CN109535469A - A kind of preparation method of conductive film - Google Patents
A kind of preparation method of conductive film Download PDFInfo
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- CN109535469A CN109535469A CN201811354113.6A CN201811354113A CN109535469A CN 109535469 A CN109535469 A CN 109535469A CN 201811354113 A CN201811354113 A CN 201811354113A CN 109535469 A CN109535469 A CN 109535469A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/0427—Coating with only one layer of a composition containing a polymer binder
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2471/00—Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
- C08J2471/02—Polyalkylene oxides
Abstract
The invention discloses a kind of preparation methods of conductive film, the preparation method is the following steps are included: selecting Upilex R type Kapton of the Tm not less than 280 DEG C is substrate, respectively with ethyl alcohol, ammonium hydroxide/hydrogen peroxide wetting surface and nitrogen drying, coating sol system on the surface of the substrate, when room temperature, microwave, depressurizing lower temperature-control pressure-control control；ITO conductive layer with a thickness of 80~100nm, sol system include mass ratio be the commercially available ITO nanometer powder in 1:0.05~0.08:0.02~0.03:0.005~0.0075:0.8~1.0:4~5, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer, F68 type poloxamer, isopropyl alcohol and water；Have the advantages that improve flexible.
Description
Technical field
The present invention relates to a kind of preparation methods of conductive film.
Background technique
Oxide has ultralow-conductivity, it is necessary to using doping, the manufacture techniques such as Lacking oxygen and interstitial atom, lead transparent
Defect is introduced in conductive film, the energy level in such forbidden band will introduce defect, to improve the electric conductivity of film.Wherein, with
Tin indium oxide (ITO), which is that the transparent conductive material of representative is own, rules more than 60 years of market, and scientist team prepares ITO and to trace back to
19 century 70s, conductivity principle are, in semiconductor In2O3Middle doping SnO2, a conductive electronics is generated, thus
In2O3Oxygen defect is introduced in lattice, Lacking oxygen can produce 2 conduction electrons, so that while ITO obtains superior electrical conductivity
But also with the characteristic of light transmission.
Currently, the transparent conductive film material overwhelming majority that can be bought in the market is ITO.According to statistics, 2013
Up to 1,600,000,000 dollars, ITO's transparent electrode total market in the whole world is come out top with 93% market share.Why ITO can account for
According to the dominant position of transparent electrode material, due to it is up to 90% or more, mist degree down to 0.5% to visible light transmittance, with
This can keep lower sheet resistance (80 ohm of <) and sheet resistance inhomogeneity (< 10%) again simultaneously.With the hair of flexible device of new generation
Exhibition, it is desirable that transparent electrode arbitrarily radius of curvature can bend, distort, and ito transparent electrode is during bending and distortion
It is easy failure, limits it in the application in flexible device field.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of conductive film, have the advantages that improve flexible.
Above-mentioned technical purpose of the invention has the technical scheme that
A kind of preparation method of conductive film, comprising the following steps:
(1) select Upilex R type Kapton of the glass transition temperature not less than 280 DEG C as substrate, in base
The surface at bottom 15~20min of ethanol wet, purity nitrogen drying is spare, soaks 5~10min of surface with ammonium hydroxide/hydrogen peroxide, purity nitrogen is blown
It does spare；
(2) sol system coating is carried out to surface processed in substrate, ITO conductive layer is obtained in substrate；It is described molten
Colloid system includes commercially available ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer, F68 type pool Lip river sand
Nurse, isopropyl alcohol and water, commercially available ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer in sol system
Object, F68 type poloxamer, isopropyl alcohol and water mass ratio be 1:0.05~0.08:0.02~0.03:0.005~0.0075:
0.8~1.0:4~5；
(2) product for obtaining step (2) places 18~22min at 20~30 DEG C, and it is dry to be transferred to 58~61 DEG C of microwave
Dry 58~62min, then be transferred to 160~170 DEG C be dried under reduced pressure 12~16min to get；Microwave drying is in a standard atmospheric pressure
Under；The vacuum degree being dried under reduced pressure is -0.08~-0.10；The ITO conductive layer with a thickness of 80~100nm.
By adopting the above technical scheme, using ethyl alcohol and ammonium hydroxide/hydrogen peroxide to the surface of Upilex R type Kapton
It is handled, improves the smoothness and hydrophily on its surface, be conducive to the connection on its surface Yu other molecules, be coated on it molten
Colloid system utilizes the Van der Waals force and P123 between P123 type PEO-PPO-PEO triblock copolymer and ITO nanometer powder
Type PEO-PPO-PEO triblock copolymer sinks commercially available ITO nanometer powder in the self assembly behavior on Kapton surface
Product re-dry behind Kapton surface, deposition obtains Kapton and the strong conduction of ITO nanometer powder binding force
Film improves the flexibility of conductive film using the flexibility of Kapton.
In the sol system of the application, ITO nanometer powder is insoluble in water, using triethanolamine and isopropanol to ITO
The wetting on nanometer powder surface, solubility of the Lai Tigao ITO nanometer powder in isopropanol water solution；In sol system,
There are Van der Waals force, P123 type PEO-PPO-PEO tri- between P123 type PEO-PPO-PEO triblock copolymer and ITO nanometer powder
Block copolymer wraps up ITO nanometer powder, under rule of similarity, different P123 type PEO-PPO-PEO triblock copolymers
It is mutually exclusive, so that the ITO nano powder dispersion being wrapped in different P123 type PEO-PPO-PEO triblock copolymers be opened
Come, reduces the electrostatic attraction between ITO nanometer powder；In sol system, F68 type poloxamer is adsorbed on ITO nano powder
Last surface can form sky by the ITO nanometer powder that F68 type poloxamer adsorbs since F68 type poloxamer structure is larger
Between steric hindrance, increase the distance between ITO nanometer powder, weaken its Van der Waals force, and then hinder intergranular reunion；
It is uniformly dispersed using the sol system of the application and relatively stable, is conducive to it and is attached on the surface of Kapton.
In drying process, successively room temperature, microwave and vacuum drying: initial mild air drying, the solvent in system are waved
Hair slowly, is conducive to the orderly deposition of commercially available ITO nano powder；Intermediate microwave drying is reduced the case where guaranteeing drying effect
Influence of the high temperature to film performance, and it is mild but effective dry；Finally solvent and portion are eliminated using high-temperature pressure-reduction drying
Divide low-boiling point material, to reduce influence of the impurity to performances such as the conductions of conductive film.
Further preferably are as follows: the sol system is prepared by the following method: water and isopropanol is added, opens mechanical stirring
And adjust the speed to 400~600r/min, it is husky that triethanolamine, P123 type PEO-PPO-PEO triblock copolymer and F68 type pool Lip river is added
Nurse；It is warming up to 53~57 DEG C and is gradually added into commercially available ITO nanometer powder under heat-retaining condition, be dispersed with stirring uniformly, with 7~10
DEG C/rate of h is down to 20~30 DEG C.
By adopting the above technical scheme, it being prepared at 53~57 DEG C, temperature is excessively high, promote the reunion between ITO nanometer powder,
Temperature is too low, is unfavorable for dispersing；Cooled down with the rate of 7~10 DEG C/h, it is easy to reunite between the too fast then powder of rate, it then consumes slowly excessively
Energy.
Further preferably are as follows: the sol system further includes vegetable oil and sodium chloride；In the sol system, the city
Sell ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer, F68 type poloxamer, isopropanol, water,
The mass ratio of vegetable oil and sodium chloride is 1:0.05~0.08:0.02~0.03:0.005~0.0075:0.8~1.0:4~5:
0.005~0.008:0.001~0.002.
By adopting the above technical scheme, P123 type PEO-PPO-PEO triblock copolymer is influenced by vegetable oil and sodium chloride
The self assembly behavior of object, the stability and/or ITO nanometer powder of Lai Tigao sol system are deposited between Kapton
Stability.
Further preferably are as follows: the sol system further includes oligosaccharide；In sol system, commercially available ITO nanometer powder, three
Ethanol amine, P123 type PEO-PPO-PEO triblock copolymer, F68 type poloxamer, isopropanol, water, vegetable oil, sodium chloride and
The mass ratio of oligosaccharide be 1:0.05~0.08:0.02~0.03:0.005~0.0075:0.8~1.0:4~5:0.005~
0.008:0.001~0.002:0.008~0.012.
By adopting the above technical scheme, using the hydrophily of oligosaccharide come with P123 type PEO-PPO-PEO triblock copolymer
And/or the connection of F68 type poloxamer, it is connected using the oligosaccharides of oligosaccharide with Kapton, it can will be with P123 type PEO-
PPO-PEO triblock copolymer and/or the ITO nanometer powder of F68 type poloxamer effect are pulled on Kapton, are mentioned
High disposal rate removes oligosaccharide using later period drying process after ITO nanometer powder and Kapton effect,
Reduce influence of the oligosaccharide to electric conductivity.
In conclusion the invention has the following advantages:
The surface of Upilex R type Kapton is handled using ethyl alcohol and ammonium hydroxide/hydrogen peroxide, improves its table
The smoothness and hydrophily in face, are conducive to the connection on its surface Yu other molecules, on it coating sol system, utilize P123 type
Van der Waals force and P123 type PEO-PPO-PEO tri- between PEO-PPO-PEO triblock copolymer and ITO nanometer powder is embedding
Section copolymer makes ITO nanometer powder be deposited on Kapton surface in the self assembly behavior on Kapton surface, does
It is dry to obtain Kapton and the strong conductive film of ITO nanometer powder binding force, changed using the flexibility of Kapton
The flexibility of kind conductive film.
Specific embodiment
This specific embodiment is only explanation of the invention, is not limitation of the present invention, those skilled in the art
Member can according to need the modification that not creative contribution is made to the present embodiment after reading this specification, but as long as at this
All by the protection of Patent Law in the protection scope of invention.In embodiment, the purpose for being gradually added into commercially available ITO nanometer powder is main
It is to help disperse, only need to observe system does not occur apparent caking phenomenon during being dispersed with stirring, and is art technology
Personnel's conventional means, is not specifically limited, and directly can also all be added but need to extend jitter time.
Embodiment 1a: a kind of sol system is prepared by the following method: water and isopropanol is added, opens mechanical stirring
And adjust the speed to 600r/min, add triethanolamine, P123 type PEO-PPO-PEO triblock copolymer, F68 type poloxamer, plant
Oil, sodium chloride and oligosaccharide；It is warming up to 57 DEG C and gradually adds commercially available ITO nanometer powder under heat-retaining condition, be dispersed with stirring uniformly,
With the rate of 7 DEG C/h be down to 30 DEG C to get；
In sol system, commercially available ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer,
F68 type poloxamer, isopropanol, water, vegetable oil, sodium chloride and oligosaccharide mass ratio be 1:0.05:0.02:0.005:0.8:
4:0.005:0.001:0.008；
The sol system testing graininess, D10 105nm, D50 112nm, D90 116nm；
The sol system is placed on 25 DEG C/60%RH lower 5/10 day and does not find lamination.
Embodiment 1b: a kind of sol system is prepared by the following method: water and isopropanol is added, opens mechanical stirring
And adjust the speed to 500r/min, triethanolamine is added, P123 type PEO-PPO-PEO triblock copolymer, F68 type poloxamer, plants
Object oil, sodium chloride and oligosaccharide；It is warming up to 55 DEG C and gradually adds commercially available ITO nanometer powder under heat-retaining condition, be dispersed with stirring
It is even, with the rate of 8 DEG C/h be down to 25 DEG C to get；
In sol system, commercially available ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer,
F68 type poloxamer, isopropanol, water, vegetable oil, sodium chloride and oligosaccharide mass ratio be 1:0.06:0.025:0.006:
0.9:4.5:0.007:0.0015:0.010；
The sol system testing graininess, D10 109nm, D50 115nm, D90 122nm；
The sol system is placed on 25 DEG C/60%RH lower 5/10 day and does not find lamination.
Embodiment 1c: a kind of sol system is prepared by the following method: water and isopropanol is added, opens mechanical stirring
And adjust the speed to 400r/min, add triethanolamine, P123 type PEO-PPO-PEO triblock copolymer, F68 type poloxamer, plant
Oil, sodium chloride and oligosaccharide；It is warming up to 53 DEG C and gradually adds commercially available ITO nanometer powder under heat-retaining condition, be dispersed with stirring uniformly,
With the rate of 10 DEG C/h be down to 20 DEG C to get；
In sol system, commercially available ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer,
F68 type poloxamer, isopropanol, water, vegetable oil, sodium chloride and oligosaccharide mass ratio be 1:0.08:0.03:0.0075:
1.0:5:0.008:0.002:0.012；
The sol system testing graininess, D10 110nm, D50 118nm, D90 124nm；
The sol system is placed on 25 DEG C/60%RH lower 5/10 day and does not find lamination.
Embodiment 1d: a kind of sol system, the difference with embodiment 1b is, is not added with oligosaccharide；
The sol system is placed on 25 DEG C/60%RH lower 5/10 day and does not find lamination.
Embodiment 1e: a kind of sol system, the difference with embodiment 1b be, is not added with vegetable oil, sodium chloride and oligomeric
Sugar；
The sol system is placed on 25 DEG C/60%RH lower 5 days and does not find lamination, continue to place 5 days then discovery have point
Layer.
Embodiment 2a: a kind of conductive film is obtained by following preparation method:
(1) selecting Upilex R type Kapton (is 98.2% in the average transmittance of visible region, vitrifying turns
Temperature is 282 DEG C) it is used as substrate, in the surface of substrate ethanol wet 18min, purity nitrogen drying is spare, with ammonium hydroxide/hydrogen peroxide
Surface 8min is soaked, purity nitrogen drying is spare；
(2) sol system (selecting embodiment 1a) coating is carried out to surface processed in substrate, ITO is obtained in substrate
Conductive layer；
(3) product for obtaining step (2), places 20min at 25 DEG C, is transferred to 60 DEG C of microwave drying 60min, then turns
Enter 164 DEG C be dried under reduced pressure 15min to get；Microwave drying is depressed in a normal atmosphere；The vacuum degree being dried under reduced pressure be-
0.09；ITO conductive layer with a thickness of 90nm.
Embodiment 2b: a kind of conductive film, the difference is that, sol system selects embodiment 1b with embodiment 2a.
Embodiment 2c: a kind of conductive film, the difference is that, sol system selects embodiment 1c with embodiment 2a.
Embodiment 2d: a kind of conductive film, the difference is that, sol system selects embodiment 1d with embodiment 2a.
Embodiment 2e: a kind of conductive film, the difference is that, sol system selects embodiment 1e with embodiment 2a.
Embodiment 3: a kind of conductive film is obtained by following preparation method:
(1) selecting Upilex R type Kapton (is 98.2% in the average transmittance of visible region, vitrifying turns
Temperature is 282 DEG C) it is used as substrate, in the surface of substrate ethanol wet 15min, purity nitrogen drying is spare, with ammonium hydroxide/hydrogen peroxide
Surface 5min is soaked, purity nitrogen drying is spare；
(2) sol system (selecting embodiment 1a) coating is carried out to surface processed in substrate, ITO is obtained in substrate
Conductive layer；
(2) product for obtaining step (2), places 22min at 20 DEG C, is transferred to 58 DEG C of microwave drying 62min, then turns
Enter 160 DEG C be dried under reduced pressure 16min to get；Microwave drying is depressed in a normal atmosphere；The vacuum degree being dried under reduced pressure be-
0.08；ITO conductive layer with a thickness of 100nm.
Embodiment 4: a kind of conductive film is obtained by following preparation method:
(1) selecting Upilex R type Kapton (is 98.2% in the average transmittance of visible region, vitrifying turns
Temperature is 282 DEG C) it is used as substrate, in the surface of substrate ethanol wet 20min, purity nitrogen drying is spare, with ammonium hydroxide/hydrogen peroxide
Surface 10min is soaked, purity nitrogen drying is spare；
(2) sol system (selecting embodiment 1a) coating is carried out to surface processed in substrate, ITO is obtained in substrate
Conductive layer；
(3) product for obtaining step (2), places 18min at 30 DEG C, is transferred to 61 DEG C of microwave drying 58min, then turns
Enter 170 DEG C be dried under reduced pressure 12min to get；Microwave drying is depressed in a normal atmosphere；The vacuum degree being dried under reduced pressure be-
0.10；ITO conductive layer with a thickness of 80nm.
Comparative example 1: the difference of a kind of mixed system and embodiment 1a is, does not use triethanolamine and isopropanol,
Suspended matter is obtained, that is, is unable to get sol system.
Comparative example 2: the difference of a kind of mixed system and embodiment 1a is, does not use P123 type PEO-PPO-PEO
Triblock copolymer and vegetable oil, obtained sol system place 30min at 25 DEG C/60%RH and find obviously to be layered now
As.
Comparative example 3: the difference of a kind of mixed system and embodiment 1a is, husky using P123 type F68 type pool Lip river
Nurse and vegetable oil, obtained sol system place 30min at 25 DEG C/60%RH and find obvious lamination.
Comparative example 4: a kind of conductive film is obtained by following preparation method:
(1) selecting Upilex R type Kapton (is 98.2% in the average transmittance of visible region, vitrifying turns
Temperature is 282 DEG C) it is used as substrate, sol system (selecting embodiment 1a) coating is carried out to surface processed in substrate,
ITO conductive layer is obtained in substrate；
(2) product for obtaining step (1), places 20min at 25 DEG C, is transferred to 60 DEG C of microwave drying 60min, then turns
Enter 164 DEG C be dried under reduced pressure 15min to get；Microwave drying is depressed in a normal atmosphere；The vacuum degree being dried under reduced pressure be-
0.09；ITO conductive layer with a thickness of 90nm.
Comparative example 5: a kind of conductive film is obtained by following preparation method:
(1) selecting Upilex R type Kapton (is 98.2% in the average transmittance of visible region, vitrifying turns
Temperature is 282 DEG C) it is used as substrate, in the surface of substrate ethanol wet 18min, purity nitrogen drying is spare, with ammonium hydroxide/hydrogen peroxide
Surface 8min is soaked, purity nitrogen drying is spare；
(2) sol system (selecting embodiment 1a) coating is carried out to surface processed in substrate, ITO is obtained in substrate
Conductive layer；
(3) product for obtaining step (2), in 164 DEG C be dried under reduced pressure 30min to get；The vacuum degree being dried under reduced pressure
It is -0.09；ITO conductive layer with a thickness of 90nm.
Performance test
The sample prepared is taken, its resistivity and film light transmittance are tested；Respectively at 25 DEG C/40%RH, 60 DEG C/75%RH
Lower placement 7d, 30d, 180d, re-test resistivity and film light transmittance.It 5 groups of parallel test, is averaged.Test result such as table 1
With shown in table 2.Tables 1 and 2 shows, compares comparative example 4 and 5, resistivity of embodiment 2a-2e, 3-4 before and after placement and
The variation of film light transmittance less, wherein embodiment 2a-2c, embodiment 3-4 are before and after place without change by resistivity and film light transmittance
Change；Compared to comparative example 4 and 5, embodiment 2a-2c, the resistivity of embodiment 3-4 are lower, and film light transmittance is higher.
The electrical resistivity results of 1 performance test of table
The film light transmittance result of 2 performance test of table
The specific implementation of the invention is not to be limited to these illustrations for the above content, and technology belonging to the present invention is led
For the those of ordinary skill in domain, without departing from the inventive concept of the premise, a number of simple deductions or replacements can also be made,
It all shall be regarded as belonging to present invention scope of patent protection determined by the appended claims.
Claims (4)
1. a kind of preparation method of conductive film, which comprises the following steps:
(1) select Upilex R type Kapton of the glass transition temperature not less than 280 DEG C as substrate, in substrate
Surface 15~20min of ethanol wet, purity nitrogen drying is spare, soaks 5~10min of surface with ammonium hydroxide/hydrogen peroxide, purity nitrogen drying is standby
With；
(2) sol system coating is carried out to surface processed in substrate, ITO conductive layer is obtained in substrate；The sol body
System includes commercially available ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer, F68 type poloxamer, different
Third alcohol and water, commercially available ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer, F68 in sol system
Type poloxamer, isopropyl alcohol and water mass ratio be 1:0.05~0.08:0.02~0.03:0.005~0.0075:0.8~
1.0:4~5；
(2) product for obtaining step (2) places 18~22min at 20~30 DEG C, is transferred to 58~61 DEG C of microwave drying 58
~62min, then be transferred to 160~170 DEG C be dried under reduced pressure 12~16min to get；Microwave drying is depressed in a normal atmosphere；
The vacuum degree being dried under reduced pressure is -0.08~-0.10；The ITO conductive layer with a thickness of 80~100nm.
2. a kind of preparation method of conductive film according to claim 1, which is characterized in that the sol system by with
The preparation of lower section method: being added water and isopropanol, opens mechanical stirring and adjusts the speed to 400~600r/min, triethanolamine, P123 is added
Type PEO-PPO-PEO triblock copolymer and F68 type poloxamer；It is warming up to 53~57 DEG C and is gradually added under heat-retaining condition
Commercially available ITO nanometer powder is dispersed with stirring uniformly, is down to 20~30 DEG C with the rate of 7~10 DEG C/h.
3. a kind of preparation method of conductive film according to claim 2, which is characterized in that the sol system further includes
Vegetable oil and sodium chloride；In sol system, commercially available ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO three block
Copolymer, F68 type poloxamer, isopropanol, water, vegetable oil and sodium chloride mass ratio be 1:0.05~0.08:0.02~
0.03:0.005~0.0075:0.8~1.0:4~5:0.005~0.008:0.001~0.002.
4. a kind of preparation method of conductive film according to claim 3, which is characterized in that the sol system further includes
Oligosaccharide；In sol system, commercially available ITO nanometer powder, triethanolamine, P123 type PEO-PPO-PEO triblock copolymer,
F68 type poloxamer, isopropanol, water, vegetable oil, sodium chloride and oligosaccharide mass ratio be 1:0.05~0.08:0.02~
0.03:0.005~0.0075:0.8~1.0:4~5:0.005~0.008:0.001~0.002:0.008~0.012.
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|---|---|---|---|---|
| US20040151928A1 (en) * | 2001-06-15 | 2004-08-05 | Hisayasu Kaneshiro | Semiconductive polyimide film and process for production thereof |
| CN102653862A (en) * | 2011-03-01 | 2012-09-05 | 国家纳米科学中心 | Preparation method of indium tin oxide nanometer coating |
| CN103140899A (en) * | 2010-07-30 | 2013-06-05 | 印可得株式会社 | Production method for a transparent conductive film and a transparent conductive film produced thereby |
| CN103788393A (en) * | 2014-02-17 | 2014-05-14 | 江苏亚宝绝缘材料股份有限公司 | Preparation method of conductive polyimide film |
-
2018
- 2018-11-14 CN CN201811354113.6A patent/CN109535469A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040151928A1 (en) * | 2001-06-15 | 2004-08-05 | Hisayasu Kaneshiro | Semiconductive polyimide film and process for production thereof |
| CN103140899A (en) * | 2010-07-30 | 2013-06-05 | 印可得株式会社 | Production method for a transparent conductive film and a transparent conductive film produced thereby |
| CN102653862A (en) * | 2011-03-01 | 2012-09-05 | 国家纳米科学中心 | Preparation method of indium tin oxide nanometer coating |
| CN103788393A (en) * | 2014-02-17 | 2014-05-14 | 江苏亚宝绝缘材料股份有限公司 | Preparation method of conductive polyimide film |
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