CN109557685B - Terahertz wave photonic crystal device with response frequency band adjustable in real time and preparation method and application thereof - Google Patents
Terahertz wave photonic crystal device with response frequency band adjustable in real time and preparation method and application thereof Download PDFInfo
- Publication number
- CN109557685B CN109557685B CN201710883104.5A CN201710883104A CN109557685B CN 109557685 B CN109557685 B CN 109557685B CN 201710883104 A CN201710883104 A CN 201710883104A CN 109557685 B CN109557685 B CN 109557685B
- Authority
- CN
- China
- Prior art keywords
- photonic crystal
- crystal device
- terahertz wave
- terahertz
- frequency band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 54
- 230000004044 response Effects 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 15
- 239000000696 magnetic material Substances 0.000 claims abstract description 13
- 230000000737 periodic effect Effects 0.000 claims abstract description 11
- 230000008859 change Effects 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 230000035699 permeability Effects 0.000 claims abstract description 7
- 238000010146 3D printing Methods 0.000 claims abstract description 6
- 238000010521 absorption reaction Methods 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims abstract description 3
- 239000002131 composite material Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000002023 wood Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000013329 compounding Methods 0.000 claims description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 229910000859 α-Fe Inorganic materials 0.000 claims description 2
- 229910000863 Ferronickel Inorganic materials 0.000 claims 1
- 230000002195 synergetic effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- QMQXDJATSGGYDR-UHFFFAOYSA-N methylidyneiron Chemical compound [C].[Fe] QMQXDJATSGGYDR-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0063—Optical properties, e.g. absorption, reflection or birefringence
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0081—Electric or magnetic properties
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Hard Magnetic Materials (AREA)
Abstract
The invention discloses a terahertz wave photonic crystal device with a response frequency band adjustable in real time and a preparation method and application thereof, and belongs to the technical field of terahertz wave application and 3D printing. The photonic crystal stealth device has the advantages that the magnetic material with high permeability is combined with the flexible material, the photonic crystal three-dimensional array is realized through a mode-free direct-writing three-dimensional printing technology, the three-dimensional array with different geometric periodic structures and the powder material in the three-dimensional array can realize the absorption of terahertz waves in different frequency bands under the synergistic effect, the response of the magnetic material to an external magnetic field is utilized to further change the three-dimensional periodic structure of the photonic crystal stealth device, the photonic crystal device can be an adjustable optical window, the stealth and modulation of the terahertz waves in different frequency bands are realized, and meanwhile, the photonic crystal device can also be used as a detector to sense the change of an external magnetic field in a space.
Description
The technical field is as follows:
the invention relates to the field of terahertz wave application technology and 3D printing technology, in particular to a terahertz wave photonic crystal device with a response frequency band adjustable in real time and a preparation method and application thereof.
Background art:
photonic crystals refer to a class of materials designed to have a periodic structure in order to achieve a certain electromagnetic field response. In the electromagnetic wave stealth field, when electromagnetic waves are incident into a photonic crystal, a photonic forbidden band is caused due to a special space array structure of the photonic crystal, and in the photonic forbidden band, the photon state density disappears, so that the electromagnetic waves cannot be transmitted, and further stealth in the frequency band is realized.
Traditional stealth materials (including the existing stealth materials based on the photonic crystal theory), such as stealth coatings of stealth fighters, enable radar waves to be absorbed after being irradiated on the airplane through the appearance and geometric design of the airplane, reduce the reflection of the radar waves and realize stealth. However, the frequency band is mostly concentrated on the G Hz frequency band, the application of the frequency band is mature, the technical barrier disappears day by day, and the existing research shows that the technical competition in the field can be shifted from the G Hz field to the terahertz frequency band field in the future, which can cause the failure and elimination of the traditional stealth material. In addition, the existing stealth material has inherent defects of single working frequency band and nonadjustable working frequency band, is not beneficial to establishing a technical barrier, and develops the technology at present.
The invention content is as follows:
the invention aims to provide a terahertz wave photonic crystal device with a response frequency band capable of being adjusted in real time, and a preparation method and application thereof.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a terahertz wave photonic crystal device with a response frequency band capable of being adjusted in real time is formed by compounding a magnetic material with high magnetic conductivity and a flexible substrate material, and has a three-dimensional periodic structure; wherein: the content of the magnetic material with high magnetic permeability is 10-90 wt.%.
The magnetic material with high magnetic conductivity is iron powder, ferrite powder, ferric oxide powder, iron-containing compound powder, iron-cobalt powder, iron-nickel powder, iron-carbon powder or iron-cobalt powder; the flexible substrate material is organic silica gel. The three-dimensional periodic structure is a face-centered cubic structure.
The response frequency band of the terahertz wave photonic crystal device to terahertz waves can change along with the change of an external magnetic field.
The preparation method of the terahertz wave photonic crystal device with the response frequency band adjustable in real time comprises the following steps: firstly, uniformly mixing a magnetic material with high magnetic permeability and a flexible substrate material according to a required proportion to obtain a magnetic composite slurry; then the obtained magnetic composite slurry is printed into a three-dimensional periodic structure by a non-mold direct-writing three-dimensional printing forming technology; and finally, curing to obtain the terahertz wave photonic crystal device with the response frequency band adjustable in real time. The method specifically comprises the following steps:
(a) preparing magnetic composite slurry: adding a powder material with high magnetic conductivity into a flexible substrate material in proportion, and uniformly stirring to obtain a magnetic composite slurry, namely 3D printing ink; the content of the magnetic material with high magnetic permeability in the magnetic composite slurry is 10-90 wt.%;
(b) printing a three-dimensional periodic structure by a die-free direct-write molding technology: printing the magnetic composite slurry obtained in the step (a) according to a set three-dimensional array path of a wood pile structure, wherein the three-dimensional array space is of a face-centered cubic structure;
(c) curing and forming: and (c) curing and forming the printed three-dimensional array in the step (b), wherein the treatment temperature is 0-100 ℃, and the treatment time is 24-0.5 hour, so that the response frequency band real-time adjustable terahertz photonic crystal device is obtained.
The terahertz photonic crystal device can realize the absorption of a specific waveband under the action of terahertz waves, so that the waveband can be hidden.
The terahertz wave photonic crystal device is used as an adjustable optical window, and can realize the stealth and modulation of terahertz waves in different frequency bands by changing an external magnetic field.
The terahertz wave photonic crystal device is applied to a detector and can sense the change of an external magnetic field in a space where the device is located.
The invention has the following advantages and beneficial effects:
1. the terahertz photonic crystal device realizes the stealth and modulation of terahertz waves of different frequency bands by utilizing the interaction of high-permeability magnetic powder in a three-dimensional array and terahertz electromagnetic waves.
2. The terahertz photonic crystal device can realize the absorption of a specific waveband under the action of terahertz waves, so that the waveband can be hidden; when a magnetic field is applied to the terahertz wave photonic crystal device, the photonic crystal device can be regulated and controlled in a non-contact manner by utilizing the response of the magnetic material in the photonic crystal stealth device to the applied magnetic field, so that the response frequency of the photonic crystal device to terahertz waves is changed in real time, and the aim of modulating the terahertz waves is fulfilled.
3. The terahertz photonic crystal device can sense the change of an external magnetic field in real time, and converts a signal of the change of the magnetic field into a deformation signal to be output and fed back.
Description of the drawings:
FIG. 1 shows a terahertz time-domain spectroscopy system test of an adjustable terahertz wave photonic crystal device with dielectric rod diameters of 180 micrometers and dielectric rod spacing of 500 micrometers, a photonic band gap diagram is obtained after Fourier transform, and a modulation band gap diagram is obtained under the action of an external modulation magnetic field.
FIG. 2 shows a terahertz time-domain spectroscopy system test of an adjustable terahertz wave photonic crystal device with dielectric rods of 180 micrometers in diameter and dielectric rod spacing of 400 micrometers, a photonic band gap diagram is obtained after Fourier transform, and a modulation band gap diagram is obtained under the action of an external modulation magnetic field.
The specific implementation mode is as follows:
the present invention is further illustrated by the following specific examples.
Example 1:
the process for preparing the terahertz photonic crystal device in the embodiment is as follows:
step 1, adding 5g of iron powder into 5g of Dow Corning SE1700, and uniformly mixing to obtain the magnetic ink to be printed.
And 2, filling the ink into a printer charging barrel, setting the interval of the close-packed structure to be 500 micrometers and the layer height to be 150 micrometers, and printing the ink into a photonic crystal structure according to the three-dimensional wood-packed structure array.
And 3, heating and curing the printed photonic crystal three-dimensional array for 1 hour at 100 ℃.
And 4, carrying out terahertz spectrum test on the thermally-treated terahertz photonic crystal stealth device, and carrying out Fourier transform to obtain a photonic band gap, wherein the result is shown in figure 1 (without a magnetic field).
And 5, performing additional magnetic field modulation on the terahertz photonic crystal stealth device, simultaneously performing terahertz time-domain spectroscopy test, and performing Fourier transform to obtain a photonic band gap, wherein the result is displayed in a curve (magnetic field modulation) in fig. 1.
Example 2:
the process for preparing the terahertz photonic crystal device in the embodiment is as follows:
step 1, adding 5g of iron powder into 5g of Dow Corning SE1700, and uniformly mixing to obtain the magnetic ink to be printed.
And 2, filling the ink into a printer charging barrel, setting the interval of a close-packed structure to be 400 micrometers and the layer height to be 150 micrometers, and printing the ink into a photonic crystal structure according to a three-dimensional wood stack structure array.
And 3, heating and curing the printed photonic crystal three-dimensional array for 2 hours at 100 ℃.
And 4, carrying out terahertz spectrum test on the thermally-treated terahertz photonic crystal stealth device, and carrying out Fourier transform to obtain a photonic band gap, wherein the result is shown in figure 2 (without a magnetic field).
And 5, modulating the terahertz photonic crystal stealth device with an external magnetic field, simultaneously carrying out terahertz time-domain spectroscopy test, obtaining a photonic band gap through Fourier transform, and displaying the result in a curve (without the magnetic field) in FIG. 2.
The embodiments are only referred to, and the 3D printed terahertz photonic crystal cloaking device and the manufacturing method thereof similar to or extended from the present invention are within the protection scope of the present invention.
Claims (4)
1. A response frequency band real-time adjustable terahertz wave photonic crystal device is characterized in that: the terahertz wave photonic crystal device is formed by compounding a magnetic material with high magnetic conductivity and a flexible substrate material, and has a three-dimensional periodic structure, wherein the three-dimensional periodic structure is a face-centered cubic structure; wherein: the content of the magnetic material with high magnetic permeability is 10-90 wt.%;
the magnetic material with high magnetic conductivity is iron powder, ferrite powder, ferric oxide powder, ferronickel powder, ferrocarbon powder or iron cobalt powder; the flexible substrate material is organic silica gel;
the response of the terahertz wave photonic crystal device to terahertz waves can change along with the change of an external magnetic field;
the preparation method of the terahertz wave photonic crystal device with the response frequency band adjustable in real time comprises the following steps: firstly, uniformly mixing a magnetic material with high magnetic permeability and a flexible substrate material according to a required proportion to obtain a magnetic composite slurry; then printing the obtained magnetic composite slurry into a three-dimensional periodic structure by a die-free direct-writing forming technology; finally, the terahertz wave photonic crystal device with the response frequency band adjustable in real time is obtained after curing treatment; the method specifically comprises the following steps:
(a) preparing magnetic composite slurry: adding a powder material with high magnetic conductivity into a flexible substrate material in proportion, and uniformly stirring to obtain a magnetic composite slurry, namely 3D printing ink; the content of the magnetic material with high magnetic permeability in the magnetic composite slurry is 10-90 wt.%;
(b) printing a three-dimensional periodic structure by a die-free direct-write molding technology: printing the magnetic composite slurry obtained in the step (a) according to a set three-dimensional array path of a wood pile structure, wherein the three-dimensional array space is of a face-centered cubic structure;
(c) curing and forming: and (c) curing and forming the printed three-dimensional array in the step (b), wherein the treatment temperature is 0-100 ℃, and the treatment time is 24-0.5 hour, so that the response frequency band real-time adjustable terahertz photonic crystal device is obtained.
2. The application of the terahertz wave photonic crystal device with the response frequency band adjustable in real time according to claim 1 is characterized in that: the terahertz photonic crystal device can realize the absorption of a specific waveband under the action of terahertz waves, so that the waveband can be hidden.
3. The application of the terahertz wave photonic crystal device with the response frequency band adjustable in real time according to claim 1 is characterized in that: the terahertz wave photonic crystal device is used as an adjustable optical window, and can realize stealth and modulation of terahertz waves in different frequency bands by changing an external magnetic field.
4. The application of the terahertz wave photonic crystal device with the response frequency band adjustable in real time according to claim 1 is characterized in that: the terahertz wave photonic crystal device is applied to a detector and can sense the change of an external magnetic field in a space where the device is located.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710883104.5A CN109557685B (en) | 2017-09-26 | 2017-09-26 | Terahertz wave photonic crystal device with response frequency band adjustable in real time and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710883104.5A CN109557685B (en) | 2017-09-26 | 2017-09-26 | Terahertz wave photonic crystal device with response frequency band adjustable in real time and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109557685A CN109557685A (en) | 2019-04-02 |
| CN109557685B true CN109557685B (en) | 2020-11-27 |
Family
ID=65863224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710883104.5A Active CN109557685B (en) | 2017-09-26 | 2017-09-26 | Terahertz wave photonic crystal device with response frequency band adjustable in real time and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109557685B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102481799A (en) * | 2009-08-05 | 2012-05-30 | 纳诺布雷克株式会社 | Printing Medium, Printing Method, And Printing Apparatus Using Photonic Crystal Characteristic |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103064146A (en) * | 2012-11-09 | 2013-04-24 | 上海大学 | Manufacturing method of terahertz waveband photonic crystal |
| CN103802315B (en) * | 2013-12-31 | 2017-04-26 | 中国科学院深圳先进技术研究院 | Method for preparing photonic crystals through 3D (Three-Dimensional) printing |
-
2017
- 2017-09-26 CN CN201710883104.5A patent/CN109557685B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102481799A (en) * | 2009-08-05 | 2012-05-30 | 纳诺布雷克株式会社 | Printing Medium, Printing Method, And Printing Apparatus Using Photonic Crystal Characteristic |
Non-Patent Citations (2)
| Title |
|---|
| Direct Writing of Flexible Barium Titanate/Polydimethylsiloxane 3D Photonic Crystals with Mechanically Tunable Terahertz Properties;Pengfei Zhu et al;《Adv. Optical Mater.》;20170204;全文 * |
| Tailoring of the partial magnonic gap in three-dimensional magnetoferritin-based magnonic crystals;S. Mamica et al;《JOURNAL OF APPLIED PHYSICS》;20130726;第2-5章 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109557685A (en) | 2019-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zuo et al. | Multimaterial 3D-printing of graphene/Li0. 35Zn0. 3Fe2. 35O4 and graphene/carbonyl iron composites with superior microwave absorption properties and adjustable bandwidth | |
| Namai et al. | Synthesis of an electromagnetic wave absorber for high-speed wireless communication | |
| CN109762519B (en) | Preparation method of high-entropy alloy/oxide composite nano wave-absorbing material | |
| Cai et al. | Synthesis of Fe3O4/rGO@ PANI with three-dimensional flower-like nanostructure and microwave absorption properties | |
| Todkar et al. | Ce–Dy substituted barium hexaferrite nanoparticles with large coercivity for permanent magnet and microwave absorber application | |
| Panwar et al. | Recent advances in thin and broadband layered microwave absorbing and shielding structures for commercial and defense applications | |
| CN109037962A (en) | Double frequency graphene is adjustable Terahertz absorber | |
| Tang et al. | Fabrication and microwave absorption properties of carbon-coated cementite nanocapsules | |
| Zhao et al. | Preparation and enhanced microwave absorption properties of Ni microspheres coated with Sn6O4 (OH) 4 nanoshells | |
| Das et al. | Development of FeCoB/Graphene Oxide based microwave absorbing materials for X-Band region | |
| Zhou et al. | Realization of thin and broadband magnetic radar absorption materials with the help of resistor FSS | |
| CN105629462A (en) | Method for adopting metastructure surface to realize intermediate infrared invisibility | |
| CN109557685B (en) | Terahertz wave photonic crystal device with response frequency band adjustable in real time and preparation method and application thereof | |
| Sharbati et al. | Magnetic, microwave absorption and structural properties of Mg–Ti added Ca–M hexaferrite nanoparticles | |
| Tian et al. | Enhanced microwave absorption of Fe flakes with magnesium ferrite cladding | |
| Zhuang et al. | Boosted microwave absorbing performance of Ce2Fe17N3-δ@ SiO2 composite with broad bandwidth and low thickness | |
| Pasha et al. | High performance EMI shielding applications of Co0. 5Ni0. 5CexSmyFe2-x-yO4 nanocomposite thin films | |
| CN103402347B (en) | A kind of preparation method of the omnidirectional broadband electromagnetic wave energy absorption device based on three-dimensional metamaterial | |
| Yan et al. | Microwave absorption property of the diatomite coated by Fe-CoNiP films | |
| Wang et al. | Double‐Layer Structural Compatible Protective Material with Excellent Microwave Absorption and Heat Shielding Performance | |
| Kumar et al. | Single and double-layered Tri-band Microwave absorbing materials | |
| Lou et al. | Effect of heat treatment on the structure of M-Type BaFe 12 O 19 hollow ceramic microspheres prepared by self-reactive quenching technology and microwave absorption properties | |
| CN101210162B (en) | Semi-conductor adhesive and preparation method thereof | |
| US11404793B2 (en) | Magnetic nanostructures and composites for millimeter wave absorption | |
| CN113045304A (en) | Ferrite wave-absorbing material with mixed spinel structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |