CN109638139A - A kind of light-emitting diode encapsulation structure - Google Patents
A kind of light-emitting diode encapsulation structure Download PDFInfo
- Publication number
- CN109638139A CN109638139A CN201811494291.9A CN201811494291A CN109638139A CN 109638139 A CN109638139 A CN 109638139A CN 201811494291 A CN201811494291 A CN 201811494291A CN 109638139 A CN109638139 A CN 109638139A
- Authority
- CN
- China
- Prior art keywords
- pedestal
- radiating
- emitting diode
- lens
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 13
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 230000017525 heat dissipation Effects 0.000 claims abstract description 3
- 238000003466 welding Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000843 powder Substances 0.000 abstract description 3
- 230000000712 assembly Effects 0.000 abstract description 2
- 238000000429 assembly Methods 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 abstract description 2
- 230000000638 stimulation Effects 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
The present invention relates to LED technology fields, and in particular to a kind of light-emitting diode encapsulation structure, the crystal including light emitting diode, further includes: pedestal, fixed ring, radiating subassembly, radiating wire, lens, transparent frame.Radiating subassembly is arranged in the present invention, fixed ring, radiating wire, the heat that LED operation generates is conducted to radiating wire by fixed ring, it is conducted again by radiating wire to radiating subassembly, realize the timely heat dissipation of crystal, to avoid influencing the stimulation effect of the fluorescent powder coated on crystal, radiating subassembly is set by snap ring, radiating fin, connect ring assemblies, heat can be made by radiating fin Quick diffusing, lens are set, the light source for enabling light emitting diode to issue is spread by lens, maximize light emitting region, hemispheric setting makes on lens that emission capabilities are uniform everywhere simultaneously, avoid illumination range uneven.
Description
Technical field
The present invention relates to LED technology fields, and in particular to a kind of light-emitting diode encapsulation structure.
Background technique
Light emitting diode at work, as the working time extends, generates certain heat, due to existing inside packaging part
Packaging part in technology is fully sealed, and the heat so as to cause accumulation can not distribute, and leads to light emitting diode to a certain extent
The fluorescent powder excitation degree of interior coating is different, and then influences luminous efficiency.
Summary of the invention
It is an object of the invention to overcome problems of the prior art, a kind of light-emitting diode encapsulation structure is provided,
It may be implemented in time to distribute the heat in light emitting diode, avoid influencing luminous efficiency.
To realize above-mentioned technical purpose and the technique effect, the present invention is achieved by the following technical solutions:
A kind of light-emitting diode encapsulation structure, the crystal including light emitting diode, further includes:
Pedestal；
Fixed ring, the fixed ring are set at the top of pedestal, and the crystal is fastened on fixed ring mesoporous；
Radiating subassembly, the radiating subassembly are connected in base outer wall；
Radiating wire, the radiating wire are embedded in pedestal, and one end is connected in the fixed ring, and the other end is connected to
On the radiating subassembly；
Lens, the lens are hemispherical, are arranged on the pedestal and cover on crystal；
Transparent frame, Transparent frame frame setting on the base and cover on lens, the transparent frame and lens it
Between be equipped with accommodating chamber, vacuumize process in the accommodating chamber.
Further, the transparent frame inner wall is equipped with arc chord angle.
Further, the fixed ring, radiating wire are made of aluminium material.
Further, the radiating subassembly from the inside to the outside successively include snap ring, radiating fin, connection ring, the snap ring with
Pedestal is affixed, and the snap ring, radiating fin, connection ring are made of alumal material.
Further, the two neighboring radiating fin spacing is set as 1~2cm.
Further, further includes:
Pedestal is welded, the welding pedestal is fixed in base bottom；
Sliding shoe there are two the sliding shoe is set, is made of horizontal segment, vertical section and is correspondingly arranged at the welding pedestal
It is interior, it is provided on the corresponding welding pedestal for sliding shoe engaging and card slot free to slide；
Conductive rod, the conductive rod is set in welding pedestal and its lower end is resisted against on horizontal segment；
Electrode wires there are two the electrode wires are set, are electrically connected on the positive and negative anodes of the crystal, far from described
Two conductive rods are electrically connected in crystal one end.
Beneficial effects of the present invention: setting radiating subassembly, fixed ring, radiating wire, by fixed ring by light-emitting diodes plumber
The heat for making to generate is conducted to radiating wire, then is conducted by radiating wire to radiating subassembly, realizes the timely heat dissipation of crystal, thus
Avoid the stimulation effect of fluorescent powder for influencing to coat on crystal, setting radiating subassembly by snap ring, radiating fin, connection ring assemblies,
Heat can be made by radiating fin Quick diffusing, lens are set, the light source for enabling light emitting diode to issue is expanded by lens
It dissipates, maximizes light emitting region, while hemispheric setting makes on lens that emission capabilities are uniform everywhere, avoids illumination range not
, the accommodating chamber of vacuumize process between transparent frame and lens is set, and in vacuum environment, light source emission efficiency highest is prevented
Only light source is decayed, setting welding pedestal, sliding shoe, conductive rod, electrode wires, and two electrode wires are electrical with the positive and negative anodes of crystal respectively
Connection, then since conductive rod is resisted against on sliding shoe, so that it is electrically connected two sliding shoes with the positive and negative anodes of crystal respectively,
When on LED welding to circuit board, it is only necessary to two sliding shoes is welded on circuit board, replace traditional technology
It is middle that the lead frame of light emitting diode is welded on circuit board, the rigidity of light emitting diode after welding is increased, is avoided due to drawing
Coil holder fractures caused quality problems, can slide in the card slot on welding pedestal additionally, due to sliding shoe, thus welding
When, welding position is adjusted by sliding sliding shoe in card slot, facilitates operation, improves efficiency.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, will be described below to embodiment required
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the schematic perspective view of radiating subassembly in the present invention；
In attached drawing, component representated by each label is as follows:
1- crystal, 2- pedestal, 3- fixed ring, 4- radiating subassembly, 5- radiating wire, 6- lens, the transparent frame of 7-, 8- are accommodated
Chamber, 9- arc chord angle, 10- snap ring, 11- radiating fin, 12- connection ring, 13- weld pedestal, 14- horizontal segment, 15- vertical section, 16-
Card slot, 17- conductive rod, 18- electrode wires.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, below will
In conjunction with the attached drawing in the embodiment of the present invention, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that
Described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the implementation in the present invention
Example, all other embodiment obtained by those of ordinary skill in the art without making creative efforts belong to
The scope of protection of the invention.
A kind of light-emitting diode encapsulation structure as shown in Figs. 1-2, the crystal 1 including light emitting diode, further includes:
Pedestal 2；
Fixed ring 3, the fixed ring 3 are set to 2 top of pedestal, and the crystal 1 is fastened on 3 mesoporous of fixed ring；
Radiating subassembly 4, the radiating subassembly 4 are connected on 2 outer wall of pedestal；
Radiating wire 5, the radiating wire 5 are embedded in pedestal 2, and one end is connected in the fixed ring 3, and the other end connects
It connects on the radiating subassembly 4；
Lens 6, the lens 6 are hemispherical, are arranged on the pedestal 1 and cover on crystal 1；
Transparent frame 7, the transparent frame 7 are arranged on pedestal 1 and cover on lens 6, the transparent frame 7 with thoroughly
Accommodating chamber 8, vacuumize process in the accommodating chamber 8 are equipped between mirror 6.
7 inner wall of transparent frame is equipped with arc chord angle 9, reduces the refractive index in lumination of light emitting diode time.
The fixed ring 3, radiating wire 5 are made of aluminium material.
The radiating subassembly 4 successively includes snap ring 10, radiating fin 11, connection ring 12 from the inside to the outside, the snap ring 10 with
Pedestal 2 is affixed, and the snap ring 10, radiating fin 11, connection ring 12 are made of alumal material.
Two neighboring 11 spacing of the radiating fin is set as 1~2cm, and the heat on two neighboring radiating fin is avoided to generate
Heat transfer.
Further include:
Pedestal 13 is welded, the welding pedestal 13 is fixed in 1 bottom of pedestal；
Sliding shoe there are two the sliding shoe is set, is made of horizontal segment 14, vertical section 15 and is correspondingly arranged at the welding
In pedestal 1, it is provided on the corresponding welding pedestal 1 for sliding shoe engaging and card slot 16 free to slide；
Conductive rod 17, the conductive rod 17 is set in welding pedestal 13 and its lower end is resisted against on horizontal segment 14；
Electrode wires 18 there are two the electrode wires 18 are set, are electrically connected on the positive and negative anodes of the crystal 1, remote
Two conductive rods 17 are electrically connected from described 1 one end of crystal.
Present invention disclosed above preferred embodiment is only intended to help to illustrate the present invention.There is no detailed for preferred embodiment
All details are described, are not limited the invention to the specific embodiments described.Obviously, according to the content of this specification,
It can make many modifications and variations.These embodiments are chosen and specifically described to this specification, is in order to better explain the present invention
Principle and practical application, so that skilled artisan be enable to better understand and utilize the present invention.The present invention is only
It is limited by claims and its full scope and equivalent.
Claims (6)
1. a kind of light-emitting diode encapsulation structure, the crystal (1) including light emitting diode, which is characterized in that further include:
Pedestal (2)；
Fixed ring (3), the fixed ring (3) are set at the top of pedestal (2), and the crystal (1) is fastened on fixed ring (3) mesoporous；
Radiating subassembly (4), the radiating subassembly (4) are connected on pedestal (2) outer wall；
Radiating wire (5), the radiating wire (5) are embedded in pedestal (2), and one end is connected on the fixed ring (3), another
End is connected on the radiating subassembly (4)；
Lens (6), the lens (6) are hemispherical, are arranged on the pedestal (1) and cover on crystal (1)；
Transparent frame (7), the transparent frame (7) are arranged on pedestal (1) and cover on lens (6), the transparent frame
(7) accommodating chamber (8) are equipped between lens (6), the interior vacuumize process of the accommodating chamber (8).
2. a kind of light-emitting diode encapsulation structure according to claim 1, which is characterized in that in the transparent frame (7)
Wall is equipped with arc chord angle (9).
3. a kind of light-emitting diode encapsulation structure according to claim 1, which is characterized in that the fixed ring (3), heat dissipation
Silk (5) is made of aluminium material.
4. a kind of light-emitting diode encapsulation structure according to claim 1, which is characterized in that the radiating subassembly (4) by
It is interior to outside successively include snap ring (10), radiating fin (11), connection ring (12), the snap ring (10) and pedestal (2) are affixed, described
Snap ring (10), radiating fin (11), connection ring (12) are made of alumal material.
5. a kind of light-emitting diode encapsulation structure according to claim 4, which is characterized in that the two neighboring radiating fin
Piece (11) spacing is set as 1~2cm.
6. a kind of light-emitting diode encapsulation structure according to claim 1, which is characterized in that further include:
It welds pedestal (13), the welding pedestal (13) is fixed in pedestal (1) bottom；
Sliding shoe there are two the sliding shoe is set, is made of horizontal segment (14), vertical section (15) and is correspondingly arranged at the welding
In pedestal (1), it is provided on corresponding welding pedestal (1) for sliding shoe engaging and card slot (16) free to slide；
Conductive rod (17), the conductive rod (17) is set in welding pedestal (13) and its lower end is resisted against on horizontal segment (14)；
Electrode wires (18), the electrode wires (18) are electrically connected on the positive and negative anodes of the crystal (1) there are two setting,
Two conductive rods (17) are electrically connected far from the crystal (1) one end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811494291.9A CN109638139B (en) | 2018-12-07 | 2018-12-07 | Light emitting diode packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811494291.9A CN109638139B (en) | 2018-12-07 | 2018-12-07 | Light emitting diode packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109638139A true CN109638139A (en) | 2019-04-16 |
| CN109638139B CN109638139B (en) | 2020-04-24 |
Family
ID=66071903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811494291.9A Active CN109638139B (en) | 2018-12-07 | 2018-12-07 | Light emitting diode packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109638139B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111540823A (en) * | 2020-07-07 | 2020-08-14 | 深圳市两岸光电科技有限公司 | LED packaging device with built-in constant voltage type drive and packaging method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120153326A1 (en) * | 2010-12-21 | 2012-06-21 | Advanced Optoelectronic Technology, Inc. | Light emitting diode package |
| CN206878036U (en) * | 2017-04-13 | 2018-01-12 | 深圳市能量光电有限公司 | A kind of cooling LED encapsulating structure |
| CN108470816A (en) * | 2018-05-08 | 2018-08-31 | 王滨波 | A kind of high-heat-dispersion LED packaging body |
| CN207962130U (en) * | 2018-01-30 | 2018-10-12 | 深圳市泰润光电科技有限公司 | A kind of white LED light source based on fluorescence ceramics and nanometer grating |
-
2018
- 2018-12-07 CN CN201811494291.9A patent/CN109638139B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120153326A1 (en) * | 2010-12-21 | 2012-06-21 | Advanced Optoelectronic Technology, Inc. | Light emitting diode package |
| CN206878036U (en) * | 2017-04-13 | 2018-01-12 | 深圳市能量光电有限公司 | A kind of cooling LED encapsulating structure |
| CN207962130U (en) * | 2018-01-30 | 2018-10-12 | 深圳市泰润光电科技有限公司 | A kind of white LED light source based on fluorescence ceramics and nanometer grating |
| CN108470816A (en) * | 2018-05-08 | 2018-08-31 | 王滨波 | A kind of high-heat-dispersion LED packaging body |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111540823A (en) * | 2020-07-07 | 2020-08-14 | 深圳市两岸光电科技有限公司 | LED packaging device with built-in constant voltage type drive and packaging method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109638139B (en) | 2020-04-24 |
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| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220622 Address after: 230000 Room 301 and 302, building 4, phase I, mechanical and Electrical Industrial Park, No. 767, Yulan Avenue, high tech Zone, Hefei City, Anhui Province Patentee after: Hefei Huayu Semiconductor Co.,Ltd. Address before: 230088 6th floor, building B, science and technology innovation public service and applied technology R & D center, hewubeng Experimental Zone, No. 860, Wangjiang West Road, high tech Zone, Hefei, Anhui Province Patentee before: HEFEI HUADA SEMICONDUCTOR Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 230000, No. 66 Tiantangzhai Road, High tech Zone, Hefei City, Anhui Province Patentee after: Hefei Huayu Semiconductor Co.,Ltd. Country or region after: China Address before: 230000 Room 301 and 302, building 4, phase I, mechanical and Electrical Industrial Park, No. 767, Yulan Avenue, high tech Zone, Hefei City, Anhui Province Patentee before: Hefei Huayu Semiconductor Co.,Ltd. Country or region before: China |