation mode, compared with normal mode, several or shorter process time is penetrated with less Carry out all gas replacement.
Figure 11 is the curve graph for showing the variation of the indoor air pressure of chamber in the 1st embodiment.Horizontal axis indicates pulse laser Penetrate number or by the time, the longitudinal axis indicates the indoor air pressure of chamber.
As shown in phantom in Figure 11, it generates after chamber is just replaced than usually more impurity, number is penetrated with less sometimes Or the shorter time gets higher the indoor air pressure of chamber.But by the processing of above-mentioned passivation mode, all gas is carried out more in advance It changes, therefore, the indoor air pressure of chamber is inhibited to reach upper limit value UL.
In a period of carrying out all gas replacement of stipulated number Pcount in passivation mode, in the component of chamber interior Surface formed envelope and be passivated.Inhibit the generation of impurity as a result,.Then, the rising of air pressure gradually mitigates.Therefore, though The value of Pcount is transferred to normal mode when becoming 0, also the indoor air pressure of chamber is inhibited to reach upper limit value UL.
5. after chamber is just replaced, air pressure reach the laser aid that all gas replacement is carried out after regulation air pressure
Figure 12 is to determine whether to carry out all gas replacement in the laser aid for the 2nd embodiment for showing the disclosure The flow chart of the details of processing.
The laser aid and above-mentioned comparative example of 2nd embodiment are the difference is that determine whether to carry out all gas more The processing changed.Other aspects can be identical as comparative example.
As described below, in the 2nd embodiment, after chamber is just replaced, reach regulation air pressure in air pressure All gas replacement is carried out afterwards.
Firstly, the processing of the S2701 and S2702 of Figure 12 are identical as the processing illustrated referring to Fig. 8.
The processing of the S2705 and S2706 of Figure 12 are also identical as the processing illustrated referring to Fig. 8.
Gshot is less than Gtime in Gshot_limit (S2705: yes) and S2706 and is less than Gtime_limit in S2705 In the case where (S2706: yes), gas control unit 32 makes processing enter S2767.
In S2767, gas control unit 32 reads in the value of mark Fbpr from storage device.After chamber replacement, mark The value of Fbpr is set to initial value 1, until being changed to 0 in aftermentioned S2718.About the value of mark Fbpr, Ke Yiyou The data that storage device keeps operator to pre-enter, can also be input to storage device from other control units via network etc.. Alternatively, can also be same as the residue degree Pcount of passivation in the 1st embodiment, gas control unit 32 detects chamber sequence Row number or chamber are penetrated number and are updated, and the mark Fbpr pre-entered is read in from storage device.
Then, in S2768, whether the value of 32 determination flag Fbpr of gas control unit is 1.It is 1 in the value of mark Fbpr In the case where (S2768: yes), gas control unit 32 makes processing enter S2769.The processing of S2769~S2789 is passivation mode Processing.
In S2769, gas control unit 32 reads in the data of the air pressure P exported from pressure sensor 16.Then, exist In S2779, gas control unit 32 determines whether air pressure P is less than all gas replacement request pressure Ppbr_limit.All gas Replacement request pressure Ppbr_limit is set as the value lower than above-mentioned air pressure upper limit value UL.For example, all gas replacement request pressure Power Ppbr_limit is set as 90% or more and 99% the following value of air pressure upper limit value UL.All gas replacement request pressure Ppbr_limit is equivalent to the 1st regulation air pressure in the application, and air pressure upper limit value UL is equivalent to the 2nd regulation gas in the application Pressure.
In the case that air pressure P reaches Ppbr_limit in S2779 (S2779: no), gas control unit 32 enters processing S2789.In S2789, gas control unit 32 is judged to carrying out all gas replacement.Then, gas control unit 32 terminates this stream The processing of journey figure returns to processing shown in Fig. 3.
In the case that air pressure P is less than Ppbr_limit in S2779 (S2779: yes), not up to progress all gas replacement Such criterion, gas control unit 32 terminate the processing of this flow chart, return to processing shown in Fig. 3.
Gtime reaches in (S2705: no) or S2706 in the case that Gshot reaches Gshot_limit in above-mentioned S2705 In the case where Gtime_limit (S2706: no), gas control unit 32 makes processing enter S2718.Air pressure P reaches in S2779 To before Ppbr_limit, in the case where Gshot reaches Gshot_limit or Gtime reaches Gtime_limit, S2705 or The judgement result of S2706 becomes "No".In this case, it can be judged as that the surface of the component in chamber interior has formed envelope And it is passivated.Therefore, in S2718, the value for indicating Fbpr is set as 0 by gas control unit 32.The processing of S2718 and S2739 is A part of the processing of normal mode.The processing of S2739 is identical as the processing illustrated referring to Fig. 8.
Indicate that the value of Fbpr after being set as 0, is determined as "No" in above-mentioned S2768, without S2769~S2789 Processing.It is determined as that the processing in the case where "No" is a part of the processing of normal mode in S2768.Determine in S2768 In the case where for "No", not up to progress all gas replaces such criterion, and gas control unit 32 terminates this flow chart Processing, return to processing shown in Fig. 3.
Figure 13 is the curve graph for showing the variation of the indoor air pressure of chamber in the 2nd embodiment.Horizontal axis indicates pulse laser Penetrate number or by the time, the longitudinal axis indicates the indoor air pressure of chamber.
As shown in phantom in Figure 13, it generates after chamber is just replaced than usually more impurity, number is penetrated with less sometimes Or the shorter time gets higher the indoor air pressure of chamber.But by the processing of above-mentioned passivation mode, reach in the indoor air pressure of chamber All gas replacement is carried out before upper limit value UL.
It is repeated under passivation mode in during all gas is replaced, forms quilt on the surface of the component of chamber interior Film and be passivated.Inhibit the generation of impurity as a result,.Then, the rising of air pressure gradually mitigates.Air pressure P reach Ppbr_limit it Before, in the case where Gshot reaches Gshot_limit or Gtime reaches Gtime_limit, can also be gone with passivation mode Except the condition of Ppbr_limit.
6. increasing the laser of injection discharge amount after chamber is just replaced, in portion gas replacement or halogen gas injection Device
Figure 14 is to show the laser gas of the gas control unit 32 of the laser aid of the 3rd embodiment of the disclosure to control The flow chart of processing.
The laser aid of 3rd embodiment is with above-mentioned comparative example the difference is that the processing of gas control unit 32.Its His aspect can be identical as comparative example.
As described below, in the 3rd embodiment, after chamber is just replaced, compared with usually, augmenting portion Injection discharge amount in gas replacement or halogen gas injection.
Firstly, the processing of S1000~S1200 of Figure 14 is identical as the processing illustrated referring to Fig. 3.
After carrying out all gas replacement in S1200, in S1300, the selection injection discharge amount of gas control unit 32.Blunt Different injection discharge amounts is selected in change mode and normal mode.The details of the processing of the selection of discharge amount is injected referring to figure 15 are described below.
The processing of next S1500~S2800 is identical as the processing illustrated referring to Fig. 3.According to what is selected in S1300 Discharge amount is injected, the halogen gas injection control of S2400 and the portion gas replacement control of S2500 are carried out.
Figure 15 is the flow chart for showing the details of processing for the selection that discharge amount is injected shown in Figure 14.Shown in Figure 15 Processing as S1300 shown in Figure 14 subroutine and carried out by gas control unit 32.
Firstly, gas control unit 32 reads in the data of the residue degree Pcount of passivation in S1303.The number of passivation It is set as the number of all gas replacement in passivation mode.The initial value of the residue degree Pcount of passivation is in passivation mode Total number of all gas replacement, the stipulated number being equivalent in the application.The initial value of the residue degree Pcount of passivation Such as preferably 1 time or more and 28 times or less.
Then, in S1304, gas control unit 32 determines whether the residue degree Pcount of passivation is 0.In the surplus of passivation Complementary degree Pcount is in the case where 0 (S1304: yes), and gas control unit 32 makes processing enter S1308.S1308's and S1309 Processing is the processing of normal mode.
In S1308, halogen gas is injected the halogen-containing gas injection rate Δ in control (S2400) by gas control unit 32 Pphg is set as common injection rate Δ Pphg_nml.It is determined in above-mentioned S2406 according to halogen-containing gas injection rate Δ Pphg Specified value Khg.
Then, in S1309, portion gas is replaced the buffer gas in control (S2500) and injected by gas control unit 32 Amount Δ Pbpg is set as common injection rate Δ Pbpg_nml.It is determined in above-mentioned S2506 according to buffer gas injection rate Δ Pbpg Specified value Khg.The judgement in above-mentioned S2512 is carried out according to buffer gas injection rate Δ Pbpg.
After S1309, gas control unit 32 terminates the processing of this flow chart, returns and handles shown in Figure 14.
(S1304: no), gas control unit 32 in the case that the residue degree Pcount being passivated in above-mentioned S1304 is not 0 Processing is set to enter S1357.The processing of S1357~S1359 is the processing of passivation mode.
In S1357, gas control unit 32 cries out 1 from the residue degree Pcount of current passivation, to Pcount Value be updated.As described above, selection injection discharge amount after all gas replacement is carried out in S1200, therefore, whenever blunt When carrying out all gas replacement in change mode, by S1357, the value of Pcount is counted downwards.
Then, in S1358, gas control unit 32 infuses the halogen-containing gas that halogen gas injects in control (S2400) Enter amount Δ Pphg to be set as to common injection rate Δ Pphg_nml multiplied by value obtained from requirement ratio Prate.Requirement ratio The value of Prate is set as the value greater than 1.The value of requirement ratio Prate is for example set as 200%.
Then, in S1359, portion gas is replaced the buffer gas in control (S2500) and injected by gas control unit 32 Amount Δ Pbpg is set as to common injection rate Δ Pbpg_nml multiplied by value obtained from requirement ratio Prate.
After S1359, gas control unit 32 terminates the processing of this flow chart, returns and handles shown in Figure 14.
It is handled by the selection of above injection discharge amount, in passivation mode, injects control and part in halogen gas In gas replacement control, is injected into chamber than usually more gas, the gas of amount roughly the same with injection rate is discharged from chamber. The indoor impurity of more chamber is discharged in halogen gas injection control and portion gas replacement control as a result, therefore, inhibits chamber The accumulation of indoor impurity.
Figure 16 is the curve graph for showing the variation of the indoor air pressure of chamber in the 3rd embodiment.Horizontal axis indicates pulse laser Penetrate number or by the time, the longitudinal axis indicates the indoor air pressure of chamber.
As shown in phantom in Figure 16, it generates after chamber is just replaced than usually more impurity, number is penetrated with less sometimes Or the shorter time gets higher the indoor air pressure of chamber.But by the processing of above-mentioned passivation mode, make halogen gas injection control And/or gas injection rate and discharge amount increase in portion gas replacement control.Inhibit the accumulation of the indoor impurity of chamber as a result, Therefore, inhibit the rising of the indoor air pressure of chamber.
In a period of carrying out all gas replacement of stipulated number Pcount under passivation mode, in the component of chamber interior Surface formed envelope and be passivated.Inhibit the generation of impurity as a result,.Then, the rising of air pressure mitigates.Therefore, though The value of Pcount is transferred to normal mode when becoming 0, also the indoor air pressure of chamber is inhibited to reach upper limit value UL.
In the 3rd embodiment, illustrate to make halogen-containing gas injection rate Δ Pphg and buffer gas injection rate Δ Pbpg The case where becoming different value in normal mode and passivation mode, still, the present disclosure is not limited thereto.It can also be by making air pressure control The increase and decrease amplitude, ao Pt (referring to Fig. 5, S1908 and S1912) of air pressure in system becomes difference in normal mode and passivation mode Value, to inhibit the accumulation of impurity.
7.MOPO system
Figure 17 roughly shows the structure of the laser aid of the 4th embodiment of the disclosure.The laser of 4th embodiment fills It sets with master oscillator MO and power oscillator PO.The structure of laser oscillation system in the structure and comparative example of master oscillator MO It is roughly the same.
Power oscillator PO includes chamber 20, pulse power module 23, output coupling mirror 25, pressure sensor 26, energy Monitor 27.2 windows 20a and 20b are provided in chamber 20.A pair of discharge electrodes 21a and 21b are contained in chamber 20. Energy monitor 27 includes beam splitter 27a, convergent lens 27b, optical sensor 27c.These structures are corresponding with master oscillator MO Each structure it is roughly the same.
Power oscillator PO replaces narrowband module 14 and has partially reflecting mirror 24.Swash what is exported from master oscillator MO It is configured with high reflection mirror 18a and 18b in the optical path of light, matches in the optical path of the laser successively reflected by high reflection mirror 18a and 18b It is equipped with partially reflecting mirror 24.At least part of the laser exported from master oscillator MO passes through partially reflecting mirror 24 and is incident on chamber Room 20.Optical resonator is constituted using partially reflecting mirror 24 and output coupling mirror 25.
Gas supply tapping equipment 40 piping in branched halfway, both connect with the chamber 10 of master oscillator MO, also with function The chamber 20 of rate oscillator PO connects.The 1st branch in piping after branch, connecting with the chamber 10 of master oscillator MO matches It is provided with valve MO-V on pipe 39a, is provided with valve PO- on the 2nd branch piping 39b that the chamber 20 with power oscillator PO is connect V.These valves MO-V, PO-V can be opened and closed independently of each other.
Gas supply tapping equipment 40 is capable of the chamber 20 of chamber 10 and power oscillator PO to master oscillator MO as a result, In the laser gas of either or both controlled.For example, after the just chamber 10 of replacement master oscillator MO, it can The control comprising passivation mode is carried out for the chamber 10 of master oscillator MO.Also, in the chamber of just replacement power oscillator PO After 20, the control comprising passivation mode can be carried out for the chamber 20 of power oscillator PO.
8. the structure of control unit
Figure 18 is the block diagram for showing the outline structure of control unit.
The control units such as the gas control unit 32 in above embodiment can be general by computer or programmable controller etc. Equipment is controlled to constitute.For example, can constitute as follows.
(structure)
Control unit can be by processing unit 1000 and the storage connecting with processing unit 1000 memory 1005, user interface 1010, Parallel I/O controller 1020, serial i/O controller 1030, A/D, D/A converter 1040 are constituted.Also, processing unit 1000 can be made of CPU1001 and the memory connecting with CPU1001 1002, timer 1003, GPU1004.
(movement)
Processing unit 1000 can read storage with the program stored in memory 1005.Also, processing unit 1000 can be held The read-out program of row reads data from storage memory 1005 according to the execution of program, in storage memory 1005 Middle storing data.
Parallel I/O controller 1020 can with can connect via 1021~102x of equipment that Parallel I/O port is communicated It connects.Parallel I/O controller 1020 can to processing unit 1000 execute program during carry out, via Parallel I/O port , the communication based on digital signal controlled.
Serial i/O controller 1030 can with can connect via 1031~103x of equipment that serial i/o port is communicated It connects.Serial i/O controller 1030 can to processing unit 1000 execute program during carry out, via serial i/o port , the communication based on digital signal controlled.
A/D, D/A converter 1040 can with can be connect via 1041~104x of equipment that analog port is communicated. A/D, D/A converter 1040 can to processing unit 1000 execute program during carry out, it is via analog port, be based on The communication of analog signal is controlled.
User interface 1010 is configured to, the implementation procedure for the program that display operation person is executed by processing unit 1000, Processing unit 1000 is set to carry out suspension or interrupt processing that program caused by operator executes.And it is possible to be configured to, it can be for behaviour The residue degree Pcount, chamber sequence number, the chamber after replacement that work person inputs passivation penetrate the data such as number.
The CPU1001 of processing unit 1000 can carry out the calculation process of program.Memory 1002 can be executed in CPU1001 The temporarily storage of program, the temporary storage of the data in calculating process are carried out during program.Timer 1003 can measure Moment passes through the time, according to the execution of program to CPU1001 output time or by the time.GPU1004 can be to place When 1000 input image data of reason portion, image data is handled according to the execution of program, its result is output to CPU1001。
1021~the 102x of equipment that can be communicated via Parallel I/O port being connect with Parallel I/O controller 1020, It can be the exposure device 100 for sending the data setting signal of light emission trigger signal or target impulse energy, be also possible to other Control unit etc..Also, 1021~102x of equipment can be the charger 12 for receiving the data setting signal of charging voltage, can also be with It is valve B-V, F2-V1, EX-V1 etc..
Connect with serial i/O controller 1030 can via 1031~103x of equipment that serial i/o port is communicated, It can be motor 22, exhaust pump 46 etc..
What is connect with A/D, D/A converter 1040 can be via 1041~104x of equipment that analog port is communicated, can To be the various sensors such as pressure sensor 16 or optical sensor 17c.
By constituting as described above, control unit can be realized movement shown in each embodiment.
It is above explained to be not intended to limit, but simple illustration.It therefore, it will be understood by the skilled person that can Embodiment of the present disclosure is applied under the premise of not departing from appended claims and is changed.
Term used in this specification and the appended claims book entirety should be construed to " non-limiting " term.Example Such as, term as "comprising" or " being included " should be construed to " being not limited to the case where being recorded as included content "." tool Have " as term should be construed to " the case where being not limited to the content for being recorded as having ".Also, this specification and additional power The modification sentence recorded in sharp claim "one" should be construed as to imply that "at least one" or " one or more ".

Claims (18)

1. a kind of laser aid, wherein the laser aid includes
Chamber is configured with a pair of discharge electrodes in inside；
Gas supply tapping equipment, to the inside of the chamber supply laser gas, and discharge the chamber inside swash Phosgene body；And
Control unit consists of the 1st control of progress and the 2nd control,
In the 1st control, gas supply tapping equipment is controlled, when penetrating number according to the 1st or pass through according to the 1st Between, stop laser generation and replace the indoor laser gas of the chamber,
The 2nd control in, to the gas supply tapping equipment control, with it is described 1st control before, according to than institute State the 1st penetrate several few 2 penetrate number or according to than the described 1st by the time it is short the 2nd by the time, stop the laser generation Replace the indoor laser gas of the chamber.
2. laser aid according to claim 1, wherein
The control unit carries out the 2nd control of stipulated number after chamber replacement, then, carries out the 1st control System.
3. laser aid according to claim 2, wherein
The stipulated number is 1 time or more and 28 times or less.
4. laser aid according to claim 1, wherein
Described 1st penetrate number for 86 × 1,000,000 times or more and 500 × 1,000,000 times hereinafter, the described 2nd penetrate number be 14 × 1,000,000 times with It is upper and 86 × 1,000,000 times or less.
5. laser aid according to claim 1, wherein
The 1st process time is 72 hours or more and 500 hours hereinafter, the 2nd process time is 12 hours or more and 72 Hour or less.
6. a kind of laser aid, wherein the laser aid includes
Chamber is configured with a pair of discharge electrodes in inside；
Gas supply tapping equipment, to the inside of the chamber supply laser gas, and discharge the chamber inside swash Phosgene body；
Pressure sensor is used to measure the air pressure of the inside of the chamber；And
Control unit consists of the 1st control of progress and the 2nd control,
In the 1st control, gas supply tapping equipment is controlled, when penetrating number according to the 1st or pass through according to the 1st Between, stop laser generation and replace the indoor laser gas of the chamber,
The 2nd control in, to the gas supply tapping equipment control, with it is described 1st control before, in the chamber In the case that the air pressure of the inside of room reaches the 1st regulation air pressure, stop the laser generation to replace the indoor laser of the chamber Gas.
7. laser aid according to claim 6, wherein
The control unit has reached the 1st before the air pressure of the inside of the chamber reaches the 1st regulation air pressure and has penetrated several feelings Under condition, the 1st control is carried out.
8. laser aid according to claim 7, wherein
Described 1st penetrates number as 86 × 1,000,000 times or more and 500 × 1,000,000 times or less.
9. laser aid according to claim 6, wherein
The control unit have passed through the described 1st before the air pressure of the inside of the chamber reaches the 1st regulation air pressure to be passed through In the case where time, the 1st control is carried out.
10. laser aid according to claim 9, wherein
The 1st process time is 72 hours or more and 500 hours or less.
11. laser aid according to claim 6, wherein
The control unit is configured to, and reaches the 2nd regulation air pressure bigger than the 1st regulation air pressure in the indoor air pressure of the chamber In the case of, stop the gas supply tapping equipment to the inside of the chamber and supply laser gas,
The 1st regulation air pressure is 90% or more and 99% or less of the 2nd regulation air pressure.
12. a kind of laser aid, wherein the laser aid includes
Chamber is configured with a pair of discharge electrodes in inside；
Gas supply tapping equipment, to the inside of the chamber supply laser gas, and discharge the chamber inside swash Phosgene body；And
Control unit consists of the 1st control of progress and the 2nd control,
In the 1st control, gas supply tapping equipment is controlled, laser generation is carried out with one side, on one side to institute It states the laser gas for supplying the 1st amount in chamber or discharges the laser gas of the 1st amount out of described chamber,
In the 2nd control, gas supply tapping equipment is controlled, carried out before the 1st control on one side The laser generation supplies the laser gas of 2nd amount more than the 1st amount or out of described chamber into the chamber on one side Discharge the laser gas of the 2nd amount.
13. laser aid according to claim 12, wherein
The control unit is configured to carry out the 3rd control, in the 3rd control, controls gas supply tapping equipment, To penetrate number or according to the 1st by the time according to the 1st, stop the laser generation to replace the indoor laser gas of the chamber,
After chamber replacement, before carrying out the 3rd control of stipulated number, the 2nd control is carried out, then, into Row the 1st control.
14. laser aid according to claim 13, wherein
The stipulated number is 1 time or more and 28 times or less.
15. laser aid according to claim 12, wherein
1st control and the 2nd control are for being higher than rule in the voltage for being applied to the pulse type of the pair of discharge electrode In the case where fixed upper limit value, laser gas is supplied in Xiang Suoshu chamber.
16. laser aid according to claim 12, wherein
1st control and the 2nd control are for being lower than rule in the voltage for being applied to the pulse type of the pair of discharge electrode In the case where fixed lower limit value, laser gas is discharged out of described chamber.
17. laser aid according to claim 12, wherein
The gas supply tapping equipment is configured to supply the 1st laser gas and the 2nd laser gas to the inside of the chamber, should 1st laser gas includes halogen gas, and the halogen gas concentration of the 2nd laser gas is lower than the 1st laser gas,
Described 1st controls the 1st laser gas for supplying the 1st amount into the chamber, and from the chamber The laser gas of interior discharge the 1st amount,
Described 2nd controls the 1st laser gas for supplying the 2nd amount into the chamber, and from the chamber The laser gas of interior discharge the 2nd amount.
18. laser aid according to claim 12, wherein
The gas supply tapping equipment is configured to supply the 1st laser gas and the 2nd laser gas to the inside of the chamber, should 1st laser gas includes halogen gas, and the halogen gas concentration of the 2nd laser gas is lower than the 1st laser gas,
1st control is for supplying the 1st laser gas and the 2nd laser gas into the chamber, so as to institute The total amount for stating the 1st laser gas and the 2nd laser gas that supply in chamber becomes the 1st amount, the 1st control System is also used to discharge the laser gas of the 1st amount out of described chamber,
2nd control is for supplying the 1st laser gas and the 2nd laser gas into the chamber, so as to institute The total amount for stating the 1st laser gas and the 2nd laser gas that supply in chamber becomes the 2nd amount, the 2nd control System is also used to discharge the laser gas of the 2nd amount out of described chamber.
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