CN109637999B - Silicon-based inductor structure and layout of closed line therein - Google Patents
Silicon-based inductor structure and layout of closed line therein Download PDFInfo
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- CN109637999B CN109637999B CN201811554076.3A CN201811554076A CN109637999B CN 109637999 B CN109637999 B CN 109637999B CN 201811554076 A CN201811554076 A CN 201811554076A CN 109637999 B CN109637999 B CN 109637999B
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Abstract
The invention relates to a silicon-based inductance structure, which relates to a semiconductor integrated circuit, and comprises: a substrate; an inductor coil located on the substrate; the closed metal wire and the closed polysilicon wire are positioned between the substrate and the inductance coil, the closed metal wire is positioned above the closed polysilicon wire, the closed metal wire and the closed polysilicon wire are connected through a through hole, and the closed metal wire is grounded, wherein the closed metal wire comprises a plurality of adjacent wire sections, the closed polysilicon wire comprises a plurality of adjacent wire sections, complementary currents in opposite directions are generated between the adjacent wire sections of the closed metal wire under the change of an inductance magnetic field, and the complementary currents in opposite directions are generated between the adjacent wire sections of the closed polysilicon wire, so that the substrate loss is reduced, and the quality factor of the inductance is effectively improved.
Description
Technical Field
The present invention relates to semiconductor integrated circuits, and more particularly, to a silicon-based inductor structure and layout of a closed line therein.
Background
In semiconductor integrated circuits, with the rapid development of wireless mobile communication technology, the demand for low-cost and high-performance rf devices on chip has been increasing. In order to meet the requirement of high integration, silicon-based inductors such as silicon-based spiral inductors on chips have become key components in communication modules such as voltage-controlled oscillators, low noise amplifiers, mixers, and intermediate frequency filters. An important indicator for measuring inductive performance is the quality factor. The definition is the ratio of the stored energy and the lost energy of the inductor in each oscillation period. Higher quality factor indicates higher inductance efficiency. Factors that affect the quality factor include ohmic losses of the metal coil, parasitic capacitance of the inductor, and losses of the substrate. At low frequency band, the inductance performance is mainly determined by the characteristics of the inductance metal wire (mainly the loss of metal); at high frequency, substrate loss is the main cause of the silicon-based inductive performance, which is mainly due to induced current dissipation generated on the substrate. When the frequency increases, the depth of the electromagnetic wave penetrating the substrate increases, the induced current increases, and the substrate loss becomes large.
At present, there are many ways to reduce the substrate loss at high frequency and improve the quality factor of the inductor, including the MEMS method, which selectively etches silicon material on the top or bottom of the silicon wafer to form a suspended coil; arranging a grid-shaped shielding layer between the inductance coil and the silicon substrate; adding a magnetic material layer; optimizing an inductance layout; a high resistivity substrate material is adopted; forming a thick dielectric layer between the inductance coil and the silicon substrate; thick metal layers or high conductivity copper wires, etc.
However, even these methods can not completely avoid the loss of the substrate, even bring new loss, and have low cost performance and high process difficulty. Therefore, there is a need to develop an inductor structure that can reduce substrate loss and effectively improve quality factor under a conventional process flow.
Disclosure of Invention
The invention provides a silicon-based inductance structure, which comprises: a substrate; an inductor coil located on the substrate; the closed metal wire and the closed polysilicon wire are positioned between the substrate and the inductance coil, the closed metal wire is positioned above the closed polysilicon wire, the closed metal wire and the closed polysilicon wire are connected through a through hole, and the closed metal wire is grounded, wherein the closed metal wire comprises a plurality of adjacent wire segments, the closed polysilicon wire comprises a plurality of adjacent wire segments, complementary currents in opposite directions are generated between the adjacent wire segments of the closed metal wire under the change of an inductance magnetic field, and complementary currents in opposite directions are generated between the adjacent wire segments of the closed polysilicon wire.
Furthermore, the region covered by the closed metal wire has an X-axis direction and a Y-axis direction, the coverage area of the closed metal line comprises a plurality of gaps parallel to the X axis and a plurality of gaps parallel to the Y axis, wherein a gap parallel to the X-axis and a gap parallel to the Y-axis at the center of the coverage area of the closed metal line form a cross-shaped gap, and the covering area of the closed metal wire also comprises a gap forming an acute angle with the X axis and a gap forming an obtuse angle with the X axis, the gap forming an acute angle with the X axis, the gap forming an obtuse angle with the X axis and the gap of the cross structure form a gap of a structure shaped like a Chinese character 'mi', wherein the gap parallel to the X axis forms an alternating "communicating-non-communicating" arrangement with the gap at an acute angle to the X axis or the gap at an obtuse angle to the X axis.
Furthermore, one of two adjacent gaps in the gaps parallel to the X axis is connected to the gap at an acute angle with the X axis or the gap at an obtuse angle with the X axis, and the other is not connected to the gap at an acute angle with the X axis or the gap at an obtuse angle with the X axis, and the metal wire in the coverage area of the closed metal wire is divided into a plurality of metal wire segments by the gaps.
Furthermore, the metal wire of the covering area of the closed metal wire is divided into a plurality of folding surrounding closed wires from 8 directions to the center of the covering area of the closed metal wire by the gap.
Furthermore, the plurality of metal line segments divided by the gaps are connected end to form a closed structure, part of the metal line segments are parallel to the X-axis direction, and part of the metal line segments are parallel to the Y-axis direction.
Further, the gap parallel to the X-axis and the gap parallel to the Y-axis within the coverage area of the closed metal line are process minima.
Furthermore, the metal wire segment is the maximum value of the process.
Further, the closed polysilicon line and the closed metal line have the same shape and the same size.
Further, the closed polysilicon line is stacked in alignment below the closed metal line.
Furthermore, the closed metal wire is any layer of metal wire between the inductance coil and the closed polysilicon wire.
Furthermore, the closed metal wire is a layer of metal wire adjacent to the closed polysilicon wire.
Furthermore, the covering area of the closed metal wire and the covering area of the closed polysilicon wire are the same as the covering area of the inductance coil in shape, and the three are aligned up and down.
The invention also provides a layout of a closed line between a substrate of the silicon-based inductor and an inductance coil, which comprises the following steps: the closed metal wire and the closed polysilicon wire are positioned between the substrate and the inductance coil, the closed metal wire is positioned above the closed polysilicon wire, the closed metal wire and the closed polysilicon wire are connected through a through hole, and the closed metal wire is grounded, wherein the closed metal wire comprises a plurality of adjacent wire segments, the closed polysilicon wire comprises a plurality of adjacent wire segments, complementary currents in opposite directions are generated between the adjacent wire segments of the closed metal wire under the change of an inductance magnetic field, and complementary currents in opposite directions are generated between the adjacent wire segments of the closed polysilicon wire.
Further, the region covered by the closed metal wire has an X-axis direction and a Y-axis direction, the region covered by the closed metal wire includes a plurality of gaps parallel to the X-axis and a plurality of gaps parallel to the Y-axis, wherein a gap parallel to the X-axis and a gap parallel to the Y-axis at the center of the region covered by the closed metal wire form a cross-shaped gap, and the region covered by the closed metal wire further includes a gap at an acute angle with the X-axis and a gap at an obtuse angle with the X-axis, the gap at an acute angle with the X-axis and the gap at an obtuse angle with the X-axis and the gap at the cross-shaped structure together form a "m" -shaped gap, wherein the gap at an acute angle with the X-axis or the gap at an obtuse angle with the X-axis form an alternating "connected-disconnected" structure, one of two adjacent gaps in the gaps parallel to the X axis is connected with the gap forming an acute angle with the X axis or the gap forming an obtuse angle with the X axis, the other one of the two adjacent gaps is not connected with the gap forming an acute angle with the X axis and the gap forming an obtuse angle with the X axis, the metal wire in the coverage area of the closed metal wire is divided into a plurality of metal wire sections by the gaps, the metal wire sections are connected end to form a closed structure, part of the metal wire sections are parallel to the X axis direction, and part of the metal wire sections are parallel to the Y axis direction.
Further, the closed polysilicon line and the closed metal line have the same shape and the same size.
According to the silicon-based inductor structure and the layout of the closed lines in the silicon-based inductor structure, the double-layer closed line structure is added between the substrate of the silicon-based inductor and the inductor coil, wherein each closed line comprises a plurality of adjacent line segments, and under the transformation of the inductor magnetic field, complementary currents in opposite directions are generated between the adjacent line segments in each closed line, so that the electromagnetic fields of the closed lines can be mutually offset, electromagnetic waves are shielded, the loss of the substrate is reduced, the loss caused by the closed metal lines is reduced, and the purpose of reducing the overall loss is achieved.
Drawings
Fig. 1 is a schematic structural diagram of a silicon-based inductor according to an embodiment of the present invention.
Fig. 2 is a schematic sectional view taken along a sectional line a in fig. 1.
Fig. 3 is a schematic flow diagram of an induced current in the closed metal line in fig. 2.
FIG. 4 is a schematic diagram of a simulation circuit.
FIG. 5 is a schematic diagram of a simulation circuit.
FIG. 6 is a simulated Smith chart.
The reference numerals of the main elements in the figures are explained as follows:
100. a substrate; 200. an inductor coil; 300. sealing the metal wire; 400. sealing the polysilicon line; 500. and a through hole.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In an embodiment of the present invention, a silicon-based inductor structure is provided to improve a quality factor of the silicon-based inductor and reduce a loss of the silicon-based inductor. Referring to fig. 1, fig. 1 is a schematic view of a silicon-based inductor structure according to an embodiment of the present invention, as shown in fig. 1, the silicon-based inductor structure of the present invention includes:
And an inductor 200 on the substrate 100. In an embodiment of the present invention, the inductor 200 is a metal wire. A closed metal line 300 and a closed polysilicon (poly) line 400, the closed metal line 300 and the closed polysilicon line 400 are located between the substrate 100 and the inductor coil 200, the closed metal line 300 is located above the closed polysilicon line 400, the closed metal line 300 and the closed polysilicon line 400 are connected through a through hole 500, and the closed metal line 300 is grounded, wherein the closed metal line 300 comprises a plurality of adjacent line segments, the closed polysilicon line 400 comprises a plurality of adjacent line segments, and under the transformation of an inductive magnetic field, complementary currents in opposite directions are generated between the adjacent line segments of the closed metal line 300, and complementary currents in opposite directions are generated between the adjacent line segments of the closed polysilicon line 400.
More specifically, as shown in fig. 1, the through-holes 500 have a plurality of rows.
More specifically, referring to fig. 2, fig. 2 is a schematic sectional view taken along a sectional line a in fig. 1. As shown in fig. 2, i.e., a cross-sectional view of the closed metal line 300. As shown in fig. 2, the area covered by the closed metal line 300 has an X-axis direction and a Y-axis direction, the covered area of the closed metal line 300 includes a plurality of gaps 310 parallel to the X-axis and a plurality of gaps 320 parallel to the Y-axis, wherein a gap 310 parallel to the X-axis and a gap 320 parallel to the Y-axis at the center of the coverage area of the closed metal line 300 constitute a gap of a cross structure, and the coverage area of the closed metal line 300 further includes a gap 330 having an acute angle with the X-axis and a gap 340 having an obtuse angle with the X-axis, the gap 330 at an acute angle to the X-axis and the gap 340 at an obtuse angle to the X-axis together with the gap of the "cross" structure form a gap of the "m" structure, wherein gaps 310 parallel to the X-axis are in an alternating "connected-disconnected" configuration with gaps 330 at an acute angle to the X-axis or gaps 340 at an obtuse angle to the X-axis. Specifically, one of two adjacent gaps 310 parallel to the X-axis is connected to the gap 330 at an acute angle with respect to the X-axis or the gap 340 at an obtuse angle with respect to the X-axis, and the other is not connected to the gap 330 at an acute angle with respect to the X-axis or the gap 340 at an obtuse angle with respect to the X-axis, and the metal line in the coverage area of the closed metal line 300 is divided into a plurality of metal line segments 350 by the gaps (310, 320, 330, and 340), as shown in the blank area in fig. 2. That is, the metal line of the coverage area of the closed metal line 300 is divided by the gaps (310, 320, 330 and 340) to form a multi-fold surrounding closed line from the 8 directions around to the center of the coverage area of the closed metal line 300. More specifically, as shown in fig. 2, a plurality of metal line segments 350 divided by gaps (310, 320, 330, and 340) are connected end to form a closed structure, some of the metal line segments 350 are parallel to the X-axis direction, and some of the metal line segments 350 are parallel to the Y-axis direction.
Referring to fig. 3 again, fig. 3 is a schematic flow diagram of the induced current in the closed metal line in fig. 2. As shown in fig. 3, when the induced current flows on the closed metal line 300 under the transformation of the inductive magnetic field, the current flowing directions on adjacent line segments are just opposite, so that the electromagnetic fields thereof cancel each other out, thereby achieving the purpose of shielding electromagnetic waves, reducing the loss of the substrate, and reducing the loss caused by the closed metal line 300 itself, so as to achieve the purpose of reducing the overall loss. Fig. 3 is a schematic diagram, the blank part in fig. 3 is the gap in fig. 2, and the solid line part is the metal line in fig. 2, i.e. the width of the metal line in fig. 2 is reduced, and the width of the gap is enlarged to clearly show the flow direction of the current.
As shown in fig. 2, in one embodiment of the present invention, the gap 310 parallel to the X-axis and the gap 320 parallel to the Y-axis within the coverage area of the closed metal line 300 are process minima. The metal line segment 350 is the process maximum. Thus, the area of the closed metal line 300 is maximized and the gap under the process conditions is minimized, thereby minimizing the amount of electromagnetic waves emitted from the inductor that can penetrate through the closed metal line 300 and thus minimizing the eddy current loss induced on the substrate.
In an embodiment of the present invention, the closed polysilicon line 400 and the closed metal line 300 have the same shape and the same size to form a double-layer closed line structure. Preferably, the closed polysilicon line 400 and the closed metal line 300 have the same shape and the same size, and the closed polysilicon line 400 and the closed metal line 300 are stacked in an up-down alignment. The double-layer closed line effectively plugs the penetrated electromagnetic wave, thereby not only avoiding the continuous formation of induced current on the substrate and further reducing the loss of the substrate, but also avoiding or reducing the eddy current loss caused by the induced current generated by the magnetic field in the closed polycrystalline silicon line 400 and the closed metal line 300, and further achieving the purpose of improving the quality factor of the inductance device.
In an embodiment of the invention, the closed metal line 300 is a metal line layer adjacent to the closed polysilicon line 400, such as to reduce the length of the via hole for further reducing the loss, and to increase the via hole density more easily, so as to have a better effect of blocking electromagnetic waves emitted by the inductor. Of course, in other embodiments of the present invention, the closed metal line 300 may be any layer of metal line between the inductor 200 and the closed polysilicon line 400.
In an embodiment of the present invention, the covered area of the closed metal line 300 and the covered area of the closed polysilicon line 400 are the same as the covered area of the inductor 200, and the three are aligned up and down.
The technical node of the silicon-based inductor is 28nm or less.
Further, in an embodiment of the present invention, there is also provided a layout of a seal line between a substrate of a silicon-based inductor and an inductor coil, and particularly, referring to fig. 2, the seal line includes: a closed metal line 300 and a closed polysilicon (poly) line 400, the closed metal line 300 and the closed polysilicon line 400 are located between the substrate 100 and the inductor coil 200, the closed metal line 300 is located on the closed polysilicon line 400, the closed metal line 300 and the closed polysilicon line 400 are connected through a through hole 500, the closed metal line 300 is grounded, wherein the closed metal line 300 comprises a plurality of adjacent line segments, the closed polysilicon line 400 comprises a plurality of adjacent line segments, complementary currents in opposite directions are generated between the adjacent line segments of the closed metal line 300 under the change of an inductive magnetic field, and complementary currents in opposite directions are generated between the adjacent line segments of the closed polysilicon line 400.
As shown in fig. 2, the region covered by the closed metal line 300 has an X-axis direction and a Y-axis direction, the covered region of the closed metal line 300 includes a plurality of gaps 310 parallel to the X-axis and a plurality of gaps 320 parallel to the Y-axis, wherein a gap 310 parallel to the X-axis and a gap 320 parallel to the Y-axis at the center of the covered region of the closed metal line 300 constitute a gap of a cross structure, and the covered region of the closed metal line 300 further includes a gap 330 at an acute angle to the X-axis and a gap 340 at an obtuse angle to the X-axis, the gap 330 at an acute angle to the X-axis and the gap 340 at an obtuse angle to the X-axis together constitute a gap of a "m" structure with the gap of the cross structure, wherein the gap 310 parallel to the X-axis forms an alternating "connected-disconnected" structure with the gap 330 at an acute angle to the X-axis or the gap 340 at an obtuse angle to the X-axis, specifically, one of two adjacent gaps 310 parallel to the X-axis is connected to the gap 330 at an acute angle with respect to the X-axis or the gap 340 at an obtuse angle with respect to the X-axis, and the other is not connected to the gap 330 at an acute angle with respect to the X-axis or the gap 340 at an obtuse angle with respect to the X-axis, and the metal line in the coverage area of the closed metal line 300 is divided into a plurality of metal line segments 350 by the gaps (310, 320, 330, and 340), as shown in the blank area in fig. 2. That is, the metal line of the coverage area of the closed metal line 300 is divided by the gaps (310, 320, 330 and 340) to form a multi-fold surrounding closed line from the 8 directions around to the center of the coverage area of the closed metal line 300. More specifically, as shown in fig. 2, a plurality of metal line segments 350 divided by gaps (310, 320, 330, and 340) are connected end to form a closed structure, some of the metal line segments 350 are parallel to the X-axis direction, and some of the metal line segments 350 are parallel to the Y-axis direction.
As shown in fig. 2, in one embodiment of the present invention, the gap 310 parallel to the X-axis and the gap 320 parallel to the Y-axis within the coverage area of the closed metal line 300 are process minima. The metal line segment 350 is the process maximum.
In an embodiment of the present invention, the closed polysilicon line 400 and the closed metal line 300 have the same shape and the same size to form a double-layer closed line structure. Preferably, the closed polysilicon line 400 and the closed metal line 300 have the same shape and the same size, and the closed polysilicon line 400 and the closed metal line 300 are stacked in an up-down alignment. The double-layer closed line effectively plugs the penetrated electromagnetic wave, thereby not only avoiding the continuous formation of induced current on the substrate and further reducing the loss of the substrate, but also avoiding or reducing the eddy current loss caused by the induced current generated by the magnetic field in the closed polycrystalline silicon line 400 and the closed metal line 300, and further achieving the purpose of improving the quality factor of the inductance device.
In an embodiment of the present invention, the closed metal line 300 is a layer of metal line adjacent to the closed polysilicon line 400, which can reduce the length of the via to further reduce the loss. Of course, in other embodiments of the present invention, the closed metal line 300 may be any layer of metal line between the inductor 200 and the closed polysilicon line 400.
In an embodiment of the present invention, the covered area of the closed metal line 300 and the covered area of the closed polysilicon line 400 are the same as the covered area of the inductor 200, and the three are aligned up and down.
In order to verify the effect of the closed line between the substrate of the silicon-based inductor and the inductance coil on improving the quality factor of the inductor, the inductor is simulated under a JAZZ 0.25um CMOS radio frequency process platform. The simulation working voltage is 2.5V, and the simulation layout and the parameter items are as follows: the closed wire positioned between the substrate of the silicon-based inductor and the inductor coil is added between the substrate of the inductor and the inductor metal wire, the closed wire positioned between the substrate of the silicon-based inductor and the inductor coil consists of an M1 metal layer and a (Poly) polycrystalline silicon layer, 1 closed wire is respectively constructed, and the closed wire is grounded through M1. The Metal wire of the inductor adopts a top Metal (Metal4) layer, the wire width is 2 microns, and the space is 4 microns; in the closed line between the substrate of the silicon-based inductor and the inductor coil, the width of the closed line of a metal layer (M1) is 4 microns, and the distance between every two circles of lines is 0.5 micron; the line width of a closed line of the Poly polysilicon layer is 4 microns, and the line spacing is 0.5 micron; the two closed lines are connected by through holes, and the distance between the through holes is the minimum value of the process.
Simulation analysis is performed with the inductor structure of the present invention, the schematic diagram of the simulation circuit is shown in fig. 4, the simulation tool uses Cadence spectrum, the simulation object is 5 nanometer share (nH) inductor, the operating frequency is 3.5 gigahertz (GHz), and the inductor model is 410 in fig. 4.
In the simulation inductance model, L is an ideal inductance, RS is an inductance internal resistance loss, CP is an inductance parallel capacitance, RP is an inductance parallel resistance, Cox is an inductance-substrate capacitance, RI is a substrate loss, and C1 is a substrate capacitance. Wherein L, Rs, Cp, Rp, CoX, R1 and C1 are 499 nanohenries, 8.9 ohm, 18fF, 2.9 kilo-ohm, 24fF, 160 ohm and 70fF respectively.
Firstly, simulating the influence of the mutual inductance effect caused by the substrate image current on the quality factor of the inductance model, wherein a specific simulation circuit is shown in fig. 4.
Then, after the closed wire between the substrate of the silicon-based inductor and the inductor coil is adopted in simulation, the mutual inductance influence generated by the substrate mirror current is reduced, and the quality factor of the inductor is obtained. As shown in fig. 5, the simulation result is an inductance equivalent impedance Z0 represented by a smith chart, and then the corresponding inductance L and quality factor Q are obtained by converting the calculation formulas (1) and (2).
Wherein f is the working frequency, image (Z0) is the imaginary part of Zo, and Real (Z0) is the Real part of Z0.
Fig. 6 is a smith chart of simulation, in which curve 1 is an impedance curve of an equivalent inductor load when a mutual inductance effect of the mirror current exists, and curve 2 is an impedance curve of an equivalent inductor load after the mutual inductance effect of the mirror current is eliminated. It can be seen that the quality factor of the inductor after the closed wire between the substrate of the silicon-based inductor and the inductor coil is adopted is obviously higher than the quality factor of the inductor without the closed wire between the substrate of the silicon-based inductor and the inductor coil.
In summary, a double-layer closed line structure is added between the substrate of the silicon-based inductor and the inductor coil, wherein each closed line comprises a plurality of adjacent line segments, and under the transformation of the inductor magnetic field, complementary currents in opposite directions are generated between the adjacent line segments in each closed line, so that the electromagnetic fields of the closed lines can be mutually offset, thereby not only shielding electromagnetic waves and reducing the loss of the substrate, but also reducing the loss caused by the closed metal lines, and further achieving the purpose of reducing the overall loss.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (14)
1. A silicon-based inductor structure, comprising:
a substrate;
an inductor coil located on the substrate;
a closed metal wire and a closed polysilicon wire, the closed metal wire and the closed polysilicon wire are located between the substrate and the inductance coil, the closed metal wire is located above the closed polysilicon wire, the closed metal wire and the closed polysilicon wire are connected through a through hole and the closed metal wire is grounded, wherein the closed metal wire comprises a plurality of adjacent wire segments, the closed polysilicon wire comprises a plurality of adjacent wire segments, complementary currents in opposite directions are generated between the adjacent wire segments of the closed metal wire under the change of an inductance magnetic field, the complementary currents in opposite directions are generated between the adjacent wire segments of the closed polysilicon wire, wherein the region covered by the closed metal wire has an X-axis direction and a Y-axis direction, the region covered by the closed metal wire comprises a plurality of gaps parallel to the X-axis and a plurality of gaps parallel to the Y-axis, the gap parallel to the X axis and the gap parallel to the Y axis at the center of the covering area of the closed metal wire form a cross-shaped gap, the covering area of the closed metal wire also comprises a gap forming an acute angle with the X axis and a gap forming an obtuse angle with the X axis, the gap forming an acute angle with the X axis and the gap forming an obtuse angle with the X axis and the gap forming a cross-shaped structure together form a gap of a meter-shaped structure, and the gap parallel to the X axis and the gap forming an acute angle with the X axis or the gap forming an obtuse angle with the X axis form an alternate 'communication-non-communication' structure.
2. The silicon-based inductor structure according to claim 1, wherein one of two adjacent gaps of the gaps parallel to the X-axis is connected to the gap at an acute angle or the gap at an obtuse angle, and the other is not connected to the gaps at an acute angle and the gaps at an obtuse angle, and the metal line in the coverage area of the closed metal line is divided into a plurality of metal line segments by the gaps.
3. The silicon-based inductor structure as claimed in claim 2, wherein the metal lines in the covered area of the closed metal lines are divided by the gaps into a plurality of surrounding closed lines from 8 directions around the metal lines toward the center of the covered area of the closed metal lines.
4. The silicon-based inductor structure according to claim 3, wherein the plurality of metal line segments divided by the gap are connected end to form a closed structure, a portion of the metal line segments are parallel to an X-axis direction, and a portion of the metal line segments are parallel to a Y-axis direction.
5. The silicon-based inductor structure of claim 1, wherein the gap parallel to the X-axis and the gap parallel to the Y-axis within a footprint of the closed metal line are process minima.
6. The silicon-based inductor structure of claim 2, wherein the metal line segments are process maxima.
7. The silicon-based inductor structure according to any one of claims 1-6, wherein the closed polysilicon lines and the closed metal lines are the same shape and the same size.
8. The silicon-based inductor structure of claim 7, wherein the closed polysilicon line and the closed metal line are stacked in an aligned manner.
9. The silicon-based inductor structure of claim 1, wherein the closed metal line is any layer of metal line between the inductor coil and the closed polysilicon line.
10. The silicon-based inductor structure of claim 9, wherein the closed metal line is a layer of metal line adjacent to the closed polysilicon line.
11. The silicon-based inductor structure according to claim 9, wherein the cap region of the closed metal line and the cap region of the closed polysilicon line have the same shape as the cap region of the inductor coil, and are aligned above and below the inductor coil.
12. A layout of a closed line between a substrate of a silicon-based inductor and an inductor coil, comprising: a closed metal wire and a closed polysilicon wire, the closed metal wire and the closed polysilicon wire are located between the substrate and the inductance coil, the closed metal wire is located above the closed polysilicon wire, the closed metal wire and the closed polysilicon wire are connected through a through hole and the closed metal wire is grounded, wherein the closed metal wire comprises a plurality of adjacent wire segments, the closed polysilicon wire comprises a plurality of adjacent wire segments, complementary currents in opposite directions are generated between the adjacent wire segments of the closed metal wire under the change of an inductance magnetic field, the complementary currents in opposite directions are generated between the adjacent wire segments of the closed polysilicon wire, wherein the region covered by the closed metal wire has an X-axis direction and a Y-axis direction, the region covered by the closed metal wire comprises a plurality of gaps parallel to the X-axis and a plurality of gaps parallel to the Y-axis, the gap parallel to the X axis and the gap parallel to the Y axis at the center of the covering area of the closed metal wire form a cross-shaped gap, the covering area of the closed metal wire also comprises a gap forming an acute angle with the X axis and a gap forming an obtuse angle with the X axis, the gap forming an acute angle with the X axis and the gap forming an obtuse angle with the X axis and the gap forming a cross-shaped structure together form a gap of a meter-shaped structure, and the gap parallel to the X axis and the gap forming an acute angle with the X axis or the gap forming an obtuse angle with the X axis form an alternate 'communication-non-communication' structure.
13. The layout of the closed line between the substrate of the silicon-based inductor and the inductor coil according to claim 12, wherein one of two adjacent gaps in the gap parallel to the X-axis is connected to the gap at an acute angle with the X-axis or the gap at an obtuse angle with the X-axis, and the other is not connected to the gap at an acute angle with the X-axis or the gap at an obtuse angle with the X-axis, the metal line in the coverage area of the closed metal line is divided into a plurality of metal line segments by the gaps, the metal line segments are connected with each other end to form a closed structure, a part of the metal line segments are parallel to the X-axis direction, and a part of the metal line segments are parallel to the Y-axis direction.
14. The layout of the closed wire between the substrate of the silicon-based inductor and the inductor coil according to claim 13, wherein the closed polysilicon wire and the closed metal wire have the same shape and the same size.
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| CN201811554076.3A CN109637999B (en) | 2018-12-19 | 2018-12-19 | Silicon-based inductor structure and layout of closed line therein |
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| CN201811554076.3A CN109637999B (en) | 2018-12-19 | 2018-12-19 | Silicon-based inductor structure and layout of closed line therein |
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| DE69623425T2 (en) * | 1995-12-21 | 2003-04-30 | Agilent Technologies Inc | Structure of a choke coil |
| CN1486497A (en) * | 2000-12-19 | 2004-03-31 | �ź㴫 | Planar inductor with segmented conductive plane |
| CN1979851A (en) * | 2005-11-29 | 2007-06-13 | 上海华虹Nec电子有限公司 | Domain structure of increasing induction quality factor |
| CN1979852A (en) * | 2005-12-01 | 2007-06-13 | 上海华虹Nec电子有限公司 | Domain structure of increwing induction quality factor |
| CN105225812A (en) * | 2014-06-20 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | Pattern earth shield structure and inductor |
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| US20080029854A1 (en) * | 2006-08-03 | 2008-02-07 | United Microelectronics Corp. | Conductive shielding pattern and semiconductor structure with inductor device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69623425T2 (en) * | 1995-12-21 | 2003-04-30 | Agilent Technologies Inc | Structure of a choke coil |
| CN1486497A (en) * | 2000-12-19 | 2004-03-31 | �ź㴫 | Planar inductor with segmented conductive plane |
| CN1979851A (en) * | 2005-11-29 | 2007-06-13 | 上海华虹Nec电子有限公司 | Domain structure of increasing induction quality factor |
| CN1979852A (en) * | 2005-12-01 | 2007-06-13 | 上海华虹Nec电子有限公司 | Domain structure of increwing induction quality factor |
| CN105225812A (en) * | 2014-06-20 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | Pattern earth shield structure and inductor |
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