CN109580080A - A kind of device and method measuring fluid field pressure at silk based on femtosecond laser - Google Patents
A kind of device and method measuring fluid field pressure at silk based on femtosecond laser Download PDFInfo
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- CN109580080A CN109580080A CN201811642636.0A CN201811642636A CN109580080A CN 109580080 A CN109580080 A CN 109580080A CN 201811642636 A CN201811642636 A CN 201811642636A CN 109580080 A CN109580080 A CN 109580080A
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- quartz ampoule
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- condenser lens
- femtosecond laser
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000012530 fluid Substances 0.000 title claims abstract description 13
- 239000003708 ampul Substances 0.000 claims abstract description 38
- 239000010453 quartz Substances 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000005259 measurement Methods 0.000 claims abstract description 18
- 101000694017 Homo sapiens Sodium channel protein type 5 subunit alpha Proteins 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims abstract description 3
- 239000011159 matrix material Substances 0.000 claims description 3
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- 238000005516 engineering process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006353 environmental stress Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention discloses a kind of device and method based on femtosecond laser at silk measurement fluid field pressure, device includes femto-second laser, ICCD camera, condenser lens, quartz ampoule and computer, condenser lens is placed in the front of quartz ampoule, the focus of condenser lens is located at the inside of quartz ampoule, the laser of femto-second laser outgoing is incident to quartz ampoule after condenser lens focusing, quartz ampoule is closed at both ends and pressure adjustable, quartz ampoule cylindrical surface are equipped with air inlet and air outlet；ICDD camera is placed in the side of quartz ampoule and the femtosecond laser injected in quartz ampoule with femto-second laser is vertical, and for capturing the fluorescence signal generated in quartz ampoule and imaging, computer finally obtains quartzy overpressure to carry corresponding software progress data processing.The non-invasive measurement to quasi-static environments gas pressure can be achieved in the present invention.
Description
Technical field
The present invention relates to femtosecond laser measuring techniques and gas field of sensing technologies, are swashed more particularly to one kind based on femtosecond
Light measures the device and method of fluid field pressure at silk.
Background technique
Pressure is the significant process parameter in the industry such as production process and Aeronautics and Astronautics, and the more pressure of current application is surveyed
Amount device is various pressure sensors.With the continuous progress of technology and to survey pressure request continuous improvement, pressure sensor
It is gradually developed, the pressure sensor most started is mechanical pressure sensors, and such as widely used air gauge is bellows-type
Air pressure table structure, but this kind of pressure sensor is difficult to use in the automatic control system in industry, and dynamic response has been unable to satisfy
It is required that.Then the semiconductor material based on piezoresistive effect starts in the design applied to sensor, forms using non electrical quantity electricity
The semiconductor pressure sensor [1-2] of survey method, small in size, measurement accuracy, linearity etc. are sensed compared to mechanical compression
Device increases, but the temperature characterisitic of this kind of sensor is poor, and technics comparing is complicated.Due to VLSI Design skill
There is MEMS (MEMS) pressure sensor in the very fast development of art, body micro-processing technology, surface micro-fabrication technology etc.
[3], including piezoresistive pressure sensor, capacitance pressure transducer, resonance type pressure sensor etc..This kind of sensor makes
With MEMS technology, there is small in size, low in energy consumption, high sensitivity, high reliablity and can work in more adverse circumstances
Advantage promotes micromation, the multifunction, intelligent development of sensor.But MEMS processing is a large amount of traditional in addition to using
IC technique, it is also necessary to some special process, such as two-sided etching, dual surface lithography etc., and requirement of the MEMS to encapsulation technology is very high.
In recent years, a kind of novel pressure sensor is optical pressure sensor [4-5], mainly there is several types: light intensity formula pressure passes
Sensor, polarized light type pressure sensor and phase type (interference formula) pressure sensor.Currently, optical pressure sensor is anti-by it
The performances such as radiation, anti-electromagnetic field interference, size is small, high sensitivity, precision height, are suitble in space, the contour radiation in desert, high temperature etc.
The advantages of applying in extreme environment is developed rapidly.But above-mentioned pressure sensor is the survey for realizing pressure in enclosed environment
Amount.Femto-second laser is quickly grown in recent years, the big hot spot for becoming research at silk characteristic generated by self-focusing effect.Fly
The line style and the pressure in surveyed environment of second laser filament [6] have certain relationship, this also provides one more for pressure measurement
For simple accurate method, and it is expected to realize the measurement of gas pressure in open environment.
Bibliography:
(1)Tun T N,Lok T S,Jui T C,et al.Contact pressure measurement using
silicon-based Alx Ga1-x As semiconductor pressure sensors[J].Sensors&Actuators
A Physical,2005,118(2):190-201.
(2) semiconductor pressure sensor, application number: CN201480053329.2, the applying date: 2014.10.03, applicant:
K.K. Tokura
(3)Pryputniewicz,Ryszard J,Furlong,et al.Design by analysis of a MEMS
pressure sensor[M].Society of Photo-Optical Instrumentation Engineers,2002.
(4)Rodriguez G,Sandberg R L,Udd E.High pressure sensing and dynamics
using high speed fiber Bragg grating interrogation systems[C]//SPIE Sensing
Technology+Applications.2014.
(5) it is used for the optical sensor of non-contact pressure measurement, application number: CN201480003344.6, the applying date:
2014.01.30 applicant: radium-shine Co., Ltd
(6)P A Chizhov,V V Bukin,A A Ushakov,et al.Features of the electron
density dynamics in the filamentation of femtosecond laser radiation in air
at elevated pressure[J].Quantum Electronics,2016,46(4):332–334.
Summary of the invention
Purpose of the invention is to overcome the shortcomings in the prior art, by simplify laser signal and surveyed environmental pressure it
Between conversion relation, realize the non-invasive measurement of pressure in open flow field, a kind of measured based on femtosecond laser at silk be provided and is flowed
The device and method of field pressure establishes mathematical relationship at silk thread type and surveyed environmental pressure by femtosecond laser.The present invention from fly
The second line style of laser filament is started with, and in a low pressure environment, is generated by analysis laser line-type with the variation of surveyed environmental stress
Difference, establish femtosecond laser into the mathematical relationship between silk thread type and surveyed environmental stress, realize to quasi-static environments gas
The non-invasive measurement of pressure.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of device measuring fluid field pressure at silk based on femtosecond laser, including femto-second laser, ICCD camera, focusing are thoroughly
Mirror, quartz ampoule and computer, the condenser lens are placed in the front of quartz ampoule, and the focus of condenser lens is located at the interior of quartz ampoule
Portion, the laser of femto-second laser outgoing are incident to quartz ampoule after condenser lens focusing, quartz ampoule it is closed at both ends and
Pressure adjustable, quartz ampoule cylindrical surface are equipped with air inlet and air outlet；ICDD camera is placed in the side of quartz ampoule and and femtosecond
The femtosecond laser that laser is injected in quartz ampoule is vertical, for capturing the fluorescence signal generated in quartz ampoule and imaging, the meter
Calculation machine finally obtains quartzy overpressure to carry corresponding software progress data processing.
A method of fluid field pressure is measured at silk based on femtosecond laser, comprising the following steps:
(1) laser of femto-second laser outgoing enters in quartz ampoule closed at both ends after condenser lens focusing；
(2) fluorescence is generated after femtosecond laser and quartzy inner air tube interaction；
(3) it ICCD cameras capture fluorescence signal and is imaged, using the MATLAB software programming program in computer to image
Carry out data processing；Specific step is as follows:
A. it reads the image that ICCD is captured and subtracts background signal, interception has the region of fluorescence signal；
B. truncated picture matrix is longitudinally summed it up, obtains the distribution situation of the fluorescence signal intensity of interception area；
C. pressure information is calculated.
Further, this method can realize the measurement that 20 atmospheric pressure are pressed onto from 0.1 atmosphere.
Compared with prior art, the beneficial effects brought by the technical solution of the present invention are as follows:
1. the pressure measurement method in traditional gaseous environment is all made of pressure sensor, measurement environment can be generated dry
It disturbs, is invasive measurement.The present invention is to measure gas pressure indirectly with the variation of gas pressure at silk thread type using femtosecond laser
Power, it is noiseless to measurement environment, realize the non-invasive measurement to pressure；
2. femtosecond laser is simple at the conversion relation between silk thread type and pressure, measurement accuracy is higher, may be implemented to measure
The measurement of transient pressure in environment.
3. eliminating and turning the invention avoids a series of processes such as electric signal are converted by the variation for measuring pressure in environment
Issuable error during changing, and simplify data handling procedure.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention.
Appended drawing reference: 1- femto-second laser, 2- condenser lens, 3- quartz ampoule, 4-ICCD camera, 5- computer
Specific embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that described herein
Specific embodiment be only used to explain the present invention, be not intended to limit the present invention.
The present invention realizes the non-intruding of pressure in flow field by analysis femtosecond laser at silk thread type with the variation of fluid field pressure
Property measurement.
As shown in Figure 1, measuring device of the invention by femto-second laser 1, condenser lens 2, quartz ampoule 3, ICCD camera 4,
Computer 5 forms.
It is carried out by the method that above-mentioned measuring device measures fluid field pressure by following step: what femto-second laser 1 issued
After femtosecond laser line focus lens 2 focus, quartz ampoule 3 (3 cylindrical surface of quartz ampoule is equipped with air inlet and air outlet), spherical surface are passed through
Mirror foci is in inside quartz ampoule, and ICCD camera 4 is placed on the position vertical with femtosecond laser, captures the fluorescence generated in quartz ampoule
Signal is simultaneously imaged, and finally image is analyzed and handled using the MATLAB software in computer 5.
Its working principles are as follows: the laser that femto-second laser issues is focused through spherical mirror, stone closed at both ends is subsequently entered
In English pipe, quartzy overpressure is adjustable.Spherical surface mirror foci is located in quartz ampoule, and gas interacts in femtosecond laser and quartz ampoule
After can generate fluorescence, laser vertical direction place ICCD cameras capture fluorescence signal and be imaged.Using in computer
MATLAB software programming program carries out data processing to image.
Data handling procedure is as follows: first with the MATLAB software programming program in computer, program general idea are as follows:
Image is read first and subtracts background signal, and interception has the region of fluorescence signal；Then truncated picture matrix is longitudinally summed it up,
Obtain the distribution situation of the fluorescence signal intensity of interception area；And then calculate pressure information.
The measurement that 20 atmospheric pressure are pressed onto from 0.1 atmosphere can be achieved in the present invention, and measurement accuracy is substantially mentioned compared with conventional method
It rises.
The present invention is not limited to embodiments described above.Above the description of specific embodiment is intended to describe and say
Bright technical solution of the present invention, the above mentioned embodiment is only schematical, is not restrictive.This is not being departed from
In the case of invention objective and scope of the claimed protection, those skilled in the art may be used also under the inspiration of the present invention
The specific transformation of many forms is made, within these are all belonged to the scope of protection of the present invention.
Claims (4)
1. a kind of device for measuring fluid field pressure at silk based on femtosecond laser, which is characterized in that including femto-second laser, ICCD phase
Machine, condenser lens, quartz ampoule and computer, the condenser lens are placed in the front of quartz ampoule, and the focus of condenser lens is located at
The laser of the inside of quartz ampoule, the femto-second laser outgoing is incident to quartz ampoule after condenser lens focusing；ICDD phase
Machine is placed in the side of quartz ampoule and the femtosecond laser injected in quartz ampoule with femto-second laser is vertical, for capturing in quartz ampoule
The fluorescence signal and imaging, the computer of generation finally obtain quartz ampoule internal pressure to carry corresponding software progress data processing
Power.
2. a kind of device for measuring fluid field pressure at silk based on femtosecond laser according to claim 1, which is characterized in that described
Quartz ampoule is closed at both ends and pressure adjustable, quartz ampoule cylindrical surface are equipped with air inlet and air outlet.
3. a kind of method for measuring fluid field pressure at silk based on femtosecond laser, based on measurement fluid field pressure described in claim 1
Device, which comprises the following steps:
(1) laser of femto-second laser outgoing enters in quartz ampoule closed at both ends after condenser lens focusing；
(2) fluorescence is generated after femtosecond laser and quartzy inner air tube interaction；
(3) it ICCD cameras capture fluorescence signal and is imaged, image is carried out using the MATLAB software programming program in computer
Data processing；Specific step is as follows:
A. it reads the image that ICCD is captured and subtracts background signal, interception has the region of fluorescence signal；
B. truncated picture matrix is longitudinally summed it up, obtains the distribution situation of the fluorescence signal intensity of interception area；
C. pressure information is calculated.
4. a kind of method for measuring fluid field pressure at silk based on femtosecond laser according to claim 3, which is characterized in that the party
Method can realize the measurement that 20 atmospheric pressure are pressed onto from 0.1 atmosphere.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811642636.0A CN109580080A (en) | 2018-12-29 | 2018-12-29 | A kind of device and method measuring fluid field pressure at silk based on femtosecond laser |
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| CN201811642636.0A CN109580080A (en) | 2018-12-29 | 2018-12-29 | A kind of device and method measuring fluid field pressure at silk based on femtosecond laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112082691A (en) * | 2020-08-24 | 2020-12-15 | 西安交通大学 | Low-pressure measuring method and device based on laser plasma imaging |
| CN114689898A (en) * | 2022-03-30 | 2022-07-01 | 中国人民解放军国防科技大学 | Device and method for observing femtosecond laser filamentation impact cloud droplets |
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| CN1587936A (en) * | 2004-07-22 | 2005-03-02 | 上海天竹机电科技有限公司 | Pressure measuring and analytic device based on image information processing technology |
| CN104907568A (en) * | 2015-06-25 | 2015-09-16 | 武汉大学 | Piezoresistive thick film pressure sensor manufacturing method based on femtosecond laser composite technology |
| CN105784220A (en) * | 2016-05-03 | 2016-07-20 | 中国空气动力研究与发展中心高速空气动力研究所 | Method for improving measurement accuracy of pressure-sensitive coating |
| CN108348180A (en) * | 2015-09-04 | 2018-07-31 | 波士顿科学国际有限公司 | Pressure sensing seal wire |
| CN108761126A (en) * | 2018-03-16 | 2018-11-06 | 天津大学 | A kind of speed measuring device and method based on femtosecond laser photochemical luminescence |
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2018
- 2018-12-29 CN CN201811642636.0A patent/CN109580080A/en active Pending
Patent Citations (5)
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| CN1587936A (en) * | 2004-07-22 | 2005-03-02 | 上海天竹机电科技有限公司 | Pressure measuring and analytic device based on image information processing technology |
| CN104907568A (en) * | 2015-06-25 | 2015-09-16 | 武汉大学 | Piezoresistive thick film pressure sensor manufacturing method based on femtosecond laser composite technology |
| CN108348180A (en) * | 2015-09-04 | 2018-07-31 | 波士顿科学国际有限公司 | Pressure sensing seal wire |
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Non-Patent Citations (1)
| Title |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112082691A (en) * | 2020-08-24 | 2020-12-15 | 西安交通大学 | Low-pressure measuring method and device based on laser plasma imaging |
| CN114689898A (en) * | 2022-03-30 | 2022-07-01 | 中国人民解放军国防科技大学 | Device and method for observing femtosecond laser filamentation impact cloud droplets |
| CN114689898B (en) * | 2022-03-30 | 2024-01-12 | 中国人民解放军国防科技大学 | Device and method for observing femtosecond laser wire-forming impact cloud droplet |
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