CN109629338B - A kind of bill paper and its manufacturing method - Google Patents

A kind of bill paper and its manufacturing method Download PDF

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Publication number
CN109629338B
CN109629338B CN201811338268.0A CN201811338268A CN109629338B CN 109629338 B CN109629338 B CN 109629338B CN 201811338268 A CN201811338268 A CN 201811338268A CN 109629338 B CN109629338 B CN 109629338B
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millimeter wave
layer
metal layer
paper
transmission line
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CN109629338A (en
Inventor
韩小西
张耀辉
陈小明
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Xiaohan Safety (beijing) Technology Co Ltd
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    • DTEXTILES; PAPER
    • D21PAPER-MAKING; PRODUCTION OF CELLULOSE
    • D21HPULP COMPOSITIONS; PREPARATION THEREOF NOT COVERED BY SUBCLASSES D21C OR D21D; IMPREGNATING OR COATING OF PAPER; TREATMENT OF FINISHED PAPER NOT COVERED BY CLASS B31 OR SUBCLASS D21G; PAPER NOT OTHERWISE PROVIDED FOR
    • D21H21/00Non-fibrous material added to the pulp, characterised by its function, form or properties; Paper-impregnating or coating material, characterised by its function, form or properties
    • D21H21/14Non-fibrous material added to the pulp, characterised by its function, form or properties; Paper-impregnating or coating material, characterised by its function, form or properties characterised by function or properties in or on the paper
    • D21H21/40Agents facilitating proof of genuineness or preventing fraudulent alteration, e.g. for security paper
    • DTEXTILES; PAPER
    • D21PAPER-MAKING; PRODUCTION OF CELLULOSE
    • D21FPAPER-MAKING MACHINES; METHODS OF PRODUCING PAPER THEREON
    • D21F13/00Making discontinuous sheets of paper, pulpboard or cardboard, or of wet web, for fibreboard production
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier

Abstract

This application provides a kind of bill paper and its manufacturing methods, comprising: by pulp deposits in mold;At least one millimeter wave label is fallen into and is embedded in paper pulp;Bill paper is formed after the paper pulp filtering is fallen moisture.Due to increasing millimeter wave label in bill paper, so as to realize the purpose of anti-counterfeiting mark in the sightless situation of naked eyes, user no longer needs to the naked eye carry out the complicated anti-fake differentiation of comparison, and criminal is also difficult to forge, has not only facilitated user but also improved anti-forgery security.

Description

A kind of bill paper and its manufacturing method
Technical field
This application involves paper printing technical field more particularly to a kind of bill papers and its manufacturing method.
Background technique
As one of ancient Chinese four inventions, paper is used to write picture, printing books and newspapers, packaging etc., is widely used for people.
Currently, in order to it is anti-fake, mark etc., usually in the various labels of paper printed thereon made, such as: color, text, Pattern with the development of science and technology, having also appeared the bill paper of two-dimension code anti-counterfeit mark, and is used for paper money in circulation anti-counterfeiting technology It is then higher, it will usually to have the various ways such as watermark, safety line, coding to prevent from forging.
However, these existing anti-counterfeiting mark modes, due to be mostly realized by the macroscopic content of people it is anti-fake, Be easy to be imitated forgery and user's identification get up it is also more complicated.
Summary of the invention
The embodiment of the present application proposes a kind of bill paper and its manufacturing method, is held with solving bill paper in the prior art The technical issues of being easily imitated forgery.
The embodiment of the present application provides a kind of manufacturing method of bill paper, includes the following steps:
By pulp deposits in mold;
At least one millimeter wave label is embedded in paper pulp;
Bill paper is formed after the paper pulp filtering is fallen moisture.
The embodiment of the present application provides a kind of bill paper, manufactures to obtain using method as described above.
It has the beneficial effect that:
Bill paper and its manufacturing method provided by the embodiment of the present application, due to increasing millimeter wave in bill paper Label, so as to realize the purpose of anti-counterfeiting mark in the sightless situation of naked eyes, user no longer needs to the naked eye carry out complexity The anti-fake differentiation of comparison, criminal is also difficult to forge, not only facilitated user but also improved anti-forgery security.
Detailed description of the invention
The specific embodiment of the application is described below with reference to accompanying drawings, in which:
Fig. 1 shows the flow diagram that the manufacturing method of the embodiment of the present application bill paper is implemented;
Fig. 2 shows the schematic top plan views of bill paper manufacturing process in the embodiment of the present application;
Fig. 3 shows the structural schematic diagram of millimeter wave fairing in the embodiment of the present application;
Fig. 4 shows the structural schematic diagram of chip in the embodiment of the present application;
Fig. 5 shows chip schematic top plan view in the embodiment of the present application;
Fig. 6 shows the manufacturing process schematic diagram of bank-note paper in the embodiment of the present application.
Specific embodiment
In order to which technical solution and the advantage of the application is more clearly understood, below in conjunction with attached drawing to the exemplary of the application Embodiment is described in more detail, it is clear that and described embodiment is only a part of the embodiment of the application, rather than The exhaustion of all embodiments.And in the absence of conflict, the feature in the embodiment and embodiment in this explanation can be mutual It combines.
In view of the deficiencies of the prior art, the embodiment of the present application proposes a kind of bill paper and its manufacturing method, below into Row explanation.
Embodiment 1
Fig. 1 shows the flow diagram that the manufacturing method of the embodiment of the present application bill paper is implemented, as shown, packet It includes:
Step 101, by pulp deposits in mold;
At least one millimeter wave label is embedded in paper pulp by step 102;
Step 103 forms bill paper after the paper pulp filtering is fallen moisture.
When it is implemented, mold can be the tool of the different demands such as the shape according to the bill paper, thin and thick adaptation.
The millimeter wave label can be millimetre-sized chip, and after being added in bill paper, touching the bill paper will not There is protrusion or user is allowed to experience, also, the printing of other texts or pattern can be carried out in bill paper, and to described Bill paper such as is folded, is rubbed at the operation, will not damage the millimeter wave label.
The millimeter wave label can be previously written information, such as: there is mark, the coding of anti-fake effect, serial number etc., In To the bill paper carry out it is anti-fake verification, mark identification when, can by read equipment (such as: card reader, intelligent terminal etc. Equipment) close to the bill paper, that is, the information in the millimeter wave label can be read.
The manufacturing method of bill paper provided by the embodiment of the present application, due to increasing millimeter wave mark in bill paper Label, so as to realize the purpose of anti-counterfeiting mark in the sightless situation of naked eyes, user no longer needs to the naked eye carry out complexity Anti-fake differentiation is compared, criminal is also difficult to forge, and has not only facilitated user but also has improved anti-forgery security.
In implementation, the mold can be moveable die strip;It is described by pulp deposits in mold, may include:
By pulp deposits on die strip in the die strip moving process.
When it is implemented, the die strip can be the ribbon mold that multiple molds are sequentially connected composition, it is also possible to The general name of multiple molds and conveyer belt.
It is described that millimeter wave label is embedded in paper pulp in implementation, may include:
In the every mobile preset time of die strip or pre-determined distance, at least one millimeter wave label is embedded in paper pulp.
Fig. 2 shows the schematic top plan views of bill paper manufacturing process in the embodiment of the present application, as shown, the bill Paper manufacturing process can be such that
Paper pulp can shed top-down in equipment be deposited on mold from paper pulp;
Assuming that the width of mold is 5cm, the area for the paper pulp that can once deposit is 7*5cm, then the embodiment of the present application It can be sprinkled into a millimeter wave label in the area of every 7*5cm, then move the mold from left to right or from right to left Dynamic 7cm (assuming that mold movement needs 3s).
The bill paper can be cut according to the length of 7cm after eventually forming bill paper.
In implementation, a millimeter wave label is included at least in the paper pulp of mold preset area.
Assuming that the width of mold is 50cm, the area for the paper pulp that can once shed is 70*50cm, then the application is implemented Example can be sprinkled into a millimeter wave label in the area (preset area) of every 7*5cm, after being sprinkled into 100 millimeter wave labels, 70cm can be moved from left to right or from right to left through the mold.
In implementation, in the preset area, position of the millimeter wave label in paper pulp can be random.
When it is implemented, in the area of the 7*5cm, the position of the millimeter wave label can be it is random, can also be with It is fixed.If it is the situation that position is random, then make the millimeter wave label of the bill paper be more not easy to be found into And further increase anti-forgery security;If the case where being fixed in position, the anti-counterfeiting detection of bill paper is then come relatively Saying may be more convenient, and those skilled in the art can according to actual needs set the position that is sprinkled into of millimeter wave label It sets.
In implementation, the method be may further include:
The bill paper is cut according to the preset area.
When it is implemented, in conjunction with above example, eventually forming can be by the bill paper according to 7* after bill paper The area of 5cm is cut, and final realize meets actual needs, the available bill paper of size.
In implementation, the millimeter wave label includes: millimeter wave antenna and millimeter wave fairing,
The millimeter wave antenna, for receiving millimeter wave energy;
The millimeter wave fairing, the high frequency division in millimeter wave energy for receiving the millimeter wave antenna transmission Amount obtains rectification component after being rectified, obtain DC component to the high fdrequency component and rectification component isolation processing and store.
A kind of preferable implementation, in the technical solution that the application proposes, milli that the millimeter wave antenna receives Metric wave energy is 10mW.
Fig. 3 shows the structural schematic diagram of millimeter wave fairing in the embodiment of the present application, as shown, being said below It is bright.
In implementation, the millimeter wave fairing includes the first isolated location 302, the second isolated location 303, rectification unit 304 and energy-storage units 305, wherein
First isolated location is electrically connected with the millimeter wave antenna 301, for receiving the milli of millimeter wave antenna transmission Metric wave energy, and the high fdrequency component in millimeter wave energy is transmitted separately to rectification unit and the second isolated location;
The rectification unit passes the rectification component obtained after rectification for rectifying the high fdrequency component received It is defeated by second isolated location;
Second isolated location is electrically connected, for the rectification to be isolated respectively with the first isolated location and rectification unit High fdrequency component in component, and the DC component in the rectification component is transmitted to energy-storage units;
The energy-storage units, for storing the DC component of the rectification unit transmission.
When it is implemented, may also include fraction of high fdrequency component in the rectification component of the rectification unit transmission, therefore High fdrequency component in second isolated location isolation rectification component, is transmitted to energy-storage units for DC component.
In the millimeter wave fairing that above-mentioned the application proposes, when applying in RFID, millimeter wave antenna can be received The millimeter wave of transmission, and by the buffer action of the first isolated location, the second isolated location, rectification unit is rectified straight Flow component is transferred to energy-storage units, the DC component storage that energy-storage units are used to obtain, the subsequent driving that may be used as RFID Energy, as RFID provide electric energy.
In implementation, the first isolated location includes at least one capacitor.
Capacitor can carry out energy storage to electric energy as energy-storage travelling wave tube.First isolated location may include multiple capacitors, or It is to be protected by resistance to capacitor, can be specifically determined according to the electric energy input value of fairing.
A kind of preferable implementation, it is contemplated that the lesser size of RFID, the first isolation of selection is single in the embodiment of the present application Member uses a capacitor, which can be one of metal-insulating layer-metal capacitor (MIM) capacitor, the value of capacitor Range can be 0.01 pico farad~0.2 pico farad, and in the embodiment of the present application, the value of capacitor is 0.1 pico farad.
Specifically, in the embodiment of the present application technical solution set forth above, MIM capacitor is and semiconductor integrated circuit Metal of manufacturing process, such as silicon nitride, silica medium etc. are not done specifically defined herein.
In implementation, the second isolated location may include at least one inductance element, or other electricity with inductance performance Sub- component.Specific restriction is not done herein.
In the embodiment of the present application, in order to adapt to the smaller size of RFID, the second isolated location only includes an inductance, and Further the high fdrequency component flowed out from the first isolated location can be isolated for two isolated locations.
Specifically, which can be one of stratiform geometric pattern inductance, and the value range of inductance is 0.1 nanohenry benefit~1 Nanohenry benefit, preferably, in the embodiment of the present application, the value of inductance 301 is 0.5 nanohenry benefit.
Specifically, inductance is stratiform geometric pattern in the technical solution that the embodiment of the present application proposes, with semiconductor integrated circuit work The metal line of skill is compatible.
In implementation, rectification unit may include first transmission line, second transmission line, third transmission line and diode;
Wherein, respectively one end is hanging for first transmission line and second transmission line;
The not hanging one end of first transmission line and the not hanging one end of second transmission line, with connect after third transmission line and Diode connection.
In the embodiment of the present application, the material of first transmission line, second transmission line and third transmission line can be identical Metal material, alloy material etc. are also possible to different material.
A kind of preferably implementation, in the embodiment of the present application, first transmission line, second transmission line and third transmission line Material it is identical.Such as it can be metal wire.
First transmission line, second transmission line, the material of third transmission line are identical, can be primary in circuit production technique Property etching complete, need not move through the iterative process such as exposure mask, etching, can preferably improve the yield rate of circuit production.
Specifically, the millimeter wave energy that first transmission line, the value of second transmission line and third transmission line and antenna receive Amount is related, more specifically, the millimeter wave that first transmission line, the value of second transmission line and third transmission line and antenna receive Wavelength is related.
Specifically, first transmission line value range is between 10 ohm~100 ohm.
Preferably implementation, the value of first transmission line are 1/12 λ to one kind, and wherein λ is the millimeter wave that antenna receives Wavelength.
Specifically, second transmission line value range is between 10 ohm~100 ohm.
The value of a kind of preferably implementation, second transmission line is 1/8 λ, and wherein λ is the millimeter wave wave that antenna receives It is long.
Specifically, third transmission line value range is between 10 ohm~100 ohm.
A kind of preferably implementation, third transmission line value are 1/4 λ, and wherein λ is the millimeter wave wave that antenna receives It is long.
Specifically, the diode in above-mentioned converting unit is Schottky diode.
In the embodiment of the present application technical solution set forth above, first transmission line, second transmission line and third transmission Line, characteristic impedance value are easier when manufacturing when big, and yield rate is higher.Specifically, above-mentioned in the embodiment of the present application In the technical solution of proposition, (transmission line includes first, the to the length for depending primarily on transmission line of transmission line role here Two and third transmission line).Characteristic impedance depends on the width of each transmission line.
In implementation, energy-storage units include at least one capacitor, which can be one of mim type, the appearance of the capacitor Value can be 0.05pf~0.5pf.
A kind of preferably implementation, in the technical solution proposed in the embodiment of the present application, energy-storage units include an electricity Hold, which is 0.1pf.
In millimeter wave fairing set forth above, by the first isolated location, by the high fdrequency component in millimeter wave energy It is transmitted separately to rectification unit, and realizes the DC component isolation after rectification, eventually by the second isolated location by high fdrequency component It is isolated, stores DC component in energy-storage units, provide electric energy for millimeter wave fairing, by above-mentioned fairing, apply In the lesser millimeter wave label of size, it can guarantee that the millimeter wave label of small size can work normally.
In implementation, the millimeter wave antenna and the millimeter wave fairing are set in same chip.
Fig. 4 shows the structural schematic diagram of chip in the embodiment of the present application, as shown, including in the chip layer structure The silicon substrate layer 401 of setting, the first metal layer 402, functional circuit layer and second metal layer 403 are stacked from the bottom to top, it is described each It is separated by between layer with insulating layer, insulating layer here is usually oxide skin(coating).
The first metal layer is set on silicon substrate layer, is the metal layer in each metal closest to silicon substrate layer, described The first metal layer ground connection.
In some embodiments, the dielectric constant of the silicon substrate layer is 11.9.
In some embodiments, be guarantee isolation performance, between the first metal layer and the silicon substrate layer (1) by Under it is supreme further include oxide skin(coating) (i.e. the first oxide skin(coating)), nitride layer and oxide skin(coating), wherein the thickness of the first oxide skin(coating) Degree be 0.57 μm, nitride layer with a thickness of 0.05 μm.
The second metal layer is located at chip top layer, and top layer here refers to the metal layer above chip, In More than the layer can there are other insulating layers or encapsulated layer etc..The second metal layer is printed with on-chip antenna.
In some embodiments, the first metal layer with a thickness of 0.26 μm, the second metal layer with a thickness of 0.96μm。
In some embodiments, four layers illusory (Dummy) gold are equipped between the first metal layer and the second metal layer Belong to layer 404, with exhausted between each dummy metal layer and between each dummy metal layer and the first metal layer and second metal layer Edge layer is separated by.Here insulating layer is usually oxide skin(coating).
The functional circuit layer is set between the first metal layer and the second metal layer, and the functional circuit layer is set Functional circuit, the functional circuit are used for, the high fdrequency component in the millimeter wave energy of receiving antenna transmission, after being rectified To rectification component, DC component is obtained to the high fdrequency component and the rectification component isolation processing, stores the DC component. The i.e. described functional circuit layer includes the main circuit of millimeter wave RFID label tag, for realizing the function of millimeter wave fairing.
Fig. 5 shows chip schematic top plan view in the embodiment of the present application, and which show the first metal layers 402 and the second gold medal Belong to layer 403 and on-chip antenna (millimeter wave antenna) and ground pad in second metal layer 403.
As shown in figure 5, the on-chip antenna be inverse-F antenna, the inverse-F antenna include two feed arms 407, transverse arm 408, First tail arm 409 and the second tail arm 410;Described 408 one end of transverse arm and two feed arms, 407 vertical connection, the other end with One end vertical connection of first tail arm 409;The other end of first tail arm 409 is vertical with one end of second tail arm 410 Connect, second tail arm 410 is located at the same side of first tail arm 409 with the transverse arm 408.
The open end bending (the first tail arm and the second tail arm) of antenna realizes a kind of more preferably inverse-F antenna structure, draws The capacity effect entered is helped to realize than the common better 50 Ω matching of inverse-F antenna and broader -10dB coupling bandwidth.
In some embodiments, the specific size of antenna can be 100 μm of length of feed arm (7), the length of transverse arm (8) It is 350 μm, 62 μm of length of the first tail arm (9), 50 μm of length of the second tail arm (10).
Inverse-F antenna can be a quarter guiding wavelength of working frequency from ground level to open end, change this length Facilitate the resonant frequency of adjustment inverse-F antenna.Between input impedance can easily pass through between modification ground connection and feed strip Away from matching 50 Ω.In addition, we can slightly reduce input resistance by the height of increase inverse-F antenna transverse arm far from ground plane Anti- real part and resonance frequency.
In some embodiments, antenna is grounded feed by multiple ground pads 411 in the second metal layer 403, The ground pad is the square that side length is 80 μm, and each ground pad is linearly arranged, in two adjacent ground pads In the heart away from being 150 μm, the through-hole that the ground pad passes through 0.19 μm of diameter respectively is connected to the first metal layer.
In the optimization process of the input impedance of antenna, it is contemplated that the surface of position of these pads imitates the capacitor of ground level It answers, therefore does not need further De- embedding technology.
In some embodiments, to one week progress deep etching outside the active area of the chip until the silicon substrate layer, And in active area outer side covering oxide skin(coating) and silicon nitride layer, the thickness of the silicon nitride layer is not less than 3 μm.Chip technology and After top-level metallic layout is completed, opposite side is needed also to be passivated layer protection, it, can be true by being so passivated packaging technology It protects bare chip and can be stored for a long time under salt fog and steam hot environment and do not failed.
The chip that the embodiment of the present application proposes, including silicon substrate layer, millimeter wave RF ID functional circuit layer and on-chip antenna Layer, and each interlayer has insulating layer, and the chip can be realized millimeter wave RIFD chip correlation function and electromagnetic performance can It leans on.Antenna size is small in millimeter wave label chip in the application, can be integrated into chip, and the size of entire millimeter wave label can With small to 0.5mm square hereinafter, thickness can be at 100 microns even 60 microns or less;It is handled using special surface passivation layer Make the application chip can be immersed in the long period process for machining and manufacturing of the medium suitable paper of aqueous solution, leather or fabric with And cleaning, carrying and the folding in later period etc..
Embodiment 2
Based on the same inventive concept, the embodiment of the present application provides a kind of bill paper, is illustrated below.
Bill paper provided by the embodiment of the present application manufactures to obtain using manufacturing method provided by above-described embodiment 1.
Specifically, the embodiment of the present application provides a kind of bill paper, the bill paper, comprising: millimeter wave label.
The bill paper as provided by the embodiment of the present application increases millimeter wave label, so as to invisible in naked eyes In the case where realize the purpose of anti-counterfeiting mark, user no longer needs to the naked eye to carry out the complicated anti-fake differentiation of comparison, criminal It is difficult to forge, has not only facilitated user but also improves anti-forgery security.
In implementation, the bill paper can be the various bills such as bank note (or banknote), invoice, disengaging voucher.
It can be used since in actual life, bill paper is widely used, in various bill papers provided herein Mode implement, the application will not enumerate herein.It should be appreciated that the implementation of the application is used for any bill paper On within the scope of protection of this application.
Embodiment 3
The embodiment of the present application is illustrated by taking the manufacturing process of banknote as an example.
Existing bank-note paper production process is generally as follows:
1) cotton linter adds water, stirring, forms uniform paper pulp
2) copy paper
Mold (such as: the mold being made of 7*5 100 yuan notes) there are a series of meshes, the mesh at watermark is than other Local big (being greater than water note speed elsewhere so as to thicker close formation watermark).It is put in the small mold certain position of each of 7*5 Set safety line;It is sprinkled into ultraviolet (UV) fluorescence chalk line at random at each small die location;Die strip (the item of multiple big mold compositions Band) it is moved in paper pulp, the pulp-water mesh in flow through molds from top to bottom causes to deposit, the shifting of water velocity and die strip Dynamic speed and width of mesh have codetermined the thickness of deposit fiber, density etc..
3) empty water, drying, a roll of continuous bank-note paper of formation are supplied to banknote factory as raw material and print.
Banknote factory printing process is generally as follows:
Paper roll copy paper --- > cut into big --- > examine offset printing (polychrome) --- > examine gravure is (polychrome, a variety of anti-fake Material printing, such as the ink that changes have the equipment such as raised sense, braille and specially control) --- and the printing of > check-number (crown word number, every It is different) --- > cut into Xiao Zhang --- > check --- > encapsulation.
The embodiment of the present application is then the addition millimeter wave label in the production process of bank-note paper, is illustrated below.
Fig. 6 shows the manufacturing process schematic diagram of bank-note paper in the embodiment of the present application, as shown, can specifically include as Lower step:
Paper pulp is fallen into mold by step 601 from top to bottom;
Step 602 falls into a millimeter wave label in paper pulp;
Step 603, paper pulp form paper after mesh belt filters out moisture, carry out the subsequent processing such as drying;
Step 604, the mold (mesh belt) move from left to right, and return step 601 executes, and continue to be put into paper pulp.
When it is implemented, usually fluorescent powder can be shed simultaneously with paper pulp, and millimeter wave label can be similar with safety line, It is fallen into paper pulp after timing is sheared, specific location of the millimeter wave label on every banknote, which can be fixed, to be also possible at random 's.
The embodiment of the present application realizes the function of anti-counterfeiting mark by the addition millimeter wave label in banknote manufacturing process, And in banknote surface be not people's naked eyes as it can be seen that be difficult to be copied or found, the anti-forgery security of banknote is greatly improved, and User need to only use card reader, intelligent terminal (such as: mobile phone) equipment scanning recognition, do not need naked eyes and carry out complicated differentiation, It is simple and fast, greatly improve user experience.
Embodiment 4
The embodiment of the present application is illustrated by taking the manufacturing process of train ticket as an example.
In the prior art, train ticket be usually with certain degree of hardness paper printed thereon origin, destination, dispatch a car Time, train number, price, passenger identity card number, two dimensional code mark, by verification ID card No., scan the two-dimensional code mark come Realize ticket verifying.
The millimeter wave mark can be added during the manufacture paper with certain degree of hardness in the embodiment of the present application Label, specific adition process can be carried out with reference to above-described embodiment, and this will not be repeated here by the application.It is only needed when carrying out ticket verifying Equipment is read close to the ticket using card reader etc., that is, testing for the information realization ticket in the millimeter wave label can be read Card.
Using ticket manufacturing technology provided by the embodiment of the present application, it is no longer necessary to print passenger's on the paper of ticket The information such as ID card No., two dimensional code conveniently realize ticket checking, and are not easy to be forged by criminal, greatly improve Safety.
Although the preferred embodiment of the application has been described, it is created once a person skilled in the art knows basic Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as It selects embodiment and falls into all change and modification of the application range.

Claims (20)

1. a kind of manufacturing method of bill paper, which comprises the steps of:
By pulp deposits in mold;
At least one millimeter wave label is embedded in paper pulp;
Bill paper is formed after the paper pulp filtering is fallen moisture;
The millimeter wave label includes: millimeter wave antenna and millimeter wave fairing,
The millimeter wave antenna, for receiving millimeter wave energy;
The millimeter wave fairing, the high fdrequency component in millimeter wave energy for receiving the millimeter wave antenna transmission, will It obtains rectification component after rectifying, obtain DC component to the high fdrequency component and rectification component isolation processing, stores described straight Flow component is that the millimeter wave is tag-powered;
The millimeter wave antenna and the millimeter wave fairing are set in same chip;
The millimeter wave antenna is inverse-F antenna;The inverse-F antenna includes two feed arms, transverse arm, the first tail arm and the second tail Arm;Described transverse arm one end and two feed arm vertical connections, one end vertical connection of the other end and the first tail arm;Described One end vertical connection of the other end of one tail arm and second tail arm, second tail arm and the transverse arm are located at described first The same side of tail arm.
2. the method as described in claim 1, which is characterized in that the mold is moveable die strip, described that paper pulp sinks Product is in mold, comprising:
By pulp deposits on die strip in the die strip moving process.
3. method according to claim 2, which is characterized in that described that at least one millimeter wave label is embedded in paper pulp, packet It includes:
In the every mobile preset time of die strip or pre-determined distance, at least one millimeter wave label is embedded in paper pulp.
4. the method as described in claim 1, which is characterized in that include at least a millimeter in the paper pulp of mold preset area Wave label.
5. method as claimed in claim 4, which is characterized in that in the preset area, the millimeter wave label is in paper pulp In position be random.
6. method as claimed in claim 4, which is characterized in that further comprise:
The bill paper is cut according to the preset area.
7. the method as described in claim 1, which is characterized in that the millimeter wave fairing includes the first isolated location, the Two isolated locations, rectification unit and energy-storage units, wherein
First isolated location, is electrically connected with the millimeter wave antenna, for receiving the millimeter wave energy of millimeter wave antenna transmission Amount, and the high fdrequency component in millimeter wave energy is transmitted separately to rectification unit and the second isolated location;
The rectification unit, for the high fdrequency component received to be rectified, by the rectification components obtained after rectification to Second isolated location;
Second isolated location is electrically connected, for the rectification component to be isolated respectively with the first isolated location and rectification unit In high fdrequency component, and by it is described rectification component in DC component be transmitted to energy-storage units;
The energy-storage units, for storing the DC component of the rectification unit transmission.
8. the method for claim 7, which is characterized in that first isolated location includes at least one capacitor.
9. the method for claim 7, which is characterized in that second isolated location includes at least one inductance.
10. the method for claim 7, which is characterized in that the rectification unit, including first transmission line, the second transmission Line, third transmission line and diode;
Wherein, respectively one end is hanging for the first transmission line and second transmission line;
The not hanging one end of the first transmission line and the not hanging one end of second transmission line, with connect after third transmission line and Diode connection.
11. method as claimed in claim 10, which is characterized in that the diode is Schottky diode.
12. the method as described in claim 1, which is characterized in that the length of the feed arm is 100 μm, the length of the transverse arm Degree is 350 μm, and the length of first tail arm is 62 μm, and the length of second tail arm is 50 μm.
13. the method as described in claim 1, which is characterized in that the chip includes:
The silicon substrate layer of setting, the first metal layer, functional circuit layer and second metal layer are stacked from the bottom to top, between each layer It is separated by with insulating layer;
The first metal layer ground connection, is set on silicon substrate layer;
The second metal layer is located at chip top layer, and the millimeter wave antenna is printed in the second metal layer;
The functional circuit layer is set between the first metal layer and the second metal layer, and the millimeter wave fairing is set It is placed in the functional circuit layer.
14. method as claimed in claim 13, which is characterized in that set between the first metal layer and the second metal layer There are four layers of dummy metal layer, between each dummy metal layer and each dummy metal layer and the first metal layer and the second metal It is separated by between layer with insulating layer.
15. method as claimed in claim 13, which is characterized in that between the first metal layer and the silicon substrate layer at least Including the first oxide skin(coating) and nitride layer.
16. method as claimed in claim 13, which is characterized in that the millimeter wave antenna passes through in the second metal layer Multiple ground pads be grounded feed, the ground pad is the square that side length is 80 μm, and each ground pad is linearly arranged, The center spacing of two adjacent ground pads is 150 μm, and the ground pad passes through 0.19 μm of diameter of through-hole connection respectively To the first metal layer.
17. method as claimed in claim 13, which is characterized in that by one week deep etching outside the active area of the chip until The silicon substrate layer, and passivation layer is covered in active area lateral surface.
18. method as claimed in claim 17, which is characterized in that the passivation layer includes the second oxide skin(coating) and silicon nitride The thickness of layer, the silicon nitride layer is not less than 3 μm.
19. a kind of bill paper, which is characterized in that manufacture to obtain using the method as described in claim 1 to 18 is any.
20. bill paper as claimed in claim 19, which is characterized in that the bill paper is bank note.
CN201811338268.0A 2018-11-12 2018-11-12 A kind of bill paper and its manufacturing method Active CN109629338B (en)

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JP4567988B2 (en) * 2004-02-05 2010-10-27 株式会社日立製作所 Paper-like RFID tag and manufacturing method thereof
WO2007088873A1 (en) * 2006-01-31 2007-08-09 Nippon Tsushinshi Co., Ltd. Method for making paper embedding rfid chip, apparatus for making paper embedding rfid chip, unit mounting body for making embedding paper
JP5080509B2 (en) * 2009-02-10 2012-11-21 王子特殊紙株式会社 IC inlet built-in paper manufacturing method
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