CN109607499B - Marginal nitrogen vacancy g-C3N4Photocatalyst and preparation method thereof - Google Patents
Marginal nitrogen vacancy g-C3N4Photocatalyst and preparation method thereof Download PDFInfo
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- VZGDMQKNWNREIO-UHFFFAOYSA-N carbon tetrachloride Substances ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000011941 photocatalyst Substances 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000010453 quartz Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000001035 drying Methods 0.000 claims abstract description 13
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims abstract description 8
- 229920000877 Melamine resin Polymers 0.000 claims abstract description 7
- 238000005406 washing Methods 0.000 claims abstract description 5
- 239000003054 catalyst Substances 0.000 claims abstract description 4
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims abstract description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 230000035484 reaction time Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 20
- 239000000463 material Substances 0.000 abstract description 16
- 230000001699 photocatalysis Effects 0.000 abstract description 9
- 230000003197 catalytic effect Effects 0.000 abstract description 6
- 230000031700 light absorption Effects 0.000 abstract description 5
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052573 porcelain Inorganic materials 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/0605—Binary compounds of nitrogen with carbon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/24—Nitrogen compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
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- C01—INORGANIC CHEMISTRY
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- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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Abstract
The invention belongs to the technical field of preparation of graphite-like phase carbon nitride, and particularly relates to a marginal nitrogen vacancy g-C3N4A photocatalyst and a preparation method thereof.The method comprises the following steps: (1) putting melamine or dicyandiamide in a quartz tube, and then introducing Ar/CCl4The mixed gas reacts at a set temperature; (2) after the reaction is finished, washing the product with water to remove impurities on the product, and drying to obtain g-C with marginal vacancy3N4A catalyst. The invention can regulate and control the defect concentration by adjusting the reaction conditions, further regulate and control the light absorption and catalytic activity of the material, and the regulation and control means is simple and easy to control; moreover, the invention can prepare g-C containing marginal nitrogen vacancy3N4Photocatalyst, greatly improves g-C3N4The photocatalytic performance of (a).
Description
Technical Field
The invention belongs to the technical field of preparation of graphite-like phase carbon nitride, and particularly relates to a marginal nitrogen vacancy g-C3N4A photocatalyst and a preparation method thereof.
Background
Currently, energy and environmental issues are two major problems facing human beings. Solar energy has a series of advantages of abundant reserves, low price, environmental protection and the like, and is gradually attracted by people as an inexhaustible new energy. In recent years, various high and new technologies based on solar energy utilization have attracted extensive attention from researchers in various countries around the world. The photocatalysis technology is a new technology which effectively utilizes solar energy resources and converts the solar energy resources into chemical energy, can decompose water into hydrogen and oxygen and solves the problems related to energy and environment. However, the popularization of the photocatalytic technology is severely limited by the performance of the catalyst, and defect regulation is widely applied to the modification of the photocatalytic material as an effective means. Therefore, the development of a new synthesis method, and the defect of effective regulation and control of materials becomes a necessary choice for improving the photocatalytic performance.
Graphite-like phase carbon nitride (g-C)3N4) Because of no metal, proper forbidden band position, effective visible light absorption efficiency, high stability, no toxicity, easy preparation and other advantages, the photocatalyst has attracted much attention in recent years. However, the conventional preparation method mostly adopts air or conventional atmospheres such as argon and hydrogen, the prepared material either lacks defect sites (under air and argon atmosphere) necessary for catalytic reaction or the defect sites are mainly located on the scarlet ring of the material (under hydrogen atmosphere), and the defect sites on the scarlet ring can damage the conjugated structure of the material, so that the large pi bond of the material is damaged.
In view of the foregoing, the prior art lacks an efficient way to produce more catalytically effective g-C3N4Defect sites, therefore, an efficient manufacturing process was developed to produce g-C with new defect sites3N4Has important scientific and engineering significance.
Disclosure of Invention
In view of the problems in the prior art, the invention aims to provide a marginal nitrogen vacancy g-C3N4A photocatalyst and a preparation method thereof. The invention can regulate and control the defect concentration by adjusting the reaction conditions, further regulate and control the light absorption and catalytic activity of the material, and the regulation and control means is simple and easy to control; moreover, the invention can prepare g-C containing marginal nitrogen vacancy3N4Photocatalyst, greatly improves g-C3N4The photocatalytic performance of (a).
The first object of the present invention: providing a marginal nitrogen vacancy g-C3N4A photocatalyst.
Second object of the invention: providing a marginal nitrogenVacancies g-C3N4A preparation method of the photocatalyst.
The third object of the present invention: providing the above marginal nitrogen vacancies g-C3N4A photocatalyst and an application of a preparation method thereof.
In order to realize the purpose, the invention discloses the following technical scheme:
firstly, the invention discloses a marginal nitrogen vacancy g-C3N4A photocatalyst of said g-C3N4The chemical structure of the photocatalyst is shown as formula 1:
as shown in formula 1, the lower right N atom is cut off to form a nitrogen vacancy, and the carbon atom connected with the N atom has a lone pair of electrons (shown by the solid dots in the figure), and the position of the vacancy is g-C3N4The marginal of the molecular structure, which is therefore called marginal nitrogen vacancy by the present invention, is prepared as g-C3N4Referred to as marginal nitrogen vacancy g-C3N4A photocatalyst. As shown in formula 2, conventional defect-free g-C3N4The border of the structure is occupied by amino groups.
The research of the invention finds that: in g-C3N4The method also has a potential defect site, namely a marginal nitrogen vacancy, as shown in the chemical structural formula, because the marginal nitrogen atom does not form a conjugated structure of the molecule, the conjugated structure of the material can not be damaged after the marginal nitrogen vacancy is removed, and sufficient catalytic active sites can be provided, and in addition, because electrons at the marginal nitrogen vacancy defect site have high local states, the carrier separation efficiency can be effectively improved.
Secondly, the invention discloses a marginal nitrogen vacancy g-C3N4The preparation method of the photocatalyst comprises the following steps:
(1) putting melamine or dicyandiamide in a quartz tube, and then introducing Ar/CCl4Mixed gas is reacted at a set temperature, wherein Ar gas is used as a carrier gas,mixing liquid CCl at room temperature4Bubbling into a reaction furnace as a gas, CCl4As reaction gases, whose decomposition products are chlorine radicals capable of reacting with melamine or oligomeric g-C3N4Reacting the amino group to remove the amino group, thereby forming a marginal nitrogen vacancy;
(2) after the reaction is finished, washing the product with water to remove impurities on the product, and drying to obtain g-C with marginal nitrogen vacancy3N4Catalyst, the vacancy defect sites being effective to increase carrier separation efficiency without destroying g-C3N4The local electrons formed by the conjugated structure can effectively improve the catalytic performance of the material.
In the step (1), the melamine and the introduced Ar/CCl4In a ratio of 1-10 g: 50-1000 sccm.
In the step (1), the set temperature is 450-700 ℃.
In the step (1), the reaction time is 1-10 h.
In the step (2), the washing time is 10min-5 h.
In the step (2), the drying temperature is 30-100 ℃.
In the step (2), the drying time is 1-5 h.
Finally, the invention discloses the marginal nitrogen vacancy g-C3N4The application of the photocatalyst and the preparation method thereof in the field of water decomposition.
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention mixes liquid CCl at room temperature4Bubbling into a reaction furnace as a gas, CCl4As reaction gases, whose decomposition products are chlorine radicals capable of reacting with melamine or oligomeric g-C3N4Reacting the amino group to remove the amino group, thereby forming a marginal nitrogen vacancy; the nitrogen vacancy does not damage the conjugated structure of the material, and can provide enough catalytic active sites and improve the carrier separation efficiency; meanwhile, the reaction condition of the invention is mild, and the invention is more suitable for mass preparation.
(2) g-C with marginal nitrogen vacancy prepared by the invention3N4(CCl4) Shows a clear advantage over defect-free g-C3N4(g-C3N4(Ar)), ring nitrogen vacancy (g-C)3N4(H2) The invention can regulate and control the defect concentration by adjusting the reaction condition, further regulate and control the light absorption and the catalytic activity of the material, and the regulation and control means is simple and easy to control.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application.
FIG. 1 is a graph of g-C prepared in example 1 of the present invention3N4(ii) diffuse reflectance absorption spectrum;
FIG. 2 shows g-C prepared in example 1 of the present invention3N4SEM image of (d).
FIG. 3 is a graph of g-C prepared in example 1 of the present invention3N4An infrared spectrum of (1).
FIG. 4 shows g-C prepared in example 1 of the present invention3N4C1 xps spectrum of (a).
FIG. 5 shows g-C prepared in example 1 of the present invention3N4(g-C3N4(CCl4) And defect-free g-C3N4(g-C3N4(Ar)), ring nitrogen vacancy (g-C)3N4(H2) PL luminescence spectra of (c).
FIG. 6 shows g-C prepared in example 1 of the present invention3N4(g-C3N4(CCl4) And defect-free g-C3N4(g-C3N4(Ar)), ring nitrogen vacancy (g-C)3N4(H2) Comparative plot of photocatalytic water splitting performance.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
As described in the background art, the material prepared by the conventional preparation method lacks necessary defect sites and the sites are mainly located on the scarlet ring of the material, and how to prepare other defect sites becomes a hotspot and difficulty of research. Therefore, the invention provides a marginal nitrogen vacancy g-C3N4The invention is further described with reference to the accompanying drawings and the specific embodiments.
Example 1
Marginal nitrogen vacancy g-C3N4The preparation method of the photocatalyst comprises the following steps:
(1) putting 5g of melamine powder into a porcelain boat, and then putting the porcelain boat into a quartz tube;
(2) the quartz tube was placed in a tube furnace and then heated at 100sccmAr/CCl4Reacting for 4 hours at 550 ℃ in atmosphere;
(3) stirring and cleaning the obtained product in deionized water for 30min to remove impurities, and drying at 50 ℃ for 4h to obtain marginal nitrogen vacancy g-C3N4。
FIG. 1 shows g-C prepared in this example3N4The diffuse reflection absorption spectrum of the product shows that the prepared product has strong visible light absorption (the absorption band edge is expanded to about 450 nm), and has slope-shaped trailing absorption at about 500nm, and the absorption is generated by an impurity energy band caused by defects, which indicates the successful preparation of the defects.
FIG. 2 shows g-C prepared in this example3N4SEM picture of (1), it can be seen thatThe prepared material is a blocky structure formed by stacking nano sheets, and is similar to the traditionally prepared g-C3N4The crystal has similar morphological structure, and shows that the introduction of the defects does not cause the change of the morphology, so the specific surface area does not change greatly, and the corresponding improvement of the activity is attributed to the introduction of defect sites rather than the improvement of the specific surface area.
FIG. 3 shows g-C prepared in this example3N4The infrared absorption spectrum of the film has strong infrared absorption peak and is similar to the standard g-C3N4The infrared spectrograms are consistent, which shows that the prepared g-C with marginal nitrogen vacancy3N4Having a basic g-C3N4The skeleton structure, and therefore the conjugated structure of the material body, is unchanged.
FIG. 4 shows g-C prepared in this example3N4The C1sXPS spectrum of (A) shows that the area of the marginal nitrogen atom peak (located at 289.2 eV) is small, indicating that the marginal nitrogen vacancy is successfully manufactured.
FIG. 5 shows g-C prepared in example 1 of the present invention3N4(g-C3N4(CCl4) PL emission spectrum and defect-free g-C of3N4(g-C3N4(Ar)), ring nitrogen vacancy (g-C)3N4(H2) Comparative images of g-C with marginal nitrogen vacancies as can be seen3N4(g-C3N4(CCl4) Having a significantly lower g-C than defect-free3N4(g-C3N4(Ar)), ring nitrogen vacancy (g-C)3N4(H2) A peak intensity of about g-C without defects3N4(g-C3N4(Ar)) 1/3 of the ring nitrogen vacancies (g-C)3N4(H2) 1/2) of (b), because the strong direct peak of the PL spectrum indicates recombination of carriers (the stronger the peak the more recombination), g-C with marginal nitrogen vacancies3N4(g-C3N4(CCl4) Lower peak intensity indicates higher carrier separation efficiency.
FIG. 6 shows an embodiment of the present inventiong-C prepared in example 13N4(g-C3N4(CCl4) Photocatalytic water splitting performance with defect-free g-C3N4(g-C3N4(Ar)), ring nitrogen vacancy (g-C)3N4(H2) Comparative images of g-C with marginal nitrogen vacancies can be seen3N4(CCl4) Shows a clear advantage over defect-free g-C3N4(g-C3N4(Ar)), ring nitrogen vacancy (g-C)3N4(H2) Photocatalytic activity (8 times g-C)3N4(g-C3N4(Ar), 1.5 times of g-C3N4(H2)). The improvement in performance may be attributed to the introduction of defect energy levels providing reaction site and carrier separation efficiency, and the localized electrons at the defect sites improving the reduction capability of the electrons.
Example 2
g-C3N4The marginal nitrogen vacancy and the preparation method thereof comprise the following steps:
(1) 3g of melamine powder was put into a porcelain boat, and then the porcelain boat was put into a quartz tube.
(2) The quartz tube was placed in a tube furnace and then heated at 150sccmAr/CCl4The reaction is carried out for 4h at the temperature of 550 ℃ under the atmosphere.
(3) Stirring and cleaning the obtained product in deionized water for 60min to remove impurities, and drying at 30 ℃ for 5h to obtain marginal nitrogen vacancy g-C3N4。
Example 3
g-C3N4The marginal nitrogen vacancy and the preparation method thereof comprise the following steps:
(1) 10g of melamine powder was put into a porcelain boat, and then the porcelain boat was put into a quartz tube.
(2) The quartz tube was placed in a tube furnace and then heated at 50sccmAr/CCl4The reaction is carried out for 1h at the temperature of 700 ℃.
(3) Stirring and cleaning the obtained product in deionized water for 2h to remove impurities, and drying at 100 ℃ for 1h to obtain marginal nitrogen vacancy g-C3N4。
Example 4
g-C3N4The marginal nitrogen vacancy and the preparation method thereof comprise the following steps:
(1) 1g of melamine powder was put into a porcelain boat, and then the porcelain boat was put into a quartz tube.
(2) The quartz tube was placed in a tube furnace and then heated at 1000sccmAr/CCl4The reaction is carried out for 2h at the temperature of 550 ℃ under the atmosphere.
(3) Stirring and cleaning the obtained product in deionized water for 10min to remove impurities, and drying at 60 ℃ for 3h to obtain marginal nitrogen vacancy g-C3N4。
Example 5
g-C3N4The marginal nitrogen vacancy and the preparation method thereof comprise the following steps:
(1) 5g of melamine powder was put into a porcelain boat, and then the porcelain boat was put into a quartz tube.
(2) The quartz tube was placed in a tube furnace and then heated at 100sccmAr/CCl4Reacting for 10 hours at the temperature of 450 ℃ in the atmosphere.
(3) Stirring and cleaning the obtained product in deionized water for 3h to remove impurities, and drying at 50 ℃ for 3h to obtain marginal nitrogen vacancy g-C3N4。
Example 6
g-C3N4The marginal nitrogen vacancy and the preparation method thereof comprise the following steps:
(1) 2g of melamine powder was put into a porcelain boat, and then the porcelain boat was put into a quartz tube.
(2) The quartz tube was placed in a tube furnace and then heated at 200sccmAr/CCl4Reacting for 6 hours at the atmosphere of 500 ℃.
(3) Stirring and cleaning the obtained product in deionized water for 5h to remove impurities, and drying at 70 ℃ for 2h to obtain marginal nitrogen vacancy g-C3N4。
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (9)
1. Marginal nitrogen vacancy g-C3N4A photocatalyst, characterized in that: the g to C3N4The chemical structure of the photocatalyst is shown as formula 1:
2. marginal nitrogen vacancy g-C3N4The preparation method of the photocatalyst is characterized by comprising the following steps: the method comprises the following steps:
(1) putting melamine or dicyandiamide in a quartz tube, and then introducing Ar/CCl4The mixed gas reacts at a set temperature;
(2) after the reaction is finished, washing the product with water to remove impurities on the product, and drying to obtain g-C with marginal vacancy3N4A catalyst.
3. The marginal nitrogen vacancy g-C of claim 23N4The preparation method of the photocatalyst is characterized by comprising the following steps: in the step (1), the melamine and the introduced Ar/CCl4In a ratio of 1-10 g: 50-1000 sccm.
4. The marginal nitrogen vacancy g-C of claim 23N4The preparation method of the photocatalyst is characterized by comprising the following steps: in the step (1), the set temperature is 450-700 ℃.
5. The marginal nitrogen vacancy g-C of claim 23N4The preparation method of the photocatalyst is characterized by comprising the following steps: in the step (1), the reaction time is 1-10 h.
6. The marginal nitrogen vacancy g-C of claim 23N4The preparation method of the photocatalyst is characterized by comprising the following steps: in the step (2), the washing time is 10min-5 h.
7. The marginal nitrogen vacancy g-C of claim 23N4The preparation method of the photocatalyst is characterized by comprising the following steps: in the step (2), the drying temperature is 30-100 ℃.
8. The marginal nitrogen vacancy g-C of claim 23N4The preparation method of the photocatalyst is characterized by comprising the following steps: in the step (2), the drying time is 1-5 h.
9. The marginal nitrogen vacancy g-C of claim 13N4Application of photocatalyst in water decomposition field.
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| KR100866311B1 (en) * | 2007-04-16 | 2008-11-03 | 고려대학교 산학협력단 | Method for preparing n-rich nanoporous graphitic carbon nitride structure |
| CN107970966A (en) * | 2017-11-14 | 2018-05-01 | 肇庆市华师大光电产业研究院 | A kind of Fe2O3 doping is modified preparation of carbon nitride photocatalyst and its preparation method and application |
| CN108704660B (en) * | 2018-06-08 | 2021-03-26 | 西北师范大学 | Preparation and application of nitrogen vacancy modified oxygen-enriched titanium dioxide nano composite material |
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