CN109525527A - A kind of super low-power consumption puppet backscattering modulation device - Google Patents
A kind of super low-power consumption puppet backscattering modulation device Download PDFInfo
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- CN109525527A CN109525527A CN201811061205.5A CN201811061205A CN109525527A CN 109525527 A CN109525527 A CN 109525527A CN 201811061205 A CN201811061205 A CN 201811061205A CN 109525527 A CN109525527 A CN 109525527A
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- power consumption
- puppet
- super low
- modulation module
- backscattering
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/02—Amplitude-modulated carrier systems, e.g. using on-off keying; Single sideband or vestigial sideband modulation
- H04L27/04—Modulator circuits; Transmitter circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/02—Amplitude-modulated carrier systems, e.g. using on-off keying; Single sideband or vestigial sideband modulation
- H04L27/08—Amplitude regulation arrangements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/18—Phase-modulated carrier systems, i.e. using phase-shift keying
- H04L27/20—Modulator circuits; Transmitter circuits
Abstract
The present invention provides a kind of super low-power consumption puppet backscattering modulation device, including directional coupler, phase modulation module, amplitude modulation module and the antenna integrated in piece, directional coupler receiving end is connected with the input terminal of phase modulation module, the output end of phase modulation module is connected with the input terminal of amplitude modulation module, the output end of amplitude modulation module is connected with the transmitting terminal of directional coupler, and antenna is connected with the antenna end of directional coupler.
Description
Technical field
The invention belongs to technical field of integrated circuits, are related to a kind of pseudo- backscattering modulation device, and in particular to one kind is based on nothing
The super low-power consumption puppet backscattering modulation device of source network.
Background technique
As the representative of asymmetrical wireless communication system, wireless sensor network (WSNs) is widely used in processing in many necks
Unprecedented mass data in domain, such as medical treatment, industry, agricultural.A large amount of data need a large amount of sensing node, to draw
Two big challenges: the substantial increase of huge energy consumption and wireless flow are sent out.In order to save maintenance cost, as being rectified in Fig. 1
The conversion of AC-DC as device has the attraction of substitution conventional batteries, but usually it is unstable and limited.Therefore,
Sensing node needs to reach alap power consumption.With the increase of wireless communications traffic, multi-level modulation is a kind of effective solution
Certainly scheme.Broader bandwidth or higher signal-to-noise ratio (SNR) are typically considered the more multidata method of transmission.However, bandwidth
It is usually limited and can not be increased by bandwidth assignment.On the contrary, needing the high order modulation compared with high s/n ratio (such as n-QAM) that can reach
To higher spectrum efficiency, to transmit more data in identical bandwidth.Therefore, it further decreases power consumption and improves frequency
Spectrum efficiency is two key components of the following wireless sensing node development.
Because of the advantages of its super low-power consumption, the backscattering technique for being directly modulated at radio frequency (RF) carrier wave (CW) is sensor section
There are a large amount of relevant paper publishings in contenders in point, academia.However, there is folding between power consumption and spectrum efficiency
Inner feelings.OOK, ASK or FSK modulation scheme simplified architecture and can reduce power consumption.In order to provide the complicated signal based on planisphere, perhaps
The technology more reported uses method (R.Correia, A.Boaventura the and N.Borges of " hindrance "
Carvalho,"Quadrature Amplitude Backscatter Modulator for Passive Wireless
Sensors in IoT Applications,"in IEEE Transactions on Microwave Theory and
Techniques, vol.65, no.4, pp.1103-1110, April 2017.), as shown in Fig. 1 (a) and (b).These modulators
Working principle be that the load of the terminal of the reflection coefficient with out of phase and amplitude is presented to antenna, to be signal constellation (in digital modulation)
Each point in figure generates phase/amplitude pair, this is method that is a kind of simple and efficiently producing High Data Rate qam symbol.But it
Multilevel modulation when planisphere bending when there are problem because the quantity needs of transformation load match with constellation point,
And it loads to interact with planisphere and will lead to the non-ideal variation of reflection coefficient.For on piece realization, using can power transformation
It is infeasible for feeling library.As shown in Fig. 1 (b), data preprocessing module (A.Tang, Y.Kim, Y.Xu an and
M.C.F.Chang,"A 5.8GHz 54Mb/s Backscatter Modulator for WLAN With Symbol Pre-
Distortion and Transmit Pulse Shaping,"in IEEE Microwave and Wireless
Components Letters, vol.26, no.9, pp.729-731, Sept.2016.) it can also be to increase the cost portion of power consumption
The distortion for dividing ground to mitigate planisphere.In view of the tradeoff of power consumption and spectrum efficiency, filtered using as shown in Fig. 1 (c) based on interference
Modulator (the A.Shirane et based on state-of-the-art on piece back scattering of orthogonal back scattering (IFQB) technology of wave device
al.,"13.8A 5.8GHz RF-powered transceiver with a 113μW 32-QAM transmitter
employing the IF-based quadrature backscattering technique,"IEEE
International Solid-State Circuits Conference-Digest of Technical Papers,San
Francisco, CA, 2015, pp.1-3..), 32-QAM modulation is realized with 113 μ W.IFQB technology is reached with low power consumption
The 32-QAM planisphere of high quality, but it needs additional 96MHz IF signal fIF, this intermediate-freuqncy signal must have certain band
Width, otherwise can be filtered image signal and be difficult to carry out.In addition, IFQB technology occupies 2fIFBandwidth, this will consumption
Additional bandwidth resources.
Summary of the invention
Regarding the issue above, the present invention provides a kind of super low-power consumption puppet backscattering modulation device, is based on passive net
Network, has low in energy consumption, supports high order modulation, at low cost, can integrated level it is high, be suitble to chip SOC (System On Chip system
Integrated chip) the features such as.
To achieve the above object, technical scheme is as follows:
A kind of super low-power consumption puppet backscattering modulation device, including in the integrated directional coupler of piece, phase modulation module, amplitude
Modulation module and antenna, directional coupler receiving end are connected with the input terminal of phase modulation module, the output of phase modulation module
End is connected with the input terminal of amplitude modulation module, and the output end of amplitude modulation module is connected with the transmitting terminal of directional coupler, day
Line is connected with the antenna end of directional coupler.
Further, directional coupler includes auto-transformer, adjustable condenser and balance resistance, and auto-transformer includes
Two inductance coils, adjustable condenser include covering the coarse adjustment capacitor array of working frequency range and providing fine adjusting resolution ratio to make
For the fine tuning capacitor array of minimal adjustment step-length, wherein coarse adjustment capacitor array is in parallel with auto-transformer, balance resistance, fine tuning
Capacitor array is in parallel with an inductance coil of auto-transformer.
Further, inductance coil is the on piece tap inductor coil of CMOS technology top layer three-layer metal layer.
Further, the winding ratio of inductance coil is 1, and the RF signal for being input to directional coupler is made accurately to be divided into one
To differential signal.
Further, phase modulation module includes balun and cascade multiphase filter based on passive transformer.
Further, the balun of phase modulation module includes the difference octagon inductance of two stackings, uses CMOS technology
Top layer two metal layers.
Further, multiphase filter uses two-stage cascade.
Further, amplitude modulation module includes resistance decrement array and output stage balun, for be isolated or sum it up the road I and
The signal on the road Q, the output of each ARRAY PROCESSING multiphase filter.
Further, this super low-power consumption puppet backscattering modulation device is modulated using N-QAM, wherein N=22i, i is positive integer, width
The electric resistance array for spending modulation module is 2i-1Grade.
Further, the transmission loss of the transmission path of this super low-power consumption puppet backscattering modulation device is higher than RX path
10dB。
Fig. 2-3 in the principle of the present invention combination following Examples 1 is described as follows:
Modulated signal is separated from radio-frequency carrier by being introduced on piece directional coupler, improves the star of multi-level modulation
Seat plot quality.Therefore, modulation can be realized in radio frequency domains without being limited by the reflection coefficient of traditional backscattering technique, also keep away
Exempted from radio frequency domains modulation there are the problem of.Modulation module is by addition to switch, remaining device is passive device realization, therefore in reality
Energy consumption substantially reduces in the work of border.
CMOS proposed above integrates transvar coupler using the electric equilibrium of bridge transformer or auto-transformer as base
Plinth.As the electric equilibrium characteristic of auto-transformer, when three terminals (ANT of antenna, the RX of receiver, transmitter TX) resistance
Anti- and balance resistance RBWhen balance, TX and RX are electrically isolated from each other (M.Mikhemar, H.Darabi and A.Abidi, " A
tunable integrated duplexer with 50dB isolation in 40nm CMOS,"IEEE
International Solid-State Circuits Conference-Digest of Technical Papers,San
Francisco,CA,2009,pp.386-387,387a.).And radio-frequency carrier can be passed from ANT respectively with different transmission loss
It is defeated to arrive RX and TX.By between TX and RX capacitor and the frequency response that determines of inductance form one by tunable capacitor CCAnd CFIt adjusts
The recess peak of section, and the depth at the peak that is recessed is by balance resistance RBIt determines.If selecting inductance L and capacitor appropriate between RX and TX
C, then working frequency f0It determines as follows:
Enough bandwidth can be provided with certain isolation by adjusting balance resistance, pass signal independently in each path
It is defeated.In view of the characteristic of directional coupler, radio-frequency carrier should be transferred to RX from ANT and is modulated by modulation module.It adjusts
Signal after system will be returned by transmission path, be emitted by the same antenna.In order to mitigate leakage of the CW to transmission path, need
More reverse isolations are carried out on RX path, thus the transmission loss of transmission path be optimised for it is 10dB higher than RX path.
Modulator is generated by orthogonal signalling and Multilevel modulation is realized in amplitude decaying.Therefore, carrier wave can be modulated directly in radio frequency domains.
The radio-frequency carrier of original transmitted is the simple signal with initial phase in RX path.In view of such as n-QAM
Deng Multilevel modulation, need to carry out quadrature phase transformation, so that phase information is added in clean carrier signal.Amplitude tune
System is realized by amplitude attenuation array and output buffer.In order to reduce power consumption, amplitude modulation can only pass through passive device
Amplitude decay to realize because provide amplitude gain active device usually have power consumption.By taking 64-QAM as an example, Yao Shixian 64-
QAM, amplitude will decay in 1/8,3/8,5/8,7/8 4 rank respectively.0 degree of output of phase-modulation and 180 degree output group
It is last at the road I signal and the road Q signal to obtain differential signal.Finally need to be summed it up the signal on the road I and the road Q with output stage, with
It is done directly the amplitude modulation of radio frequency domains.Such as final transmission power is required, output stage can be changed to active device realization,
Increase defeated plus output stage output power in the case where consuming certain power consumption.
Specifically, super low-power consumption puppet backscattering modulation device of the invention is based on passive network, has below beneficial to effect
Fruit:
1) good compatibility: completely compatible on piece technique, the present invention is made of passive device completely, is suitable for a variety of on pieces
Technique, including it is not limited to the techniques such as CMOS, BiCMOS, HBT.The present invention, which is established, realizes on piece directional coupler on piece technique
Basis on, good compatibility.
2) strong applicability: on piece directional coupler and amplitude modulation module by introducing the manufacture of on piece technique.It is setting
During meter, changes the series of amplitude modulation module, different rank QAM modulation can be realized, directional coupler module can lead to
It crosses change total capacitance value and total resistance value adapts to different working frequencies, change can be passed through for the system of different requirements
Above-mentioned condition reaches requirement.
3) tuning performance is strong: introducing capacitor CC,CFFor frequency tuning, resistance RBIt tunes, is avoided due to hair for isolation
It penetrates machine output and matches the brings non-ideal effects such as output matching variation, technological fluctuation, temperature change under poor, different output power
Deterioration for practical devices working performance.
4) small in size, integrated level is high: due to the present invention is based on piece directional coupler manufactured by piece technique, so phase
For the devices such as circulator of traditional discrete device manufacture, can be used as a module be integrated in other Circuits and Systems it is single
It is small in size on chip, it is at low cost, greatly improve the integrated level of system.
5) super low-power consumption: system is all based on passive network realization, and transistor is only used as switch, if not calculating each device
For part because of the leakage current caused by non-ideal factor, the quiescent dissipation of this modulator theoretically is 0.
Detailed description of the invention
Fig. 1 is the structure chart of traditional backscattering modulation device；
Fig. 2 is the structure chart of the super low-power consumption puppet backscattering modulation device of embodiment 1；
Fig. 3 is the super low-power consumption puppet backscattering modulation device internal structure chart of embodiment 1；
Fig. 4 is the circuit structure diagram of the super low-power consumption puppet backscattering modulation device of embodiment 1；
Fig. 5 is the circuit structure diagram of the super low-power consumption puppet backscattering modulation device of embodiment 2.
Specific embodiment
In order to keep technical solution of the present invention clearer, it is described in detail with reference to the accompanying drawing.
Embodiment 1
Realize that a kind of 64-QAM based on passive network is ultralow under TSMC 40nm 1P10M CMOS technology as shown in Figure 2
Power consumption puppet backscattering modulation device, including directional coupler, phase modulation module, amplitude modulation module and the antenna integrated in piece.
Directional coupler receiving end is connected with the input terminal of phase modulation module, the output end and amplitude modulation module of phase modulation module
Input terminal be connected, the output end of amplitude modulation module is connected with the transmitting terminal of directional coupler, antenna and directional coupler
Antenna end is connected.
It is realized in the auto-transformer of piece directional coupler by the on piece tapped inductance of the metal layer of M8~10, such as Fig. 3
It is shown.In view of the technological fluctuation and impedance variations of each node, directional coupler needs tunable capacitor and balance resistance.Adjustable electric
The coarse adjustment capacitor C of appearancecArray covers working frequency range, the fine tuning capacitor C of tunable capacitorfArray provides adjusting fine enough and differentiates
Rate is as the smallest adjusting step-length.Since in higher frequency operation, the dead resistance and capacitor of switch are interactional, institutes
With when the value of capacitor array changes, electric resistance array is also required to adjust.The configuration of directional coupler can be before modulation
It is adjusted, so the switch of all adjusting arrays hardly consumes power consumption.
Phase modulation module generates quadrature phase, and module is by a balun and a cascade multiphase based on passive transformer
Filter realization, as shown in Figure 3.The difference octagon inductance that balun based on passive transformer is stacked by two customizes,
Use M9-10 metal layer.
The winding ratio of the coupling inductance of directional coupler is 1, it ensure that input rf signal be accurately divided into it is a pair of poor
Sub-signal.Multiphase filter is realized by two-stage cascade, to obtain better precision and less transmission loss.Working frequency f0
It is determined by following formula:
Wherein, Rp is that directional coupler is connected across parallel resistance all between receiving path and transmitting path, and Cp is orientation
Coupler is connected across shunt capacitance all between receiving path and transmitting path.In view of the matching of inter-stage impedance, it is necessary to each
The value of grade resistance and capacitor optimizes, and multiphase filter needs that the variation of load can be born.
Amplitude modulation module is realized by resistance decrement array and output stage balun, for being isolated or summing it up the road I and the road Q
Signal.Resistance decrement array as shown in figure 4, each ARRAY PROCESSING multiphase filter output so that the amplitude of oscillation of signal will respectively
Decay with 1/8,3/8,5/8,7/8, cooperate I, Q orthogonal signalling, completes 64-QAM modulation.When frequency is higher, switch
Ghost effect starts to display, and should optimize the value of each resistance at this time, suitably selection switch size.This module is also several at work
It is consumed without power consumption.
In addition, the antenna end of directional coupler is connected with piece outside antenna.
Embodiment 2
Super low-power consumption puppet backscattering modulation device provided in this embodiment extends to N-QAM modulation, N=22i(i is positive integer),
Roughly the same with embodiment 1, as shown in figure 5, difference is: the electric resistance array of amplitude modulation module becomes 2i-1Grade, so that signal
The amplitude of oscillation respectively with 1/2i,(1/2i+1*1/2i-1),……(1/2i+i*1/2i-1) proportionate relationship decay, cooperation I, Q just
Signal is handed over, N-QAM modulation is completed.
Super low-power consumption puppet backscattering modulation device of the invention is described above by embodiment, those skilled in the art can evidence
The range that the change of unsubstantiality in the form of making or in terms of content is substantially protected without departing from the present invention.Therefore, of the invention
It is not limited to the content disclosed in above embodiments, protection scope of the present invention should be subject to the claims.
Claims (10)
1. a kind of super low-power consumption puppet backscattering modulation device, including in the integrated directional coupler of piece, phase modulation module, amplitude tune
Molding block and antenna, directional coupler receiving end are connected with the input terminal of phase modulation module, the output end of phase modulation module
It is connected with the input terminal of amplitude modulation module, the output end of amplitude modulation module is connected with the transmitting terminal of directional coupler, antenna
It is connected with the antenna end of directional coupler.
2. super low-power consumption puppet backscattering modulation device as described in claim 1, which is characterized in that directional coupler includes that self coupling becomes
Depressor, adjustable condenser and balance resistance, auto-transformer include two inductance coils, and adjustable condenser includes covering work frequency
Fine tuning capacitor array of the adjusting resolution ratio as minimal adjustment step-length of the coarse adjustment capacitor array and offer of section finely, wherein thick
Adjust capacitor array in parallel with auto-transformer, balance resistance, an inductance coil of fine tuning capacitor array and auto-transformer is simultaneously
Connection.
3. super low-power consumption puppet backscattering modulation device as claimed in claim 2, which is characterized in that inductance coil is CMOS technology top
The on piece tap inductor coil of layer three-layer metal layer.
4. super low-power consumption puppet backscattering modulation device as claimed in claim 2, which is characterized in that the winding ratio of inductance coil is 1,
The RF signal for being input to directional coupler is set accurately to be divided into a pair of of differential signal.
5. super low-power consumption puppet backscattering modulation device as described in claim 1, which is characterized in that phase modulation module includes being based on
The balun of passive transformer and cascade multiphase filter.
6. super low-power consumption puppet backscattering modulation device as claimed in claim 5, which is characterized in that the balun packet of phase modulation module
Include the difference octagon inductance of two stackings.
7. super low-power consumption puppet backscattering modulation device as claimed in claim 5, which is characterized in that the balun of phase modulation module makes
With CMOS technology top layer two metal layers.
8. super low-power consumption puppet backscattering modulation device as claimed in claim 5, which is characterized in that multiphase filter uses two-stage grade
Connection.
9. super low-power consumption puppet backscattering modulation device as described in claim 1, which is characterized in that amplitude modulation module includes resistance
Attenuation array and output stage balun, for being isolated or summing it up the signal on the road I and the road Q, each ARRAY PROCESSING multiphase filter it is defeated
Out.
10. super low-power consumption puppet backscattering modulation device as described in claim 1, which is characterized in that the puppet back scattering of this super low-power consumption
Modulator is modulated using N-QAM, wherein N=22i, i is positive integer, and the electric resistance array of amplitude modulation module is 2i-1Grade.
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| CN201811061205.5A CN109525527A (en) | 2018-09-12 | 2018-09-12 | A kind of super low-power consumption puppet backscattering modulation device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022237981A1 (en) * | 2021-05-12 | 2022-11-17 | Telefonaktiebolaget Lm Ericsson (Publ) | Bidirectional interface port |
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| US20040257220A1 (en) * | 2003-05-28 | 2004-12-23 | Martin Fischer | Circuit arrangement and method for phase modulation in a backscattering transponder |
| CN1788293A (en) * | 2003-06-05 | 2006-06-14 | 摩托罗拉公司 | Subcarrier in an organic RFID semiconductor |
| CN102073834A (en) * | 2009-11-20 | 2011-05-25 | 数伦计算机技术（上海）有限公司 | Radio frequency identification system |
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2018
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|---|---|---|---|---|
| US20040257220A1 (en) * | 2003-05-28 | 2004-12-23 | Martin Fischer | Circuit arrangement and method for phase modulation in a backscattering transponder |
| CN1788293A (en) * | 2003-06-05 | 2006-06-14 | 摩托罗拉公司 | Subcarrier in an organic RFID semiconductor |
| CN102073834A (en) * | 2009-11-20 | 2011-05-25 | 数伦计算机技术（上海）有限公司 | Radio frequency identification system |
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| XIUCHENG HAO等: "A 43.2 μW 2.4 GHz 64-QAM Pseudo-Backscatter Modulator Based on Integrated Directional Coupler", 《2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)》 * |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022237981A1 (en) * | 2021-05-12 | 2022-11-17 | Telefonaktiebolaget Lm Ericsson (Publ) | Bidirectional interface port |
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