CN109522608A - A kind of reversed on-chip capacitance of high balance is to structure - Google Patents
A kind of reversed on-chip capacitance of high balance is to structure Download PDFInfo
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- CN109522608A CN109522608A CN201811233799.3A CN201811233799A CN109522608A CN 109522608 A CN109522608 A CN 109522608A CN 201811233799 A CN201811233799 A CN 201811233799A CN 109522608 A CN109522608 A CN 109522608A
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- 239000003990 capacitor Substances 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000005457 optimization Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012995 silicone-based technology Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005713 exacerbation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/392—Floor-planning or layout, e.g. partitioning or placement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
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- H01L28/40—
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2115/00—Details relating to the type of the circuit
- G06F2115/06—Structured ASICs
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- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
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- Geometry (AREA)
- Evolutionary Computation (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Microwave Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of reversed on-chip capacitances of high balance to structure, including a pair of oppositely positioned capacitor cell.Since in millimeter wave frequency band circuit, capacitor is widely used in matching network, the asymmetry of capacitor influences whether the characteristic of matching network, and wherein on-chip transformer is more sensitive as asymmetry of the device common in difference channel to capacitor.And the present invention solves traditional single MOM capacitor asymmetry as caused by the ghost effects such as substrate in the case where millimeter involves higher frequency section, and symmetry of the capacitor as Two-port netwerk passive device is greatly improved, improves the balance of the passive network comprising on-chip transformer.The present invention has two kinds of connection types of series connection in parallel, has higher expansion.The present invention can improve the balance of difference channel, and realize the functions such as impedance matching with the elements combined optimization such as on-chip transformer, so that the circuit performance that millimeter involves higher frequency is improved, output power and energy conversion efficiency including power amplifier.
Description
Technical field
The present invention relates to semiconductor integrated circuit field, more particularly to a kind of high balance reversed on-chip capacitance to knot
Structure.
Background technique
With the rapid development of silicon-based semiconductor technique, cutoff frequency and maximum power transfer frequency have been breached
500GHz can compare favourably with Group III-V semiconductor technique.Further, since the low cost of silicon-based technology, high flexibility ratio, digital-to-analogue
The characteristic of one makes silicon substrate millimeter-wave systems become the research hotspot of academia and industry, wide including 5G millimeter wave
Band ultrahigh speed communication system (WRC-19 1.13), W-waveband long-distance millimeter-wave car radar, THz imaging technology etc..So
And since the resistance substrate rate of silicon-based technology is lower, metal interlevel is away from smaller, and there is many ghost effects, these effects exist
Simulation and lower radio frequency band be not significant, but enters millimeter wave and Terahertz frequency range, the parasitic drain of substrate, and
Mutual coupling between metal layer and signal wire will severe exacerbation circuit performance.Wherein capacitor be millimetre-wave circuit design in must not
The element that can lack, it is usually employed for radio frequency and is grounded, in direct-current blocking-up and impedance matching.Therefore the on piece of millimeter wave frequency band
Capacitance characteristic is the topic for being worth thinking.
Common on-chip capacitance structure is divided into metal-insulator-metal type (MIM) capacitor, metal-oxide-metal (MOM)
The mos capacitance of capacitor and active area.MIM capacitor provides model by technique manufacturer, there is the limitation of minimum dimension, smaller in capacitance
When Q value it is lower, and have lower self-resonant frequency.MOM capacitor is since its expansibility is strong, and Q value is high, self-resonant frequency
Height is widely used in millimetre-wave circuit design.Mos capacitance is usually made variable capacitance pipe, has the adjustable spy of capacitance
Property, but usually Q value is very low.In addition, involving higher frequency section in millimeter, MIM capacitor and MOM capacitor have structural asymmetry.
Fig. 1 gives the lumped element model of MIM capacitor and MOM capacitor, wherein LsAnd RsIt is connection resistance and inductance, CparAnd RsubGeneration
The ghost effect of table substrate, Cmom_iAnd Cmim_iFor ideal capacitance value.
Since MOM is similar with mim capacitor structure, former structure is only analyzed here, passes through two port P1 from MOM capacitor
The available following result (when investigating impedance from a port, the ground connection of another port) of its impedance is investigated with P2:
Wherein Xs=Rs+jωLs, Xp=Rsub+1/jωCpar, Xc=1/j ω Cmom_i。
The impedance contrast so obtained from two-port are as follows:
As it can be seen that when frequency is lower, XpIt is very big, DeffVery little, capacitor can be regarded as symmetrical device.But with frequency
Raising, 1/j ω CparValue reduce, and because silicon-based semiconductor technique substrate resistivity it is lower, RsubValue also compared with
It is small, so that DeffBe positively correlated with frequency, cause single MOM and MIM capacitor investigated from two ports can obtain it is different
Capacitance.The asymmetry of the capacitor can also find from electromagnetic-field simulation, as shown in figure 4, MOM that capacitance is 35fF and
There is the asymmetry for being higher than 3.5fF for MIM capacitor.
Therefore, it is necessary to invent the novel capacitance structure of one kind to eliminate in traditional capacitance because of not right caused by ghost effect
Title property, furthermore the capacitor needs higher Q value and outstanding expansion and compatibility.
Summary of the invention
Goal of the invention: the object of the present invention is to provide a kind of reversed on-chip capacitances of high balance to structure, can eliminate
Traditional capacitance millimeter wave frequency band asymmetry, to improve the balance of circuit.
Technical solution: to reach this purpose, the invention adopts the following technical scheme:
The reversed on-chip capacitance of high balance of the present invention is to structure, including a pair of oppositely positioned capacitor cell.
Further, the capacitor cell is metal-oxide-metal structure.This makes it possible to ensure capacitor to have compared with
High Q value.
Further, capacitor cell is connected in series to.
Further, capacitor cell connects in parallel.
Further, the capacitor cell is laminated by metal layer and silicon dioxide layer.
The utility model has the advantages that the invention discloses a kind of reversed on-chip capacitances of high balance to structure, compared with prior art,
With following the utility model has the advantages that
1) reciprocal capacitance solves traditional single MOM capacitor in the case where millimeter involves higher frequency section by parasitisms such as substrates to structure
Symmetry of the capacitor as Two-port netwerk passive device is greatly improved in asymmetry caused by effect.
2) two kinds of connection types of series connection in parallel have higher expansion.
3) the high q-factor characteristic of MOM capacitor is maintained.
4) balance of difference channel can be improved, and realize impedance matching with the elements combined optimization such as on-chip transformer
Etc. functions.
5) structure of complete equipilibrium can be improved the circuit characteristic that millimeter involves higher frequency, including the defeated of power amplifier
Power and energy conversion efficiency out.
Detailed description of the invention
Fig. 1 is the 3D view and lumped element model of traditional MOM and MIM capacitor；
Fig. 2 is that the reciprocal capacitance of two kinds of connection types to the three-view diagram of structure and simplifies mould in parallel and serial in the present invention
Type；
Fig. 3 is lumped element model of the reciprocal capacitance of two kinds of connection types to structure in parallel and serial in the present invention；
Fig. 3 (a) is the lumped element model of reciprocal capacitance in parallel to structure；
Fig. 3 (b) is lumped element model of the concatenated reciprocal capacitance to structure；
Fig. 4 is the reciprocal capacitance pair of two kinds of connection types and tradition MOM and MIM capacitor in parallel and serial in the present invention
Characteristic Simulation is as a result, include capacitor symmetry and Q value；
Fig. 5 (a) is the 3D view for applying the present invention to a W-waveband power amplifier output synthesis network；
Fig. 5 (b) is by the reciprocal capacitance in Fig. 5 (a) to replacing with disequilibrium pair caused by traditional MOM and MIM capacitor
Than figure；
Fig. 6 (a) is the circuit diagram for applying the present invention to a W-waveband power amplifier；
Fig. 6 (b) is by reciprocal capacitances all in Fig. 6 (a) to the large-signal performance comparison diagram for replacing with traditional MOM capacitor.
Specific embodiment
Technical solution of the present invention is further introduced with attached drawing With reference to embodiment.
The reversed on-chip capacitance that present embodiment discloses a kind of high balance is oppositely positioned to structure, including a pair
Capacitor cell.Capacitor cell is metal-oxide-metal structure, is laminated by metal layer and silicon dioxide layer.Capacitor list
Member can be connected in series to, as shown in Fig. 2 and Fig. 3 (a).Capacitor cell can also connect in parallel
Come, as shown in Fig. 2 and Fig. 3 (b).The capacitance being connected in parallel is two times of capacitor cell, is connected in series as capacitor cell
Half.The reciprocal capacitance can eliminate traditional single MOM capacitor in the case where millimeter involves higher frequency section by substrate etc. to structure
Asymmetry caused by ghost effect is suitable for height to improve the symmetry of capacitor, while the structure has higher q values
Frequency circuit design.In parallel and serial two kinds of connection types make the structure have very strong expansibility, capacitor design precision compared with
It is high.
Fig. 4 is the reciprocal capacitance pair of two kinds of connection types and the characteristic Simulation of tradition MOM and MIM capacitor in parallel and serial
As a result, including capacitor symmetry and Q value.The capacitance structure can be applied in the design of the circuit of differential configuration, and wherein on piece becomes
Depressor is normally used for single-ended-differential conversion and impedance matching as the common element in difference channel, and the reciprocal capacitance is to knot
Structure can together with on-chip transformer combined optimization, in the case where guaranteeing circuit balancing realize required for function.
As shown in Fig. 5 (a), the reciprocal capacitance that is connected in parallel is to being applied to the output based on 1:2 on-chip transformer
It synthesizes in network, the function of output impedance matching and differential to single-ended conversion is realized by combined optimization.The output synthesizes network
Center frequency point is 94GHz, and it is 35fF that required capacitance, which is calculated,.By the capacitor of the 35fF to be connected in parallel reciprocal capacitance
Right, tri- kinds of structures of MOM and MIM are realized, and are investigated on the influence of the Amplitude balance and phase balance of differential signal.Such as Fig. 5 (b) as it can be seen that
There is classic amplitude-phase balance to structure using reciprocal capacitance is connected in parallel, it is flat in amplitude using MOM and MIM capacitor
Influence in weighing apparatus property is little, but has large effect to phase equilibrium, can make 5 ° of ideal differential signal skew or more.
As shown in Fig. 6 (a), the reciprocal capacitance being connected in parallel is widely used in the function of a W-waveband to (overstriking capacitor)
In rate amplifier, to realize impedance matching.In order to investigate the income for using reciprocal capacitance pair, it is substituted for traditional single MOM
Capacitor, and detect the output power and transfer efficiency of power amplifier.As shown in Fig. 6 (b), using reciprocal capacitance to having
The additional output power of 0.15dB and 0.3% extra conversion efficiency.
Claims (5)
1. a kind of reversed on-chip capacitance of high balance is to structure, it is characterised in that: including a pair of oppositely positioned capacitor cell.
2. the reversed on-chip capacitance of high balance according to claim 1 is to structure, it is characterised in that: the capacitor cell
For metal-oxide-metal structure.
3. the reversed on-chip capacitance of high balance according to claim 1 is to structure, it is characterised in that: capacitor cell is to go here and there
The mode of connection connects.
4. the reversed on-chip capacitance of high balance according to claim 1 is to structure, it is characterised in that: capacitor cell is with simultaneously
The mode of connection connects.
5. the reversed on-chip capacitance of high balance according to claim 1 is to structure, it is characterised in that: the capacitor cell
It is laminated by metal layer and silicon dioxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811233799.3A CN109522608A (en) | 2018-10-23 | 2018-10-23 | A kind of reversed on-chip capacitance of high balance is to structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811233799.3A CN109522608A (en) | 2018-10-23 | 2018-10-23 | A kind of reversed on-chip capacitance of high balance is to structure |
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| Publication Number | Publication Date |
|---|---|
| CN109522608A true CN109522608A (en) | 2019-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811233799.3A Pending CN109522608A (en) | 2018-10-23 | 2018-10-23 | A kind of reversed on-chip capacitance of high balance is to structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021047757A1 (en) * | 2019-09-10 | 2021-03-18 | Huawei Technologies Co., Ltd. | An amplification device for amplifying a signal in electro-optical transceivers |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1148913A (en) * | 1995-02-16 | 1997-04-30 | 菲利浦电子有限公司 | Improvement in or relating to communications receivers |
| CN101893796A (en) * | 2009-05-19 | 2010-11-24 | 三星电子株式会社 | Lcd |
| CN202424635U (en) * | 2012-01-18 | 2012-09-05 | 成都信息工程学院 | Switching circuit using polar capacitors as non-polar capacitors |
-
2018
- 2018-10-23 CN CN201811233799.3A patent/CN109522608A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1148913A (en) * | 1995-02-16 | 1997-04-30 | 菲利浦电子有限公司 | Improvement in or relating to communications receivers |
| CN101893796A (en) * | 2009-05-19 | 2010-11-24 | 三星电子株式会社 | Lcd |
| CN202424635U (en) * | 2012-01-18 | 2012-09-05 | 成都信息工程学院 | Switching circuit using polar capacitors as non-polar capacitors |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021047757A1 (en) * | 2019-09-10 | 2021-03-18 | Huawei Technologies Co., Ltd. | An amplification device for amplifying a signal in electro-optical transceivers |
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Application publication date: 20190326 |
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