CN109494206B - Thyristor - Google Patents
Thyristor Download PDFInfo
- Publication number
- CN109494206B CN109494206B CN201710816587.7A CN201710816587A CN109494206B CN 109494206 B CN109494206 B CN 109494206B CN 201710816587 A CN201710816587 A CN 201710816587A CN 109494206 B CN109494206 B CN 109494206B
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- Prior art keywords
- lead
- molybdenum sheet
- thyristor
- hole
- preset path
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 54
- 238000000605 extraction Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 238000012858 packaging process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000001960 triggered effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Abstract
The invention discloses a thyristor, which comprises a tube cover, an upper molybdenum sheet, a chip, a lower molybdenum sheet and a tube seat which are sequentially arranged from top to bottom, wherein a preset path for leading out a gate line is arranged on one side of the tube cover, which is in contact with the upper molybdenum sheet, the preset path comprises a first leading-out hole with a long preset section, and the other sections of the preset path are provided with second leading-out holes or leading-out grooves. By applying the thyristor disclosed by the invention, the gate line is led out by arranging the first lead-out hole on the tube cover, so that the gate line is prevented from being pulled by the rotation of the upper molybdenum sheet to influence the conduction of the gate electrode of the thyristor, the difficulty in assembling the gate electrode is reduced in the packaging process, the direct contact between the upper molybdenum sheet and the chip is ensured, and the heat dissipation of the device is ensured.
Description
Technical Field
The invention relates to the technical field of electronic components, in particular to a thyristor.
Background
The traditional thyristor has three electrodes, and the cathode and the anode are respectively led out through an upper molybdenum sheet, a lower molybdenum sheet, a tube cover copper platform and a tube seat copper platform. Since the gate region of the thyristor chip is usually in the middle of the cathode surface of the chip, the gate is usually led out of the package through the gate line. There are two commonly used methods of gate line extraction for thyristors.
The first is that the gate line is led out by slotting the molybdenum sheet on the thyristor.
The method has the obvious defects that the molybdenum sheet and the chip are circular, the upper molybdenum sheet can rotate relative to the chip when the element is transported or shaken, the gate line is led out from the groove on the surface of the upper molybdenum sheet, so that the gate lead can be pulled due to the rotation of the upper molybdenum sheet, and the gate line can be torn or scratched, so that the gate of the element cannot be triggered and fails.
And the second is that the gate line is led out by slotting the thyristor cover.
The method can avoid the risk that the gate pole lead wire is torn or torn due to the rotation of the upper molybdenum sheet in the first method, but has other obvious disadvantages. In the assembling process of the thyristor, the tube seat, the lower molybdenum sheet, the chip, the upper molybdenum sheet and the tube cover are sequentially stacked and assembled from bottom to top. The tube cap was assembled last, the gate pole piece was placed on the molybdenum sheet, and then the tube cap was covered by eye while ensuring that the gate pole line was in the groove opened in the tube cap. The gate electrode line is likely to deviate out of the groove when the tube cover is covered, and the gate electrode line is extruded by the tube cover copper platform and the upper molybdenum sheet, so that the risk of short circuit of the gate cathode is likely to be caused for a long time, and the thyristor is not triggered to fail.
In the first method, a molybdenum sheet on a thyristor is grooved to lead out a gate pole lead-out wire. Because the molybdenum sheet and the chip are both circular, the upper molybdenum sheet may rotate relative to the chip when the element is transported or shaken, and because the gate lead is led out from the groove on the surface of the upper molybdenum sheet, the gate lead is pulled due to the rotation of the upper molybdenum sheet, and the gate lead is torn, so that the gate of the element fails without being triggered.
And the second is that the gate line is led out by slotting the thyristor cover. In the assembling process of the thyristor, the tube seat, the lower molybdenum sheet, the chip, the upper molybdenum sheet and the tube cover are sequentially stacked and assembled from bottom to top. The tube cap was assembled last, the gate pole piece was placed on the molybdenum sheet, and then the tube cap was covered by eye while ensuring that the gate pole line was in the groove opened in the tube cap. The gate electrode line is likely to deviate out of the groove when the tube cover is covered, and the gate electrode line is extruded by the tube cover copper platform and the upper molybdenum sheet, so that the risk of short circuit of the gate cathode is likely to be caused for a long time, and the thyristor is not triggered to fail.
In summary, how to effectively solve the problems that the gate line cannot be led out smoothly and the like is a problem that needs to be solved urgently by those skilled in the art at present.
Disclosure of Invention
Accordingly, the present invention is directed to a thyristor, which can solve the problem that gate lines cannot be led out smoothly.
In order to achieve the purpose, the invention provides the following technical scheme:
the thyristor comprises a tube cover, an upper molybdenum sheet, a chip, a lower molybdenum sheet and a tube seat which are sequentially arranged from top to bottom, wherein a preset path for leading out a gate line is arranged on one side, which is in contact with the upper molybdenum sheet, of the tube cover, the preset path comprises a first leading-out hole with a preset length, and other sections of the preset path are provided with second leading-out holes or leading-out grooves.
Preferably, the preset path is a straight radius of the pipe cover from the circumferential edge to the circle center.
Preferably, the other sections of the preset path are provided with the lead-out grooves, the first lead-out holes are arranged from outside to inside along the circumferential edge of the pipe cover, and the lead-out grooves are arranged from inside to outside along the circle center of the pipe cover.
Preferably, the length of the first exit aperture is between 1/2 and 2/3 of the radius of the tube cap.
Preferably, the length of the first exit hole is 1/2 times the radius of the tube cover.
Preferably, the first lead-out hole is formed in the center of the preset path, and the other sections of the preset path are provided with the lead-out grooves.
Preferably, the diameter of the second lead-out hole is greater than or equal to the diameter of the first lead-out hole.
Preferably, the diameter of the second exit hole is equal to the diameter of the second exit hole.
Preferably, the diameter of the first exit hole is 2-3 times the diameter of the gate line.
The thyristor provided by the invention comprises a tube cover, an upper molybdenum sheet, a chip, a lower molybdenum sheet and a tube seat which are sequentially arranged from top to bottom, and is characterized in that a preset path for leading out a gate line is arranged on one side of the tube cover, which is in contact with the upper molybdenum sheet, the preset path comprises a first leading-out hole with a long preset section, and the other sections of the preset path are provided with second leading-out holes or leading-out grooves. By applying the thyristor provided by the invention, the gate line is led out by arranging the first lead-out hole on the tube cover, so that the gate line is prevented from being pulled by the rotation of the upper molybdenum sheet to influence the conduction of the gate electrode of the thyristor, the difficulty in assembling the gate electrode is reduced in the packaging process, the direct contact between the upper molybdenum sheet and the chip is ensured, and the heat dissipation of the device is ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a thyristor according to an embodiment of the present invention.
The drawings are numbered as follows:
the device comprises a first lead-out hole 1, a lead-out groove 2, a tube cover 3, an upper molybdenum sheet 4, a chip 5, a tube seat 6 and a lower molybdenum sheet 7.
Detailed Description
The embodiment of the invention discloses a thyristor, which aims to solve the problems that a gate line cannot be led out smoothly and the like.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a thyristor according to an embodiment of the present invention.
In a specific embodiment, the thyristor provided by the invention comprises a tube cover 3, an upper molybdenum sheet 4, a chip 5, a lower molybdenum sheet 7 and a tube seat 6 which are sequentially arranged from top to bottom, wherein a preset path for leading out a gate line is arranged on one side of the tube cover 3, which is in contact with the upper molybdenum sheet 4, the preset path comprises a first leading-out hole 1 with a preset length, and the other sections of the preset path are provided with second leading-out holes or leading-out grooves 2.
In the assembly process of the thyristor, generally, a tube seat 6, a lower molybdenum sheet 7, a chip 5, an upper molybdenum sheet 4 and a tube cover 3 are sequentially stacked and assembled from bottom to top, a preset path is arranged on one side of the tube cover 3, which is in contact with the upper molybdenum sheet 4, generally, the preset path is the shortest distance, certainly, the path can be set according to needs in actual setting, the preset path comprises a first lead-out hole 1, the length of the first lead-out hole 1 can be automatically set, for example, according to the primary maximum length of an electric drill, or the maximum distance capable of ensuring the straightness of the first lead-out hole 1, in the actual setting process, the lead-out of a gate line can be realized only through the first lead-out hole 1, and the diameter of a second lead-out hole can be equal to the diameter of the first lead-out hole 1. Certainly, in order to facilitate the processing of drawing forth the hole, the drawing forth of door polar line is realized to the accessible setting up the second and draws forth the hole, and the diameter that the hole was drawn forth to the second can be greater than the first diameter of drawing forth hole 1 to reduce the electric drill degree of difficulty. Correspondingly, the accessible sets up and draws forth groove 2 in order to reduce the processing degree of difficulty, and when first draw forth hole 1 and advance line location to the door polar line, draws forth through drawing forth groove 2, and it can not deviate from the groove outside, and reduces the installation degree of difficulty.
In one embodiment, the position of the gate line is pre-fixed through the first lead-out hole 1, the risk that the gate line is torn off due to the rotation of the upper molybdenum sheet 4 is avoided, meanwhile, the gate line is prevented from deviating through the second lead-out hole or the lead-out groove 2, the risk that the gate line is extruded by the tube cover 3 and the upper molybdenum sheet 4 is reduced, and the close connection between the tube cover 3 and the upper molybdenum sheet 4 is ensured due to the fact that the length of the groove is small, so that the thermal resistance of a device is reduced, and the heat dissipation of a thyristor is facilitated. During assembly, the gate lead wires penetrate out from inside to outside, then the gate piece part is positioned in the central positioning hole of the tube cover 3, then the tube cover 3 is covered, and then cold-press welding is carried out.
By applying the thyristor provided by the invention, the gate line is led out by arranging the first lead-out hole 1 on the tube cover 3, so that the gate line is prevented from being pulled by the rotation of the upper molybdenum sheet 4 to influence the conduction of the gate electrode of the thyristor, the difficulty in assembling the gate electrode is reduced in the packaging process, the direct contact between the upper molybdenum sheet 4 and the chip 5 is ensured, and the heat dissipation of the device is ensured.
Specifically, the preset path is a straight radius of the tube cover 3 from the circumferential edge to the center of the circle. The preset path is the radius direction of the tube cover 3, the straight line between the two points is the shortest, the processing difficulty of the first lead-out hole 1, the second lead-out hole or the lead-out groove 2 on the tube cover 3 is reduced, the tight connection between the tube cover 3 and the upper molybdenum sheet 4 is ensured, and the heat dissipation of the device is ensured.
Further, other sections of the preset path are provided with a leading-out groove 2, the first leading-out hole 1 is arranged from outside to inside along the circumferential edge of the pipe cover 3, and the leading-out groove 2 is arranged from inside to outside along the circle center of the pipe cover 3. The preset path is composed of a first lead-out hole 1 and a lead-out groove 2, preferably, the first lead-out hole 1 is arranged on the outer side of the tube cover 3 in the radial direction for processing, and the lead-out groove 2 is arranged on the inner side of the radial direction.
Furthermore, a hole is punched from the circumferential edge of the tube cover 3 to the center direction, the length of the first lead-out hole 1 is between 1/2 and 2/3 of the radius of the tube cover 3, and correspondingly, the length of the lead-out groove 2 is between 1/3 and 1/2 of the radius of the tube cover 3. The length of the first lead-out hole 1 is only preferred here, and in other embodiments, the length thereof can be set by itself, and all of them are within the protection scope of the present invention. Preferably, the length of the first lead-out hole 1 is 1/2 of the radius of the tube cover 3.
In one embodiment, the first lead-out hole 1 is arranged at the center of the preset path, and the lead-out grooves 2 are arranged at other sections of the preset path, preferably, the first lead-out hole 1 is arranged at the trisection point of the preset path, the lead-out grooves 2 are arranged at the two ends of the preset path, and the positioning effect is improved by positioning the gate line at the center.
Specifically, the diameter of the second lead-out hole is larger than or equal to the diameter of the first lead-out hole 1. In order to reduce the processing difficulty, the diameter of the second lead-out hole is larger than that of the first lead-out hole 1, in this embodiment, the first lead-out hole 1 is arranged on the inner side of the tube cover 3, and the second lead-out hole is arranged on the outer side of the tube cover 3. In the case where the machining accuracy can be ensured, the first lead-out hole 1 and the second lead-out hole may be set to have the same diameter, that is, the gate line may be led out by providing one hole.
On the basis of the above embodiments, the diameter of the first lead-out hole 1 is 2-3 times the diameter of the gate line. When the gate line can be ensured to smoothly pass through the first lead-out hole 1, the structural improvement of the tube cover 3 is reduced, the tube cover 3 is ensured to be tightly connected with the upper molybdenum sheet 4, the thermal resistance of a device is reduced, and the heat dissipation is ensured.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A thyristor comprises a tube cover, an upper molybdenum sheet, a chip, a lower molybdenum sheet and a tube seat which are sequentially arranged from top to bottom, and is characterized in that one side of the tube cover, which is in contact with the upper molybdenum sheet, is provided with a preset path for leading out a gate line, the preset path comprises a first lead-out hole with a preset section length, and other sections of the preset path are provided with second lead-out holes or lead-out grooves;
the preset path is a straight line radius from the circumferential edge to the circle center of the pipe cover;
the first lead-out hole is formed in the inner side of the tube cover, and the second lead-out hole is formed in the outer side of the tube cover;
the diameter of the second leading-out hole is larger than that of the first leading-out hole, so that the processing difficulty is reduced;
the position of the gate electrode wire is pre-fixed through the first lead-out hole, the risk that the gate electrode wire is pulled apart due to the rotation of the upper molybdenum sheet is avoided, meanwhile, the gate electrode wire is prevented from deviating through the second lead-out hole or the lead-out groove, and the risk that the gate electrode wire is extruded by the pipe cover and the upper molybdenum sheet is reduced.
2. The thyristor according to claim 1, wherein the other sections of the preset path are provided with the lead-out grooves, the first lead-out holes are arranged from outside to inside along a circumferential edge of the tube cap, and the lead-out grooves are arranged from inside to outside along a circle center of the tube cap.
3. The thyristor of claim 2, wherein the length of the first extraction hole is between 1/2 and 2/3 of the radius of the cap.
4. The thyristor of claim 3, wherein the length of the first lead-out hole is 1/2 of the radius of the cap.
5. The thyristor according to claim 1, wherein the first lead-out hole is arranged at the center of the preset path, and the other sections of the preset path are provided with the lead-out grooves.
6. The thyristor of claim 1, wherein a diameter of the second tap hole is equal to a diameter of the first tap hole.
7. A thyristor according to any one of claims 1 to 6, wherein the diameter of the first lead-out hole is 2 to 3 times the diameter of the gate line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710816587.7A CN109494206B (en) | 2017-09-12 | 2017-09-12 | Thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710816587.7A CN109494206B (en) | 2017-09-12 | 2017-09-12 | Thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109494206A CN109494206A (en) | 2019-03-19 |
| CN109494206B true CN109494206B (en) | 2022-05-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710816587.7A Active CN109494206B (en) | 2017-09-12 | 2017-09-12 | Thyristor |
Country Status (1)
| Country | Link |
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| CN (1) | CN109494206B (en) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831488B2 (en) * | 1987-12-03 | 1996-03-27 | 三菱電機株式会社 | Semiconductor device |
| JP3469304B2 (en) * | 1994-04-12 | 2003-11-25 | 三菱電機株式会社 | Semiconductor device |
| JPH08330337A (en) * | 1995-05-30 | 1996-12-13 | Hitachi Ltd | Flat type semiconductor device |
| JP3375812B2 (en) * | 1996-02-21 | 2003-02-10 | 三菱電機株式会社 | Pressure contact type semiconductor device and semiconductor element |
| CN201022078Y (en) * | 2006-10-19 | 2008-02-13 | 株洲南车时代电气股份有限公司 | A center positioning power part |
| CN200979885Y (en) * | 2006-10-19 | 2007-11-21 | 株洲南车时代电气股份有限公司 | A power device with anti-explosion device |
| CN201689155U (en) * | 2010-05-24 | 2010-12-29 | 株洲南车时代电气股份有限公司 | Adaptor used for testing chip of thyristor |
| CN103531622A (en) * | 2012-07-06 | 2014-01-22 | 湖北台基半导体股份有限公司 | High-voltage fast thyristor |
| CN102768999B (en) * | 2012-07-28 | 2014-12-03 | 江阴市赛英电子有限公司 | High-power integral wafer IGBT (insulated gate bipolar transistor) packaging structure |
| CN203871338U (en) * | 2014-05-20 | 2014-10-08 | 湖北台基半导体股份有限公司 | Ultra high speed pulse thyristor |
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2017
- 2017-09-12 CN CN201710816587.7A patent/CN109494206B/en active Active
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Effective date of registration: 20200907 Address after: Room 309, semiconductor third line office building, Tianxin high tech park, Shifeng District, Zhuzhou City, Hunan Province Applicant after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Applicant before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |
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