CN1095596C - Linear X-ray detector array with new structure and its detection method - Google Patents
Linear X-ray detector array with new structure and its detection method Download PDFInfo
- Publication number
- CN1095596C CN1095596C CN 99122309 CN99122309A CN1095596C CN 1095596 C CN1095596 C CN 1095596C CN 99122309 CN99122309 CN 99122309 CN 99122309 A CN99122309 A CN 99122309A CN 1095596 C CN1095596 C CN 1095596C
- Authority
- CN
- China
- Prior art keywords
- phototransistor
- ray detector
- linear
- detector array
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
The present invention relates to an X-ray detector which is composed of a plurality of optoelectronic transistors in a one-dimensional array, and each optoelectronic transistor is composed of a base region with high resistivity and a PN structure on both sides of the base region. During operation, the emitter junction of the X-ray detector is positively biased while the collector junction is reversely biased, the natural cleavage surface of a semiconducting material is used as an end surface to receive incident X-ray, and thus, the incidence direction of the X-ray is parallel to the direction of electrode strips of the optoelectronic transistors and is perpendicular to the crystal direction of a monocrystal material; then, amplified electrooptical signals are taken out from the electrode strip of each optoelectronic transistor. The present invention has the advantages of low working voltage, good quality of obtained images, and low manufacturing cost; the present invention can be matched with a mechanical scanner to directly detect two-dimensional X-ray images.
Description
The present invention relates to a kind of x-ray detector and detection method thereof, belong to H01L 27/00 based semiconductor device technology field.
Clapping the X-ray sheet in medical science is one of extensive at present employing and very effective medical diagnosis on disease technology, as be used in dentistry, orthopaedics, bat rabat, breast cancer inspection and various calculus diagnosis etc., it need use a large amount of egative films and chemical development process, not only waste but also be not easy to preserve, and can not the horse back knowledge of result.Except that medical science, the X-ray technology also is widely used in fields such as safety inspection, nondestructive inspection, structure of matter analysis, astronomical observation and study of high energy physics.In recent years, the digital computer technology development is very fast, digitized x-ray technology is the inexorable trend of X-ray medical development, the important component part that is the computer-aided diagnosis technology (is consulted Yaffe, et al., Physics in Medicine and Biology, Vol.42, p.1-39,1997).Because the digital X-ray technology can write down X-ray more accurately, can access higher-quality X light image, can more easily carry out image processing, analyze and transmit, thereby in recent years this Study on Technology and exploitation being received people's very big concern, its market potential and economic benefit are very huge (consults Frost ﹠amp; Sullivan-Company Press Release, November 16,1998).
Because general material is very little to the absorption coefficient of X-ray, obtain the method for digitized X-ray image at present, as the CT in the medical science, all be with fluorescent plate X light image to be transformed into the visible light image earlier, and then use photoelectric array detector-digital camera instrument (for example CCD) to obtain final digitized X light image the visible light sensitivity.The introducing of fluorescent plate not only increases cost, and (fluorescent plate is thick more, and sensitivity is high more, but resolution is low more can to reduce the quality of X light image; Vice versa).Therefore, utilize integrated solid-state X-ray array detection unit X light image directly to be transformed into the signal of telecommunication that quantizes that can supply microcomputer to read, to replace fluorescent plate and to the digital camera instrument combination of visible light sensitivity, should be direct, the most visual a kind of best in quality, the cheapest method of obtaining the two-dimensional digital X light image of cost, this technology be subjected to researcher's great attention in recent years.Because advantages such as single-crystal semiconductor material has that technical maturity, cheap, the making that is fit to big detector array, long-term materials used are difficult for degenerating and the device operating rate of made is very fast, in the research of digital X-ray detector, be subjected to paying much attention to (consult Cisternino, A., et al., Physica Medica, Vol:13, p.214-17,1997).People such as Arfelli adopt silicon materials and end face to receive the device architecture of X-ray, the detector that receives X-ray with the general using material front or the back side is compared, the length that absorbs X-ray significantly increases under the situation that does not increase material thickness (thereby not increasing operating voltage), having remedied the general material shortcoming little to the X-ray absorption coefficient effectively, is that its quantum efficiency of X-ray of 20KeV reaches 80% to energy.But the device of people such as Arfelli report is the PIN photodiode structure, not gain, and sensitivity is lower; And the silicon materials that device adopts are thicker, and operating voltage is higher, and PN junction is exposed to the end face of easy damage, causes the leakage current of device significantly to increase and (consults Arfelli, et al., Nucl.Instr.﹠amp; Meth.in Phys.Res.A, Vol:377, p.508-13,1996).People such as Lynch have reported the x-ray detector that adopts silicon materials and avalanche photo diode (APD) structure, though this kind device architecture has gain, sensitivity is higher, but owing to adopt positive incident, the length that absorbs X-ray is little, this device can only be used for energy and (consult S.P Lynch less than the X-ray detection of 2KeV, et al., IEEE Trans.On Nucl.Science, Vol.44, p.581-586,1997).And APD has operating voltage higher, and the snowslide working point is wayward, the normal shortcoming that produces big noise.
The same photoelectric current to light signal generating with APD of phototransistor has amplification (consulting Y.Wang, et al., J.Appl.Phys., Vol.74, p.6978-6991,1993).Phototransistor is made of a semiconductor conducting layer and a semiconductor PN in its both sides that is called the base, is electrode outside PN junction.A PN junction is in the forward bias state during device work, and this PN junction is called emitter junction, and the another one PN junction is in and oppositely exhausts bias state, and this PN junction is called collector junction.If the resistivity of base is selected appropriate, phototransistor can be operated in the state that collector junction depletion region and emitter junction depletion region will or have been collided.This phototransistor generally is called the punch phototransistor.The punch phototransistor not only has the gain of bigger opto-electronic conversion, and noise less (consulting Y.Wang, et al., J.Appl.Phys., Vol.74, p.6978-6991,1993).
At the problems referred to above, the purpose of this invention is to provide a kind of good, cheap for manufacturing cost linear X-ray detector array of image quality of can the direct detection X light image, obtaining, and propose a kind of method of using this linear X-ray detector array to survey X-ray.
For achieving the above object, the present invention takes following technical scheme:
A kind of linear X-ray detector array with new structure is characterized in that: it is made up of a plurality of phototransistors of arranging by one dimension, and each phototransistor comprises base, emitter region, collector region, emitter junction, collector junction, natural cleavage plane; The outside of one of emitter region and collector region is shaped on independently electrode strip, and the outside in another district is shaped on public electrode; The natural cleavage plane of each phototransistor at grade.
The doping content of described base is greater than its intrinsic carrier concentration and less than 10
14Cm
-3
Described phototransistor is N
+-P
--N
+Or P
+-N
--P
+Basic structure, used semi-conducting material is＜100〉crystal orientation or＜110〉crystal orientation monocrystalline silicon,＜one of GaAs of 100〉crystal orientation, CdZnTe semiconductor single crystal material, the thickness of used semi-conducting material is 50-200 μ m, so that easy cleavage, forms smooth incident end face as the minute surface.
Described phototransistor is the punch phototransistor.
The direction of described electrode strip is vertical with natural cleavage plane.
With the contacted district of described electrode strip, for the material that substrate is silicon, be monocrystalline silicon, polysilicon or amorphous silicon, for the material that substrate is GaAs GaAs or gallium aluminium arsenic.
The method of using linear X-ray detector array with new structure of the present invention to survey X-ray is: with the natural cleavage plane of phototransistor as the end face that receives X-ray incident; Make the X-ray incident direction be parallel to the electrode strip of phototransistor and vertical with the crystal orientation of monocrystal material; On two electrodes of each phototransistor, apply operating voltage, make an one PN junction be in forward bias and another PN junction is in reverse bias; Take out photosignal from the electrode strip of each phototransistor.
Because the present invention adopts the punch phototransistor, thus not only there are bigger opto-electronic conversion gain, operating voltage low, and also noise is less.The cleavage because the semi-conducting material that the present invention adopts is thin, so it is little to be exposed to the damage of the PN junction on the cleaved facets, surface leakage and dark current are little.Because the present invention adopts end face to accept the structure of X-ray incident, absorb the path length of X-ray, so the energy range of quantum efficiency height, detectable X-ray is wide.Add with the fluorescent plate that adopts at present extensively the photoelectric array detector combination of visible light sensitivity is compared, high sensitivity, low noise advantage that the existing punch phototransistor of the present invention has have end face to accept the advantage of the high-quantum efficiency of X-ray incident structure again.Cooperative mechanical of the present invention scanning can obtain directly that the contrast characteristic is good, sensitivity and the high two-dimentional X light image of resolution.In addition, because the detectivity height of this detector array, the data reading circuit that matches with it is also simpler.
Specifically describe the present invention below in conjunction with embodiment:
Fig. 1 is a structural representation of the present invention.
Linear X-ray detector array with new structure of the present invention is made up of a plurality of phototransistors of arranging by one dimension on same chip.Figure 1 shows that into the photo-transistor arrays that delegation arranges, vertically one of them phototransistor is represented on the dotted line right side.Each phototransistor comprises P type base 1, N
+Type emitter region 2, N
+Type collector region 3, natural cleavage plane 4, base 1 forms emitter junction, collector junction respectively with emitter region 2, collector region 3 intersections, and the outside of emitter region 2 is shaped on independently electrode strip 5, and the outside of collector region 3 is shaped on public electrode 6.The natural cleavage plane 4 of each phototransistor at grade, each public electrode 6 is communicated with.
Device is made of＜100〉crystal orientation silicon materials, and phototransistor is N
+-P
--N
+Basic structure, the resistivity of base 1 is very high, and doping content is very low, and doping content is greater than its intrinsic carrier concentration and less than 10
14Cm
-3The thickness a of the used semi-conducting material of device is 50-200 μ m, so that easy cleavage, forms smooth incident end face as the minute surface.
Linear X-ray detector array with new structure of the present invention is used to survey X-ray, and its method is:
With the natural cleavage plane 4 of phototransistor as the end face that receives X-ray incident; Make the X-ray incident direction be parallel to the electrode strip 5 of phototransistor and vertical with the crystal orientation of monocrystal material; Between two electrodes 5,6 of each phototransistor, apply operating voltage, make emitter junction be in forward bias and collector junction is in reverse bias; Take out photosignal from the electrode strip 5 of each phototransistor.This photosignal be to the X-ray signal of incident base 1 survey and amplify after signal.
In the use, each phototransistor is as an X-ray receiving element, and the area of each X-ray receiving element is by the width decision of semi-conducting material thickness a and electrode strip 5.Linear X-ray detector array with new structure of the present invention is made probe, cooperate corresponding mechanical action, can obtain directly that the contrast characteristic is good, sensitivity and the high two-dimentional X light image of resolution.
In other embodiments of the invention:
Phototransistor can be operated in the state that collector junction depletion region and emitter junction depletion region will or have been collided, and promptly this phototransistor can be the punch phototransistor.
The direction of electrode strip is vertical with natural cleavage plane.
With electrode strip 5 contacted districts, for the material that substrate is silicon, can be polysilicon or amorphous silicon, for the material that substrate is GaAs, can be gallium aluminium arsenic, so that the photoelectric current gain that forms the broad stopband emitter junction, improves phototransistor.
Phototransistor is N preferably
+-P
--N
+Basic structure also can be P
+-N
--P
+Or the structure of other mutation form.P wherein
+And N
+Refer to the alms giver's heavily doped layer of being advocated peace respectively, its doping content is greater than 10
18Cm
-3P
-And N
-Refer to that respectively doping content is very low, less than 10
14Cm
-3Be subjected to main stor(e)y and donor layer.
The most handy silicon materials of device are made, and also can select other semiconductor single crystal materials such as GaAs or CdZnTe for use.To silicon materials can be＜100〉crystal orientation or＜110〉crystal orientation; To GaAs material preferably＜100〉crystal orientation.
Need to prove that the foregoing description is only for the unrestricted claim of the present invention of explanation the present invention, and is any based on equivalents technology of the present invention, all should be in scope of patent protection of the present invention.
Claims (10)
1. linear X-ray detector array with new structure is characterized in that:
It is made up of a plurality of phototransistors of arranging by one dimension, and each phototransistor comprises base, emitter region, collector region, emitter junction, collector junction, natural cleavage plane;
The outside of emitter region is shaped on independently electrode strip, and the outside of collector region is shaped on public electrode;
The natural cleavage plane of each phototransistor at grade.
2. linear X-ray detector array with new structure as claimed in claim 1 is characterized in that: the doping content of described base is greater than its intrinsic carrier concentration and less than 10
14Cm
-3
3. linear X-ray detector array with new structure as claimed in claim 1 is characterized in that: described phototransistor is N
+-P
--N
+Basic structure.
4. linear X-ray detector array with new structure as claimed in claim 1 is characterized in that: described phototransistor is P
+-N
--P
+Basic structure.
5. linear X-ray detector array with new structure as claimed in claim 1 is characterized in that: the used semi-conducting material of described phototransistor is＜100〉crystal orientation or＜110〉crystal orientation monocrystalline silicon,＜one of GaAs of 100〉crystal orientation, CdZnTe semiconductor single crystal material.
6. linear X-ray detector array with new structure as claimed in claim 1 is characterized in that: the thickness of the used semi-conducting material of described phototransistor is 50-200 μ m.
7. linear X-ray detector array with new structure as claimed in claim 1 is characterized in that: the direction of described electrode strip is vertical with natural cleavage plane.
8. linear X-ray detector array with new structure as claimed in claim 1 is characterized in that: described phototransistor is the punch phototransistor.
9. linear X-ray detector array with new structure as claimed in claim 1, it is characterized in that: with the contacted district of described electrode strip, being monocrystalline silicon, polysilicon or amorphous silicon for the material that substrate is silicon, is GaAs or gallium aluminium arsenic for the material that substrate is GaAs.
10. method of using the described linear X-ray detector array with new structure of claim 1 to survey X-ray is characterized in that:
With the natural cleavage plane of phototransistor as the end face that receives X-ray incident;
Make the X-ray incident direction be parallel to the electrode strip of phototransistor and vertical with the crystal orientation of monocrystal material;
On two electrodes of each phototransistor, apply operating voltage, make an one PN junction be in forward bias and another PN junction is in reverse bias;
Take out photosignal from the electrode strip of each phototransistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99122309 CN1095596C (en) | 1999-10-29 | 1999-10-29 | Linear X-ray detector array with new structure and its detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99122309 CN1095596C (en) | 1999-10-29 | 1999-10-29 | Linear X-ray detector array with new structure and its detection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1250230A CN1250230A (en) | 2000-04-12 |
| CN1095596C true CN1095596C (en) | 2002-12-04 |
Family
ID=5282432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99122309 Expired - Fee Related CN1095596C (en) | 1999-10-29 | 1999-10-29 | Linear X-ray detector array with new structure and its detection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1095596C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1293374C (en) * | 2002-04-17 | 2007-01-03 | 北京师范大学 | Novel structure photoelectric detector capable of measuring wave length and detecting method |
| CN101577284B (en) * | 2008-05-09 | 2011-04-13 | 同方威视技术股份有限公司 | Semiconductor detector for measuring radiation and imaging device |
| CN102820287A (en) * | 2012-08-03 | 2012-12-12 | 中国科学院上海技术物理研究所 | Solar battery with pn junction array light acceptance structure |
| CN107923987B (en) * | 2015-09-08 | 2020-05-15 | 深圳帧观德芯科技有限公司 | Method for producing an X-ray detector |
| CN106783904B (en) * | 2017-01-03 | 2019-07-05 | 京东方科技集团股份有限公司 | Photoelectricity testing part and photoelectric detection system |
| CN108346711B (en) * | 2018-02-08 | 2019-11-19 | 重庆邮电大学 | The manufacturing method of improved vertical structure photodetector |
| CN115706175B (en) * | 2021-08-09 | 2024-02-27 | 北京一径科技有限公司 | Photoelectric detection array, photoelectric detector and laser radar |
-
1999
- 1999-10-29 CN CN 99122309 patent/CN1095596C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1250230A (en) | 2000-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2950346A2 (en) | Semiconductor radiation detector with a modified internal gate structure | |
| CN1095596C (en) | Linear X-ray detector array with new structure and its detection method | |
| JP2004530864A5 (en) | ||
| Fang et al. | An amorphous SiC/Si heterojunction pin diode for low-noise and high-sensitivity UV detector | |
| US20070272872A1 (en) | X-ray detector with photodetector embedded in scintillator | |
| JPH07209431A (en) | X-ray detecting element and method of operation of device thereof | |
| WO1993021660A1 (en) | Low capacitance x-ray radiation detector | |
| Hohnke et al. | Epitaxial PbSe Schottky‐barrier diodes for infrared detection | |
| US20080258072A1 (en) | Detector for Ionizing Radiation | |
| CN110783355A (en) | Detection panel, manufacturing method thereof and detection device | |
| Levy et al. | Three-dimensional analytical simulation of self-and cross-responsivities of photovoltaic detector arrays | |
| Sudhaesanan et al. | Fabrication and characterization of CdZnTe radiation detectors with a new PIN design | |
| CN111599830B (en) | Charge injection device based on single-layer graphene/insulating layer/silicon/multilayer graphene structure | |
| Shrestha et al. | A perspective on the device physics of lead halide perovskite semiconducting detector for gamma and x-ray sensing | |
| JP2003168794A (en) | Radiant rays detecting element, radiant rays image pickup device, radiant rays detecting method and radiant rays image pickup method | |
| Musca et al. | Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays | |
| JP2003240861A (en) | Radiation detecting device, radiation imaging unit, and radiation detecting method | |
| Henry et al. | Solid state x-ray detectors for digital mammography | |
| Sandage et al. | Producing phototransistors in a standard digital CMOS technology | |
| EP0435509A2 (en) | Semiconductor photodetector and method of operation | |
| CN118398639B (en) | Photoelectric detection imaging array, imaging chip and imaging equipment | |
| Paulus et al. | Comparison of the beveled-edge and reach-through APD structures for PET applications | |
| RU2708553C1 (en) | Two-spectral photosensitive device | |
| CN214503419U (en) | CT detector module based on dark silicon detector module | |
| Dubecky et al. | Monolithic array of semi-insulating GaAs detectors: technology, performance and application in digital X-ray scanner |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |