CN109524033A - Optical-fiber network towards dynamic RAM and nonvolatile memory mixing main memory - Google Patents
Optical-fiber network towards dynamic RAM and nonvolatile memory mixing main memory Download PDFInfo
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- CN109524033A CN109524033A CN201811487205.1A CN201811487205A CN109524033A CN 109524033 A CN109524033 A CN 109524033A CN 201811487205 A CN201811487205 A CN 201811487205A CN 109524033 A CN109524033 A CN 109524033A
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Abstract
The invention discloses a kind of optical-fiber network towards dynamic RAM and nonvolatile memory mixing main memory, mainly solves that communication delay in the prior art is high, and concurrency difference and efficiency are low, and the problem of can not flexibly support a variety of mixing main storage systems.It includes n calculate node, i random access memory controller module, k dynamic RAM DRAM module, m nonvolatile memory NVM module and a communication subnet.The communication subnet meter is made of vertical optical waveguide, ring optical waveguide, narrowband micro-ring resonator and broadband micro-ring resonant, realize the parallel communications between Memory control module and dynamic RAM DRAM module and nonvolatile memory NVM module, by rational deployment optical waveguide and micro-ring resonator in communication subnet, realize that repetition and Lothrus apterus of the Same Wavelength in Different lightwave is led utilize.Present invention reduces time delays, improve concurrency, the communication that can be used between computing system and storage system.
Description
Technical field
The invention belongs to Computers and Communication technical field, in particular to a kind of optical-fiber network framework for mixing main memory can be used
Communication between computing system and storage system.
Background technique
With the rapid development of information technology, computer field oneself enter data-centered big data era, number
New opportunities and challenge are brought to computer hosting system according to the rapid growth of scale.On the one hand, traditional calculator memory master
It to be based on dynamic RAM DRAM, it is small etc. excellent to possess read or write speed fast, technology maturation, long service life and cost overhead
Gesture, but with the reduction of manufacture craft, scalability, capacity, reliability and in terms of have reached bottleneck.It is another
Aspect, novel non-volatile memories NVM technology reach its maturity, it is non-volatile with data, storage density is high, without refresh,
Low energy consumption and it is anti-radiation the advantages that, bring technological change for computer hosting System Design, be expected to break through existing main memory
Framework realizes high performance data storage.But non-volatile memories NVM is also faced with reading and writing data asymmetry, write operation performance
The problems such as difference, at high cost and service life is short, can not also substitute existing dynamic RAM DRAM completely at present.Therefore,
Have become computer with the high performance main memory that mixes of dynamic RAM DRAM advantageous design in conjunction with non-volatile memories NVM
The key technology of main storage system.
Current mixing main storage system is broadly divided into mixing main storage system at the same level and mixes two class of main storage system with multistage, at the same level
Mixing storage system refers to that at the same level be distributed collectively forms main memory between dynamic RAM DRAM and non-volatile memories NVM,
Multistage mixing main storage system refers to dynamic RAM DRAM as the cache of non-volatile memories NVM or writes slow
Punching, non-volatile memories NVM is as main storage.Dynamic RAM DRAM is deposited with non-volatile in main storage system at the same level
There is no a communication requirement between storage NVM, and in multistage mixing main storage system there are dynamic RAM DRAM with it is non-volatile
Store the communication between NVM.Network at present towards mixing main storage system is mixed due to configuring the not flexible support peer that is often only capable of
One of main storage system and multistage mixing main storage system are closed, cannot achieve while supporting.Therefore, design can be supported flexibly together
Grade mixing main storage system meets its communication requirement with the memory access interference networks that multistage mixes main storage system and has become network design
One of target.
Meanwhile it mixing the communicating off-chip in main memory between computing system and main storage system and facing electrical interconnection long distance transmission
The limitation of the factors such as bandwidth, time delay, power consumption.Light network can effectively break the performance limit that long distance transmission between piece is electrically interconnected in tradition
System, provides higher bandwidth density, smaller communication delay and lower system power dissipation, effectively promotes computing system and main memory
Intersystem communications performance.Therefore, it designs the optical interconnection network framework towards mixing main storage system and has become promotion computing system
With the key of main storage system communication performance.
Currently, effectively supporting to calculate how by the layout designs of the optical devices such as reasonable optical waveguide and micro-ring resonator
Memory access communicates between system and mixing main storage system, meets different mixing main storage system communication requirements, how to pass through reasonable wavelength
Allocation plan reduces the wavelength resource expense in expansibility of network size, improves the time delay of network, concurrency and scalability, is mesh
The preceding main research for carrying out the optical interconnection network architecture design towards mixing main storage system.
Application publication number is CN103455283A, and the patent application of entitled " a kind of mixing storage system " discloses one
Kind, which is made of N number of memory with a controller, mixes storage system.The embodiment of the mixing storage system is: depositing N number of
It is linked between reservoir and a controller by being electrically interconnected, controller initiative recognition access request type and can carry out channel choosing
It selects, realizes the communication between different hosts and different memory.The mixing storage system is due to mixing storage with N number of using controller
The electrical interconnection of long range between device piece, it is high to will lead to mixing storage system communication delay, and efficiency is low with concurrency difference problem, in addition,
Since it uses N number of memory peer to be distributed and do not interconnect between each memory, it is caused only to support mixing storage at the same level
System, and can not support multistage mixing storage system.
Application publication number is CN106909323A, entitled " the caching of page side suitable for DRAM/PRAM mixing main memory framework
The patent application of method and mixing main memory architecture system " discloses a kind of by dynamic RAM DRAM and phase-change random access storage
Device PRAM constitutes mixing main memory framework, and phase-change random access memory PRAM is one of nonvolatile memory NVM, the mixing
The embodiment of main memory framework is: leading between storage control and dynamic RAM DRAM and phase-change random access memory PRAM
It crosses the electrical interconnection based on bus type to be attached, realizes different processor unit and Different Dynamic random access memory DRAM and phase transformation
Memory access communication between random access memory PRAM.Its due to using storage control and dynamic RAM DRAM and phase transformation with
Long range between machine memory PRAM is electrically interconnected, and will lead to and closes main memory framework communication delay height, the low deficiency of efficiency, while by
It is interconnected in using bus type between storage control and memory, leads to the problem of main memory framework concurrency difference, further, since its
It is distributed using dynamic RAM DRAM and phase-change random access memory PRAM peer, does not interconnect, cause between two class memories
It can only support main memory architecture system at the same level, and can not support multistage mixing main storage system.
Summary of the invention
It is an object of the invention in view of the deficiency of the prior art, propose one kind towards dynamic RAM
Concurrency and efficiency are improved with the optical-fiber network of nonvolatile memory mixing main memory to reduce communication delay.
To achieve the above object, light net of the present invention towards dynamic RAM and nonvolatile memory mixing main memory
Network, comprising:
N calculate node, i random access memory controller module, k dynamic RAM DRAM module, m are non-volatile to be deposited
Reservoir NVM module and a communication subnet, n > 0, n >=i > 0, k > 0, m > 0 and n, i, k, m are integer；The communication subnet,
It includes ring optical waveguide, vertical optical waveguide, narrowband micro-ring resonator and broadband micro-ring resonator, it is characterised in that:
The n calculate node, is divided into i cluster, and each cluster is connect with a random access memory controller module；
The ring optical waveguide is set as k+m root, is scattered in radius concentrically nested ring incremented by successively, and ecto-entad marks
For W1To Wk+m；
The vertical optical waveguide is set as (k+m) × 2i+ (1+m) × 2k+2m root, wherein (k+m) × 2i root and i memory
Controller module connection, (1+m) × 2k root connect with k dynamic RAM DRAM module, and 2m root and m are a non-volatile to be deposited
The connection of reservoir NVM module；
The narrowband micro-ring resonator is set as (k+m) × 2i+2km；
The broadband micro-ring resonator is set as 2k+2m；
Each module in the i random access memory controller module, output port optical waveguide vertical with k+m root are connect, according to
Secondary label is1To Lk+m, the L1To Lk+mSuccessively with W1To Wk+mRoot ring optical waveguide is vertically connected, and is intersected vertically a little each
Upper left side place a narrowband micro-ring resonator (53), input port optical waveguide vertical with k+m root connect, is successively labeled as
Lk+m+1To L2k+2m, the Lk+m+1To L2k+2mSuccessively with W1To Wk+mRoot ring optical waveguide is vertically connected, and is intersected vertically a little each
Upper right side place a narrowband micro-ring resonator；
The k dynamic RAM DRAM module is successively labeled as D1To Dk, each module is equipped with an output port
With an input port,
Output port optical waveguide vertical with m+1 root is connected, and the vertical optical waveguide of m+1 root is successively labeled as LD1Extremely
LD m+1, the LD2To LD m+1The vertical optical waveguide of root successively with Wk+1To Wk+mRoot ring optical waveguide is vertically connected, and in each vertical phase
Place a narrowband micro-ring resonator, D in the upper left side of intersection point1To DkThe k root that a dynamic RAM DRAM module is connected
LD1Vertical optical waveguide successively with W1To WkRoot ring optical waveguide is vertically connected, and places one on each upper left side to intersect vertically a little
A wide micro-ring resonator；
Input port optical waveguide vertical with m+1 root is connect, and the vertical optical waveguide of m+1 root is successively labeled as LD m+2Extremely
LD 2m+2, the LD m+3To LD 2m+2The vertical optical waveguide of root successively with Wk+1To Wk+mRoot ring optical waveguide is vertically connected, and is hung down each
Place a narrowband micro-ring resonator, D in the upper right side of straight crosspoint1To DkThe k that a dynamic RAM DRAM module is connected
Root LD m+2Vertical optical waveguide successively with W1To WkRoot ring optical waveguide is vertically connected, and is put in each upper right side to intersect vertically a little
Set a wide micro-ring resonator；
The m nonvolatile memory NVM module is successively labeled as N1To Nm, the output port of each module and 1 are hung down
Direct light waveguide connection, and the vertical optical waveguide is labeled as LN1, N1To NmThe m that a nonvolatile memory NVM module is connected
Root LN1Vertical optical waveguide successively with Wk+1To Wk+mRoot ring optical waveguide vertically connects, and puts on each upper left side to intersect vertically a little
Set a broadband micro-ring resonator；The input port of each module optical waveguide vertical with 1 is connect, and by the vertical optical waveguide mark
It is denoted as LN2, N1To NmThe m root L that root nonvolatile memory NVM module (4) is connectedN2Vertical optical waveguide successively with Wk+1To Wk+m
Ring optical waveguide root vertically connects, and places a broadband micro-ring resonator in each upper right side to intersect vertically a little.
Compared with prior art, the present invention having the advantage that
First, since the present invention connects a Memory Controller Hub using calculate node to be divided into different clusters, each cluster
Communication between module, with dynamic RAM DRAM module and nonvolatile memory NVM module passes through based on multiple
The communication subnet that concentrically nested ring optical waveguide, vertical optical waveguide and micro-ring resonator are constituted is realized, supports different computer sections
Parallel communications between point cluster and different memory modules, when can be effectively reduced the communication between calculate node cluster and memory module
Prolong, promotes the concurrency communicated between calculate node cluster and memory module, and then improve the efficiency of network.
Second, due to, using multiple nested ring optical waveguides, reasonable employment and distribution micro-ring resonant, being realized same in the present invention
The repetition and Lothrus apterus that one wavelength is led in Different lightwave utilize, and effectively reduce in network in conjunction with computer node sub-clustering mode
Micro-ring resonator uses number, while reducing the expense of network medium wavelength resource, and then improve the scalability of network.
Third, due in communication subnet, being deposited for dynamic RAM DRAM module with non-volatile in the present invention
It is also provided with corresponding micro-ring resonator, ring optical waveguide and vertical optical waveguide between reservoir NVM module, and is assigned with proprietary humorous
Vibration wave is long, meets the communication requirement between dynamic RAM DRAM module and nonvolatile memory NVM module, realization pair
Peer's mixing main storage system mixes effective support of main storage system with multistage.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the random access memory controller module block diagram in the present invention；
Fig. 3 is the dynamic RAM DRAM module block diagram in the present invention；
Fig. 4 is nonvolatile memory NVM module block diagram in the present invention；
Fig. 5 is the communication subnet schematic diagram in the present invention.
Specific embodiment
In the following with reference to the drawings and specific embodiments, present invention is further described in detail.
Optical-fiber network of the invention includes: n calculate node 1, i random access memory controller module 2, k dynamic RAM
DRAM module 3, m nonvolatile memory NVM module 4 and a communication subnet 5, n > 0, n >=i > 0, k > 0, m > 0, and
N, i, k, m are integer.This example takes but is not limited to n=8, i=4, k=2, m=2.
Referring to Fig.1, eight random access memory controller modules 2, two of calculate node 1, four included by the present embodiment optical-fiber network
3, two nonvolatile memory NVM modules 4 of dynamic RAM DRAM module and a communication subnet 5, structural relation
It is as follows:
Eight calculate nodes 1 are divided into four calculate node clusters, i.e. every two calculate node constitutes a calculate node
Cluster, each calculate node cluster are connected with a random access memory controller module 2, and between two in cluster calculate node, and every
Short distance between a calculate node cluster and random access memory controller module 2 is by being electrically interconnected connection, and each calculate node is for inside
Memory controller module 2 send access request, while receive, handle and stored memory controller module 2 return data；In four
Between memory controller module 2 and two dynamic RAM DRAM modules 3 and two nonvolatile memory NVM modules 4
Pass through the light network connection of a communication subnet 5 over long distances；
The communication subnet 5, including ring optical waveguide 51, vertical optical waveguide 52, narrowband micro-ring resonator 53 and broadband are micro-
Ring resonator 54, in which:
The ring optical waveguide 51 is set as four, is scattered in radius concentrically nested ring incremented by successively, and ecto-entad marks
For W1,W2,W3,W4；
The vertical optical waveguide 52 is set as 48, wherein 32 vertical optical waveguides 52 and four Memory Controller Hub
Module 2 connects, and 12 vertical optical waveguides 52 are connect with two dynamic RAM DRAM modules 3, four vertical optical waveguides
52 connect with two nonvolatile memory NVM modules 4；
The narrowband micro-ring resonator 53 is set as 40, and each narrowband micro-ring resonator 53 has single resonance wavelength, uses
In the optical signal for coupling corresponding resonance wavelength；
The broadband micro-ring resonator 54 is set as eight, and each broadband micro-ring resonator 54 has multiple resonance wavelengths, is used for
Couple the optical signal of corresponding multiple resonance wavelengths.
Referring to Fig. 2, the random access memory controller module 2, including memory control unit 21, wavelength control unit 22, modulation list
Member 23 and demodulating unit 24；
The memory control unit 21, for handling the access request from calculate node 1；While and wavelength control
Unit 22, demodulating unit 23 and modulation unit 24 are communicated；
The wavelength control unit 22, for receiving the data of memory control unit 21, and according to Wavelength Assignment table to data
It is handled, sends wavelength control signal to modulation unit 23；
The modulation unit 23 is the output port of random access memory controller module 2, for what is sent according to wavelength control unit 22
The electric signal that memory control unit 21 is sent is modulated to the optical signal of corresponding wavelength by wavelength control signal；
The demodulating unit 24 is the input port of random access memory controller module 2, for by the optical signal in ring optical waveguide 52
It is demodulated into the received electric signal of memory control unit 21.
Referring to Fig. 3, the dynamic RAM DRAM module 3 include: dynamic RAM DRAM memory cell 31,
Wavelength control unit 32, modulation unit 33 and demodulating unit 34；
The dynamic RAM DRAM memory cell 31, for storing data, and meanwhile it is single with demodulating unit 33 and modulation
Member 34 is communicated；
The wavelength control unit 32 carries out data for receiving the data of demodulating unit 33, and according to Wavelength Assignment table
Processing sends wavelength control signal to modulation unit 33；
The modulation unit 33 is the output port of dynamic RAM DRAM module 3, for according to wavelength control unit
The electric signal that dynamic RAM DRAM memory cell 31 is sent is modulated to corresponding wavelength by 32 wavelength control signals sent
Optical signal；
The demodulating unit 34 is the input port of dynamic RAM DRAM module 3, and being used for will be in ring optical waveguide 52
Optical signal demodulation be the received electric signal of dynamic RAM DRAM memory cell 31.
Referring to Fig. 4, the nonvolatile memory NVM module 4 includes: nonvolatile memory NVM storage unit 41, wave
Long control unit 42, modulation unit 43 and demodulating unit 34；
Nonvolatile memory NVM storage unit 41, for storing data, while with demodulating unit 43 and modulation unit
44 are communicated；
The wavelength control unit 42 carries out data for receiving the data of demodulating unit 43, and according to Wavelength Assignment table
Processing sends wavelength control signal to modulation unit 33；
The modulation unit 43 is the output port of nonvolatile memory NVM module 4, for according to wavelength control unit
The electric signal that nonvolatile memory NVM storage unit 41 is sent is modulated to corresponding wavelength by 32 wavelength control signals sent
Optical signal；
The demodulating unit 44 is the input port of nonvolatile memory NVM module 4, and being used for will be in ring optical waveguide 52
Optical signal demodulation be the received electric signal of nonvolatile memory NVM storage unit 41.
48 vertical optical waveguides 52 referring to Fig. 5, in the communication subnet, in which:
32 vertical optical waveguides 52 are connect with four random access memory controller modules 2, i.e., with each random access memory controller module 2
The vertical optical waveguide 52 of connection has eight, wherein four are connected with the output port in random access memory controller module 2, four and memory
Input in controller module 2 is connected；
12 vertical optical waveguides 52 are connect with two dynamic RAM DRAM modules 3, i.e., with each dynamic random
The vertical optical waveguide 52 that DRAM memory module 3 connects has the six roots of sensation, wherein three defeated with dynamic RAM DRAM module 3
Exit port is connected, and three are connected with the input port of dynamic RAM DRAM module 3；
Four vertical optical waveguides 52 are connect with two nonvolatile memory NVM modules 4, i.e., each nonvolatile memory
NVM module 4 connect vertical optical waveguide 52 have two, wherein one with the output port in nonvolatile memory NVM module 4
It is connected, one is connected with the input port in nonvolatile memory NVM module 4；
Its specific connection relationship is as follows:
Four vertical optical waveguides 52 being connected with 2 output port of random access memory controller module are successively labeled as L1To L4, should
L1To L4Successively with W1To W4Root ring optical waveguide 51 is vertically connected, and one narrow in each upper left side placement to intersect vertically a little
Band micro-ring resonator 53, is transmitted for the optical signal in vertical optical waveguide 52 to be coupled in corresponding ring optical waveguide 51, is realized
Random access memory controller module 2 sends access request to dynamic RAM DRAM module 3 and nonvolatile memory NVM module 4；
Four vertical optical waveguides 52 being connected with 2 output port of random access memory controller module are successively labeled as L5To L8, should
L5To L8Successively with W1To W4Root ring optical waveguide 51 is vertically connected, and one narrow in each upper right side placement to intersect vertically a little
Band micro-ring resonator 53 is transmitted for the optical signal in ring optical waveguide 51 to be coupled in corresponding vertical optical waveguide 52, is realized
Random access memory controller module 2 receives the data that dynamic RAM DRAM module 3 and nonvolatile memory NVM module 4 return；
Three vertical optical waveguides 52 being connected with 3 output port of dynamic RAM DRAM module, are successively labeled as
LD1To LD3, the LD2To LD3The vertical optical waveguide 52 of root successively with W3To W4Root ring optical waveguide 51 is vertically connected, and each vertical
A narrowband micro-ring resonator 53 is placed on the upper left side of crosspoint, for the optical signal in vertical optical waveguide 52 to be coupled to correspondence
It is transmitted in ring optical waveguide 51, realizes that dynamic RAM DRAM module 3 is sent to nonvolatile memory NVM module 4 and visit
Deposit request；
Two dynamic RAM DRAM modules 3 are successively labeled as D1,D2, with D1To D2A dynamic RAM
Two L that 3 output port of DRAM module is connectedD1Vertical optical waveguide 52 successively with W1To W2The vertical phase of root ring optical waveguide 51
Even, and each the one wide micro-ring resonator 54 of upper left side placement to intersect vertically a little, for by the light in vertical optical waveguide 52
Signal, which is coupled in corresponding ring optical waveguide 51, to be transmitted, and realizes dynamic RAM DRAM module 3 to random access memory controller module 2
Return to the data of request；
Three vertical optical waveguides 52 being connected with 3 input port of dynamic RAM DRAM module, are successively labeled as
LD4To LD6, the LD5To LD6The vertical optical waveguide 52 of root successively with W3To W4Root ring optical waveguide 51 is vertically connected, and each vertical
A narrowband micro-ring resonator 53 is placed in the upper right side of crosspoint, for the optical signal in ring optical waveguide 51 to be coupled to correspondence
It is transmitted in vertical optical waveguide 52, realizes that dynamic RAM DRAM module 3 returns to number to nonvolatile memory NVM module 4
According to reception, will be with D1To D2Two L that a 3 input port of dynamic RAM DRAM module is connectedD4Vertical optical waveguide
52 successively with W1To W2Root ring optical waveguide 51 is vertically connected, and places a wide micro-loop in each upper right side to intersect vertically a little
Resonator 54 is transmitted for the optical signal in ring optical waveguide 51 to be coupled in corresponding vertical optical waveguide 52, realize dynamic with
Machine DRAM memory module 3 is to the reception from 2 access request of random access memory controller module；
A piece vertical optical waveguide 52 of 4 output port of nonvolatile memory NVM module connection is labeled as LN1；
Two nonvolatile memory NVM modules 4 are successively labeled as N1,N2, with N1To N2A nonvolatile memory
2 L that 4 output port of NVM module is connectedN1Vertical optical waveguide 52 successively with W3To W3Root ring optical waveguide 51 vertically connects,
And a broadband micro-ring resonator 54 is placed on each upper left side to intersect vertically a little, for the light in vertical optical waveguide 52 to be believed
Number it is coupled in corresponding ring optical waveguide 51 and transmits, realizes nonvolatile memory NVM module 4 to 2 He of random access memory controller module
Dynamic RAM DRAM module 3 returns to the data of request；
A vertical optical waveguide 52 will be connect with 4 input port of nonvolatile memory NVM module labeled as LN2；
It will be with N1To N2Two L that 4 input port of root nonvolatile memory NVM module is connectedN2Vertical optical waveguide 52
Successively with W3To W4Ring optical waveguide 51 vertical connections, and a broadband micro-loop is placed in each upper right side to intersect vertically a little
Resonator 54 is transmitted for the optical signal in ring optical waveguide 51 to be coupled in corresponding vertical optical waveguide 52, is realized non-volatile
Property memory NVM module 4 is to the reception from 3 access request of random access memory controller module 2 and dynamic RAM DRAM module.
40 narrowband micro-ring resonators 53, each of which narrowband micro-ring resonator have single resonance wavelength, use
In the optical signal for coupling corresponding resonance wavelength, it may be assumed that
Positioned at L1Vertical optical waveguide 52 and W1Ring optical waveguide 51 intersect vertically place four narrowband micro-ring resonators 53 it is humorous
Vibration wave length is followed successively by λ1,λ2,λ3,λ4；Positioned at L2Vertical optical waveguide 52 and W2Ring optical waveguide 51 intersects vertically four narrowbands at place
The resonance wavelength of micro-ring resonator 53 sets gradually as λ2,λ3,λ4,λ1；Positioned at L3Vertical optical waveguide 52 and W3Ring optical waveguide 51
The resonance wavelength of four narrowband micro-ring resonators 53 at the place of intersecting vertically is followed successively by λ3,λ4,λ1,λ2；Positioned at L4Vertical optical waveguide 52
With W4The resonance wavelength of four narrowband micro-ring resonators 53 at 51 place of intersecting vertically of ring optical waveguide is followed successively by λ4,λ1,λ2,λ3；Position
In L5Vertical optical waveguide 52 and W1Ring optical waveguide 51 intersect vertically place four narrowband micro-ring resonators 53 resonance wavelength successively
For λ1,λ2,λ3,λ4；Positioned at L6Vertical optical waveguide 52 and W2Ring optical waveguide 51 intersects vertically four narrowband micro-ring resonators at place
53 resonance wavelength is followed successively by λ2,λ3,λ4,λ1；Positioned at L7Vertical optical waveguide 52 and W3Ring optical waveguide 51 intersects vertically the four of place
The resonance wavelength of a narrowband micro-ring resonator 53 sets gradually as λ3,λ4,λ1,λ2；Positioned at L8Vertical optical waveguide 52 and W4Ring light
The resonance wavelength of four narrowband micro-ring resonators 53 at 51 place of intersecting vertically of waveguide sets gradually as λ4,λ1,λ2,λ3；
Positioned at LD2Vertical optical waveguide 52 and W3Ring optical waveguide 51 intersects vertically two narrowband micro-ring resonators 53 at place
Resonance wavelength sets gradually as λ5,λ6；Positioned at LD3Vertical optical waveguide 52 and W4Ring optical waveguide 51 intersects vertically two narrowbands at place
The resonance wavelength of micro-ring resonator 53 sets gradually as λ6,λ5；Positioned at LD5Vertical optical waveguide 52 and W3The vertical phase of ring optical waveguide 51
The resonance wavelength of two narrowband micro-ring resonators 53 at friendship sets gradually as λ5,λ6；Positioned at LD6Vertical optical waveguide 52 and W4Annular
The resonance wavelength of two narrowband micro-ring resonators 53 at 51 place of intersecting vertically of optical waveguide sets gradually as λ6,λ5；
Eight broadband micro-ring resonators 54, each broadband micro-ring resonator 54 have multiple resonance wavelengths, are used for
Couple the optical signal of corresponding multiple resonance wavelengths, it may be assumed that
Positioned at LD1Vertical optical waveguide 52 and W1Ring optical waveguide 51 intersect vertically place broadband micro-ring resonator 54 resonance
Wavelength is λ1To λ4；Positioned at LD4Vertical optical waveguide 52 and W1Ring optical waveguide 51 intersects vertically the broadband micro-ring resonator 54 at place
Resonance wavelength is λ1To λ4；Positioned at LD1Vertical optical waveguide 52 and W2Ring optical waveguide 51 intersects vertically two broadband micro-loops at place
The resonance wavelength of resonator 54 is λ1To λ4；Positioned at LD4Vertical optical waveguide 52 and W2Ring optical waveguide 51 intersects vertically two of place
The resonance wavelength of broadband micro-ring resonator 54 is λ1To λ4；Positioned at LN1Vertical optical waveguide 52 and W3The vertical phase of ring optical waveguide 51
The resonance wavelength of broadband micro-ring resonator 54 at friendship is λ1To λ6；Positioned at LN2Vertical optical waveguide 52 and W3Ring optical waveguide 51 hangs down
The resonance wavelength of the broadband micro-ring resonator 54 of straight intersection is λ1To λ6；Positioned at LN1Vertical optical waveguide 52 and W4Annular light wave
Lead 51 intersect vertically place two broadband micro-ring resonators 54 resonance wavelength be λ1To λ6；Positioned at LN2Vertical optical waveguide 52 and W4
The resonance wavelength of two broadband micro-ring resonators 54 at 51 place of intersecting vertically of ring optical waveguide is λ1To λ6。
Above description is only example of the present invention, does not constitute any limitation of the invention, it is clear that for
It, all may be without departing substantially from the principle of the invention, structure after having understood the content of present invention and principle for one of skill in the art
In the case where, carry out various modifications and change in form and details, but these modifications and variations based on inventive concept
Still within the scope of the claims of the present invention.
Claims (6)
1. a kind of optical-fiber network towards dynamic RAM and nonvolatile memory mixing main memory, comprising:
N calculate node (1), i random access memory controller module (2), k dynamic RAM DRAM module (3), m are a non-easy
The property lost memory NVM module (4) and a communication subnet (5), n > 0, n >=i > 0, k > 0, m > 0 and n, i, k, m are whole
Number；The communication subnet (5) comprising ring optical waveguide (51), vertical optical waveguide (52), narrowband micro-ring resonator (53) and broadband
Micro-ring resonator (54), it is characterised in that:
The n calculate node (1), is divided into i cluster, and each cluster is connect with a random access memory controller module (2)；
The ring optical waveguide (51) is set as k+m root, is scattered in radius concentrically nested ring incremented by successively, and ecto-entad marks
For W1To Wk+m；
The vertical optical waveguide (52) is set as (k+m) × 2i+ (1+m) × 2k+2m root, wherein (k+m) × 2i root and i memory
Controller module (2) connection, (1+m) × 2k root are connect with k dynamic RAM DRAM module (3), and 2m root and m are a non-easy
The property lost memory NVM module (4) connects；
The narrowband micro-ring resonator (53) is set as (k+m) × 2i+2km；
The broadband micro-ring resonator (54) is set as 2k+2m；
Each module in the i random access memory controller module (2), output port optical waveguide (52) vertical with k+m root connect,
Successively it is labeled as L1To Lk+m, the L1To Lk+mSuccessively with W1To Wk+mRoot ring optical waveguide (51) is vertically connected, and each vertical
A narrowband micro-ring resonator (53) is placed on the upper left side of crosspoint, and input port optical waveguide (52) vertical with k+m root connect,
Successively it is labeled as Lk+m+1To L2k+2m, the Lk+m+1To L2k+2mSuccessively with W1To Wk+mRoot ring optical waveguide (51) is vertically connected, and
Place a narrowband micro-ring resonator (53) in the upper right side each to intersect vertically a little；
The k dynamic RAM DRAM module (3) is successively labeled as D1To Dk, each module is equipped with an output port
With an input port,
Output port optical waveguide (52) vertical with m+1 root is connected, and the vertical optical waveguide of m+1 root (52) is successively labeled as LD1Extremely
LDm+1, the LD2To LDm+1The vertical optical waveguide of root (52) successively with Wk+1To Wk+mRoot ring optical waveguide (51) is vertically connected, and every
Place a narrowband micro-ring resonator (53), D in a upper left side to intersect vertically a little1To DkA dynamic RAM DRAM module
(3) the k root L connectedD1Vertical optical waveguide (52) successively with W1To WkRoot ring optical waveguide (51) is vertically connected, and is hung down each
Place one wide micro-ring resonator (54) in the upper left side of straight crosspoint；
Input port optical waveguide (52) vertical with m+1 root connect, and the vertical optical waveguide of m+1 root (52) is successively labeled as LDm+2
To LD2m+2, the LDm+3To LD2m+2The vertical optical waveguide of root (52) successively with Wk+1To Wk+mRoot ring optical waveguide (51) is vertically connected, and
A narrowband micro-ring resonator (53), D are placed in each upper right side to intersect vertically a little1To DkA dynamic RAM DRAM
The k root L that module (3) is connectedDm+2Vertical optical waveguide (52) successively with W1To WkRoot ring optical waveguide (51) is vertically connected, and
Place one wide micro-ring resonator (54) in the upper right side each to intersect vertically a little；
The m nonvolatile memory NVM module (4) is successively labeled as N1To Nm, the output port of each module and 1 are hung down
Direct light waveguide (52) connection, and the vertical optical waveguide (52) is labeled as LN1, N1To NmA nonvolatile memory NVM module
(4) the m root L connectedN1Vertical optical waveguide (52) successively with Wk+1To Wk+mRoot ring optical waveguide (51) vertically connects, and each
Place a broadband micro-ring resonator (54) in the upper left side to intersect vertically a little；The input port of each module light wave vertical with 1
Connection is led, and the vertical optical waveguide (52) is labeled as LN2, N1To NmThe m that root nonvolatile memory NVM module (4) is connected
Root LN2Vertical optical waveguide (52) successively with Wk+1To Wk+mRing optical waveguide (51) root vertically connects, and intersects vertically a little each
Place a broadband micro-ring resonator (54) in upper right side.
2. optical-fiber network according to claim 1, which is characterized in that the narrowband micro-ring resonator (53) has different
Resonance wavelength, in which:
The vertical optical waveguide (52) of i random access memory controller module (2) output port connection, with W1Ring optical waveguide (51) is vertical
I narrowband micro-ring resonator (53) of intersection, resonance wavelength is followed successively by λ1,λ2,....,λi-1,λi, with W2Ring optical waveguide
(51) intersect vertically the i narrowband micro-ring resonator (53) at place, and resonance wavelength is followed successively by λ2,λ3,....,λi,λ1, and so on
To and Wk+mThe resonance wavelength of the i narrowband micro-ring resonator (53) at ring optical waveguide (51) place of intersecting vertically is followed successively by λi,
λ1,....,λi-2,λi-1；
The vertical optical waveguide (52) of i random access memory controller module (2) input port connection intersects vertically with ring optical waveguide (51)
The resonance wavelength of the narrowband micro-ring resonator (53) at place is identical as output port；
The vertical optical waveguide (52) of k dynamic RAM DRAM module (3) output port connection, with Wk+1Annular light wave
The resonance wavelength for leading the m narrowband micro-ring resonator (53) at (51) place of intersecting vertically is followed successively by λi+1,λi+2,....,λi+m-1,λi+m,
Itself and Wk+2The resonance wavelength of the m narrowband micro-ring resonator (53) at ring optical waveguide (51) place of intersecting vertically is followed successively by λi+2,
λi+3,....,λi+m,λi+1, and so on to and Wk+mRing optical waveguide (51) intersects vertically the m narrowband micro-ring resonator at place
(53), resonance wavelength is followed successively by λi+m,λi+m-1,....,λi+2,λi+1；
The vertical optical waveguide (52) of k dynamic RAM DRAM module (3) input port connection and ring optical waveguide (51)
Intersect vertically place narrowband micro-ring resonator (53) resonance wavelength it is identical as output port.
3. optical-fiber network according to claim 1, which is characterized in that the broadband micro-ring resonator (54) has different humorous
Vibration wave is long, in which:
Vertical optical waveguide (52) phase vertical with ring optical waveguide (51) that k dynamic RAM DRAM module (3) is connected
The resonance wavelength of 2k broadband micro-ring resonator (54) at friendship is λ1To λi；
The vertical optical waveguide (52) that m nonvolatile memory NVM module (4) is connected intersects vertically with ring optical waveguide (51)
The resonance wavelength of the 2m broadband micro-ring resonator (54) at place is λ1To λi+m。
4. optical-fiber network according to claim 1, which is characterized in that random access memory controller module (2), including memory control unit
(21), wavelength control unit (22), modulation unit (23) and demodulating unit (24)；
The memory control unit (21), for handling the access request from calculate node (1)；Simultaneously with wavelength control
Unit (22), demodulating unit (23) and modulation unit (24) processed are communicated；
The wavelength control unit (22), for receiving the data of memory control unit (21), and according to Wavelength Assignment table logarithm
According to being handled, wavelength control signal is sent to modulation unit (23)；
The modulation unit (23), wavelength control signal for being sent according to wavelength control unit (22) is by memory control unit
(21) electric signal sent is modulated to the optical signal of corresponding wavelength；
The demodulating unit (24), for being memory control unit (21) reception by the optical signal demodulation in ring optical waveguide (52)
Electric signal.
5. optical-fiber network according to claim 1, which is characterized in that dynamic RAM DRAM module (3) includes: dynamic
Random access memory DRAM memory cell (31), wavelength control unit (32), modulation unit (33) and demodulating unit (34), in which:
The dynamic RAM DRAM memory cell (31), for storing data, while with demodulating unit (33) and modulation
Unit (34) is communicated；
The wavelength control unit (32), for receiving the data of demodulating unit (33), and according to Wavelength Assignment table to data into
Row processing sends wavelength control signal to modulation unit (33)；
The modulation unit (33), for being stored dynamic random according to the wavelength control signal that wavelength control unit (32) are sent
The electric signal that device DRAM memory cell (31) is sent is modulated to the optical signal of corresponding wavelength；
The demodulating unit (34), for being that dynamic RAM DRAM is deposited by the optical signal demodulation in ring optical waveguide (52)
Storage unit (31) received electric signal.
6. optical-fiber network according to claim 1, which is characterized in that dynamic RAM DRAM module (4) includes: non-easy
The property lost memory NVM storage unit (41), wavelength control unit (42), modulation unit (43) and demodulating unit (34):
The nonvolatile memory NVM storage unit (41), for storing data, and meanwhile it is single with demodulating unit (43) and modulation
First (44) are communicated；
The wavelength control unit (42), for receiving the data of demodulating unit (43), and according to Wavelength Assignment table to data into
Row processing sends wavelength control signal to modulation unit (33)；
The modulation unit (43), wavelength control signal for being sent according to wavelength control unit (32) is by non-volatile memories
The electric signal that device NVM storage unit (41) is sent is modulated to the optical signal of corresponding wavelength；
The demodulating unit (44), for being that nonvolatile memory NVM is deposited by the optical signal demodulation in ring optical waveguide (52)
Storage unit (41) received electric signal.
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