CN1095596C - Linear X-ray detector array with new structure and its detection method - Google Patents
Linear X-ray detector array with new structure and its detection method Download PDFInfo
- Publication number
- CN1095596C CN1095596C CN 99122309 CN99122309A CN1095596C CN 1095596 C CN1095596 C CN 1095596C CN 99122309 CN99122309 CN 99122309 CN 99122309 A CN99122309 A CN 99122309A CN 1095596 C CN1095596 C CN 1095596C
- Authority
- CN
- China
- Prior art keywords
- phototransistor
- ray detector
- linear
- detector array
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001514 detection method Methods 0.000 title description 6
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 15
- 230000007017 scission Effects 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- -1 aluminium arsenic Chemical compound 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- 239000003814 drug Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 206010006187 Breast cancer Diseases 0.000 description 1
- 208000026310 Breast neoplasm Diseases 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 210000000038 chest Anatomy 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000399 orthopedic effect Effects 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
本发明X光探测器由多个按一维排列的光电晶体管组成，各光电晶体管由高电阻率的基区及其两侧的PN结构成。工作时，使其发射结正偏而集电结反偏，以半导体材料的自然解理面为接收X光入射的端面，使X光的入射方向平行于光电晶体管的电极条方向且与单晶材料的晶向垂直，然后从每个光电晶体管的电极条取出经过放大的光电信号。本发明工作电压低、获取的图象质量好、制造成本低廉，配合机械扫描可以直接探测二维X光图象。
The X-ray detector of the present invention is composed of a plurality of phototransistors arranged in one dimension, and each phototransistor is composed of a base region with high resistivity and PN structures on both sides thereof. When working, the emitter junction is forward-biased and the collector junction is reverse-biased. The natural cleavage surface of the semiconductor material is used as the end face to receive the incident X-ray, so that the incident direction of the X-ray is parallel to the direction of the electrode strip of the phototransistor and is in line with the single crystal The crystal orientation of the material is vertical, and then the amplified photoelectric signal is extracted from the electrode strip of each phototransistor. The invention has low working voltage, good image quality and low manufacturing cost, and can directly detect two-dimensional X-ray images in conjunction with mechanical scanning.
Description
本发明涉及一种X光探测器及其探测方法，属于H01L 27/00类半导体器件技术领域。The invention relates to an X-ray detector and a detection method thereof, belonging to the technical field of H01L 27/00 semiconductor devices.
在医学中拍X光片是目前广泛采用并且非常有效的疾病诊断技术之一，如用在牙科、骨科、拍胸片、乳腺癌检查以及各种结石诊断等，它需要用到大量底片和化学显影过程，既浪费又不便于保存，而且不能马上知道结果。除医学外，X光技术还广泛应用于安全检查、无损探伤、物质结构分析、天文观测以及高能物理研究等领域。近年来，计算机数字化技术发展非常迅速，数字化的X光诊断技术是X光医学发展的必然趋势，是计算机辅助诊断技术的重要组成部分(参阅Yaffe，et al.，Physics in Medicine and Biology，Vol.42，p.1-39，1997)。由于数字X光技术可以更准确地记录X光，能够得到更高质量的X光图象，能够更容易地进行图象处理、分析与传送，因而近年来对这项技术的研究与开发受到人们的极大关注，其市场潜力和经济效益非常巨大(参阅Frost & Sullivan-Company Press Release，November 16，1998)。Taking X-ray films in medicine is one of the widely used and very effective disease diagnosis techniques at present, such as in dentistry, orthopedics, chest radiography, breast cancer examination and various stone diagnosis, etc. It requires a large number of negative films and chemical The development process is wasteful and inconvenient to preserve, and the result cannot be known immediately. In addition to medicine, X-ray technology is also widely used in safety inspection, non-destructive flaw detection, material structure analysis, astronomical observation and high-energy physics research and other fields. In recent years, computer digital technology has developed very rapidly. Digital X-ray diagnostic technology is an inevitable trend in the development of X-ray medicine and an important part of computer-aided diagnostic technology (see Yaffe, et al., Physics in Medicine and Biology, Vol. 42, p.1-39, 1997). Because digital X-ray technology can record X-rays more accurately, can obtain higher-quality X-ray images, and can perform image processing, analysis and transmission more easily, the research and development of this technology has been favored by people in recent years. Its market potential and economic benefits are huge (see Frost & Sullivan-Company Press Release, November 16, 1998).
由于一般材料对X光的吸收系数非常小，目前获取数字化X光图象的方法，如医学中的CT，都是先用荧光板将X光图象转变成可见光图象，然后再用对可见光灵敏的光电阵列探测器-数字摄像仪(例如CCD)得到最终数字化的X光图象。荧光板的引入，不但增加成本，而且会降低X光图象的质量(荧光板越厚，灵敏度越高，但分辨率越低；反之亦然)。因此，利用集成的固态X光阵列探测单元将X光图象直接转变成可供微型计算机读取的数值化的电信号，以取代荧光板和对可见光灵敏的数字摄像仪组合，应该是一种最直接、图象的质量最好、成本最低廉的获取二维数字化X光图象的方法，该技术近年受到研究人员的高度重视。由于单晶硅半导体材料具有工艺成熟、便宜、适合较大阵列探测器的制作、长期使用材料不易退化以及所制作的器件工作速度较快等优点，在数字X光探测器的研究中受到高度重视(参阅Cisternino，A.，et al.，Physica Medica，Vol：13，p.214-17，1997)。Arfelli等人采用硅材料和端面接收X光的器件结构，与一般利用材料正面或背面接收X光的探测器相比，吸收X光的长度在没有增加材料厚度(因而没有增加工作电压)的情况下大幅增加，有效地弥补了一般材料对X光吸收系数小的缺点，对能量为20KeV的X光其量子效率达到80％。但Arfelli等人报导的器件为PIN光电二极管结构，没有增益，灵敏度较低；并且器件采用的硅材料较厚，工作电压较高，PN结暴露在容易损坏的端面，致使器件的漏电流大幅增加(参阅Arfelli，et al.，Nucl.Instr.& Meth.in Phys.Res.A，Vol：377，p.508-13，1996)。Lynch等人报道了采用硅材料和雪崩光电二极管(APD)结构的X光探测器，虽然此种器件结构有增益，灵敏度较高，但由于采用正面入射，吸收X光的长度小，该器件只能用于能量小于2KeV的X光探测(参阅S.P Lynch，et al.，IEEE Trans.On Nucl.Science，Vol.44，p.581-586，1997)。并且，APD有工作电压较高，雪崩工作点不易控制，常产生较大噪声的缺点。Due to the very small absorption coefficient of general materials for X-rays, the current methods of obtaining digital X-ray images, such as CT in medicine, first use fluorescent plates to convert X-ray images into visible light images, and then use visible light Sensitive photoelectric array detector-digital camera (such as CCD) obtains the final digitized X-ray image. The introduction of the fluorescent plate not only increases the cost, but also reduces the quality of the X-ray image (the thicker the fluorescent plate, the higher the sensitivity, but the lower the resolution; and vice versa). Therefore, using an integrated solid-state X-ray array detection unit to directly convert the X-ray image into a numerical electrical signal that can be read by a microcomputer, to replace the combination of a fluorescent plate and a digital camera sensitive to visible light, should be a It is the most direct method with the best image quality and the cheapest cost to obtain two-dimensional digital X-ray images. This technology has been highly valued by researchers in recent years. Because the single crystal silicon semiconductor material has the advantages of mature technology, low cost, suitable for the production of larger array detectors, long-term use of the material is not easy to degrade, and the device works faster, etc., it has been highly valued in the research of digital X-ray detectors (referring to Cisternino, A., et al., Physica Medica, Vol:13, p.214-17, 1997). Arfelli et al. used silicon materials and a device structure that receives X-rays on the end face. Compared with detectors that generally use the front or back of the material to receive X-rays, the length of the absorbed X-rays does not increase the thickness of the material (and thus does not increase the operating voltage). The substantial increase in the energy density effectively makes up for the shortcoming of the general material's small absorption coefficient for X-rays, and its quantum efficiency reaches 80% for X-rays with an energy of 20KeV. However, the device reported by Arfelli et al. is a PIN photodiode structure with no gain and low sensitivity; and the silicon material used in the device is thicker, the working voltage is higher, and the PN junction is exposed on the easily damaged end face, resulting in a substantial increase in the leakage current of the device (see Arfelli, et al., Nucl. Instr. & Meth. in Phys. Res. A, Vol: 377, p.508-13, 1996). Lynch et al. reported an X-ray detector using silicon materials and an avalanche photodiode (APD) structure. Although this device structure has gain and high sensitivity, due to the front incident, the length of the absorbed X-ray is small, and the device only It can be used for X-ray detection with energy less than 2KeV (see S.P Lynch, et al., IEEE Trans. On Nucl. Science, Vol.44, p.581-586, 1997). Moreover, the APD has the disadvantages of high operating voltage, difficult control of the avalanche operating point, and high noise.
光电晶体管和APD一样对光信号产生的光电流具有放大作用(参阅Y.Wang，et al.，J.Appl.Phys.，Vol.74，p.6978-6991，1993)。光电晶体管由一个称为基区的半导体导电层以及在其两侧的半导体PN结构成，在PN结之外是电极。器件工作时一个PN结处于正向偏置状态，该PN结称为发射结，另外一个PN结处于反向耗尽偏置状态，该PN结称为集电结。如果基区的电阻率选择恰当，光电晶体管可以工作在集电结耗尽区和发射结耗尽区将要或者已经相碰的状态。这种光电晶体管一般称作穿通型光电晶体管。穿通型光电晶体管不但有较大的光电转换增益，而且噪声较小(参阅Y.Wang，et al.，J.Appl.Phys.，Vol.74，p.6978-6991，1993)。Phototransistors, like APDs, amplify the photocurrent generated by optical signals (see Y.Wang, et al., J.Appl.Phys., Vol.74, p.6978-6991, 1993). The phototransistor consists of a semiconductor conductive layer called the base region and semiconductor PN structures on both sides, and electrodes outside the PN junction. When the device is working, one PN junction is in a forward biased state, the PN junction is called the emitter junction, and the other PN junction is in the reverse depletion biased state, and the PN junction is called the collector junction. If the resistivity of the base region is selected properly, the phototransistor can work in a state where the collector junction depletion region and the emitter junction depletion region will or have already collided. Such a phototransistor is generally called a punch-through phototransistor. The pass-through phototransistor not only has a large photoelectric conversion gain, but also has low noise (see Y.Wang, et al., J.Appl.Phys., Vol.74, p.6978-6991, 1993).
针对上述问题，本发明的目的是提供一种能够直接探测X光图象、获取的图象质量好、制造成本低廉的线阵列X光探测器，并提出一种使用该线阵列X光探测器探测X光的方法。In view of the above problems, the purpose of the present invention is to provide a line array X-ray detector that can directly detect X-ray images, obtain images with good quality and low manufacturing cost, and propose a method using the line array X-ray detector A method of detecting X-rays.
为实现上述目的，本发明采取以下技术方案：To achieve the above object, the present invention takes the following technical solutions:
一种新结构线阵列X光探测器，其特征在于：它由多个按一维排列的光电晶体管组成，每个光电晶体管包括基区、发射区、集电区、发射结、集电结、自然解理面；发射区和集电区之一的外侧制有独立的电极条，另一区的外侧制有公共电极；各光电晶体管的自然解理面在同一平面上。A line array X-ray detector with a new structure is characterized in that it is composed of a plurality of phototransistors arranged in one dimension, and each phototransistor includes a base region, an emission region, a collector region, an emitter junction, a collector junction, Natural cleavage plane; independent electrode strips are formed on the outside of one of the emitter area and the collector area, and a common electrode is formed on the outside of the other area; the natural cleavage planes of each phototransistor are on the same plane.
所述基区的掺杂浓度大于其本征载流子浓度且小于1014cm-3。The doping concentration of the base region is greater than the intrinsic carrier concentration and less than 10 14 cm -3 .
所述光电晶体管为N+-P--N+或P+-N--P+基本结构，所用的半导体材料是<100>晶向或<110>晶向的单晶硅、<100>晶向的砷化镓、CdZnTe半导体单晶材料之一，所用半导体材料的厚度为50-200μm，以便容易解理，形成镜面般光滑的入射端面。The phototransistor has a basic structure of N + -P - -N + or P + -N - -P + , and the semiconductor material used is single crystal silicon with <100> crystal orientation or <110> crystal orientation, <100> crystal orientation One of gallium arsenide and CdZnTe semiconductor single crystal materials, the thickness of the semiconductor material used is 50-200μm, so that it can be easily cleaved and form a mirror-like smooth incident end surface.
所述光电晶体管为穿通型光电晶体管。The phototransistor is a pass-through phototransistor.
所述电极条的方向与自然解理面垂直。The direction of the electrode strips is perpendicular to the natural cleavage plane.
与所述电极条相接触的区，对于衬底为硅的材料而言是单晶硅、多晶硅或非晶硅，对于衬底为砷化镓的材料而言是砷化镓或铝镓砷。The region in contact with the electrode strips is monocrystalline silicon, polycrystalline silicon or amorphous silicon for materials where the substrate is silicon, and gallium arsenide or aluminum gallium arsenide for materials where the substrate is gallium arsenide.
使用本发明的新结构线阵列X光探测器探测X光的方法是：以光电晶体管的自然解理面作为接收X光入射的端面；使X光入射方向平行于光电晶体管的电极条且与单晶材料的晶向垂直；在每个光电晶体管的两个电极上施加工作电压，使其一个PN结处于正向偏置而另一个PN结处于反向偏置；从每个光电晶体管的电极条取出光电信号。The method of using the new structure line array X-ray detector of the present invention to detect X-rays is: use the natural cleavage plane of the phototransistor as the end face receiving the X-ray incident; The crystal direction of the crystalline material is vertical; the working voltage is applied to the two electrodes of each phototransistor, so that one PN junction is in forward bias and the other PN junction is in reverse bias; from the electrode strip of each phototransistor Take out the photoelectric signal.
由于本发明采用穿通型光电晶体管，故不但有较大的光电转换增益、工作电压低，而且噪声较小。由于本发明采用的半导体材料较薄以便于解理，故暴露在解理端面上的PN结的损伤小，表面漏电和暗电流小。由于本发明采用端面接受X光入射的结构，吸收X光的路径长，因此量子效率高、可探测的X光的能量范围广。和目前广泛采用的荧光板加对可见光灵敏的光电阵列探测器组合相比，本发明既有穿通型光电晶体管具有的高灵敏度、低噪声的优点，又有端面接受X光入射结构的高量子效率的优点。本发明配合机械扫描可以直接获取反差特性好、灵敏度和分辨率高的二维X光图象。此外，由于该阵列探测器的探测灵敏度高，与之相配的数据读取电路也较简单。Since the present invention adopts the pass-through phototransistor, it not only has relatively large photoelectric conversion gain, low working voltage, but also low noise. Since the semiconductor material used in the present invention is relatively thin to facilitate cleavage, the damage of the PN junction exposed on the cleavage end surface is small, and the surface leakage and dark current are small. Since the present invention adopts the structure that the end face accepts the incident X-ray, the path for absorbing the X-ray is long, so the quantum efficiency is high, and the energy range of the detectable X-ray is wide. Compared with the currently widely used combination of fluorescent plates and photoelectric array detectors sensitive to visible light, the present invention not only has the advantages of high sensitivity and low noise of the punch-through phototransistor, but also has the high quantum efficiency of the X-ray incident structure on the end face The advantages. The present invention cooperates with mechanical scanning to directly acquire two-dimensional X-ray images with good contrast characteristics, high sensitivity and high resolution. In addition, due to the high detection sensitivity of the array detector, the corresponding data reading circuit is relatively simple.
以下结合实施例具体地说明本发明：The present invention is specifically described below in conjunction with embodiment:
图1是本发明的结构示意图。Fig. 1 is a schematic structural view of the present invention.
本发明新结构线阵列X光探测器由多个在同一芯片上按一维排列的光电晶体管组成。图1所示为成一行排列的光电晶体管阵列，竖直虚线右侧表示其中一个光电晶体管。每个光电晶体管包括P型基区1、N+型发射区2、N+型集电区3、自然解理面4，基区1与发射区2、集电区3交界处分别形成发射结、集电结，发射区2的外侧制有独立的电极条5，集电区3的外侧制有公共电极6。各光电晶体管的自然解理面4在同一平面上，各公共电极6连通。The new structure line array X-ray detector of the invention is composed of a plurality of phototransistors arranged one-dimensionally on the same chip. Figure 1 shows an array of phototransistors arranged in a row, with one phototransistor shown to the right of the vertical dashed line. Each phototransistor includes a P-type base region 1, an N + -type emitter region 2, an N + -type collector region 3, and a natural cleavage surface 4, and an emitter junction is formed at the junction of the base region 1, the emitter region 2, and the collector region 3 , Collector junction, an independent electrode strip 5 is formed on the outside of the emitter region 2, and a common electrode 6 is formed on the outside of the collector region 3. The natural cleavage planes 4 of the phototransistors are on the same plane, and the common electrodes 6 are connected.
器件用<100>晶向硅材料制作，光电晶体管为N+-P--N+基本结构，基区1的电阻率很高，掺杂浓度很低，掺杂浓度大于其本征载流子浓度且小于1014cm-3。器件所用半导体材料的厚度a为50-200μm，以便容易解理，形成镜面般光滑的入射端面。The device is made of <100> crystalline silicon material, the phototransistor is N + -P - -N + basic structure, the resistivity of the base region 1 is very high, the doping concentration is very low, and the doping concentration is greater than its intrinsic carrier concentration and less than 10 14 cm -3 . The thickness a of the semiconductor material used in the device is 50-200 μm, so as to be easy to cleave and form a mirror-like smooth incident end surface.
本发明的新结构线阵列X光探测器用于探测X光，其方法是：The new structure line array X-ray detector of the present invention is used for detecting X-ray, and its method is:
以光电晶体管的自然解理面4作为接收X光入射的端面；使X光入射方向平行于光电晶体管的电极条5且与单晶材料的晶向垂直；在每个光电晶体管的两个电极5、6之间施加工作电压，使发射结处于正向偏置而集电结处于反向偏置；从每个光电晶体管的电极条5处取出光电信号。此光电信号已是对入射基区1的X光信号进行探测并且放大后的信号。The natural cleavage surface 4 of the phototransistor is used as the end face for receiving X-ray incidence; the X-ray incident direction is parallel to the electrode strip 5 of the phototransistor and perpendicular to the crystal direction of the single crystal material; two electrodes 5 of each phototransistor , 6 to apply a working voltage, so that the emitter junction is in forward bias and the collector junction is in reverse bias; take out the photoelectric signal from the electrode strip 5 of each phototransistor. The photoelectric signal is the detected and amplified signal of the X-ray signal incident on the base region 1 .
使用中，每个光电晶体管作为一个X光接收单元，每个X光接收单元的面积由半导体材料厚度a和电极条5的宽度决定。将本发明的新结构线阵列X光探测器做成扫描头，配合相应的机械动作，即可直接获取反差特性好、灵敏度和分辨率高的二维X光图象。In use, each phototransistor acts as an X-ray receiving unit, and the area of each X-ray receiving unit is determined by the thickness a of the semiconductor material and the width of the electrode strip 5 . The new structure line array X-ray detector of the present invention is made into a scanning head, and with corresponding mechanical action, two-dimensional X-ray images with good contrast characteristics, high sensitivity and high resolution can be directly acquired.
在本发明的其它实施例中：In other embodiments of the invention:
光电晶体管可以工作在集电结耗尽区和发射结耗尽区将要或者已经相碰的状态，即该光电晶体管可以为穿通型光电晶体管。The phototransistor can work in a state where the collector junction depletion region and the emitter junction depletion region are about to or have collided, that is, the phototransistor can be a punch-through phototransistor.
电极条的方向与自然解理面垂直。The direction of the electrode strips is perpendicular to the natural cleavage plane.
与电极条5相接触的区，对于衬底为硅的材料而言可以是多晶硅或非晶硅，对于衬底为砷化镓的材料而言可以是铝镓砷，以便形成宽禁带发射结、提高光电晶体管的光电流增益。The area in contact with the electrode strip 5 may be polysilicon or amorphous silicon for the substrate material of silicon, or aluminum gallium arsenide for the substrate material of gallium arsenide, so as to form a wide bandgap emitter junction , Improving the photocurrent gain of the phototransistor.
光电晶体管最好是N+-P--N+基本结构，也可以是P+-N--P+或其它变种形式的结构。其中P+和N+分别指受主和施主重掺杂层，其掺杂浓度大于1018cm-3；P-和N-分别指掺杂浓度很低，小于1014cm-3的受主层和施主层。The phototransistor preferably has an N + -P - -N + basic structure, and can also be a P + -N - -P + or other variant structure. Among them, P + and N + respectively refer to acceptor and donor heavily doped layers, and their doping concentration is greater than 10 18 cm -3 ; P - and N - respectively refer to acceptors with very low doping concentration, less than 10 14 cm -3 layers and donor layers.
器件最好用硅材料制作，也可选用砷化镓或CdZnTe等其它半导体单晶材料。对硅材料可以是<100>晶向或<110>晶向；对砷化镓材料最好是<100>晶向。The device is preferably made of silicon material, and other semiconductor single crystal materials such as gallium arsenide or CdZnTe can also be used. For silicon materials, it can be <100> crystal orientation or <110> crystal orientation; for gallium arsenide materials, it is best to be <100> crystal orientation.
需要说明的是，上述实施例仅为说明本发明而非限制本发明的专利范围，任何基于本发明的等同变换技术，均应在本发明的专利保护范围内。It should be noted that the above-mentioned embodiments are only for illustrating the present invention but not limiting the patent scope of the present invention, and any equivalent transformation technology based on the present invention shall be within the scope of the patent protection of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99122309 CN1095596C (en) | 1999-10-29 | 1999-10-29 | Linear X-ray detector array with new structure and its detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99122309 CN1095596C (en) | 1999-10-29 | 1999-10-29 | Linear X-ray detector array with new structure and its detection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1250230A CN1250230A (en) | 2000-04-12 |
| CN1095596C true CN1095596C (en) | 2002-12-04 |
Family
ID=5282432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99122309 Expired - Fee Related CN1095596C (en) | 1999-10-29 | 1999-10-29 | Linear X-ray detector array with new structure and its detection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1095596C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1293374C (en) * | 2002-04-17 | 2007-01-03 | 北京师范大学 | Novel structure photoelectric detector capable of measuring wave length and detecting method |
| CN101577284B (en) * | 2008-05-09 | 2011-04-13 | 同方威视技术股份有限公司 | Semiconductor detector for measuring radiation and imaging device |
| CN102820287A (en) * | 2012-08-03 | 2012-12-12 | 中国科学院上海技术物理研究所 | Solar battery with pn junction array light acceptance structure |
| CN107923987B (en) * | 2015-09-08 | 2020-05-15 | 深圳帧观德芯科技有限公司 | Method for producing an X-ray detector |
| CN106783904B (en) | 2017-01-03 | 2019-07-05 | 京东方科技集团股份有限公司 | Photoelectricity testing part and photoelectric detection system |
| CN108346711B (en) * | 2018-02-08 | 2019-11-19 | 重庆邮电大学 | Improved Fabrication Method of Vertical Structure Photodetector |
| CN115706175B (en) * | 2021-08-09 | 2024-02-27 | 北京一径科技有限公司 | Photoelectric detection array, photoelectric detector and laser radar |
-
1999
- 1999-10-29 CN CN 99122309 patent/CN1095596C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1250230A (en) | 2000-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7417216B2 (en) | Fabrication of low leakage-current backside illuminated photodiodes | |
| EP1376105A2 (en) | Method and apparatus for X-ray imaging | |
| US20100014631A1 (en) | Scintillator based x-ray sensitive integrated circuit element with depleted electron drift region | |
| CN101752391B (en) | Snow slide drifting detector with MOS fully-depleted drifting channel and detecting method thereof | |
| JP2003264280A (en) | Detector | |
| CN102569319B (en) | Photoelectric sensor assembly and the method being used for providing photoelectric sensor assembly | |
| JP2686263B2 (en) | Radiation detection element | |
| CN113889548B (en) | A high-sensitivity detection structure based on perovskite avalanche tube and its preparation method | |
| CN1095596C (en) | Linear X-ray detector array with new structure and its detection method | |
| JPH07209431A (en) | X-ray detection element and method of operating the element | |
| TW200404368A (en) | Photoelectric conversion device, image scanning apparatus, and manufacturing method of the photoelectric conversion device | |
| CN113658971A (en) | Radiation detector based on graphene charge-coupled device | |
| JP2696860B2 (en) | Radiation detection element | |
| JPS59500539A (en) | photodetector | |
| CN217588958U (en) | Photodiode and array thereof, radioactive detector and array thereof and detection device | |
| JPWO2007113899A1 (en) | Radiation detector | |
| JP2003240861A (en) | Radiation detection element, radiation imaging device, and radiation detection method | |
| US20080258072A1 (en) | Detector for Ionizing Radiation | |
| CN214503419U (en) | CT detector module based on dark silicon detector module | |
| Chen et al. | Design and fabrication of PIN photodiode used in PET photon detection | |
| Ji et al. | Advanced photodiode detector for medical CT imaging: design and performance | |
| TWI288475B (en) | Photo sensor and its preparation method | |
| Tull et al. | New high sensitivity silicon photodetectors for medical imaging applications | |
| Sudharsanan et al. | Performance of PIN CdZnTe radiation detectors and their unique advantages | |
| CN116504851A (en) | Pixel array detector with gate structure electrode and its preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |