CN109642810B - Sensor package and method of manufacturing sensor package - Google Patents

Sensor package and method of manufacturing sensor package Download PDF

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Publication number
CN109642810B
CN109642810B CN201780037591.1A CN201780037591A CN109642810B CN 109642810 B CN109642810 B CN 109642810B CN 201780037591 A CN201780037591 A CN 201780037591A CN 109642810 B CN109642810 B CN 109642810B
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China
Prior art keywords
interposer
dummy die
sensor package
asic device
carrier
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CN201780037591.1A
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Chinese (zh)
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CN109642810A (en
Inventor
威廉·弗雷德里克·阿德里亚努斯·贝斯林
卡斯珀·范德阿福尔特
昆拉德·科内利斯·塔克
瑞曼科·亨里克斯·威廉姆斯·皮内伯格
奥拉夫·文尼肯
昂德里克·布曼
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Sciosense BV
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Sciosense BV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
    • G01D11/24—Housings ; Casings for instruments
    • G01D11/245—Housings for sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/032—Gluing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0785—Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The sensor package comprises a carrier (1) having electrical conductors (13), an ASIC component (6) and a sensor element (7) integrated in the ASIC component (6). A dummy die or interposer (4) is disposed between the carrier (1) and the ASIC device (6). A dummy die or interposer (4) is secured to the carrier (1) and an ASIC device (6) is secured to the dummy die or interposer (4).

Description

Sensor package and method of manufacturing sensor package
Technical Field
The invention relates to a sensor package and a method for manufacturing a sensor package.
Background
Many integrated sensor devices, such as pressure sensors, hall sensors, gyroscopes or inertial sensors, are often very susceptible to stress, which can degrade performance or even damage fragile sensor structures. This problem is exacerbated for pressure sensors that require direct contact with the environment.
WO 2002/048668 a2 discloses an integrated CMOS capacitive pressure sensor.
US 2014/0090485 a1 discloses a MEMS pressure sensor assembly comprising a first die assembly including a MEMS pressure sensor and a second die assembly including an ASIC configured to produce an electrical output corresponding to a pressure sensed by the MEMS pressure sensor. A conductive member is positioned between the first die assembly and the second die assembly and electrically connects the MEMS pressure sensor and the ASIC.
Disclosure of Invention
It is an object of the present invention to disclose a compact sensor package adapted to mechanically decouple the sensor from external pressure, and a method of manufacturing such a sensor package.
This object is achieved by a sensor package according to claim 1 and by a method of manufacturing a sensor package according to claim 12. Embodiments and variants derive from the dependent claims.
The sensor package includes a carrier including electrical conductors and an ASIC device having an integrated sensor element. A dummy die or interposer is disposed between the carrier and the ASIC device and secured to the carrier. In particular, the dummy die or interposer may comprise an electrically inert semiconductor substrate, or it may comprise an insulator, in particular glass. The ASIC device is secured to a dummy die or interposer.
In an embodiment of the sensor package, an adhesive layer comprising silicone is disposed between the dummy die or interposer and the ASIC device. In particular, the adhesive layer may be at least 80 μm thick.
Another embodiment includes a cover having an opening. The dummy die or interposer and the ASIC device are disposed between the carrier and the lid.
In another embodiment, the sensor element is a pressure sensor.
In another embodiment, the sensor element is sensitive to pressure.
In another embodiment, the dummy die or interposer has smaller lateral dimensions than the ASIC device.
In another embodiment, the ASIC device laterally overhangs the dummy die or interposer by at least 100 μm on at least one side.
Another embodiment includes a bonding layer comprising a die attach foil and disposed between the carrier and the dummy die or interposer.
The method of manufacturing a sensor package includes: the method includes providing a carrier having electrical conductors, securing a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element, and securing the ASIC device to the dummy die or interposer.
In a variation of this method, the ASIC device is secured to the dummy die or interposer by an adhesive layer, which may include silicone, among others. In particular, the adhesive layer may be formed to be at least 80 μm thick.
In another variant of the method, the dummy die or interposer (4) is fixed to the carrier by a bonding layer comprising a die attach foil.
Drawings
Examples of the sensor package and the method of manufacturing are described in detail below with reference to the accompanying drawings.
Fig. 1 shows a cross-section of a sensor package including a dummy die or interposer.
Fig. 2 shows a cross-section of another sensor package including a dummy die or interposer and an overhanging ASIC device.
Fig. 3 shows a cross-section of another sensor package including a dummy die or interposer and an ASIC device with a larger overhang portion.
Fig. 4 shows a top view corresponding to the schematic in fig. 2.
Fig. 5 shows a top view corresponding to the schematic in fig. 3.
Detailed Description
Fig. 1 shows a cross-section of a sensor package comprising a carrier 1 with integrated electrical conductors 13, bottom pads 2 on or above a top surface 10 of the carrier 1, bonding layers 3 on the bottom pads 2, dummy dies or interposers 4 on the bonding layers 3, an adhesive layer 5 on the dummy dies or interposers 4, ASIC devices 6 with integrated sensor elements 7 on the adhesive layer 5, electrical interconnects 8 between contact pads 14 on the top surface 10 of the carrier 1 and the ASIC devices 6, caps 9 on the top surface 10, and terminal contacts 12 on a back surface 11 of the carrier 1 opposite the top surface 10. The dummy die or interposer 4 provides mechanical decoupling of the ASIC device 6 from the carrier 1. It is therefore possible to prevent deformation, which may be caused by an external force acting on the sensor package, from adversely affecting the sensor element 7 integrated in the ASIC device 6.
The carrier 1 may be a printed circuit board, for example, in particular a laminate. For example, the terminal contacts 12 on the rear surface 11 of the carrier 1 may be formed in the shape of a grid array package. Integrated electrical conductor 13 may provide routing or redistribution. The dummy die or interposer 4 may comprise a semiconductor material, which may in particular be silicon, and may in particular comprise an electrically inert semiconductor substrate. Alternatively, the dummy die or interposer 4 may comprise an insulator or glass, for example. The coefficient of thermal expansion of the insulator or glass can be adapted in particular to the coefficient of thermal expansion of the ASIC device 6.
The base pad 2 is optional. The bonding layer 3 may be, for example, a die attach foil.
The adhesive layer 5 may in particular comprise silicone, i.e. a polymer obtained by polymerizing silicone. Silicone may be applied like glue to secure the ASIC device 6 to the dummy die or interposer 4. The thickness t of the adhesive layer 5 is greater than 60 μm, typically at least 80 μm, for effective mechanical decoupling between the ASIC device 6 and the dummy die or interposer 4.
The ASIC device 6 may be a CMOS device, for example. The sensor element 7 may be any conventional sensor, in particular a pressure sensor or an array of pressure sensors, which may be realized, for example, as a micro-electromechanical system. The sensor element 7 may also comprise a pressure-sensitive sensor. The mechanical decoupling of the ASIC device 6 from the carrier 1 is improved if the dummy die or interposer 4 has smaller lateral dimensions than the ASIC device 6, so that a lateral overhang 15 is formed at least on one lateral side or edge of the ASIC device 6. The overhanging portion 15 may be much larger than the overhanging portion 15 shown in fig. 1.
The electrical interconnections 8 between the ASIC device 6 and the contact pads 14 on the top surface 10 of the carrier 1 may be bond lines, for example, as shown in fig. 1. The stack of dummy die or interposer 4 and ASIC device 6 is housed in a cavity 17, the cavity 17 being formed by the carrier 1 and the cap 9. The electrical interconnect 8 and the contact pad 14 are also inside the cavity 17. The cover 9 may comprise a metal cover. If the sensor element 7 is a pressure sensor that needs to be in contact with the environment, an opening 16 is provided in the cover 9.
Typically, the thickness of the carrier 1 may be in the range of 130 μm to 170 μm, the thickness of the bonding layer 3 is about 20 μm, the thickness of the dummy die or interposer 4 is in the range of 50 μm to 200 μm, the thickness of the adhesive layer 5 is in the range of 60 μm to more than 100 μm, the height H of the ASIC device 6 is in the range of 140 μm to 400 μm, and the total height H of the sensor package including the cap 9 is in the range of 600 μm to 1100 μm.
Fig. 2 is a cross-section of another sensor package including a dummy die or interposer 4. The elements of the sensor package according to fig. 2 are similar to the corresponding elements of the sensor package according to fig. 1 and are denoted by the same reference numerals. In the sensor package according to fig. 2, the lateral overhang 15 of the ASIC device 6 above the dummy die or interposer 4 is larger than in the sensor package according to fig. 1 in order to improve the mechanical decoupling. In particular, the overhanging portion 15 may be larger on two or three adjacent lateral sides or edges of the ASIC device 6, the shape of this arrangement resembling a mushroom called turkey tail (trametes discolor). The indicated dimension d of the overhanging portion 15 may typically be larger than 50 μm or even larger than 100 μm.
Fig. 3 is a cross-section of another sensor package including a dummy die or interposer 4. The elements of the sensor package according to fig. 3 are similar to the corresponding elements of the sensor package according to fig. 1 and are denoted by the same reference numerals. In the sensor package according to fig. 3, the laterally overhanging portion 15 of the ASIC device 6 above the dummy die or interposer 4 is even larger than the laterally overhanging portion 15 in the sensor package according to fig. 2. The overhanging portion 15 may be present on one side or edge or on two or three adjacent lateral sides or edges. The larger overhanging portion 15 allows the sensor element 7 to be displaced from the area of the ASIC device 6 supported by the dummy die or interposer 4 towards the area of the overhanging portion 15 in order to enhance the mechanical decoupling of the sensor element 7. The dimension d of the overhanging portion 15 shown in fig. 3 may be typically larger than 100 μm.
Fig. 4 is a top view of a stack of a dummy die or interposer 4 and an ASIC device 6 of the sensor package according to fig. 2, corresponding to the indication "IV" of the arrow pointing downwards in fig. 2. The hidden outline of the dummy die or interposer 4 covered by the ASIC device 6 is indicated by dashed lines in fig. 4. For example, the contact region 18 of the ASIC device 6 is electrically connected to the contact pad 14 by the interconnect 8, wherein the contact region 18 may be an uncovered surface area of the uppermost metallization layer of the wiring or a contact pad, in this example the interconnect 8 is a bond wire. The number and arrangement of contact pads 14 and contact areas 18 may vary according to individual requirements. The sensor element 7 may be arranged at or near the center of the ASIC-device 6, as shown by way of example in fig. 4, or near the edge of the ASIC-device 6. Fig. 4 shows a typical "turkey tail" configuration in which a large overhang 15 extends over three adjacent lateral sides or edges of the ASIC device 6. Alternatively, the large overhanging portion 15 may be present only on two adjacent lateral sides or edges of the ASIC device 6.
Fig. 5 is a top view of a stack of a dummy die or interposer 4 and an ASIC device 6 of the sensor package according to fig. 3, corresponding to the indication "V" of the downwardly pointing arrow in fig. 3. The hidden outline of the dummy die or interposer 4 covered by the ASIC device 6 is indicated by dashed lines in fig. 5. For example, the contact region 18 of the ASIC device 6 is electrically connected to the contact pad 14 by the interconnect 8, wherein the contact region 18 may be an uncovered surface area of the uppermost metallization layer of the wiring or a contact pad, in this example the interconnect 8 is a bond wire. The number and arrangement of contact pads 14 and contact areas 18 may vary according to individual requirements. The sensor element 7 is arranged in the region of the overhanging portion 15. Fig. 5 shows a "springboard" configuration, where the large overhanging portion 15 is only on one lateral side or edge of the ASIC device 6. Alternatively, the large overhanging portion 15 may be present on two or three adjacent lateral sides or edges of the ASIC device 6, as in the example shown in fig. 4.
The sensor package is particularly suitable for use in a pressure sensitive sensor. The sensor element and the circuitry are integrated on a single die, which allows to reduce the total height of the sensor package to a large extent. At the same time, pressure decoupling is enhanced by an electrically inert dummy die or interposer. Stress caused by thermal expansion is prevented if the coefficient of thermal expansion of the dummy die or interposer is adapted to the coefficient of thermal expansion of the ASIC device, in particular if the dummy die or interposer comprises the same semiconductor material as the ASIC device and thus has the same coefficient of thermal expansion.
List of reference numerals
1 vector
2 bottom pad
3 bonding layer
4 dummy die or interposer
5 adhesive layer
6 ASIC device
7 sensor element
8 interconnection element
9 cover
10 top surface
11 rear surface
12 terminal contact
13 electric conductor
14 contact pad
15 overhang part
16 opening
17 cavity
18 contact area
d size
h height of ASIC device
Height of H sensor package
t thickness

Claims (15)

1. A sensor package, comprising:
-a carrier (1) comprising an electrical conductor (13),
-an ASIC device (6), and
a sensor element (7),
it is characterized in that
-the sensor element (7) is integrated in an ASIC device (6),
-arranging a dummy die or interposer (4) between the carrier (1) and the ASIC device (6), and the dummy die or interposer (4) is fixed to the carrier (1),
-the ASIC device (6) is fixed to a dummy die or interposer (4), and
-the ASIC device (6) laterally overhangs the dummy die or interposer (4) by at least 100 μm.
2. The sensor package according to claim 1, wherein the dummy die or interposer (4) comprises an electrically inert semiconductor substrate.
3. The sensor package according to claim 1, wherein the dummy die or interposer (4) comprises an insulator or glass.
4. The sensor package of any of claims 1-3, further comprising:
an adhesive layer (5) between the dummy die or interposer (4) and the ASIC device (6), the adhesive layer (5) comprising silicone.
5. The sensor package according to claim 4, wherein the thickness of the adhesive layer (5) is at least 80 μm.
6. The sensor package of any of claims 1-3, further comprising:
a cap (9) having an opening (16), the dummy die or interposer (4) and the ASIC device (6) being arranged between the carrier (1) and the cap (9).
7. The sensor package according to any of claims 1 to 3, wherein the sensor element (7) is a pressure sensor.
8. A sensor package according to any of claims 1 to 3, wherein the sensor element (7) is sensitive to pressure.
9. The sensor package of any of claims 1 to 3, wherein
The dummy die or interposer (4) has smaller lateral dimensions than the ASIC device (6).
10. The sensor package of any of claims 1-3, further comprising:
a bonding layer (3) between the carrier (1) and the dummy die or interposer (4), the bonding layer (3) comprising a die attach foil.
11. A method of manufacturing a sensor package, comprising:
-providing a carrier (1) comprising an electrical conductor (13),
-fixing a dummy die or interposer (4) on a carrier (1),
-providing an ASIC device (6) comprising an integrated sensor element (7), and
-fixing the ASIC device (6) to the dummy die or interposer (4), wherein the ASIC device (6) is laterally overhanging the dummy die or interposer (4) by at least 100 μm.
12. The method of claim 11, further comprising:
the ASIC device (6) is fixed to a dummy die or interposer (4) by an adhesive layer (5).
13. The method according to claim 12, wherein the adhesive layer (5) comprises silicone.
14. The method according to claim 12 or 13, wherein the adhesive layer (5) is formed at least 80 μ ι η thick.
15. The method of any of claims 11 to 13, further comprising:
a dummy die or interposer (4) is fixed to the carrier (1) by a bonding layer (3) comprising a die attach foil.
CN201780037591.1A 2016-06-21 2017-06-14 Sensor package and method of manufacturing sensor package Active CN109642810B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16175474.2A EP3260821B1 (en) 2016-06-21 2016-06-21 Sensor package and method of producing the sensor package
EP16175474.2 2016-06-21
PCT/EP2017/064623 WO2017220417A1 (en) 2016-06-21 2017-06-14 Sensor package and method of producing the sensor package

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CN109642810A CN109642810A (en) 2019-04-16
CN109642810B true CN109642810B (en) 2022-01-25

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EP (1) EP3260821B1 (en)
CN (1) CN109642810B (en)
WO (1) WO2017220417A1 (en)

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