CN109509731A - The tin silver connected structure and its manufacturing method of semiconductor - Google Patents
The tin silver connected structure and its manufacturing method of semiconductor Download PDFInfo
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- CN109509731A CN109509731A CN201710827840.9A CN201710827840A CN109509731A CN 109509731 A CN109509731 A CN 109509731A CN 201710827840 A CN201710827840 A CN 201710827840A CN 109509731 A CN109509731 A CN 109509731A
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
- H01L2224/27426—Chemical solution deposition [CSD], i.e. using a liquid precursor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29147—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/2954—Coating
- H01L2224/29599—Material
- H01L2224/296—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29611—Tin [Sn] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/2954—Coating
- H01L2224/29599—Material
- H01L2224/296—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29639—Silver [Ag] as principal constituent
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Abstract
The invention discloses the tin silver connected structures and its manufacturing method of a kind of semiconductor, the tin silver connected structure of the semiconductor, which has, connects layers of copper, tin coating and silvering, this connects layers of copper and is contacted with stanniferous plating solution to carry out the first electroless plating reaction, so that the tin coating is formed directly into this and connects layers of copper surface, the tin coating is contacted with containing silver plating solution to carry out the second electroless plating reaction, the silvering is set to be formed directly into the tin coating surface, wherein the silvering is to inhibit the tin coating surface to form tin palpus.
Description
Technical field
Tin silver connected structure and its manufacturing method of the present invention about a kind of semiconductor, especially one kind can inhibit tin palpiform
At and simplify manufacturing process semiconductor tin silver connected structure and its manufacturing method.
Background technique
TaiWan, China patent of invention I457463 discloses a kind of metal conductive particles, and manufacturing process is summarized as follows: being mentioned first
For multiple copper particle, the copper particle is mixed with argentiferous acid solution and is reacted with carrying out silver-bearing copper, silver coating is made to be formed in institute
Copper particle surface is stated, which has multiple silver-colored islands, has the space for appearing the copper particle surface between the silver island, most
The copper particle with the silver coating is mixed with stanniferous acid solution to carry out the displacement of tin copper and react afterwards, makes tin clad
The space for being formed on the silver coating, and being filled between adjacent silver island.
In order to carry out the displacement reaction of tin copper to form the tin clad, TaiWan, China patent of invention I457463 must be controlled
Silver-bearing copper reaction makes the silver coating form the silver-colored island to appear the copper particle surface, however silver-bearing copper reaction is not easy to control, when
When the copper particle surface is completely covered in the silver coating, which can not contact the copper particle surface to carry out tin copper
Displacement reaction, causes the yield of the metal conductive particles bad.
Summary of the invention
The main purpose of the present invention is to provide the tin silver connected structures and its manufacturing method of a kind of semiconductor, by direct
The silvering for being formed in tin coating surface inhibits the tin coating surface to form tin palpus, compared to TaiWan, China patent of invention
I457463, the simplified manufacturing process of the present invention can form the silvering to inhibit tin palpus.
The invention discloses a kind of tin silver connected structures of semiconductor, and it includes layers of copper, tin coating and silvering is connected, this is led
Connect layers of copper and appear face with first, which, which is formed directly into this and connects this of layers of copper, first appears face, stanniferous plating solution with should
It connects layers of copper and carries out the first electroless plating reaction to form the tin coating, which has second to appear face, and the silvering is direct
This for being formed in the tin coating second appears face, carries out the second electroless plating reaction containing silver plating solution and the tin coating and is plated with forming the silver
Layer, the silvering to inhibit the tin coating this second appear face formed tin palpus.
The tin silver connected structure of semiconductor above-mentioned, wherein the thickness of the tin coating is between 0.1 to 10 μm.
The tin silver connected structure of semiconductor above-mentioned, wherein the thickness of the silvering is not more than 2 μm.
The tin silver connected structure of semiconductor above-mentioned, wherein the thickness of the silvering is between 0.01 to 1 μm.
In addition, it includes offers to connect layers of copper the invention discloses a kind of manufacturing method of the tin silver connected structure of semiconductor,
This connects layers of copper and appears face with first；The first electroless plating reaction is carried out, this connects this of layers of copper, and first to appear face contact stanniferous
Plating solution, the stanniferous plating solution connect layers of copper with this and carry out first electroless plating reaction, to connect this of layers of copper and first appear face at this
Tin coating is directly formed, which has second to appear face；And carry out the second electroless plating reaction, the tin coating this second
Appear face contact containing silver plating solution, this contains silver plating solution and the tin coating carries out second electroless plating reaction, with being somebody's turn to do in the tin coating
Second, which appears face, directly forms silvering, the silvering to inhibit the tin coating this second appear face formed tin palpus.
The manufacturing method of the tin silver connected structure of semiconductor above-mentioned, wherein this contain the silver content in silver plating solution between
0.001 between 2wt%.
The manufacturing method of the tin silver connected structure of semiconductor above-mentioned, wherein the thickness of the tin coating is between 0.1 to 10 μm
Between.
The manufacturing method of the tin silver connected structure of semiconductor above-mentioned, wherein the thickness of the silvering is not more than 2 μm.
The manufacturing method of the tin silver connected structure of semiconductor above-mentioned, wherein the thickness of the silvering is between 0.01 to 1 μm
Between.
The manufacturing method of the tin silver connected structure of semiconductor above-mentioned, wherein additionally comprising work before first electroless plating reaction
Change step, to remove first oxide on surface for appearing face.
The present invention has obvious advantages and beneficial effects compared with the existing technology.By above-mentioned technical proposal, the present invention
The tin silver connected structure and its manufacturing method of semiconductor can reach comparable technical progress and practicability, and have in industry
Extensive utility value, at least has the advantage that
The silvering of the invention is to be formed directly into this of the tin coating with second electroless plating reaction second to appear face,
Therefore can be effectively suppressed the tin coating this second appear face formed tin must, and compared to TaiWan, China patent of invention I457463,
The present invention can simplify the control of process parameters, therefore have effects that simplified manufacturing process.
In addition, the tin silver connected structure when the semiconductor of the invention is engaged with each other with another semiconductor structure via reflow
When, the silver atoms in the silvering can diffuse in the scolding tin of the tin coating and another semiconductor, therefore compared to TaiWan, China
The silver-colored island of patent of invention I457463, the silvering of the invention have while inhibiting the tin coating and another semiconductor structure
Scolding tin forms the effect of tin palpus.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And it can be implemented in accordance with the contents of the specification, and in order to allow above and other objects, features and advantages of the invention can
It is clearer and more comprehensible, it is special below to lift preferred embodiment, and cooperate attached drawing, detailed description are as follows.
Detailed description of the invention
Fig. 1 a: embodiment according to the present invention, a kind of manufacturing method flow chart of the tin silver connected structure of semiconductor.
Fig. 2 a and Fig. 2 b: an embodiment according to the present invention, the manufacturing method signal of the tin silver connected structure of the semiconductor
Figure.
Fig. 3 a and Fig. 3 b: an embodiment according to the present invention, the manufacturing method signal of the tin silver connected structure of the semiconductor
Figure.
Fig. 4 a and Fig. 4 b: an embodiment according to the present invention, the manufacturing method signal of the tin silver connected structure of the semiconductor
Figure.
Fig. 5 a to Fig. 5 c: the scanning electron of an embodiment according to the present invention, the tin silver connected structure of the semiconductor is aobvious
Micro mirror (SEM) image, scanning electron microscope additional-energy Dispersive Spectrometer (SEM/EDS) elemental analysis map and element point
Analyse table.
Fig. 6 a to Fig. 6 c: the scanning electron of an embodiment according to the present invention, the tin silver connected structure of the semiconductor is aobvious
Micro mirror (SEM) image, scanning electron microscope additional-energy Dispersive Spectrometer (SEM/EDS) elemental analysis map and element point
Analyse table.
Fig. 7 a to Fig. 7 c: the scanning electron of an embodiment according to the present invention, the tin silver connected structure of the semiconductor is aobvious
Micro mirror (SEM) image, scanning electron microscope additional-energy Dispersive Spectrometer (SEM/EDS) elemental analysis map and element point
Analyse table.
[main element symbol description]
10: the manufacturing method 11 of the tin silver connected structure of semiconductor: offer connects layers of copper
12: carrying out activation step 13: carrying out the first electroless plating reaction
14: carrying out the second electroless plating reaction 100: the tin silver connected structure of semiconductor
110: connecting layers of copper 111: the first and appear face
120: tin coating 121: the second appears face
130: silvering 200: support plate
Specific embodiment
Referring to Fig. 1, it is one embodiment of the invention, a kind of packet of manufacturing method 10 of the tin silver connected structure of semiconductor
Containing " offer connects layers of copper " 11, " carrying out activation step " 12, " carrying out the first electroless plating reaction " 13 and " it is anti-to carry out the second chemical plating
Answer " 14.
Fig. 1, Fig. 2 a and Fig. 2 b are please referred to, provides connect layers of copper 110 first, this connects layers of copper 110 and appears face with first
111, Fig. 2 a is please referred to, this connects layers of copper 110 and is formed in support plate 200, and it can be copper wire or other semiconductors that this, which connects layers of copper 110,
Connect element (such as copper bump or copper post), but the present invention is not limited thereto system, as shown in Figure 2 b, this connects layers of copper 110 can
For copper particle.
Referring to Fig. 1, then carries out activation step, layers of copper 110 is connected with this and contacts acid solution, the acid solution to
This connects this of layers of copper 110 and first appears face 111 microetch (pickling), to remove first oxide on surface for appearing face 111,
The acid solution is removed after the completion of the activation step, and this is cleaned with deionized water and connects layers of copper 110, preferably, the acidity is molten
Liquid is copper sulphate (CuSO4), which carries out between 30 to 60 degree Celsius.
Fig. 1, Fig. 3 a and Fig. 3 b are please referred to, the first electroless plating reaction is carried out after the activation step, layers of copper 110 is connected with this
This first appear face 111 and contact stanniferous plating solution (figure do not draw), make the stanniferous plating solution with this connect layers of copper 110 carry out this first
Electroless plating reaction (tin copper displacement reaction), to connect this of layers of copper 110 and first appear face 111 and directly form tin coating 120 at this,
The tin coating 120 has second to appear face 121, removes the stanniferous plating solution after the completion of first electroless plating reaction, and with deionization
Water cleans the tin coating 120, preferably, the stanniferous plating solution is stannous sulfate (SnSO4), first electroless plating reaction is Celsius 40
It is carried out between to 90 degree, is formed by 120 thickness of tin coating between 0.1 to 10 μm.
Fig. 1, Fig. 4 a and Fig. 4 b are please referred to, carries out the second electroless plating reaction after first electroless plating reaction, with tin plating
This of layer 120 second appears the contact of face 121 containing silver plating solution (figure do not draw), preferably, this contains the concentration of silver ions in silver plating solution
Between 0.001 between 2wt%, this contains silver plating solution and the tin coating 120 carries out second electroless plating reaction, in the tin coating
120 this second appear face 121 directly formed silvering 130, wherein the part silver atoms in the silvering 130 can diffuse to this
Tin coating 120, thus the silvering 130 can inhibit the tin coating 120 this second appear face 121 formed tin must, to avoid hair
Raw line short, this is finally removed after the completion of second electroless plating reaction and contains silver plating solution, and cleans the silver using deionized water
Coating 130, to obtain the tin silver connected structure 100 of the semiconductor, preferably, it is silver nitrate (AgNO that this, which contains silver plating solution,3), this
Two electroless plating reactions carry out between 40 to 80 degree Celsius, are formed by 130 thickness of silvering no more than 2 μm, more preferably, are somebody's turn to do
The thickness of silvering 130 is between 0.01 to 1 μm.
When the tin silver connected structure 100 of the semiconductor is engaged with another semiconductor structure, the silver in the silvering 130 is former
Son can be diffused in reflow process in the scolding tin of the tin coating 120 and another semiconductor structure, therefore the silvering 130 can be same
When inhibit the semiconductor tin silver connected structure 100 the tin coating 120 and another semiconductor structure scolding tin generate tin palpus.
Fig. 5 a to Fig. 7 c is please referred to, to use the different tests for containing silver plating solution (0.001wt%, 0.1wt% and 2wt%)
As a result, Fig. 5 a, Fig. 6 a and Fig. 7 a are scanning electron microscope (SEM) image of the tin silver connected structure 100 of the semiconductor, figure
5b, Fig. 6 b and Fig. 7 b are the scanning electron microscope additional-energy Dispersive Spectrometer of the tin silver connected structure 100 of the semiconductor
(SEM/EDS) elemental analysis map, cps/eV are counting/electron-volt per second, and KeV is kilo electron volt, and Cu is copper atom, Ag
For silver atoms, Sn is tin atom, and Fig. 5 c, Fig. 6 c and Fig. 7 c are the elemental analysis table of the tin silver connected structure 100 of the semiconductor,
Wt% is weight percentage, and atomic% is atomic percent.
Please refer to Fig. 5 a to Fig. 5 c, according to test result it is found that using 0.001wt% concentration of silver ions containing silver plating solution into
Row second electroless plating reaction second can appear in this of the tin coating 120 really and form the silvering 130 on face 121, identical
Ground, (Fig. 6 a is extremely after carrying out second electroless plating reaction containing silver plating solution using 0.1wt% and 2wt% concentration of silver ions respectively
Fig. 6 c and Fig. 7 a to Fig. 7 c), the silvering 130 can be also formed on the tin coating 120.
The response parameter (argentiferous bath concentration, reaction time or the reaction temperature) of second electroless plating reaction will affect this
130 thickness of silvering is formed by the silver when the argentiferous bath concentration is lower, the reaction time is shorter or reaction temperature is lower
130 thinner thickness of coating, however 130 thickness of silvering will not influence its effect for inhibiting tin beard and hair raw, different-thickness is somebody's turn to do
Silvering 130 all has effects that inhibit tin palpus, therefore the present invention need not be precisely controlled the reaction ginseng of second electroless plating reaction
Number can form the silvering 130 to inhibit tin palpus, have effects that simplified manufacturing process.
The above described is only a preferred embodiment of the present invention, limitation in any form not is done to the present invention, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above are modified or are modified
For the equivalent embodiment of equivalent variations, but anything that does not depart from the technical scheme of the invention content, according to the technical essence of the invention
Any simple modification, equivalent change and modification made to the above embodiment, all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. a kind of tin silver connected structure of semiconductor, it is characterised in that it includes:
Layers of copper is connected, has first to appear face；
Tin coating, is formed directly into this and connects this of layers of copper and first appear face, and stanniferous plating solution, which with this connects layers of copper, to carry out first and change
Plating reaction is learned to form the tin coating, which has second to appear face；And
Silvering, this for being formed directly into the tin coating second appear face, carry out the second chemical plating containing silver plating solution and the tin coating
Reaction to form the silvering, the silvering to inhibit the tin coating this second appear face formed tin palpus.
2. the tin silver connected structure of semiconductor according to claim 1, it is characterised in that: wherein the thickness of the tin coating is situated between
Between 0.1 to 10 μm.
3. the tin silver connected structure of semiconductor according to claim 1, it is characterised in that: wherein the thickness of the silvering is not
Greater than 2 μm.
4. the tin silver connected structure of semiconductor according to claim 1, it is characterised in that: wherein the thickness of the silvering is situated between
Between 0.01 to 1 μm.
5. a kind of manufacturing method of the tin silver connected structure of semiconductor, it is characterised in that it includes:
Offer connects layers of copper, this connects layers of copper and appears face with first；
Carry out the first electroless plating reaction, this connect layers of copper this first appear the stanniferous plating solution of face contact, which leads with this
It connects layers of copper and carries out first electroless plating reaction, to connect this of layers of copper and first appear face and directly form tin coating at this, tin plating
Layer has second to appear face；And
Carry out the second electroless plating reaction, this of the tin coating second appears face contact containing silver plating solution, this contains silver plating solution and the tin plates
Layer carry out second electroless plating reaction, directly form silvering to appear face in this of the tin coating second, the silvering to
Inhibit the tin coating this second appear face formed tin palpus.
6. the manufacturing method of the tin silver connected structure of semiconductor according to claim 5, it is characterised in that: the wherein argentiferous
Silver content in plating solution is between 0.001 between 2wt%.
7. the manufacturing method of the tin silver connected structure of semiconductor according to claim 5, it is characterised in that: wherein the tin plates
The thickness of layer is between 0.1 to 10 μm.
8. the manufacturing method of the tin silver connected structure of semiconductor according to claim 5, it is characterised in that: wherein the silver plates
The thickness of layer is not more than 2 μm.
9. the manufacturing method of the tin silver connected structure of semiconductor according to claim 5, it is characterised in that: wherein the silver plates
The thickness of layer is between 0.01 to 1 μm.
10. the manufacturing method of the tin silver connected structure of semiconductor according to claim 5, it is characterised in that: wherein at this
Activation step is additionally comprised before first electroless plating reaction, to remove first oxide on surface for appearing face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710827840.9A CN109509731A (en) | 2017-09-14 | 2017-09-14 | The tin silver connected structure and its manufacturing method of semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710827840.9A CN109509731A (en) | 2017-09-14 | 2017-09-14 | The tin silver connected structure and its manufacturing method of semiconductor |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002317295A (en) * | 2001-04-19 | 2002-10-31 | Furukawa Electric Co Ltd:The | REFLOW TREATED Sn ALLOY PLATING MATERIAL AND FIT TYPE CONNECTING TERMINAL USING THE SAME |
| US20020185716A1 (en) * | 2001-05-11 | 2002-12-12 | Abys Joseph Anthony | Metal article coated with multilayer finish inhibiting whisker growth |
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| CN1848305A (en) * | 2005-04-06 | 2006-10-18 | 株式会社三铃 | Electronic assembly wire and flat cable comprising same |
| CN101283119A (en) * | 2005-10-03 | 2008-10-08 | 上村工业株式会社 | Method of surface treatment for the inhibition of whiskers |
| CN101534603A (en) * | 2008-03-13 | 2009-09-16 | 日立电线株式会社 | Conductor used in flexible substrate, method for producing conductor, and flexible substrate |
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2017
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002317295A (en) * | 2001-04-19 | 2002-10-31 | Furukawa Electric Co Ltd:The | REFLOW TREATED Sn ALLOY PLATING MATERIAL AND FIT TYPE CONNECTING TERMINAL USING THE SAME |
| US20020185716A1 (en) * | 2001-05-11 | 2002-12-12 | Abys Joseph Anthony | Metal article coated with multilayer finish inhibiting whisker growth |
| CN1649038A (en) * | 2004-01-30 | 2005-08-03 | 日立电线株式会社 | Conductor for flat cabal and its producing method and flat cabal |
| CN1848305A (en) * | 2005-04-06 | 2006-10-18 | 株式会社三铃 | Electronic assembly wire and flat cable comprising same |
| CN101283119A (en) * | 2005-10-03 | 2008-10-08 | 上村工业株式会社 | Method of surface treatment for the inhibition of whiskers |
| CN101534603A (en) * | 2008-03-13 | 2009-09-16 | 日立电线株式会社 | Conductor used in flexible substrate, method for producing conductor, and flexible substrate |
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