CN109502972A - A kind of preparation method of the electric substrate glass with boron anomalous effect - Google Patents
A kind of preparation method of the electric substrate glass with boron anomalous effect Download PDFInfo
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- CN109502972A CN109502972A CN201811540818.7A CN201811540818A CN109502972A CN 109502972 A CN109502972 A CN 109502972A CN 201811540818 A CN201811540818 A CN 201811540818A CN 109502972 A CN109502972 A CN 109502972A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
Abstract
The preparation method that the present invention discloses a kind of electric substrate glass with boron anomalous effect reduces the glass melting temperature of glass under conditions of meeting electric substrate glass requirement on electric performance, improve melting efficiency, viscosity is low when glass forms, and forming temperature is wide in range, and processability is good；The electric substrate glass of preparation is meeting glass transmission rate, resistivity, the coefficient of expansion, and under conditions of the performances such as mechanical strength, the dielectric constant and dielectric loss of glass are all lower, and has suitable thermal expansion coefficient and preferable mechanical performance；Preparation method glass smelting temperature of the present invention is low, and low energy consumption, at low cost, high production efficiency, energy conservation and environmental protection, is suitable for low cost and produces in enormous quantities, added value of product is high.
Description
Technical field
The present invention relates to electronic glasses, and in particular to a kind of preparation side of the electric substrate glass with boron anomalous effect
Method.
Background technique
Dielectric constant refers to the ability that substance keeps charge, be characterize one of dielectric or insulating materials electrical property it is important
Data, commonly using ε indicates.Nearly ten years, the research of semi-conductor industry bound pair advanced low-k materials is increasing, is situated between about glass
The research of electrical property is derived from glass fibre in the application of integrated circuit technology.Nowadays the dielectric properties of glass have become decision its
One of the index of electronic field application, good dielectric properties mean faster reaction speed and the loss of more existing fringing field.With such as
The rapid proliferation of the electronic products such as modern mobile phone, tablet computer, PDA, demand and functional requirement to high-performance display material also day
Benefit increases.There is more research to report the dielectric properties of glass fibre at present, but the dielectric about electric substrate glass
Performance study is rare to be related to.Basic material of the electric substrate glass as display, also requires that lower dielectric constant and Jie
Electrical loss.
Low dielectric constant is the relaxation and cross jamming in order to reduce signal, and low dielectric loss is to reduce height
Under frequency and big resistivity heat consumption it is excessive, preferably necessary to heat dissipation.Electric substrate glass market at present, mainly by U.S.'s health
Rather, Japan AGC, Electric Glass Co and Avanstrate are monopolized, and domestic electric substrate glass research starts late but also exists
It continues to develop.Electric substrate glass is aluminoborosilicate system, in addition to it is complete to meet performance requirement alkaline earth oxide
Entirely instead of alkali metal oxide.It is inevitable due to having higher endurance, mechanical strength and thermal stability requirement to base plate glass
A large amount of aluminium oxide can be added, so electric substrate glass belongs to a kind of high lead glass, is had viscous compared with high melt temperature and high temperature
Degree.In addition, the large scale of electric substrate glass, it is lightening and it is energy saving be following developing direction, for electric substrate glass
Dielectric properties requirement also can be higher and higher.
Added in glass system boron oxide can play it is fluxing, reduce the effects of high temperature viscosity, but work as boron oxide content
When having alkali metal or alkaline-earth metal in higher and glass composition, it may appear that " boron anomalous effect ", i.e., with boron oxide content
Increase, maximum and minimum are often generated in change of properties curve.The reason is that after network outer body is added, the free oxygen that provides
Make boron oxygen triangle body [BO3] (stratiform) be changed into boron oxygen tetrahedron [BO4] (rack-like), make the structure of boron from layer structure to rack-like
Structure transformation is B2O3With SiO2Uniform glass is formed to create conditions.So as to cause property mutation.
Chinese patent application CN108383378A discloses a kind of glass with low dielectric constant of borosilicate system, contains
SiO265~75wt%, B2O320~30wt%, Al2O31~2.5wt%, Na20~1.5wt% of O, K20~1.5wt% of O
And 0~1.5wt% of Li.Due to containing a large amount of boron oxide in glass, the network structure of glass is destroyed, high temperature viscosity drop
Low, dielectric constant and dielectric loss significantly reduce.Although the aluminium oxide being added takes part in network and is formed, alumina content compared with
Low, other performances (mechanical strength, high-temperature expansion coefficient) of glass are difficult to reach requirement.
Chinese patent application CN102923953A is prepared for a kind of glass with low dielectric constant plate, the low-k glass
The permittivity ε ﹤ 5F/m (1MHz) of glass plate is added to SnO in formula2、CeO2Compound clarifier, so that glass plate has preferably
Clarifying effect, and characteristic be suitble to float glass process or overflow down draw technique large-scale production.But formula contains a large amount of alkali gold
Belong to oxide, will lead to pollute producing line in process of production in this way.Without containing alkali gold in current electric substrate glass ingredient
Belong to oxide.
Chinese patent application CN105384335A, which is provided, a kind of with high strain-point and shows controllable etching speed
The preparation method of the alkali-free glass of rate.Alkali-free glass of the invention has controllable etch-rate, strain point height, high-temperature heat expansion
The advantages that coefficient is low, density is small.The glass is suitble in middle-size and small-size LED, OLED, particularly mobile terminal, digital camera, hand
It is used in the field of the portable displays such as machine.But its glass melting temperature is equally increased to 1700 DEG C, and excessively high melting temperature is not only
Production cost is increased, is also huge challenge for traditional refractory material and molding equipment.
Chinese patent application CN107531550A discloses a kind of chemical strengthening alkali aluminium boron of the manufacture with low-k
The preparation method of silicate glass.The low-k of glass improves sensibility, response time, power consumption and accuracy.
The dielectric constant of the glass is 5.3~6.0.And by ion-exchange process, by larger potassium ion to sodium smaller in glass from
Son replaces, the central stressed zone for making glass both side surface form a compressive stress layers and be clipped between compressive stress layers.System
The standby glass of the low-k of good mechanical performance a kind of out.But excessively high thermal expansion coefficient (53.0-70.0 × 10-7/
DEG C) lead to the base plate glass that cannot be used as liquid crystal display, and the base plate glass of existing market application is with alkali-free aluminium borosilicate
Based on glass system.
Chinese patent application CN102531401A provides a kind of dielectric glass fibre for electronic application.It can be used as
The reinforcing material of printed circuit board base board, and have relative to the lower dielectric constant of E glass fibre and more than D glass quotient
The feasible fiber forming properties energy of industry.The composition of the glass includes (in terms of weight %) SiO265~68wt%, B2O37~
13wt%, Al2O39~15wt%, Na20~1wt% of O, K20~1wt% of O, 0~1.5wt% of MgO, Fe2O30~
1wt%, TiO20~2wt% and other components 0~5%.
For to sum up, the dielectric constant and Loss Research about glass fibre are more, to the dielectricity of electric substrate glass
It can study relatively fewer.Nearly all contain alkali metal oxide in above-mentioned glass ingredient, but since electric substrate glass is being processed
Alkali metal ion can pollute producing line in the process, so being not allow containing alkali metal oxide, electric substrate glass is alkali-free
Aluminium borosilicate glass.In addition, boron oxide not only play the role of as a kind of glass former it is fluxing, and to the dielectric of glass
Performance has large effect.But excessive boron oxide will lead to glass structure strength reduction, the decline of part physicochemical property.Cause
This, needs a kind of glass for having high intensity with low-k.In general, the dielectric constant of electric substrate glass about 5.2 to
6.0。
Summary of the invention
To overcome above-mentioned the deficiencies in the prior art, the object of the present invention is to provide a kind of electronics bases with boron anomalous effect
The preparation method of glass sheet, the electric substrate glass dielectric constant of preparation is low, melting efficiency is high, thermal expansion coefficient is low, mechanical strong
Degree is high.
To achieve the above object, the technical solution adopted by the present invention is that:
A kind of preparation method of the electric substrate glass with boron anomalous effect, comprising the following steps:
Step 1) is according to feed molar percentage (mol%), the quartz sand of precise 65.5~68%, 8.5~
12.5% boric anhydride, 10.5~11.5% aluminium oxide, 2.1~2.3% magnesia, 8.4~8.8% calcium oxide, 0.50
~0.55% strontium oxide strontia, 0.07% tin oxide；
The raw material of weighing is sequentially placed into batch mixer by step 2), is uniformly mixed and is formed batch；
Batch addition is warming up in 1450 DEG C of corundum crucible by step 3)；Then, it is warming up to by 15~30min
1650~1680 DEG C and 2h is kept the temperature, furnace temperature is cooled to 1400~1420 DEG C from 1650~1680 DEG C by 30min and to glass
Liquid stirs 5min, finally, being warming up to 1650~1680 DEG C by 15~30min again and keeping the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1650~1680 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in 600 DEG C of mold, and the both bulk glasses with a thickness of 5~8mm are formed；
The glass of forming is put into 700~730 DEG C of annealing furnaces by step 6), keeps the temperature 30~60min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min, obtains through cutting and polishing with boron abnormality
The electric substrate glass of effect.
Further, in the step 5), shaping dies material used uses stainless steel, graphite or copper.
Further, in the step 2), by the raw material of weighing mix to the uniformity be greater than 99% after form batch.
Compared with prior art, the invention has the following beneficial technical effects:
Electric substrate glass prepared by the present invention has suitable thermal expansion coefficient and preferable mechanical performance, and glass
Dielectric constant and dielectric loss it is all lower.Preparation method of the present invention reduces glass smelting temperature, improves melting efficiency, glass
Viscosity is low when molding, and forming temperature is wide in range, and processability is good, high production efficiency, energy conservation and environmental protection, and it is raw to be suitable for low cost high-volume
It produces, added value of product is high.
Detailed description of the invention
Fig. 1 is variation diagram of the dielectric properties with boron oxide content
Specific embodiment
Present invention is further described in detail combined with specific embodiments below, but not as a limitation of the invention.
Embodiment 1:
Step 1), according to feed molar percentage (mol%), the quartz sand of precise 68%, 8.99% boric anhydride,
11.39% aluminium oxide, 2.27% magnesia, 8.73% calcium oxide, 0.55% strontium oxide strontia, 0.07% tin oxide；
The raw material of weighing is sequentially placed into batch mixer by step 2), mix to the uniformity be greater than 99% after form batch；
Batch addition has been warming up in 1450 DEG C of corundum crucible by step 3)；Then, it is warming up to by 15min
1650 DEG C, and after keeping the temperature 2h, furnace temperature is cooled to 1420 DEG C from 1650 DEG C by 30min, glass metal is carried out using agitating paddle
5min is stirred, temperature is maintained at 1420 DEG C in whipping process；Then 1650 DEG C are warming up to by 15min again, and keep the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1650 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in 600 DEG C of stainless steel mould, and the blocky glass with a thickness of 5mm is formed
Glass；
The glass of forming is put into 700 DEG C of annealing furnaces by step 6), keeps the temperature 30min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min to get the electronics base with boron anomalous effect
Glass sheet.
It is 5.637F/m with Agilent4294 impedance analyzer measurement permittivity ε, dielectric loss is 1.81 × 10-3, heat
Coefficient of expansion α is 31.87 × 10-7
Embodiment 2:
Step 1), according to feed molar percentage (mol%), the quartz sand of precise 67.59%, 9.84% boron
Acid anhydride, 11.06% aluminium oxide, 2.25% magnesia, 8.65% calcium oxide, 0.54% strontium oxide strontia, 0.07% oxidation
Tin；
The raw material of weighing is sequentially placed into batch mixer by step 2), mix to the uniformity be greater than 99% after form batch；
Batch addition has been warming up in 1450 DEG C of corundum crucible by step 3)；Then, it is warming up to by 20min
1660 DEG C, and after keeping the temperature 2h, furnace temperature is cooled to 1420 DEG C from 1660 DEG C by 30min, glass metal is carried out using agitating paddle
5min is stirred, temperature is maintained at 1420 DEG C in whipping process；Then 1660 DEG C are warming up to by 20min again, and keep the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1660 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in the mold of 600 DEG C of graphite materials, and the bulk with a thickness of 6mm is formed
Glass；
The glass of forming is put into 730 DEG C of annealing furnaces by step 6), keeps the temperature 35min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min to get the electronics base with boron anomalous effect
Glass sheet.
It is 5.751F/m with Agilent4294 impedance analyzer measurement permittivity ε, dielectric loss is 1.79 × 10-3, heat
Coefficient of expansion α is 37.35 × 10-7
Embodiment 3:
Step 1), according to feed molar percentage (mol%), the quartz sand of precise 66.96%, 10.67% boron
Acid anhydride, 10.96% aluminium oxide, 2.23% magnesia, 8.57% calcium oxide, 0.54% strontium oxide strontia, 0.07% oxidation
Tin；
The raw material of weighing is sequentially placed into batch mixer by step 2), mix to the uniformity be greater than 99% after form batch；
Batch addition has been warming up in 1450 DEG C of corundum crucible by step 3)；Then, it is warming up to by 25min
1670 DEG C, and after keeping the temperature 2h, furnace temperature is cooled to 1410 DEG C from 1670 DEG C by 30min, glass metal is carried out using agitating paddle
5min is stirred, temperature is maintained at 1410 DEG C in whipping process；Then 1670 DEG C are warming up to by 25min again, and keep the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1670 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in 600 DEG C of copper-made mould, and the both bulk glasses with a thickness of 7mm are formed；
The glass of forming is put into 720 DEG C of annealing furnaces by step 6), keeps the temperature 40min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min to get the electronics base with boron anomalous effect
Glass sheet.
It is 5.805F/m with Agilent4294 impedance analyzer measurement permittivity ε, dielectric loss is 1.77 × 10-3, heat
Coefficient of expansion α is 35.50 × 10-7
Embodiment 4:
Step 1), according to feed molar percentage (mol%), the quartz sand of precise 66.35%, 11.50% boron
Acid anhydride, 10.86% aluminium oxide, 2.20% magnesia, 8.49% calcium oxide, 0.53% strontium oxide strontia, 0.07% oxidation
Tin；
The raw material of weighing is sequentially placed into batch mixer by step 2), mix to the uniformity be greater than 99% after form batch；
Batch addition has been warming up in 1450 DEG C of corundum crucible by step 3)；Then, it is warming up to by 25min
1675 DEG C, and after keeping the temperature 2h, furnace temperature is cooled to 1400 DEG C from 1675 DEG C by 30min, glass metal is carried out using agitating paddle
5min is stirred, temperature is maintained at 1400 DEG C in whipping process；Then 1675 DEG C are warming up to by 25min again, and keep the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1675 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in 600 DEG C of mold, and the both bulk glasses with a thickness of 8mm are formed；
The glass of forming is put into 720 DEG C of annealing furnaces by step 6), keeps the temperature 50min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min to get the electronics base with boron anomalous effect
Glass sheet.
It is 5.932F/m with Agilent4294 impedance analyzer measurement permittivity ε, dielectric loss is 1.75 × 10-3, heat
Coefficient of expansion α is 36.80 × 10-7
Embodiment 5:
Step 1), according to feed molar percentage (mol%), the quartz sand of precise 65.74%, 12.3% boron
Acid anhydride, 10.76% aluminium oxide, 2.19% magnesia, 8.41% calcium oxide, 0.53% strontium oxide strontia, 0.07% oxidation
Tin；
The raw material of weighing is sequentially placed into batch mixer by step 2), mix to the uniformity be greater than 99% after form batch；
Batch addition has been warming up in 1450 DEG C of corundum crucible by step 3)；Then, it is warming up to by 30min
1680 DEG C, and after keeping the temperature 2h, furnace temperature is cooled to 1400 DEG C from 1680 DEG C by 30min, glass metal is carried out using agitating paddle
5min is stirred, temperature is maintained at 1400 DEG C in whipping process；Then 1680 DEG C are warming up to by 30min again, and keep the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1680 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in 600 DEG C of mold, and the both bulk glasses with a thickness of 8mm are formed；
The glass of forming is put into 710 DEG C of annealing furnaces by step 6), keeps the temperature 60min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min to get the electronics base with boron anomalous effect
Glass sheet.
It is 4.025F/m with Agilent4294 impedance analyzer measurement permittivity ε, dielectric loss is 1.74 × 10-3, heat
Coefficient of expansion α is 36.10 × 10-7
By Fig. 1, it can be seen that, with the increase of boron content, dielectric loss is constantly reduced, and dielectric constant was slowly increased before this,
Then it reduces suddenly.It is because boron oxide content increases, the network structure enhancing of glass, the movement for limiting conductive ion makes to be situated between
Electrical loss reduces, and drastically reducing for dielectric constant may be because of [BO after sample 43] to [BO4] transformation, [BO4] content
It gradually increases, quantitative change causes qualitative change, leads to the mutation of dielectric properties.
Embodiment 6:
Step 1), according to feed molar percentage (mol%), the quartz sand of precise 65.5%, 12.5% boric anhydride,
10.50% aluminium oxide, 2.30% magnesia, 8.63% calcium oxide, 0.5% strontium oxide strontia, 0.07% tin oxide；
The raw material of weighing is sequentially placed into batch mixer by step 2), mix to the uniformity be greater than 99% after form batch；
Batch addition has been warming up in 1450 DEG C of corundum crucible by step 3)；Then, it is warming up to by 30min
1680 DEG C, and after keeping the temperature 2h, furnace temperature is cooled to 1400 DEG C from 1680 DEG C by 30min, glass metal is carried out using agitating paddle
5min is stirred, temperature is maintained at 1400 DEG C in whipping process；Then 1680 DEG C are warming up to by 30min again, and keep the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1680 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in 600 DEG C of mold, and the both bulk glasses with a thickness of 8mm are formed；
The glass of forming is put into 730 DEG C of annealing furnaces by step 6), keeps the temperature 60min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min to get the electronics base with boron anomalous effect
Glass sheet.
Embodiment 7:
Step 1), according to feed molar percentage (mol%), the quartz sand of precise 65.93%, 12.5% boron
Acid anhydride, 10.50% aluminium oxide, 2.10% magnesia, 8.40% calcium oxide, 0.5% strontium oxide strontia, 0.07% oxidation
Tin；
The raw material of weighing is sequentially placed into batch mixer by step 2), mix to the uniformity be greater than 99% after form batch；
Batch addition has been warming up in 1450 DEG C of corundum crucible by step 3)；Then, it is warming up to by 30min
1680 DEG C, and after keeping the temperature 2h, furnace temperature is cooled to 1400 DEG C from 1680 DEG C by 30min, glass metal is carried out using agitating paddle
5min is stirred, temperature is maintained at 1400 DEG C in whipping process；Then 1680 DEG C are warming up to by 30min again, and keep the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1680 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in 600 DEG C of mold, and the both bulk glasses with a thickness of 8mm are formed；
The glass of forming is put into 720 DEG C of annealing furnaces by step 6), keeps the temperature 60min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min to get the electronics base with boron anomalous effect
Glass sheet.
Embodiment 8:
Step 1), according to feed molar percentage (mol%), the quartz sand of precise 65.93%, 12.1% boron
Acid anhydride, 10.50% aluminium oxide, 2.10% magnesia, 8.80% calcium oxide, 0.5% strontium oxide strontia, 0.07% oxidation
Tin；
The raw material of weighing is sequentially placed into batch mixer by step 2), mix to the uniformity be greater than 99% after form batch；
Batch addition has been warming up in 1450 DEG C of corundum crucible by step 3)；Then, it is warming up to by 30min
1680 DEG C, and after keeping the temperature 2h, furnace temperature is cooled to 1400 DEG C from 1680 DEG C by 30min, glass metal is carried out using agitating paddle
5min is stirred, temperature is maintained at 1400 DEG C in whipping process；Then 1680 DEG C are warming up to by 30min again, and keep the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1680 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in 600 DEG C of mold, and the both bulk glasses with a thickness of 8mm are formed；
The glass of forming is put into 700 DEG C of annealing furnaces by step 6), keeps the temperature 60min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min to get the electronics base with boron anomalous effect
Glass sheet.
The present invention reduces the glass melting temperature of glass, mentions under conditions of meeting electric substrate glass dielectric performance requirement
High melting efficiency, viscosity is low when glass forms, and forming temperature is wide in range, and processability is good.The present invention is meeting glass transmission rate,
Resistivity, the coefficient of expansion, under conditions of the performances such as mechanical strength, the dielectric constant and dielectric loss of glass are all lower.Described
Glass production is high-efficient, energy conservation and environmental protection, is suitable for low cost and produces in enormous quantities, and added value of product is high, can be in lower forming temperature
Lower to use overflow, under drawing, the methods of float glass process is produced.Prepared electric substrate glass mechanical strength with higher, compared with
Good chemical stability, suitable thermal expansion coefficient are suitable for mobile phone, smart phone, tablet computer, laptop,
Television set, wrist-watch, the protective glass and protective window of the devices such as industrial display, automotive window, train vehicle window, aviation machine
Window and hard disk substrate, may be simultaneously used on white domestic appliances, such as refrigerator and kitchen tools.Therefore, have with prepared by this method
The low-k electric substrate glass of boron anomalous effect has considerable economic and social benefit, and application prospect is very wide.
Finally it should be noted that: the above examples are only used to illustrate the technical scheme of the present invention rather than its limitations, to the greatest extent
Pipe is described the invention in detail referring to above-described embodiment, it should be understood by those ordinary skilled in the art that: still may be used
With modifications or equivalent substitutions are made to specific embodiments of the invention, and repaired without departing from any of spirit and scope of the invention
Change or equivalent replacement, should all cover in present claims range.
Claims (3)
1. a kind of preparation method of the electric substrate glass with boron anomalous effect, it is characterised in that the following steps are included:
Step 1) is according to feed molar percentage (mol%), the quartz sand of precise 65.5~68%, 8.5~12.5%
Boric anhydride, 10.5~11.5% aluminium oxide, 2.1~2.3% magnesia, 8.4~8.8% calcium oxide, 0.50~0.55%
Strontium oxide strontia, 0.07% tin oxide；
The raw material of weighing is sequentially placed into batch mixer by step 2), is uniformly mixed and is formed batch；
Batch addition is warming up in 1450 DEG C of corundum crucible by step 3)；Then, 1650 are warming up to by 15~30min
~1680 DEG C and 2h is kept the temperature, furnace temperature is cooled to 1400~1420 DEG C from 1650~1680 DEG C by 30min and glass metal is stirred
Mix 5min；Finally, being warming up to 1650~1680 DEG C by 15~30min again and keeping the temperature 2h；
Furnace temperature is cooled to 1300 DEG C from 1650~1680 DEG C by 30min by step 4)；
Step 5) is poured into 1300 DEG C of glass metal in 600 DEG C of mold, and the both bulk glasses with a thickness of 5~8mm are formed；
The glass of forming is put into 700~730 DEG C of annealing furnaces by step 6), keeps the temperature 30~60min；
Step 7) is cooled to room temperature according to the cooling rate of 1~3 DEG C/min, obtains with boron anomalous effect through cutting and polishing
Electric substrate glass.
2. preparation method as described in claim 1, it is characterised in that: in the step 5), shaping dies material used
Using stainless steel, graphite or copper.
3. preparation method as described in claim 1, it is characterised in that: in the step 2), the raw material of weighing is mixed to equal
Evenness forms batch after being greater than 99%.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109704574A (en) * | 2019-03-01 | 2019-05-03 | 陕西科技大学 | A kind of light-high-strength electric substrate glass and preparation method |
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