CN109594969A - The analytic method of vapor chamber - Google Patents
The analytic method of vapor chamber Download PDFInfo
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- CN109594969A CN109594969A CN201710905996.4A CN201710905996A CN109594969A CN 109594969 A CN109594969 A CN 109594969A CN 201710905996 A CN201710905996 A CN 201710905996A CN 109594969 A CN109594969 A CN 109594969A
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- entry profile
- profile layer
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- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
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- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B43/00—Methods or apparatus for obtaining oil, gas, water, soluble or meltable materials or a slurry of minerals from wells
- E21B43/16—Enhanced recovery methods for obtaining hydrocarbons
- E21B43/24—Enhanced recovery methods for obtaining hydrocarbons using heat, e.g. steam injection
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- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B49/00—Testing the nature of borehole walls; Formation testing; Methods or apparatus for obtaining samples of soil or well fluids, specially adapted to earth drilling or wells
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/10—Geometric CAD
- G06F30/17—Mechanical parametric or variational design
Abstract
The present invention provides a kind of analytic method of vapor chamber, the analytic method is successively the following steps are included: step S10: establishing the mathematical model of the vapor chamber of steam-stimulated well；Step S20: along the extending direction of vapor chamber, vapor chamber is divided into multiple steam entry profile layers；Step S30: by the measurement parameter inputting mathematical model of steam entry profile layer, distance is developed to obtain the lateral of steam entry profile layer, wherein measurement parameter includes the observed temperature of steam entry profile layer.The technical solution provided through the invention is able to solve the parameter inconvenience for obtaining vapor chamber in the prior art and problem at high cost.
Description
Technical field
The present invention relates to technical field of petroleum extraction, in particular to a kind of analytic method of vapor chamber.
Background technique
Viscous crude (or be heavy crude) is a kind of high viscosity, highdensity crude oil.Viscous crude institute's accounting in petroleum resources
Example is larger, while the exploitation difficulty of viscous crude is larger.How heavy crude producing, make available reserves, be oil field personnel
The problem of probing into always.Since the 1960s, the production technique of viscous crude has the development advanced by leaps and bounds, to being at present
Only, the heavy crude heat extraction technology with steam soak, steam drive etc. for main mining method has been formd, and with alkali drive, polymer
Drive, mixed phase drive etc. are the heavy oil cold flow production technology of main mining method.
Currently, thickened oil recovery mainly based on thermal recovery, i.e., is exploited thick by way of injecting high temperature and high pressure steam to stratum
Oil.Wherein, steam soak is to improve one of the important means of thick oil recovery ratio.After water vapour injects in the viscous crude of stratum, entire mistake
The heat transfer of journey, the type of flow are sufficiently complex, and understanding changing rule of the water vapour in viscous crude has important meaning for heavy crude heat extraction
Justice.Wherein, the size variation that steam-stimulated well absorbs the vapor chamber that water vapour generates is the physical quantity being concerned about very much in engineering.But
It is that, due to being limited by underground environment, each position of vapor chamber can not be measured and measurement cost is high therefore existing
The parameter that the vapor chamber of steam-stimulated well is obtained in technology is inconvenient and at high cost.
Summary of the invention
The present invention provides a kind of analytic method of vapor chamber, inconvenient with the parameter for solving to obtain vapor chamber in the prior art
And problem at high cost.
To solve the above-mentioned problems, the present invention provides a kind of analytic method of vapor chamber, which successively includes
Following steps: step S10: the mathematical model of the vapor chamber of steam-stimulated well is established；Step S20: along the extending direction of vapor chamber,
Vapor chamber is divided into multiple steam entry profile layers；Step S30: by the measurement parameter inputting mathematical model of steam entry profile layer, with
Obtain the lateral development distance R of steam entry profile layerh, wherein measurement parameter includes the observed temperature T of steam entry profile layers。
Further, step S10 is the following steps are included: step S11: vapor chamber is reduced to down triangular prism structure；Step
S12: the boundary condition for being used for slab construction is used for down in triangular prism structure, to obtain mathematical model.
Further, mathematical model are as follows:
Wherein, T0For the initial temperature of steam in vapor chamber,To fall the x direction factor of triangular prism,To fall triangular prism
Y direction factor,To fall the z direction factor of triangular prism.
Further,Calculation formula be respectively as follows:
Wherein, y is the length of steam entry profile layer extending direction, and h is thickness of the steam entry profile layer along depth of stratum direction, ar
For stratum thermal diffusion coefficient.
Further, arIt is calculated by following formula:
Wherein, φ is porosity, SwFor the moisture content of steam entry profile layer, TkFor the temperature on the stratum outside steam entry profile layer, Mr
For the specific heat capacity of steam entry profile layer.
Further, MrIt is obtained by following formula:
Mr=φ Soρocp,o+φSwρwcp,w+(1-φ)ρrcp,r,
Wherein, SoFor the oil content of steam entry profile layer, ρo、ρw、ρrOil, water, formation rock matrix respectively under formation condition
Density, cp,o、cp,w、cp,rOil respectively under formation condition, water, formation rock matrix specific heat.
Further, ρo、cp,o、ρwIt is obtained respectively by following formula:
Further, MrIt is obtained by following formula:
Mr=20857 [32.5+ (4.6 φ0.32-2)(10Sw-1.5)]。
Further, after step S30, analytic method is further comprising the steps of: step S40: calculating vapor chamber edge and prolongs
Stretch the distribution parameter in direction.
Further, step S40 is the following steps are included: step S41: according to the R of steam entry profile layerhValue calculates steam entry profile
The heating surface (area) (HS of layer；Step S42: the steam absorbing amount of steam entry profile layer is calculated according to the heating surface (area) (HS of steam entry profile layer and inhales vapour and is cutd open
The steam absorbing amount of surface layer accounts for the percentage I of total steam absorbing amount of vapor chamberi, percentage is distribution parameter.
Further, in step S42, I is calculated using following formulai:
There are multiple steam injection points in vapor chamber, multiple steam injection points and multiple steam entry profile layers correspond, and N indicates steam injection point
Number, i indicate i-th of steam injection point.
Further, in step s 12, boundary condition are as follows:
Wherein, arFor stratum thermal diffusion coefficient, T0For surrounding formation temperature, z is the thickness of slab construction.
It applies the technical scheme of the present invention, establishes the mathematical model of the vapor chamber of steam-stimulated well, then draw vapor chamber
It is divided into multiple steam entry profile layers, it will be in the measurement parameter inputting mathematical model of steam entry profile layer, so that it may steam entry profile be calculated
The lateral development distance of layer.Compared with measurement method in the prior art, technical solution of the present invention passes through mathematical computations energy
The parameter of different location in vapor chamber is obtained, enough so as to improve the convenience of acquisition vapor chamber parameter and reduce acquisition steam
The cost of chamber parameter.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 shows the schematic diagram that vapor chamber is reduced to down to triangular prism structure in the present invention；
Fig. 2 shows Parameters variation figure of the FHW12230 well in 265m depth；
Fig. 3 shows Parameters variation figure of the FHW12230 well in 290m depth；
Fig. 4 shows Parameters variation figure of the FHW12236 well in 265m depth；
Fig. 5 shows Parameters variation figure of the FHW12236 well in 340m depth.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Below
Description only actually at least one exemplary embodiment be it is illustrative, never as to the present invention and its application or make
Any restrictions.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall within the protection scope of the present invention.
The embodiment provides a kind of analytic method of vapor chamber, the analytic method successively the following steps are included:
Step S10: the mathematical model of the vapor chamber of steam-stimulated well is established；Step S20: along the extending direction of vapor chamber, by vapor chamber
It is divided into multiple steam entry profile layers；Step S30: by the measurement parameter inputting mathematical model of steam entry profile layer, to obtain inhaling vapour
The lateral development distance R of section layerh, wherein measurement parameter includes the observed temperature T of steam entry profile layerS。
Using the technical solution of the present embodiment, the mathematical model of the vapor chamber of steam-stimulated well is established, then by vapor chamber
Multiple steam entry profile layers are divided into, it will be in the measurement parameter inputting mathematical model of steam entry profile layer, so that it may suction vapour be calculated and cut open
The lateral development distance R of surface layerh.Compared with measurement method in the prior art, the technical solution of the present embodiment passes through mathematics meter
The parameter that can obtain different location in vapor chamber is calculated, is obtained so as to improve convenience and the reduction of acquisition vapor chamber parameter
Take the cost of vapor chamber parameter.The lateral development distance R of steam entry profile layer is calculatedhIt afterwards, can be according to RhValue further count
Calculation obtains other desired parameter, is analyzed with the vapor chamber to steam-stimulated well.
In thermal process, after water vapour injects oil reservoir and vapor chamber forms certain volume, steam is not reinjected, this
This stage is known as the stewing well stage afterwards.By the knowledge of thermal conduction study it is recognised that originally injection is steamed since not new steam injects
The high-temperature steam chamber that vapour is formed will constantly scatter and disappear with its thermally conductive heat of oil reservoir, therefore the temperature of vapor chamber will be reduced constantly.
The physical parameter of the variation of vapor chamber temperature and the original size of vapor chamber, oil reservoir primary condition and oil reservoir etc. is closely related.
In the technical scheme of this embodiment, vapor chamber is divided into the calculating that multiple steam entry profile layers can be convenient for parameter.Actual measurement temperature
Spend TSRefer to the temperature value for changing over time real-time measurement.Use the actual measurement for being easier to acquisition and accurate steam entry profile layer
Temperature TSEtc. parameters calculate the lateral development distance R of steam entry profile layerh, it is not only able to improve the convenience for obtaining vapor chamber parameter,
The accuracy of calculated result can also be improved.
Specifically, step S10 is the following steps are included: step S11: vapor chamber is reduced to down triangular prism structure；Step
S12: the boundary condition for being used for slab construction is used for down in triangular prism structure, to obtain mathematical model.When steam injects oil reservoir
Afterwards, under gravity, vapor chamber will form the shape that a top is wide, lower part gradually tapers up.As shown in Figure 1, in order to just
It is analyzed in using heat transfer theory model, which is simplified, be the knot of falling triangular prism by the shape simplification of vapor chamber
Structure.Vapor chamber is reduced to the more similar triangular prism structure of structure, so that vapor chamber is become the structure of regular shape, can protect
Convenient for calculating while card calculated result is accurate, in order to founding mathematical models and technical difficulty and calculation amount are reduced.
Vapor chamber is reduced to down triangular prism structure and the boundary condition for being used for slab construction is used for down triangular prism structure
In after, obtained mathematical model are as follows:
Wherein, TavgIndicate changing rule of the mean temperature with the stewing well time in vapor chamber, T0For in vapor chamber steam just
Beginning temperature,To fall the x direction factor of triangular prism,To fall the y direction factor of triangular prism,For fall triangular prism the direction z because
Son. It can push over to obtain with averaging method by integrating.
In the present embodiment,Calculation formula be respectively as follows:
Wherein, y is the length of steam entry profile layer extending direction, and h is thickness of the steam entry profile layer along depth of stratum direction, ar
For stratum thermal diffusion coefficient, t refers to the parameter with time correlation.After above-mentioned formula simultaneous gets up, a certain steam entry profile layer is given
Length y, thickness h value and stratum thermal diffusion coefficient ar, steam initial temperature T in vapor chamber0, steam entry profile layer actual measurement
Temperature Ts, the lateral development distance R of the steam entry profile layer can be calculatedh。
As the variation of time can develop and change, steam entry profile layer also correspondingly develops and changes vapor chamber.Vapour is inhaled to cut open
The observed temperature T of surface layersIt is the temperature in the middle part of the steam entry profile layer of measurement.More accurate laterally development distance value in order to obtain,
The temperature of other positions after the development of steam entry profile layer need to be obtained.However some positions are difficult to protrude into sensor and measure.It is logical
Above-mentioned formula is crossed, the temperature in steam entry profile layer in different time different location can be calculated.It on the one hand can solve in this way
Certainly the temperature of some positions is difficult to the problem of measuring in vapor chamber, on the other hand can be obtained again according to obtained temperature computation compared with
Accurate laterally development distance value.
Further, arIt can be calculated by following formula:
Wherein, φ is porosity, SwFor the moisture content of steam entry profile layer, TkFor the temperature on the stratum outside steam entry profile layer, Mr
For the specific heat capacity of steam entry profile layer.Porosity refers to ratio of the sum of all interstitial space volumes with the rock sample volume in rock sample.
In the present embodiment, MrIt can be obtained by following formula:
Mr=φ Soρocp,o+φSwρwcp,w+(1-φ)ρrcp,r。
Wherein, SoFor the oil content of corresponding steam entry profile layer, ρo、ρw、ρrOil, water, formation rock respectively under formation condition
The density of ground mass matter, cp,o、cp,w、cp,rOil respectively under formation condition, water, formation rock matrix specific heat.
In this embodiment, ρo、cp,o、ρwIt can be obtained respectively by following formula:
Wherein, cp,w=4300, certain cp,wAlso it can according to need and be chosen for other numerical value.ρr、cp,rIt can be provided according to geology
Material tables look-up to obtain, such as can obtain from " viscous crude technical manual ".API table shows the density of viscous crude, the density of viscous crude in vapor chamber
It can measure or be calculated.After obtaining the value of above-mentioned parameter, can further calculate to obtain the lateral development of steam entry profile layer away from
From Rh。
In order to simplify calculating process, or when corresponding geologic information is inadequate, MrIt can be obtained by following formula:
Mr=20857 [32.5+ (4.6 φ0.32-2)(10Sw-1.5)]。
By the formula analytic method can be equally able to use under the conditions of data is inadequate or computing capability is restricted
Obtain vapor chamber parameter, so as to improve obtain vapor chamber parameter convenience and reduce obtain vapor chamber parameter at
This.
In the present embodiment, after step S30, the analytic method is further comprising the steps of: step S40: calculating steam
Distribution parameter of the chamber along extending direction.It, can be by calculating steam after the lateral development distance of steam entry profile layer is calculated
Chamber further appreciates that the developmental state of vapor chamber along the distribution parameter of extending direction, thus to improve the yield of viscous crude or production effect
Rate provides more detailed and accurate foundation.
Specifically, step S40 is the following steps are included: step S41: according to the R of steam entry profile layerhValue calculates steam entry profile layer
Heating surface (area) (HS；Step S42: calculating the steam absorbing amount of steam entry profile layer according to the heating surface (area) (HS of steam entry profile layer, and inhales vapour and cut open
The steam absorbing amount of surface layer accounts for the percentage I of total steam absorbing amount of vapor chamberi, percentage is above-mentioned distribution parameter.It can get and steam in this way
Vapour chamber different location or different time developmental state, so as to adjust production technology as needed, to improve viscous crude
Yield or production efficiency.
In the present embodiment, I is calculated using following formulai:
There are multiple steam injection points in vapor chamber, multiple steam injection points and multiple steam entry profile layers correspond, i.e. suction vapour cuts open
Surface layer is divided according to the number and position of steam injection point.Wherein, N indicates steam injection point number, and i indicates i-th of steam injection point.
When the transverse direction for calculating separately to obtain each steam entry profile layer develops distance RhAfterwards, it can calculate separately to obtain by the formula
The steam absorbing amount of each steam entry profile layer accounts for the percentage of total steam absorbing amount of vapor chamber, so as to know clearly that vapor chamber exists
The developmental state of different location.Calculated moreover, bringing the measurement parameter of different time into formula, available vapor chamber with
The situation of change of time.The convenience for obtaining vapor chamber parameter can be effectively improved using the technical solution of the present embodiment and reduction obtains
Take the cost of vapor chamber parameter.
In the present embodiment, the boundary condition in step S12 are as follows:
Wherein, arFor stratum thermal diffusion coefficient, T0For surrounding formation temperature, z is the thickness of slab construction.
By thermodynamic argument it is found that in the change procedure approximation unstable state heat dissipation problem for boiling in a covered pot over a slow fire well stage steam chamber mean temperature
Solution.When time t=0, surrounding formation temperature is equal to T0, the temperature in vapor chamber is Ts, at other moment, the ground of unlimited distance
Layer temperature remains T0, and the temperature in vapor chamber will successively decrease at any time.Therefore, for infinity and with certain thickness h
Level board Unsteady Heat Transfer Problems, the mean temperature of entire plate can be obtained by above-mentioned formula are as follows:
Wherein,
It is solved using vapor chamber of the above-mentioned formula to the triangular prism structure in the present embodiment, need to consider the direction x and y
The influence in direction derives the mathematical model being calculated in the present embodiment by a series of.
In order to understand the accuracy of the analytic method in the present embodiment, below by two steam-stimulated wells in practical oil field
Measurement data the mathematical model is verified.
Following table is the design parameter of FHW12230 well:
| Oil gas field or block name | Weigh 32 wellblocks | Pound sign | FHW12230 |
| The finishing drilling date | 2015.05.11 | The complete well date | 2015.5.12 |
| Artificial bottom of a well (m) | 374.77 | Finishing drilling well depth (m) | 377.0 |
| Bushing height (m) | 4.70 | Horizontal section length (m) | 271.36 |
| Maximum hole deviation (°) | 93.91 | Vertical depth (m) | |
| Kickoff point (KOP) (m) | 25 | Screen casing length (m) | 128.59 |
As shown in Figures 2 and 3, respectively Parameters variation figure of the FHW12230 well when 265m is deep and 290m depth, wherein
Abscissa indicates the time, and ordinate indicates the temperature of steam entry profile layer, and circle indicates actual measured value, and curve expression is implemented with this
The match value that the analytic method of example obtains.By such as Fig. 2 and Fig. 3 it is found that the temperature that fitting obtains is coincide compared with actual measured value,
Therefore it can show that technical solution of the present invention reliability and feasibility with higher.In this way, by measurement temperature and fitting temperature
Degree further calculates the percentage that can obtain lateral the development distance and steam absorbing amount of steam entry profile layer.
According to stewing well phase temperature situation of change, the lateral development of the steam entry profile layer of FHW12230 well can be calculated
The steam absorbing amount of distance and steam entry profile layer accounts for the percentage of total steam absorbing amount of vapor chamber.Calculated result is as shown in the table:
As can be seen from the above table: vapor chamber develops distance (i.e. in the lateral of 246.2-270.0m, 270.0-295.0m well section
Heating radius) it is larger, vapor absorption capacity is stronger, and the 63.9% of the percentage of steam absorbing amount steam absorbing amount more total than total Zhan；300.0-330.0m
The lateral development distance of well section is smaller, and vapor absorption capacity is general, and the 28.9% of the percentage of steam absorbing amount steam absorbing amount total ratio Zhan；335.0-
The vapor absorption capacity of 340.0m well section is minimum, inhales the 7.15% of the total steam absorbing amount of vapour percentage Zhan.Therefore, technical side through the invention
The case where case can obtain vapor chamber in quick and inexpensive mode, thus preferably Instructing manufacture.
Following table is the design parameter of FHW12236 well:
As shown in Figure 4 and Figure 5, respectively Parameters variation figure of the FHW12236 well when 265m is deep and 340m depth, wherein
Abscissa indicates the time, and ordinate indicates the temperature of steam entry profile layer, and circle indicates actual measured value, and curve expression is implemented with this
The match value that the analytic method of example obtains.By such as Fig. 4 and Fig. 5 it is found that the temperature that fitting obtains is coincide compared with actual measured value,
Therefore it can show that technical solution of the present invention reliability and feasibility with higher.In this way, by measurement temperature and fitting temperature
Degree further calculates the percentage that can obtain lateral the development distance and steam absorbing amount of steam entry profile layer.
According to stewing well phase temperature situation of change, the lateral development of the steam entry profile layer of FHW12236 well can be calculated
The steam absorbing amount of distance and steam entry profile layer accounts for the percentage of total steam absorbing amount of vapor chamber.Calculated result is as shown in the table:
As seen from the above table: vapor chamber 265.0-280.0m and 340.0-350.0m well section lateral development apart from larger,
In 10m or more, vapor absorption capacity is stronger, and the percentage of steam absorbing amount is 5% or more of total steam absorbing amount；285.0-335.0m well section
Lateral development distance it is smaller, vapor absorption capacity is general, and the percentage of steam absorbing amount is the 5% or less of total steam absorbing amount.Therefore, pass through
The case where technical solution of the present invention can obtain vapor chamber in quick and inexpensive mode, thus preferably Instructing manufacture.
It applies the technical scheme of the present invention, establishes the mathematical model of the vapor chamber of steam-stimulated well, then draw vapor chamber
It is divided into multiple steam entry profile layers, it will be in the measurement parameter inputting mathematical model of steam entry profile layer, so that it may steam entry profile be calculated
The lateral development distance of layer.Compared with measurement method in the prior art, technical solution of the present invention passes through mathematical computations energy
The parameter of different location in vapor chamber is obtained, enough so as to improve the convenience of acquisition vapor chamber parameter and reduce acquisition steam
The cost of chamber parameter.Moreover, the formula in through the invention can be calculated in steam entry profile layer in different time difference position
The temperature set.The temperature that on the one hand can solve some positions in vapor chamber in this way is difficult to the problem of measuring, another aspect and energy
It is enough that more accurate laterally development distance value is obtained according to obtained temperature computation.Obtain the lateral development distance of steam entry profile layer
Afterwards, total suction of vapor chamber can be accounted for along the distribution parameter of extending direction, such as the steam absorbing amount of steam entry profile layer by calculating vapor chamber
The percentage of vapour amount further appreciates that the developmental state of vapor chamber, to provide more to improve the yield of viscous crude or production efficiency
Detailed and accurate foundation.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
Unless specifically stated otherwise, positioned opposite, the digital table of the component and step that otherwise illustrate in these embodiments
It is not limited the scope of the invention up to formula and numerical value.Simultaneously, it should be appreciated that for ease of description, each portion shown in attached drawing
The size divided not is to draw according to actual proportionate relationship.For technology, side known to person of ordinary skill in the relevant
Method and equipment may be not discussed in detail, but in the appropriate case, and the technology, method and apparatus should be considered as authorizing explanation
A part of book.In shown here and discussion all examples, any occurrence should be construed as merely illustratively, and
Not by way of limitation.Therefore, the other examples of exemplary embodiment can have different values.It should also be noted that similar label
Similar terms are indicated in following attached drawing with letter, therefore, once it is defined in a certain Xiang Yi attached drawing, then subsequent attached
It does not need that it is further discussed in figure.
In the description of the present invention, it is to be understood that, the noun of locality such as " front, rear, top, and bottom, left and right ", " it is laterally, vertical,
Vertically, orientation or positional relationship indicated by level " and " top, bottom " etc. is normally based on orientation or position shown in the drawings and closes
System, is merely for convenience of description of the present invention and simplification of the description, in the absence of explanation to the contrary, these nouns of locality do not indicate that
It must have a particular orientation or be constructed and operated in a specific orientation with the device or element for implying signified, therefore cannot manage
Solution is limiting the scope of the invention；The noun of locality " inside and outside " refers to inside and outside the profile relative to each component itself.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, being described as if the device in attached drawing is squeezed " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also be positioned with other different modes and (is rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
In addition, it should be noted that, limiting components using the words such as " first ", " second ", it is only for be convenient for
Corresponding components are distinguished, do not have Stated otherwise such as, there is no particular meanings for above-mentioned word, therefore should not be understood as to this
The limitation of invention protection scope.
Claims (12)
1. a kind of analytic method of vapor chamber, which is characterized in that successively the following steps are included:
Step S10: the mathematical model of the vapor chamber of steam-stimulated well is established；
Step S20: along the extending direction of the vapor chamber, the vapor chamber is divided into multiple steam entry profile layers；
Step S30: the measurement parameter of the steam entry profile layer is inputted in the mathematical model, to obtain the steam entry profile layer
Lateral development distance Rh, wherein the measurement parameter includes the observed temperature T of the steam entry profile layers。
2. analytic method according to claim 1, which is characterized in that the step S10 the following steps are included:
Step S11: the vapor chamber is reduced to down triangular prism structure；
Step S12: the boundary condition for being used for slab construction is used in the triangular prism structure, to obtain the mathematical modulo
Type.
3. analytic method according to claim 2, which is characterized in that the mathematical model are as follows:
Wherein, T0For the initial temperature of steam in the vapor chamber,For it is described fall triangular prism x direction factor,For it is described fall
The y direction factor of triangular prism,For the z direction factor of the triangular prism.
4. analytic method according to claim 3, which is characterized in thatCalculation formula be respectively as follows:
Wherein, y is the length of the steam entry profile layer extending direction, and h is thickness of the steam entry profile layer along depth of stratum direction
Degree, arFor stratum thermal diffusion coefficient.
5. analytic method according to claim 4, which is characterized in that arIt is calculated by following formula:
Wherein, φ is porosity, SwFor the moisture content of the steam entry profile layer, TkFor the temperature on the stratum outside the steam entry profile layer
Degree, MrFor the specific heat capacity of the steam entry profile layer.
6. analytic method according to claim 5, which is characterized in that MrIt is obtained by following formula:
Mr=φ Soρocp,o+φSwρwcp,w+(1-φ)ρrcp,r,
Wherein, SoFor the oil content of the steam entry profile layer, ρo、ρw、ρrOil, water, formation rock matrix respectively under formation condition
Density, cp,o、cp,w、cp,rOil respectively under formation condition, water, formation rock matrix specific heat.
7. analytic method according to claim 6, which is characterized in that ρo、cp,o、ρwIt is obtained respectively by following formula:
8. analytic method according to claim 5, which is characterized in that MrIt is obtained by following formula:
Mr=20857 [32.5+ (4.6 φ0.32-2)(10Sw-1.5)]。
9. analytic method according to any one of claim 1 to 8, which is characterized in that after the step S30, institute
It is further comprising the steps of to state analytic method:
Step S40: the vapor chamber is calculated along the distribution parameter of extending direction.
10. analytic method according to claim 9, which is characterized in that the step S40 the following steps are included:
Step S41: according to the R of the steam entry profile layerhValue calculates the heating surface (area) (HS of the steam entry profile layer；
Step S42: according to the heating surface (area) (HS of the steam entry profile layer calculate the steam entry profile layer steam absorbing amount and the suction
The steam absorbing amount of vapour section layer accounts for the percentage I of total steam absorbing amount of the vapor chamberi, the percentage is the distribution parameter.
11. analytic method according to claim 10, which is characterized in that in the step S42, using following formula meter
Calculate Ii:
There are multiple steam injection points in the vapor chamber, multiple steam injection points and multiple steam entry profile layers correspond, N table
Show the number of the steam injection point, i indicates i-th of steam injection point.
12. analytic method according to claim 2, which is characterized in that in step s 12, the boundary condition are as follows:
Wherein, arFor stratum thermal diffusion coefficient, T0For surrounding formation temperature, z is the thickness of the slab construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710905996.4A CN109594969A (en) | 2017-09-28 | 2017-09-28 | The analytic method of vapor chamber |
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