CN109580023A - Using call wire as the temperature sensor of substrate - Google Patents
Using call wire as the temperature sensor of substrate Download PDFInfo
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- CN109580023A CN109580023A CN201811135372.XA CN201811135372A CN109580023A CN 109580023 A CN109580023 A CN 109580023A CN 201811135372 A CN201811135372 A CN 201811135372A CN 109580023 A CN109580023 A CN 109580023A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
Abstract
The temperature sensor for being configured to monitoring temperature includes: the first call wire；Second call wire, wherein first and second call wire has respectively different transverse cross-sectional sizes；Sensing circuit is coupled to first and second call wire, and is configured to determine the logic state of output signal based on the difference between the signal level being individually present on first and second call wire；And control circuit, it is coupled to sensing circuit, and be configured to the logic state based on decision, to determine that monitoring temperature is above or below predefined threshold temperature.
Description
Technical field
This disclosure relates to a kind of sensing element, and in particular to using call wire as the temperature sensing of substrate
Element.
Background technique
Cause for the swift and violent zoom technology of the development of high-effect integrated circuit close in interconnection line and the electric current in element
Du Genggao, to increase power consumption.In general, a large amount of such dissipated powers are converted into heat, thus cause heat density big
Width is promoted.Each different operation modes of each mac function can be in the corresponding base for forming integrated circuit in high-effect integrated circuit
Lead to temperature gradient on plate.Above situation is produced for lightweight, strong, and saves temperature sensor on the chip of power
Demand, this element can be used for accurate hot showing and penetrate and heat management.
Temperature sensor on a variety of chips is had proposed to meet such demand, since the several years, for example, thermal sensing on chip
Device.In general, hot end instrument is to provide the integral part of one or more additional protective layers in integrated circuit on chip.Chip
Upper hot end instrument can be used to for example by sensing the presence of abnormal temperature, to detect whether integrated circuit is broken into.It can change as a result,
The security protection of good integrated circuit.Hot end instrument also can be used to provide feedback to other brilliant on-chip circuit/components on chip, so that
It obtains they's crystalline substance on-chip circuit/component and adjusts corresponding circuit parameter, avoid generating excessive heat dissipation.A whole set of integrated circuit as a result,
(system) can be more efficient and be reliably operated.
It commonly uses hot end instrument on chip and usually becomes physical effect (for example, voltage) using various temperature to detect/measuring temperature.
Such hot end instrument commonly used can be influenced when being integrated into integrated circuit by various problems.In one example, one or more
Diode (p-n joint element) by becoming the corresponding voltage of Property comparison based on the temperature that voltage reduces to be reduced, to measure temperature
Degree.It would ordinarily be encountered various problems when however, these diodes being integrated into integrated circuit, such as weight carried out to area occupied
New distribution is to accommodate diode and one or more reference circuits, the diode of high power consumption, etc..In another example, pass through
Use half (metal-oxide-semiconductor of golden oxygen；MOS) temperature of transistor becomes limit voltage, MOS transistor quilt
As hot end instrument on chip.Although the size of such hot end instrument based on golden oxygen half is relatively small, and has lower power consumption, will
Hot end instrument based on golden oxygen half, which is integrated into integrated circuit, can still meet with various problems, for example it is difficult to integrated circuit its
Components/circuits are scaled together on his chip, need at least one reference circuit, etc..Therefore, hot on the chip commonly used
Sensor is not entirely satisfactory.
Summary of the invention
The embodiment of this disclosure be about a kind of temperature sensor for being configured to monitoring temperature, it includes:
First call wire；Second call wire, wherein first and second call wire has respectively different transverse cross-sectional sizes；Sensing circuit,
It is coupled to first and second call wire, and is configured to based between the signal level being individually present on first and second call wire
Difference determine output signal logic state；And control circuit, it is coupled to sensing circuit, and be configured to the logic based on decision
State, to determine that monitoring temperature is above or below predefined threshold temperature.
Detailed description of the invention
The aspect of this disclosure is able to understand clearestly when following detailed description is read in conjunction with the figure.It should be noted that each
Kind feature is not necessarily drawn to scale.In fact, the size and geometry of various features can be increased or reduced arbitrarily, so as to
It is apparent in discussing.
Fig. 1 illustrates the block diagram of the temperature sensor according to some embodiments；
Fig. 2 illustrates the exemplary circuit diagram of the part of the temperature sensor of Fig. 1 according to some embodiments；
Fig. 3 illustrates the illustrative plot according to some embodiments, two biographies of the temperature sensor of this figure pictorial image 1
Corresponding relation between the resistance value and temperature of conducting wire；
Fig. 4 illustrates the example waveform according to some embodiments to multiple signals of the temperature sensor of operation diagram 1；
Fig. 5 illustrates the another exemplary circuit diagram of the part of the temperature sensor of Fig. 1 according to some embodiments；
Fig. 6 illustrates the flow chart according to some embodiments to an illustrative methods of the temperature sensor of operation diagram 1；
Fig. 7 illustrates the circuit diagram of another temperature sensor according to some embodiments.
Specific embodiment
Case disclosed below describes various exemplary embodiment with the different characteristic for implementing subject matter.Component is described below
And the particular instance of configuration is to simplify this disclosure.Certainly, this is only example, is not intended to limit.For example, in being described below
Formation of one feature above and over second feature may include fisrt feature directly contacted with second feature and the implementation that is formed
Example, and also may include that additional features are likely to form between fisrt feature and second feature, so that fisrt feature and second feature
The embodiment not directly contacted.In addition, this disclosure can in various examples repeat reference numerals and/or letter.This is repeated
Be by it is simple with it is apparent for the purpose of, and its own do not provide various embodiments discussed herein and/or configuration between relationship.
Moreover, this case may use such as " ... under ", " in ... lower section ", " lower part ", " ... on ", " on
Portion " etc. spatially relative term in order to describe, with describe a device or feature and it is another (or more) device or feature
Relationship, as shown in the drawing.In addition to the orientation being painted in attached drawing, spatially relative term is intended to include that element is being used or grasped
Being differently directed in work.Equipment may be oriented otherwise and (be rotated by 90 ° or other are oriented), and space used in this case
Thus relative descriptors can be also understood that.
This disclosure provides the embodiment of various temperature sensors, this element be configured to based on two (or two with
On) the geometric dimension difference of call wire carrys out monitoring temperature.In some embodiments, revealed temperature sensor, which can be integrated into, is
Circuit unite (for example, brilliant system on chip (system-on-chip；SoC) circuit, system (system-in-package in encapsulation；
SiP) etc.), temperature on the chip to monitor circuit system.
It more specifically, in some embodiments, all can be the interconnection line of circuit system in this two call wires each
(for example, copper interconnecting line), this circuit system are configured to two or more respective element/dresses of electrical connection system circuit
/ feature is set, and all there is respectively different transverse cross-sectional sizes in this two call wires each.In some embodiments, this two
A call wire can share same height of transverse section, but have respectively different cross sectional widths, this leads to this two call wire tools
There is respectively different temperature-coefficient of electrical resistance (temperature coefficients of resistance；TCR's).It is as follows
It will be discussed in further detail, respectively different temperature-coefficient of electrical resistances causes this two call wires to have respectively different resistance temperatures
It responds, this leads to occur two different discharge rates on this two call wires again.Temperature sensor is based on different as a result,
Discharge rate compares signal present on this two call wires (for example, voltage, electric current, etc.) level, is with decision systems circuit
Under no (for example, being higher or lower than predefined threshold temperature) in abnormal temperature.
Block diagram of Fig. 1 diagram according to the temperature sensor 100 of various embodiments.As described above, temperature sensor
100 are integrated into circuit system (not shown), and are configured to temperature on the chip of monitoring circuit system.In some embodiments
In, temperature sensor 100 includes pre-charge circuit 102, temperature response circuit 104, temperature output circuit 106, counter electricity
Road 108, comparator circuit 110 and control logic circuit 112.
The pre-charge circuit 102 for being coupled to control logic circuit 112 is configured to receive preliminary filling from control logic circuit 112
Electrical reset signal, it is as follows to be discussed in further detail according to fig. 2.In some embodiments, such precharge enabling signal can quilt
Pre-charge circuit 102 periodically receives, so that pre-charge circuit 102 is received in response at particular logic state (for example, logical zero)
It is pre-charged enabling signal, is charged with responding circuit 104 to temperature.
According to some embodiments of this disclosure, the temperature for being coupled to pre-charge circuit 102 and control logic circuit 112 is returned
Answering circuit 104 may include at least a pair of of call wire, these call wires have respectively different cross sectional widths (hereinafter referred to as " wide
Degree ").By using this two call wires with respective different in width, this two call wires can have respectively different resistance
Temperature coefficient (temperature coefficients of resistance；TCR's), so that this two call wire tools
There is respectively different resistance temperatures to respond.
In some embodiments, after two call wires are charged to common level by pre-charge circuit 102, then these are passed
Conducting wire discharges under same environment temperature (for example, temperature on chip).It is discussed in detail as discussed further below, due to different
Temperature-coefficient of electrical resistance, this two call wires can have respectively different resistance values under same environment temperature, therefore, this two biographies
Conducting wire can be discharged (also that is, this two call wires have respectively different discharge rates) with different rates, this causes, two conduction
The voltage level being individually present on line is different.
In some embodiments, it is coupled to the temperature output circuit that temperature responds circuit 104 and control logic circuit 112
106 using the difference present on two call wires between voltage level, to determine the logic state of output signal, this output letter
Number instruction, which responds the environment temperature that detects of circuit 104 by temperature, to be to have reached or is more than predefined maximum threshold temperature, also
It is to be down to predefined minimum threshold temperature or less.In some embodiments, temperature output circuit 106 can be further to control logic
Circuit 122 provides determined logic state, and control logic circuit 122 is made to determine that environment temperature is to have reached or is more than predefined
Maximum threshold temperature, be still down to predefined minimum threshold temperature or less.
As a result, after determining that the environment temperature that senses is exception (for example, be higher than predefined maximum threshold temperature or
Lower than predefined minimum threshold temperature), control logic circuit 112, which can for example stop sending to pre-charge circuit 102, to be pre-charged
Enabling signal (discharges, so that temperature responds circuit 104 and stops sense ambient temperature) from there through to respective voltage level
And/or output caution signal, the environment temperature that this signal designation is sensed are abnormal.
In some other embodiments, temperature output circuit 106 can to counter circuit 108 provide it is determined that logic shape
State.In such embodiment, counter circuit 108 is configured to each of the logical signal provided by temperature output circuit 106
A logically high (also that is, logic 1) and/or logic low (also that is, logical zero) number is counted, and is provided to comparator circuit 110
At least one of logically high and logic low number counted.Comparator circuit 110, which compares, counts to obtain number and predefined number (example
Such as, a constant), to further confirm that environment temperature is had reached, more than predefined threshold temperature, still it is down to predefined threshold
Temperature is hereinafter, to export comparison result.In some embodiments, comparator circuit 110 is mentioned then to control logic circuit 112
For comparison result.Equally, based on comparative result, control logic circuit 112 can stop sending precharge tax to pre-charge circuit 102
Can signal (discharge from there through to respective voltage level so that temperature respond circuit 104 stop sense ambient temperature) and/
Or output caution signal, the environment temperature that this signal designation is sensed are abnormal (for example, being higher than predefined maximum threshold temperature
Or lower than predefined minimum threshold temperature).
Exemplary circuit diagram of Fig. 2 diagram according to the temperature sensor 100 of various embodiments.It should be noted that being illustrated in Fig. 2
Embodiment in circuit diagram be simplified for purposes of illustration.Temperature sensor 100 may include it is one or more other
Circuit device/element, for example, resistor, capacitor, inductor, transistor, etc., above-mentioned each is in Fig. 2 and not shown
Out.
As shown in Figure 2, pre-charge circuit 102 includes three transistors 202,204 and 206.In some embodiments,
By p-type metal-oxide half field effect transistor (p-type metal-oxide- in transistor 202,204 and 206 each
semiconductor field-effect-transistor；PMOSFET) implement.However, in some other embodiment, it is brilliant
It can be by a different types of metal-oxide half field effect transistor (for example, N-shaped) or various other in body pipe 202,204 and 206 each
Any transistor is (for example, bipolarity engages transistor (bipolar junction transistor in type of transistor；
BJT), high electron mobility transistor (high-electron-mobility transistor；) or its counterpart HEMT
Etc.) implement.In some embodiments, the respective gates of transistor 202,204 and 206 can be set up together, to receive letter
Numbers 205, as described above, this signal is to be pre-charged enabling signal (being provided by control logic circuit 102).Transistor 202 and 204
It is coupled to the first supply voltage 201 (for example, Vdd) in respective source terminal, and is coupled to temperature in respective drain electrode end and responds
Circuit 104.It should also be noted that transistor 206 is coupled to each leakage of transistor 202 and 204 in its each drain electrode end and source terminal
Extremely.
It includes the first call wire 208, the second call wire 210 that temperature, which responds circuit 104, and responds transistor 212 of energizing.The
One call wire 208 is coupled to the transistor 202 of pre-charge circuit 102 at one end, and is coupled to transistor 212 in the other end；And
Second call wire 210 is coupled to the transistor 204 of pre-charge circuit 102 at one end, and is coupled to transistor 212 in the other end.
In some embodiments, transistor 212 is by N-shaped metal-oxide half field effect transistor (n-type MOSFET；NMOSFET) implement, crystal
The drain electrode end of pipe 212 is coupled to first and second call wire 208 and 210 and its source terminal is coupled to the second supply voltage 203
(for example, ground connection).In addition, transistor 212, by the 213 lock control of response enabling signal, this signal is configured to energize first and second
Call wire 208 and 210, makes it start sensing temperature, this will be in discussing in further detail below.
As described above, in some embodiments, the first call wire 208 and the second call wire 210 have respectively different width
Degree, wherein the width of the first call wire 208 is narrower than the width of the second call wire 210.For example, the width of the first call wire 208 is
About 30 nanometers (nanometers, nm) to 0.1 micron (micrometers, μm), and the width of the second call wire 210 is about 0.8
To 1 μm.Wider call wire 210 has more high temperature coefficient of resistance than relatively narrow call wire 208, thus leads to first and the
For two call wires 208 and 210 in response to same temperature amount of change and there are different voltage drop amounts, this will below further in detail
It is thin to discuss.
In some embodiments, first and second call wire 208 and 210 is the interconnection line of circuit system, temperature sensing member
The integration of part 100 is so far in circuit system.Such interconnection line (for example, first and second call wire 208 and 210) can be placed in same gold
Belong on layer, this metal layer is usually configured to the more conductive features and/or structure that electric coupling is placed in metal layer or lower section
One of.However, first and second call wire 208 and 210 can be placed in respectively different gold in some alternate embodiments
Belong on layer, while still within this disclosure scope.
In addition, can respectively include " existing " interconnection line for circuit system in first and second call wire 208 and 210, such as
It is upper described, temperature sensor 100 is contained in this interconnection line.For example, when circuit system be memory circuit (for example, it is static with
Machine village access/memory body circuit) when, the temperature sensor 100 being integrated into such memory circuit can be by memory circuit
Existing bit line (bit line；BL) and/or conjugation bit line (bit bar line；BBL) it is used as first and second call wire
208 and 210.Although not shown in Fig. 2 as a result, first and second call wire 208 and 210 may be coupled to one or more notes
Body bitcell array is recalled, for example, the memory body bitcell array of six transistors configuration.
Temperature output circuit 106 includes transistor 214,216,218,220 and 224 and phase inverter 226 and 228.Crystal
It can be implemented by p-type metal-oxide half field effect transistor in pipe 214 and 218 each；And in transistor 216,220 and 224 each
It can be implemented by N-shaped metal-oxide half field effect transistor.Equally, can pass through in transistor 214,216,218,220 and 224 each
Any transistor in different types of metal-oxide half field effect transistor or various other type of transistor is (for example, bipolarity engages
Transistor, high electron mobility transistor or its counterpart etc.) implement.In some embodiments, temperature output circuit
106 may include the sensing amplifier formed by transistor 214,216,218 and 220, this sensing amplifier can for differential pressure mode or
The sensing amplifier of spill current mode.
In Fig. 2, temperature output circuit 106 includes the differential pressure mode sense formed by transistor 214,216,218 and 220
Amplifier, transistor 214 and 216 is formed as the first phase inverter and transistor 218 and 220 is formed as the second phase inverter, wherein
The coupling intersected with each other between the first supply voltage 201 and transistor 224 of first and second phase inverter.Transistor 224 is coupled in
First and second phase inverter (being formed respectively by transistor 214 and 216 and transistor 218 and 220) of cross-coupled is supplied with second
Between piezoelectric voltage 203.Phase inverter 226 couples at the first phase inverter node " X " (each drain electrode end of transistor 214 and 216)
To the first call wire 208, and it is further coupled to each gate terminal of transistor 218 and 220；And second phase inverter 228 in
It is coupled to the second call wire 210 at two phase inverter nodes " Y " (each drain electrode end of transistor 218 and 220), and is further coupled
To each gate terminal of transistor 214 and 216.
In some embodiments, transistor 224 is configured to temperature of energizing by the 225 lock control of sensing enabling signal, this signal
Output circuit 106 makes it sense and amplify the voltage difference between the first call wire 108 and the second call wire 210.According to this announcement
Some embodiments of case, when voltage difference arrives greatly (for example, being greater than predefined threshold value) be enough to indicate abnormal temperature there are when, temperature
Degree output circuit 106 can amplify voltage difference, and make the counterlogic of the difference output signal 227 and 229 of phase inverter 226 and 228
State, this will be discussed in further detail with reference to Fig. 4 below.
As noted previously, as the first call wire 208 and the respective different width of the second call wire 210, therefore it has respectively
From different temperature-coefficient of electrical resistances.In some embodiments, the temperature-coefficient of electrical resistance of call wire can be expressed as,
Wherein " T " be referred to as call wire be subjected to (for example, sensing) current environmental temperature (for example,
Temperature on chip), " R " is referred to as the call wire resistance value under current environmental temperature T, " Tref" be referred to as with reference to temperature
It spends (for example, predefined maximum/minimum threshold temperature), " Rref" it is referred to as reference temperature TrefUnder call wire resistance value.
With continued reference to the illustrated embodiment of Fig. 2, wherein 210 to the first call wire 208 " width " of the second call wire, the first conduction
Temperature-coefficient of electrical resistance (hereinafter referred to " the TCR of line 2081") less than the second call wire 210 temperature-coefficient of electrical resistance (hereinafter referred to as
For " TCR2"), as having known to general technology person in the art.In general, TCR2Lower first call wire 208 is returning
Show small resistance value change when Ying Yuyi temperature amount of change；And TCR2Higher second call wire 210 is in response to same temperature
Show larger resistance value change when spending amount of change.
In addition, being based on temperature-coefficient of electrical resistance equation provided above
It is lower than reference temperature T in the current environmental temperature T that first and second call wire 208 and 210 is sensedref(also
That is, T < Tref) when, the resistance value (hereinafter referred to as " R of the first call wire 2081") it is higher than the resistance value of the second call wire 208 (hereafter
Referred to as " R2"), and R1And R2All it is lower than Rref(also that is, R2<R1<Rref).On the other hand, in first and second call wire 208 and 210
The current environmental temperature T sensed is higher than reference temperature Tref(also that is, T > Tref) when, it is based on resistance temperature system provided above
Number equation, R1Get lower than R2, and R1And R2All it is higher than Rref(also that is, R2>R1>Rref)。
Relationship between first and second call wire 208 and 210 resistance value and environment temperature is in the drawing 300 of Fig. 3
Diagram.The X-axis of drawing 300 indicates that the Y-axis of temperature variable (for example, environment temperature T) and drawing 300 indicates resistance value variable (example
Such as, R1And R2).As shown, being expressed as the function of temperature in the resistance value of first and second call wire 208 and 210 each.
Particularly, work as T1<TrefWhen, R1Higher than R2, and RrefHigher than R1；And work as T2>TrefWhen, R2Higher than R1, and R1Higher than Rref。
Using such relationship between resistance value and temperature, first and second call wire is can be used in temperature sensor 100
The environment temperature that 208 and 210 monitorings are rising and/or declining, and further determine whether ascending temperature has been more than predetermined
Whether adopted threshold temperature and/or decline temperature are down to predefined threshold temperature hereinafter, will be in being discussed herein below.
Fig. 4 respectively illustrate according to various embodiments precharge enabling signal 205, respond enabling signal 213, first and
Voltage level present on second call wire 208 and 210 (hereinafter referred to as " signal 209 " and " signal 229 "), sensing are energized
The example of the respective output signal (hereinafter referred to as " signal 227 " and " signal 211 ") of signal 225, phase inverter 226 and 228
Property waveform.Signal 205,209,211,213,225,227 and 229 logically high (hereinafter referred to as " logic 1 ") and logic low (under
Text is known as changing over time (along the X-axis of Fig. 4) and changing (along the Y-axis of Fig. 4) between " logical zero ".For example, in signal 209 and 211
Each is changed from Vdd (for example, logic 1) to ground connection (for example, logical zero) at any time with one respective " discharge rate ", this will be
It is discussed in further detail below.
For operation temperature sensing element 100 (Fig. 1), control logic circuit 112 periodically (for example, every 10 milliseconds) to
Pre-charge circuit 102 provides precharge enabling signal 205.More specifically, precharge enabling signal 205 includes multiple in logic
The pulse changed at any time between 0 and logic 1 wherein can all indicate a temperature sensing event in this multiple pulse each
Iteration.In the illustrated embodiment of Fig. 4, a pulse, that is, an iteration of temperature sensing event are illustrated.In addition, this preliminary filling
The pulse of electrical reset signal 205 is in time " t0" at from logic 1 be converted to logical zero, this makes the transistor of pre-charge circuit 102
202,204 and 206 open, thus by using the first supply voltage 201 (Vdd) to first and second call wire 208 and 210 into
Line precharge.In some embodiments, first and second call wire 208 and 210 precharged to Vdd, this corresponds to the time
“t1" at logic 1, as shown in the waveform of signal 209 and 211.In some embodiments, precharge enabling signal 205 can be
Time t1Place changes back to logic 1 later, it is made to stop the precharge to first and second call wire 208 and 210.
In subsequent time " t2" at, enabling signal 213 is responded from logical zero and is converted to logic 1, this makes first and second
Call wire 208 and 210 is coupled to supply voltage, such as is grounded.In some embodiments, control logic circuit 112 can be according to pre-
Charge enabling signal 205, and response enabling signal 213 is periodically made to change over time and turn between logical zero and logic 1
Become.In other words, when control logic circuit 112 makes precharge enabling signal 205 change back to logic 1 from logical zero, control is patrolled
Collecting circuit 112 makes response enabling signal 213 be converted to logic 1 from logical zero.
When response enabling signal 213 is converted to logic 1 from logical zero, along the formation of first and second call wire 208 and 210
Respective discharge path.More specifically, signal 209 (voltage level present on the first call wire 208) and signal 211 (
Voltage level present on two call wires 210) start with due to its respectively different resistance value and each self-discharge rate for generating,
Change from logic 1 to logical zero.In some embodiments, first and second call wire 208 and 210 has respectively different resistance
Value, because these call wires have a respectively different temperature-coefficient of electrical resistance, and this is due to its respective different width.
The voltage difference between signal 209 and 211 may be present at any time and increase as a result,.Once voltage difference is for example in the time
“t3" at be large enough to be more than predefined voltage Δ V, then sense enabling signal 225 from logical zero and be converted to logic 1, to start
The sensing amplifier of temperature output circuit 106, this amplifier are made of transistor 214,216,218 and 220.In some implementations
In example, time t3Timing can the various design factors based on temperature sensor 100 and predetermine.
In some embodiments, sensing amplifier receives signal 209 and 211 and is used as input signal.More specifically, signal
209 are received by the second phase inverter (transistor 218 and 220), are also received in nodes X；And signal 211 is (brilliant by the first phase inverter
Body pipe 214 and 216) reception, are also received in node Y.Electricity sufficiently large between signal 209 and 211 can be used in sensing amplifier
Pressure difference (that is, voltage difference between nodes X and Y) determines the respective logic state of signal 209 and 211, each other in mutual in logic
It mends.
For example, when signal 209 reaches sufficiently large voltage difference lower than the degree of signal 211, the crystal of the first phase inverter
The 220 self-saturation mode of transistor of pipe 216 and the second phase inverter is converted to cut-off mode and three polar body modes respectively, this to save
Point X and Y is latched in respectively at logical zero and logic 1, and on the other hand, when the degree that signal 209 is higher than signal 211 reaches foot
When reaching big voltage difference, transistor 216 and 220 self-saturation modes are converted to three polar body modes and cut-off mode respectively, this makes
Nodes X and Y are latched in respectively at logic 1 and logical zero.In some embodiments, temperature output circuit 106 be based on signal 209 with
The logic state (that is, logic state of nodes X and Y) of 211 decision distinguishes output signal 227 and 229.Particularly, believe
Number 227 logic states and signal 229 through logical inversion to signal 209 are through logical inversion to the logic state of signal 211.
As described above, the waveform illustrated in Fig. 4 indicates to be executed by temperature sensor 100 for monitoring current environmental temperature
Temperature sensing event single iteration.In some embodiments, since control logic circuit 112 periodically assigns precharge
Energy signal 205 and response enabling signal 213 change at any time and with a corresponding manner between logical zero and logic 1, therefore temperature sense
Survey element 100 can change over time and execute multiple such temperature sensing event iteration, with monitoring may change over time and on
The environment temperature for rising or declining.
In one example of the environment temperature in the monitoring of temperature sensor 100 one rises, referring again to Fig. 3, with reference to temperature
Spend TrefCan be chosen as predefined threshold temperature and temperature sensor 100 can be placed under environment temperature T, and environment temperature T is most
Just it is lower than predefined threshold temperature Tref, it is contemplated that will rise.In some embodiments, first and second call wire 208 and 210
Through pre-calibration same resistance value, that is, predefined threshold temperature T is presentedrefUnder Rref.Various modes can be used so that
One and second call wire 208 and 210 in predefined threshold temperature TrefThere is down same resistance value Rref, such as make first and second
Call wire 208 and 210 long enoughs, are for example, at least about several millimeters.
As a result, when environment temperature T is (for example, the T in Fig. 31) it is lower than predefined threshold temperature TrefWhen, due to R2(second passes
The resistance value that conducting wire 210 indicates) it is lower than R1(resistance value that the first call wire 208 indicates), therefore the first call wire 208 may be present
Higher than the discharge rate of the second call wire 210.After the temperature sensor 100 discussed for Fig. 4 operates, when first and the
The energized electric discharge of two call wire 208 and 210 is (for example, in the time t of primary iteration2Place) when, first and second call wire 208 and
Voltage level represented by 210 (that is, signal 209 and 211) can be dissipated so that the voltage increased between signal 209 and 211 is presented
Difference.In instant example, since the electric discharge of the first call wire 208 is faster than the second call wire 210, signal 209 can be lower than signal 211
(also that is, 211 subtraction signal 209 of signal is positive).
When the voltage difference between signal 209 and signal 211 persistently increases, temperature output circuit 106 can be used sufficiently large
Voltage difference (for example, in the time t of primary iteration3Place) with the logic state for determining signal 209 and 211 be respectively logical zero and
1, for example, then using signal 227 (logical inversion to signal 209) and 229 (logical inversions to signal 211) as logic 1
And 0 output.In some embodiments, control logic circuit 112 can receive and storage assembly 227 and 229 respective logic states,
Or one of logic state (because it is logical complement).In some embodiments, control logic circuit 112 can be performed one or more
Secondary iteration, and thus the counterlogic state of signal 227 and 229 can be received and be stored by control logic circuit 112.
When environment temperature T is (for example, the T in Fig. 32) increase to higher than predefined threshold temperature TrefWhen, R2Become to be above R1,
This makes the second call wire 210 there is the discharge rate for being higher than the first call wire 208.Again in temperature sensor discussed above
100 operation after, when first and second call wire 208 and 210 it is energized electric discharge (for example, in the time t of successive iterations2Place),
Voltage level (that is, signal 209 and 211) can be dissipated so that the voltage difference increased between signal 209 and 211 is presented.Due to the second biography
The electric discharge of conducting wire 210 becomes faster than the first call wire 208, and signal 209 can be higher than signal 211 (also that is, 211 subtraction signal 209 of signal
It is negative).
Equally, when the voltage difference between signal 209 and 211 persistently increases, signal is can be used in temperature output circuit 106
Sufficiently large voltage difference is (for example, in the time t of successive iterations between 209 and 2113Place) using by signal 227 and 229 as
Such as logical zero and logic 1 export.It should be noted that the logic state of signal 227 and 229 is reversion.This is because of when environment temperature
Spending T is more than predefined threshold temperature TrefWhen, as described above, the electric discharge of the second call wire 210 becomes faster than the first call wire 208,
So that temperature output circuit 106 determines that the respective logic state of signal 209 and 211 is logic 1 and logical zero.
As described above, the respective logic state of at least one of 112 storage assembly 227 and 229 of control logic circuit with
For iteration, these logic states to be logical zero and logic 1 in instant example each time in previous ones.Therefore, in some realities
It applies in example, the presence of the logic state based on the signal 227 detected and 229 such reversion (for example, be inverted to logic respectively
1 and logical zero), thus control logic circuit 112 can determine that environment temperature T has been more than predefined threshold temperature Tref。
In another example of the environment temperature in the monitoring decline of temperature sensor 100, temperature sensor 100 can quilt
It is placed under environment temperature T, this environment temperature T is initially higher than predefined threshold temperature Tref, it is contemplated that will decline.In aforesaid operations
Later, the presence that control logic circuit 112 can be inverted based on the logic state of the signal 227 detected and 229, to determine environment
Whether temperature T is reduced to predefined threshold temperature TrefBelow.
Another exemplary circuit diagram of Fig. 5 diagram according to the part of the temperature sensor 100 of various embodiments.As schemed
Show, the first call wire 208 and/or the second call wire 210 may include respective illusory call wire 208' and 210'.Such illusory biography
Conducting wire 208' and 210' can be used to balance the respective capacitance of first and second call wire 208 and 210.In some embodiments,
Illusory call wire 208' may be coupled to one end of the first call wire 208, and the other end floats；And illusory call wire 210' may be coupled to
One end of second call wire 210, the other end float.As a result, when the capacitance for balancing first and second call wire 208 and 210
Meanwhile first and second call wire 208 and 210 respective resistance value R1And R2It can remain unchanged.
In addition, in some embodiments, in illusory call wire 208' and 210' each can for each call wire 208 and
210 provide one or more additional " tap " positions, to change resistance value R1And R2(if necessary).For example, illusory call wire
210' provides additional tap joint position 503 and 505.Therefore, as resistance value R2When will increase, 210 coupling of the second call wire is changed
It is connected to the tap joint position of pre-charge circuit 102.In one example, the second call wire 210 can be at original tap joint position 501
It is coupled to pre-charge circuit 102.As resistance value R2When increase, tap joint position can change to 503 or 505 from 501.
Process of Fig. 6 diagram according to various embodiments to an illustrative methods 600 of operation temperature sensing element 100
Figure.In various embodiments, the operation of method 600 is executed by the corresponding assembly that Fig. 1 is illustrated into Fig. 5.In order to discuss, method
600 following embodiment will be described in conjunction with Fig. 1 to Fig. 5.The illustrated embodiment of method 600 is only example.Therefore, Ying Li
It solves, any operation can be omitted, be re-sequenced in a variety of operations, and/or addition, while still within this disclosure scope.
Method 600 is since operation 602, wherein providing according to various embodiments has respectively different cross sectional widths
First call wire and the second call wire.Using the examples detailed above of FIG. 1 to FIG. 5, the first call wire 208 has relatively narrow width and the
Two call wires 210 have more wide degree, this makes the first call wire 208 have less resistive temperature coefficient and the second call wire
210 have larger temperature-coefficient of electrical resistance.As described above, first and second call wire 208 and 210 is in reference temperature TrefUnder have
Same resistance value, this temperature are used as predefined threshold temperature.
According to various embodiments, method 600 continues to operating procedure 604, and wherein first and second call wire is all
Phase property is precharged to common voltage level.In same instance, temperature respond circuit 104 first and second call wire 208 and
210 are periodically precharged to common voltage level, such as Vdd (logic 1) by pre-charge circuit 102.
According to various embodiments, method 600 continues to operating procedure 606, wherein putting in first and second call wire
When electric, the voltage difference present on first and second call wire between voltage level is by periodical monitoring.With continued reference to same reality
Example, after first and second call wire 208 and 210 is precharged to logic 1, first and second call wire 208 and 210 it is energized with
Electric discharge.
As noted previously, as the first call wire 208 is with less resistive temperature coefficient and the second call wire 210 is with larger
Temperature-coefficient of electrical resistance, when environment temperature is lower than predefined threshold temperature TrefWhen, the first call wire 208, which exists, is higher than the second conduction
The resistance value of line 210；And when environment temperature is higher than predefined threshold temperature TrefWhen, the first call wire 208 exists to be passed lower than second
The resistance value of conducting wire 210.
As a result, when environment temperature is lower than predefined threshold temperature TrefWhen, the first call wire 208 is than the second call wire 210
Quickly discharge；And when environment temperature is higher than predefined threshold temperature TrefWhen, the second call wire 210 is than the first call wire 208
Quickly discharge.First and second call wire 208 and 210 different discharge rates cause to present on first and second call wire
Voltage difference between voltage level increases with the time, this allow temperature output circuit 106 determine its output signal 227 and
229 respective logic state.
According to various embodiments, method 600 continues to operating procedure 608, is determined wherein detecting by voltage difference
The logic state of reversion, to decide whether that there are abnormal temperatures.Same instance is still used, temperature output circuit 106 can be to control
Logic circuit periodically provides the logic state through determining of signal 227 and 229.As described above, when environment temperature is lower than predetermined
Adopted threshold temperature TrefWhen, signal 227 and 229 can be decided to be logic 1 and 0 respectively；And when environment temperature become larger than it is predefined
Threshold temperature TrefWhen, signal 227 and 229 can be decided to be logical zero and 1 respectively.In other words, signal 227 and 229 has been inverted
Logic state.According to some embodiments, control logic circuit 112 can the logic state based on signal 227 and 229 there are such anti-
Turn, and determines environment temperature and be greater than predefined threshold temperature Tref。
Fig. 7 illustrates the circuit diagram of another temperature sensor 700.According to some embodiments, temperature sensor 700 also makes
It is generated not with having respective different temperature-coefficient of electrical resistance present in respectively two call wires of different cross sectional width
Same signal, but in the illustrated embodiment of Fig. 7, temperature sensor 700 is by such different temperature-coefficient of electrical resistance to produce
Raw two signals with different frequency, to decide whether that there are abnormal temperatures.
In some embodiments, temperature sensor 700 includes first annular oscillating circuit 702, the second ring oscillation electricity
Road 704, the first call wire 706 for being coupled to first annular oscillating circuit 702, be coupled to the second annular oscillation circuit 704
Two call wires 708, one or more first buffers 710, one or more second buffers 712 and counter 714.
As described above, in some embodiments, the first call wire 706 and the second call wire 708 have respectively different width
Degree, wherein the width of the first call wire 706 is narrower than the width of the second call wire 708.For example, the width of the first call wire 706 is
About 30nm to 0.1 μm, and the width of the second call wire 708 is about 0.8 to 1 μm.Wider call wire 708 is than relatively narrow conduction
Line 706 has more high temperature coefficient of resistance, first and second call wire 706 and 708 is thus caused to change in response to same temperature
It measures and there are different voltage drop amounts, this will be discussed in further detail below.
In some embodiments, the first call wire 706 and the second call wire 708 are calibrated same to have at a given temperature
One resistance.At this point, first annular oscillating circuit 702 and the second annular oscillation circuit 704 should have same frequency of oscillation.With temperature
The resistance change of degree change, the first call wire 706 may differ from the resistance change of the second call wire 708.Since resistance is different, the
One annular oscillation circuit 702 and the second annular oscillation circuit 704 can respective different oscillation frequency, this can be by counter
714 distinguish, to read temperature based on the pre-calibration relationship between temperature and resistance.
In one embodiment, the temperature sensor for being configured to monitoring temperature includes: the first call wire；Second conduction
Line, wherein first and second call wire has respectively different transverse cross-sectional sizes；Sensing circuit is coupled to first and second conduction
Line, and be configured to determine patrolling for output signal based on the difference between the signal level being individually present on first and second call wire
The state of collecting；And control circuit, it is coupled to sensing circuit, and be configured to the logic state based on decision, to determine monitoring temperature
It is above or below predefined threshold temperature.
In some embodiments, first and second call wire has respectively different cross sectional width so that first and
Second call wire has respectively different resistance values at the same temperature.
It in some embodiments, include via respective in signal level each present on first and second call wire
The discharge voltage level of discharge rate.
In some embodiments, control logic circuit be configured to be based further on it is determined that the reversion of logic state patrol
The state of collecting, to determine that the temperature of monitoring is above or below predefined threshold temperature.
It in some embodiments, include the bit line or conjugation of memory cell in first and second call wire each
Bit line.
In some embodiments, when the temperature of monitoring is equal to predefined threshold temperature, first and second call wire has
Same resistance value.
In some embodiments, sensing circuit is further configured is higher than with the temperature that decision logic state is instruction monitoring
First value of predefined threshold temperature.
In some embodiments, sensing circuit is further configured is lower than with the temperature that decision logic state is instruction monitoring
The second value of predefined threshold temperature, wherein second value and the first value reverse phase.
In some embodiments, the temperature sensor for being configured to monitoring temperature further includes counter circuit, coupling
To sensing circuit, and it is configured to count each number of first and second value.
In some embodiments, the temperature sensor for being configured to monitoring temperature further includes comparator circuit, coupling
It to counter circuit, and is configured to compare the number and predefined number of the first value, to allow control logic circuit into one
Step determines whether the temperature monitored is higher than predefined threshold temperature, and compares the number and predefined number of second value, so as to
Control logic circuit is allowed further to determine whether the temperature monitored is lower than predefined threshold temperature.
In another embodiment, the temperature sensor for being configured to monitoring temperature includes: the first call wire；Second conduction
Line, wherein first and second call wire has respectively different transverse cross-sectional sizes；Sensing circuit is coupled to first and second conduction
Line, and be configured to based on the voltage being individually present in electric discharge, on first and second call wire when first and second call wire
Difference between level, to determine the logic state of output signal；And control circuit, it is coupled to sensing circuit, and be configured to base
In the logic state of decision, to determine that monitoring temperature is above or below predefined threshold temperature.
In some embodiments, control logic circuit be configured to be based further on it is determined that the reversion of logic state patrol
The state of collecting, to determine that the temperature of monitoring is above or below predefined threshold temperature.
In some embodiments, first and second call wire has respectively different cross sectional width so that first and
Second call wire has respectively different resistance values at the same temperature.
It in some embodiments, include the bit line or conjugation of memory cell in first and second call wire each
Bit line.
In some embodiments, when the temperature of monitoring is equal to predefined threshold temperature, first and second call wire has
Same resistance value.
In some embodiments, sensing circuit is further configured is higher than with the temperature that decision logic state is instruction monitoring
First value of predefined threshold temperature.
In some embodiments, sensing circuit is further configured is lower than with the temperature that decision logic state is instruction monitoring
The second value of predefined threshold temperature, wherein second value and the first value reverse phase.
In some embodiments, the temperature sensor for being configured to monitoring temperature further includes counter circuit, coupling
To sensing circuit, and it is configured to count each number of first and second value.
In some embodiments, the temperature sensor for being configured to monitoring temperature further includes comparator circuit, coupling
It to counter circuit, and is configured to compare the first value number and predefined number, to allow control logic circuit into one
Step determines whether the temperature monitored is higher than predefined threshold temperature, and compares the number and predefined number of second value, so as to
Control logic circuit is allowed further to determine whether the temperature monitored is lower than predefined threshold temperature.
In another embodiment, a kind of temperature sensing method includes: to provide the first call wire and the second call wire, wherein the
One and second call wire there is respectively different cross sectional width；First and second call wire is charged into common voltage level；
It discharges under an environment temperature first and second call wire；Based on electric discharge each present on first and second call wire
The voltage difference of voltage level determines current logic state；And it is based on whether present logic state inverts from previous logic state
It obtains, to determine that environment temperature is above or below predefined threshold temperature.
Foregoing teachings introduce the feature of several embodiments, so that the half operator in this field is appreciated that this disclosure
Aspect.They skilled person should be understood that this disclosure can be used as the basis for designing or modifying other processing procedures and structure by it,
To realize purpose identical with the embodiment of this case introduction and/or obtain identical advantage.They skilled person should also recognize
Know, such same constitute does not depart from the spirit and scope of this disclosure, and these compositions can make various changes in the present case,
Replacement, and change, without departing from the spirit and scope of this disclosure.
Claims (1)
1. a kind of temperature sensor is configured to one temperature of monitoring characterized by comprising
One first call wire；
One second call wire, wherein first call wire and second call wire have respectively different transverse cross-sectional sizes；
One sensing circuit is coupled to first call wire and second call wire, and be configured to based on first call wire and
A difference present on second call wire between respective signal level, to determine a logic state of an output signal；And
One control circuit is coupled to the sensing circuit, and is configured to the logic state based on decision, to determine being somebody's turn to do for monitoring
Temperature is above or below a predefined threshold temperature.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762564652P | 2017-09-28 | 2017-09-28 | |
| US62/564,652 | 2017-09-28 | ||
| US16/142,934 US11073428B2 (en) | 2017-09-28 | 2018-09-26 | Conductive line-based temperature-sensing device |
| US16/142,934 | 2018-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109580023A true CN109580023A (en) | 2019-04-05 |
Family
ID=65919947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811135372.XA Pending CN109580023A (en) | 2017-09-28 | 2018-09-28 | Using call wire as the temperature sensor of substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109580023A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112414578A (en) * | 2019-08-23 | 2021-02-26 | 台湾积体电路制造股份有限公司 | Temperature sensor, integrated circuit and method for determining operation of integrated circuit |
-
2018
- 2018-09-28 CN CN201811135372.XA patent/CN109580023A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112414578A (en) * | 2019-08-23 | 2021-02-26 | 台湾积体电路制造股份有限公司 | Temperature sensor, integrated circuit and method for determining operation of integrated circuit |
| CN112414578B (en) * | 2019-08-23 | 2024-02-23 | 台湾积体电路制造股份有限公司 | Temperature sensor, integrated circuit and method for determining operation of integrated circuit |
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Application publication date: 20190405 |