CN109490392A - A kind of field effect transistor biosensor and preparation method thereof - Google Patents
A kind of field effect transistor biosensor and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to biosensor technology fields, and in particular to a kind of field effect transistor biosensor and preparation method thereof.Field effect transistor biosensor provided by the invention includes the source electrode that shape is needle-like, the first insulating layer that the source electrode surface is arranged in, the drain electrode of first surface of insulating layer is arranged in and the second insulating layer of the drain surface is arranged in；Wherein, the tip portion of the field effect transistor biosensor be include source electrode, the first insulating layer, drain electrode and second insulating layer section, the source electrode and drain electrode of the tip portion is connected by channel articulamentum.The shape of field effect transistor biosensor provided by the invention is needle-like, can be inserted directly into the real-time monitoring that living body carries out biogenic signaling molecule.It is easy to operate the present invention provides the preparation method of the field effect transistor biosensor, it can prepare in batches.
Description
Technical field
The present invention relates to biosensor technology fields, and in particular to a kind of field effect transistor biosensor and its system
Preparation Method.
Background technique
Field effect transistor (Field Effect Transistor, FET) biosensor is most potential in recent years
One of biosensor, it has the characteristics that, and high sensitivity, analysis speed be fast, reagent consumption less, it is easy to operate, label-free, especially
It is that it is highly miniaturized and the integrated extensive concern for causing life science.And current FET biosensor is big
It is all to be prepared by the semiconductor photolithography of standard, so being essentially all plate silicon based array electrode form.
This plate FET biosensor is only used for external fluid sample detection or the detection of cellular level, it is difficult to use
It is detected in living body biological.
Current living body real-time monitoring is the research hotspot and difficult point in international front line science field, and hair orchid group seminar takes the lead in
The country carries out viviperception, establishes and developed the new principle, new method and new technology of in-vivo analysis chemistry, and obtain a series of
Important research achievement.They focus primarily upon intracerebral object Quality Research, have developed Microdialysis Technique for On-line testing intracerebral
The real-time monitoring of substance, the carbon fiber electrode that different function has also been developed are used for the real-time tracking of living body signaling molecule, these grind
Excellent basis has been established in the development studied carefully for domestic living body in situ study.But carbon fiber electrode belongs to electrochemical sensor, is
Method based on electrochemistry is detected for having electroactive substance, and lacks specificity.So living body is real-time at present
Research still has some difficult and challenge.
Summary of the invention
The purpose of the present invention is to provide a kind of field effect transistor biosensor and preparation method thereof, the present invention is provided
Field effect transistor biosensor shape be needle-like, can be realized living body real-time monitoring.
In order to achieve the above-mentioned object of the invention, the present invention the following technical schemes are provided:
The present invention provides a kind of field effect transistor biosensor, including shape for needle-like source electrode, be arranged in institute
First insulating layer on source electrode surface is stated, the drain electrode of first surface of insulating layer is set and is arranged in the of the drain surface
Two insulating layers；Wherein, the tip portion of the field effect transistor biosensor be include source electrode, the first insulating layer, drain electrode
It is connected with the source electrode and drain electrode in the section of second insulating layer, the tip portion by channel articulamentum.
Preferably, the material of the source electrode includes stainless steel, gold, platinum or copper.
Preferably, the diameter of the source electrode is 0.15~0.5mm.
Preferably, the material of the drain electrode includes gold, platinum or copper.
Preferably, the drain electrode with a thickness of 3~5 μm.
Preferably, formed first insulating layer and second insulating layer insulating materials independently include Parylene,
Electrophoretic paint or epoxy resin.
Preferably, first insulating layer and the thickness of second insulating layer independently are 4~10 μm.
Preferably, the channel connecting material for forming the channel articulamentum includes semiconductor material.
Preferably, the semiconductor material includes carbon nanotube, graphene, molybdenum disulfide or silicon nanowires.
The present invention provides the preparation method of field effect transistor biosensor described in above-mentioned technical proposal, including it is following
Step:
It is sequentially depositing the first insulating layer, drain electrode and second insulating layer on the surface for the source electrode that shape is needle-like, obtains needle-like
Device；
It polishes the tip portion of the needle-like device, obtains including that source electrode, the first insulating layer, drain electrode and second are exhausted
The section of edge layer；
Channel articulamentum is set between the source electrode and drain electrode in the section, obtains field effect transistor biosensor.
The present invention provides a kind of field effect transistor biosensor, including shape for needle-like source electrode, be arranged in institute
First insulating layer on source electrode surface is stated, the drain electrode of first surface of insulating layer is set and is arranged in the of the drain surface
Two insulating layers；Wherein, the tip portion of the field effect transistor biosensor be include source electrode, the first insulating layer, drain electrode
It is connected with the source electrode and drain electrode in the section of second insulating layer, the tip portion by channel articulamentum.Field provided by the invention
The shape of effect transistor biosensor is needle-like, can be inserted directly into the real-time monitoring that living body carries out biogenic signaling molecule.
It is easy to operate the present invention provides the preparation method of the field effect transistor biosensor, it can make in batches
It is standby.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of field effect transistor biosensor provided by the invention, and 1 is drain electrode, and 2 be insulation
Layer, 2-1 are the first insulating layer, and 2-2 is second insulating layer, and 3 be source electrode, and 4 be channel articulamentum；
Fig. 2 is the transfer characteristic curve figure of carbon nanotube field-effect transistor biosensor prepared by embodiment 1；
Fig. 3 is the output characteristic curve figure of carbon nanotube field-effect transistor biosensor prepared by embodiment 1；
Fig. 4 is the transfer characteristic curve figure of graphene field effect transistor biosensor prepared by embodiment 2；
Fig. 5 is the output characteristic curve figure of graphene field effect transistor biosensor prepared by embodiment 2.
Specific embodiment
The present invention provides a kind of field effect transistor biosensor, including shape for needle-like source electrode, be arranged in institute
First insulating layer on source electrode surface is stated, the drain electrode of first surface of insulating layer is set and is arranged in the of the drain surface
Two insulating layers；Wherein, the tip portion of the field effect transistor biosensor be include source electrode, the first insulating layer, drain electrode
It is connected with the source electrode and drain electrode in the section of second insulating layer, the tip portion by channel articulamentum.
In the present invention, the material of the source electrode preferably includes stainless steel, gold, platinum or copper, more preferably stainless steel.This hair
The bright specific type for the stainless steel does not have special restriction, can satisfy practical safe handling requirement.In this hair
In bright, the diameter of the source electrode is preferably 0.15~0.5mm, more preferably 0.2~0.4mm.In an embodiment of the present invention, have
Body is using stainless pin acupuncture needle as source electrode；The present invention is using stainless pin acupuncture needle as source electrode, and rigidity is good and size is suitable,
It is small to be inserted into living injury, while buying conveniently, it is cheap, it is suitable for large-scale production.
The present invention does not have the material of the drain electrode special restriction, is using material well known to those skilled in the art
Can, in the present invention, the material of the drain electrode preferably includes gold, platinum or copper, more preferably golden.In the present invention, the drain electrode
Thickness be preferably 3~5 μm, more preferably 3~4 μm.
The present invention does not have special restriction for the insulating materials for forming first insulating layer and second insulating layer, uses
Insulating materials well known to those skilled in the art.In the present invention, first insulating layer and second insulating layer are formed
Insulating materials preferably independently includes Parylene, electrophoretic paint or epoxy resin, more preferably Parylene.In the present invention
In, the thickness of first insulating layer and second insulating layer is independently preferably 4~10 μm, more preferably 6~8 μm.
The present invention is for the thickness of the channel articulamentum, size and the channel company for forming the channel articulamentum
Connecing material does not have special restriction, can be realized source electrode and drain electrode conducting.In the present invention, the channel connecting material is excellent
Choosing includes semiconductor material, more preferably includes carbon nanotube, graphene, molybdenum disulfide or silicon nanowires.The present invention is for described
Specific kind of semiconductor material does not have special restriction, using commercial goods well known to those skilled in the art.
Fig. 1 is the structural schematic diagram of field effect transistor biosensor provided by the invention, and 1 is drain electrode, and 2 be insulation
Layer, 2-1 are the first insulating layer, and 2-2 is second insulating layer, and 3 be source electrode, and 4 be channel articulamentum；Field effect transistor biology in figure
The tip portion of sensor is tip enlarged drawing by the figure that dotted line is drawn, i.e., absolutely including source electrode, the first insulating layer, drain electrode, second
The structural schematic diagram in the section of edge layer and channel articulamentum is followed successively by drain electrode, the first insulating layer, source electrode and second absolutely from inside to outside
Edge layer, the source electrode and drain electrode are connected by channel articulamentum.The positional relationship of each layer is more clearly embodied in Fig. 1, therefore
Set ladder-like for the length of the drain electrode, the first insulating layer, second insulating layer and source electrode.
The present invention provides the preparation method of field effect transistor biosensor described in above-mentioned technical proposal, including it is following
Step:
It is sequentially depositing the first insulating layer, drain electrode and second insulating layer on the surface for the source electrode that shape is needle-like, obtains needle-like
Device；
It polishes the tip portion of the needle-like device, obtains including that source electrode, the first insulating layer, drain electrode and second are exhausted
The section of edge layer；
Channel articulamentum is set between the source electrode and drain electrode in the section, obtains field effect transistor biosensor.
The present invention is sequentially depositing the first insulating layer, drain electrode and second insulating layer on the surface for the source electrode that shape is needle-like, obtains
To needle-like device.The present invention is for depositing the specific method and operating parameter of first insulating layer, drain electrode and second insulating layer
There is no special restriction, using deposition method well known to those skilled in the art, the first insulating layer that required thickness can be obtained,
Drain electrode and second insulating layer；Present invention preferably employs the first insulating layers described in chemical vapor deposition and second absolutely
Edge layer deposits the drain electrode using galvanoplastic.
After obtaining needle-like device, the present invention polishes to the tip portion of the needle-like device, obtains including source electrode,
One insulating layer, drain electrode and second insulating layer section.The present invention restriction not special for the polishing, can guarantee to obtain
Smooth section.The present invention does not have the size in the section special restriction, can guarantee to expose the source electrode and
Drain electrode includes source electrode, the first insulating layer, drain electrode and second insulating layer that is, on guarantee section.
Obtain include source electrode, the first insulating layer, drain electrode and second insulating layer section after, source of the present invention in the section
Channel articulamentum is set between pole and drain electrode, obtains field effect transistor biosensor.The present invention connects the channel
The setting method of layer does not have special restriction, can be realized source electrode and drain electrode conducting.In the present invention, the channel connection
Layer setting method preferably include following steps: disperse channel connecting material in dimethyl sulfoxide, obtain concentration be 0.5~
The channel connecting material dispersion liquid of 2mg/mL；By the channel connecting material dispersion between the source electrode and drain electrode,
Then solidify 0.5~2h under the conditions of 75~85 DEG C.The present invention does not have the coated weight of the channel connecting material dispersion liquid
Special restriction can guarantee that source electrode and drain electrode is connected the channel articulamentum formed after solidifying.
The shape of field effect transistor biosensor provided by the invention is needle-like, can be inserted directly into living body and carry out biology
The real-time monitoring of signaling molecule, specifically, after preparing field effect transistor biosensor according to above scheme, it can be in ditch
Corresponding antigen or antibody are modified in road connecting material, are then inserted directly into the field effect transistor biosensor after modification
Living body carries out the real-time monitoring of target molecule.Insertion of the present invention for the field effect transistor biosensor after modification
Mode or position do not have special restriction, select according to actual needs；Specifically, if it is the object point of detection brain
Son, that just needs to be positioned with stereotaxic apparatus, and the field effect transistor biosensor after modification is inserted into after electric drill drilling；
If it is the target molecule in detection musculature, the field effect transistor biosensor after modification is directly inserted into muscle
Tissue.In an embodiment of the present invention, specifically, preparing field effect transistor biosensor according to above scheme
Afterwards, glutamate receptor can be modified in channel connecting material, is then positioned with stereotaxic apparatus, be inserted into after electric drill drilling
Field effect transistor biosensor after modification, real-time monitoring cerebral hippocampus tissue discharge paddy neurotransmitter glutamate.
Below in conjunction with the embodiment in the present invention, the technical solution in the present invention is clearly and completely described.It is aobvious
So, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the reality in the present invention
Example is applied, every other embodiment obtained by those of ordinary skill in the art without making creative efforts all belongs to
In the scope of protection of the invention.
Embodiment 1
Using stainless pin acupuncture needle (diameter 0.2mm) as source electrode, using chemical vapour deposition technique the source electrode table
Face coated with parylene is as the first insulating layer, with a thickness of 8 μm；Using galvanoplastic first insulating layer surface gold-plating
As drain electrode, with a thickness of 5 μm；It is exhausted as second in the surface coated with parylene of the drain electrode using chemical vapour deposition technique
Edge layer obtains needle-like device with a thickness of 8 μm；
The tip portion of the needle-like device is polished, obtains including that source electrode, the first insulating layer, drain electrode and second are exhausted
The section of edge layer；
It is scattered in dimethyl sulfoxide using carbon nanotube as channel connecting material, obtains the carbon nanometer that concentration is 1mg/mL
Pipe dispersion liquid；
The carbon nano tube dispersion liquid is coated between the source electrode and drain electrode on the section, then under the conditions of 80 DEG C
Solidify 30min, obtains carbon nanotube field-effect transistor biosensor.
Embodiment 2
Using stainless pin acupuncture needle (diameter 0.4mm) as source electrode, using chemical vapour deposition technique the source electrode table
Face coated with parylene is as the first insulating layer, with a thickness of 6 μm；Using galvanoplastic first insulating layer surface gold-plating
As drain electrode, with a thickness of 3 μm；It is exhausted as second in the surface coated with parylene of the drain electrode using chemical vapour deposition technique
Edge layer obtains needle-like device with a thickness of 6 μm；
The tip portion of the needle-like device is polished, obtains including that source electrode, the first insulating layer, drain electrode and second are exhausted
The section of edge layer；
It is scattered in dimethyl sulfoxide using graphene as channel connecting material, obtains the graphene point that concentration is 1mg/mL
Dispersion liquid；
The graphene dispersing solution is coated between the source electrode and drain electrode on the section, it is then solid under the conditions of 80 DEG C
Change 2h, obtains graphene field effect transistor biosensor.
Carbon nanotube field-effect transistor biosensor and graphene field effect prepared by embodiment 1 and embodiment 2
Transistor biosensor carries out electric performance test, specific as follows:
Fig. 2 is the transfer characteristic curve figure of carbon nanotube field-effect transistor biosensor prepared by embodiment 1, Fig. 3
For the output characteristic curve figure of carbon nanotube field-effect transistor biosensor prepared by embodiment 1.As shown in Figure 2, described
Carbon nanotube field-effect transistor biosensor has typical p-type doping feature, it was demonstrated that it, which has, can be used as sensor
The potential used；From the figure 3, it may be seen that leakage current illustrates that the carbon is received also with reduction as grid voltage increases from -0.6V to 0.2V
Mitron field effect transistor biosensor has n-type doping characteristic, and illustrates that it is very quick to the variation of grid voltage regulation electric current
Sense.Therefore, carbon nanotube field-effect transistor biosensor provided by the invention has good electric property, is that its is subsequent
It lays a good foundation applied to living body real-time monitoring.
Fig. 4 is the transfer characteristic curve figure of graphene field effect transistor biosensor prepared by embodiment 2, and Fig. 5 is
The output characteristic curve figure of graphene field effect transistor biosensor prepared by embodiment 2.As shown in Figure 4, the graphite
Alkene field effect transistor biosensor (- 0.4V arrives 0.8V) in small range grid voltage has apparent bipolarity feature；By Fig. 5
It is found that leakage current illustrates that the graphene field effect transistor is raw also with reduction as grid voltage reduces from 0.3V to -0.1V
Object sensor has p-type doping characteristic, and illustrates that it is very sensitive to the variation of grid voltage regulation electric current.Therefore, the present invention provides
Graphene field effect transistor biosensor have good electric property, be subsequently applied to living body real-time monitoring for it and establish
Basis is determined.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of field effect transistor biosensor, which is characterized in that including shape be needle-like source electrode, be arranged in the source
First insulating layer of pole surface, the drain electrode that first surface of insulating layer is set and the drain surface is set second absolutely
Edge layer；Wherein, the tip portion of the field effect transistor biosensor be include source electrode, the first insulating layer, drain electrode and the
The source electrode and drain electrode in the section of two insulating layers, the tip portion is connected by channel articulamentum.
2. field effect transistor biosensor according to claim 1, which is characterized in that the material of the source electrode includes
Stainless steel, gold, platinum or copper.
3. field effect transistor biosensor according to claim 1 or 2, which is characterized in that the diameter of the source electrode
For 0.15~0.5mm.
4. field effect transistor biosensor according to claim 1, which is characterized in that the material of the drain electrode includes
Gold, platinum or copper.
5. field effect transistor biosensor according to claim 1 or 4, which is characterized in that the thickness of the drain electrode
It is 3~5 μm.
6. field effect transistor biosensor according to claim 1, which is characterized in that form first insulating layer
Insulating materials with second insulating layer independently includes Parylene, electrophoretic paint or epoxy resin.
7. field effect transistor biosensor according to claim 1 or 6, which is characterized in that first insulating layer
4~10 μm independently are with the thickness of second insulating layer.
8. field effect transistor biosensor according to claim 1, which is characterized in that form the channel articulamentum
Channel connecting material include semiconductor material.
9. field effect transistor biosensor according to claim 8, which is characterized in that the semiconductor material includes
Carbon nanotube, graphene, molybdenum disulfide or silicon nanowires.
10. the preparation method of any one of the claim 1~9 field effect transistor biosensor, comprising the following steps:
It is sequentially depositing the first insulating layer, drain electrode and second insulating layer on the surface for the source electrode that shape is needle-like, obtains needle-like device；
It polishes the tip portion of the needle-like device, obtains including source electrode, the first insulating layer, drain electrode and second insulating layer
Section；
Channel articulamentum is set between the source electrode and drain electrode in the section, obtains field effect transistor biosensor.
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| CN112697843A (en) * | 2020-12-08 | 2021-04-23 | 湘潭大学 | Carbon-based field effect transistor sensor based on negative capacitance effect |
| CN114674897A (en) * | 2022-03-28 | 2022-06-28 | 深圳大学 | Probe type organic electrochemical transistor sensor for detecting pH value outside single cell, and preparation method and detection method thereof |
| RU2790004C1 (en) * | 2020-12-04 | 2023-02-14 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Nanoscale sensor of electric potential on field effect |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| RU2790004C1 (en) * | 2020-12-04 | 2023-02-14 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Nanoscale sensor of electric potential on field effect |
| CN112697843A (en) * | 2020-12-08 | 2021-04-23 | 湘潭大学 | Carbon-based field effect transistor sensor based on negative capacitance effect |
| CN112697843B (en) * | 2020-12-08 | 2023-10-03 | 湘潭大学 | Carbon-based field effect transistor sensor based on negative capacitance effect |
| CN114674897A (en) * | 2022-03-28 | 2022-06-28 | 深圳大学 | Probe type organic electrochemical transistor sensor for detecting pH value outside single cell, and preparation method and detection method thereof |
| CN114674897B (en) * | 2022-03-28 | 2023-06-06 | 深圳大学 | Probe-type organic electrochemical transistor sensor for detecting single-cell extracellular pH value, preparation method thereof and detection method thereof |
| RU223816U1 (en) * | 2023-12-08 | 2024-03-05 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Electric potential sensor based on low-dimensional structures with field effect |
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