CN109610002A - Inorganic compound, its purposes and preparation as non-linear optical crystal material - Google Patents
Inorganic compound, its purposes and preparation as non-linear optical crystal material Download PDFInfo
- Publication number
- CN109610002A CN109610002A CN201811443251.1A CN201811443251A CN109610002A CN 109610002 A CN109610002 A CN 109610002A CN 201811443251 A CN201811443251 A CN 201811443251A CN 109610002 A CN109610002 A CN 109610002A
- Authority
- CN
- China
- Prior art keywords
- sns
- preparation
- inorganic compound
- crystal
- basns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 70
- 230000003287 optical effect Effects 0.000 title claims abstract description 51
- 150000002484 inorganic compounds Chemical class 0.000 title claims abstract description 23
- 229910010272 inorganic material Inorganic materials 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims description 13
- 238000004321 preservation Methods 0.000 claims description 8
- 238000002425 crystallisation Methods 0.000 claims description 5
- WHBHBVVOGNECLV-OBQKJFGGSA-N 11-deoxycortisol Chemical compound O=C1CC[C@]2(C)[C@H]3CC[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 WHBHBVVOGNECLV-OBQKJFGGSA-N 0.000 claims description 4
- 230000005670 electromagnetic radiation Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 230000002269 spontaneous effect Effects 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000004927 fusion Effects 0.000 claims 2
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 229910013321 LiB3O5 Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical group [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of inorganic compound, chemical formula K2BaSnS4, belong to hexagonal crystal system, space group R3c, cell parameter are as follows: α=β=90 °, γ=120 °, Z=18.The inorganic compound is a kind of infrared nonlinear optical crystal K2BaSnS4, big with nonlinear optical effect, transparency range is wide, physical and chemical performance is stable, hardness is larger, good mechanical property, not easily broken, is not easy to deliquesce, easy to process and the advantages that save.The invention also discloses the preparation of the inorganic compound and applications.
Description
Technical field
The present invention relates to novel nonlinear optical crystals.More particularly, to a kind of inorganic compound, inorganic compound,
Its purposes and preparation as non-linear optical crystal material.
Background technique
Crystal with nonlinear optical effect is known as nonlinear optical crystal.Here nonlinear optical effect refers to again
Frequently with frequency, difference frequency, parameter amplification etc. effects.Only the crystal without symmetrical centre has been likely to nonlinear optical effect.Benefit
With the nonlinear optical effect of crystal, second harmonic generator, upper and lower frequency converter, optical parametric oscillator etc. can be made
Device for non-linear optical.The laser that laser generates can carry out frequency conversion by device for non-linear optical, to obtain more
The laser of useful wavelength, makes laser be more widely used.According to the difference of material application band, ultraviolet light can be divided into
Area, visible and near-infrared region and mid-infrared light area nonlinear optical material three categories.Visible region and ultraviolet region it is non-
Linear optical crystal material has been able to satisfy the requirement of practical application；It is such as practical in two frequencys multiplication (532nm) crystal mainly to have
KTP(KTiOPO4)、BBO(β-SnB2O4)、LBO(LiB3O5) crystal；In frequency tripling (355nm) crystal it is practical have BBO,
LBO、CBO(CsB3O5) available.And the nonlinear crystal development of infrared band is slow；The material of infrared light district is mostly
ABC2The chalcopyrite structure semiconductor material of type, such as AgGaQ2(Q=S, Se, Te), the light injury threshold of infrared non-linear crystal is too
Low and crystal growth is difficult, directly affects actual use.Middle infrared band nonlinear optical crystal has in optoelectronic areas
Important application, for example, it can by the means such as optical parametric oscillation or optically erasing by the laser of near infrared band (such as
1.064 μm) extend to middle infrared；It can also be with important laser (such as CO of centering infrared light district2Laser, 10.6 μm) it carries out again
Frequently, this is of great significance for obtaining the continuously adjustable laser of wavelength.Therefore the novel infrared non-linear of excellent performance is found
Optical crystal material has become one of difficult point and forward position direction of current nonlinear optical material research field.
Accordingly, it is desirable to provide a kind of new nonlinear crystal and preparation method thereof, to solve above-mentioned technical problem.
Summary of the invention
The first purpose of this invention is to provide a kind of inorganic compound, which is a kind of infrared non-thread
Property optical crystal K2BaSnS4, it is big with nonlinear optical effect, transparency range is wide, physical and chemical performance is stable, hardness compared with
Greatly, good mechanical property, it is not easily broken, be not easy to deliquesce, it is easy to process and save the advantages that.
Second object of the present invention is to provide a kind of method for preparing above-mentioned inorganic compound, be prepared using this method
Obtain nonlinear optical crystal K2BaSnS4During, crystal is easily grown up and transparent no package, and have the speed of growth very fast, at
The advantages that this is low, is easy to get larger size (size reaches Centimeter Level or more) nonlinear optical crystal.
Third object of the present invention is to provide another method for preparing above-mentioned inorganic compound, using party's legal system
It is standby to obtain nonlinear optical crystal K2BaSnS4During, crystal is easily grown up and transparent no package, and have the speed of growth very fast,
It is at low cost, the advantages that being easy to get larger size (size reaches Centimeter Level or more) nonlinear optical crystal.
Fourth object of the present invention is to provide the purposes of above-mentioned inorganic compound.
In order to achieve the above first purpose, the present invention provides a kind of inorganic compound, chemical formula K2BaSnS4, belong to six
Prismatic crystal system, space group R3c, cell parameter are as follows:α=β=90 °, γ=
120 °, Z=18.
To reach above-mentioned second purpose, the present invention provides a kind of preparation method of above-mentioned inorganic compound, and this method is adopted
It is prepared with high-temperature fusant spontaneous crystallization method, the raw mixture containing K element, Ba element, Sn element and S element is heated to melting
Change completely, is obtained room temperature is cooled to again after the heat preservation of obtained pyrosol；
In the raw mixture, the molar ratio of K element, Ba element, Sn element and S element are as follows:
K:Ba:Sn:S=2:1:1:4.
In the preparation method, melting complete temperature can be between 750-950 DEG C；Heat preservation refers to the temperature when melting complete
Degree is kept the temperature.Soaking time is preferably 24-96 hours, to guarantee that reactant reaction is abundant.
Preferably, the rate of the cooling is 1-10 DEG C/h；More preferably 1-6 DEG C/h, most preferably 4 DEG C/small
When, to guarantee that crystal quality obtained is good.
Preferably, K element comes from K or K in the raw mixture2S or K2S3；Ba element comes from Ba or BaS；Sn element
From Sn or SnS or SnS2；S element comes from simple substance S, K2S、K2S3, BaS, SnS and SnS2At least one of.
Preferably, heating rate when being heated to melting complete is 1-4 DEG C/min, and heating rate needs slowly, to obtain
Obtain the better product of form.
In the preparation method, when each element is selected from above-mentioned different element in raw mixture, the crystal is generated
Chemical equation respectively include but be not limited to as following formula it is various shown in:
1) 2K+Ba+Sn+4S=K2BaSnS4；
2)K2S+Ba+Sn+3S=K2BaSnS4；
3)K2S3+ Ba+Sn+S=K2BaSnS4；
4) 2K+BaS+Sn+3S=K2BaSnS4；
5)K2S+BaS+Sn+2S=K2BaSnS4；
6)K2S3+ BaS+Sn=K2BaSnS4；
7) 2K+Ba+SnS+3S=K2BaSnS4；
8)2K+Ba+SnS2+ 2S=K2BaSnS4；
9)K2S+Ba+SnS+2S=K2BaSnS4；
10)K2S3+ Ba+SnS=K2BaSnS4；
11)K2S+Ba+SnS2+ S=K2BaSnS4；
12) 2K+BaS+SnS+2S=K2BaSnS4；
13)K2S+BaS+SnS+S=K2BaSnS4；
14)2K+BaS+SnS2+ S=K2BaSnS4；
15)K2S+BaS+SnS2=K2BaSnS4。
To reach above-mentioned third purpose, the present invention provides another method for preparing above-mentioned inorganic compound, this method
It is prepared using Bridgman-Stockbarger method, the raw mixture containing K element, Ba element, Sn element and S element is placed in crystal growth dress
It in setting, is heated to fusing completely, crystal growing apparatus is vertically declined, crystallization obtains during vertical decline；
In the raw mixture, the molar ratio of K element, Ba element, Sn element and S element are as follows:
K:Ba:Sn:S=2:1:1:4.
Preferably, during being heated to fusing completely, the rate of heat addition should be slow, is advisable with 1 DEG C/min, to guarantee
Reaction is abundant.
Preferably, crystal growing apparatus includes but is not limited to quartz glass tube.
Preferably, in the preparation method, melting complete temperature can be between 750-950 DEG C.
In the preparation method, crystal growth during vertical decline.Preferably, the rate vertically declined is
0.1-10mm/h, more preferably 0.5mm/h, to guarantee that crystal quality obtained is good.
Preferably, the time vertically declined is 5-20 days.
Preferably, K element comes from K or K in the raw mixture2S or K2S3；Ba element comes from Ba or BaS；Sn element
From Sn or SnS or SnS2；S element comes from simple substance S, K2S、K2S3, BaS, SnS and SnS2At least one of.
Preferably, heating rate when being heated to melting complete is 1-4 DEG C/min, and heating rate needs slowly, to obtain
Obtain the better product of form.
To reach above-mentioned 4th purpose, the present invention provides above-mentioned inorganic compound as non-linear optical crystal material
Purposes.
According to the crystallography data of above-mentioned inorganic compound (namely nonlinear optical crystal), crystal boule is oriented, is pressed
Required angle, thickness and sectional dimension sliced crystal, crystal light pass surface is polished, and can be used as device for non-linear optical use.
A kind of device for non-linear optical, comprising at least a branch of incidence electromagnetic radiation is passed through at least one piece of nothing as described above
The device of output radiation of at least a branch of frequency different from the incidence electromagnetic radiation is generated after machine compound.
The device for non-linear optical can be a times frequency generator, upper and lower frequency converter, optical parametric oscillator.Optical parameter
Amplifier etc..
Beneficial effects of the present invention are as follows:
Inorganic compound of the invention is infrared nonlinear optical crystal K2BaSnS4, and can have biggish size (up to li
Meter level or more) have nonlinear optical effect is big, transparency range is wide, physical and chemical performance is stable, hardness is larger, mechanical performance
It is good, it is not easily broken, it is not easy to deliquesce, it is easy to process and the advantages that save.
The method that of the invention two kinds prepare the inorganic compound can get larger size (up to Centimeter Level or more)
The infrared nonlinear optical crystal, and rate of crystalline growth is fast, preparation cost is low.
Detailed description of the invention
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing.
Fig. 1 shows the nonlinear optical crystal K that the embodiment of the present invention 1 is prepared2BaSnS4The structural schematic diagram of crystal.
Fig. 2 shows use nonlinear optical crystal of embodiment of the present invention K2BaSnS4The nonlinear optics that crystal is prepared
The working principle diagram of device, in which: 1 is laser, and 2 be incoming laser beam, and 3 be after crystal post-processing and optical manufacturing
K2BaSnS4Nonlinear optical crystal, 4 be generated shoot laser beam, and 5 be filter plate.
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further below with reference to preferred embodiments and drawings
It is bright.Similar component is indicated in attached drawing with identical appended drawing reference.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
Embodiment 1
Nonlinear optical crystal K is prepared using high-temperature fusant spontaneous crystallization method2BaSnS4Crystal includes the following steps:
Weigh 1.103 grams of K2S, 1.694 grams of BaS and 1.828 gram of SnS2(i.e. K2S:BaS:SnS2=0.01mol:
0.01mol:0.01mol), after evenly mixing, it is fitted into the quartz glass tube of Φ 12mm × 20mm, is evacuated to 10-3After pa, use
Oxyhydrogen flame is packaged and placed in tubular type growth furnace, rises to 950 DEG C with 1 DEG C/min, constant temperature 72 hours, slow with the rate of 1 DEG C/h
It is cooled to room temperature, closes tubular type growth furnace；It is cut after quartz ampoule is cooling, obtains colourless not easily broken, be not easy to deliquesce, be easy to
It cuts, the K of polishing and preservation2BaSnS4Crystal.
Embodiment 2
Nonlinear optical crystal K is prepared using Bridgman-Stockbarger method2BaSnS4Crystal includes the following steps:
Weigh 1.103 grams of K2S, 1.694 grams of BaS and 1.828 gram of SnS2(i.e. K2S:BaS:SnS2=0.01mol:
0.01mol:0.01mol), after evenly mixing, it is fitted into the quartz glass tube of Φ 25mm × 200mm, is evacuated to 10-3After pa,
It is packaged and placed in crystal growing furnace with oxyhydrogen flame, rising to 950 DEG C with 1 DEG C/min makes melting sources, after raw material is completely melt,
Growth furnace is vertically declined with the speed of 0.5mm/h；After crystal growth, grower was down to room temperature with 50 hours, obtained nothing
Color it is not easily broken, be not easy to deliquesce, the K of easy to cut, polishing and preservation2BaSnS4Crystal.
Embodiment 3
Repeat embodiment 1, difference is, rate of temperature fall is changed to 4 DEG C/h, remaining condition is constant, be prepared it is colourless not
Easy fragmentation is not easy to deliquesce, easy to cut, polishing and preservation K2BaSnS4Crystal.
Embodiment 4
Embodiment 2 is repeated, difference is, the rate vertically declined is changed to 1mm/h, remaining condition is constant, and nothing is prepared
Color it is not easily broken, be not easy to deliquesce, the K of easy to cut, polishing and preservation2BaSnS4Crystal.
After tested, K prepared by the various embodiments described above2BaSnS4Nonlinear optical crystal category hexagonal crystal system, space group are
R3c, cell parameter are as follows:α=β=90 °, γ=120 °, Z=18, With frequency-doubled effect, transparency range is 0.4-13 μm, and size has reached Centimeter Level；Fig. 1 is this
K2BaSnS4The structural schematic diagram of nonlinear optical crystal.
Embodiment 5
The crystal that above-described embodiment is prepared is used to prepare device for non-linear optical, and the working principle diagram of the device is such as
Shown in Fig. 2.Wherein: 1 is laser, and 2 be incoming laser beam, and 3 be the K after crystal post-processing and optical manufacturing2BaSnS4It is non-thread
Property optical crystal, 4 be generated shoot laser beam, and 5 be filter plate.Working principle are as follows: incoming laser beam is issued by laser 1
2 inject K2BaSnS4Monocrystal 3, generated shoot laser beam 4 is by filter plate 5, and laser beam required for obtaining.
The K that embodiment 1 is obtained2BaSnS4Crystal be used for the device for non-linear optical, at room temperature, with adjust Q Ho:Tm:
Cr:YAG laser light source, incident wavelength are the infrared light of 2090nm, and output wavelength is the frequency doubled light of 1045nm, laser intensity
For AgGaS under the same terms20.5 times.The crystal that other each embodiments are prepared is used to prepare device for non-linear optical,
Obtained result is similar.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is all to belong to this hair
The obvious changes or variations that bright technical solution is extended out are still in the scope of protection of the present invention.
Claims (10)
1. a kind of inorganic compound, which is characterized in that its chemical formula is K2BaSnS4, belong to hexagonal crystal system, space group R3c, structure cell
Parameter are as follows:α=β=90 °, γ=120 °, Z=18.
2. the preparation method of inorganic compound as described in claim 1, which is characterized in that use high-temperature fusant spontaneous crystallization method
Raw mixture containing K element, Ba element, Sn element and S element is heated to fusing completely, the high temperature that will be obtained by preparation
Room temperature is cooled to again after solution heat preservation to obtain；
In the raw mixture, the molar ratio of K element, Ba element, Sn element and S element are as follows:
K:Ba:Sn:S=2:1:1:4.
3. preparation method according to claim 2, which is characterized in that the rate of the cooling is 1-10 DEG C/h；It is preferred that
It is 1-6 DEG C/h.
4. preparation method according to claim 2, which is characterized in that K element comes from K or K in the raw mixture2S or
K2S3；Ba element comes from Ba or BaS；Sn element comes from Sn or SnS or SnS2；S element comes from simple substance S, K2S、K2S3、BaS、SnS
And SnS2At least one of.
5. preparation method according to claim 2, which is characterized in that the fusion temperature is 750-950 DEG C, the heat preservation
Time is 24-96 hours.
6. the preparation method of inorganic compound as described in claim 1, which is characterized in that it is prepared using Bridgman-Stockbarger method, it will
Raw mixture containing K element, Ba element, Sn element and S element is placed in crystal growing apparatus, is heated to fusing completely,
Crystal growing apparatus is vertically declined, crystallization obtains during vertical decline；
In the raw mixture, the molar ratio of K element, Ba element, Sn element and S element are as follows:
K:Ba:Sn:S=2:1:1:4.
7. preparation method according to claim 6, which is characterized in that the fusion temperature is 750-950 DEG C；Preferably,
The rate vertically declined is 0.1-10mm/h, and the time is 5-20 days；It is highly preferred that the rate vertically declined is
0.5mm/h。
8. preparation method according to claim 2, which is characterized in that K element comes from K or K in the raw mixture2S or
K2S3；Ba element comes from Ba or BaS；Sn element comes from Sn or SnS or SnS2；S element comes from simple substance S, K2S、K2S3、BaS、SnS
And SnS2At least one of.
9. purposes of the inorganic compound as described in claim 1 as non-linear optical crystal material.
10. a kind of device for non-linear optical, which is characterized in that comprising at least a branch of incidence electromagnetic radiation is passed through at least one piece such as
Output radiation of at least a branch of frequency different from the incidence electromagnetic radiation is generated after inorganic compound described in claim 1
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811443251.1A CN109610002A (en) | 2018-11-29 | 2018-11-29 | Inorganic compound, its purposes and preparation as non-linear optical crystal material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811443251.1A CN109610002A (en) | 2018-11-29 | 2018-11-29 | Inorganic compound, its purposes and preparation as non-linear optical crystal material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109610002A true CN109610002A (en) | 2019-04-12 |
Family
ID=66006526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811443251.1A Pending CN109610002A (en) | 2018-11-29 | 2018-11-29 | Inorganic compound, its purposes and preparation as non-linear optical crystal material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109610002A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976287A (en) * | 2011-09-02 | 2013-03-20 | 中国科学院理化技术研究所 | BaGa2GeSe6 compound, BaGa2GeSe6 non-linear optical crystal and their preparation methods and use |
| CN103288058A (en) * | 2012-02-27 | 2013-09-11 | 中国科学院理化技术研究所 | Li2In2GeSe6 compound and Li2In2GeSe6 nonlinear optical crystal as well as preparation methods and applications thereof |
| CN105506743A (en) * | 2015-12-29 | 2016-04-20 | 中国科学院理化技术研究所 | Li6Cd5Sn4Se16 nonlinear optical crystal, and preparation method and application thereof |
| CN105951182A (en) * | 2016-05-23 | 2016-09-21 | 中国科学院福建物质结构研究所 | Infrared nonlinear optical crystal material, method for preparing same and application of infrared nonlinear optical crystal material |
| CN106435737A (en) * | 2016-09-18 | 2017-02-22 | 中国工程物理研究院化工材料研究所 | Infrared nonlinear optical crystal and preparation method thereof |
| CN106757366A (en) * | 2016-12-06 | 2017-05-31 | 中国科学院福建物质结构研究所 | A kind of crystalline material, its preparation method and the application in nonlinear optical crystal |
-
2018
- 2018-11-29 CN CN201811443251.1A patent/CN109610002A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976287A (en) * | 2011-09-02 | 2013-03-20 | 中国科学院理化技术研究所 | BaGa2GeSe6 compound, BaGa2GeSe6 non-linear optical crystal and their preparation methods and use |
| CN103288058A (en) * | 2012-02-27 | 2013-09-11 | 中国科学院理化技术研究所 | Li2In2GeSe6 compound and Li2In2GeSe6 nonlinear optical crystal as well as preparation methods and applications thereof |
| CN105506743A (en) * | 2015-12-29 | 2016-04-20 | 中国科学院理化技术研究所 | Li6Cd5Sn4Se16 nonlinear optical crystal, and preparation method and application thereof |
| CN105951182A (en) * | 2016-05-23 | 2016-09-21 | 中国科学院福建物质结构研究所 | Infrared nonlinear optical crystal material, method for preparing same and application of infrared nonlinear optical crystal material |
| CN106435737A (en) * | 2016-09-18 | 2017-02-22 | 中国工程物理研究院化工材料研究所 | Infrared nonlinear optical crystal and preparation method thereof |
| CN106757366A (en) * | 2016-12-06 | 2017-05-31 | 中国科学院福建物质结构研究所 | A kind of crystalline material, its preparation method and the application in nonlinear optical crystal |
Non-Patent Citations (1)
| Title |
|---|
| KUI WU ET AL.: "Na2BaMQ4 (M=Ge, Sn; Q=S, Se)_ Infrared Nonlinear Optical Materials with Excellent Performances and that Undergo Structural Transformations", 《ANGEW. CHEM. INT. ED.》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105113005B (en) | BaHgSe2Nonlinear optical crystal and preparation method and purposes | |
| CN101767778B (en) | BaCa4Se7 compound, BaCa4Se7 nonlinear optical crystal, preparation method and application | |
| CN105506743B (en) | A kind of Li6Cd5Sn4Se16Nonlinear optical crystal and its preparation method and purposes | |
| CN102976287B (en) | BaGa2GeSe6 compound, BaGa2GeSe6 non-linear optical crystal and their preparation methods and use | |
| CN102838093B (en) | LiGaGe2Se6 compound, LiGaGe2Se6 nonlinear optical crystals, and preparation method and application thereof | |
| CN103288058B (en) | Li2In2GeSe6 compound and Li2In2GeSe6 nonlinear optical crystal as well as preparation methods and applications thereof | |
| CN107021462A (en) | Selenium gallium zinc barium compound, selenium gallium zinc barium infrared nonlinear optical crystal and its production and use | |
| CN103290480B (en) | Li 2in 2siS 6compound, Li 2in 2siS 6non-linear optic crystal and method for making and purposes | |
| CN103058266A (en) | BaGa2GeS6 compound, BaGa2GeS6 nonlinear optical crystal, and preparation method and application thereof | |
| CN103290478B (en) | Li 2in 2geS 6compound, Li 2in 2geS 6non-linear optic crystal and method for making and purposes | |
| US11932965B2 (en) | Nonlinear optical crystal, method for preparing the same and application thereof | |
| CN103060917B (en) | BaGa 2siS 6compound, BaGa 2siS 6non-linear optic crystal and method for making and purposes | |
| CN105350082B (en) | A kind of Na2In2GeSe6Nonlinear optical crystal and preparation method and purposes | |
| CN109518279A (en) | SrHgGeSe4Nonlinear optical crystal, its preparation and application | |
| CN105543970B (en) | Li7Cd4.5Ge4Se16Nonlinear optical crystal and preparation method and purposes | |
| CN105543971B (en) | A kind of AgZnPS4Nonlinear optical crystal and preparation method thereof and device for non-linear optical | |
| CN103290479B (en) | Li 2in 2siSe 6compound, Li 2in 2siSe 6non-linear optic crystal and method for making and purposes | |
| CN104649271A (en) | KYSiS4 compound, KYSiS4 nonlinear optical crystal, preparation method and application | |
| CN103030146B (en) | BaGa2SiSe6 compound, BaGa2SiSe6 nonlinear optical crystal and preparation method and application | |
| CN109610002A (en) | Inorganic compound, its purposes and preparation as non-linear optical crystal material | |
| CN109518267A (en) | SrHgSnSe4Nonlinear optical crystal, its preparation and application | |
| CN105063756A (en) | KYGeS4 non-linear optical crystal and growth method and application thereof | |
| CN107217302B (en) | Selenium antimony gallium barium compound, selenium antimony gallium barium infrared nonlinear optical crystal and its preparation method and application | |
| CN109656079A (en) | A kind of BaHgSnS4The purposes of nonlinear optical crystal | |
| CN105753041B (en) | A kind of LiGaGe2S6Compound and LiGaGe2S6Nonlinear optical crystal and preparation method and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190412 |
|
| RJ01 | Rejection of invention patent application after publication |