CN109585412A - Film resistance structure - Google Patents
Film resistance structure Download PDFInfo
- Publication number
- CN109585412A CN109585412A CN201710906615.4A CN201710906615A CN109585412A CN 109585412 A CN109585412 A CN 109585412A CN 201710906615 A CN201710906615 A CN 201710906615A CN 109585412 A CN109585412 A CN 109585412A
- Authority
- CN
- China
- Prior art keywords
- indium tin
- tin oxide
- oxide layer
- conductive layer
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 40
- 238000000151 deposition Methods 0.000 claims abstract description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 238000005660 chlorination reaction Methods 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000033228 biological regulation Effects 0.000 abstract description 3
- 238000002425 crystallisation Methods 0.000 abstract description 3
- 230000008025 crystallization Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical group [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
A kind of film resistance structure, comprising a conductive layer and in depositing an indium tin oxide layer on a surface of the conductive layer, exposed first to the indium tin oxide layer of conductive layer surface etching at least one etches spacing, it is 90 °~120 ° that the first etching spacing and the indium tin oxide layer, which are formed by angle, and the regulatable resistance value of the film resistor is between 5 Ω/~375 Ω/；By above structure, surface uniformity height, stability height, compact crystallization degree and the resistance regulation degree that can reach film resistance structure have more excellent control, facilitate the promotion of low end and the application of high-order product.
Description
Technical field
The present invention relates to a kind of film resistance structure, espespecially a kind of non-etched layer of etching solution influence that can reduce causes angle
The situation to become larger, and promote the film resistance structure of uniformity and high frequency.
Background technique
As can be seen from Figure 5, usual 30 system of film resistor is set on a copper foil layer 34 using a ni-p alloy coating 32 forms,
It reuses the etching copper foil layer 34 and reaches resistance function across the ni-p alloy coating 32 through electronics.However, since this is usual thin
30 surface particles of film resistance are not of uniform size and framework is at random stacks, and cause surface uniformity poor, make electron transfer path length and lead
Cause resistance difference.Further, since the film forming crystallite size on usual 30 surface of film resistor is different and loosely organized, therefore the control on processing procedure
System is more unstable, and product quality can not be promoted, and limit use scope.
Furthermore the etching for commonly using film resistor is to be carried out using same liquid medicine, and in other words, above-mentioned liquid medicine is wanted can be same
When etch each layer structure, however understructure can may be accidentally etched into when liquid medicine is etched superstructure, in turn
Lead to the change for etching pore size.
Therefore how to develop a kind of innovation structure of more ideal practicability, actually for the problems of above-mentioned point
Consumer eagerly looks forward to, and is also target and direction that related dealer must make great efforts that research and development are broken through.
Summary of the invention
The purpose of the present invention is to provide a kind of film resistance structure, tying up to deposition on conductive layer surface has homogenieity
The indium tin oxide layer of the good characteristic of good, compact structure, environmental resistance ability, and the etching angle of control conductive layer and indium tin oxide layer
Degree, has more excellent control to improve film resistor surface uniformity, stability, compact crystallization degree and resistance regulation degree.
To achieve the above object, the invention discloses a kind of film resistance structures, characterized by comprising:
One film resistor should comprising a conductive layer and in depositing an indium tin oxide layer on a wherein surface for the conductive layer
Exposed first to the indium tin oxide layer of conductive layer surface etching at least one etches spacing, the first etching spacing and the indium oxide
Tin layers be formed by angle be 90 °~120 °, the regulatable resistance value system of the film resistor between 5 Ω/~375 Ω/ it
Between.
Among the above, the of Ω/ refers to the identical square of length and width, is also denoted as Ω/sq or Ω/unit plane
Product.
Wherein, etching solution used in the conductive layer is iron chloride, copper chloride, ammonium hydroxide or above-mentioned any combination；It should
Etching solution used in indium tin oxide layer is hydrochloric acid, nitric acid, oxalic acid or above-mentioned any combination.
Wherein, which is copper, aluminium, tin, tin alloy, nickel alloy or above-mentioned any combination.
Wherein, the indium tin oxide layer is towards at least one second etching spacing of direction etching different from the conductive layer, this second
It is 90 °~100 ° that etching spacing, which is formed by angle,.
Wherein, it is 100 °~115 ° which, which is formed by angle with the indium tin oxide layer,.
Wherein, it is 90 °~95 ° which, which is formed by angle,.
Wherein, the average value of the indium tin oxide layer surface evenness is 1%~5%.
Wherein, the indium tin oxide layer thickness is between 0.05~1.5 μm, and the conductive layer thickness is between 1~70 μm.
Wherein, the conductive layer thickness is between 1~36 μm.
Wherein, the indium tin oxide layer is deposited on a wherein surface for the conductive layer with physical vapour deposition (PVD), chemical gas
Mutually deposition or coating method carry out.
Film resistance structure through the invention, it uses the surfaces that the indium tin oxide layer is deposited on the conductive layer, and
The etching angle for controlling conductive layer and indium tin oxide layer can be closer to designed resistance when etching angle closer to 90 °
Value, the film resistor can be allowed, which to be promoted on surface evenness, stability and compact crystallization degree, more excellent control；Furthermore
Since the indium tin oxide layer has the characteristic that material homogenieity is good, compact structure, environmental resistance ability are good, the film can be allowed
Resistance has the characteristic of high frequency and promotes surface uniformity, reduces and uses a large amount of coffret, noise ratio is effectively reduced, and make
Resistance maintains to stablize；In addition, the regulatable interval range of the resistance value becomes wide, no longer only limits to certain sections, but 5 can be adjusted
Ω/~375 Ω/ spacing range.
In conclusion the surface uniformity of the film resistor of the invention is good, high frequency characteristics is good, resistance value regulation rate is good,
Process stability is good, further increase manufacturing yield, and production unit cost is allowed to decline, and facilitates low end (such as earphone, memory
Body) promotion, open high-order product (such as antenna, RF transmitting chip) application, this case also can by the film resistor be applied to hand
The resistor assembly of machine sound chip.
Related the technology used in the present invention, means and its effect hereby lift preferred embodiment and schema are cooperated to be described in detail
Yu Hou, it is believed that above-mentioned purpose, construction and the feature of the present invention, when can by one deeply specifically understand.
Detailed description of the invention
Fig. 1 is the sectional view that film resistor of the present invention etches conductive layer.
Fig. 2 is the partial enlargement diagram of Fig. 1.
Fig. 3 is the sectional view that film resistor of the present invention etches conductive layer and indium tin oxide layer.
Fig. 4 is the sectional view that film resistance structure part of the present invention etches conductive layer and part is etched to indium tin oxide layer.
Fig. 5 is the section partial enlargement diagram of usual film resistance structure.
Specific embodiment
Fig. 1 system discloses the first embodiment of this case, and the present embodiment is 120 ° as example using θ °, but does not limit θ ° and count thus
Value；One film resistor 10 is made of a conductive layer 14 and an indium tin oxide layer 12, the one side setting of the indium tin oxide layer 12
In on a bottom plate 20, another side is deposited on a surface of the conductive layer 14, and 14 surface of conductive layer etching is multiple to the oxidation
The width of first etching spacing J of indium tin layer 12, those first etchings spacing J are tapered to the indium tin oxide layer from the conductive layer 14
12, the two sides angle of those first etchings spacing J, is to be contacted from the corresponding indium tin oxide layer 12 with the conductive layer 14
Surface as θ ° of initial sheet to the conductive layer 14 be 120 °, the regulatable resistance value system of film resistor 10 between 5 Ω/
Between~375 Ω/.
Wherein, etching solution used in the conductive layer 14 be iron chloride, copper chloride, ammonium hydroxide or above-mentioned any combination,
Etching solution used in the indium tin oxide layer 12 is hydrochloric acid, nitric acid, oxalic acid or above-mentioned any combination.
Wherein, which is copper, aluminium, tin, tin alloy, nickel alloy or above-mentioned any combination.
Above-mentioned deposition system is with the progress of physical vapour deposition (PVD), chemical vapor deposition or coating method.
It is found that a thickness S1 of the indium tin oxide layer 12 is between 0.05~1.5 μm as shown in Fig. 1, Fig. 2, the conduction
Layer 14 a thickness S2 is between 1~70 μm and optimum thickness system is between 1~36 μm, the indium tin oxide layer 12 is in difference
The homogeneity of electrical resistance that position measures is 1%~5%, and since high and low fall value H is more gentle, surface uniformity is preferable,
Therefore the difficult to reduce resistance value of electron transfer can be reduced, and since the homogenieity of material is preferable, high-frequency signals are transmitted across
Cheng Zhong, the interface that will affect transmission efficiency is less, therefore the signal noise ratio in high-frequency signals transmission process can be improved
(Signal-to-Noise Ratio) furthermore can more reduce the setting of other additional metal interfaces, promote high frequency characteristics simultaneously
Reduce noise ratio.
Fig. 3 system discloses the second embodiment of this case, and the present embodiment is 90 ° as example for 100 °, ω ° using θ °, but unlimited
Determine θ ° and ω ° numerical value thus, and being limited to 90 ° for ω ° is the angle because of ω ° closer to 90 °, more the resistance value of design can be allowed to reach
To expected numerical value；Such as the resistance value of the film resistor expected from the present embodiment is 25 Ω/, can first calculate and need before etching
It is 25 Ω/ that how many resistance values, which can be only achieved resistance value, and then 14 surface of conductive layer deposits the indium tin oxide layer 12 formation
The film resistor 10, then the indium tin oxide layer 12 is set on the bottom plate 20,14 surface of conductive layer etching at least one is exposed
To first etching spacing J of the indium tin oxide layer 12, the width system of first etching spacing J is from the conductive layer 14 to the oxidation
Indium tin layer 12 is 100 ° in tapered θ °, is one second etching spacing K from the indium tin oxide layer 12 to the 20 surface system of bottom plate, thoroughly
Overetch etch process makes second ω ° of width perpendicular downward angle for etching spacing K be 90 °, can make the resistance value of this case
Resistance value reach 25 Ω/.
Fig. 4 system discloses the 3rd embodiment of this case, and the present embodiment system discloses 10 system of film resistor by 14 knot of conductive layer
It closes the indium tin oxide layer 12 to form, and 12 system of indium tin oxide layer is set on the bottom plate 20, the surface of the film resistor 10 can
Multiple first etching spacing J and multiple second etching spacing K are etched, those multiple first etchings spacing J systems are etched to the conduction
The surface of layer 14, those multiple second etchings spacing K systems etch through the indium tin oxide layer 12, keep the film resistor 10 controllable
Resistance value system between 5 Ω/~375 Ω/.
Claims (10)
1. a kind of film resistance structure, characterized by comprising:
One film resistor, comprising a conductive layer and in depositing an indium tin oxide layer on a wherein surface for the conductive layer, the conduction
Exposed first to the indium tin oxide layer of layer surface etching at least one etches spacing, the first etching spacing and the indium tin oxide layer
Being formed by angle is 90 °~120 °, and the regulatable resistance value system of the film resistor is between 5 Ω/~375 Ω/.
2. film resistance structure as described in claim 1, which is characterized in that etching solution used in the conductive layer is chlorination
Iron, copper chloride, ammonium hydroxide or above-mentioned any combination；Etching solution used in the indium tin oxide layer be hydrochloric acid, nitric acid, oxalic acid or
Above-mentioned any combination.
3. film resistance structure as described in claim 1, which is characterized in that the conductive layer is copper, aluminium, tin, tin alloy, nickel conjunction
Golden or above-mentioned any combination.
4. film resistance structure as described in claim 1, which is characterized in that the indium tin oxide layer is towards different from the conductive layer
At least one second etching spacing of direction etching, it is 90 °~100 ° which, which is formed by angle,.
5. film resistance structure as described in claim 1, which is characterized in that first etching is formed with the indium tin oxide layer
Angle be 100 °~115 °.
6. film resistance structure as claimed in claim 4, which is characterized in that this second etching be formed by angle be 90 °~
95°。
7. film resistance structure as described in claim 1, which is characterized in that the average value of the indium tin oxide layer surface evenness
It is 1%~5%.
8. film resistance structure as described in claim 1, which is characterized in that the indium tin oxide layer thickness is between 0.05~1.5 μ
Between m, the conductive layer thickness is between 1~70 μm.
9. film resistance structure as claimed in claim 8, which is characterized in that the conductive layer thickness is between 1~36 μm.
10. film resistance structure as described in claim 1, which is characterized in that sink on a wherein surface for the conductive layer
The product indium tin oxide layer is with the progress of physical vapour deposition (PVD), chemical vapor deposition or coating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710906615.4A CN109585412A (en) | 2017-09-29 | 2017-09-29 | Film resistance structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710906615.4A CN109585412A (en) | 2017-09-29 | 2017-09-29 | Film resistance structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109585412A true CN109585412A (en) | 2019-04-05 |
Family
ID=65914389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710906615.4A Pending CN109585412A (en) | 2017-09-29 | 2017-09-29 | Film resistance structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109585412A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3398032A (en) * | 1964-11-27 | 1968-08-20 | Ibm | Method of making cermet resistors by etching |
| US4737757A (en) * | 1985-06-14 | 1988-04-12 | Murata Manufacturing Co., Ltd. | Thin-film resistor |
| CN1764895A (en) * | 2003-03-25 | 2006-04-26 | 3M创新有限公司 | High transparency touch screen |
| CN205179520U (en) * | 2015-12-02 | 2016-04-20 | 金壬海 | Polyimide foam base material coating indium tin oxide film resistor multiply wood |
-
2017
- 2017-09-29 CN CN201710906615.4A patent/CN109585412A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3398032A (en) * | 1964-11-27 | 1968-08-20 | Ibm | Method of making cermet resistors by etching |
| US4737757A (en) * | 1985-06-14 | 1988-04-12 | Murata Manufacturing Co., Ltd. | Thin-film resistor |
| CN1764895A (en) * | 2003-03-25 | 2006-04-26 | 3M创新有限公司 | High transparency touch screen |
| CN205179520U (en) * | 2015-12-02 | 2016-04-20 | 金壬海 | Polyimide foam base material coating indium tin oxide film resistor multiply wood |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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Application publication date: 20190405 |