CN109585327A - The acquisition methods of comprehensive wafer defect - Google Patents
The acquisition methods of comprehensive wafer defect Download PDFInfo
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- CN109585327A CN109585327A CN201811553457.XA CN201811553457A CN109585327A CN 109585327 A CN109585327 A CN 109585327A CN 201811553457 A CN201811553457 A CN 201811553457A CN 109585327 A CN109585327 A CN 109585327A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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Abstract
The invention discloses a kind of acquisition methods of comprehensive wafer defect, it is to utilize scanning electron microscope SEM, for the defect analysis of wafer, the scanning electron microscope SEM, its chamber interior is equipped with multiple electronic receivers, it is evenly distributed on wafer surrounding, the wafer defect photo of 360 degree of panoramas is shot with this.Multiple electronic receivers can be all turned on simultaneously to shoot the distant view photograph of wafer with analyzing defect, moreover it is possible to according to requiring, obtain the defect photo of wafer specific position or angle by opening or closing certain one or more electronic receiver of a certain angle.The source that defect can be effectively judged from wafer defect photo significantly improves the accuracy that engineer judges defect source, improves working efficiency.
Description
Technical field
The present invention relates to semiconductor devices manufacture and testing fields, particularly relate to a kind of acquisition side of comprehensive wafer defect
Method.
Background technique
Scanning electron microscope (SEM:Scanning Electron Microscope) is between transmission electron microscope and optics
A kind of microscopic appearance Observations Means between microscope, can directly can be carried out using the materiality of sample surfaces material and microcosmic be in
Picture.The advantages of scanning electron microscope is that 1. have higher amplification factor, is continuously adjusted between 20~200,000 times；2. having very big
The depth of field, the visual field is big, imaging is rich in three-dimensional sense, can directly observe the fine structure on the uneven surface of various samples；3. sample
Preparation is simple.Current scanning electron microscope is equipped with X-ray energy spectrometer device, can carry out microscopic structure shape simultaneously in this way
The observation of looks and Microanalysis, therefore it is current particularly useful scientific research instrument.
Its working principle is that the interaction of foundation electronics and substance specifically utilizes the superfine high energy of focusing
Electron beam scans on wafer, and the physical message for the multiplicity such as inspire secondary electron and backscattered electron.Electronic receiver pair
These information are received, subsequent to amplify to received information and imaging on related backstage.Since SEM board is originally only pacified
3 electronic receivers are filled, wherein more electronic signal is distributed from surrounding, scanning electron microscope board is once shot only
Three photos, respectively front view can be shot, left view and the right side attempt, and mainly (secondary electron refers to using secondary electron
Radio pounds the electron outside nucleus come.Due to the combination energy very little between atomic nucleus and outer layer valence electron, when the core dispatch from foreign news agency of atom
After son obtains the energy for being greater than and combining energy accordingly from incident electron, atom can be detached from as free electron.If this dissipate
It penetrates process to occur in relatively sample surface layer, the free electron that those energy are greater than work function can escape from sample surfaces
Out, become the free electron in vacuum, i.e., secondary electricity), (backscattered electron refers to be reflected backscattered electron by solid sample atom
A part of incident electron back, including elastic coaxial backscattered electron and non-resilient coaxial backscattered electron) and auger electrons (if
The energy released during atom internal layer transition of electronic energy be not in the form of X-ray release but with the energy by core
Outer another electronics is got, and being detached from atom becomes secondary electron, and this secondary electron is called auger electrons.Because each atom all by
Oneself specific energy of shells, so their auger electrons energy also respectively has characteristic value, energy is within the scope of 50~1500eV)
Equal signals, wherein auger electrons and characteristic X-ray are mainly used for the analysis of surface layer chemical component, secondary electron and back scattering electricity
Son is imaged for substance.
Currently, the shooting of wafer defect photo is all automatic operation, and in order to preferably judge defect from defect photo
Source, it is sometimes desirable to rotating wafer changes shooting angle, and captured photo can not reach requirement sometimes yet, need weight
New operation or relevant operation can not obtain some key messages.
As shown in Figure 1, being the front view shot using scanning electron microscope, but front view can not directly judge defect
Source needs conversion angle to re-shoot, when forming the image of angle as shown in Figure 2, waste of manpower and machine.
Summary of the invention
It, can be quick technical problem to be solved by the present invention lies in a kind of acquisition methods of comprehensive wafer defect are provided
Effectively get the defect of wafer.
To solve the above problems, a kind of acquisition methods of comprehensive wafer defect of the present invention, are for scanning electricity
Sub- microscope SEM, for the defect analysis of wafer.The scanning electron microscope SEM, chamber interior are equipped with multiple electricity
Slave receiver is evenly distributed on wafer surrounding, and the wafer defect photo of 360 degree of panoramas is shot with this.
A further improvement is that the electronic receiver, quantity is no less than 8, installs every 45 degree or more low-angle
One electronic receiver forms a circumference arrangement.
A further improvement is that the electronic receiver, for receiving the secondary electron exhaled from wafer surrounding,
Electronic receipt function more efficiently utilizes secondary electron, backscattered electron and auger electrons signal, fills various secondary electrons
Divide and utilizes.
A further improvement is that the scanning electron microscope SEM, the multiple electronic receipts installed above wafer
Machine can be all turned on simultaneously to shoot the distant view photograph of wafer with analyzing defect, moreover it is possible to according to requiring, by opening or closing certain
One or more electronic receiver of certain of one angle obtains the defect photo of wafer specific position or angle.
A further improvement is that the scanning electron microscope SEM, further includes the electron gun at the top of equipment, to it under
Main chamber's launching electronics beam of side, under directive is located in main chamber after entrance port detector accelerates electron beam, focuses
The wafer cushion cap of side, meanwhile, in the chamber, the top of wafer cushion cap also has outer locator and electronic receiver.
A further improvement is that the electronic beam current that the electron gun emits, bombardment is located at the wafer on wafer cushion cap, makes
The electron escape of crystal column surface, which comes out, forms secondary electron.
A further improvement is that the wafer cushion cap energy support wafer moved in the horizontal plane along X, Y-axis so that electric
Beamlet bombards the different location on wafer, to form the image of different location.
A further improvement is that the secondary electron is electronically received machine reception, and converted to form crystal column surface
Feature image, described image can be used to carry out defect analysis.
The acquisition methods of comprehensive wafer defect of the present invention are on the basis of scanning electron microscope board
In chamber interior to install at least eight electronic receiver no more than 45 degree for interval, secondary electron and back scattering electricity are efficiently utilized
The signals such as son, shoot the wafer defect photo of 360 degrees omnidirection with this, or according to the demand of user by the electricity of a certain angle
Sub-receiver close/open, to shoot required photo.The source of defect can be effectively judged from wafer defect photo, significantly
The accuracy that engineer judges defect source is improved, working efficiency is improved.
Detailed description of the invention
Fig. 1 is the wafer surface defects figure of scanning electron microscope shooting, is front view.
Fig. 2 is the wafer surface defects figure of scanning electron microscope shooting, is the observation chart at oblique 45 degree of angles.
Fig. 3 is the electronic receiver arrangement schematic diagram of scanning electron microscope of the present invention.
Fig. 4 is the electronic receiver arrangement schematic diagram of scanning electron microscope of the present invention, and is top view.
Description of symbols
1 is bracket, and 2 be electron gun, and 3 be entrance detector, and 4 be wafer cushion cap, and 5 be main chamber, and 6 be electronic receiver.
Specific embodiment
A kind of acquisition methods of comprehensive wafer defect of the present invention are to utilize scanning electron microscope SEM, for
The defect analysis of wafer.The scanning electron microscope SEM, chamber interior are equipped with multiple electronic receivers, uniformly divide
Cloth shoots the wafer defect photo of 360 degree of panoramas with this in wafer surrounding.
The structure of common scanning electron microscope SEM is as shown in Fig. 2, include a main chamber, and be located at main chamber
The electronic beam current generation device of top, which includes the electron gun for generating electronic beam current, to master
The direction launching electronics line of chamber, is accelerated, after focus processing by devices such as the detectors of entrance, into main chamber
Portion.One wafer cushion cap is arranged at main chamber bottom, can carry a certain range of movement that wafer carries out horizontal plane.Electronic beam current exists
Into after main chamber, wafer of the high velocity bombardment on cushion cap, to excite secondary electron.Wafer cushion cap is moved with wafer in horizontal plane
It is dynamic, so that electron beam is bombarded the different location in crystal column surface, carries out the imaging of different location.
Above main chamber, around the periphery of wafer, also there is electronic receiver, to receive beam bombardment crystal column surface
It is formed by secondary electron.The electronic receiver of common scanning electron microscope installation is 3, in 120 degree of angle arrangements, is divided
Cloth is in wafer periphery.Since 3 electronic receivers are distributed get Tai Kai, camera site covers not intensive enough, leads to wafer very
Defect shooting on multiposition is not clear enough, the required precision for carrying out defect analysis is not achieved, sometimes in order to shoot a certain angle
The wafer defect of degree needs to rotate wafer repeatedly, to reach optimal shooting angle, formed clearly, meet what analysis required
Electron scanning micrograph.This will lead to the waste of manpower and board working hour, and efficiency is lower.In consideration of it, present invention optimization is swept
Retouch electron microscope, by the electronic receiver, quantity increases to no less than 8, as shown in figure 3, in this way every 45 degree or
Even more low-angle (in the case where more than 8) one electronic receiver of installation, forms a circumference arrangement.
No less than 8 electronic receivers, receive the electronics exhaled from wafer surrounding in all directions, can be more
Secondary electron, backscattered electron and auger electrons signal are efficiently utilized, various secondary electrons is made to be fully utilized.
The scanning electron microscope SEM, the multiple electronic receivers installed above wafer, can be all turned on simultaneously
To shoot the distant view photograph of wafer with analyzing defect, moreover it is possible to according to requiring, by open or close a certain of a certain angle or
More electronic receivers obtain the defect photo of wafer specific position or angle.For example, by taking top view shown in Fig. 4 as an example,
It arranges to form a circumference with 45 degree of angles comprising 8 electronic receivers 6, by wafer central around encirclement.With 12 o'clock direction for 0 degree,
45 degree, 90 degree, 135 degree, 180 degree, 225 degree, 270 degree, 315 degree, 360 degree (0 degree) are sequentially formed clockwise.When needing to clap
It is when taking the photograph 360 degree of panoramic pictures of wafer, 8 all electronic receivers are fully open, then 8 all electronic receivers are all
Secondary electron can be received, panoramic picture is formed.When only needing to shoot the image of wafer of a certain precision, for example only need to clap
The wafer image of 225 degree of positions is taken the photograph, then just closing the electronic receiver of remaining position, only opens the electronics of 225 degree of positions
Receiver is shot.Alternatively, needing to shoot the image etc. of other 2 or 3 positions, its corresponding 2 are just accordingly opened
Or the electronic receiver of 3 positions, and the electronic receiver of uncorrelated position is closed.In this case, lacking for wafer is being carried out
When falling into image acquisition, wafer can be moved as few as possible, and can obtain 360 degree of panoramic pictures of wafer or certain list to fast and flexible
The close-up image of one position, efficiency greatly improve.
The above is only a preferred embodiment of the present invention, is not intended to limit the present invention.Come for those skilled in the art
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any modification, equivalent
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of acquisition methods of comprehensive wafer defect are using scanning electron microscope SEM, for the defect point of wafer
Analysis, it is characterised in that: the scanning electron microscope SEM, chamber interior are equipped with multiple electronic receivers, are uniformly distributed
In wafer surrounding, the wafer defect photo of 360 degree of panoramas is shot with this.
2. the acquisition methods of comprehensive wafer defect as described in claim 1, it is characterised in that: the electronic receiver,
Quantity is no less than 8, installs an electronic receiver every 45 degree or more low-angle, forms a circumference arrangement.
3. the acquisition methods of comprehensive wafer defect as described in claim 1, it is characterised in that: the electronic receiver,
For receiving the secondary electron exhaled from wafer surrounding, electronic receipt function more efficiently utilizes secondary electron, back scattering
Electronics and auger electrons signal, make various secondary electrons be fully utilized.
4. the acquisition methods of comprehensive wafer defect as described in claim 1, it is characterised in that: the scanning electron microscopy
Mirror SEM, the multiple electronic receivers installed above wafer can be all turned on simultaneously to shoot the distant view photograph of wafer to analyze
Defect, moreover it is possible to according to requiring, wafer spy is obtained by opening or closing certain one or more electronic receiver of a certain angle
Positioning is set or the defect photo of angle.
5. the acquisition methods of comprehensive wafer defect as described in claim 1, it is characterised in that: the scanning electron microscopy
Mirror SEM further includes the electron gun at the top of equipment, to main chamber's launching electronics beam below, through entrance port detector to electronics
Directive is located at the wafer cushion cap of lower section in main chamber after Shu Jinhang accelerates, focuses, meanwhile, in the chamber, the top of wafer cushion cap,
Also there is outer locator and electronic receiver.
6. the acquisition methods of comprehensive wafer defect as claimed in claim 5, it is characterised in that: the electron gun transmitting
Electronic beam current, bombardment are located at the wafer on wafer cushion cap, come out the electron escape of crystal column surface and form secondary electron.
7. the acquisition methods of comprehensive wafer defect as claimed in claim 5, it is characterised in that: the wafer cushion cap can be held
Wafer is ask to move in the horizontal plane along X, Y-axis, so that different location of the beam bombardment on wafer, to form different location
Image.
8. the acquisition methods of comprehensive wafer defect as claimed in claim 6, it is characterised in that: the secondary electron is electric
Slave receiver receives, and the feature image of crystal column surface is formed by converting, and described image can be used to carry out defect analysis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811553457.XA CN109585327A (en) | 2018-12-19 | 2018-12-19 | The acquisition methods of comprehensive wafer defect |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811553457.XA CN109585327A (en) | 2018-12-19 | 2018-12-19 | The acquisition methods of comprehensive wafer defect |
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| Publication Number | Publication Date |
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| CN109585327A true CN109585327A (en) | 2019-04-05 |
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| CN201811553457.XA Pending CN109585327A (en) | 2018-12-19 | 2018-12-19 | The acquisition methods of comprehensive wafer defect |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3513500B2 (en) * | 2001-10-31 | 2004-03-31 | アプライド マテリアルズ インコーポレイテッド | Substrate inspection method and substrate inspection device |
| US7456636B2 (en) * | 2006-03-29 | 2008-11-25 | International Business Machines Corporation | Test structures and method of defect detection using voltage contrast inspection |
| CN102374996A (en) * | 2011-09-23 | 2012-03-14 | 西安交通大学 | Multicast detection device and method for full-depth tooth side face defects of bevel gear |
| US20120092656A1 (en) * | 2009-07-01 | 2012-04-19 | Toshiyuki Nakao | Defect Inspection Method and Defect Inspection Apparatus |
| CN103325708A (en) * | 2013-05-28 | 2013-09-25 | 上海华力微电子有限公司 | Wafer defect crosscutting observation device |
-
2018
- 2018-12-19 CN CN201811553457.XA patent/CN109585327A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3513500B2 (en) * | 2001-10-31 | 2004-03-31 | アプライド マテリアルズ インコーポレイテッド | Substrate inspection method and substrate inspection device |
| US7456636B2 (en) * | 2006-03-29 | 2008-11-25 | International Business Machines Corporation | Test structures and method of defect detection using voltage contrast inspection |
| US20120092656A1 (en) * | 2009-07-01 | 2012-04-19 | Toshiyuki Nakao | Defect Inspection Method and Defect Inspection Apparatus |
| CN102374996A (en) * | 2011-09-23 | 2012-03-14 | 西安交通大学 | Multicast detection device and method for full-depth tooth side face defects of bevel gear |
| CN103325708A (en) * | 2013-05-28 | 2013-09-25 | 上海华力微电子有限公司 | Wafer defect crosscutting observation device |
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Application publication date: 20190405 |
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