CN109509753A - A kind of ferroelectric domain wall memory that high density nondestructive is read - Google Patents
A kind of ferroelectric domain wall memory that high density nondestructive is read Download PDFInfo
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- CN109509753A CN109509753A CN201810585371.9A CN201810585371A CN109509753A CN 109509753 A CN109509753 A CN 109509753A CN 201810585371 A CN201810585371 A CN 201810585371A CN 109509753 A CN109509753 A CN 109509753A
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- 230000015654 memory Effects 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 53
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 6
- 230000005621 ferroelectricity Effects 0.000 claims description 3
- 239000013049 sediment Substances 0.000 claims description 3
- 238000005191 phase separation Methods 0.000 claims description 2
- 230000006641 stabilisation Effects 0.000 abstract description 4
- 238000011105 stabilization Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 229910002902 BiFeO3 Inorganic materials 0.000 description 16
- 229910052712 strontium Inorganic materials 0.000 description 12
- 229910052746 lanthanum Inorganic materials 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 10
- 229910000473 manganese(VI) oxide Inorganic materials 0.000 description 10
- 230000010287 polarization Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 229910002244 LaAlO3 Inorganic materials 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 241000931526 Acer campestre Species 0.000 description 4
- 229910002353 SrRuO3 Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000001338 self-assembly Methods 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910003042 (La,Sr)MnO3 Inorganic materials 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- -1 lanthanum aluminate Chemical class 0.000 description 1
- PIRUAZLFEUQMTG-UHFFFAOYSA-N lanthanum;oxomanganese;strontium Chemical compound [Sr].[La].[Mn]=O PIRUAZLFEUQMTG-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
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- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention discloses the ferroelectric domain wall memories that a kind of high density nondestructive is read.This nanometer of ferroelectric domain wall memory successively includes: single crystal substrates layer, bottom electrode layer and ferroelectric material layer from the bottom to top；The ferroelectric material layer is made of the square that several are equidistantly arranged.600 nanometers of side length rectangular ferroelectric cells below are obtained by controlling different growth conditions, simple process is effective, avoids that cost is very high and lithography and etching damage caused by material property of complex process.Ferroelectric domain wall device cell prepared by the present invention forms topological protection to ferroelectric domain wall using shape geometrical boundary condition, to realize voltage-controlled high on-off ratio, stabilization, repeat erasable non-volatile conductive domain wall.The present invention is effectively utilized the information storage that ferroelectric domain wall size is small, and the low feature of control voltage realizes high density, the ferroelectric domain wall of low-power consumption is unit.
Description
Technical field
The invention belongs to information storage technologies and Material Field, are related to a kind of ferroelectric domain wall storage that high density nondestructive is read
Device.
Background technique
Current newest magnetic storage technology is that data are written based on spin polarized current, is stored using the movement of neticdomain wall
Information, but its one is the disadvantage is that power consumption is high in writing process.Another kind of information storage technology is random based on ferroelectric capacitor formula
Memory is stored information using polarization state, but makes polarization reversal due to needing to apply extraneous electric current when reading information, is destroyed
The information of storage, furthermore the memory capacity of this capacitor induction type will receive very big limitation in nano-scale.
In order to solve this problem, the magnetoelectricity random access memory that is written and read using electric field and ferroelectric domain wall memory it is general
Thought has been suggested.The domain wall of ferroelectric material can show different electric conductivity with conditions differences such as polarization, can be used for storing information.Iron
Electric domain wall since scale is small, width usually at 10 nanometers hereinafter, thus very it is potential for highdensity information store.However mesh
Preceding there is no commercial ferroelectric domain wall devices to occur, and on the one hand since the electric conductivity of traditional domain wall is not high, reads and writes the switch of electric current
It is bigger than not enough；Another aspect is that the domain wall due to spontaneously forming is difficult to stablize when not having defect pinning, special electrode
Repetition is erasable, i.e., domain wall is volatibility, and the reading of data is destructive.Newest report is put down by the way that engineer is special
Face electrode structure, as the application of varying strength, direction electric field can create, wipe ferroelectric domain wall between electrode, thus can be real
Existing two even more than Resistance states.But this planar electrode structure is unfavorable for the raising of density of memory cells, need into one
Step improves or finds alternative solution.
Summary of the invention
The object of the present invention is to provide the ferroelectric domain wall memories that a kind of high density nondestructive is read.
Nanometer ferroelectric domain wall memory provided by the invention, successively include: from the bottom to top single crystal substrates layer, bottom electrode layer and
Ferroelectric material layer；
The ferroelectric material layer is made of the square that several are equidistantly arranged.
In above-mentioned nanometer ferroelectric domain wall memory, the material for constituting the single crystal substrates layer is Ca-Ti ore type monocrystalline, specifically
It can be lanthanum aluminate LaAlO3, strontium titanates SrTiO3。
The material for constituting the bottom electrode layer is perofskite type oxide, concretely lanthanum strontium manganese oxygen (La, Sr) MnO3, ruthenium
Sour strontium SrRuO3。
The material for constituting the ferroelectric material layer is the ferroelectric material for causing phenomenon of phase separation with stress, concretely iron
Sour bismuth BiFeO3(BFO)。
The single crystal substrates layer is oriented to (001)；
The thickness of the bottom electrode layer is not more than 100 nanometers, concretely 2 nanometers, 6 nanometers, 10 nanometers, 20 nanometers etc..
The ferroelectric material layer with a thickness of 10-100 nanometers, concretely 40 nanometers, 60 nanometers, 80 nanometers etc..
The square is nanoscale square；The square is the square being self-assembly of, and shape can be square or grow
It is rectangular；The nanometer ferroelectric domain wall memory is the nanoscale square being self-assembly of；Using shape geometrical boundary condition to iron
Electric domain wall forms topological protection, realizes voltage-controlled high on-off ratio, stabilization, repeats erasable non-volatile conductive domain wall.
The side length of the nanometer ferroelectric domain wall memory is not more than 600 nanometers, concretely 200 nanometers.
The method provided by the invention for preparing the nanometer ferroelectric domain wall memory, includes the following steps:
Single crystal substrates are annealed after obtaining the single crystal substrates layer, are deposited on the single crystal substrates layer using pulse laser
Method is sequentially prepared to obtain the bottom electrode layer and ferroelectric material layer.
In the above method, described in single crystal substrates annealing steps, temperature is 900 DEG C -1100 degrees Celsius, concretely
1000 degrees Celsius；Time is 1 hour or more, concretely 2 hours；The purpose of the annealing is to obtain straight surface
Atomic steps；
Using in pulse laser sediment method preparation step, laser used is cesium fluoride pulse laser；
Excimer pulsed laser wavelength is 193-355 nanometers；Concretely 248 nanometers；
Laser frequency is 1-10 hertz；Concretely 5 hertz；
Laser energy density is 1-3 joules/square centimeter, concretely 1.5 joule/square centimeter；
Growth of oxygen pressure is 5-50 Pascal, concretely 15,20 or 30 Pascal；
Growth temperature is 600-750 degrees Celsius, concretely 680 degrees Celsius, 700 degrees Celsius or 720 degrees Celsius；
Oxygen pressure of annealing is 103-105Pascal, specially 20000 Pascals or 50000 Pascals；
Rate of temperature fall is 1-20 degrees celsius/minute；Concretely 5 degrees celsius/minute.
It is different with the material of ferroelectric material layer due to constituting the bottom electrode layer, thus under above-mentioned PLD process conditions, structure
Several spaced box structures can be self-assembly of at the material of ferroelectric material layer.
In addition, the nanometer ferroelectric domain wall memory that aforementioned present invention provides is stored in information or in information lossless reading
Using also belonging to protection scope of the present invention.
Beneficial effects of the present invention are as follows:
1, compared with prior art, nanometer ferroelectric domain wall memory provided by the invention does not need complicated means of photolithography,
It reduces costs, and avoids damage of the photoetching to material, remain the performance of material itself to greatest extent.
2, the present invention innovates in terms of the formation of ferroelectric domain wall and stabilization, the nanometer side formed using self assembly form
There are the domain walls of shape protection in block structure, can use ferroelectric material two opposite polarized states outside face and control domain wall
Conductive state so that highly conductive ferroelectric domain wall is protected by the geometry of itself, to realize that stable high on-off ratio (can
Up to 103) and stablize repeatable erasable.The polarization turnover voltage of application can be down to positive and negative 3 volts or so, and reading voltage can be with
At 1.5 volts, the power consumption of nanometer ferroelectric memory is greatly reduced.
3, the present invention is advantageously implemented high storage density, memory cell size 200 using vertical alive mode
Storage density is up to 16GB/inch when nanometer2, much higher than ferroelectric type memory commercial at present.
Detailed description of the invention
Fig. 1 is the self-assembled nanometer ferroelectric domain wall memory schematic diagram of present invention design growth；
Fig. 2 is the X-ray diffraction structure chart of 1 nanometer of ferroelectric memory of embodiment；
Ferroelectric domain and corresponding conduction state figure of the Fig. 3 for 1 nanometer of ferroelectric domain wall memory of embodiment；
Fig. 4 is 1 two kinds of storage states of embodiment, that is, high low resistance state schematic diagram.
Fig. 5 is the schematic diagram of 1 nanometer of ferroelectric domain wall memory array of embodiment；
Description of symbols:
1 single crystal substrates layer, 2 bottom electrode layers, 3 ferroelectric material layers, 4 upper electrode layers.
Specific embodiment
The present invention is further elaborated combined with specific embodiments below, but the present invention is not limited to following embodiments.Institute
State method is conventional method unless otherwise instructed.The raw material can obtain unless otherwise instructed from public commercial source.
Embodiment 1, nanometer ferroelectric domain wall memory
Fig. 1 is the structural schematic diagram of nanometer ferroelectric domain wall memory provided by the invention, wherein is successively wrapped from the bottom to top
It includes: single crystal substrates layer 1, bottom electrode layer 2 and ferroelectric material layer 3.Wherein, the square that ferroelectric material layer is equidistantly arranged by several
Composition.
This nanometer of each layer of ferroelectric domain wall memory is followed successively by LaAlO from the bottom to top3/(La,Sr)MnO3/BiFeO3。
Single crystal substrates layer 1 is LaAlO3, it is oriented to (001)；Bottom electrode layer 2 is (La, Sr) MnO3, with a thickness of 2 nanometers, iron
Material layer 3 is BiFeO3With a thickness of 40 nanometers；
The preparation method of this nanometer of ferroelectric domain wall memory deposits (PLD) method using pulse laser, prepares bottom electrode layer
When with ferroelectric material layer, ceramic target used is respectively commercial (La, Sr) MnO3And BiFeO3Polycrystal target.Prepare hearth electrode
Layer it is identical with the actual conditions of ferroelectric material layer, as follows: to single crystal substrates 1000 DEG C progress the high temperature anneal 2 hours
Obtain parallel surface step.Cesium fluoride pulse laser is selected, optical maser wavelength is 248 nanometers, and laser frequency is 5 hertz, laser
Energy density is about 1.5 joules/square centimeter, and growth of oxygen pressure is 20 Pascals, and growth temperature is 700 degrees Celsius, growth thickness
For (La, Sr) MnO32 nanometers, BiFeO340 nanometers, annealing oxygen pressure is 20000 Pascals, and rate of temperature fall is 5 degree mins Celsius
Clock is cooled to room temperature, and obtains.
Fig. 2 is the LaAlO3/(La,Sr)MnO3/BiFeO3The XRD structural schematic diagram of nanometer ferroelectric memory, shows
BiFeO3Film has two kinds of structures of good epitaxial crystallinity and rhombohedral phase and tetragonal phase.
A-c is BiFeO in Fig. 33Outside the nanometer conducting atomic force microscopy figure of ferroelectric storage cell, face (OP) ferroelectric domain with
And the schematic diagram of polarization direction.D-f is corresponding each figure after applying voltage polarizing overturning in Fig. 3.Illustrate in original state, storage
The center on the downwardly directed square island of polarization direction in unit, ferroelectric domain wall only has the electric current of very little at this time, is a high resistance
State；Polarization is turned into upwards and is directed toward after the farmland of square island quadrangle, and it is one that ferroelectric domain wall, which has the electric current being remarkably reinforced,
A low-resistance state.
The device cell that Fig. 4 display present invention is obtained using the corresponding different domain wall conductive states of two kinds of difference polarized states
High current and low current state stablize repeatable current on/off ratio to obtain, and up to 103.This is the basis as memory.
The polarization turnover voltage wherein applied can be down to positive and negative 3 volts or so, and reading voltage can greatly reduce and receive at 1.5 volts
The power consumption of rice ferroelectric memory.
Fig. 5 schematically shows the cellular construction that the present invention forms nano square island in the way of self-assembled growth, often
There is the domain wall spontaneously formed on a unit, it is adjustable by applying the ferroelectric domain of electric field roll-over unit upward or downward
Domain wall has the state of huge conductive (when polarizing upward) or substantially non-conductive (when polarizing downward), i.e. electric current ON/OFF state.
Embodiment 2, nanometer ferroelectric domain wall memory
Each layer of this nanometer of ferroelectric memory is followed successively by single crystal substrates layer/bottom electrode layer/ferroelectric material layer from the bottom to top.Its
In, ferroelectric material layer is made of the square that several are equidistantly arranged.
Single crystal substrates layer is LaAlO3, it is oriented to (001)；Bottom electrode layer is (La, Sr) MnO3, with a thickness of 20 nanometers, ferroelectricity
Material layer 3 is BiFeO3, with a thickness of 80 nanometers；
The preparation method of this nanometer of ferroelectric domain wall memory deposits (PLD) method using pulse laser, prepares bottom electrode layer
When with ferroelectric material layer, ceramic target used is respectively commercial (La, Sr) MnO3And BiFeO3Polycrystal target.Prepare hearth electrode
Layer it is identical with the actual conditions of ferroelectric material layer, as follows: to single crystal substrates 1000 DEG C progress the high temperature anneal 2 hours
Obtain parallel surface step.Cesium fluoride pulse laser is selected, optical maser wavelength is 248 nanometers, and laser frequency is 5 hertz, laser
Energy density is about 1.5 joules/square centimeter, and growth of oxygen pressure is 15 Pascals, and growth temperature is 720 degrees Celsius, film thickness
For (La, Sr) MnO320 nanometers, BiFeO380 nanometers, annealing oxygen pressure is 20000 Pascals, and rate of temperature fall is 5 degree mins Celsius
Clock, be cooled to final temperature terminates for room temperature, and obtains.
Embodiment 3, nanometer ferroelectric domain wall memory
Each layer of this nanometer of ferroelectric memory is followed successively by single crystal substrates layer/bottom electrode layer/ferroelectric material layer from the bottom to top.Its
In, ferroelectric material layer is made of the square that several are equidistantly arranged.
Single crystal substrates layer is SrTiO3, it is oriented to (001)；Bottom electrode layer is (La, Sr) MnO3, with a thickness of 6 nanometers, ferroelectricity
Material layer 3 is BiFeO3, with a thickness of 40 nanometers；
The preparation method of this nanometer of ferroelectric domain wall memory deposits (PLD) method using pulse laser, prepares bottom electrode layer
When with ferroelectric material layer, ceramic target used is respectively commercial (La, Sr) MnO3And BiFeO3Polycrystal target.Prepare hearth electrode
Layer it is identical with the actual conditions of ferroelectric material layer, as follows: acid corrosion is carried out first to single crystal substrates, then 1000 DEG C into
Obtain parallel surface step within row the high temperature anneal 2 hours.Cesium fluoride pulse laser is selected, optical maser wavelength is 248 nanometers, is swashed
Light frequency is 7 hertz, and laser energy density is about 1.5 joules/square centimeter, and growth of oxygen pressure is 30 Pascals, and growth temperature is
680 degrees Celsius, film thickness is (La, Sr) MnO36 nanometers, BiFeO340 nanometers, annealing oxygen pressure is 50000 Pascals, cooling
Rate is 5 degrees celsius/minutes, and be cooled to final temperature terminates for room temperature, and obtains.
Embodiment 4, nanometer ferroelectric domain wall memory
Each layer of this nanometer of ferroelectric memory is followed successively by single crystal substrates layer/bottom electrode layer/ferroelectric material layer from the bottom to top.Its
In, ferroelectric material layer is made of the square that several are equidistantly arranged.
Single crystal substrates layer is LaAlO3, it is oriented to (001)；Bottom electrode layer is SrRuO3, with a thickness of 10 nanometers, ferroelectric material
Layer is BiFeO3With a thickness of 60 nanometers；
The preparation method of this nanometer of ferroelectric domain wall memory deposits (PLD) method using pulse laser, prepares bottom electrode layer
When with ferroelectric material layer, ceramic target used is respectively commercial SrRuO3And BiFeO3Polycrystal target.Prepare bottom electrode layer and iron
The actual conditions of material layer are identical, as follows: to be put down within progress the high temperature anneal 2 hours to single crystal substrates at 1000 DEG C
Capable surface step.Cesium fluoride pulse laser is selected, optical maser wavelength is 248 nanometers, and laser frequency is 5 hertz, and laser energy is close
Degree is about 1.5 joules/square centimeter, and growth of oxygen pressure is 20 Pascals, and growth temperature is 700 degrees Celsius, and film thickness is
SrRuO310 nanometers, BiFeO360 nanometers, annealing oxygen pressure is 20000 Pascals, and rate of temperature fall is 5 degrees celsius/minutes, cooling
Terminate to final temperature for room temperature, and obtains.
Compared with prior art, the present invention forms the storage unit of nanoscale by the way of self-assembled growth, utilizes
The topological protective effect of geometry obtains electric current stabilization and repeats erasable ferroelectric domain wall, realizes that non-volatile low-power consumption is highly dense
The nanometer ferroelectric domain wall storage unit of degree.
Although a specific embodiment of the invention is described in detail referring to illustrative examples of the invention,
It is it must be understood that those skilled in the art can be designed that various other improvement and embodiment, these are improved and embodiment will
It falls within spirit and scope.Specifically, aforementioned disclosure, attached drawing and the scope of the claims it
It is interior, can single crystal substrates/hearth electrode/ferroelectric oxide and in terms of make it is reasonable change and improve, without
It is detached from spirit of the invention.Variation in terms of in addition to single crystal substrates/growth conditions such as hearth electrode/ferroelectric oxide and thickness and
It improves, range is defined by the appended claims and the equivalents thereof.
Claims (10)
1. a kind of nanometer of ferroelectric domain wall memory successively includes: single crystal substrates layer, bottom electrode layer and ferroelectric material from the bottom to top
Layer；
The ferroelectric material layer is made of the square that several are equidistantly arranged.
2. according to claim 1 nanometer of ferroelectric domain wall memory, it is characterised in that: constitute the material of the single crystal substrates layer
Material is Ca-Ti ore type monocrystalline.
3. according to claim 1 or 2 nanometer of ferroelectric domain wall memory, it is characterised in that: constitute the bottom electrode layer
Material is perofskite type oxide.
4. according to claim 1 to 3 nanometer of ferroelectric domain wall memory, it is characterised in that: constitute the ferroelectricity material
The material of the bed of material is the ferroelectric material for causing phenomenon of phase separation with stress.
5. according to any one of claims 1-4 nanometer of ferroelectric domain wall memory, it is characterised in that: the single crystal substrates layer
Be oriented to (001)；
The thickness of the bottom electrode layer is not more than 100 nanometers；
The ferroelectric material layer with a thickness of 10-100 nanometers.
6. any nanometer ferroelectric domain wall memory in -5 according to claim 1, it is characterised in that: the square is from group
Fill the nanoscale square formed；
The side length of the nanometer ferroelectric domain wall memory is not more than 600 nanometers.
7. a kind of method for preparing any nanometer ferroelectric domain wall memory in claim 1-6, includes the following steps:
Single crystal substrates are annealed after obtaining the single crystal substrates layer, pulse laser sediment method is utilized on the single crystal substrates layer
It is sequentially prepared to obtain the bottom electrode layer and ferroelectric material layer, and obtains.
8. according to the method described in claim 7, it is characterized by: described in single crystal substrates annealing steps, temperature 900
℃-1100℃；Time is 1 hour or more；
Using in pulse laser sediment method preparation step, laser energy density is 1-3 joules/square centimeter；
Growth of oxygen pressure is 5-50 Pascal；
Growth temperature is 600-750 degrees Celsius；
Oxygen pressure of annealing is 103-105Pascal；
Rate of temperature fall is 1-20 degrees celsius/minute.
9. application of any nanometer ferroelectric domain wall memory in information storage in claim 1-6.
10. application of any nanometer ferroelectric domain wall memory in information lossless reading in claim 1-6.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190186A (en) * | 2019-04-17 | 2019-08-30 | 淮阴工学院 | A kind of construction method of the topological farmland array of high density polarization |
| CN110634871A (en) * | 2019-10-15 | 2019-12-31 | 淮阴工学院 | Periodic strip domain structure of ferroelectric film and characterization method thereof |
| CN111540742A (en) * | 2020-04-10 | 2020-08-14 | 华南师范大学 | Preparation method of novel ferroelectric topological domain memory unit |
| CN114220466A (en) * | 2021-12-03 | 2022-03-22 | 北京理工大学 | Logic regulation and control method of ferroelectric domain wall device and logic device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103427018B (en) * | 2013-07-10 | 2016-01-27 | 北京师范大学 | A kind of device and neticdomain wall regulate and control method with neticdomain wall controllable manganese-salt phosphating |
-
2018
- 2018-06-08 CN CN201810585371.9A patent/CN109509753B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103427018B (en) * | 2013-07-10 | 2016-01-27 | 北京师范大学 | A kind of device and neticdomain wall regulate and control method with neticdomain wall controllable manganese-salt phosphating |
Non-Patent Citations (2)
| Title |
|---|
| MASARU SHIMIZU ET AL: "Preparation of PbZrxTi1-xO3 nanostructures on various substrates by MOCVD", 《JOURNAL OF CRYSTAL GROWTH》 * |
| ZHONGWEN LI ET AL: "High-density array of ferroelectric nanodots with robust", 《SCIENCE ADVANCES》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110190186A (en) * | 2019-04-17 | 2019-08-30 | 淮阴工学院 | A kind of construction method of the topological farmland array of high density polarization |
| CN110634871A (en) * | 2019-10-15 | 2019-12-31 | 淮阴工学院 | Periodic strip domain structure of ferroelectric film and characterization method thereof |
| CN110634871B (en) * | 2019-10-15 | 2021-10-29 | 淮阴工学院 | Characterization method of periodic strip domain structure of ferroelectric film |
| CN111540742A (en) * | 2020-04-10 | 2020-08-14 | 华南师范大学 | Preparation method of novel ferroelectric topological domain memory unit |
| CN114220466A (en) * | 2021-12-03 | 2022-03-22 | 北京理工大学 | Logic regulation and control method of ferroelectric domain wall device and logic device |
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