CN109525151A - A kind of hardware driving circuit and driving method suitable for different capacity brushless motor - Google Patents
A kind of hardware driving circuit and driving method suitable for different capacity brushless motor Download PDFInfo
- Publication number
- CN109525151A CN109525151A CN201811640919.1A CN201811640919A CN109525151A CN 109525151 A CN109525151 A CN 109525151A CN 201811640919 A CN201811640919 A CN 201811640919A CN 109525151 A CN109525151 A CN 109525151A
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- China
- Prior art keywords
- driving circuit
- phase
- oxide
- metal
- brushless motor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P6/00—Arrangements for controlling synchronous motors or other dynamo-electric motors using electronic commutation dependent on the rotor position; Electronic commutators therefor
- H02P6/04—Arrangements for controlling or regulating the speed or torque of more than one motor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P2207/00—Indexing scheme relating to controlling arrangements characterised by the type of motor
- H02P2207/05—Synchronous machines, e.g. with permanent magnets or DC excitation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The present invention relates to a kind of hardware driving circuit machine driving methods suitable for different capacity brushless motor, driving for three-phase brushless motor, including A phase driving circuit, B phase driving circuit, C phase driving circuit, the A phase driving circuit, B phase driving circuit, C phase phase driving circuit hardware circuit are identical；The metal-oxide-semiconductor that wherein four peak point currents of each freedom of every phase driving circuit are K forms, and metal-oxide-semiconductor parallel connection forms parallel units two-by-two, i.e. flash or low side of 2 MOS as H bridge drive three-phase motor by a H-bridge circuit.When needing to drive 80A brushless motor, six metal-oxide-semiconductors are welded, i.e., weld a MOS in every phase driving circuit；When needing to drive the driving motor of 120A brushless motor, then 12 metal-oxide-semiconductors are welded.
Description
Technical field
The present invention relates to motor driven fields, and in particular to a kind of hardware driving electricity suitable for different capacity brushless motor
Road and driving method.
Background technique
Many of automobile electronics motor drive module, such as EPS.Since the preceding load per axle of each vehicle is different, because
This needs the brushless motor using different capacity for different automobile types.Such as use different hardware platforms, early period R & D Cost
It is expensive.Currently, motor drive module is barricaded as using the MOS of 6 SMD encapsulation, such as need to drive two kinds of brushless electricity of 80A and 120A
Machine, then needing to design two different hardware due to the difference of MOS package dimension.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of suitable for the hard of different capacity brushless motor
Part driving circuit can be used for driving two kinds of brushless motors of 80A and 120A simultaneously.
The purpose of the present invention is achieved through the following technical solutions:
A kind of hardware driving circuit suitable for different capacity brushless motor, for the driving of three-phase brushless motor, including A
Phase driving circuit, B phase driving circuit, C phase driving circuit, the A phase driving circuit, B phase driving circuit, C phase phase driving circuit
Hardware circuit is identical；
The metal-oxide-semiconductor that wherein four peak point currents of each freedom of every phase driving circuit are K forms, and metal-oxide-semiconductor parallel connection is formed simultaneously two-by-two
Receipts or other documents in duplicate member drives three-phase motor by a H bridge.
Further, the metal-oxide-semiconductor is the metal-oxide-semiconductor of surface mount device.
Further, the value of the peak point current K of the metal-oxide-semiconductor is 80A < K < 120A.
Further, the metal-oxide-semiconductor is welded on the same PCB.
A kind of driving method of the hardware driving electricity suitable for different capacity brushless motor, this method includes for driving
Two kinds of brushless motors of 80A and 120A；
Six metal-oxide-semiconductors are welded, i.e., weld a parallel units, the driving as 80A brushless motor in every phase driving circuit
Circuit；
12 metal-oxide-semiconductors are welded, the driving electricity as 120A brushless motor.
The beneficial effects of the present invention are: only need to weld the MOS for the SMD that 6 peak point currents are 100A for 80A motor,
Remaining 6 MOS, which is not welded, can be realized；And the MOS of 12 100A is all welded for 120A motor.It is fixed by ohm
Rule, per diversion design is carried out by two the in parallel of MOS on the way, ECU design is a complicated process, is needed a large amount of
Time and money.If being able to carry out standardized design, by a kind of ECU, only driven by adjusting the quantity of IC welding
The motor of different capacity.It can not only save the development time, and the funds of research and development can be saved.Be easier by patch/no
It pastes to configure the application of 60Apeak or 120Apeak.
Detailed description of the invention
Fig. 1 is circuit diagram of the present invention；
Fig. 2 is three phase bridge circuit.
In figure: pin explanation: the grid G of 1-MOS pipe, the source S of 2-MOS pipe, the drain D of 3-OS pipe.
Specific embodiment
Technical solution of the present invention is described in further detail with reference to the accompanying drawing, but protection scope of the present invention is not limited to
It is as described below.
As shown in Figure 1, a kind of hardware driving circuit suitable for different capacity brushless motor, the circuit is by 12 peak values
For the metal-oxide-semiconductor composition of the surface mount device of 100A, power supply 12V.Metal-oxide-semiconductor is in parallel two-by-two to form three A type units shunting electricity
Road and three Type B unit shunt circuits, each A type unit shunt circuit is respectively and a Type B unit shunt circuit
Series connection forms shape A phase driving circuit, B phase driving circuit, C phase phase driving circuit；In each closed circuit: A type unit point
The grid G of two metal-oxide-semiconductors connects altogether in current circuit, and the source S of two metal-oxide-semiconductors meets positive pole, two MOS in Type B unit shunt circuit altogether
The grid G of pipe connects altogether, the drain D ground connection of two metal-oxide-semiconductors, and two metal-oxide-semiconductor drain Ds and Type B unit shunt electricity in A type unit shunt circuit
The source S of two metal-oxide-semiconductors connects altogether in road, is total to contact as motor driven output end, that is, forms a H-bridge circuit and drive three-phase electricity
Machine, i.e., Motor A, Motor B, Motor C in figure connect the three-phase input end of three-phase motor respectively.12 metal-oxide-semiconductors are in two
The matrix arrangement that row three arranges, six metal-oxide-semiconductors of every row, four metal-oxide-semiconductors of each column, the source S of six metal-oxide-semiconductors of the first row are connecing power supply just
Pole, the drain D ground connection of six metal-oxide-semiconductors of the second row, the source of the drain D of six metal-oxide-semiconductors of the first row and second six metal-oxide-semiconductors of row
Pole S connects (connecing altogether).
When needing to drive 80A brushless motor, six metal-oxide-semiconductors are welded, i.e., weld one and receipts or other documents in duplicate in every phase driving circuit
Member；When needing to drive the driving motor of 120A brushless motor, then 12 metal-oxide-semiconductors are welded.
Three phase bridge circuit explanation:
As shown in Fig. 2, in the prior art, the basic circuit formed using 6 MOS, for controlling three-phase motor.Three-phase electricity
Machine generates the armature field rotated by giving by three-phase current in armature winding, just in the air cleft in bore of stator,
The rotor of three-phase motor is a permanent magnet.
Electronic commutation is carried out according to three-phase windings, and motor rotation can be started.And electronics is carried out to motor three-phase windings
The hardware circuit of commutation is exactly three phase bridge circuit.
As shown in Fig. 2, controller control MOS's cut-offs, BG1 and BG5 are opened, and electric current enters from the A phase of motor, from B phase
Outflow, i.e. motor a winding are powered.Subsequent carry out electronic commutation, makes the magnetic field for generating rotation in air cleft, turns in this way
Sub- permanent magnet is just rotated, so that motor starts turning.
Specific electronic commutation process:
1.t=0, power-BG1-U-V-BG5-GND
2.t=1/6T, power-BG1-U-W-BG6-GND
3.t=2/6T, power-BG2-V-W-BG6-GND
4.t=3/6T, power-BG2-V-U-BG4-GND
5.t=4/6T, power-BG3-W-U-BG4-GND
6.t=5/6T, power-BG3-W-V-BG5-GND
T=1, and repeat the state of t=0
The above is only a preferred embodiment of the present invention, it should be understood that the present invention is not limited to described herein
Form should not be regarded as an exclusion of other examples, and can be used for other combinations, modifications, and environments, and can be at this
In the text contemplated scope, modifications can be made through the above teachings or related fields of technology or knowledge.And those skilled in the art institute into
Capable modifications and changes do not depart from the spirit and scope of the present invention, then all should be in the protection scope of appended claims of the present invention
It is interior.
Claims (5)
1. a kind of hardware driving circuit suitable for different capacity brushless motor, for the driving of three-phase brushless motor, feature
It is, including A phase driving circuit, B phase driving circuit, C phase driving circuit, the A phase driving circuit, B phase driving circuit, C phase
Phase driving circuit hardware circuit is identical；
The metal-oxide-semiconductor that wherein four peak point currents of each freedom of every phase driving circuit are K forms, and metal-oxide-semiconductor parallel connection forms simultaneously receipts or other documents in duplicate two-by-two
Member drives three-phase motor by a H bridge.
2. a kind of hardware driving circuit suitable for different capacity brushless motor according to claim 1, which is characterized in that
The metal-oxide-semiconductor is the metal-oxide-semiconductor of surface mount device.
3. a kind of hardware driving circuit suitable for different capacity brushless motor according to claim 2, which is characterized in that
The value of the peak point current K of the metal-oxide-semiconductor is 80A < K < 120A.
4. a kind of hardware driving circuit suitable for different capacity brushless motor according to claim 3, which is characterized in that
The metal-oxide-semiconductor is welded on the same PCB.
5. a kind of for being suitable for the driving of the hardware driving electricity of different capacity brushless motor described in any one of claim 1-4
Method, which is characterized in that this method includes for driving two kinds of brushless motors of 80A and 120A；
Six metal-oxide-semiconductors are welded, i.e., weld a parallel units, the driving circuit as 80A brushless motor in every phase driving circuit；
12 metal-oxide-semiconductors are welded, the driving electricity as 120A brushless motor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811640919.1A CN109525151A (en) | 2018-12-29 | 2018-12-29 | A kind of hardware driving circuit and driving method suitable for different capacity brushless motor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811640919.1A CN109525151A (en) | 2018-12-29 | 2018-12-29 | A kind of hardware driving circuit and driving method suitable for different capacity brushless motor |
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| Publication Number | Publication Date |
|---|---|
| CN109525151A true CN109525151A (en) | 2019-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811640919.1A Pending CN109525151A (en) | 2018-12-29 | 2018-12-29 | A kind of hardware driving circuit and driving method suitable for different capacity brushless motor |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201163755Y (en) * | 2008-01-31 | 2008-12-10 | 徐小康 | High power MOSFET driving module |
| CN102315808A (en) * | 2010-07-02 | 2012-01-11 | 西安新大良电子科技有限公司 | Installation and connection method for connecting TO220-packaged MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) multiple tubes in parallel |
| CN103703566A (en) * | 2011-08-02 | 2014-04-02 | 罗姆股份有限公司 | Semiconductor device, and manufacturing method for same |
| US20170201201A1 (en) * | 2016-01-07 | 2017-07-13 | Denso Corporation | Current detection apparatus and control apparatus of rotary electric machine |
| CN108336910A (en) * | 2016-12-22 | 2018-07-27 | 瑞萨电子株式会社 | Semiconductor device and inverter system |
| CN208046288U (en) * | 2018-04-27 | 2018-11-02 | 武汉理工大学 | Electric vehicle integrated charge device |
-
2018
- 2018-12-29 CN CN201811640919.1A patent/CN109525151A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201163755Y (en) * | 2008-01-31 | 2008-12-10 | 徐小康 | High power MOSFET driving module |
| CN102315808A (en) * | 2010-07-02 | 2012-01-11 | 西安新大良电子科技有限公司 | Installation and connection method for connecting TO220-packaged MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) multiple tubes in parallel |
| CN103703566A (en) * | 2011-08-02 | 2014-04-02 | 罗姆股份有限公司 | Semiconductor device, and manufacturing method for same |
| US20170201201A1 (en) * | 2016-01-07 | 2017-07-13 | Denso Corporation | Current detection apparatus and control apparatus of rotary electric machine |
| CN108336910A (en) * | 2016-12-22 | 2018-07-27 | 瑞萨电子株式会社 | Semiconductor device and inverter system |
| CN208046288U (en) * | 2018-04-27 | 2018-11-02 | 武汉理工大学 | Electric vehicle integrated charge device |
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Application publication date: 20190326 |