CN109632899B - Method for manufacturing precisely controllable nanopore - Google Patents

Method for manufacturing precisely controllable nanopore Download PDF

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CN109632899B
CN109632899B CN201811301885.3A CN201811301885A CN109632899B CN 109632899 B CN109632899 B CN 109632899B CN 201811301885 A CN201811301885 A CN 201811301885A CN 109632899 B CN109632899 B CN 109632899B
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袁志山
雷鑫
王成勇
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Guangdong University of Technology
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Abstract

The invention relates to the technical field of nano processing, in particular to a method for manufacturing a precisely controllable nano hole, which comprises the following steps: installing a first electrode wire and a second electrode wire, wherein one end of the first electrode wire is inserted into the liquid cavity, and one end of the second electrode wire is contacted with the position of the chip where the nanopore needs to be formed; processing a groove-shaped hydrophilic structure on the surface of the second wire electrode, and wetting the surface of the second wire electrode by adopting a salt solution; the other end of the first wire electrode and the other end of the second wire electrode are electrified to apply voltage at the two ends of the chip; when the aperture of the nano-pore is continuously enlarged to the required aperture, immediately stopping applying the voltage; the chip was cleaned and dried. The invention can not only realize the accurate positioning of the nano-pore, but also realize the accurate manufacturing of the nano-pore with the required aperture, has simple and efficient manufacturing method and wide application range, and solves the problems that the nano-pore manufactured by electric breakdown cannot be accurately positioned and the aperture manufactured by focused ion beams is unstable.

Description

Method for manufacturing precisely controllable nanopore
Technical Field
The invention relates to the technical field of nano processing, in particular to a method for manufacturing a precisely controllable nano hole.
Background
Nanopore technologies can be broadly divided into two categories, depending on the constituent materials of the nanopore. One is "biological nanopores" associated with biological materials and the other is "solid-state nanopores" associated with semiconductor materials. The most common DNA sequencing method used in conjunction with biological and solid-state nanopores is to detect changes in ionic current through the nanopore during DNA transport and to identify four types of nucleotides from changes in particle current. Since the structural difference of each nucleotide molecule is small, in order to extract the change in ion current generated by four types of nucleotides, the diameter of the nanopore must be on the same order of magnitude as the diameter of DNA; in addition to this, in order to spatially distinguish each nucleotide in the DNA, the nanopore's capsaicinoid must also be on the same order of magnitude as the distance between the nucleotides.
While biological nanopores offer greater sensitivity and lower noise characteristics, they are very small molecules due to their fragile lipid bilayer structure, and are limited to use under very specific operating conditions, and by their requirement; while solid state nanopores offer higher durability, better thermodynamic performance, more flexibility in size and shape adjustment capabilities, facilitating mass production and reducing production costs. The surface of the film is usually perforated by using a focused ion beam or an electron beam, and the aperture and the pore shape can be changed by adjusting beam parameters or subsequently using a Scanning Electron Microscope (SEM) or a Transmission Electron Microscope (TEM) to shrink, enlarge and change the pore shape. However, due to the variety of ion beams, uncertainty in the parameters used, it is difficult to precisely control the electron beam and ion beam to form a nanopore of a desired aperture.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a method for manufacturing a precisely controllable nanopore, which can realize precise positioning of the nanopore and precise manufacturing of the nanopore with required aperture, and has the advantages of simple and efficient manufacturing method and wide application range.
In order to solve the technical problems, the invention adopts the technical scheme that:
providing a method for manufacturing a precisely controllable nanopore, wherein the nanopore is arranged on a chip, the chip is fixed in a liquid pool, and the liquid pool is provided with a liquid cavity filled with a salt solution; the manufacturing method comprises the following steps:
s10, mounting a first electrode wire and a second electrode wire, wherein one end of the first electrode wire is inserted into the liquid cavity, and one end of the second electrode wire is in contact with a position on the chip where a nano hole is required to be formed;
s20, processing a groove-shaped hydrophilic structure on the surface of the second wire electrode, and wetting the surface of the second wire electrode by adopting a salt solution;
s30, electrifying the other end of the first wire electrode and the other end of the second wire electrode to apply voltage to two ends of the chip;
s40, stopping applying voltage immediately when the aperture of the nanopore is continuously enlarged to the required aperture;
s50, cleaning the chip and drying.
According to the method for manufacturing the precisely controllable nano hole, the second electrode wire is moved to the position where the nano hole is required to be formed for processing, so that the precise positioning of the nano hole is realized; the pore diameter of the nanopore is controlled by monitoring the magnitude of the real-time current, so that the accurate manufacturing of the nanopore with the required pore diameter is realized; the invention solves the problems that the nanopore manufactured by the electric breakdown cannot be accurately positioned and the aperture manufactured by the focused ion beam is unstable.
Preferably, a thin film structure is laid on the surface of the chip, the thin film structure is selected from one of a nanoscale single-layer thin film, a micron-sized multilayer composite thin film and a nanoscale multilayer composite thin film, and the thickness of the thin film structure is 5 nm-100 nm. The invention can prepare nanometer holes on a meter-level single-layer film, a micron-level multilayer composite film and a nanometer-level multilayer composite film, and has wide application range.
Preferably, the film structure is selected from one of a silicon nitride film, a silicon oxide film or a silicon nitride/silicon oxide/silicon nitride three-layer film.
Preferably, in step S10, the first electrode wire and the second electrode wire are selected from one or more of silver, copper, gold, aluminum and tungsten, and the cross-sectional diameter of the first electrode wire and the second electrode wire is 100nm to 10 μm. The silver, copper, gold, aluminum, tungsten and the alloy thereof have good conductivity, and are convenient for applying subsequent voltage.
Preferably, in step S20, the surface of the second electrode wire is processed by one or more selected from laser processing, focused ion beam processing, and transmission electron microscope; the hydrophilic structure is selected from one or more of triangle, diamond and square. The arrangement of the hydrophilic structure is convenient for the salt solution to infiltrate on the surface of the second electrode wire.
Preferably, in step S20, the salt solution is selected from one or more of a sodium chloride solution, a potassium chloride solution, a lithium chloride solution, a calcium chloride solution, and a lanthanum chloride solution; the pH of the salt solution is 6.0-8.0, and the buffer solution for adjusting the pH of the salt solution is selected from one of Tris-HCl buffer solution, HEPES buffer solution and PBS buffer solution. The buffer solution was added dropwise to the salt solution to adjust the pH of the salt solution.
Preferably, in step S30, the voltage is a constant voltage, a pulse voltage at the same time interval or a pulse voltage at different time intervals, and the voltage is 0.1V to 30V.
Preferably, in step S40, real-time currents flowing through the first wire electrode and the second wire electrode are obtained, and the morphology of the nanopore is determined by the change of the real-time currents:
a. the real-time current remains unchanged, and the nanopore is not formed;
b. the current is mutated in real time, and the nanopore is formed;
c. the real-time current is gradually increased, and the pore diameter of the nanopore is continuously increased;
d. the real-time current is increased to the set current, and the required nanopore machining is completed.
Preferably, in step S50, the chip is washed with degassed deionized water for at least 5 times, and dried by suction of a getter.
Preferably, one end of the first wire electrode, which is far away from the chip, and one end of the second wire electrode, which is far away from the chip, are connected with a current amplifier, and the current amplifier is connected with a personal computer through a USB interface.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the method for manufacturing the precisely controllable nano hole, the second electrode wire is moved to the position where the nano hole is required to be formed for processing, so that the precise positioning of the nano hole is realized; the pore diameter of the nanopore is controlled by monitoring the magnitude of the real-time current, so that the accurate manufacturing of the nanopore with the required pore diameter is realized; the manufacturing method is simple and efficient, and solves the problems that the nanopore manufactured by electric breakdown cannot be accurately positioned and the aperture manufactured by the focused ion beam is unstable.
(2) The invention can prepare the nanometer hole on the silicon nitride film, the silicon oxide film and other micron-sized or nanometer-sized single-layer films, or the silicon nitride/silicon nitride three-layer films and other micron-sized or nanometer-sized multilayer composite films, and has wide application range.
Drawings
Fig. 1 is a schematic flow diagram of a precisely controllable nanopore fabrication method of the present invention.
Fig. 2 is a schematic structural view of a first wire electrode according to the present invention.
Fig. 3 is a schematic structural view of a second wire electrode according to the present invention.
Fig. 4 is a schematic view of a second electrode wire according to the present invention after being wetted.
Fig. 5 is a schematic view of the state of the present invention in the fabrication of precisely controllable nanopores.
FIG. 6 is a schematic diagram of the state of the present invention during precisely controlled nanopore formation.
In the drawings: 1-chip; 2-a liquid pool; 21-a liquid chamber; 3-a first wire electrode; 4-a second wire electrode; 41-hydrophilic structure; 5-a thin film structure; 6-nanopore.
Detailed Description
The present invention will be further described with reference to the following embodiments. Wherein the showings are for the purpose of illustration only and are shown by way of illustration only and not in actual form, and are not to be construed as limiting the present patent; to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
Example one
Fig. 1 shows an embodiment of the method for manufacturing a precisely controllable nanopore 6 according to the present invention, wherein the nanopore 6 is opened on a chip 1, the chip 1 is fixed in a liquid pool 2, and the liquid pool 2 is provided with a liquid cavity 21 filled with a salt solution; the manufacturing method comprises the following steps:
s10, installing a first electrode wire 3 and a second electrode wire 4, wherein one end of the first electrode wire 3 is inserted into the liquid cavity 21, and one end of the second electrode wire 4 is in contact with the position, on the chip 1, of the nanopore 6;
s20, processing a groove-shaped hydrophilic structure 41 on the surface of the second wire electrode 4, and wetting the surface of the second wire electrode 4 by adopting a salt solution;
s30, electrifying the other end of the first wire electrode 3 and the other end of the second wire electrode 4 to apply voltage to two ends of the chip 1;
s40, stopping applying voltage immediately when the aperture of the nanopore 6 is continuously enlarged to the required aperture;
s50, cleaning the chip 1 and drying.
The surface of the chip 1 of the embodiment is laid with a thin film structure 5, the thin film structure 5 is selected from one of a nano-scale single-layer thin film, a micro-scale multilayer composite thin film and a nano-scale multilayer composite thin film, and the thickness of the thin film structure 5 is 5 nm-100 nm. The thin film structure 5 of the present embodiment is selected from one of a silicon nitride thin film, a silicon oxide thin film, or a silicon nitride/silicon oxide/silicon nitride triple-layer thin film. The invention can prepare the nanometer hole 6 on a silicon nitride film, a silicon oxide film and other micron-sized or nanometer-sized single-layer films, or silicon nitride/silicon nitride three-layer films and other micron-sized or nanometer-sized multilayer composite films, and has wide application range. In addition, in this embodiment, the end of the first wire electrode 3 away from the chip 1 and the end of the second wire electrode 4 away from the chip 1 are connected with a current amplifier, and the current amplifier is connected with a personal computer through a USB interface, so that the machining process of the nanopore 6 can be conveniently operated by the personal computer.
In step S10, the first wire electrode 3 and the second wire electrode 4 are one or more of silver, copper, gold, aluminum, and tungsten, and the cross-sectional diameters of the first wire electrode 3 and the second wire electrode 4 are 100nm to 10 μm. The silver, copper, gold, aluminum, tungsten and the alloy thereof have good conductivity, and are convenient for applying subsequent voltage.
In step S20, the surface of the second wire electrode 4 is processed by one or more selected from laser processing, focused ion beam processing, and transmission electron microscope; the hydrophilic structures 41 are selected from one or more combinations of triangles, diamonds, squares. The hydrophilic structure 41 is arranged to facilitate the wetting of the salt solution on the surface of the second wire electrode 4.
In step S20, the salt solution is one or more selected from a sodium chloride solution, a potassium chloride solution, a lithium chloride solution, a calcium chloride solution, and a lanthanum chloride solution; the pH of the salt solution is 6.0-8.0, and the buffer solution for adjusting the pH of the salt solution is selected from one of Tris-HCl buffer solution, HEPES buffer solution and PBS buffer solution. The buffer solution was added dropwise to the salt solution to adjust the pH of the salt solution.
In step S30, the voltage is a constant voltage, a pulse voltage at the same time interval or a pulse voltage at different time intervals, and the voltage is 0.1V to 30V.
In step S40, the real-time current flowing through the first wire electrode 3 and the second wire electrode 4 is obtained, and the form of the nanopore 6 is determined by the change of the real-time current:
a. the real-time current remains unchanged, and the nanopore 6 is not formed;
b. the real-time current is mutated, and a nanopore 6 is formed;
c. the real-time current is gradually increased, and the aperture of the nanopore 6 is continuously increased;
d. the real-time current is increased to the set current and the desired nanopore 6 machining is completed.
In step S50, the chip 1 is washed with degassed deionized water for at least 5 times, and the chip 1 is dried by suction of an aspirator.
Example two
Fig. 2 to 6 show a second embodiment of the method for manufacturing a precisely controllable nanopore according to the present invention, which is an application example of the first embodiment, and specifically includes the following steps:
firstly, step S10 is executed, a first wire electrode 3 and a second wire electrode 4 are installed, the structures of the first wire electrode 3 and the second wire electrode 4 are shown in fig. 2 to fig. 3, one end of the first wire electrode 3 is inserted into the liquid cavity 21, and one end of the second wire electrode 4 contacts the position of the chip 1 where the nanopore 6 needs to be formed; in the present embodiment, the first wire electrode 3 and the second wire electrode 4 are made of silver having good conductivity, and the cross-sectional diameters of the first wire electrode 3 and the second wire electrode 4 are 1 μm.
Then, step S20 is executed to machine a groove-shaped hydrophilic structure 41 on the surface of the second wire electrode 4, in this embodiment, the surface machining mode of the second wire electrode 4 is focused ion beam machining, and the hydrophilic structure 41 is a triangular structure. Wetting the surface of the second wire electrode 4 by using a salt solution, wherein the salt solution is a sodium chloride salt solution, the pH value of the salt solution is 7.5, and the buffer solution is a HEPES buffer solution; as shown in fig. 3-4. In specific implementation, 1M sodium chloride solution is prepared, 20mM HEPES buffer solution is used for adjusting the pH value to 7.5, the prepared salt solution is sucked by a liquid transfer gun and is dripped on the surface of the second electrode wire 4 which is vertically placed, so that the second electrode wire is completely wetted.
Next, step S30 and step S40 are performed, and the other end of the first wire electrode 3 and the other end of the second wire electrode 4 are energized to apply a voltage across the chip 1, as shown in fig. 5. In the implementation of the embodiment, the two ends of the first wire electrode 3 and the second wire electrode 4 are connected with a current amplifier, and the current amplifier is connected with a personal computer through a USB interface; applying constant 5V voltage to two ends of the chip 1 by using a current amplifier to obtain real-time current, after a period of time, making the real-time current suddenly change to form the nanopore 6, continuously applying the voltage, gradually increasing the obtained real-time current to represent that the pore diameter of the nanopore 6 is continuously enlarged, and using a formula
Figure BDA0001852604900000061
The conductance of the required aperture can be derived, the voltage is constant at 5V, and the required current can be calculated; when the current is increased to the required current, the voltage is immediately stopped, and the nanopore 6 with the required pore diameter can be obtained, as shown in fig. 6.
Finally, step S50 is performed to wash and dry the chip 1. In the implementation of this embodiment, the chip 1 is carefully taken out of the liquid pool 2 by using clean teflon round-head tweezers and put into a clean beaker; adding 50 ml of degassed deionized water to the beaker using a clean glass pipette to rinse the chip 1, suck out the water, and repeat at least 5 times; carefully remove the chip 1 from the beaker using the clean teflon blunt forceps; slightly sucking the suction force to the edge of the paper by using an aspirator to dry the paper; after the chip 1 is completely dried, it is stored in a clean self-adsorbing cassette.
Through the steps, the invention provides the method for manufacturing the precisely controllable nanopore 6, which not only can realize the precise positioning of the nanopore 6, but also can realize the precise manufacturing of the nanopore 6 with the required aperture, has simple and efficient manufacturing method and wide application range, and solves the problems that the nanopore 6 manufactured by electric breakdown cannot be precisely positioned and the aperture manufactured by a focused ion beam is unstable.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.

Claims (8)

1. A method for manufacturing a precisely controllable nanopore, wherein the nanopore is opened on a chip, the chip is fixed in a liquid pool, and the liquid pool is provided with a liquid cavity filled with a salt solution; characterized in that the manufacturing method comprises the following steps:
s10, mounting a first electrode wire and a second electrode wire, wherein one end of the first electrode wire is inserted into the liquid cavity, and one end of the second electrode wire is in contact with a position on the chip where a nano hole is required to be formed;
s20, processing a groove-shaped hydrophilic structure on the surface of the second wire electrode, and wetting the surface of the second wire electrode by adopting a salt solution; processing the surface of the second electrode wire in one or more combinations selected from laser processing, focused ion beam processing and transmission electron microscope; the hydrophilic structure is selected from one or more of triangle, diamond and square;
s30, electrifying the other end of the first wire electrode and the other end of the second wire electrode to apply voltage to two ends of the chip; s40, stopping applying voltage immediately when the aperture of the nanopore is continuously enlarged to the required aperture; the method comprises the following steps of obtaining real-time current flowing through a first electrode wire and a second electrode wire, and judging the form of a nanopore through the change of the real-time current:
a. the real-time current remains unchanged, and the nanopore is not formed;
b. the current is mutated in real time, and the nanopore is formed;
c. the real-time current is gradually increased, and the pore diameter of the nanopore is continuously increased;
d. increasing the real-time current to a set current, and finishing the machining of the required nano hole;
s50, cleaning the chip and drying.
2. The method of claim 1, wherein the surface of the chip is coated with a thin film structure, the thin film structure is selected from one of a nanoscale single-layer thin film, a micron-scale multi-layer composite thin film, and a nanoscale multi-layer composite thin film, and the thickness of the thin film structure is 5nm to 100 nm.
3. The method of claim 2, wherein the thin film structure is selected from one of a silicon nitride thin film, a silicon oxide thin film, or a silicon nitride/silicon oxide/silicon nitride triple thin film.
4. The method for manufacturing precisely controllable nanopores according to claim 1, wherein in step S10, the first electrode wire and the second electrode wire are selected from one or more of silver, copper, gold, aluminum and tungsten, and the cross-sectional diameter of the first electrode wire and the second electrode wire is 100nm to 10 μm.
5. The precisely controllable nanopore manufacturing method according to claim 1, wherein in step S20, the salt solution is selected from one or more of a sodium chloride solution, a potassium chloride solution, a lithium chloride solution, a calcium chloride solution, and a lanthanum chloride solution; the pH of the salt solution is 6.0-8.0, and the buffer solution for adjusting the pH of the salt solution is selected from one of Tris-HCl buffer solution, HEPES buffer solution and PBS buffer solution.
6. The method for manufacturing precisely controllable nanopores according to claim 1, wherein the voltage is a constant voltage, a pulse voltage at the same time interval or a pulse voltage at different time intervals, and the voltage is 0.1V to 30V in step S30.
7. The method of claim 1, wherein the cleaning of the chip is performed at least 5 times by using degassed DI water, and the drying of the chip is performed by using the suction force of the aspirator in step S50.
8. The method for manufacturing the nanopore according to any one of claims 1 to 7, wherein a current amplifier is connected to one end of the first wire electrode far from the chip and one end of the second wire electrode far from the chip, and the current amplifier is connected to a personal computer through a USB interface.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104117833A (en) * 2014-07-01 2014-10-29 北京全四维动力科技有限公司 Porous hydrophilic stainless steel heat exchange tube and surface treatment method thereof
CN104475893A (en) * 2014-11-04 2015-04-01 南京航空航天大学 Wire feeding micro electrochemical wire cutting process,
CN104646833A (en) * 2014-12-25 2015-05-27 广东工业大学 Laser preparation method of gradient wetted surface of metal substrate
CN105368938A (en) * 2015-11-06 2016-03-02 中国科学院重庆绿色智能技术研究院 Method for precisely preparing nanopores in silicon nitride thin film on basis of electric breakdown
CN105408241A (en) * 2013-03-15 2016-03-16 哈佛大学校长及研究员协会 Fabrication of nanopores in atomically-thin membranes by ultra-short electrical pulsing
CN107140600A (en) * 2017-05-16 2017-09-08 广东工业大学 A kind of controllable manufacture method of metal aperture
CN107530638A (en) * 2015-02-24 2018-01-02 渥太华大学 Irradiated by laser during controlled breakdown and manufactured to position nano-pore on film

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105408241A (en) * 2013-03-15 2016-03-16 哈佛大学校长及研究员协会 Fabrication of nanopores in atomically-thin membranes by ultra-short electrical pulsing
CN104117833A (en) * 2014-07-01 2014-10-29 北京全四维动力科技有限公司 Porous hydrophilic stainless steel heat exchange tube and surface treatment method thereof
CN104475893A (en) * 2014-11-04 2015-04-01 南京航空航天大学 Wire feeding micro electrochemical wire cutting process,
CN104646833A (en) * 2014-12-25 2015-05-27 广东工业大学 Laser preparation method of gradient wetted surface of metal substrate
CN107530638A (en) * 2015-02-24 2018-01-02 渥太华大学 Irradiated by laser during controlled breakdown and manufactured to position nano-pore on film
CN105368938A (en) * 2015-11-06 2016-03-02 中国科学院重庆绿色智能技术研究院 Method for precisely preparing nanopores in silicon nitride thin film on basis of electric breakdown
CN107140600A (en) * 2017-05-16 2017-09-08 广东工业大学 A kind of controllable manufacture method of metal aperture

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
In Situ Nanopore Fabrication and Single- Molecule Sensing with Microscale Liquid Contacts;Christopher E. Arcadia et al;《ACS Nano》;20170509;第11卷;4907-4915 *
Nanopore Arrays in a Silicon Membrane for Parallel Single-Molecule Detection: Fabrication;Schmidt, T et al;《Nanotechnology》;20150716;第26卷;314001 *
Nanopore Fabrication by Controlled Dielectric Breakdown;Harold Kwok et al;《PLOS ONE》;20140321;第9卷(第3期);e92880 *

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Inventor after: Yuan Zhishan

Inventor after: Lei Xin

Inventor after: Wang Chengyong

Inventor before: Lei Xin

Inventor before: Yuan Zhishan

Inventor before: Wang Chengyong

Inventor before: Ling Xinsheng

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