CN109616499A - The manufacturing method of display panel, display device and display panel - Google Patents

The manufacturing method of display panel, display device and display panel Download PDF

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Publication number
CN109616499A
CN109616499A CN201811472203.5A CN201811472203A CN109616499A CN 109616499 A CN109616499 A CN 109616499A CN 201811472203 A CN201811472203 A CN 201811472203A CN 109616499 A CN109616499 A CN 109616499A
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CN
China
Prior art keywords
layer
led
micro
display panel
opening
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Application number
CN201811472203.5A
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Chinese (zh)
Inventor
陈鹏
王杨
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Priority to CN201811472203.5A priority Critical patent/CN109616499A/en
Publication of CN109616499A publication Critical patent/CN109616499A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

Abstract

Present disclose provides the manufacturing methods of a kind of display panel, display device and display panel.The display panel, comprising: substrate;Multiple first electrodes are located on the substrate;Pixel confining layer is located in the multiple first electrode and substrate, and has multiple openings of the multiple first electrode of exposure;Multiple organic luminous layers, in the multiple opening it is multiple first opening in;It is multiple micro-led, in multiple second openings in the multiple opening;And second electrode, be located at the multiple organic luminous layer and it is the multiple it is micro-led on.In this way, being provided with the region that micro-led display area may be used as the needs long-time display picture of display panel, avoid the problem that the display area aging occurs faster due to needing and showing for a long time.

Description

The manufacturing method of display panel, display device and display panel
Technical field
This disclosure relates to field of display technology, and in particular, to a kind of display panel, the display dress including the display panel It sets and the manufacturing method of the display panel.
Background technique
Currently, Organic Light Emitting Diode (OLED) display device has been widely used.
In some applications, a certain partial region of OLED display takes more time aobvious compared to other regions Show.For example, the display area LOGO of vehicle-mounted OELD display screen is longer than the working time of other display areas, therefore it is easy damage It is bad, that is, burn-in occurs.
It should be noted that information is only used for reinforcing the reason to the background of the disclosure disclosed in above-mentioned background technology part Solution, therefore may include the information not constituted to the prior art known to persons of ordinary skill in the art.
Summary of the invention
Embodiment of the disclosure is related to a kind of display panel, including the display device of the display panel and the display panel Manufacturing method.
According to the one side of the disclosure, a kind of display panel is provided, comprising: substrate;Multiple first electrodes are located at described On substrate;Pixel confining layer is located in the multiple first electrode and substrate, and has the more of the multiple first electrode of exposure A opening;Multiple organic luminous layers, in the multiple opening it is multiple first opening in;It is multiple micro-led, In multiple second openings in the multiple opening;And second electrode, it is located at the multiple organic luminous layer and described It is multiple it is micro-led on.
According to an exemplary embodiment of the present disclosure, micro-led that the first electricity can be electrically coupled to by bonded layer Pole.
According to an exemplary embodiment of the present disclosure, display panel can also include: encapsulated layer, encapsulate miniature hair in the opening A part of optical diode and the side for exposing micro-led separate substrate.
According to an exemplary embodiment of the present disclosure, it is provided with driving circuit in substrate, for driving organic luminous layer and micro- Type lumination of light emitting diode.
According to an exemplary embodiment of the present disclosure, micro-led includes first sequentially formed on the first electrode Conductive type semiconductor layer, active layer and second conductive type semiconductor layer, encapsulated layer are at least encapsulated the first conduction type and are partly led Body layer and active layer.
According to an exemplary embodiment of the present disclosure, the multiple first opening is located in the first area of the substrate, and And the first area includes one or more first subregions separated from each other.
According to an exemplary embodiment of the present disclosure, the multiple second opening is located in the second area of the substrate, and And the second area includes one or more second subregions separated from each other.
According to another aspect of the present disclosure, a kind of display device, including any of the above-described display panel are provided.
According to the another further aspect of the disclosure, a kind of manufacturing method of display panel is provided, comprising: formed on substrate more A first electrode;Pixel confining layer is formed on the multiple electrode and substrate, wherein pixel confining layer has exposure described more Multiple openings of a first electrode;Multiple organic luminous layers are formed in multiple first openings in the multiple opening;Institute State multiple openings it is the multiple second opening in formed it is multiple micro-led;And in the multiple organic luminous layer With the multiple micro-led upper formation second electrode.
According to an exemplary embodiment of the present disclosure, transfer printing process the multiple in the multiple opening can be passed through It is formed in two openings the multiple micro-led.
According to an exemplary embodiment of the present disclosure, passing through the multiple second of transfer printing process in the multiple opening When forming the multiple micro-led in opening, bonded layer is transferred to the second opening with micro-led together In, with by bonded layer by micro-led with first electrode electric coupling.
According to an exemplary embodiment of the present disclosure, this method further include: form encapsulated layer in the second opening, wherein envelope Dress layer encapsulates micro-led a part and exposes the side of micro-led separate substrate.
According to an exemplary embodiment of the present disclosure, micro-led includes first sequentially formed on the first electrode Conductive type semiconductor layer, active layer and second conductive type semiconductor layer, it is conductive that encapsulated layer is formed at least encapsulating first Type semiconductor layer and active layer.
It is aobvious in part in the manufacturing method of the display panel of embodiment of the disclosure, display device and display panel Show be arranged in region it is micro-led replace Organic Light Emitting Diode, be provided with micro-led display in this way The needs that region may be used as display panel show the region of picture for a long time, avoid when all OLED is arranged in whole display areas Due to part display area need for a long time show and occur the part display area aging faster the problem of.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the disclosure Example, and together with specification for explaining the principles of this disclosure.It should be evident that the accompanying drawings in the following description is only the disclosure Some embodiments for those of ordinary skill in the art without creative efforts, can also basis These attached drawings obtain other attached drawings.
Fig. 1 is the schematic diagram for schematically showing display panel according to the exemplary embodiment of the disclosure;
Fig. 2 is the cross-sectional view for schematically showing display panel according to the exemplary embodiment of the disclosure;
Fig. 3 is the schematic diagram for schematically showing the display panel of the another exemplary embodiment according to the disclosure;
Fig. 4 is the schematic diagram for schematically showing the display panel of the another exemplary embodiment according to the disclosure;
Fig. 5-1 to Fig. 5-3 schematically shows the manufacturer of display panel according to the exemplary embodiment of the disclosure Method;
Fig. 6 is schematically shown the micro-led signal being arranged in display panel through transfer printing process Figure
Specific embodiment
Exemplary embodiment of the present invention is described more fully with now with reference to attached drawing.However, embodiment can be with a variety of Form is implemented, and is not understood as limited to example set forth herein;On the contrary, thesing embodiments are provided so that the present invention will more Add fully and completely, and design of the invention is comprehensively communicated to those skilled in the art.Described feature, structure or Characteristic can be incorporated in any suitable manner in one or more embodiments.
For ease of description, spatially relative term can be used herein, as "lower", " in ... top ", "upper", " ... under Side " etc. describes the relationships of elements or features as illustrated in the drawing and other elements or feature.It will be appreciated that space phase Term is intended to comprising the different direction of device in use or operation other than the orientation being described in the accompanying drawings.
It will be further understood that when the term " comprising " and/or " including " is used in this specification, illustrating that there are the spies Sign, entirety, step, operation, element and/or component, but do not preclude the presence or addition of one or more other features, entirety, step Suddenly, operation, element, component and/or their group.
In some applications, a part of region of OLED display panel takes more time display compared to other regions. For example, the display area LOGO of vehicle-mounted OELD display screen is longer than the working time of other display areas, therefore it is easily damaged, That is, burn-in occurs.
The exemplary embodiment of the disclosure provides a kind of display panel, can at least overcome the above problem.
Fig. 1 is the schematic diagram for schematically showing display panel according to the exemplary embodiment of the disclosure.
As shown in fig. 1, which includes at least two regions, that is, first area 1 and second area 2.Firstth area It is arranged micro-led in domain 1, Organic Light Emitting Diode is set in second area 2.
Have the advantages that display life is long compared to Organic Light Emitting Diode due to micro-led, the display The micro-led first area 1 that is provided with of panel may be used as the needs long-time display picture of display panel Region, for example, may be used as the display area vehicle-carrying display screen LOGO, to avoid due in running order for a long time than other Region is first damaged.
Describe display panel according to the exemplary embodiment of the disclosure in detail below with reference to Fig. 2.
Fig. 2 is the cross-sectional view for schematically showing display panel according to the exemplary embodiment of the disclosure, wherein in order to For the sake of clear, single OLED and single led cross-sectional view are illustrated only.
As shown in Figure 2, which may include: substrate 10;Multiple first electrodes 20 are located at 10 on substrate;Picture Plain confining layers 30 are located in multiple first electrodes 20 and substrate 10, and have multiple openings 40 of the multiple first electrodes 20 of exposure; Multiple organic luminous layers 50, multiple first in multiple openings 40 are open in 41;Multiple micro-led 60, it is located at In multiple second openings 42 in multiple openings 40;And second electrode 70, it is located at multiple organic luminous layers 50 and multiple miniature On light emitting diode 60.
As described above, being provided with micro-led region may be used as display surface in the display panel The needs of plate show the region of picture for a long time, for example, may be used as the display area LOGO of vehicle-carrying display screen, to avoid because of length Time is in running order and first damages than other regions.
It is provided with driving circuit in substrate 10, for driving organic luminous layer 50 and micro-led 60 to shine.
Specifically, which may include substrate 11.Substrate 11 can be dielectric base, including such as glass, polymerization Object etc..
Multiple thin film transistor (TFT)s are arranged in substrate 11.Here for the sake of clarity, driving thin film transistor (TFT) is illustrated only, However it will be clear for those skilled in the art that the present disclosure is not limited thereto.For example, for each luminescence unit (for example, each Organic luminous layer is each micro-led) for, also settable switching thin-film transistor and capacitor in substrate 11. In addition, it will be clear for those skilled in the art that the quantity of thin film transistor (TFT) and capacitor is not particularly limited.
As shown in Figure 2, thin film transistor (TFT) may include active layer AL, gate insulation layer GI, gate electrode GE and source/drain S/ D。
Active layer AL is arranged in substrate 11, can be formed by such as polysilicon and oxide semiconductor.Active layer AL Including the channel region and the source region formed when impurity is entrained in the two sides of channel region that undope and drain region.Gate insulating layer GI It is arranged in substrate 11 to cover active layer AL, so that active layer AL and gate electrode GE be made to insulate.Gate electrode GE setting is exhausted in grid On edge layer GI.Interlayer insulating film ILD is arranged on gate insulation layer GI, with covering grid electrode GE, such as can be by dielectric material It is formed.Source/drain S/D is arranged on interlayer insulating film ILD, and via across the logical of interlayer insulating film ILD and gate insulation layer GI Hole is coupled to source region and drain region.Planarization layer PLN is arranged on interlayer insulating film ILD and covers source/drain S/D, so that substrate 10 upper surface (side surface far from substrate 11) planarization.
Multiple first electrodes 20 are arranged on planarization layer PLN, and are connected to via the through-hole across planarization layer PLN Source electrode or drain electrode in source/drain S/D.For example, first electrode 20 can be anode, and it can be and led by what is be capable of reflecting light The reflecting electrode that electric material is formed.
Pixel confining layer 30 is arranged on planarization layer PLN and has the opening 40 of a part of exposure first electrode 20.
Multiple organic luminous layers 50 are arranged in multiple first openings 41 in multiple openings 40 and are electrically connected to the first electricity Pole 20 (for example, being formed in first electrode 20).For example, multiple organic luminous layers 50 are arranged in the secondth area as shown in Figure 1 In domain 2, that is, be arranged in the first opening 41 in second area 2.Here, organic luminous layer 50 may include for example empty Cave implanted layer, hole transmission layer, emission layer, electron transfer layer, electron injecting layer etc..Hole and electrode can be respectively from the first electricity Pole 20 and second electrode 70 are applied in organic luminous layer 50, be then bonded to each other in the emission layer of organic luminous layer 50 with Exciton is formed, to shine.
Multiple micro-led 60 are located in multiple second openings 42 in multiple openings 40.For example, multiple miniature Light emitting diode 60 is arranged in first area 1 as shown in Figure 1, that is, the second opening being arranged in first area 1 In 42.
According to an exemplary embodiment of the present disclosure, micro-led 60 may include being sequentially formed at first electrode 20 On the first conductive type semiconductor layer, active layer and second conductive type semiconductor layer.For example, the first conductive type semiconductor Layer is p type semiconductor layer, and second conductive type semiconductor layer is n type semiconductor layer;Or first conductive type semiconductor Layer is n type semiconductor layer, and second conductive type semiconductor layer is p type semiconductor layer.
According to an exemplary embodiment of the present disclosure, in order between micro-led 60 and first electrode 20 combination and Conductive bonded layer 80 can be arranged in electrical connection between them.
In addition, according to an exemplary embodiment of the present disclosure, display panel may include encapsulated layer 90.Encapsulated layer 90 is second Micro-led 60 a part (that is, a part of the side surface of encapsulating micro-led 60) is encapsulated in opening 42 And the side of the separate substrate 10 of exposure micro-led 60.According to an exemplary embodiment of the present disclosure, encapsulated layer 90 to The first conductive type semiconductor layer and active layer are encapsulated less (that is, the side table of encapsulating the first conductive type semiconductor layer and active layer Face), active layer and the first conductive type semiconductor layer are in electrical contact to avoid second electrode 70.
Although different with the shape of the second opening 42 shown in the drawings of the first opening 41, those skilled in the art will It is appreciated that the shape of the first opening 41 and the second opening 42 can be identical.Second opening 42 have with it is as shown in Figure 2 First opening 41 the identical shape of shape in the case where, at least part of the side surface of bonded layer 80 can be exposed to second In opening 42, therefore, encapsulated layer 90 can be arranged to being exposed in the second opening 42 for the side surface of encapsulating bonded layer 80 Part.
Second electrode 70 is located on multiple organic luminous layers 50 and multiple micro-led 60, and connects with their electricity Touching.According to an exemplary embodiment of the present disclosure, for example, second electrode 70 can be used as public electrode by multiple organic luminous layers 50 It is shared with multiple micro-led 60.In addition, according to an exemplary embodiment of the present disclosure, second electrode 70 may be used as Cathode.
Although showing the embodiment of a first area 1 and a second area 2 in Fig. 1.However, the present disclosure is not limited to This.
For example, as shown in figure 3, multiple first areas can be set.In other words, first area can be set to including that This separated multiple first subregion 1-1, and micro-led setting is in multiple first subregion 1-1.
In another example as shown in figure 4, first area can be set to including multiple first subregion 1-1 separated from each other, It can set second area to including multiple second subregion 2-1 separated from each other.It is micro-led to be arranged multiple In first subregion 1-1, multiple organic luminous layers are arranged in multiple second subregion 2-1.
Describe the exemplary embodiment of the manufacturing method of above-mentioned display panel in detail below with reference to Fig. 5-1 to Fig. 5-3.
Firstly, providing substrate 10, such as Fig. 5-1.
Specifically, which may include substrate 11.Substrate 11 can be dielectric base, including such as glass, polymerization Object etc..
Multiple thin film transistor (TFT)s are arranged in substrate 11.Here for the sake of clarity, driving thin film transistor (TFT) is illustrated only, However it will be clear for those skilled in the art that the present disclosure is not limited thereto.For example, for each luminescence unit (for example, each Organic luminous layer is each micro-led) for, also settable switching thin-film transistor and capacitor in substrate 11. In addition, it will be clear for those skilled in the art that the quantity of thin film transistor (TFT) and capacitor is not particularly limited.
Thin film transistor (TFT) may include active layer AL, gate insulation layer GI, gate electrode GE and source/drain S/D.
Active layer AL is arranged in substrate 11, can be formed by such as polysilicon and oxide semiconductor.Active layer AL Including the channel region and the source region formed when impurity is entrained in the two sides of channel region that undope and drain region.Gate insulating layer GI It is arranged in substrate 11 to cover active layer AL, so that active layer AL and gate electrode GE be made to insulate.Gate electrode GE setting is exhausted in grid On edge layer GI.Interlayer insulating film ILD is arranged on gate insulation layer GI, with covering grid electrode GE, such as can be by dielectric material It is formed.Source/drain S/D is arranged on interlayer insulating film ILD, and via across the logical of interlayer insulating film ILD and gate insulation layer GI Hole is coupled to source region and drain region.Planarization layer PLN is arranged on interlayer insulating film ILD and covers source/drain S/D, so that substrate 10 upper surface (side surface far from substrate 11) planarization.
Next, forming multiple first electrodes 20, such as Fig. 5-1 on the substrate 10.
Multiple first electrodes 20 are arranged on planarization layer PLN, and are connected to via the through-hole across planarization layer PLN Source electrode or drain electrode in source/drain S/D.For example, first electrode 20 can be anode, and it can be and led by what is be capable of reflecting light The reflecting electrode that electric material is formed.
Next, forming pixel confining layer 30 in multiple electrodes 20 and substrate 10, wherein pixel confining layer 30 has sudden and violent Reveal multiple openings 40 of multiple first electrodes, such as Fig. 5-1.
Multiple opening 40 includes that miniature hair will wherein be arranged by the first opening 41 that organic luminous layer 50 is arranged and wherein Second opening 42 of optical diode.As described above, the first opening 41 and the second opening 42 can be shaped as here It is mutually the same, can also by first opening 41 and second opening 42 be shaped as it is different from each other.
Next, it is multiple opening 40 in it is multiple first opening 41 in form multiple organic luminous layers 50, such as Fig. 5-2.
As shown, multiple organic luminous layers 50 are arranged in multiple first openings 41 in multiple openings 40 and are electrically connected It is connected to first electrode 20 (for example, being formed in first electrode 20).For example, being arranged multiple organic luminous layers 50 as shown in figure 1 Shown in second area 2, that is, be arranged in the first opening 41 in second area 2.Here, organic luminous layer 50 can To include such as hole injection layer, hole transmission layer, emission layer, electron transfer layer, electron injecting layer.Hole and electrode can be with It is applied in organic luminous layer 50 from first electrode 20 and second electrode 70 respectively, then in the emission layer of organic luminous layer 50 In be bonded to each other to form exciton, thus shine.
Next, it is multiple opening 40 in it is multiple second opening 42 in form multiple micro-led 60, such as scheme 5-2。
Multiple micro-led 60 can be arranged in first area 1 as shown in Figure 1, that is, setting is in place In the second opening 42 in first area 1.
According to an exemplary embodiment of the present disclosure, micro-led 60 may include being sequentially formed at first electrode 20 On the first conductive type semiconductor layer, active layer and second conductive type semiconductor layer.For example, the first conductive type semiconductor Layer is p type semiconductor layer, and second conductive type semiconductor layer is n type semiconductor layer;Or first conductive type semiconductor Layer is n type semiconductor layer, and second conductive type semiconductor layer is p type semiconductor layer.
Next, forming second electrode 70 on multiple organic luminous layers 50 and multiple micro-led 60, such as scheme 2。
Second electrode 70 is located on multiple organic luminous layers 50 and multiple micro-led 60, and connects with their electricity Touching.According to an exemplary embodiment of the present disclosure, for example, second electrode 70 can be used as public electrode by multiple organic luminous layers 50 It is shared with multiple micro-led 60.In addition, according to an exemplary embodiment of the present disclosure, second electrode 70 may be used as Cathode
According to an exemplary embodiment of the present disclosure, by micro-led 60 be formed in it is multiple opening 40 in it is multiple After in second opening 42, as shown in Fig. 5-3, encapsulated layer 90 can be formed in the second opening 42, wherein encapsulated layer 90 is the Micro-led 60 a part is encapsulated in two openings 42 (that is, one of side surface of encapsulating micro-led 60 Point) and exposure micro-led 60 separate substrate 10 side.Here, encapsulated layer 90 at least encapsulates the first conduction type Semiconductor layer and active layer (that is, side surface of encapsulating the first conductive type semiconductor layer and active layer), to avoid second electrode 70 electrical contact active layers and the first conductive type semiconductor layer.In addition, encapsulated layer 90 for example can be by pecvd process come shape At.
According to an exemplary embodiment of the present disclosure, multiple second openings of the transfer printing process in multiple openings 40 can be passed through Multiple micro-led 60 are formed in 42.It, can be by bonded layer 80 and micro-led 60 1 in transfer process It rises and is transferred in the second opening 42, to pass through bonded layer 80 for micro-led 60 and 20 electric coupling of first electrode.
Fig. 6 is schematically shown the micro-led signal being arranged in display panel through transfer printing process Figure.
As shown in Figure 6, epitaxy can be tipped upside down in carrier substrates (1) first;Remove the former substrate (2) of wafer;Into Row etching is to obtain micro-led array (3);Using the transfer head array made by array processes (such as institute in figure Show, by interlacing pick up in the way of) by it is micro-led transfer and be placed on panel (4).
Those skilled in the art are that clearly, will no longer repeat here to transfer printing process.In addition, those skilled in the art Member is also clear to used transfer head, therefore will not also repeated here.
The exemplary embodiment of the disclosure additionally provides a kind of display device.The display device include above-mentioned display panel with And driving circuit.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to its of the disclosure His embodiment.This application is intended to cover any variations, uses, or adaptations of the disclosure, these modifications, purposes or Adaptive change follow the general principles of this disclosure and including the undocumented common knowledge in the art of the disclosure or Conventional techniques.The description and examples are only to be considered as illustrative, and the true scope and spirit of the disclosure are by claim It points out.
It should be understood that the present disclosure is not limited to the precise structures that have been described above and shown in the drawings, and And various modifications and changes may be made without departing from the scope thereof.The scope of the present disclosure is only limited by the attached claims.

Claims (12)

1. a kind of display panel, comprising:
Substrate;
Multiple first electrodes are located on the substrate;
Pixel confining layer is located in the multiple first electrode and substrate, and has the multiple of the multiple first electrode of exposure Opening;
Multiple organic luminous layers, in the multiple opening it is multiple first opening in;
It is multiple micro-led, in multiple second openings in the multiple opening;And
Second electrode, be located at the multiple organic luminous layer and it is the multiple it is micro-led on.
2. display panel according to claim 1, wherein micro-led to be electrically coupled to the first electricity by bonded layer Pole.
3. display panel according to claim 1, further includes:
Encapsulated layer encapsulates micro-led a part in the opening and exposes micro-led separate substrate Side.
4. display panel according to claim 3, wherein micro-led includes sequentially forming on the first electrode The first conductive type semiconductor layer, active layer and second conductive type semiconductor layer, encapsulated layer at least encapsulates the first conductive-type Type semiconductor layer and active layer.
5. display panel according to claim 1, wherein the multiple first opening is located at the first area of the substrate In, and the first area includes one or more first subregions separated from each other.
6. display panel according to claim 5, wherein the multiple second opening is located at the second area of the substrate In, and the second area includes one or more second subregions separated from each other.
7. a kind of display device, including display panel described in any one of claim 1-6.
8. a kind of manufacturing method of display panel, comprising:
Multiple first electrodes are formed on substrate;
Pixel confining layer is formed on the multiple electrode and substrate, wherein pixel confining layer has exposure the multiple first Multiple openings of electrode;
Multiple organic luminous layers are formed in multiple first openings in the multiple opening;
It is formed in multiple second openings in the multiple opening multiple micro-led;And
In the multiple organic luminous layer and the multiple micro-led upper formation second electrode.
9. the manufacturing method of display panel according to claim 8, wherein through transfer printing process in the multiple opening It is the multiple second opening in formed it is the multiple micro-led.
10. the manufacturing method of display panel according to claim 9, wherein opened by transfer printing process the multiple In mouthful the multiple second in when forming the multiple micro-led, by bonded layer with it is micro-led together Be transferred in the second opening, with by bonded layer by micro-led with first electrode electric coupling.
11. the manufacturing method of display panel according to claim 8, further includes:
Encapsulated layer in the second opening, wherein encapsulated layer encapsulates micro-led a part and exposure miniature luminous two The side of the separate substrate of pole pipe.
12. the manufacturing method of display panel according to claim 11, wherein micro-led includes sequentially forming The first conductive type semiconductor layer, active layer and second conductive type semiconductor layer on the first electrode, encapsulated layer are formed It is at least to encapsulate the first conductive type semiconductor layer and active layer.
CN201811472203.5A 2018-12-04 2018-12-04 The manufacturing method of display panel, display device and display panel Pending CN109616499A (en)

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