CN109524570B - High-contrast organic electroluminescent device and preparation method thereof - Google Patents
High-contrast organic electroluminescent device and preparation method thereof Download PDFInfo
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- CN109524570B CN109524570B CN201811600564.3A CN201811600564A CN109524570B CN 109524570 B CN109524570 B CN 109524570B CN 201811600564 A CN201811600564 A CN 201811600564A CN 109524570 B CN109524570 B CN 109524570B
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Abstract
The invention discloses a high-contrast organic electroluminescent device and a preparation method thereof, wherein the device comprises a metal electrode, an electron injection layer, an electron transport layer, a luminescent layer, a hole transport layer, a hole injection layer, an ITO substrate and an optical film which are sequentially arranged from inside to outside; the optical film is provided with a luminescent material which is the same as the luminescent layer and is used for absorbing visible light with the wavelength less than that of the light emitted by the luminescent layer. The organic electroluminescent device with high contrast and the preparation method thereof adopt the optical film which is the same as the material of the luminescent layer, absorb other interference light except the light emitted by the device in the external environment light on the basis of ensuring that the light emitted by the device has high transmittance, thereby reducing the interference of the environment light, ensuring the high-contrast luminescence, not influencing the overall performance of the organic electroluminescent device, being capable of being matched with the organic electroluminescent device and reducing the volume of the overall device.
Description
Technical Field
The invention relates to the technical field of organic electroluminescent devices, in particular to a high-contrast organic electroluminescent device and a preparation method thereof.
Background
In recent years, organic electroluminescent devices have been widely used in practical production, especially in the field of illumination and display, and compared with conventional inorganic electroluminescent devices, research, preparation and application thereof have become one of the most active research fields today. The organic electroluminescent device has the advantages of self luminescence, high efficiency, color saturation, wide visual angle, high response speed, good low-temperature characteristic and the like, is currently applied to many fields, for example, the organic electroluminescent device is applied to an automobile tail lamp, is simple and convenient to prepare, can realize surface luminescence, and can be better integrated into practical application. However, the organic electroluminescent device has many problems, one of which is that the contrast ratio of the organic electroluminescent device is greatly reduced under the interference of ambient light.
In the past, when designing a high-contrast organic electroluminescent device, a method of arranging a light shield outside the light-emitting device is generally adopted, and the method generally arranges the light shield at a certain specific angle outside the light-emitting device and roughens the surface of the light shield so as to diffuse and reflect ambient light on the surface of the light shield and reduce direct incidence of the ambient light. Although the method can reduce the direct reflection of the ambient light on the surface of the light-emitting device, the method can have a certain influence on the emitted light of the device, namely, the interference of the ambient light is reduced, and simultaneously, the performance of the device is reduced, so that the organic electroluminescent device has the problem of low-contrast light emission under the interference of the ambient light, and the method can lead to the increase of the volume of the whole device.
Disclosure of Invention
The invention aims to provide a high-contrast organic electroluminescent device and a preparation method thereof, which can reduce the interference of ambient light and ensure high-contrast luminescence.
In order to achieve the purpose, the invention provides the following scheme:
an organic electroluminescent device with high contrast comprises a metal electrode, an electron injection layer, an electron transport layer, a luminescent layer, a hole transport layer, a hole injection layer, an ITO substrate and an optical film which are arranged in sequence from inside to outside;
the metal electrode is a cathode and is used for generating electrons; the electron injection layer is used for injecting the electrons from the metal electrode into the electron transport layer; the electron transport layer is used for transporting the electrons to the light emitting layer; the light-emitting layer is a recombination region of the electrons and the holes and is used for the recombination luminescence of carriers; the hole transport layer is used for transporting the holes to the light emitting layer; the hole injection layer is used for injecting the holes from the metal electrode into the hole transport layer; the ITO substrate is used for evaporating the optical film; the optical film is provided with a luminescent material which is the same as the luminescent layer and is used for absorbing visible light with the wavelength less than that of the light emitted by the luminescent layer.
Optionally, the thickness of the optical film is 200-400 nm, and the material of the optical film includes DCJTB.
Optionally, the thicknesses of the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer and the hole injection layer are all 10-40 nm; the material of the electron injection layer comprises 8-hydroxyquinoline-lithium; the material of the electron transport layer comprises 8-hydroxyquinoline aluminum; the material of the luminescent layer comprises DCJTB; the material of the hole transport layer comprises 8-hydroxyquinoline aluminum; the material of the hole injection layer includes an organic semiconductor NPB.
Optionally, the thickness of the metal electrode is 100-200 nm, and the material of the metal electrode includes aluminum.
A preparation method of a high-contrast organic electroluminescent device comprises the following steps:
cleaning the ITO substrate;
evaporating an optical film on one surface of the cleaned ITO substrate to obtain the ITO substrate evaporated with the optical film;
and sequentially evaporating a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a metal electrode on the non-evaporated surface of the ITO substrate evaporated with the optical film to obtain the high-contrast organic electroluminescent device.
Optionally, the cleaning of the ITO substrate specifically includes:
adding 50-100 ml of detergent and deionized water into the ITO substrate, and ultrasonically cleaning for 80-100 min;
continuously ultrasonically cleaning the ITO substrate for 80-100 min by using pure deionized water;
continuously ultrasonically cleaning the ITO substrate for 80-100 min by using acetone;
and continuously ultrasonically cleaning the ITO substrate for 80-100 min by using isopropanol to obtain the cleaned ITO substrate.
Optionally, one surface of the cleaned ITO substrate is evaporated with an optical film to obtain an ITO substrate evaporated with an optical film, and the method specifically includes:
baking the cleaned ITO substrate for 8-12 min by using a baking lamp, and sequentially putting one surface of the baked ITO substrate and the optical thin film into a vacuum evaporation instrument;
vacuumizing the vacuum evaporation instrument until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5～10- 9mbar；
Starting to heat the optical film until the material evaporation temperature of the optical film is reached;
and starting evaporation, and controlling the evaporation rate and the thickness of the material of the optical film by using a crystal oscillator of the vacuum evaporation instrument, wherein the evaporation rate of the material of the optical film is 0.1-0.2 nm/s, and the evaporation thickness is 200-400 nm, so that the ITO substrate evaporated with the optical film is obtained.
Optionally, the surface of the ITO substrate on which the optical thin film is evaporated is sequentially evaporated with a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a metal electrode to obtain a high-contrast organic electroluminescent device, which specifically includes:
putting the non-evaporation surface of the ITO substrate evaporated with the optical thin film into a vacuum evaporation instrument, and sequentially putting a material of a hole injection layer, a material of a hole transport layer, a material of a luminescent layer, a material of an electron transport layer, a material of an electron injection layer and a material of a metal electrode;
vacuumizing the vacuum evaporation instrument until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5～10- 9mbar；
Heating the material of the hole injection layer to an evaporation temperature, and evaporating the material of the hole injection layer; heating the material of the hole transport layer to an evaporation temperature, and evaporating the material of the hole transport layer; heating the material of the luminous layer to an evaporation temperature, and evaporating the material of the luminous layer; heating the material of the electron transport layer to an evaporation temperature, and evaporating the material of the electron input layer; heating the material of the electron injection layer to an evaporation temperature, and evaporating the material of the electron injection layer; controlling the evaporation rate and the thickness of the material of the hole injection layer, the material of the hole transport layer, the material of the luminescent layer, the material of the electron transport layer and the material of the electron injection layer by a crystal oscillator of a vacuum evaporation instrument; the evaporation rates of the material of the hole injection layer, the material of the hole transport layer, the material of the luminescent layer, the material of the electron transport layer and the material of the electron injection layer are all 0.06-0.12 nm/s, the evaporation thicknesses of the material of the hole injection layer, the material of the hole transport layer, the material of the luminescent layer and the material of the electron transport layer are all 10-40 nm, and the evaporation thickness of the material of the electron injection layer is 1-5 nm;
and continuously heating and evaporating the material of the metal electrode, and controlling the evaporation rate and the thickness of the material of the metal electrode through a crystal oscillator of a vacuum evaporation instrument, wherein the evaporation rate of the material of the metal electrode is 0.5-2 nm/s, and the evaporation thickness is 100-200 nm, so that the high-contrast organic electroluminescent device is obtained.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the invention discloses a high-contrast organic electroluminescent device, which comprises a metal electrode, an electron injection layer, an electron transport layer, a luminescent layer, a hole transport layer, a hole injection layer, an ITO substrate and an optical film, wherein the metal electrode, the electron injection layer, the electron transport layer, the luminescent layer, the hole transport layer, the hole injection layer, the ITO substrate and the optical film are sequentially arranged from inside to outside; the metal electrode is a cathode and is used for generating electrons; the electron injection layer is used for injecting the electrons from the metal electrode into the electron transport layer; the electron transport layer is used for transporting the electrons to the light emitting layer; the light-emitting layer is a recombination region of the electrons and the holes and is used for the recombination luminescence of carriers; the hole transport layer is used for transporting the holes to the light emitting layer; the hole injection layer is used for injecting the holes from the metal electrode into the hole transport layer; the ITO substrate is used for evaporating the optical film; the optical film is provided with a luminescent material which is the same as the luminescent layer and is used for absorbing visible light with the wavelength less than that of the light emitted by the luminescent layer. The organic electroluminescent device with high contrast and the preparation method thereof disclosed by the invention absorb other interference light except the light emitted by the device in the external environment light by adopting the optical film with the same material as the light-emitting layer on the basis of ensuring that the light emitted by the device has high transmittance, thereby reducing the interference of the environment light, ensuring high-contrast light emission, not influencing the overall performance of the organic electroluminescent device, being matched with the organic electroluminescent device and reducing the volume of the overall device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a structural view of an embodiment of a high contrast organic electroluminescent device according to the present invention;
FIG. 2 is a flow chart of an embodiment of a method of fabricating a high contrast organic electroluminescent device according to the present invention;
fig. 3 is a schematic view of the overall structure of a high-contrast red light device prepared by the embodiment of the preparation method of the high-contrast organic electroluminescent device according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a high-contrast organic electroluminescent device and a preparation method thereof, which can reduce the interference of ambient light and ensure high-contrast luminescence.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 1 is a structural view of an embodiment of a high contrast organic electroluminescent device according to the present invention. Referring to fig. 1, the high-contrast organic electroluminescent device includes a metal electrode 101, an electron injection layer 102, an electron transport layer 103, a light emitting layer 104, a hole transport layer 105, a hole injection layer 106, an ITO substrate 107 and an optical film 108, which are sequentially disposed from inside to outside;
the metal electrode 101 is a cathode for generating electrons; the electron injection layer 102 is used for injecting the electrons from the metal electrode 101 into the electron transport layer 103; the electron transport layer 103 is used for transporting the electrons to the light emitting layer 104; the light-emitting layer 104 is a recombination region of the electrons and the holes and is used for recombination light emission of carriers; the hole transport layer 105 is used for transporting the holes to the light emitting layer 104; the hole injection layer 106 is used for injecting the holes from the metal electrode 101 into the hole transport layer 105; the ITO substrate 107 is a substrate and is used for evaporating the optical film 108; the optical film 108 is provided with the same light emitting material as the light emitting layer 104 for absorbing visible light having a wavelength smaller than that of light emitted from the light emitting layer 104. The thickness of the optical film 108 is 200-400 nm, the optical film 108 cannot be too thick or block light, or cannot be too thin or achieve a good effect, and when the thickness is 200-400 nm, the optical film 108 can better absorb other interference light except light emitted by the device in external environment light on the basis of ensuring that the light emitted by the device has high transmittance, and simultaneously transmit the same visible light as the light emitted by the device in the external environment light, so that the contrast of the light emitted by the device can be effectively increased, and the high-contrast light emission of the device is ensured; the material of the optical film 108 includes DCJTB ((E) -4-dinitrilemethylene-2-tert-butyl-6- (1,1,7, 7-tetramethyljulolidinyl) pyran, 4- (Dicyanomethylene) -2-tert-butyl-6- (1,1,7,7-tetramethyljulolidin-4-yl-vinyl) -4H-pyran, C30H35N30)。
The thicknesses of the electron injection layer 102, the electron transport layer 103, the light emitting layer 104, the hole transport layer 105 and the hole injection layer 106 are all 10-40 nm; the material of the electron injection layer 102 includes 8-hydroxyquinoline-lithium (Liq); the material of the electron transport layer 103The material comprises 8-hydroxyquinoline aluminum (Alq); the material of the light emitting layer 104 includes DCJTB ((E) -4-dinitrilemethylene-2-tert-butyl-6- (1,1,7, 7-tetramethyljulolidinyl) pyran, 4- (Dicyanomethylene) -2-tert-butyl-6- (1,1,7,7-tetramethyljulolidin-4-yl-vinyl) -4H-pyran, C30H35N30) (ii) a The material of the hole transport layer 105 includes 8-hydroxyquinoline aluminum (Alq); the material of the hole injection layer 106 includes an organic semiconductor NPB (N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine).
The thickness of the metal electrode 101 is 100-200 nm, and the material of the metal electrode 101 comprises aluminum (Al).
Fig. 2 is a flowchart of an embodiment of a method for fabricating a high contrast organic electroluminescent device according to the present invention. Referring to fig. 2, the method for preparing the high-contrast organic electroluminescent device includes:
step 201: cleaning the ITO substrate;
this step 201 specifically includes:
adding 50-100 ml of detergent and deionized water into the ITO substrate, and ultrasonically cleaning for 80-100 min;
continuously ultrasonically cleaning the ITO substrate for 80-100 min by using pure deionized water;
continuously ultrasonically cleaning the ITO substrate for 80-100 min by using acetone;
and continuously ultrasonically cleaning the ITO substrate for 80-100 min by using isopropanol to obtain the cleaned ITO substrate.
Step 202: evaporating an optical film on one surface of the cleaned ITO substrate to obtain the ITO substrate evaporated with the optical film;
this step 202 specifically includes:
baking the cleaned ITO substrate for 8-12 min by using a baking lamp, and sequentially putting one surface of the baked ITO substrate and the optical thin film into a vacuum evaporation instrument;
vacuumizing the vacuum evaporation instrument until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5～10- 9mbar；
Starting to heat the optical film until the material evaporation temperature of the optical film is reached;
and starting evaporation, and controlling the evaporation rate and the thickness of the material of the optical film by using a crystal oscillator of the vacuum evaporation instrument, wherein the evaporation rate of the material of the optical film is 0.1-0.2 nm/s, and the evaporation thickness is 200-400 nm, so that the ITO substrate evaporated with the optical film is obtained.
Step 203: sequentially evaporating a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a metal electrode on the non-evaporated surface of the ITO substrate evaporated with the optical film to obtain the high-contrast organic electroluminescent device;
this step 203 specifically includes:
putting the non-evaporation surface of the ITO substrate evaporated with the optical thin film into a vacuum evaporation instrument, and sequentially putting a material of a hole injection layer, a material of a hole transport layer, a material of a luminescent layer, a material of an electron transport layer, a material of an electron injection layer and a material of a metal electrode;
vacuumizing the vacuum evaporation instrument until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5～10- 9mbar；
Heating the material of the hole injection layer to an evaporation temperature, and evaporating the material of the hole injection layer; heating the material of the hole transport layer to an evaporation temperature, and evaporating the material of the hole transport layer; heating the material of the luminous layer to an evaporation temperature, and evaporating the material of the luminous layer; heating the material of the electron transport layer to an evaporation temperature, and evaporating the material of the electron input layer; heating the material of the electron injection layer to an evaporation temperature, and evaporating the material of the electron injection layer; controlling the evaporation rate and the thickness of the material of the hole injection layer, the material of the hole transport layer, the material of the luminescent layer, the material of the electron transport layer and the material of the electron injection layer by a crystal oscillator of a vacuum evaporation instrument; the evaporation rates of the material of the hole injection layer, the material of the hole transport layer, the material of the luminescent layer, the material of the electron transport layer and the material of the electron injection layer are all 0.06-0.12 nm/s, the evaporation thicknesses of the material of the hole injection layer, the material of the hole transport layer, the material of the luminescent layer and the material of the electron transport layer are all 10-40 nm, and the evaporation thickness of the material of the electron injection layer is 1-5 nm;
and continuously heating and evaporating the material of the metal electrode, and controlling the evaporation rate and the thickness of the material of the metal electrode through a crystal oscillator of a vacuum evaporation instrument, wherein the evaporation rate of the material of the metal electrode is 0.5-2 nm/s, and the evaporation thickness is 100-200 nm, so that the high-contrast organic electroluminescent device is obtained.
The following will describe in detail the method for fabricating the high-contrast organic electroluminescent device of the present invention by taking the high-contrast red light device as an example.
Firstly, cleaning an ITO substrate;
adding 50-100 ml of detergent and deionized water into the ITO substrate, and ultrasonically cleaning for 80-100 min; continuously ultrasonically cleaning the ITO substrate for 80-100 min by using pure deionized water; continuously ultrasonically cleaning the ITO substrate for 80-100 min by using acetone; and continuously ultrasonically cleaning the ITO substrate for 80-100 min by using isopropanol to obtain the cleaned ITO substrate.
Secondly, preparing an optical film;
baking the cleaned ITO substrate for 8-12 min by using a baking lamp, and baking one surface of the baked ITO substrate and DCJTB ((E) -4-dinitrile methylene-2-tert-butyl-6- (1,1,7, 7-tetramethyl-julolidine vinyl) pyran, 4- (dicyanothylene) -2-tert-butyl-6- (1,1,7,7-tetramethyl julolidine-4-yl-vinyl) -4H-p-yran and C-tetramethyljulolidine-4-yl-vinyl) -4H-p-yran which only transmits red light (the wavelength is 550-780 nm) and absorbs light with the wavelength less than 550nm30H35N30) Sequentially putting the materials into a vacuum evaporation instrument; the DCJTB material adopted by the optical film is consistent with the DCJTB material of the luminescent layer, so that the DCJTB material can better absorb other interference light except red light in the external environment light on the basis of ensuring that the red light emitted by the luminescent layer has high transmittance (since the wavelength range of the red light is 550-780 nm, a layer of DCJTB optical film can absorb visible light except the red light, the wavelength range of the visible light is 380-780 nm, and the optical film can absorb light with the wavelength less than 550nm, such as green light)Other interference light (including green light) except the red light is completely absorbed, green light which has the largest interference to the red light is filtered, and the red light in the external environment light penetrates through the optical film to enter the device and is converged with the red light emitted by the device, so that the red light emitted by the device is obviously enhanced, and high-contrast light emission of the red light is ensured.
Vacuumizing the vacuum evaporation instrument until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5～10- 9mbar；
Starting heating DCJTB until reaching the material evaporation temperature of DCJTB;
and starting evaporation, controlling the evaporation rate and the thickness of the DCJTB material by using the crystal oscillator of the vacuum evaporation instrument, wherein the evaporation rate of the DCJTB material is 0.1-0.2 nm/s, and the evaporation thickness is 200-400 nm, so as to obtain the ITO substrate evaporated with the DCJTB optical thin film.
Thirdly, preparing a red light device with high integral contrast;
depositing organic semiconductors NPB (N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine), 8-hydroxyquinoline aluminum (Alq), DCJTB ((E) -4-dinitrile methylene-2-tert-butyl-6- (1,1,7, 7-tetramethyl-julolidine vinyl) pyran, 4- (Dicyanomethylene) -2-tert-butyl-6- (1,1,7, 7-tetramethyl-julolidine-4-yl-vinyl) -4H-p yran and C on the non-deposition surface of the ITO substrate deposited with the DCJTB optical thin film30H35N30) 8-hydroxyquinoline aluminum (Alq), 8-hydroxyquinoline-lithium (Liq) and aluminum (Al);
putting the non-evaporation surface of the ITO substrate evaporated with the optical thin film into a vacuum evaporation instrument, and sequentially putting a material (an organic semiconductor NPB) of a hole injection layer, a material (8-hydroxyquinoline aluminum) of a hole transport layer, a material (DCJTB) of a light-emitting layer, a material (8-hydroxyquinoline aluminum) of an electron transport layer, a material (8-hydroxyquinoline-lithium) of an electron injection layer and a material (aluminum) of a metal electrode;
vacuumizing the vacuum evaporation instrument until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5～10- 9mbar；
Heating the organic semiconductor NPB to an evaporation temperature, and evaporating the organic semiconductor NPB; heating 8-hydroxyquinoline aluminum to an evaporation temperature, and evaporating 8-hydroxyquinoline aluminum; heating DCJTB to an evaporation temperature, and evaporating DCJTB; heating 8-hydroxyquinoline aluminum to an evaporation temperature, and evaporating 8-hydroxyquinoline aluminum; heating 8-hydroxyquinoline-lithium to an evaporation temperature, and evaporating 8-hydroxyquinoline-lithium; the evaporation rates and thicknesses of organic semiconductors NPB, 8-hydroxyquinoline aluminum, DCJTB, 8-hydroxyquinoline aluminum and 8-hydroxyquinoline-lithium are sequentially controlled by a crystal oscillator of a vacuum evaporation instrument, the evaporation rates are all 0.06-0.12 nm/s, the evaporation thicknesses of the materials except 8-hydroxyquinoline-lithium are 1-5 nm, and the evaporation thicknesses of the other materials are all 10-40 nm; the evaporation thickness of the organic semiconductor NPB is 20-35 nm, the evaporation thickness of 8-hydroxyquinoline aluminum (Alq) is 12-24 nm, DCJTB with the mass concentration of 2% -8% is doped and evaporated in the organic semiconductor NPB, and the doping and evaporation process is a mature process at present, namely, a material (8-hydroxyquinoline aluminum) of a hole transport layer and a material (DCJTB) of a light emitting layer are doped and evaporated, and then 8-hydroxyquinoline aluminum (Alq) with the thickness of 26-33 nm and 8-hydroxyquinoline-lithium (Liq) with the thickness of 1-5 nm are evaporated.
And continuously heating and evaporating aluminum (Al), and controlling the evaporation rate and the thickness of the aluminum (Al) through a crystal oscillator of a vacuum evaporation instrument, wherein the evaporation rate of the aluminum (Al) is 0.5-2 nm/s, and the evaporation thickness is 100-200 nm, so that the high-contrast red light device is obtained, and the schematic overall structure diagram of the high-contrast red light device prepared by the method is shown in fig. 3. The DCJTB optical film which is the same as the luminescent layer luminescent material is adopted by the red light device with high contrast, green light which has the largest interference to the red light is filtered, the red light in the external environment light penetrates through the optical film to enter the device and is converged with the red light emitted by the device, so that the red light emitted by the device is obviously enhanced, the high-contrast luminescence of the red light is ensured, and the effect is very obvious.
The high-contrast organic electroluminescent device and the preparation method thereof disclosed by the invention are not limited to the high-contrast red light device and the preparation method thereof in the above embodiments, and the evaporation method adopted is not limited to the evaporation method, and can be a spin coating method, a printing method or the like. The organic electroluminescent device with high contrast and the preparation method thereof can be used for preparing various visible light devices with high contrast, and can absorb other interference light except the light emitted by the device in the external environment light on the basis of ensuring that the light emitted by the device has high transmittance by arranging the optical film which is the same as the light emitting material of the light emitting layer, thereby reducing the interference of the environment light, ensuring the high-contrast light emission of the device, not influencing the overall performance of the organic electroluminescent device, being matched with the organic electroluminescent device and reducing the volume of the overall device. The organic electroluminescent device with high contrast disclosed by the invention is applied to the automobile tail lamp, so that the problems that the conventional automobile tail lamp needs to additionally add a light shield accessory outside the light-emitting device to reduce the interference of external environment light, the preparation cost is increased, the size of the whole device is increased, the light shield shields part of emitted light of the device, and the contrast of each visual angle is non-uniform are avoided. The invention discloses a high-contrast organic electroluminescent device, which is characterized in that a layer of optical film which is the same as a luminescent material of a luminescent layer is added outside the organic electroluminescent device and is used for absorbing visible light with the wavelength which is less than that of the luminescent layer, the optical film which is the same as the luminescent material of the luminescent layer is adopted, on the basis of ensuring that the luminescent light of the device has high transmittance, other interference light except the light emitted by the device in the external environment light is absorbed, so that the interference of the environment light is reduced, the high-contrast luminescence is ensured, the integral performance of the organic electroluminescent device is not influenced, the problem that the contrast of the traditional organic electroluminescent device is low under the interference of the environment light is solved, the organic electroluminescent device can be matched with the organic electroluminescent device, the weight and the volume of the integral device are reduced, and the high-contrast organic electroluminescent device disclosed by the invention is applied to an automobile tail lamp, the interference of external environment light on visual observation can be reduced, the wide angle of the organic tail lamp device and the high-quality characteristics of high-contrast luminescence and the like are ensured, a light shield does not need to be arranged outside the luminescent device, and the weight and the volume of the whole device are favorably reduced.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The method disclosed by the embodiment corresponds to the system disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the system part for description.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (8)
1. An organic electroluminescent device with high contrast is characterized by comprising a metal electrode, an electron injection layer, an electron transport layer, a luminescent layer, a hole transport layer, a hole injection layer, an ITO substrate and an optical film which are sequentially arranged from inside to outside;
the metal electrode is a cathode and is used for generating electrons; the electron injection layer is used for injecting the electrons from the metal electrode into the electron transport layer; the electron transport layer is used for transporting the electrons to the light emitting layer; the light-emitting layer is a recombination region of the electrons and the holes and is used for the recombination luminescence of carriers; the hole transport layer is used for transporting the holes to the light emitting layer; the hole injection layer is used for injecting the holes from the metal electrode into the hole transport layer; the ITO substrate is used for evaporating the optical film; the optical film is provided with a luminescent material which is the same as the luminescent layer and is used for absorbing visible light with the wavelength less than that of the light emitted by the luminescent layer; the thickness of optical film is 200 ~ 400nm, optical film's thickness can not be too thick otherwise can be in the light, also can not play good effect if can not be too thin otherwise, when thickness is 200 ~ 400nm, optical film can be on the basis of guaranteeing that device light emission has high transmissivity, other interference light except that device light emission is removed in the better absorption external environment light, and the same visible light of device light emission can effectually be increaseed in the external environment light to the while seeing through, and the contrast that can effectual increaseed device light emission, the high contrast of assurance device is luminous.
2. The high-contrast organic electroluminescent device according to claim 1, wherein the material of the optical thin film comprises DCJTB.
3. The high-contrast organic electroluminescent device according to claim 1, wherein the electron injection layer, the electron transport layer, the light-emitting layer, the hole transport layer and the hole injection layer each have a thickness of 10 to 40 nm; the material of the electron injection layer comprises 8-hydroxyquinoline-lithium; the material of the electron transport layer comprises 8-hydroxyquinoline aluminum; the material of the luminescent layer comprises DCJTB; the material of the hole transport layer comprises 8-hydroxyquinoline aluminum; the material of the hole injection layer includes an organic semiconductor NPB.
4. The high-contrast organic electroluminescent device according to claim 1, wherein the thickness of the metal electrode is 100 to 200nm, and the material of the metal electrode comprises aluminum.
5. A method for preparing the high-contrast organic electroluminescent device according to claim 1, comprising:
cleaning the ITO substrate;
evaporating an optical film on one surface of the cleaned ITO substrate to obtain the ITO substrate evaporated with the optical film; the thickness of the optical film is 200-400 nm, the optical film cannot be too thick or block light, or cannot be too thin or achieve a good effect, when the thickness is 200-400 nm, the optical film can better absorb other interference light except the light emitted by the device in the external environment light on the basis of ensuring that the light emitted by the device has high transmittance, and simultaneously can effectively increase the contrast of the light emitted by the device and ensure the high-contrast light emission of the device by transmitting the visible light which is the same as the light emitted by the device in the external environment light;
and sequentially evaporating a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a metal electrode on the non-evaporated surface of the ITO substrate evaporated with the optical film to obtain the high-contrast organic electroluminescent device.
6. The method according to claim 5, wherein the cleaning of the ITO substrate specifically comprises:
adding 50-100 ml of detergent and deionized water into the ITO substrate, and ultrasonically cleaning for 80-100 min;
continuously ultrasonically cleaning the ITO substrate for 80-100 min by using pure deionized water;
continuously ultrasonically cleaning the ITO substrate for 80-100 min by using acetone;
and continuously ultrasonically cleaning the ITO substrate for 80-100 min by using isopropanol to obtain the cleaned ITO substrate.
7. The method according to claim 5, wherein the step of depositing the optical thin film on one surface of the cleaned ITO substrate to obtain the ITO substrate deposited with the optical thin film comprises:
baking the cleaned ITO substrate for 8-12 min by using a baking lamp, and sequentially putting one surface of the baked ITO substrate and the optical thin film into a vacuum evaporation instrument;
vacuumizing the vacuum evaporation instrument until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5～10-9mbar；
Starting to heat the optical film until the material evaporation temperature of the optical film is reached;
and starting evaporation, and controlling the evaporation rate and the thickness of the material of the optical film by using a crystal oscillator of the vacuum evaporation instrument, wherein the evaporation rate of the material of the optical film is 0.1-0.2 nm/s, and the evaporation thickness is 200-400 nm, so that the ITO substrate evaporated with the optical film is obtained.
8. The preparation method according to claim 5, wherein the step of sequentially evaporating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a metal electrode on the non-evaporated surface of the ITO substrate evaporated with the optical thin film to obtain the high-contrast organic electroluminescent device specifically comprises the steps of:
putting the non-evaporation surface of the ITO substrate evaporated with the optical thin film into a vacuum evaporation instrument, and sequentially putting a material of a hole injection layer, a material of a hole transport layer, a material of a luminescent layer, a material of an electron transport layer, a material of an electron injection layer and a material of a metal electrode;
vacuumizing the vacuum evaporation instrument until the vacuum degree in the vacuum evaporation instrument is reduced to 10-5～10-9mbar；
Heating the material of the hole injection layer to an evaporation temperature, and evaporating the material of the hole injection layer; heating the material of the hole transport layer to an evaporation temperature, and evaporating the material of the hole transport layer; heating the material of the luminous layer to an evaporation temperature, and evaporating the material of the luminous layer; heating the material of the electron transport layer to an evaporation temperature, and evaporating the material of the electron transport layer; heating the material of the electron injection layer to an evaporation temperature, and evaporating the material of the electron injection layer; controlling the evaporation rate and the thickness of the material of the hole injection layer, the material of the hole transport layer, the material of the luminescent layer, the material of the electron transport layer and the material of the electron injection layer by a crystal oscillator of a vacuum evaporation instrument; the evaporation rates of the material of the hole injection layer, the material of the hole transport layer, the material of the luminescent layer, the material of the electron transport layer and the material of the electron injection layer are all 0.06-0.12 nm/s, the evaporation thicknesses of the material of the hole injection layer, the material of the hole transport layer, the material of the luminescent layer and the material of the electron transport layer are all 10-40 nm, and the evaporation thickness of the material of the electron injection layer is 1-5 nm;
and continuously heating and evaporating the material of the metal electrode, and controlling the evaporation rate and the thickness of the material of the metal electrode through a crystal oscillator of a vacuum evaporation instrument, wherein the evaporation rate of the material of the metal electrode is 0.5-2 nm/s, and the evaporation thickness is 100-200 nm, so that the high-contrast organic electroluminescent device is obtained.
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