CN109580736A - Senser element and preparation method thereof based on double-gate structure oxide thin film transistor - Google Patents
Senser element and preparation method thereof based on double-gate structure oxide thin film transistor Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 103
- 239000003792 electrolyte Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 8
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 7
- 238000001459 lithography Methods 0.000 claims abstract description 4
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000007784 solid electrolyte Substances 0.000 claims description 12
- 239000011244 liquid electrolyte Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 230000004043 responsiveness Effects 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229960001296 zinc oxide Drugs 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000002608 ionic liquid Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- -1 silica Compound Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/302—Electrodes, e.g. test electrodes; Half-cells pH sensitive, e.g. quinhydron, antimony or hydrogen electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Life Sciences & Earth Sciences (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electrochemistry (AREA)
- General Health & Medical Sciences (AREA)
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- Pathology (AREA)
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- Ceramic Engineering (AREA)
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Abstract
The present invention relates to semiconductor sensor device technical fields, more particularly, to a kind of senser element and preparation method thereof based on double-gate structure oxide thin film transistor；Including heavily-doped Si hearth electrode；The bottom gate dielectric layer being covered on above heavily-doped Si hearth electrode；The metal-oxide semiconductor (MOS) active layer being connect with bottom gate dielectric layer；Source/drain electrode is Chong Die with active layer after lithography stripping；Source-drain electrode insulating protective layer is covered on the whole surface of device, exposes electrode lead portion and active layer part；The electrolyte top gate medium layer being covered on active layer and insulating protective layer；The top-gated electrode contacted with electrolyte is located at right above electrolyte top gate medium layer.Sensor structure provided by the invention is simple, operating voltage is low, pH responsiveness is high.
Description
Technical field
The present invention relates to semiconductor sensor device technical fields, are based on double-gate structure oxide more particularly, to one kind
Senser element of thin film transistor (TFT) and preparation method thereof.
Background technique
With the continuous development of science and technology, the combination of biology and information is more and more tighter, conveniently and efficiently obtains biological information pair
Contemporary medical treatment and the development of wearable device are most important.PH value is as the most direct form of expression of bioreacter, with biology
The multiple fields such as medicine, environmental monitoring, judicial expertise have close association, thus develop a kind of pH sensor of high sensitivity
Part has very important meaning.Currently, the detection method of pH value is mainly based upon the chemical reaction templates such as pH test paper, sensitivity
The low demand for being unable to satisfy biological field.
Since the 1970s, with ion-sensitive field effect transistor (ISFET) detection pH variation and ion concentration
Electronic sensor attract wide attention, it have batch production, high sensitivity, be easy to miniaturization and it is simultaneous with CMOS technology
The advantages such as capacitive is good.The core of this ISFET device is MOS field effect transistor, in structure gate electrode by chemical-sensitive film,
Replaced solution and reference electrode, the ion in solution passes through the potential for changing active layer surface, to change transistor channel
Curent change, realize test to pH value.However, traditional ISFET, according to nernst theory, sensitivity limit is
59.2mv/pH.It is extremely urgent come the susceptibility for improving pH sensor to find a kind of new device architecture.
Summary of the invention
The present invention in order to overcome at least one of the drawbacks of the prior art described above, provides a kind of based on double-gate structure oxide
Senser element of thin film transistor (TFT) and preparation method thereof, the sensor structure of preparation is simple, operating voltage is low, pH responsiveness is high.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: one kind being based on double-gate structure sull
The senser element of transistor, including heavily-doped Si hearth electrode；The bottom gate dielectric layer being covered on above heavily-doped Si hearth electrode；It is situated between with bottom gate
The metal-oxide semiconductor (MOS) active layer of matter layer connection；Source/drain electrode is Chong Die with active layer after lithography stripping；Source-drain electrode
Insulating protective layer is covered on the whole surface of device, exposes electrode lead portion and active layer part；Be covered in active layer and
Electrolyte top gate medium layer on insulating protective layer；The top-gated electrode contacted with electrolyte is being located at electrolyte top gate medium layer just
Top.Double-gate structure TFT obtains higher capacitive coupling value, is expected to make to pass by designing the gate dielectric layer up and down of different capacitors
Sensor breaks through the limitation of the Nernst limit, realizes higher sensing responsive degree.Oxide semiconductor thin-film transistor (TFT) due to
The advantages that preparation temperature is low, uniformity is good, mobility is high is used widely in fields such as displays.The invention patent is based on oxidation
Object thin film transistor (TFT), design device architecture are double-gate structure, introduce electric double layer bulky capacitor sensitivity top-gated dielectric, obtain high ph-values
Susceptibility senser element.
Further, the capacitor of the top gate medium layer is 50 times or more of the capacitor of the bottom gate dielectric layer, relatively
In the small capacitances (100 nm thickness SiO2,34.5 nF/cm2) of bottom gate dielectric layer), top gate medium layer has bulky capacitor.Double-gate structure
TFT sensor, increase the charge that induces in transistor channel of detecting material by using bulky capacitor top gate medium layer,
The amount and top-gated of charge inducing and the ratio of bottom gate capacitance are positively correlated, and utilize the biggish top-gated of capacitor and the lesser bottom gate of capacitor
Structure can greatly promote the sensitivity of sensor, be expected to break through the sensitivity bottleneck of ISFET.Due to double in electrolyte
Electric layer effect can get super large capacitor, as the capacitance of solid polymer electrolyte reaches 10-100 μ F/cm2, ion it is solidifying
Glue electrolyte capacitance value is greater than 10 μ F/cm2, liquid solution electrolyte capacitance be greater than 5 μ F/cm2Deng these are all than traditional
SiO2 (100 nm thick-layer, 34.5 nF/cm2) dielectric capacitance is higher by two orders of magnitude or more, therefore prepares with electrolyte
For the double-gate structure TFT sensor of top-gated, the electricity in transistor between top-gated (TG) and bottom gate (BG) medium can be greatly utilized
Hold coupling, effectively amplification inductive signal, to realize the susceptibility of biggish detector.It, can in order to simplify device architecture
To directly adopt solution to be measured as top-gated electrolyte medium layer.
Further, metal-oxide semiconductor (MOS) active layer is IGZO, IZO, TGZO or In2O3.With traditional silicon substrate
Material is compared with organic film material, using amorphous state indium-gallium-zinc-oxide (α-InGaZnO), zinc oxide, indium oxide as representative
Metal oxide semiconductor material has area is big, at low cost, carrier mobility is high, visible transparent, growth temperature are low etc.
Advantage, therefore there is bigger development prospect.
Further, the top gate medium layer is the solid electrolyte or liquid electrolyte of corrosion resistance.Top gate medium
Layer can be the solid electrolyte of corrosion resistance, be also possible to liquid electrolyte, comprising solution, ionic liquid etc., be covered in
Active layer collectively forms MIS capacitance structure with top-gated electrode, oxide semiconductor active layer.
Further, solution to be measured is located on solid electrolyte；Alternatively, liquid of the solution to be measured as top gate medium layer
Electrolyte is directly contacted with active layer, and top-gated electrode is then directly contacted with solution to be measured.Solution to be measured be located at top gate medium layer (Gu
State electrolyte) on, the stability of device detection strong acid, strong alkali solution can be improved；Or solution to be measured is as top-gated liquid
The dielectric layer of electrolyte directly then directly contacts with solution to be measured, both leads to semiconductor active layer contact, top-gated electrode
It crosses and introduces the bulky capacitor dielectric layer based on electric double layer effect, improve the sensitivity of sensor.
The present invention also provides a kind of preparation methods of senser element based on double-gate structure oxide thin film transistor, including
Following steps:
S1. heavily-doped Si hearth electrode and bottom gate dielectric layer are prepared, bottom gate dielectric layer uses the SiO2 of conventional thermal oxidation growth；
S2. active layer is prepared using sputtering method；
S3. photoetching is carried out to sull, wet etching completes active layer graph technique；
S4. mask, and source/drain electrode is sputtered, it removes photoresist to form the electrode pattern of needs；
S5. electrode is isolated in negtive photoresist, exposes active layer and electrode lead portion；
S6. top gate medium layer is prepared, top gate medium layer is the solid electrolyte or liquid electrolyte of corrosion resistance, if liquid
State electrolyte is then directly served as by solution to be measured；
S7. top-gated electrode is prepared, is prepared using top-gated electrode when solid electrolyte by splash-proofing sputtering metal, using liquid electrolyte
When, top-gated electrode is directly served as by the tungsten needle for being coated with gold.
Compared with prior art, beneficial effect is: provided by the invention a kind of based on double-gate structure sull crystal
Senser element of pipe and preparation method thereof, solution to be measured as top-gated liquid electrolyte dielectric layer directly and semiconductor active layer
Contact, device architecture is simple, easily prepared；Using bulky capacitor top gate medium layer and relatively small capacitor with electric double layer effect
Bottom gate dielectric layer constitute double-gate structure, make double grid capacitive coupling than maximize, improve transducer sensitivity, break through Nernst reason
By the limitation of the limit.
Detailed description of the invention
Fig. 1 is the cross-sectional view of the structure of oxide thin film transistor sensor in the embodiment of the present invention 1.
Fig. 2 is the transfer characteristic curve that TFT device tests pH in the embodiment of the present invention 1.
Specific embodiment
Attached drawing only for illustration, is not considered as limiting the invention；In order to better illustrate this embodiment, attached
Scheme certain components to have omission, zoom in or out, does not represent the size of actual product；To those skilled in the art,
The omitting of some known structures and their instructions in the attached drawings are understandable.Being given for example only property of positional relationship is described in attached drawing
Illustrate, is not considered as limiting the invention.
Embodiment 1:
As shown in Figure 1, a kind of senser element based on double-gate structure oxide thin film transistor, including heavily-doped Si hearth electrode 1；It covers
Cover the bottom gate dielectric layer 2 above heavily-doped Si hearth electrode 1；The metal-oxide semiconductor (MOS) active layer being connect with bottom gate dielectric layer 2
3；Source/drain electrode 4 is Chong Die with active layer 3 after lithography stripping；4 insulating protective layer 5 of source/drain electrode is covered on the entire of device
Surface, expose electrode lead portion and 3 part of active layer；It is covered in the electrolyte top on active layer 3 and insulating protective layer 5
Gate dielectric layer 6；The top-gated electrode 7 contacted with electrolyte is located at right above electrolyte top gate medium layer 6.
Wherein, the capacitor of top gate medium layer 6 is 50 times or more of the capacitor of the bottom gate dielectric layer 2, is situated between relative to bottom gate
The small capacitances (100 nm thickness SiO2,34.5 nF/cm2) of matter layer 2), top gate medium layer 6 has bulky capacitor.The TFT of double-gate structure
Sensor increases the charge that detecting material is induced in transistor channel, induction by using bulky capacitor top gate medium layer 6
The amount and top-gated of charge and the ratio of bottom gate capacitance are positively correlated, and utilize the biggish top-gated of capacitor and the lesser bottom gate knot of capacitor
Structure can greatly promote the sensitivity of sensor, be expected to break through the sensitivity bottleneck of ISFET.
Metal-oxide semiconductor (MOS) active layer 3 is IGZO, IZO, TGZO or In2O3.With traditional silica-base material and organic
Thin-film material is compared, and is aoxidized using amorphous state indium-gallium-zinc-oxide (α-InGaZnO), zinc oxide, indium oxide as the metal of representative
Object semiconductor material has the advantages that area is big, at low cost, carrier mobility is high, visible transparent, growth temperature are low etc., therefore
With bigger development prospect.
Top gate medium layer 6 is liquid electrolyte；It comprising solution, ionic liquid etc., is covered on active layer 3, with top
Gate electrode 7, oxide semiconductor active layer 3 collectively form MIS capacitance structure.Liquid of the solution to be measured as top gate medium layer 6
Electrolyte is directly contacted with active layer 3, and top-gated electrode 7 is then directly contacted with solution to be measured.Electric double layer effect is based on by introducing
Bulky capacitor dielectric layer, improve the sensitivity of sensor.
The preparation method of the above-described senser element based on double-gate structure oxide thin film transistor specifically include with
Lower step:
S1. the IGZO(indium gallium zinc oxygen with a thickness of 30 nm is sputtered on the heavily-doped Si hearth electrode 1 that growth has thermal oxide silica
Compound) active layer 3；
S2. photoetching is carried out to IGZO film, wet etching completes 3 patterning process of active layer；
S3. mask, and source/drain electrode 4 is sputtered, it removes photoresist to form the electrode pattern of needs；
S4. electrode is isolated in negtive photoresist, exposes active layer 3 and electrode lead portion；
S5. the pH liquid of 8 μ L is titrated as top gate medium layer 6, is covered in it on active layer 3, top-gated electrode 7 is directly by plating
There is the tungsten needle of gold to serve as；And test analysis is carried out with semiconductor parametric tester.
Fig. 2 is transfer characteristic curve of the TFT device under different pH solution in the embodiment of the present invention 1, when test, source and drain electricity
Pressure is Vds=0.05 V.For solution ph from 4 to 9, it is 7 times of traditional ISFET sensitivity limit that sensitivity, which is 393 mv/pH,.
Embodiment 2
The present embodiment is similar with 1 other structures of embodiment, unlike, top gate medium layer 6 is the solid electrolyte of corrosion resistance,
Solution to be measured is located on solid electrolyte；Solution to be measured is located at top gate medium layer 6(solid electrolyte) on, device can be improved
Test the stability of strong acid, strong alkali solution；It is also to improve sensing by introducing the bulky capacitor dielectric layer based on electric double layer effect
The sensitivity of device.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Made any modifications, equivalent replacements, and improvements etc., should be included in the claims in the present invention within the spirit and principle of invention
Protection scope within.
Claims (6)
1. a kind of senser element based on double-gate structure oxide thin film transistor, which is characterized in that including heavily-doped Si hearth electrode
(1)；The bottom gate dielectric layer (2) being covered on above heavily-doped Si hearth electrode (1)；The metal oxide being connect with bottom gate dielectric layer (2)
Semiconductor active layer (3)；Source/drain electrode (4) is Chong Die with active layer (3) after lithography stripping；Source/drain electrode (4) insulation protection
Layer (5) is covered on the whole surface of device, exposes electrode lead portion and active layer (3) part；Be covered in active layer (3) and absolutely
Electrolyte top gate medium layer (6) on edge protective layer (5)；The top-gated electrode (7) contacted with electrolyte is located at electrolyte top-gated
Right above dielectric layer (6).
2. a kind of senser element based on double-gate structure oxide thin film transistor according to claim 1, feature exist
In the capacitor of the top gate medium layer (6) is 50 times or more of the capacitor of the bottom gate dielectric layer (2).
3. a kind of senser element based on double-gate structure oxide thin film transistor according to claim 2, feature exist
In metal-oxide semiconductor (MOS) active layer (3) is IGZO, IZO, TGZO or In2O3.
4. a kind of senser element based on double-gate structure oxide thin film transistor according to claim 2, feature exist
In the top gate medium layer (6) is the solid electrolyte or liquid electrolyte of corrosion resistance.
5. a kind of senser element based on double-gate structure oxide thin film transistor according to claim 4, feature exist
In solution to be measured is located on solid electrolyte；Alternatively, solution to be measured is direct as the liquid electrolyte of top gate medium layer (6)
It is contacted with active layer (3), top-gated electrode (7) is then directly contacted with solution to be measured.
6. a kind of system of the senser element described in any one of claim 1 to 5 based on double-gate structure oxide thin film transistor
Preparation Method, which comprises the following steps:
S1. heavily-doped Si hearth electrode (1) and bottom gate dielectric layer (2) are prepared, bottom gate dielectric layer (2) is using conventional thermal oxidation growth
SiO2；
S2. active layer (3) are prepared using sputtering method；
S3. photoetching is carried out to sull, wet etching completes active layer (3) patterning process；
S4. mask, and source/drain electrode (4) are sputtered, it removes photoresist to form the electrode pattern of needs；
S5. electrode is isolated in negtive photoresist, exposes active layer (3) and electrode lead portion；
S6. it preparing top gate medium layer (6), top gate medium layer (6) is the solid electrolyte or liquid electrolyte of corrosion resistance,
It is then directly served as by solution to be measured if liquid electrolyte；
S7. top-gated electrode (7) are prepared, are prepared using top-gated electrode (7) when solid electrolyte by splash-proofing sputtering metal, using liquid
When electrolyte, top-gated electrode (7) is directly served as by the tungsten needle for being coated with gold.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110865110A (en) * | 2019-11-18 | 2020-03-06 | 中山大学 | Coplanar gate oxide thin film transistor biosensor and preparation method thereof |
| CN111060233A (en) * | 2019-12-03 | 2020-04-24 | 华南理工大学 | Piezoelectric type integrated flexible touch sensor and preparation method thereof |
| CN111640801A (en) * | 2020-06-23 | 2020-09-08 | 上海大学 | Synapse device based on novel quantum dot composite electrolyte layer and preparation method |
| CN112986355A (en) * | 2019-12-12 | 2021-06-18 | 福建海峡石墨烯产业技术研究院有限公司 | Graphene field effect transistor biosensor with double-gate structure and preparation method thereof |
| CN114624308A (en) * | 2020-12-16 | 2022-06-14 | 天马日本株式会社 | Ion sensing apparatus |
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| CN101221985A (en) * | 2007-01-10 | 2008-07-16 | 国际商业机器公司 | Double-grid field effect transistor and its forming method |
| CN105954322A (en) * | 2016-05-20 | 2016-09-21 | 上海交通大学 | Biological/chemical sensor on basis of organic thin-film transistors |
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