CN109599413B - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN109599413B CN109599413B CN201710917624.3A CN201710917624A CN109599413B CN 109599413 B CN109599413 B CN 109599413B CN 201710917624 A CN201710917624 A CN 201710917624A CN 109599413 B CN109599413 B CN 109599413B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
Abstract
The embodiment of the invention provides a display panel and a display device. The display panel comprises an anode layer, a hole injection layer, an organic light emitting layer and a cathode layer which are sequentially arranged, wherein the organic light emitting layer comprises a first organic light emitting layer, a second organic light emitting layer and a third organic light emitting layer, and the first organic light emitting layer, the second organic light emitting layer and the third organic light emitting layer respectively correspond to a first sub-pixel, a second sub-pixel and a third sub-pixel; at least one of the first organic light emitting layer, the second organic light emitting layer, the third organic light emitting layer and the hole injection layer is doped with a voltage adjustment material, and the voltage adjustment material is used for changing the conductivity of the film layer doped with the voltage adjustment material so as to reduce the difference between the sum of the first sub-pixel, the second sub-pixel and the third sub-pixel and the lighting voltage. The technical scheme provided by the embodiment of the invention can improve low gray scale color cast and improve the display effect.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a display panel and a display device.
Background
Organic Light Emitting Displays (OLEDs) have advantages of wide viewing angle, high contrast, and high response speed, and are considered as next-generation Display devices.
An OLED generally includes an organic light emitting layer made of an organic light emitting material disposed between an anode electrode and a cathode electrode. When current is applied to the anode electrode, holes injected from the anode electrode move to the organic light emitting layer through the hole injection layer, electrons injected from the cathode electrode move to the organic light emitting layer, and the holes and the electrons act to cause the organic light emitting layer to emit light for display. Due to the characteristics of the materials, the mobility of each film material to holes or electrons is different. For example, the hole injection layer has high hole mobility, the material itself can conduct electricity in both the lateral and longitudinal directions, the red, green and blue sub-pixels have different lighting voltages, and when the sub-pixel with high lighting voltage is lighted, current conducts in the lateral direction of the hole injection layer, and the sub-pixel with low lighting voltage can be lighted slightly. This causes a certain degree of color distortion when the OLED is lit at a lower gray level, which is called as low gray level color shift, that is, when a sub-pixel of one color is lit singly, the sub-pixels of the other two colors may be lit by crosstalk current or TFT (Thin Film Transistor) leakage, which causes impurity of a single color and fails to display a desired color.
Disclosure of Invention
The invention provides a display panel and a display device, which aim to improve the low gray scale color cast and improve the display effect by improving the lighting voltage of sub-pixels in the display panel.
An embodiment of the present invention provides a display panel, including:
the organic light emitting diode comprises an anode layer, a hole injection layer, an organic light emitting layer and a cathode layer which are sequentially arranged, wherein the organic light emitting layer comprises a first organic light emitting layer, a second organic light emitting layer and a third organic light emitting layer, and the first organic light emitting layer, the second organic light emitting layer and the third organic light emitting layer respectively correspond to a first sub-pixel, a second sub-pixel and a third sub-pixel;
at least one of the first organic light emitting layer, the second organic light emitting layer, the third organic light emitting layer, and the hole injection layer is doped with a voltage adjustment material for changing conductivity of a film layer doped with the voltage adjustment material to reduce at least one of an absolute value of a difference between lighting voltages of the first sub-pixel and the second sub-pixel, an absolute value of a difference between lighting voltages of the first sub-pixel and the third sub-pixel, and an absolute value of a difference between lighting voltages of the second sub-pixel and the third sub-pixel.
The embodiment of the invention also provides a display device which comprises the display panel provided by any embodiment of the invention.
According to the display panel provided by the embodiment of the invention, the voltage adjusting material is doped in the corresponding film layer, the voltage adjusting material is used for changing the conductivity of the film layer doped with the voltage adjusting material, the lighting voltage difference among the first sub-pixel, the second sub-pixel and the third sub-pixel is reduced, the crosstalk current generated by the sub-pixel with higher lighting voltage can be reduced, the threshold of the sub-pixel with lower lighting voltage which is lighted by crosstalk current and/or TFT leakage current can be improved, the probability of the sub-pixel which is lighted by the crosstalk current is reduced, the required color is conveniently displayed, and the display effect is improved.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 2 is a comparison graph of the lighting voltage provided by the embodiment of the present invention;
FIG. 3 is a comparison graph of another ignition voltage provided by the embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another display panel provided in an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of another display panel according to an embodiment of the present invention
FIG. 6 is a schematic structural diagram of another display panel according to an embodiment of the present invention
Fig. 7 is a schematic diagram of a display device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention, and referring to fig. 1, the display panel includes an anode layer 11, a hole injection layer 12, an organic light emitting layer 13, and a cathode layer 14, which are sequentially disposed, the organic light emitting layer includes a first organic light emitting layer 131, a second organic light emitting layer 132, and a third organic light emitting layer 133, and the first organic light emitting layer 131, the second organic light emitting layer 132, and the third organic light emitting layer 133 correspond to a first sub-pixel, a second sub-pixel, and a third sub-pixel, respectively; the first sub-pixel, the second sub-pixel and the third sub-pixel are respectively one of a red sub-pixel, a green sub-pixel and a blue sub-pixel, for example, the first sub-pixel is a blue sub-pixel, the second sub-pixel is a green sub-pixel, and the third sub-pixel is a red sub-pixel.
At least one of the first organic light emitting layer 131, the second organic light emitting layer 132, the third organic light emitting layer 133 and the hole injection layer 12 is doped with a voltage adjusting material for changing conductivity of the film layer doped with the voltage adjusting material to reduce at least one of an absolute value of a difference between the lighting voltages of the first sub-pixel and the second sub-pixel, an absolute value of a difference between the lighting voltages of the first sub-pixel and the third sub-pixel, and an absolute value of a difference between the lighting voltages of the second sub-pixel and the third sub-pixel. That is, at least one of the hole injection layers 12 of the first, second, and third organic light emitting layers 131, 132, and 133 is doped with a voltage adjusting material. The hole injection layer 12 may be discrete, i.e., the hole injection layer 12 includes a plurality of divided units, each sub-pixel corresponding to a divided unit of the hole injection layer 12. The hole injection layer 12 may also be common, i.e. the hole injection layer 12 is a continuous layer. The anode layer 11 includes a plurality of anodes, each anode corresponding to one of the sub-pixels. The cathode layer may be a continuous layer, i.e. the cathode layer comprises one monolithic cathode.
In the embodiment of the invention, the display panel may include a substrate base plate, and a thin film transistor array and a storage capacitor located on the substrate base plate. The base substrate may be formed of any suitable insulating material having flexibility, that is, the base substrate may be a flexible substrate. For example, the flexible substrate may be formed of a polymer material such as Polyimide (PI), Polycarbonate (PC), Polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyarylate (PAR), or glass Fiber Reinforced Plastic (FRP). The substrate base plate may be transparent, translucent or opaque. Of course, the substrate may be a glass substrate, in which case the display panel is a rigid display panel that cannot be freely bent.
The buffer layer is positioned on the substrate base plate and covers the whole upper surface of the substrate base plate. The buffer layer includes an inorganic layer or an organic layer. For example, the buffer layer may be formed of a material selected from an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum oxide (AlOx), aluminum nitride (AlNx), or the like, or an organic material such as acryl (acryl), Polyimide (PI), polyester, or the like. The buffer layer may comprise a single layer or multiple layers. The buffer layer blocks oxygen and moisture, prevents diffusion of moisture or impurities through the flexible substrate, and provides a flat surface on an upper surface of the flexible substrate.
The thin film transistor array is positioned on the buffer layer. Taking a top gate type thin film transistor as an example, the thin film transistor includes a semiconductor active layer on a buffer layer, the semiconductor active layer including a source region and a drain region formed by doping N-type impurity ions or P-type impurity ions. A region between the source region and the drain region is a channel region in which impurities are not doped.
The semiconductor active layer may be formed by changing amorphous silicon into polycrystalline silicon through crystallization of amorphous silicon.
In order to crystallize amorphous silicon, various methods such as a Rapid Thermal Annealing (RTA) method, a Solid Phase Crystallization (SPC) method, an Excimer Laser Annealing (ELA) method, a Metal Induced Crystallization (MIC) method, a Metal Induced Lateral Crystallization (MILC) method, or a Sequential Lateral Solidification (SLS) method may be used.
The gate insulating layer covers the semiconductor active layer, includes an inorganic layer such as silicon oxide, silicon nitride, or metal oxide, and may include a single layer or a plurality of layers.
The gate electrode is located in a specific region on the gate insulating layer. The gate electrode may include a single layer or a plurality of layers of gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), aluminum (Al), molybdenum (Mo), or chromium (Cr), or an alloy such as aluminum (Al): neodymium (Nd) alloy, molybdenum (Mo): tungsten (W) alloy.
The interlayer insulating layer is on the gate electrode. The interlayer insulating layer may be formed of an insulating inorganic layer of silicon oxide, silicon nitride, or the like. Alternatively, the interlayer insulating layer may be formed of an insulating organic layer.
The source and drain electrodes are on the interlayer insulating layer. The source and drain electrodes are electrically connected (or coupled) to the source and drain regions, respectively, through contact holes formed by selectively removing the gate insulating layer and the interlayer insulating layer.
The passivation layer is located on the source electrode and the drain electrode. The passivation layer may be formed of an inorganic layer of silicon oxide, silicon nitride, or the like, or an organic layer.
The planarization layer is located on the passivation layer. The planarization layer includes an organic layer of acryl, Polyimide (PI), benzocyclobutene (BCB), or the like.
The anode layer, the cathode layer, the organic light emitting layer and the hole injection layer constitute a plurality of organic light emitting elements. Namely, the organic light-emitting element comprising the first organic light-emitting layer is a first light-emitting element and corresponds to the first sub-pixel; the organic light-emitting element comprising a second organic light-emitting layer is a second type of light-emitting element and corresponds to the second sub-pixel; the organic light-emitting element comprising a third organic light-emitting layer is a third light-emitting element and corresponds to a third sub-pixel; the display panel includes first, second, and third light emitting elements arranged in an array, thereby forming first, second, and third sub-pixels arranged in an array. The anode is electrically connected to the source electrode or the drain electrode, and the organic light-emitting element emits light in accordance with a current flowing through the source electrode or the drain electrode.
The anode may be formed of various conductive materials. For example, the anode may be formed as a transparent electrode or a reflective electrode according to its use. When the anode is formed as a transparent electrode, the anode may include Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), or the like, and when the anode is formed as a reflective electrode, the reflective layer may be formed of Ag, magnesium (Mg), Al, Pt, Pd, Au, Ni, Nd, iridium (Ir), Cr, or a mixture thereof, and ITO, IZO, ZnO, In2O3, or the like may be formed on the reflective layer.
A Pixel Defining Layer (PDL) covers the edge of the anode. The PDL around the edge of the anode defines the emission area of each sub-pixel. The PDL may be formed of an organic material such as Polyimide (PI), polyamide, benzocyclobutene (BCB), acryl resin, or phenol resin.
The organic light emitting layer 13 may be positioned on the anode, and the portion of the anode on which the organic light emitting layer is disposed is not covered with PDL and is exposed. The organic light emitting layer may be formed through a vapor deposition process, and the organic light emitting layer is patterned to correspond to each sub-pixel, i.e., to the patterned anode.
The organic light emitting layer 13 may be formed of a low molecular weight organic material or a high molecular weight organic material, the organic light emitting layer 13 serves as an emission layer, and may further include at least one of a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL). However, the organic light emitting layer may include other various functional layers in addition to the emission layer.
The cathode is located on the organic light emitting layer. Like the anode, the cathode may be formed as a transparent electrode or a reflective electrode.
The anode and the cathode are insulated from each other by the organic light emitting layer. If a voltage is applied between the anode and the cathode, the organic light emitting layer emits visible light, thereby realizing an image that can be recognized by a user. The cathode may be formed as a transparent electrode or a reflective electrode.
When the cathode is formed as a transparent electrode, a compound having a small work function such as lithium (Li), calcium (Ca), lithium fluoride/calcium (LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum (Al), magnesium (Mg), or a combination thereof may be initially deposited on the organic light emitting layer by evaporation, and a transparent electrode forming material such as ITO, IZO, ZnO, or In2O3 may be deposited on the compound.
When the cathode is formed as a reflective electrode, the second electrode may be formed by evaporating Li, Ca, LiF/Al, Mg, or a mixture thereof on the entire surface of the flexible substrate.
According to the technical scheme provided by the embodiment of the invention, as the film layer is doped with the voltage adjusting material, the voltage adjusting material can adjust the lighting voltage of the sub-pixels, and accordingly, the difference of the lighting voltage among the first sub-pixel, the second sub-pixel and the third sub-pixel is reduced, and when one type of sub-pixel is lighted, the influence on other types of sub-pixels can be reduced. Exemplarily, referring to fig. 2 and 3, fig. 2 and 3 are comparison graphs of the lighting voltage of the sub-pixel provided by the embodiment of the present invention. Wherein the abscissa represents the voltage between the anode and the cathode of the sub-pixel, and the ordinate represents the light emission luminance. The first sub-pixel, the second sub-pixel and the third sub-pixel are respectively a red sub-pixel, a green sub-pixel and a blue sub-pixel, and the lighting voltage of the blue sub-pixel is the highest and the lighting voltage of the red sub-pixel is the lowest. Referring to fig. 2, the on-voltage of the blue sub-pixel is reduced by adding a voltage adjusting material to the third organic light emitting layer, where a curve 101 is the on-voltage of the blue sub-pixel corresponding to the case where the voltage adjusting material is not added to the third organic light emitting layer, and a curve 102 is the on-voltage of the blue sub-pixel corresponding to the case where the voltage adjusting material is added to the third organic light emitting layer. The starting voltage of the blue sub-pixel is reduced, so that when the blue sub-pixel is lightened, the crosstalk current generated by lightening the blue sub-pixel can be reduced, the probability that the red sub-pixel and the green sub-pixel are lightened by the crosstalk current is reduced, and the display effect is improved. Referring to fig. 3, the voltage adjustment material is added to the first organic light emitting layer to increase the turn-on voltage of the red sub-pixel, where a curve 103 is the turn-on voltage of the red sub-pixel corresponding to the case where the voltage adjustment material is not added to the first organic light emitting layer, and a curve 104 is the turn-on voltage of the red sub-pixel corresponding to the case where the voltage adjustment material is added to the first organic light emitting layer. The turn-on voltage of the red sub-pixel is increased, and the threshold for the red sub-pixel to be turned on by crosstalk current and/or TFT (thin film transistor) leakage is increased. The probability that the red sub-pixel is lightened by crosstalk current is reduced, low gray scale color cast is improved, and the display effect is improved.
It should be noted that, in the specific operation process, the voltage doping material may be used to reduce the lighting voltage of the pixel with higher lighting voltage and/or increase the lighting voltage of the sub-pixel with lower lighting voltage. The lighting voltages of the sub-pixels of different colors are made to approach or be equal. When the sub-pixel of a certain color is lightened, the influence of crosstalk current on the sub-pixels of other colors is effectively reduced, and the display effect is improved. For example, a hole-type material is added to the hole injection layer to reduce the turn-on voltage; and an electron type material is added in the hole injection layer, so that the starting voltage is improved. Adding hole type materials in the organic light-emitting layer to increase holes, or doping electron type materials in the organic light-emitting layer to increase electrons. The cavity type material can be selected from: TCNQ, PPDN, CuPC, and the like. The electronic type material can be selected from: BCP, Bphen, TPBi, and the like.
Fig. 4 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Referring to fig. 4, on the basis of the above embodiment, the display panel further includes an electron transport layer 15, the electron transport layer 15 being disposed between the cathode layer 14 and the organic light emitting layer 13;
at least one of the first organic light emitting layer 131, the second organic light emitting layer 132, the third organic light emitting layer 133, the hole injection layer 12, and the electron transport layer 15 is doped with a voltage adjusting material.
Further, on the basis of the above embodiment, the display panel may further include an electron injection layer 16, the electron injection layer 16 being located between the cathode layer 14 and the electron transport layer 15;
at least one of the first organic light emitting layer 131, the second organic light emitting layer 132, the third organic light emitting layer 133, the hole injection layer 16, the electron injection layer 16, and the electron transport layer 15 is doped with a voltage adjusting material.
The material added to the electron transport layer 15 or the electron injection layer 16 may be a hole-type material, and the hole-type material is used to reduce the electron mobility. By adding a hole material to the electron transport layer 15 or the electron injection layer 16, the electron mobility can be reduced, and the turn-on voltage of the sub-pixel can be increased. Or, the material added in the electron transport layer 15 or the electron injection layer 16 is an electron type material, and the electron type material is used for improving the electron mobility and reducing the turn-on voltage of the sub-pixel.
The electron transport layer 15 may be disposed on the organic light emitting layer 13, and may have a continuous form between adjacent sub-pixels, or may be discontinuous and discrete between adjacent sub-pixels. The electron transport layer 15 transports electrons supplied from the cathode 14 through the electron injection layer 16 to the organic light emitting layer 13. The electron transport layer 15 may be formed of an organic compound such as 4, 7-diphenyl-1, 10-phenanthroline (Bphen), aluminum biphenol, aluminum tris (8-hydroxyquinoline) (Alq3), bis (10-hydroxybenzoquinoline) beryllium (Bebq2), TPBI, and/or the like. The electron transport layer 15 may be formed by, for example, a deposition method or any other suitable method.
The electron injection layer 16 may be disposed on the electron transport layer 15. The electron injection layer 16 is a buffer layer that lowers the energy barrier between the electron transport layer 15 and the cathode 14. The electron injection layer 16 facilitates the injection of electrons from the cathode 14 into the electron transport layer 15. The electron injection layer 16 may be formed of LiF, CsF, and/or the like. The electron injection layer 16 may be formed by, for example, a deposition method or any other suitable method.
Optionally, with continuing reference to fig. 4, on the basis of the foregoing embodiment, the display panel provided in the embodiment of the present invention may further include a hole transport layer 17; the hole transport layer 17 is provided between the hole injection layer 12 and the organic light emitting layer 13;
the hole injection layer 12 serves to lower an energy barrier between the anode of the anode layer 11 and the hole transport layer 17. The hole injection layer 12 facilitates injection of holes from the anode into the hole transport layer 17. The hole injection layer 12 is formed of an organic compound such as 4, 4', 4 ″ -tris (N-3-methylphenyl-phenylamino) triphenylamine (MTDATA), copper phthalocyanine (CuPc) or poly (3, 4-ethylenedioxythiophene), poly (styrenesulfonic acid) (PEDOT/PSS), and/or the like.
The hole transport layer 17 transports the holes supplied from the hole injection layer 12 to the organic light emitting layer 13. The hole transport layer 17 is formed of a hole transport material having a conductivity lower than that of the hole injection layer 12. The hole transport layer 17 may be formed of an organic compound such as N, N '-diphenyl-N, N' -bis (3-methylphenyl) -1,1 '-biphenyl-4, 4' -diamine (TPD) or N, N '-bis (naphthalen-1-yl) -N, N' -diphenyl-benzidine (NPB) and/or the like.
At least one of the first organic light emitting layer 131, the second organic light emitting layer 132, the third organic light emitting layer 133, the hole injection layer 12, and the hole transport layer 17 is doped with a voltage adjusting material.
The voltage adjusting material doped in the hole transport layer 17 or the hole injection layer 12 may be an electron-type material; the electronic material is used for reducing the hole mobility and improving the turn-on voltage of the sub-pixel. Or, the voltage adjusting material doped in the hole transport layer 17 or the hole injection layer 12 is a hole type material, and the hole type material is used for improving the hole mobility and reducing the turn-on voltage of the sub-pixel.
Fig. 5 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Referring to fig. 5, on the basis of the above embodiment, the display panel provided by the embodiment of the present invention further includes at least one of a first microcavity adjusting layer, a second microcavity adjusting layer 142, and a third microcavity adjusting layer 143; the first microcavity adjusting layer may be disposed between the first organic light emitting layer 131 and the hole injection layer 17, the second microcavity adjusting layer 142 may be disposed between the second organic light emitting layer 132 and the hole injection layer 17, and the third microcavity adjusting layer 143 may be disposed between the third organic light emitting layer 143 and the hole injection layer 17. The second microcavity adjusting layer 142 and the third microcavity adjusting layer 143 are exemplarily shown in fig. 5.
The first microcavity adjusting layer, the second microcavity adjusting layer and the third microcavity adjusting layer are used for adjusting the optical microcavity, and can effectively adjust the color coordinates of the first sub-pixel, the second sub-pixel and the third sub-pixel respectively. The display effect is improved. An electronic material can be added into the first microcavity adjusting layer, the second microcavity adjusting layer and the third microcavity adjusting layer, so that the hole mobility is reduced, and the starting voltage is improved.
In an embodiment of the present invention, the voltage regulating material includes a hole type material and an electron type material. The cavity material comprises TCNQ, PPDN and CuPC. The electron type material comprises BCP, Bphen and TPBi.
With continued reference to fig. 5, on the basis of the above embodiment, the display panel provided in the embodiment of the present invention may further include a light extraction layer 18, where the light extraction layer 18 is located on a side of the cathode layer 14 away from the organic light emitting layer 13. The light extraction layer 18 can increase the light extraction efficiency at the top of the display panel.
Fig. 6 is a schematic structural diagram of another display panel according to an embodiment of the present invention, and referring to fig. 6, unlike the above embodiment, the hole transport layer 17, the electron transport layer 15, and the electron injection layer 16 of different sub-pixels are all discontinuous, so as to cut off the path through which crosstalk current is transmitted between different sub-pixels, thereby further reducing the interference of the crosstalk current. Wherein, 10 bit substrate base plates.
An embodiment of the present invention further provides a display device, referring to fig. 7, fig. 7 is a schematic diagram of a display device provided in an embodiment of the present invention, and the display device 700 includes the display panel 100 provided in any embodiment of the present invention.
According to the technical scheme provided by the embodiment of the invention, voltage adjusting materials are doped in one or more film layers of the hole injection layer, the hole transport layer, the organic light emitting layer, the microcavity adjusting layer, the electron transport layer, the electron injection layer and the like, and after the voltage adjusting materials are doped, the starting voltages of the first sub-pixel, the second sub-pixel and the third sub-pixel are close to equal or equal to each other. The crosstalk current generated by the sub-pixel with higher starting voltage can be reduced, and the threshold of the sub-pixel lighted by the crosstalk current and/or TFT electric leakage can be improved. The probability that the sub-pixels are lightened by crosstalk current is reduced, low gray scale color cast is improved, and the display effect is improved.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (12)
1. A display panel is characterized by comprising an anode layer, a hole injection layer, an organic light emitting layer and a cathode layer which are sequentially arranged, wherein the organic light emitting layer comprises a first organic light emitting layer, a second organic light emitting layer and a third organic light emitting layer, and the first organic light emitting layer, the second organic light emitting layer and the third organic light emitting layer respectively correspond to a first sub-pixel, a second sub-pixel and a third sub-pixel;
at least one of the first, second and third organic light emitting layers is doped with a voltage adjusting material for changing conductivity of a film layer doped with the voltage adjusting material to reduce at least one of an absolute value of a difference between lighting voltages of the first and second sub-pixels, an absolute value of a difference between lighting voltages of the first and third sub-pixels, and an absolute value of a difference between lighting voltages of the second and third sub-pixels;
the voltage regulating material includes a hole type material and an electron type material.
2. The display panel according to claim 1, further comprising an electron transport layer disposed between the cathode layer and the organic light emitting layer;
at least one of the first organic light emitting layer, the second organic light emitting layer, the third organic light emitting layer, the hole injection layer, and the electron transport layer is doped with a voltage adjusting material.
3. The display panel according to claim 2, further comprising an electron injection layer between the cathode layer and the electron transport layer;
at least one of the first organic light emitting layer, the second organic light emitting layer, the third organic light emitting layer, the hole injection layer, the electron injection layer, and the electron transport layer is doped with a voltage adjusting material.
4. The display panel according to claim 3, wherein the material added in the electron transport layer or the electron injection layer is a hole type material for reducing electron mobility;
or the material added in the electron transport layer or the electron injection layer is an electron type material, and the electron type material is used for improving the electron mobility.
5. The display panel according to claim 1, further comprising a hole transport layer; the hole transport layer is arranged between the hole injection layer and the organic light-emitting layer;
at least one of the first organic light emitting layer, the second organic light emitting layer, the third organic light emitting layer, the hole injection layer, and the hole transport layer is doped with a voltage adjusting material.
6. The display panel according to claim 5, wherein the voltage adjusting material doped in the hole transport layer or the hole injection layer is an electron type material for reducing hole mobility;
or the voltage adjusting material doped in the hole transport layer or the hole injection layer is a hole type material, and the hole type material is used for improving hole mobility.
7. The display panel according to claim 1, further comprising at least one of a first microcavity adjusting layer, a second microcavity adjusting layer, and a third microcavity adjusting layer;
the first microcavity adjusting layer is arranged between the first organic light emitting layer and the hole injection layer, the second microcavity adjusting layer is arranged between the second organic light emitting layer and the hole injection layer, and the third microcavity adjusting layer is arranged between the third organic light emitting layer and the hole injection layer.
8. The display panel of claim 1, wherein the hole type material comprises TCNQ, PPDN, CuPC.
9. The display panel of claim 1, wherein the electronic type material comprises BCP, Bphen, TPBi.
10. The display panel according to claim 1, further comprising a light extraction layer on a side of the cathode layer away from the organic light emitting layer.
11. The display panel according to claim 1, wherein the first sub-pixel, the second sub-pixel, and the third sub-pixel are one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively.
12. A display device characterized by comprising the display panel according to any one of claims 1 to 11.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710917624.3A CN109599413B (en) | 2017-09-30 | 2017-09-30 | Display panel and display device |
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| CN201710917624.3A CN109599413B (en) | 2017-09-30 | 2017-09-30 | Display panel and display device |
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| CN109599413A CN109599413A (en) | 2019-04-09 |
| CN109599413B true CN109599413B (en) | 2021-04-27 |
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| CN110299103A (en) * | 2019-06-28 | 2019-10-01 | 上海天马有机发光显示技术有限公司 | A kind of display panel and display device |
| CN111613547B (en) * | 2020-05-29 | 2024-04-05 | 京东方科技集团股份有限公司 | Substrate and film material determining method, manufacturing method and testing system |
| CN111969116B (en) * | 2020-07-31 | 2022-09-06 | 合肥维信诺科技有限公司 | Display panel and manufacturing method thereof |
| CN111816690B (en) * | 2020-08-28 | 2022-11-15 | 云谷（固安）科技有限公司 | Display device and display apparatus |
| CN113178464B (en) * | 2021-04-08 | 2024-02-02 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting display panel and display device |
| CN113130805B (en) * | 2021-04-12 | 2023-06-02 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN113629202A (en) * | 2021-07-22 | 2021-11-09 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| CN116825910B (en) * | 2023-08-29 | 2023-11-10 | 季华实验室 | Array substrate preparation method, array substrate, display panel and display device |
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