CN109546857A - A kind of semiconductor transducer high-tension circuit - Google Patents
A kind of semiconductor transducer high-tension circuit Download PDFInfo
- Publication number
- CN109546857A CN109546857A CN201811619676.3A CN201811619676A CN109546857A CN 109546857 A CN109546857 A CN 109546857A CN 201811619676 A CN201811619676 A CN 201811619676A CN 109546857 A CN109546857 A CN 109546857A
- Authority
- CN
- China
- Prior art keywords
- capacitor
- circuit
- voltage
- transistor
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention proposes a kind of semiconductor transducer high-tension circuit, including DC pulse PMW module, self-lifting high-pressure circuit, voltage-multiplying circuit and electric resistance partial pressure feed circuit；The DC pulse PMW module, the voltage magnitude size and period for adjusting input power account for wide ratio, and the DC pulse PMW signal for generating a closed-loop control is exported to self-lifting high-pressure circuit；The self-lifting high-pressure circuit exports the DC pulse PMW signal modulation to voltage-multiplying circuit at self-lifting high-pressure signal；Voltage-multiplying circuit directly exports, another way inputs the electric resistance partial pressure feed circuit all the way for forming high-voltage signal after self-lifting high-pressure signal is amplified several times；The electric resistance partial pressure feed circuit carries out electric resistance partial pressure to high-voltage signal, exports feedback voltage and give DC pulse PMW module.The present invention can be powered by single lithium battery；Low in energy consumption, device power consumption is less than 5mW, exports electric current up to 1uA, meets the more pixel Si semiconductor transducer high voltage demands of large area.
Description
Technical field
The invention belongs to semiconductor detector technical fields, in particular to a kind of semiconductor transducer high-tension circuit.
Background technique
The miniaturization of the space explorations such as manned space station, manned moon landing and the realization active reading of Space Experiments mission requirements,
The space particle radiation monitoring spectrometer of low-power consumption and suit integrated design.The semiconductor transducer that Radiation monitoring spectrometer uses
The fully- depleted state for needing work to be formed in reverse-biased high pressure, semiconductor transducer high-tension circuit generally shakes electricity by direct current at present
Road, high-tension coil, output rectifier and filter and high-voltage feedback network composition, there are volumes it is big, quiescent dissipation is high the problems such as, nothing
Method meets the application demand of the card form nuclear radiation monitoring spectrometer of miniaturization, low-power consumption.
Summary of the invention
It is an object of the invention to solve the miniaturization of card form nuclear radiation monitoring spectrometer high-tension circuit, low power dissipation design is asked
Topic, to achieve the above object, the invention proposes a kind of semiconductor transducer high-tension circuits；The circuit includes DC pulse
PMW module, self-lifting high-pressure circuit, voltage-multiplying circuit and electric resistance partial pressure feed circuit；
The DC pulse PMW module, voltage magnitude size and period for adjusting input power account for wide ratio, and generate
The DC pulse PMW signal of one closed-loop control is exported to self-lifting high-pressure circuit；
The self-lifting high-pressure circuit, for exporting the DC pulse PMW signal modulation at self-lifting high-pressure signal to again
Volt circuit；
The voltage-multiplying circuit, for forming high-voltage signal after self-lifting high-pressure signal is amplified several times, directly output all the way,
Another way inputs the electric resistance partial pressure feed circuit；
The electric resistance partial pressure feed circuit exports feedback voltage and gives direct current arteries and veins for carrying out electric resistance partial pressure to high-voltage signal
Rush PMW module.
As a kind of improvement of described device, the self-lifting high-pressure circuit includes that self-lifting high-pressure circuit includes the first inductance
(L1), mosfet transistor (M1), first capacitor (C1), first diode (D1), second transistor (D2) and third capacitor
(C3)；
Described first inductance (L1) one end is connected with input power, the other end is connected to first capacitor (C1) and MOSFET is brilliant
Node between the output end of body pipe (M1)；
The grid of the mosfet transistor (M1) connects DC pulse PMW module, the source of the mosfet transistor (M1)
Grade ground connection；
The cathode of another termination first diode (D1) of the first capacitor (C1) and the anode of second transistor (D2)
Between node；
First diode (D1) plus earth；
Node of third capacitor one end (C3) connection first diode (D1) between anode and ground；Another termination second
The cathode of transistor (D2)；
When DC pulse PMW signal is high level, mosfet transistor (M1) conducting, the first inductance (L1) storage
Can, first capacitor (C1) is charged by the first transistor D1；
When DC pulse PMW signal is low level, mosfet transistor (M1) cut-off, the first inductance (L1) energy
Output, third capacitor (C3) are charged by the charge of first capacitor (C1) by second transistor (D2)；In third capacitor
(C3) self-lifting high-pressure signal is generated at the node between the cathode of second transistor (D2), is exported to the voltage-multiplying circuit of rear end.
As a kind of improvement of described device, the voltage-multiplying circuit includes the second capacitor (C2), third transistor (D3), the
Four capacitors (C4) and the 4th transistor (D4)；
Second capacitor (C2) end is connected to the node between the anode of second transistor (D2) and first capacitor (C1),
The other end connects the node between the cathode of third transistor (D3) and the anode of the 4th transistor (D4)；
4th capacitor (C4) one terminates the node between the anode and third capacitor (C3) of third transistor (D3), separately
Node between the cathode of one the 4th transistor (D4) of termination and the electric resistance partial pressure feed circuit of rear end；
When DC pulse PMW signal is high level, the second capacitor (C2) passes through under the self-lifting high-pressure signal function
Third transistor (D3) charges；
When DC pulse PMW signal low level, the 4th capacitor (C4) is brilliant by the 4th by the charge of the second capacitor (C2)
Body pipe (D4) charges；It is brilliant with the 4th in the 4th capacitor (C4) to which the self-lifting high-pressure signal is amplified several times
High-voltage signal is exported at node between the cathode of body pipe (D4), is directly exported all the way, and it is anti-that another way inputs the electric resistance partial pressure
Current feed circuit.
As a kind of improvement of described device, the electric resistance partial pressure feed circuit includes concatenated first resistor (R1) and
Two resistance (R2), node between the first resistor (R1) and second resistance (R2) and DC pulse PMW module with connect；Institute
Stating the feedback voltage that node is inputted to DC pulse PMW module is Vref:
Wherein, V0For the high-voltage signal of voltage-multiplying circuit output, r1For the resistance value of first resistor (R1), r2For second resistance
(R2) resistance value.
Present invention has an advantage that
1, semiconductor transducer high-tension circuit small volume of the invention, about 16mm*22mm*5mm, internal wireless circle are adopted
It is formed with switching power source chip and voltage-multiplying circuit and feedback network；
2, semiconductor transducer high-tension circuit of the invention is suitable for portable device, can be powered by single lithium battery；
3, semiconductor transducer high-tension circuit of the invention is low in energy consumption, and device power consumption is less than 5mW, output electric current up to 1uA,
Meet the more pixel Si semiconductor transducer high voltage demands of large area；
4, semiconductor transducer high-tension circuit output voltage range of the invention is adjustable, meets 100um-2mm thickness Si and partly leads
Body sensor high voltage demands；
5, semiconductor transducer high-tension circuit functions of modules of the invention is independent, will not make when integrated with other circuit modules
At crosstalk.
Detailed description of the invention
Semiconductor transducer high-tension circuit structural schematic diagram Fig. 1 of the invention；
Semiconductor transducer high-tension circuit Fig. 2 of the invention encapsulates sample.
Attached drawing mark
C1, first capacitor C2, the second capacitor C3, third capacitor
C4, the 4th capacitor D1, first diode D2, the second diode
D3, third diode D4, the 4th diode R1, first resistor
R2, second resistance M1, mosfet transistor L1, the first inductance
Specific embodiment
The present invention will be described in detail in the following with reference to the drawings and specific embodiments.
Semiconductor transducer high-tension circuit internal wireless circle of the invention, using DC pulse PMW module, voltage-multiplying circuit and
Feedback network composition, therefore small volume, about 16mm*22mm*5mm；Suitable for portable device, can be supplied by single lithium battery
Electricity；
The present invention makes module work by resistance-feedback network by the PMW chip of the low static working current (< 1mA) of selection
Make to improve power supply conversion efficiency in closed loop feedback state；Realize low in energy consumption, device power consumption is less than 5mW, output electric current up to 1uA,
Meet the more pixel Si semiconductor transducer high voltage demands of large area；
The present invention realizes that output voltage range is adjustable by resistance-feedback network, meets 100um-2mm thickness Si semiconductor biography
Sensor high voltage demands；
High-pressure modular of the present invention miniaturization is related to be encapsulated in miniaturization metal-back, due to metal-back shielding action,
It reduces to other analog circuit signal interferences；To realize independent functions of modules, and it is integrated with other circuit modules when not
It will cause crosstalk.
As shown in Figure 1, semiconductor transducer high-tension circuit of the invention includes DC pulse PMW module, self-lifting high-pressure electricity
Road, voltage-multiplying circuit and electric resistance partial pressure feed circuit.
Self-lifting high-pressure circuit is made of mosfet transistor M1, the first inductance L1, first capacitor C1 and first diode D1；
Voltage-multiplying circuit is by the second capacitor C2, second transistor D2, third capacitor C3, third transistor D3, the 4th capacitor C4
It is formed with the 4th transistor D4；
Electric resistance partial pressure feed circuit is made of first resistor R1 and second resistance R2.
Semiconductor transducer high-tension circuit of the present invention provides voltage input, input voltage range by stablizing constant voltage source
1.8V-6V can be powered by single lithium battery, be suitable for portable device.
The voltage input DC pulse PMW module that the stable constant voltage source is provided, adjusts the amplitude size of output, turns
It is changed to the output of DC pulse PMW signal, PMW signal is DC pulse signal.
The DC pulse PMW chip model includes the DC pulse PMW module with feedback monitoring such as UC1825.The part
Function is to be inputted by the error amplifier and control circuit of DC pulse PMW chip interior according to electric resistance partial pressure feed circuit,
Generate the DC pulse PMW signal output an of closed-loop control.
The DC pulse PWM module output period accounts for wide ratio, and signal controls mosfet transistor M1, mosfet transistor
A self-lifting high-pressure circuit is constituted with the first inductance L1, first capacitor C1, the first transistor D1；
When DC pulse PMW signal high level control MOSFET conducting when, the first inductance L1 energy storage, the first inductance L1 and
Mosfet transistor M1 output end level is low level；First capacitor C1 is charged by the first transistor D1；As DC pulse PMW
When signal low level control mosfet transistor M1 ends, the output of the first inductance L1 energy is connected in L1 with mosfet transistor M1
End generates high pressure, and high pressure raises first capacitor C1 level, and first capacitor C1 charge gives third capacitor by second transistor D2
C3 charges；Above-mentioned behavior is repeated when PMW signal height-low level alternating, realizes high pressure bootstrapping function, while driving rear end
Voltage-multiplying circuit generates High voltage output.
The self-lifting high-pressure circuit output drive voltage signal to voltage-multiplying circuit, the voltage-multiplying circuit can modulate PMW
The drive voltage signal be amplified to required high pressure amplitude, by adjusting the series connection number of voltage-multiplying circuit, height may be implemented
The output of signal is pressed, input voltage range 1.8-6V, output high-voltage signal range 12V-350V is adjustable, exports electric current up to 1uA.
Miniature low-power consumption semiconductor sensor of the invention realizes that High voltage output is accurately controlled by electric resistance partial pressure feed circuit
System.The electric resistance partial pressure feed circuit includes concatenated first resistor (R1) and second resistance (R2), the first resistor (R1)
Node between second resistance (R2) and DC pulse PMW module with connect；The node is inputted to DC pulse PMW module
Feedback voltage be Vref:
Wherein, V0For the high-voltage signal of voltage-multiplying circuit output, r1For the resistance value of first resistor (R1), r2For second resistance
(R2) resistance value.
Fig. 2 is the encapsulation sample of high-tension circuit, and for circuit package having a size of 22mm*16mm*5mm, module pin includes: input
Power supply, and output high pressure, wherein output high pressure pin can be 1 or multiple.
By emulation and experimental verification, the present invention can be realized the function by low voltage transition for high voltage, and voltage is adjusted
Range meets the application demand of the detectors high-tension circuit such as semiconductor detector, silicon photo diode, SiPM.
It should be noted last that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting.Although ginseng
It is described the invention in detail according to embodiment, those skilled in the art should understand that, to technical side of the invention
Case is modified or replaced equivalently, and without departure from the spirit and scope of technical solution of the present invention, should all be covered in the present invention
Scope of the claims in.
Claims (4)
1. a kind of semiconductor transducer high-tension circuit, which is characterized in that the circuit includes DC pulse PMW module, is elevated certainly
Volt circuit, voltage-multiplying circuit and electric resistance partial pressure feed circuit；
The DC pulse PMW module, voltage magnitude size and period for adjusting input power account for wide ratio, and generate one
The DC pulse PMW signal of closed-loop control is exported to self-lifting high-pressure circuit；
The self-lifting high-pressure circuit, for exporting the DC pulse PMW signal modulation at self-lifting high-pressure signal to piezoelectricity again
Road；
The voltage-multiplying circuit, for forming high-voltage signal after self-lifting high-pressure signal is amplified several times, directly output, another all the way
Road inputs the electric resistance partial pressure feed circuit；
The electric resistance partial pressure feed circuit exports feedback voltage and gives DC pulse PMW for carrying out electric resistance partial pressure to high-voltage signal
Module.
2. semiconductor transducer high-tension circuit according to claim 1, which is characterized in that the self-lifting high-pressure circuit includes
Self-lifting high-pressure circuit includes the first inductance (L1), mosfet transistor (M1), first capacitor (C1), first diode (D1), the
Two-transistor (D2) and third capacitor (C3)；
Described first inductance (L1) one end is connected with input power, the other end is connected to first capacitor (C1) and mosfet transistor
(M1) the node between output end；
The grid of the mosfet transistor (M1) connects DC pulse PMW module, and the source level of the mosfet transistor (M1) connects
Ground；
Between the cathode of another termination first diode (D1) and the anode of second transistor (D2) of the first capacitor (C1)
Node；
First diode (D1) plus earth；
Node of third capacitor one end (C3) connection first diode (D1) between anode and ground；The second crystal of another termination
Manage the cathode of (D2)；
When DC pulse PMW signal is high level, mosfet transistor (M1) conducting, the first inductance (L1) energy storage, the
One capacitor (C1) is charged by the first transistor D1；
When DC pulse PMW signal is low level, the mosfet transistor (M1) is ended, and the first inductance (L1) energy is defeated
Out, third capacitor (C3) is charged by the charge of first capacitor (C1) by second transistor (D2)；At third capacitor (C3)
Self-lifting high-pressure signal is generated at node between the cathode of second transistor (D2), is exported to the voltage-multiplying circuit of rear end.
3. semiconductor transducer high-tension circuit according to claim 2, which is characterized in that the voltage-multiplying circuit includes second
Capacitor (C2), third transistor (D3), the 4th capacitor (C4) and the 4th transistor (D4)；
Second capacitor (C2) end is connected to the node between the anode of second transistor (D2) and first capacitor (C1), another
Node between the cathode of end connection third transistor (D3) and the anode of the 4th transistor (D4)；
4th capacitor (C4) one terminates the node between the anode and third capacitor (C3) of third transistor (D3), the other end
Connect the node between the cathode of the 4th transistor (D4) and the electric resistance partial pressure feed circuit of rear end；
When DC pulse PMW signal is high level, the second capacitor (C2) passes through third under the self-lifting high-pressure signal function
Transistor (D3) charges；
When DC pulse PMW signal low level, the 4th capacitor (C4) passes through the 4th transistor by the charge of the second capacitor (C2)
(D4) it charges；To which the self-lifting high-pressure signal is amplified several times, in the 4th capacitor (C4) and the 4th transistor
(D4) high-voltage signal is exported at the node between cathode, is directly exported all the way, and another way inputs the electric resistance partial pressure feedback electricity
Road.
4. semiconductor transducer high-tension circuit according to claim 3, which is characterized in that the electric resistance partial pressure feed circuit
Node including concatenated first resistor (R1) and second resistance (R2), between the first resistor (R1) and second resistance (R2)
With DC pulse PMW module with connect；The feedback voltage that the node is inputted to DC pulse PMW module is Vref:
Wherein, V0For the high-voltage signal of voltage-multiplying circuit output, r1For the resistance value of first resistor (R1), r2For second resistance (R2)
Resistance value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811619676.3A CN109546857A (en) | 2018-12-28 | 2018-12-28 | A kind of semiconductor transducer high-tension circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811619676.3A CN109546857A (en) | 2018-12-28 | 2018-12-28 | A kind of semiconductor transducer high-tension circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109546857A true CN109546857A (en) | 2019-03-29 |
Family
ID=65857426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811619676.3A Pending CN109546857A (en) | 2018-12-28 | 2018-12-28 | A kind of semiconductor transducer high-tension circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109546857A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103155703A (en) * | 2010-09-29 | 2013-06-12 | 欧司朗股份有限公司 | Circuit arrangement for operating at least two semiconductor light sources |
| CN203574540U (en) * | 2013-11-29 | 2014-04-30 | 青岛歌尔声学科技有限公司 | Direct current voltage boosting circuit and electronic device |
-
2018
- 2018-12-28 CN CN201811619676.3A patent/CN109546857A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103155703A (en) * | 2010-09-29 | 2013-06-12 | 欧司朗股份有限公司 | Circuit arrangement for operating at least two semiconductor light sources |
| CN203574540U (en) * | 2013-11-29 | 2014-04-30 | 青岛歌尔声学科技有限公司 | Direct current voltage boosting circuit and electronic device |
Non-Patent Citations (1)
| Title |
|---|
| 乔双、张洋、张纯红: "一种基于ＢＯＯＳＴ电路的高压发生器研究", 《东北师大学报（自然科学版）》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102082512A (en) | Driver for piezoelectric actuator | |
| CN102255526B (en) | AC-DC power supply conversion chip and power switching circuit | |
| KR20010031663A (en) | Method of power supply for electronic systems and device therefor | |
| CN105162357A (en) | Energy-harvesting-circuit-based piezoelectric-electromagnetic composite energy harvesting device | |
| CN203813661U (en) | Primary control flyback switch power supply control chip and output line voltage compensating circuit | |
| CN103219893A (en) | Switch power supply controller and switch power supply circuit | |
| CN105656307A (en) | Charge pump circuit and grid turn-on voltage generating circuit | |
| CN104333239B (en) | A kind of fully integrated AC DC transducer of high efficiency | |
| CN105703611A (en) | Voltage feedback circuit of flyback switching power supply and flyback switching power supply | |
| CN101582639B (en) | Switch power supply circuit | |
| CN103618452A (en) | Capacity multiplier for internal frequency compensation of switching type voltage stabilizing integrated circuit | |
| CN109546857A (en) | A kind of semiconductor transducer high-tension circuit | |
| CN202178706U (en) | AC-DC power conversion chip and power conversion circuit | |
| CN102075093B (en) | Automatic high-precision voltage-stabilizing output circuit with wide-range input voltage in wide range | |
| CN209043959U (en) | A kind of isolation circuit of voltage sensor | |
| CN104052268A (en) | DC voltage conversion circuit | |
| CN201247906Y (en) | DC drive circuit structure for high-power laser | |
| CN203233312U (en) | Switch power supply controller and switch power supply device | |
| CN206180830U (en) | Pulse frequency regulation control circuit based on current mirror modulation | |
| CN203660879U (en) | Constant current/constant voltage converter based on PWM modulation | |
| CN107770909A (en) | Linear constant current electric light drive circuit, integrated circuit and control system | |
| CN106160528A (en) | A kind of Switching Power Supply | |
| CN101733215A (en) | Electrostatic atomizer | |
| CN110098739A (en) | A kind of DC-DC decompression converting circuit based on on-chip inductors | |
| CN206196098U (en) | Constant current led drive circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190329 |
|
| RJ01 | Rejection of invention patent application after publication |