CN109502545B - Germanium selenide based sunlight decomposition water hydrogen production electronic device, electrode system and preparation method thereof - Google Patents

Germanium selenide based sunlight decomposition water hydrogen production electronic device, electrode system and preparation method thereof Download PDF

Info

Publication number
CN109502545B
CN109502545B CN201811179844.1A CN201811179844A CN109502545B CN 109502545 B CN109502545 B CN 109502545B CN 201811179844 A CN201811179844 A CN 201811179844A CN 109502545 B CN109502545 B CN 109502545B
Authority
CN
China
Prior art keywords
layer
germanium selenide
electrode
temperature heating
sunlight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811179844.1A
Other languages
Chinese (zh)
Other versions
CN109502545A (en
Inventor
江丰
喻乐
王康
黄定旺
冯旷
李林涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China Normal University
Original Assignee
South China Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China Normal University filed Critical South China Normal University
Priority to CN201811179844.1A priority Critical patent/CN109502545B/en
Publication of CN109502545A publication Critical patent/CN109502545A/en
Application granted granted Critical
Publication of CN109502545B publication Critical patent/CN109502545B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
    • C01B3/04—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of inorganic compounds, e.g. ammonia
    • C01B3/042—Decomposition of water
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
    • C01B2203/02—Processes for making hydrogen or synthesis gas
    • C01B2203/0266—Processes for making hydrogen or synthesis gas containing a decomposition step
    • C01B2203/0277—Processes for making hydrogen or synthesis gas containing a decomposition step containing a catalytic decomposition step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)

Abstract

The invention discloses a germanium selenide-based electronic device for producing hydrogen by decomposing water through sunlight and a preparation method thereof. The invention utilizes the characteristics that the forbidden bandwidth of germanium selenide is very matched with the solar spectrum (1.15eV), the light absorption coefficient is large, the raw materials are cheap and non-toxic, and the growth temperature is low, and designs the absorption layer material to be applied to the device for decomposing water and producing hydrogen by sunlight for the first time, thereby preparing the device for decomposing water and producing hydrogen by germanium selenide based sunlight, and the efficiency of the device for decomposing water and producing hydrogen by sunlight breaks through 1 percent.

Description

Germanium selenide based sunlight decomposition water hydrogen production electronic device, electrode system and preparation method thereof
Technical Field
The invention relates to the field of photolysis water, in particular to a germanium selenide based electronic device for producing hydrogen by decomposing sunlight, an electrode system and a preparation method thereof.
Background
In the modern society where the conventional fossil fuel is gradually exhausted, the energy problem becomes one of the most serious tests for human development. Hydrogen, a clean energy source, burns 2.7 times as much calorific value as gasoline of the same quality, and is considered as a fuel most likely to solve the energy crisis. The photolysis of water to produce hydrogen is very goodThe hydrogen production method with considerable effect and prospect can realize the efficient hydrogen production by decomposing water by sunlight under the external bias by using the semiconductor film which is manufactured by the characteristic that the semiconductor with narrow forbidden band width absorbs the sunlight energy. Stable hydrogen production has been achieved using quaternary compound semiconductors such as Copper Indium Gallium Selenide (CIGS), Copper Zinc Tin Sulfide (CZTS), and the like as absorber layer materials. However, the semiconductor is a multi-component system, the thermodynamic stability interval is small, the control of film components and lattice defects is too complex, so that impurities and defects in the material are too many, and the actual efficiency is difficult to further improve. Like the currently studied thermal perovskite solar cell, although the photoelectric conversion efficiency reaches 17.9%, the light absorbing material contains toxic elements and is soluble in water, so that the light absorbing material cannot be used for producing hydrogen by decomposing water with sunlight. And the raw material is cheap Cu2O is also difficult to be an ideal material for producing hydrogen by photolysis water due to the large forbidden band width (2.17eV) and low theoretical photoelectric conversion efficiency.
Disclosure of Invention
Aiming at the defects in the prior art, the invention mainly aims to provide a germanium selenide-based sunlight decomposition water hydrogen production electronic device, an electrode system and a preparation method thereof.
In order to achieve the purpose, the invention at least adopts the following technical scheme:
a germanium selenide based electronic device for producing hydrogen by decomposing sunlight is characterized by comprising,
a substrate;
a back electrode layer on the substrate;
a germanium selenide absorber layer on the electrode layer;
a buffer layer on the germanium selenide layer;
a protective layer on the buffer layer.
Further, the device further includes metal nanoparticles attached to the protective layer.
Further, the buffer layer is CdS, and the protective layer is TiO2。
Further, the material of the metal nanoparticles is Pt or Au.
Further, the substrate is a soda-lime glass substrate, and the back electrode is Mo, FTO, ITO or AZO.
Further, the thickness of the germanium selenide absorption layer is 500nm-10 μm.
Further, the thickness of the buffer layer is 30-150nm, and the thickness of the protective layer is 0.01-100 μm.
Electrode system comprising a working electrode, an Ag/AgCl reference electrode and a Pt counter electrode, characterized in that the device according to one of claims 1 to 7 is used as the working electrode.
The preparation method of the germanium selenide based electronic device for producing hydrogen by decomposing water by sunlight is characterized by comprising the following steps,
depositing an electrode layer on a soda-lime glass substrate;
growing a germanium selenide absorption layer on the electrode layer by adopting a rapid thermal evaporation method;
depositing a CdS buffer layer on the germanium selenide absorption layer by adopting a chemical water bath deposition method;
preparing a protective layer on the CdS buffer layer;
depositing metal nanoparticles on the protective layer.
Further, the step of growing the germanium selenide absorption layer on the electrode layer by adopting a rapid thermal evaporation method specifically comprises the steps of placing germanium selenide powder in a tube furnace, and depositing the germanium selenide powder on the electrode layer through low-temperature heating and high-temperature heating in sequence, wherein the low-temperature heating temperature is 150-380 ℃, the low-temperature heating time is 1-60 min, the high-temperature heating temperature is 400-650 ℃, and the high-temperature heating time is 1-300 min.
Compared with the prior art, the invention at least has the following beneficial effects:
(1) the invention utilizes the characteristics that the forbidden bandwidth of germanium selenide is very matched with the solar spectrum (1.15eV), the light absorption coefficient is large, the raw materials are cheap and non-toxic, and the growth temperature is low, and designs the absorption layer material to be applied to the device for decomposing water and producing hydrogen by sunlight for the first time, thereby preparing the device for decomposing water and producing hydrogen by germanium selenide based sunlight, and the efficiency of the device for decomposing water and producing hydrogen by sunlight breaks through 1 percent.
(2) The germanium selenide is prepared by a rapid thermal evaporation method, the preparation process is simple, the preparation method can realize continuous control of the thickness of the film on a nanometer level, and the method utilizes the characteristic that impurities can be eliminated in the evaporation process due to different boiling points of different materials, so that the germanium selenide film obtained by evaporation has very high purity, and the crystallization defects caused by the impurities are few. The optical band gap of the germanium selenide film prepared by the invention is 1.13eV, the germanium selenide film is matched with the solar spectrum very well, and the germanium selenide film is an excellent light absorption layer material.
Drawings
Fig. 1 is a schematic diagram illustrating a preparation principle of germanium selenide of the material of the absorption layer of the invention.
Fig. 2 is a schematic structural diagram of an electronic device for producing hydrogen by germanium selenide-based photolysis according to an embodiment of the invention.
FIG. 3 shows Pt/TiO compounds of the present invention2Current-time test diagram of/CdS/GeSe/Mo/glass structure.
FIG. 4 shows Pt/TiO of the present invention2LSV curve diagram of/CdS/GeSe/Mo/glass structure.
FIG. 5 is an SEM image of GeSe obtained by the preparation method of the invention.
FIG. 6 is an XRD pattern of GeSe obtained by the present invention.
FIG. 7 shows a Raman spectrum of GeSe obtained by the present invention.
FIG. 8 shows Pt/TiO particles according to the present invention2The structure of/CdS/GeSe/Mo/glass is a photo of an electrode system formed when a working electrode is used for producing hydrogen.
FIG. 9 shows Pt/TiO particles according to the present invention2And when the structure of the/CdS/GeSe/Mo/glass is the working electrode, an electrode system formed by the working electrode is used for decomposing water to produce hydrogen under illumination.
Detailed Description
The present invention will be described in further detail below.
Fig. 1 is a schematic diagram illustrating the preparation principle of germanium selenide which is a material of the absorption layer of the invention. As shown in the figure, germanium selenide powder is heated to evaporate and deposit on a substrate to form a germanium selenide thin film.
FIG. 2 illustrates germanium selenide based solar photodecomposition of the inventionThe structure of the water-hydrogen production electronic device comprises a substrate, a back electrode layer positioned on the substrate, a GeSe absorption layer positioned on the back electrode layer, a buffer layer positioned on the GeSe absorption layer, a protective layer positioned on the buffer layer and a nano metal particle layer attached on the protective layer. Specifically, the substrate may be a soda-lime glass substrate, the back electrode may be a Mo electrode, an FTO, an ITO, an AZO, or the like, in this embodiment, the back electrode is a Mo electrode, the Mo electrode has a thickness of about 1 micron, the GeSe absorbing layer has a thickness of 500nm to 10 microns, the buffer layer is a CdS buffer layer, the CdS buffer layer has a thickness of 30nm to 150nm, and the protective layer may be a TiO buffer layer2Protective layer of said TiO2The thickness of the protective layer is 0.01-100 micrometers, the nano metal particle layer can be Pt or Au, in the embodiment, the nano metal particle layer is Pt, Pt is used as transition metal, the performance for catalyzing hydrogen evolution electrochemical reaction is excellent, because the transition metal has special d orbitals, the transition metal has lone pair electrons of the d orbitals or empty d orbitals, and the lone pair electrons can be provided to act as a nucleophilic reagent in chemical reaction or the empty orbitals can be provided to act as an electrophilic reagent. In the photoelectrochemistry hydrogen evolution reaction process, Pt provides enough active sites to serve as electrophilic reagents, reaction is promoted by reducing reaction activation energy, the hydrogen evolution rate is increased, and the catalytic effect is achieved.
The preparation method of the germanium selenide sunlight decomposed water hydrogen production electronic device specifically comprises the following steps:
and depositing a Mo layer on the soda-lime glass substrate by adopting a magnetron sputtering method, wherein the deposition thickness is about 1 micron, thereby forming the conductive substrate.
The germanium selenide film is prepared on the Mo layer by a rapid thermal evaporation method (RTP), and the method specifically comprises the following steps:
first, 3g of germanium selenide powder is weighed and uniformly spread in one side of a graphite box, and the Mo layer of a soda-lime glass substrate deposited with a Mo layer is placed on the other side of the graphite box with the Mo layer facing upwards. And (3) putting the graphite box into a rapid annealing furnace, starting a mechanical pump, starting heating when the air pressure is stabilized to be about 1Pa, raising the temperature to 200 ℃ within 10s, then preserving the heat for 30min, raising the temperature to 450 ℃ within 10s again, and preserving the heat for 120 min. And then taking out the soda-lime glass substrate when the soda-lime glass substrate is cooled to room temperature along with the furnace, thereby depositing a GeSe absorption layer on the Mo layer of the soda-lime-silica glass substrate, wherein the thickness of the GeSe absorption layer is 5 microns.
A CdS buffer layer is deposited on a GeSe absorption layer to serve as an n-type conducting layer, and the CdS buffer layer is prepared through a chemical water bath deposition method, so that the preparation method is very simple and specifically comprises the following steps:
taking CdSO435mmol/L、SC(NH2)26mol/L、NH4OH 25mol/L to obtain a mixed solution;
and (3) soaking the prepared conductive substrate containing the GeSe absorption layer in the mixed solution, heating to 80 ℃, and carrying out water bath reaction for 60min to deposit a CdS buffer layer on the GeSe absorption layer.
In this example, TiO having very good light transmittance was used2Nano film as a protective layer for uniform coverage to ensure its stability over a long period of time, and TiO2The protective layer is prepared by adopting an ALD method, a titanium oxide layer is prepared by taking tetra (dimethylamino) titanium as a titanium source and water as an oxygen source at 180 ℃, and the deposition thickness is 200nm, so that TiO covering the CdS buffer layer is obtained2And a protective layer.
The CdS/GeSe/Mo/glass with the protective layer prepared is used for preparing nano Pt particles by an electroplating method, and the nano Pt particles play a role in catalyzing and decomposing water to produce hydrogen so as to form the germanium selenide based electronic device for decomposing water by sunlight.
The electrode system of the assembled electrode system of the sunlight water decomposition hydrogen production electronic device is of a three-electrode type and respectively comprises an Ag/AgCl reference electrode, a Pt counter electrode and the germanium selenide-based sunlight water decomposition hydrogen production electronic device as a working electrode, wherein the germanium selenide-based sunlight water decomposition hydrogen production electronic device as the working electrode can be Pt/TiO2a/CdS/GeSe/Mo/glass structure. When the water is decomposed to produce hydrogen under illumination, the three electrodes are placed into a prepared buffer solution together, the PH range of the buffer solution is 1-14, and the water-splitting hydrogen production can be realized under the illumination of a simulated solar light source under the external bias.
Fig. 3 is a current-time curve of hydrogen production under illumination of the germanium selenide-based sunlight decomposition water hydrogen production electronic device, and it can be seen from the graph that under long-time illumination conditions, the device outputs relatively stable current density and presents larger current density.
FIG. 4 shows Pt/TiO particles according to an embodiment of the present invention2According to the LSV curve diagram of the structure of/CdS/GeSe/Mo/glass, the leakage current of the germanium selenide-based electronic device for producing hydrogen by decomposing water by sunlight is very small, the filling factor is high, the current density is large (the photocurrent is 15.8 milliamperes per square centimeter when the reversible hydrogen potential is-0.4V), and the efficiency of the device for producing hydrogen by decomposing water is directly improved.
FIG. 5 is a SEM image of GeSe obtained by the present invention, which shows that GeSe has good crystallinity and dense structure. Fig. 6 is an XRD pattern of GeSe prepared by the present invention, and comparing the prepared germanium selenide film with a standard card, it can be seen that the germanium selenide film prepared by the present invention has almost no impurity phase. FIG. 7 is a Raman spectrum of GeSe, in which the positions of two characteristic peaks are shown as 150cm-1 and 188cm-1, respectively, which is consistent with the positions of the characteristic peaks of the Raman spectrum of actual GeSe, and thus it is confirmed that GeSe is indeed produced. FIG. 8 is a photograph of the electronic device when actually producing hydrogen, from which hydrogen bubbles can be clearly seen, confirming that the material is indeed feasible for producing hydrogen by photolysis of water.
FIG. 9 shows Pt/TiO particles according to the present invention2When the structure of/CdS/GeSe/Mo/glass is used as a working electrode, the formed electrode system decomposes water under illumination to produce hydrogen, and the graph shows that the obtained efficiency is 1.02% under the voltage of 0.15V.
Therefore, the germanium selenide is prepared by adopting a rapid thermal evaporation method, the preparation process is simple, the preparation method can realize continuous control of the thickness of the film on a nanometer level, and the method utilizes the characteristic that different materials have different boiling points and can remove impurities in the evaporation process, so that the germanium selenide film obtained by evaporation has very high purity and has few crystallization defects caused by the impurities. The optical band gap of the germanium selenide film prepared by the invention is 1.13eV, the germanium selenide film is matched with the solar spectrum very well, and the germanium selenide film is an excellent light absorption layer material.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (9)

1. A germanium selenide based electronic device for producing hydrogen by decomposing sunlight is characterized by comprising,
a substrate;
a back electrode layer on the substrate;
a germanium selenide absorber layer on the electrode layer;
a buffer layer on the germanium selenide absorber layer;
a protective layer on the buffer layer, the protective layer being TiO2；
The germanium selenide absorption layer is prepared by the following method: laying germanium selenide powder on one side of a graphite box, placing the surface of the substrate provided with an electrode layer on the other side of the graphite box, placing the graphite box in a tubular furnace, and depositing the germanium selenide powder on the electrode layer through low-temperature heating and high-temperature heating in sequence, wherein the low-temperature heating temperature is 150-380 ℃, the low-temperature heating time is 1-60 min, the high-temperature heating temperature is 400-650 ℃, and the high-temperature heating time is 1-300 min.
2. The device of claim 1, further comprising metal nanoparticles attached to the protective layer.
3. The device of claim 1 or 2, wherein the buffer layer is CdS.
4. The device of claim 2, wherein the material of the metal nanoparticles is Pt or Au.
5. The device according to claim 1 or 2, wherein the substrate is a soda lime glass substrate and the back electrode is Mo, FTO, ITO or AZO.
6. The device of claim 1 or 2, wherein the germanium selenide absorber layer has a thickness of 500nm-10 μm.
7. The device of claim 3, wherein the buffer layer has a thickness of 30-150nm and the protective layer has a thickness of 0.01-100 μm.
8. Electrode system comprising a working electrode, an Ag/AgCl reference electrode and a Pt counter electrode, characterized in that the device according to one of claims 1 to 7 is used as the working electrode.
9. The preparation method of the germanium selenide based electronic device for producing hydrogen by decomposing water by sunlight is characterized by comprising the following steps,
depositing an electrode layer on a soda-lime glass substrate;
growing a germanium selenide absorption layer on the electrode layer by adopting a rapid thermal evaporation method;
depositing a CdS buffer layer on the germanium selenide absorption layer by adopting a chemical water bath deposition method;
preparing TiO on the CdS buffer layer2A protective layer;
depositing metal nanoparticles on the protective layer;
the method for growing the germanium selenide absorption layer on the electrode layer by adopting the rapid thermal evaporation method specifically comprises the steps of paving germanium selenide powder on one side of a graphite box, placing the side, on which the electrode layer is deposited, of the soda lime glass substrate on the other side of the graphite box, placing the graphite box in a tubular furnace, and depositing the germanium selenide powder on the electrode layer through low-temperature heating and high-temperature heating successively, wherein the low-temperature heating temperature is 150-380 ℃, the low-temperature heating time is 1-60 min, the high-temperature heating temperature is 400-650 ℃, and the high-temperature heating time is 1-300 min.
CN201811179844.1A 2018-10-10 2018-10-10 Germanium selenide based sunlight decomposition water hydrogen production electronic device, electrode system and preparation method thereof Active CN109502545B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811179844.1A CN109502545B (en) 2018-10-10 2018-10-10 Germanium selenide based sunlight decomposition water hydrogen production electronic device, electrode system and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811179844.1A CN109502545B (en) 2018-10-10 2018-10-10 Germanium selenide based sunlight decomposition water hydrogen production electronic device, electrode system and preparation method thereof

Publications (2)

Publication Number Publication Date
CN109502545A CN109502545A (en) 2019-03-22
CN109502545B true CN109502545B (en) 2020-08-11

Family

ID=65746489

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811179844.1A Active CN109502545B (en) 2018-10-10 2018-10-10 Germanium selenide based sunlight decomposition water hydrogen production electronic device, electrode system and preparation method thereof

Country Status (1)

Country Link
CN (1) CN109502545B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113181936B (en) * 2021-04-28 2022-03-04 东南大学 Heterojunction GeSe/TiO2Composite photocatalyst and preparation method thereof
CN114188428B (en) * 2021-12-13 2023-07-25 湘潭大学 Photoelectric device of germanium selenide composite material and preparation method thereof
CN115011921B (en) * 2022-05-25 2023-07-25 华南师范大学 Germanium selenide film with micro hollow brick structure, solar power generation and hydrolysis hydrogen production device and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080689A (en) * 2008-09-26 2010-04-08 Sony Corp Semiconductor thin film forming method, and electronic device manufacturing method
CN101771105A (en) * 2009-12-01 2010-07-07 郭玉钦 Method for preparing CIGS thin film solar cell in continuous production line
CN102176478A (en) * 2011-03-23 2011-09-07 泉州市博泰半导体科技有限公司 Large-area flexible thin film solar cell
CN106783541A (en) * 2016-12-20 2017-05-31 中国科学院化学研究所 A kind of selenizing germanous polycrystal film and the solar cell containing the film and preparation method thereof
CN107740150A (en) * 2017-08-25 2018-02-27 洛阳师范学院 A kind of germanium-selenide film and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080689A (en) * 2008-09-26 2010-04-08 Sony Corp Semiconductor thin film forming method, and electronic device manufacturing method
CN101771105A (en) * 2009-12-01 2010-07-07 郭玉钦 Method for preparing CIGS thin film solar cell in continuous production line
CN102176478A (en) * 2011-03-23 2011-09-07 泉州市博泰半导体科技有限公司 Large-area flexible thin film solar cell
CN106783541A (en) * 2016-12-20 2017-05-31 中国科学院化学研究所 A kind of selenizing germanous polycrystal film and the solar cell containing the film and preparation method thereof
CN107740150A (en) * 2017-08-25 2018-02-27 洛阳师范学院 A kind of germanium-selenide film and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Pt/In2S3/CdS/Cu2ZnSnS4 Thin Film as an Efficient and Stable Photocathode for Water Reduction under Sunlight Radiation";Feng Jiang等;《Journal of the American Chemical Society》;20151231;第13691-13697页 *

Also Published As

Publication number Publication date
CN109502545A (en) 2019-03-22

Similar Documents

Publication Publication Date Title
Yang et al. Benchmark performance of low-cost Sb2Se3 photocathodes for unassisted solar overall water splitting
CN102569508B (en) Thin-film solar photovoltaic cell with nano wire array structure and preparation method for thin-film solar photovoltaic cell
CN109502545B (en) Germanium selenide based sunlight decomposition water hydrogen production electronic device, electrode system and preparation method thereof
Wang et al. Synthesis and performance of Cu2ZnSnS4 semiconductor as photocathode for solar water splitting
WO2022206038A1 (en) Copper-zinc-tin-sulfur-selenium semi-transparent solar cell device and preparation method therefor
Todorov et al. CuInS2 films for photovoltaic applications deposited by a low-cost method
TWI684288B (en) Solar cell including multiple buffer layer formed by atomic layer deposition and method of fabricating the same
CN102392282B (en) Method for electrochemical preparation of cadmium telluride semiconductor film under alkaline water phase condition
CN105932114A (en) Method for preparing solar cell absorbing layer film based on water bath and post-selenization
Yussuf et al. Photovoltaic efficiencies of microwave and Cu2ZnSnS4 (CZTS) superstrate solar cells
JP2015508239A (en) Compound semiconductor solar cell
KR20240032777A (en) Method of manufacturing metal oxide electrode, photocathode, and photo-electrochemical cell
Chander et al. Nontoxic and earth-abundant Cu2ZnSnS4 (CZTS) thin film solar cells: A review on high throughput processed methods
Peng et al. Controllable (hk 1) preferred orientation of Sb2S3 thin films fabricated by pulse electrodeposition
CN114262911B (en) Full-space gradient doped photoelectrode for photolysis of water and preparation method
Rajeshmon et al. Prospects of sprayed CZTS thin film solar cells from the perspective of material characterization and device performance
JP2003258278A (en) Photoelectric conversion device and manufacturing method thereof
Lv et al. NI co-doped TiO2 compact film as a highly effective n-type electron blocking layer for solar cells
KR20120081899A (en) Method of manufacturing thin film solar cell using alkali hydride
Heidari et al. Effect of sintering optimization on the photoelectrochemical performance of Cu2ZnSnS4 nanocrystal films
CN113718288A (en) Novel CuCoOxLoaded Mo-BiVO4Preparation method and application of composite photo-anode
CN114188442A (en) Preparation method of antimony-doped electrochemical deposition copper-zinc-tin-sulfur solar cell absorption layer
Morris et al. Chemical bath deposition of thin film CdSe layers for use in Se alloyed CdTe solar cells
CN115637430A (en) High-performance chalcogenide compound-based photocathode and preparation method thereof
RU204768U1 (en) Multilayer solar cell based on metal oxides Cu2O, ZnO

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant