CN109579683A - The method and device of thickness for the micro- beam of in situ measurement MEMS - Google Patents
The method and device of thickness for the micro- beam of in situ measurement MEMS Download PDFInfo
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- CN109579683A CN109579683A CN201811306759.7A CN201811306759A CN109579683A CN 109579683 A CN109579683 A CN 109579683A CN 201811306759 A CN201811306759 A CN 201811306759A CN 109579683 A CN109579683 A CN 109579683A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H9/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means
Abstract
The present invention relates to the methods of the thickness for the micro- beam of in situ measurement MEMS.A kind of method of thickness for the micro- beam of in situ measurement MEMS is provided, this method comprises: obtaining the structural parameters of the micro- beam of MEMS；Obtain pick-up voltage, the eigenfrequncies and vibration models function of the micro- beam of MEMS；According to the structural parameters of the micro- beam of MEMS, pick-up voltage, eigenfrequncies and vibration models function, the thickness of the micro- beam of MEMS is determined.The structural parameters of the micro- beam of MEMS include length, width and the height of the micro- beam of MEMS, are highly the upper surface of the micro- beam of MEMS and the distance between the upper surface of bottom electrode below the micro- beam of MEMS.The method of the above-mentioned thickness for the micro- beam of in situ measurement MEMS, due to according to the structural parameters of the micro- beam of MEMS, pick-up voltage, eigenfrequncies and vibration models function, determine the thickness of the micro- beam of the MEMS, therefore it can be realized the lossless on-line measurement of high-precision of micro- cantilever thickness, this is most important to the performance for rapidly and accurately evaluating MEMS device.
Description
Technical field
The present invention relates to the fields MEMS (MEMS, Micro-Electro-Mechanical System), more specifically
Ground is related to the method and device of the thickness for the micro- beam of in situ measurement MEMS.
Background technique
In the field MEMS (MEMS, Micro-Electro-Mechanical System), micro- beam is in MEMS
The most common movable microstructure has irreplaceable position as the element of electric-mechanic control system in MEMS.Micro girder construction parameter
Measurement be guarantee processing quality, research device performance, optimizing structure design basis.
Currently, can be surveyed to micro- beam between several millimeters by common optical readings microscope to thickness in some tens of pm
Amount, and micro- beam for thickness between several microns to more than ten microns, there are three ways to determining or control thickness: first is that with splashing
Penetrate or electroplating time control, such as using LIGA technique make micro- beam when, sputter or be electroplated rate known under the premise of, pass through
The control time determines cantilever thickness, since there are many factor for influencing sputtering or rate of deposition, very not with the determining thickness of this method
Accurately.Second is that being measured at a certain angle with scanning electron microscope (SEM) or Powerful Light Microscope, the thickness of beam is obtained by angular transformation
Degree.It is influenced by processing technology, micro- cantilever thickness is often uneven, and the phenomenon that edge thickness is small and interior thickness is big, measurement essence is presented
It spends also poor.Third is that aobvious with scanning electron microscope (SEM) or Powerful Light Microscope or white light interferometer or laser co-focusing after destroying
Micro mirror directly measures, and this method measurement accuracy is higher, but belongs to destructive testing.
Summary of the invention
Based on this, it is necessary to for the micro- cantilever thickness measurement method of existing MEMS measurement result inaccuracy or to MEMS tie
Structure has destructive problem, provides a kind of method of thickness for the micro- beam of in situ measurement MEMS, can be to the micro- beam of MEMS
Thickness carries out accurately lossless in situ measurement.
According to an aspect of the invention, there is provided a kind of method of the thickness for the micro- beam of in situ measurement MEMS, the party
Method includes: the structural parameters for obtaining the micro- beam of MEMS, and structural parameters include length, width and the height of the micro- beam of MEMS, are highly
The upper surface of the micro- beam of MEMS and the distance between the upper surface of bottom electrode being located at below the micro- beam of MEMS；Obtain the micro- beam of MEMS
Pick-up voltage, eigenfrequncies and vibration models function；According to the structural parameters of the micro- beam of MEMS, pick-up voltage, eigenfrequncies and vibration models letter
Number, determines the thickness of the micro- beam of MEMS.
In one of the embodiments, according to the structural parameters of the micro- beam of MEMS, pick-up voltage, eigenfrequncies and vibration models letter
Number, determines the thickness of the micro- beam of MEMS, comprising: according to the width of the micro- beam of MEMS and height, pick-up voltage, eigenfrequncies and vibration models letter
Number, determines the clearance distance between the lower surface of the micro- beam of MEMS and the upper surface of bottom electrode；And according to clearance distance and
The micro- depth of beam of MEMS, determines the thickness of the micro- beam of MEMS.
In one of the embodiments, according to the width of the micro- beam of MEMS and height, pick-up voltage, eigenfrequncies and vibration models letter
Number, determines the clearance distance between the lower surface of the micro- beam of MEMS and the upper surface of bottom electrode, comprising: joint following formula determines
Clearance distance g,
Wherein,
η is position parameter, and b is the width of micro- beam, and g is clearance distance, z0For height, VpFor pick-up voltage, ε0For permittivity of vacuum,
εrThe relative dielectric constant of medium between the micro- beam of MEMS and bottom electrode, ρ are the density of the micro- beam material of MEMS, f0It is intrinsic
Frequency,For model function of vibration.
In one of the embodiments, according to clearance distance and the micro- depth of beam of MEMS, the thickness of the micro- beam of MEMS is determined, wrap
It includes and determines thickness according to the following formula,
H+g=z0,
Wherein, h is thickness, and g is clearance distance, z0For height.
The structural parameters of the micro- beam of MEMS are obtained in one of the embodiments, comprising: total using white light interferometer or laser
Length, width and the height of the focusing microscope measurement micro- beam of MEMS.
The micro- beam of MEMS is micro-cantilever in one of the embodiments, obtains the pick-up voltage of the micro- beam of MEMS, comprising: adopt
Electricity consumption piezo-resistive method measures pick-up voltage.It is micro- to obtain MEMS for the micro- Liang Weiwei clamped beam of MEMS in one of the embodiments,
The pick-up voltage of beam, comprising: pick-up voltage is measured using voltage-capacitance method.
The intrinsic frequency of micro- beam is obtained in one of the embodiments, comprising: signal generator is connected to Wei Liang and bottom
Portion electrode both ends, and apply sine sweep signal, micro- vibration of beam is measured using micro laser vialog and is responded, to obtain micro- beam
Intrinsic frequency.
According to another aspect of the present invention, a kind of device of thickness for the micro- beam of in situ measurement MEMS is provided, it should
Device includes: that structural parameters obtain module, and for obtaining the structural parameters of the micro- beam of MEMS, structural parameters include the length of the micro- beam of MEMS
Degree, width and height, highly between the upper surface of the micro- beam of MEMS and the upper surface of the bottom electrode below the micro- beam of MEMS
Distance；Dynamic characteristics and electrical characteristic parameter obtain module, for obtaining pick-up voltage, the eigenfrequncies and vibration models of the micro- beam of MEMS
Function；Thickness determining module, for determining according to the structural parameters of the micro- beam of MEMS, pick-up voltage, eigenfrequncies and vibration models function
The thickness of the micro- beam of MEMS.
Thickness determining module is specifically used in one of the embodiments: according to the width of the micro- beam of MEMS and height, being attracted
Voltage, eigenfrequncies and vibration models function determine the clearance distance between the lower surface of the micro- beam of MEMS and the upper surface of bottom electrode；
And according to clearance distance and the micro- depth of beam of MEMS, determine the thickness of the micro- beam of MEMS.
In one of the embodiments, according to the width of the micro- beam of MEMS and height, pick-up voltage, eigenfrequncies and vibration models letter
Number, determines the clearance distance between the lower surface of the micro- beam of MEMS and the upper surface of bottom electrode, comprising: joint following formula determines
Clearance distance g,
Wherein,
η is position parameter, and b is the width of micro- beam, and g is clearance distance, z0For height, VpFor pick-up voltage, ε0For permittivity of vacuum,
εrThe relative dielectric constant of medium between the micro- beam of MEMS and bottom electrode, ρ are the density of the micro- beam material of MEMS, f0It is intrinsic
Frequency,For model function of vibration.
The method of the above-mentioned thickness for the micro- beam of in situ measurement MEMS, due to the structural parameters according to the micro- beam of MEMS, actuation
Voltage, eigenfrequncies and vibration models function, determine the thickness of the micro- beam of the MEMS, therefore can be realized the high-precision nothing of micro- cantilever thickness
On-line measurement is damaged, this is most important for the performance for rapidly and accurately evaluating MEMS device.
Detailed description of the invention
The preferred rather than embodiment of limitation of the invention will be described with reference to attached drawing by way of example, in which:
Fig. 1 shows the flow chart in one embodiment of the application for the method for the thickness of the micro- beam of in situ measurement MEMS.
Fig. 2 shows the schematic diagrames of the micro- beam of MEMS and its dependency structure in one embodiment of the application.
Fig. 3 shows the flow chart in the another embodiment of the application for the method for the thickness of the micro- beam of in situ measurement MEMS.
Fig. 4 shows the schematic diagram in one embodiment of the application for the device of the thickness of the micro- beam of in situ measurement MEMS.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.Many details are explained in the following description in order to fully understand this hair
It is bright.But the invention can be embodied in many other ways as described herein, those skilled in the art can be not
Similar improvement is done in the case where violating intension of the present invention, therefore the present invention is not limited to the specific embodiments disclosed below.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Each technical characteristic of above embodiments can carry out arbitrary group
It closes, for simplicity of description, combination not all possible to each technical characteristic in above-described embodiment is all described, however,
As long as there is no contradiction in the combination of these technical features, all should be considered as described in this specification.
The present invention is to be established the pick-up voltage based on micro- beam based on Hamiton's principle and Euler-Bernoulli Jacob's beam model and consolidated
There is micro- cantilever thickness computation model of frequency.It can be according to micro girder construction parameter, pick-up voltage, eigenfrequncies and vibration models function, really
The thickness of fixed micro- beam.
This application provides a kind of methods of thickness for the micro- beam of in situ measurement MEMS, as shown in Figure 1, this method packet
It includes:
Step S100 obtains the structural parameters of the micro- beam of MEMS.
Specifically, the structural parameters of the micro- beam of MEMS include length, width and the height of the micro- beam of MEMS, are highly the micro- beam of MEMS
Upper surface and the distance between the upper surface of bottom electrode that is located at below the micro- beam of MEMS.Illustratively, as shown in Fig. 2,
The micro- beam of MEMS is micro-cantilever 110, but the application is not limited to micro-cantilever, and the present processes also can be applied to clamped beam etc.
Other micro- beams.As shown in Fig. 2, needing to obtain the length L of the micro- beam of MEMS, width b and height z0.Height z0For the micro- beam 110 of MEMS
Upper surface be located at the micro- beam of MEMS below bottom electrode 120 the distance between upper surface.Bottom electrode 120 and contact
130 upper surface is in same level.In one embodiment, it can use white light interferometer or laser co-focusing be micro-
Length L, width b and the height z of the mirror measurement micro- beam of MEMS0。
Step S200 obtains pick-up voltage, the eigenfrequncies and vibration models function of the micro- beam of MEMS.
Specifically, it when applying voltage on the micro- beam of MEMS and bottom electrode, is produced between the micro- beam of MEMS and bottom electrode
Raw electrostatic force, the micro- beam of MEMS deforms to bottom electrode direction under electrostatic force, when the voltage applied is greater than some
When value, the micro- beam of MEMS occurs swinging to bottom electrode generation actuation phenomenon suddenly, and voltage at this time is exactly the actuation electricity of the micro- beam of MEMS
Pressure.Eigenfrequncies and vibration models are the dynamic parameters of the micro- beam of MEMS, can be obtained by modal test, and model function of vibration can be with
The Method of Mode Fitting obtained to modal test obtains, and to the micro- beam of simple MEMS, model function of vibration can directly adopt analytical expression.
Step S300 determines MEMS according to the structural parameters of the micro- beam of MEMS, pick-up voltage, eigenfrequncies and vibration models function
The thickness of micro- beam.
It specifically, can be according to the structural parameters of the micro- beam of MEMS, pick-up voltage, eigenfrequncies and vibration models function foundation side
Journey is the thickness that can determine the micro- beam of MEMS by solving equation.
The method of the above-mentioned thickness for the micro- beam of in situ measurement MEMS, due to the structural parameters according to the micro- beam of MEMS, actuation
Voltage, eigenfrequncies and vibration models function, determine the thickness of the micro- beam of the MEMS, therefore can be realized the high-precision nothing of micro- cantilever thickness
On-line measurement is damaged, this is most important for the performance for rapidly and accurately evaluating MEMS device.
In one embodiment, as shown in figure 3, step S300, according to the structural parameters of the micro- beam of MEMS, pick-up voltage, consolidates
There are frequency and model function of vibration, determine the thickness of the micro- beam of MEMS, comprising:
Step S310 is determined according to the width of the micro- beam of MEMS and height, pick-up voltage, eigenfrequncies and vibration models function
Clearance distance between the lower surface of the micro- beam of MEMS and the upper surface of bottom electrode；And
Step S320 determines the thickness of the micro- beam of MEMS according to clearance distance and the micro- depth of beam of MEMS.
Specifically, first according to the width b and height z of the micro- beam of MEMS0, pick-up voltage Vp, intrinsic frequency f0And model function of vibrationThe clearance distance g between the lower surface of the micro- beam of MEMS and the upper surface of bottom electrode is determined, then according to clearance distance g, height
Spend z0The thickness of micro- beam is determined with the relationship of thickness h.
In one embodiment, step S310, according to the width of the micro- beam of MEMS and height, pick-up voltage, intrinsic frequency and
Model function of vibration determines the clearance distance between the lower surface of the micro- beam of MEMS and the upper surface of bottom electrode, comprising: joint is following public
Formula determines clearance distance g,
Wherein,
η is position parameter, and b is the width of micro- beam, and g is clearance distance, z0For height, VpFor pick-up voltage, ε0For permittivity of vacuum,
εrThe relative dielectric constant of medium between the micro- beam of MEMS and bottom electrode, ρ are the density of the micro- beam material of MEMS, f0It is intrinsic
Frequency,For model function of vibration.By analytic formula (1), available clearance distance g.
In one embodiment, step S320 determines the thickness of the micro- beam of MEMS according to clearance distance and the micro- depth of beam of MEMS
Degree, including thickness is determined according to the following formula,
H+g=z0, (3)
Wherein, h is the thickness of micro- beam, and g is clearance distance, z0For height.As shown in Figure 2, height z0For the micro- beam 110 of MEMS
Thickness h and the sum of clearance distance g.
In one embodiment, the micro- beam of MEMS is micro-cantilever, and the pick-up voltage for obtaining the micro- beam of MEMS includes: using electricity
Piezo-resistive method measures pick-up voltage.Specifically, applied between micro-cantilever 110 and bottom electrode 120 using DC power supply
Bias voltage monitors the contact resistance between micro-cantilever 110 and bottom contact 130 using multimeter, constantly increase biased electrical
Pressure indicates that 110 unstability of micro-cantilever is attracted, voltage at this time is when contact resistance becomes finite value from infinity
Pick-up voltage Vp。
In one embodiment, the micro- Liang Weiwei clamped beam of MEMS, the pick-up voltage for obtaining the micro- beam of MEMS includes: using electricity
Piezo-electric holds method and measures pick-up voltage.Specifically, apply biased electrical between micro- clamped beam and bottom electrode using DC power supply
Pressure, monitors the capacitor between micro- clamped beam and bottom electrode using multimeter, constantly increase bias voltage, when capacitance occurs to dash forward
When change, indicate that micro- clamped beam unstability is attracted, voltage at this time is pick-up voltage Vp。
Technical solution of the present invention and its bring beneficial effect are further illustrated combined with specific embodiments below.In this implementation
In example, by taking micro-cantilever as an example, it is known that thickness true value is 2.94 μm, and beam bottom gap true value is 1.05 μm, below with
Pick-up voltage, intrinsic frequency realize the on-line measurement of micro-cantilever thickness.
Implementation steps:
1) micro cantilever structure parameter is measured.In one embodiment, micro- using white light interferometer or laser co-focusing
The measurement to micro cantilever structure parameter may be implemented in mirror.The thickness of the known micro- beam sample of multiple and different MEMS is identical, and thickness is true
Real value is 2.94 μm.It is respectively 75 μm, 100 μm, 125 μm, 150 μm, 175 μm, 200 μ that measurement, which obtains the length L of different samples,
M, 250 μm, width b is 50 μm, and micro- depth of beam is z0=3.99 μm.
2) the pick-up voltage V of micro-cantilever is measuredp.In one embodiment, voltage-resistive method measurement can be used to be attracted
Voltage applies bias voltage using DC power supply between micro-cantilever and bottom electrode, monitors micro-cantilever using multimeter
Contact resistance between 110 and bottom contact 130, constantly increase bias voltage, when contact resistance becomes finite value from infinity,
Indicate that 110 unstability of micro-cantilever is attracted, voltage at this time is pick-up voltage Vp, pick-up voltage measurement result is shown in Table 1.
3) the intrinsic frequency f of micro-cantilever is measured0.In one embodiment, signal generator is connected to micro-cantilever
Between 110 and bottom electrode 120, and apply swept-frequency signal, is rung using the vibration of micro laser vialog measurement micro-cantilever 110
It answers, further obtains the intrinsic frequency f of micro-cantilever 1100, measurement result is shown in Table 1.
4) micro-cantilever known to is silicon materials, takes its density 2330kg/m3, permittivity of vacuum ε0It is 8.85 × 10-12F/
M, the relative dielectric constant ε of the medium between micro-cantilever 110 and bottom electrode 120rIt is 1, beam bottom portion is determined according to formula (1)
Clearance distance g, calculated result are shown in Table 2.
5) thickness h of micro-cantilever is calculated by formula (3), calculated result is shown in Table 2.As listed in Table 2, thickness h
Relative error is within 5%.In the case where the thickness of known multiple micro- beams is equal, the average value of multiple thickness values can be taken
2.85625 μm are used as measurement result, and 2.94 μm of true value of relative error of the measurement result and thickness is 2.85%.Thus may be used
Know, the error very little of the measurement result of micro- lossless in-situ measuring method of cantilever thickness provided by the present application.
| Serial number | Beam length (μm) | Intrinsic frequency (Hz) | Pick-up voltage (V) |
| 1 | 75 | 731820 | 76.2 |
| 2 | 100 | 410768 | 43.5 |
| 3 | 125 | 262487 | 28.1 |
| 4 | 150 | 182023 | 19.6 |
| 5 | 175 | 133576 | 14.5 |
| 6 | 200 | 102171 | 10.9 |
| 7 | 225 | 80663 | 9.3 |
| 8 | 250 | 65293 | 7.3 |
1 micro-cantilever pick-up voltage of table and intrinsic frequency
The clearance distance of 2 micro-cantilever of table and the measurement result of thickness
The application realizes micro thickness for precision present in current non-destructive measuring method is low and the big problem of difficulty
The lossless in situ measurement of high-precision, to quick and precisely evaluation MEMS device performance it is most important.
Present invention also provides a kind of devices 1000 of thickness for the micro- beam of in situ measurement MEMS, as shown in figure 4, the dress
Setting 1000 includes:
Structural parameters obtain module 100, and for obtaining the structural parameters of the micro- beam of MEMS, structural parameters include the micro- beam of MEMS
Length, width and height, highly for the upper surface of the micro- beam of MEMS be located at the micro- beam of MEMS below bottom electrode upper surface it
Between distance；
Dynamic characteristics and electrical characteristic parameter obtain module 200, for obtain the micro- beam of MEMS pick-up voltage intrinsic frequency and
Model function of vibration；
Thickness determining module 300, for according to the structural parameters of the micro- beam of MEMS, pick-up voltage, eigenfrequncies and vibration models letter
Number, determines the thickness of the micro- beam of MEMS.
The device of the above-mentioned thickness for the micro- beam of in situ measurement MEMS, due to the structural parameters according to the micro- beam of MEMS, actuation
Voltage, eigenfrequncies and vibration models function, determine the thickness of the micro- beam of the MEMS, therefore can be realized the high-precision nothing of micro- cantilever thickness
On-line measurement is damaged, this is most important for the performance for rapidly and accurately evaluating MEMS device.
In one embodiment, thickness determining module 300 is specifically used for:
According to the width of the micro- beam of MEMS and height, pick-up voltage, eigenfrequncies and vibration models function, determine under the micro- beam of MEMS
Clearance distance between surface and the upper surface of bottom electrode；And
According to clearance distance and the micro- depth of beam of MEMS, the thickness of the micro- beam of MEMS is determined.
In one embodiment, according to the width of the micro- beam of MEMS and height, pick-up voltage, eigenfrequncies and vibration models function,
Determine the clearance distance between the lower surface of the micro- beam of MEMS and the upper surface of bottom electrode, comprising: between joint following formula determines
Stand-off distance from g,
Wherein,
η is position parameter, and b is the width of micro- beam, and g is clearance distance, z0For height, VpFor pick-up voltage, ε0It is normal for vacuum dielectric
Number, εrThe relative dielectric constant of medium between the micro- beam of MEMS and bottom electrode, ρ are the density of the micro- beam material of MEMS, f0It is solid
There is frequency,For model function of vibration.By parsing above formula, available clearance distance g.
Each technical characteristic of above embodiments can be combined arbitrarily, for simplicity of description, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance
Shield all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of method of the thickness for the micro- beam of in situ measurement MEMS, which is characterized in that the described method includes:
The structural parameters of the micro- beam of the MEMS are obtained, the structural parameters include length, width and the height of the micro- beam of the MEMS,
The height is between the upper surface of the micro- beam of the MEMS and the upper surface of the bottom electrode below the micro- beam of the MEMS
Distance；
Obtain pick-up voltage, the eigenfrequncies and vibration models function of the micro- beam of the MEMS；
According to the structural parameters of the micro- beam of the MEMS, pick-up voltage, eigenfrequncies and vibration models function, the micro- beam of the MEMS is determined
Thickness.
2. the method according to claim 1, wherein the structural parameters according to the micro- beam of the MEMS, actuation
Voltage, eigenfrequncies and vibration models function, determine the thickness of the micro- beam of the MEMS, comprising:
According to the width of the micro- beam of the MEMS and height, pick-up voltage, eigenfrequncies and vibration models function, the micro- beam of the MEMS is determined
Lower surface and the bottom electrode upper surface between clearance distance；And
According to the clearance distance and the micro- depth of beam of the MEMS, the thickness of the micro- beam of the MEMS is determined.
3. according to the method described in claim 2, it is characterized in that, the width according to the micro- beam of the MEMS and height, suction
Voltage, eigenfrequncies and vibration models function are closed, is determined between the lower surface of the micro- beam of the MEMS and the upper surface of the bottom electrode
Clearance distance, comprising: joint following formula determine the clearance distance g,
Wherein,
η is position parameter, and b is the width of micro- beam, and g is the clearance distance, z0For the height, VpFor the pick-up voltage, ε0
For permittivity of vacuum, εrThe relative dielectric constant of medium between the micro- beam of the MEMS and the bottom electrode, ρ are described
The density of the micro- beam material of MEMS, f0For the intrinsic frequency,For the model function of vibration.
4. according to the method described in claim 3, it is characterized in that, described according to the clearance distance and the micro- beam of the MEMS
Highly, it determines the thickness of the micro- beam of the MEMS, including determines the thickness according to the following formula,
H+g=z0,
Wherein, h is the thickness, and g is the clearance distance, z0For the height.
5. the method according to any one of claims 1-4, which is characterized in that the knot for obtaining the micro- beam of MEMS
Structure parameter, comprising:
Length, width and the height of the micro- beam of the MEMS are measured using white light interferometer or laser confocal microscope.
6. the method according to any one of claims 1-4, which is characterized in that
The micro- beam of MEMS is micro-cantilever, the pick-up voltage for obtaining the micro- beam of MEMS, comprising: use voltage-resistive method
Measure the pick-up voltage；Or
The micro- Liang Weiwei clamped beam of MEMS, the pick-up voltage for obtaining the micro- beam of MEMS, comprising: use voltage-capacitance method
Measure the pick-up voltage.
7. method according to claim 6, which is characterized in that the intrinsic frequency for obtaining micro- beam, comprising:
Signal generator is connected to micro- beam and the bottom electrode both ends, and applies sine sweep signal, utilization is micro-
Laser vibration measurer measurement micro- vibration of beam response, to obtain the intrinsic frequency of micro- beam.
8. a kind of device of the thickness for the micro- beam of in situ measurement MEMS, it is characterised in that described device includes:
Structural parameters obtain module, and for obtaining the structural parameters of the micro- beam of the MEMS, the structural parameters include the MEMS
Length, width and the height of micro- beam, the height are the upper surface of the micro- beam of the MEMS and are located at below the micro- beam of the MEMS
The distance between upper surface of bottom electrode；
Dynamic characteristics and electrical characteristic parameter obtain module, for obtaining pick-up voltage, intrinsic frequency and the vibration of the micro- beam of the MEMS
Type function；
Thickness determining module, for according to the structural parameters of the micro- beam of the MEMS, pick-up voltage, eigenfrequncies and vibration models function,
Determine the thickness of the micro- beam of the MEMS.
9. device according to claim 8, which is characterized in that the thickness determining module is specifically used for:
According to the width of the micro- beam of the MEMS and height, pick-up voltage, eigenfrequncies and vibration models function, the micro- beam of the MEMS is determined
Lower surface and the bottom electrode upper surface between clearance distance；And
According to the clearance distance and the micro- depth of beam of the MEMS, the thickness of the micro- beam of the MEMS is determined.
10. device according to claim 9, which is characterized in that the width according to the micro- beam of the MEMS and height are inhaled
Voltage, eigenfrequncies and vibration models function are closed, is determined between the lower surface of the micro- beam of the MEMS and the upper surface of the bottom electrode
Clearance distance, comprising: joint following formula determine the clearance distance g,
Wherein,
η is position parameter, and b is the width of micro- beam, and g is the clearance distance, z0For the height, VpFor the pick-up voltage, ε0
For permittivity of vacuum, εrThe relative dielectric constant of medium between the micro- beam of the MEMS and the bottom electrode, ρ are described
The density of the micro- beam material of MEMS, f0For the intrinsic frequency,For the model function of vibration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811306759.7A CN109579683B (en) | 2018-11-05 | 2018-11-05 | Method and device for in-situ measurement of thickness of MEMS micro-beam |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811306759.7A CN109579683B (en) | 2018-11-05 | 2018-11-05 | Method and device for in-situ measurement of thickness of MEMS micro-beam |
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| Publication Number | Publication Date |
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| CN109579683A true CN109579683A (en) | 2019-04-05 |
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| US20020153236A1 (en) * | 2001-02-28 | 2002-10-24 | Insang Song | Electrostatically-actuated capacitive MEMS (micro electro mechanical system) switch |
| CN1609604A (en) * | 2004-11-19 | 2005-04-27 | 东南大学 | Measuring structure and method for micro-electronic mechanical system multi-layer membrane stress and yang's modulus |
| CN1828308A (en) * | 2006-04-07 | 2006-09-06 | 东南大学 | On-line testing and analyzing device and method for microelectromechanical system component material parameter |
| CN106996893A (en) * | 2017-04-11 | 2017-08-01 | 东南大学 | The mechanics parameter measuring method and device of a kind of double-layer double-end clamped beam |
| CN108170967A (en) * | 2018-01-05 | 2018-06-15 | 哈尔滨工程大学 | A kind of elastic beam structure PVDF modal sensor generation methods |
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| US20020153236A1 (en) * | 2001-02-28 | 2002-10-24 | Insang Song | Electrostatically-actuated capacitive MEMS (micro electro mechanical system) switch |
| CN1609604A (en) * | 2004-11-19 | 2005-04-27 | 东南大学 | Measuring structure and method for micro-electronic mechanical system multi-layer membrane stress and yang's modulus |
| CN1828308A (en) * | 2006-04-07 | 2006-09-06 | 东南大学 | On-line testing and analyzing device and method for microelectromechanical system component material parameter |
| CN106996893A (en) * | 2017-04-11 | 2017-08-01 | 东南大学 | The mechanics parameter measuring method and device of a kind of double-layer double-end clamped beam |
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