CN109590898A - Workpiece grinding pad, wafer double-side grinding method and its grinding device - Google Patents
Workpiece grinding pad, wafer double-side grinding method and its grinding device Download PDFInfo
- Publication number
- CN109590898A CN109590898A CN201910072108.4A CN201910072108A CN109590898A CN 109590898 A CN109590898 A CN 109590898A CN 201910072108 A CN201910072108 A CN 201910072108A CN 109590898 A CN109590898 A CN 109590898A
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- Prior art keywords
- grinding
- grinding pad
- wafer
- abrasive areas
- workpiece
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- Pending
Links
- 238000000227 grinding Methods 0.000 title claims abstract description 179
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000005498 polishing Methods 0.000 claims abstract description 15
- 239000002002 slurry Substances 0.000 claims description 6
- 238000003801 milling Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 30
- 235000012431 wafers Nutrition 0.000 description 96
- 230000000694 effects Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a kind of workpiece grinding pad, wafer double-side grinding method and its grinding device, the grinding pad is applied to workpiece double-side polishing apparatus, it is opened up on the grinding pad fluted, on from the center of the grinding pad to the direction at edge, the grinding pad is divided at least two abrasive areas, the groove width of groove at least two abrasive areas is different, and/or, the boss between groove at least two abrasive areas it is of different size.Workpiece grinding pad of the invention, can adjust the distance proportion of sliding friction between grinding pad and wafer, prevent crystal round fringes turned-down edge, improve the flatness of wafer twin grinding.
Description
Technical field
The present invention relates to wafers to manufacture processing technique field, double more particularly, to a kind of workpiece grinding pad, a kind of wafer
Face grinding method and a kind of wafer double-side polishing apparatus.
Background technique
In wafer twin grinding engineering, wafer be pasted on grinding for up/down price fixing that the carrier comprising wafer is rotated
The surface contact of mill pad carries out cycloid motion by the rotation of internal gear (sun gear) and external gear (ring gear).Then, lead to
It crosses in the chemical reaction of the edge coating glue slurry of wafer and crystalline substance is ground by the influence for the physical reactions for rotating and pressurizeing
Circular surfaces.
During wafer twin grinding, the position at any point corresponding to the wafer in grinding pad surface can pass through
It is calculated.Near grinding pad both ends, the accumulative grinding on crystal round fringes is higher than wafer center.In other words, grinding wafer
When, physically, grinding distance near crystal round fringes grinding pad two sides periphery grinding distance relative in wafer
The grinding distance of centre will be grown.To cause the amount of grinding near grinding pad center to be less than the amount of grinding of grinding pad periphery, make
It is ground at crystal round fringes region transitions, forms wafer turned-down edge, reduce the flatness of grinding wafer.
Summary of the invention
In view of this, the present invention provides a kind of workpiece grinding pad, sliding friction between grinding pad and wafer can be adjusted
Distance proportion prevents crystal round fringes turned-down edge, improves the flatness of wafer twin grinding.
The present invention also provides a kind of wafer double-side grinding method and wafer double-side polishing apparatus.
In order to solve the above technical problems, the invention adopts the following technical scheme:
The workpiece grinding pad of embodiment according to a first aspect of the present invention, the grinding pad are filled applied to workpiece twin grinding
Set, opened up on the grinding pad it is fluted, on from the center of the grinding pad to the direction at edge, the grinding pad be divided into
Lack two abrasive areas, the groove width of the groove at least two abrasive areas is different, and/or, at least two grinding
The boss between groove in region it is of different size.
Further, the abrasive areas is annular shape, and at least two abrasive areas is arranged concentrically.
Further, at least two abrasive areas include: on from the center of the grinding pad to the direction at edge according to
The first abrasive areas, the second abrasive areas and the third abrasive areas of secondary setting.
Further, the contact area of first abrasive areas and the workpiece than second abrasive areas with it is described
The contact area of the small 10%-20% of the contact area of workpiece, the third abrasive areas and the workpiece is than second grinding
The small 25%-35% of contact area in region and the workpiece.
Further, the groove is the rectangular channel intersected in length and breadth；Or the groove is around the center of the grinding pad
The helical groove of rotation.
Further, the groove is the radioactivity groove of the extension of the radius along the grinding pad；Or the groove
Along the circumferentially extending groove of the grinding pad.
Further, the workpiece grinding pad is wafer grinding.
The wafer double-side grinding method of embodiment according to a second aspect of the present invention, comprising: wafer is placed in stickup and is covered with
Between the upper fixed disk and lower fixed disk of grinding pad described in above-described embodiment, and make the wafer it is two-sided respectively with the grinding
Sliding contact is padded to grind the two-sided of the wafer.
Further, the wafer double-side grinding method further include: coat grinding slurry on the edge of wafer.
The wafer double-side polishing apparatus of embodiment according to a third aspect of the present invention, including according to above-described embodiment
Grinding pad.
The advantageous effects of the above technical solutions of the present invention are as follows:
Workpiece grinding pad according to an embodiment of the present invention can adjust grinding pad ratio at a distance from sliding friction between wafer
Example prevents crystal round fringes turned-down edge, improves the flatness of wafer twin grinding.The wafer double-side grinding method of the embodiment of the present invention,
It can effectively solve the problem that edge turned-down edge problem when wafer twin grinding, improve the flatness of wafer twin grinding.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the grinding pad of the prior art；
Fig. 2 is the sectional view of the grinding pad of the prior art；
Fig. 3 is the structural schematic diagram of the grinding pad of the embodiment of the present invention；
Fig. 4 is a sectional view of the grinding pad of the embodiment of the present invention；
Fig. 5 is another sectional view of the grinding pad of the embodiment of the present invention.
Appended drawing reference:
Grinding pad 100；
Groove 10；Boss 11；
First abrasive areas 20；
Second abrasive areas 30；
Third abrasive areas 40.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair
Bright a part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skill
Personnel's every other embodiment obtained, shall fall within the protection scope of the present invention.
Unless otherwise defined, technical term or scientific term used in the present invention are should be in fields of the present invention
The ordinary meaning that personage with general technical ability is understood." first ", " second " used in the present invention and similar word
It is not offered as any sequence, quantity or importance, and is used only to distinguish different component parts." connection " or " connected "
It is not limited to physics or mechanical connection etc. similar word, but may include electrical connection, either directly
Or it is indirect."upper", "lower", "left", "right" etc. are only used for indicating relative positional relationship, when the absolute position for being described object
After setting change, then the relative positional relationship also correspondingly changes.
Workpiece grinding pad 100 according to an embodiment of the present invention is specifically described in conjunction with attached drawing first below.
Workpiece grinding pad 100 according to an embodiment of the present invention, grinding pad 100 are applied to workpiece double-side polishing apparatus, grinding
Fluted 10 are opened up on pad 100, on from the center of grinding pad 100 to the direction at edge, grinding pad 100 is divided at least two and grinds
Region is ground, the groove width of the groove 10 at least two abrasive areas is different, and/or, the groove 10 at least two abrasive areas
Between boss 11 it is of different size.
In other words, workpiece grinding pad 100 according to an embodiment of the present invention can be applied to workpiece double-side polishing apparatus,
In, workpiece double-side polishing apparatus can be wafer double-side polishing apparatus, and the embodiment of the present invention is all had by workpiece of wafer
Body explanation.Grinding pad 100 can be pasted respectively to be covered in the upper fixed disk and lower fixed disk of wafer double-side polishing apparatus, and wafer can be with
It is placed between upper fixed disk and lower fixed disk, makes the two-sided respectively with 100 sliding contact of grinding pad with the two-sided of grinding crystal wafer of wafer.It grinds
Fluted 10 can be processed on mill pad 100, on from the center of grinding pad 100 to the direction at edge, grinding pad 100 can be divided into
The groove width of at least two abrasive areas, the groove 10 at least two abrasive areas can be different, and/or, at least two grindings
The width of the boss 11 between groove 10 in region can be different, and Fig. 4 is the slot for changing the groove 10 in different abrasive areas
Wide grinding pad, Fig. 3 and Fig. 5 are the grinding pad of the width of the boss 11 between the groove 10 changed in different abrasive areas.It is logical
The width of the boss 11 between the width and/or groove 10 of the groove 10 at least two abrasive areas is overregulated, it is adjustable
The contact area of wafer and grinding pad 100 in different abrasive areas solves the problems, such as that crystal round fringes are easy turned-down edge when grinding wafer.
It should be noted that during wafer twin grinding, corresponding to any one of the wafer in 100 surface of grinding pad
The position of point can be by being calculated.Near 100 both ends of grinding pad, the accumulative grinding on crystal round fringes is higher than in wafer
Centre.In other words, when grinding wafer, physically, the grinding distance near crystal round fringes is (attached in 100 two sides periphery of grinding pad
Close grinding distance) than wafer center grinding apart from long.To cause the amount of grinding near 100 center of grinding pad to be less than
The amount of grinding of 100 periphery of grinding pad causes crystal round fringes region transitions to grind, and forms wafer turned-down edge, reduces grinding wafer
Flatness.As depicted in figs. 1 and 2, boss 3 between the width and groove 2 of the groove 2 in the grinding pad 1 of the prior art
Width is equally distributed, the accumulative grinding distance of calculating on the basis of crystal column surface, relative to wafer center region, crystal round fringes
Nearby the grinding distance compared to wafer center region will grow 5% or so, that is to say, that the grinding rate near crystal round fringes compares wafer
The grinding rate of center portion is high, and therefore, the transition in crystal round fringes region is ground, and more influence will be caused on the wafer thickness face of breaking,
The flatness for reducing grinding wafer, leads to wafer edge turned-down edge.
Boss 11 between width and/or groove 10 of the present invention by adjusting the groove 10 at least two abrasive areas
Width, it is adjustable difference abrasive areas in wafer and grinding pad 100 contact area, solution grinding wafer when crystal round fringes
The problem of being easy turned-down edge.
Workpiece grinding pad 100 according to an embodiment of the present invention as a result, can adjust and slide between grinding pad 100 and wafer
The distance proportion of friction prevents crystal round fringes turned-down edge, improves the flatness of wafer twin grinding.
According to one embodiment of present invention, abrasive areas is annular shape, and at least two abrasive areas are arranged concentrically.At least
Two abrasive areas include: the first abrasive areas 20, second set gradually on from the center of grinding pad 100 to the direction at edge
Abrasive areas 30 and third abrasive areas 40.
That is, at least two abrasive areas can be same as shown in figure 3, abrasive areas can be processed into annular shape
Heart setting.At least two abrasive areas may include first set gradually on from the center of grinding pad 100 to the direction at edge
Abrasive areas 20, the second abrasive areas 30 and third abrasive areas 40.As shown in figure 4, being ground positioned at the first abrasive areas 20, second
Grind the of different size of region 30 and the groove 10 in third abrasive areas 40.As shown in figure 5, being located at the first abrasive areas 20, the
The width of the boss 11 between groove 10 in two abrasive areas 30 and third abrasive areas 40 can be different, and are adjusted and ground with this
The frictional distance in the crystal round fringes region between pad 100 and wafer is ground, the first abrasive areas of wafer and grinding pad 100 is adjusted
20, the contact area of the second abrasive areas 30 and third abrasive areas 40, so that crystal round fringes when solving grinding wafer collapse
Side problem improves the flatness of grinding wafer.
According to one embodiment of present invention, the first abrasive areas 20 is with the contact area of workpiece than the second abrasive areas 30
With the small 10%-20% of contact area of workpiece, the contact area of third abrasive areas 40 and workpiece than the second abrasive areas 30 and
The small 25%-35% of the contact area of workpiece.
In other words, as shown in figure 3, the first abrasive areas 20 of grinding pad 100, the second abrasive areas 30 and third grinding
The area in region 40 can be respectively to account for 10%, 70% and the 20% of 100 gross area of grinding pad.Wherein, the first abrasive areas 20
It is 10%-20% smaller than the second abrasive areas 30 and the contact area of wafer with the contact area of wafer, it is preferable that the first milling zone
The contact area of domain 20 and wafer is smaller by 15% than the second abrasive areas 30 and the contact area of wafer.Third abrasive areas 40 and crystalline substance
Round contact area is 25%-35% smaller than the second abrasive areas 30 and the contact area of wafer, it is preferable that third abrasive areas 40
It is smaller by 30% than the second abrasive areas 30 and the contact area of wafer with the contact area of wafer.As shown in Figure 4 and Figure 5, it first grinds
It grinds region 20 and third abrasive areas 40 can be by increasing the groove 10 in the first abrasive areas 20 and third abrasive areas 40
Width, or reduce the width of boss 11 between the first abrasive areas 20 and 40 inner groovy 10 of third abrasive areas to distinguish
Reduce the contact area of grinding pad 100 and wafer in the first abrasive areas 20 and third abrasive areas 40.Certainly, the first milling zone
Domain 20 and third abrasive areas 40 can also reduce the boss 11 between adjacent grooves 10 while increasing by 10 width of groove
Width belongs to the present invention as long as the contact area of the first abrasive areas 20 and third abrasive areas 40 and wafer can be reduced
Protection scope.By reducing the contact area of the first abrasive areas 20 and third abrasive areas 40 and wafer, grinding pad is adjusted
In 100 between different abrasive areas and wafer sliding friction distance proportion, prevent crystal round fringes turned-down edge, improve that wafer is two-sided to be ground
The flatness of mill.
According to one embodiment of present invention, groove 10 can be processed into the rectangular channel intersected in length and breadth (such as Fig. 4 and Fig. 5 institute
Show), groove 10 can also be processed into the helical groove 10 around the rotation of the center of grinding pad 100, and groove 10 can also be processed into
Along the radioactivity groove 10 of the extension of the radius of grinding pad 100, groove 10 can also be processed into the circumferentially extending along grinding pad 100
Groove 10.As long as the concrete shape of groove 10 can adjust the first abrasive areas 20, the second abrasive areas 30 and third milling zone
The contact area of grinding pad 100 and wafer in domain 40 solves the problems, such as that crystal round fringes are easy turned-down edge when grinding wafer, belong to this
Invention scope of the claimed.
Preferably, the workpiece grinding pad 100 of the embodiment of the present invention can be wafer grinding, fill for wafer twin grinding
Set middle grinding crystal wafer.
To sum up, workpiece grinding pad 100 according to an embodiment of the present invention, can adjust between grinding pad 100 and wafer
The distance proportion of sliding friction prevents crystal round fringes turned-down edge, improves the flatness of wafer twin grinding.
The wafer double-side grinding method of embodiment according to a second aspect of the present invention, comprising: wafer is placed in stickup and is covered with
Between the upper fixed disk and lower fixed disk of grinding pad 100 in above-described embodiment, and slide the two-sided of wafer with grinding pad 100 respectively
Contact is with the two-sided of grinding crystal wafer.
In other words, the grinding pad 100 (as shown in Figures 3 to 5) in the embodiment of the present invention can be pasted respectively is covered in
In the upper fixed disk and lower fixed disk of wafer double-side polishing apparatus, wafer can be placed between upper fixed disk and lower fixed disk, make the double of wafer
Face is respectively with 100 sliding contact of grinding pad with the two-sided of grinding crystal wafer.The grinding pad 100 of the embodiment of the present invention is by adjusting first
It is convex between abrasive areas 20, the second abrasive areas 30 and the width and/or groove 10 of the groove 10 in third abrasive areas 40
The width of platform 11 come adjust separately the first abrasive areas 20, grinding pad 100 in the second abrasive areas 30 and third abrasive areas 40
With the contact area of wafer, solve the problems, such as that crystal round fringes are easy turned-down edge when grinding wafer.
According to one embodiment of present invention, wafer double-side grinding method can also include: to coat on the edge of wafer
Grinding slurry, grinding slurry can be polymer.Crystal round fringes can be inhibited to grind by coating grinding slurry in crystal round fringes,
To further prevent crystal round fringes turned-down edge, the flatness of wafer twin grinding is improved.
Wafer double-side grinding method according to an embodiment of the present invention as a result, when can effectively solve the problem that wafer twin grinding
Edge turned-down edge problem improves the flatness of wafer twin grinding.
The wafer double-side polishing apparatus of embodiment includes according to the grinding in above-described embodiment according to a third aspect of the present invention
Pad 100.Since grinding pad 100 according to an embodiment of the present invention has above-mentioned technique effect, it is according to an embodiment of the present invention
Wafer double-side polishing apparatus also has corresponding technical effect, can adjust sliding friction between grinding pad 100 and wafer
Distance proportion prevents crystal round fringes turned-down edge, improves the flatness of wafer twin grinding.
The other structures of double-side polishing apparatus according to an embodiment of the present invention and operation are to those skilled in the art
All it is to be understood that and easy to accomplish, therefore is not described in detail.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " preferred embodiment ", " specific embodiment " or " preferred embodiment " etc. means that the embodiment or example is combined to retouch
The particular features, structures, materials, or characteristics stated are included at least one embodiment or example of the invention.In this specification
In, schematic expression of the above terms may not refer to the same embodiment or example.Moreover, the specific features of description,
Structure, material or feature can be combined in any suitable manner in any one or more of the embodiments or examples.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (9)
1. a kind of workpiece grinding pad, which is characterized in that the grinding pad is applied to workpiece double-side polishing apparatus, on the grinding pad
Open up fluted, on from the center of the grinding pad to the direction at edge, the grinding pad is divided at least two abrasive areas,
The groove width of groove at least two abrasive areas is different, and/or, between the groove at least two abrasive areas
Boss it is of different size.
2. workpiece grinding pad according to claim 1, which is characterized in that the abrasive areas be annular shape, it is described at least
Two abrasive areas are arranged concentrically.
3. workpiece grinding pad according to claim 2, which is characterized in that at least two abrasive areas includes: from institute
State the first abrasive areas, the second abrasive areas and third milling zone set gradually on the center to the direction at edge of grinding pad
Domain.
4. workpiece grinding pad according to claim 3, which is characterized in that first abrasive areas connects with the workpiece
Touch the small 10%-20% of contact area of the second abrasive areas and the workpiece described in area ratio, the third abrasive areas and institute
The contact area for stating workpiece is 25%-35% smaller than the contact area of second abrasive areas and the workpiece.
5. workpiece grinding pad according to claim 1, which is characterized in that
The groove is the rectangular channel intersected in length and breadth；Or
The groove is the helical groove rotated around the center of the grinding pad；Or
The groove is the radioactivity groove of the extension of the radius along the grinding pad；Or
Circumferentially extending groove of the groove along the grinding pad.
6. workpiece grinding pad according to claim 1, which is characterized in that the workpiece grinding pad is wafer grinding.
7. a kind of wafer double-side grinding method characterized by comprising wafer is placed in stickup and is pasted just like claim 1-6
Any one of described in grinding pad upper fixed disk and lower fixed disk between, and make the two-sided sliding with the grinding pad respectively of the wafer
Dynamic contact is to grind the two-sided of the wafer.
8. wafer double-side grinding method according to claim 7, which is characterized in that the wafer double-side grinding method also wraps
It includes: coating grinding slurry on the edge of wafer.
9. a kind of wafer double-side polishing apparatus, which is characterized in that including grinding pad of any of claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910072108.4A CN109590898A (en) | 2019-01-25 | 2019-01-25 | Workpiece grinding pad, wafer double-side grinding method and its grinding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910072108.4A CN109590898A (en) | 2019-01-25 | 2019-01-25 | Workpiece grinding pad, wafer double-side grinding method and its grinding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109590898A true CN109590898A (en) | 2019-04-09 |
Family
ID=65966632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910072108.4A Pending CN109590898A (en) | 2019-01-25 | 2019-01-25 | Workpiece grinding pad, wafer double-side grinding method and its grinding device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109590898A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109623628A (en) * | 2018-12-12 | 2019-04-16 | 大连理工大学 | Inhibit the method for edge effect in a kind of mechanical lapping or polishing process |
| CN114310627A (en) * | 2021-12-30 | 2022-04-12 | 西安奕斯伟材料科技有限公司 | Polishing pad and polishing equipment for polishing silicon wafer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0439124A3 (en) * | 1990-01-22 | 1992-02-26 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
| US6273806B1 (en) * | 1997-05-15 | 2001-08-14 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
| US6648743B1 (en) * | 2001-09-05 | 2003-11-18 | Lsi Logic Corporation | Chemical mechanical polishing pad |
| CN203611120U (en) * | 2013-12-12 | 2014-05-28 | 中芯国际集成电路制造(北京)有限公司 | Chemical-mechanical grinding pad |
| CN108369908A (en) * | 2016-02-16 | 2018-08-03 | 信越半导体株式会社 | Double-side grinding method and double-side polishing apparatus |
-
2019
- 2019-01-25 CN CN201910072108.4A patent/CN109590898A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0439124A3 (en) * | 1990-01-22 | 1992-02-26 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
| US6273806B1 (en) * | 1997-05-15 | 2001-08-14 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
| US6648743B1 (en) * | 2001-09-05 | 2003-11-18 | Lsi Logic Corporation | Chemical mechanical polishing pad |
| CN203611120U (en) * | 2013-12-12 | 2014-05-28 | 中芯国际集成电路制造(北京)有限公司 | Chemical-mechanical grinding pad |
| CN108369908A (en) * | 2016-02-16 | 2018-08-03 | 信越半导体株式会社 | Double-side grinding method and double-side polishing apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109623628A (en) * | 2018-12-12 | 2019-04-16 | 大连理工大学 | Inhibit the method for edge effect in a kind of mechanical lapping or polishing process |
| CN114310627A (en) * | 2021-12-30 | 2022-04-12 | 西安奕斯伟材料科技有限公司 | Polishing pad and polishing equipment for polishing silicon wafer |
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Application publication date: 20190409 |
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