CN109473551A - A kind of solar battery and preparation method thereof based on double source vapor deposition - Google Patents
A kind of solar battery and preparation method thereof based on double source vapor deposition Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The present invention discloses a kind of solar battery and preparation method thereof based on double source vapor deposition, and method is comprising steps of provide the substrate containing cathode；Electron transfer layer is formed on the substrate；Sb is formed on the electron transport layer2S3Film；The wherein Sb2S3The forming process of film: vacuum double source Co-evaporated Deposition technology is used, with Sb2S5And Sb2S3As persursor material, make Sb under vacuum conditions2S5And Sb2S3Concurrently vapour depositing forms Sb on the electron transport layer2S3Film；In the Sb2S3Hole transmission layer is formed on film；Anode is formed on the hole transport layer.The present invention uses vacuum double source Co-evaporated Deposition technology, with Sb2S5And Sb2S3As persursor material, double source coevaporation preparation Sb2S3Film.By being precisely controlled hydatogenesis parameter, high quality Sb is realized2S3The preparation of film is beneficial to the raising of solar battery efficiency.
Description
Technical field
The present invention relates to novel thin film solar cell photoelectric field of functional materials, more particularly to a kind of double source that is based on to be deposited
Solar battery and preparation method thereof.
Background technique
Sb2S3Film has high absorption coefficient in visible light region, close to the best band gap of solar cell application.In addition,
Sb2S3Thin-film solar cells still has good photovoltaic performance under the conditions of low light irradiation, can be in cloudy weather, interior
Efficient photoelectric conversion is realized in condition and building walls.Therefore, to Sb2S3The research of thin-film solar cells is for next
There is very high value for photovoltaic cell.To promote Sb2S3The development of thin-film solar cells, carried out device structure design and
The optimization of film quality.It is well known that absorbed layer plays an important role to the photovoltaic performance of device.Therefore, drawn in recent years
Many methods are entered to optimize Sb2S3The quality of film.One of which prepares Sb using water-soluble chemical bath deposition (CBD)2S3It is thin
Film, using the solution mixture of antimony chloride and sodium thiosulfate as Sb3+And S2-The low temperature precursor origin of ion.However, using
CBD method can hardly avoid the oxidation of antimony trisulfide, therefore the antimony oxide formed generates deep trap defect on the surface, leads to light
Excite the serious compound of charge carrier.Later period, which introduces, to be eliminated deep layer defect oxide after thioacetamide is handled and reaches
7.5% photoelectric conversion efficiency, but CBD method is still suffered from mesoporous TiO2It needs to form Sb for a long time on film2S3Ask
Topic.Some other method, including atomic layer deposition and precise thickness deposition are also applied to plane Sb2S3Solar battery, but these
Method preparation flow is complicated, does not meet existing industrialized requirement.For this purpose, conducive to extensive industrialization based on vacuum evaporation deposition
The preparation method of technology obtains extensive attention.One of which prepares Sb using vacuum list source thermal evaporation2S3Film, process
It is direct evaporation Sb2S3Precursor powder material, deposits Sb in substrate2S3The preparation method of film.However, direct Dan Yuanre
The Sb of evaporation2S3Film can undergo sulphur to lose in evaporation and post anneal, and ingredient is easy nonstoichiometry ratio and directly results in
Film quality and repeatability reduce, this will seriously damage film quality and device performance.
Therefore, the existing technology needs to be improved and developed.
Summary of the invention
In view of above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of solar-electricities based on double source vapor deposition
Pond and preparation method thereof, it is intended to solve the Sb of existing single source thermal evaporation2S3Film can undergo sulphur to damage in evaporation and post anneal
The problem of mistake, this will seriously damage film quality and device performance.
Technical scheme is as follows:
A kind of preparation method of the solar battery based on double source vapor deposition, wherein comprising steps of
Substrate containing cathode is provided；
Electron transfer layer is formed on the substrate；
Sb is formed on the electron transport layer2S3Film；The wherein Sb2S3The forming process of film: total using vacuum double source
Vapor deposition techniques, with Sb2S5And Sb2S3As persursor material, make Sb under vacuum conditions2S5And Sb2S3Concurrently vapour depositing
Sb is formed on the electron transport layer2S3Film；
In the Sb2S3Hole transmission layer is formed on film；
Anode is formed on the hole transport layer.
The preparation method of the solar battery based on double source vapor deposition, wherein the Sb2S3The forming process of film
It specifically includes: using vacuum double source Co-evaporated Deposition technology, with Sb2S5And Sb2S3As persursor material, by Sb2S5And Sb2S3
It is respectively put into two evaporation boats of coevaporation equipment, vacuum cavity is vacuumized, to the Sb2S5And Sb2S3Evaporation
Rate is controlled, and Sb is made2S5And Sb2S3Concurrently vapour depositing forms Sb on the electron transport layer2S3Film.
The preparation method of the solar battery based on double source vapor deposition, wherein 0.01:1 in mass ratio to 1:0.01,
By the Sb2S5And Sb2S3It is respectively put into two evaporation boats of coevaporation equipment.
The preparation method of the solar battery based on double source vapor deposition, wherein vacuum cavity is vacuumized, directly
To intracavitary vacuum degree 1.0 × 10-3Pa or less.
The preparation method of the solar battery based on double source vapor deposition, wherein formed on the electron transport layer
Sb2S3After film, in the Sb2S3It is formed before hole transmission layer, is further comprised the steps of: the Sb after taking-up on film2S3It is thin
Film is made annealing treatment.
The preparation method of the described solar battery based on double source vapor deposition, wherein the temperature of the annealing is
240-400℃。
The preparation method of the solar battery based on double source vapor deposition, wherein the time of the annealing is 2-
30 minutes.
A kind of solar battery based on double source vapor deposition, successively include from bottom to top substrate containing cathode, electron transfer layer,
Sb2S3Film, hole transmission layer and anode, wherein the solar battery is deposited too using of the present invention based on double source
The preparation method of positive energy battery is prepared.
The solar battery based on double source vapor deposition, wherein the Sb2S3Film with a thickness of 50-1000 nanometers.
The utility model has the advantages that the present invention provides a kind of method of easy to operate, repeatable preparation, this method uses vacuum double source
Co-evaporated Deposition technology uses Sb respectively2S5And Sb2S3As persursor material, double source coevaporation preparation Sb2S3Film.Pass through
It is precisely controlled Sb2S5And Sb2S3Hydatogenesis parameter, realize and complete high quality Sb under same vacuum environment in situ2S3Film
Preparation will be directly beneficial for based on Sb2S3The raising of the solar battery efficiency of film.
Detailed description of the invention
Fig. 1 is that vacuum double source coevaporation method prepares Sb in embodiment 1-32S3The schematic diagram of film.
Fig. 2 is the preparation of embodiment 1 based on Sb2S3The J-V curve graph of the solar battery of film.
Specific embodiment
The present invention provides a kind of solar battery and preparation method thereof based on double source vapor deposition, for make the purpose of the present invention,
Technical solution and effect are clearer, clear, and the present invention is described in more detail below.It should be appreciated that described herein
Specific embodiment is only used to explain the present invention, is not intended to limit the present invention.
The embodiment of the present invention provides a kind of preparation method of solar battery based on double source vapor deposition, wherein comprising steps of
Substrate containing cathode is provided；
Electron transfer layer is formed on the substrate；
Sb is formed on the electron transport layer2S3Film；The wherein Sb2S3The forming process of film: total using vacuum double source
Vapor deposition techniques, with Sb2S5And Sb2S3As persursor material, make Sb under vacuum conditions2S5And Sb2S3Concurrently vapour depositing
Sb is formed on the electron transport layer2S3Film；
In the Sb2S3Hole transmission layer is formed on film；
Anode is formed on the hole transport layer.
Compared with prior art, the main improvements of the present embodiment: vacuum double source Co-evaporated Deposition technology is used, respectively
Use Sb2S5And Sb2S3As persursor material, double source coevaporation preparation Sb2S3Film.By being precisely controlled Sb2S5And Sb2S3
Hydatogenesis parameter, prepare Sb2S3Film.Sb2S5Presoma sulfur content is high, can provide sulfur-rich atmosphere during vapor deposition, inhibits
The formation in sulphur vacancy in film, with Sb2S3When double source co-evaporation, the two is able to achieve the balance in sulphur vacancy and film crystallization, realizes
High quality Sb is completed under high vacuum environment in situ2S3The preparation of film meets broad area device to improve battery conversion efficiency
Industrialization demand.
In a preferred embodiment, the Sb2S3The forming process of film specifically includes: total using vacuum double source
Vapor deposition techniques, with Sb2S5And Sb2S3As persursor material, by Sb2S5And Sb2S3It is respectively put into two of coevaporation equipment
In evaporation boat, vacuum cavity is vacuumized, to the Sb2S5And Sb2S3Evaporation rate controlled, make Sb2S5With
Sb2S3Concurrently vapour depositing forms Sb on the electron transport layer2S3Film.
Further in a preferred embodiment, 0.01:1 in mass ratio to 1:0.01, by the Sb2S5And Sb2S3
It is respectively put into two evaporation boats of coevaporation equipment.
Further in a preferred embodiment, vacuum cavity is vacuumized, until intracavitary vacuum degree exists
1.0×10-3Pa or less.
In a preferred embodiment, Sb is formed on the electron transport layer2S3After film, in the Sb2S3
It is formed before hole transmission layer, is further comprised the steps of: the Sb after taking-up on film2S3Film is made annealing treatment.
Further in a preferred embodiment, the temperature of the annealing is 240-400 DEG C, at the annealing
The time of reason is 2-30 minutes.
Compared with prior art, the present embodiment Sb2S3The preparation method of film has the advantage that
1, using vacuum double source Co-evaporated Deposition technology, technical maturity, easy to operate and repeatable preparation improve Sb2S3It is thin
Film quality and yield rate and the utilization rate for improving raw material, meet large area industrialization demand；
2, in film forming procedure, the evaporation rate of two evaporation source materials can be accurately controlled, to change evaporation air pressure, double source is total
Steaming can prepare the Sb that thin film composition purity is higher and is evenly distributed2S3Film；
3, by accurately controlling Sb2S5And Sb2S3Evaporation source evaporation current, voltage, power, setting substrate heating schedule and original position
Annealing conditions are easy to obtain required thicknesses of layers and controllable film microstructure performance as required.
The present invention also provides a kind of solar batteries based on double source vapor deposition, from bottom to top successively include the base containing cathode
Bottom, electron transfer layer, Sb2S3Film, hole transmission layer and anode, wherein the Sb2S3Solar battery uses institute of the present invention
The preparation method for the solar battery based on double source vapor deposition stated is prepared.
In a preferred embodiment, the Sb2S3Film with a thickness of 50-1000 nanometers.In the thickness range energy
Visible light is preferably absorbed, and forms photo-generated carrier separation.
Below by embodiment, the present invention is described in detail.
Embodiment 1
Sb in solar battery is prepared using vacuum double source coevaporation method2S3Film, such as using panel solar battery structure:
FTO/c-TiO2/ Sb2S3/ spiro-OMeTAD/Ag first cleans up FTO substrate, by compact titanium dioxide (c-
TiO2) (3000r/30s) is spun in FTO substrate, it is put into 450 DEG C of 4 hours of sintering in high temperature sintering furnace；Then substrate is turned
It moves on in vacuum chamber, the method co-evaporated using vacuum double source prepares that fine and close, uniform, pin-free, crystallinity is high, meets reason
Think stoichiometric ratio Sb2S3Film；Specifically by Sb2S5And Sb2S3It is respectively put into two evaporation boats as shown in Figure 1, passes through essence
Quasi- control Sb2S5And Sb2S3Evaporation rate, make Sb2S5And Sb2S3Sb is formed on the substrate in concurrently vapour depositing2S3Film.More
Specifically, to weigh 0.2 gram of Sb respectively2S3And Sb2S5Powder is respectively put into two evaporation boats, substrate and evaporation source by powder
Distance be 25cm, substrate do not need to heat, and substrate revolving speed is 40r/min, vacuumizes to vacuum cavity, takes out to vacuum degree
To 1.0 × 10-3After Pa, evaporation power supply is opened, is opened after the operating current of two evaporation boats is quickly raised to 100A from 0A simultaneously
Baffle is deposited, until two kinds of powder evaporating completelies generate the Sb that thickness is about 300nm2S3Film slowly adjusts evaporation current
To 0A, molecular pump, mechanical pump are successively closed；It is finally filled with nitrogen into vacuum chamber and takes out Sb2S3Film sample.After taking-up
Film is put into glove box and is heat-treated 10 minutes for 300 degree, then in Sb2S3Spin coating spiro-OMeTAD(2,2 ' on layer, 7,7 '-
Four-(dimethoxy diphenylamines)-spiro fluorenes) hole transmission layer (3000r/30s), Ag electrode is finally deposited, forming device architecture is
FTO/c-TiO2/ Sb2S3The solar battery of/spiro-OMeTAD/Ag.Solar cell properties prepared by the present embodiment are such as
Under:
1, under the conditions of AM1.5 simulated solar irradiation, apparent photogenic voltage effect is presented in the solar battery measured under room temperature environment
It answers；
2, as shown in Fig. 2 solar battery J-V curve graph: the solar battery open-circuit voltage prepared is 0.56V, short circuit electricity
Current density is 12.44mA/cm2, fill factor 41.76%, photoelectric conversion efficiency 2.9%.
Embodiment 2
Sb in solar battery is prepared using vacuum double source coevaporation method2S3Film, such as using mesoporous solar battery structure:
FTO/c-TiO2/meso-TiO2/ Sb2S3/ spiro-OMeTAD/Ag first cleans up FTO substrate, by fine and close dioxy
Change titanium (c-TiO2) (3000r/30s) is spun in FTO substrate, it is put into 450 DEG C of 1 hours of sintering in high temperature sintering furnace；It is cooling
4000rpm spin coating meso-porous titanium dioxide titanium layer (meso-TiO afterwards2), 500 DEG C are sintered 1 hour, and substrate is transferred to vacuum after cooling
Interior, the method co-evaporated using vacuum double source, prepares that fine and close, uniform, pin-free, crystallinity is high, meets desirable chemical meter
Amount compares Sb2S3Film；Specifically by Sb2S5And Sb2S3It is respectively put into two evaporation boats as shown in Figure 1, by being precisely controlled
Sb2S5And Sb2S3Evaporation rate, make Sb2S5And Sb2S3Sb is formed on the substrate in concurrently vapour depositing2S3Film.Specifically
Ground weighs 0.1 gram of Sb respectively2S3With 0.3 gram of Sb2S5Powder is respectively put into two evaporation boats, substrate and evaporation source by powder
Distance be 25cm, substrate do not need to heat, and substrate revolving speed is 40r/min, vacuumizes to vacuum cavity, takes out to vacuum degree
To 1.0 × 10-3After Pa, evaporation power supply is opened, is opened after the operating current of two evaporation boats is quickly raised to 100A from 0A simultaneously
Baffle is deposited, until two kinds of powder evaporating completelies generate the Sb that thickness is about 300nm2S3Film slowly adjusts evaporation current
To 0A, molecular pump, mechanical pump are successively closed；It is finally filled with nitrogen into vacuum chamber and takes out Sb2S3Film sample.After taking-up
Film is put into glove box and is heat-treated 10 minutes for 320 degree, then in Sb2S3Spin coating spiro-OMeTAD hole transmission layer on layer
Ag electrode is finally deposited in (3000r/30s), and forming device architecture is FTO/c-TiO2/ Sb2S3/ spiro-OMeTAD/Ag's
Solar battery.Solar cell properties prepared by the present embodiment are as follows:
1, under the conditions of AM1.5 simulated solar irradiation, apparent photogenic voltage effect is presented in the solar battery measured under room temperature environment
It answers；
2, the solar battery open-circuit voltage prepared is 0.55V, short-circuit current density 11.35mA/cm2, fill factor is
43.6%, photoelectric conversion efficiency 2.72%.
Embodiment 3
Sb in solar battery is prepared using vacuum double source coevaporation method2S3Film, such as using mesoporous solar battery structure:
FTO/c-TiO2/meso-TiO2/ Sb2S3/ spiro-OMeTAD/Ag first cleans up FTO substrate, by fine and close dioxy
Change titanium (c-TiO2) (3000r/30s) is spun in FTO substrate, it is put into 450 DEG C of 1 hours of sintering in high temperature sintering furnace；It is cooling
4000rpm spin coating meso-porous titanium dioxide titanium layer (meso-TiO afterwards2), 500 DEG C are sintered 1 hour, and substrate is transferred to vacuum after cooling
Interior, the method co-evaporated using vacuum double source, prepares that fine and close, uniform, pin-free, crystallinity is high, meets desirable chemical meter
Amount compares Sb2S3Film；By Sb2S5And Sb2S3It is respectively put into two evaporation boats as shown in Figure 1, by being precisely controlled Sb2S5With
Sb2S3Evaporation rate, make Sb2S5And Sb2S3Sb is formed on the substrate in concurrently vapour depositing2S3Film.More specifically, respectively
Weigh 0.3 gram of Sb2S3With 0.1 gram of Sb2S5Powder, powder is respectively put into two evaporation boats, and the distance of substrate and evaporation source is
25cm, substrate do not need to heat, and substrate revolving speed is 20r/min, vacuumize to vacuum cavity, 1.0 are extracted into vacuum degree ×
10-3After Pa, evaporation power supply is opened, baffle is opened after the operating current of two evaporation boats is quickly raised to 100A from 0A simultaneously and carries out
Deposition, until two kinds of powder evaporating completelies generate the Sb that thickness is about 300nm2S3Film, slow adjusting evaporation current to 0A, according to
Secondary closing molecular pump, mechanical pump；It is finally filled with nitrogen into vacuum chamber and takes out Sb2S3Film sample.Film after taking-up is put into
It is heat-treated 10 minutes for 280 degree in glove box, then in Sb2S3Spin coating spiro-OMeTAD hole transmission layer (3000r/ on layer
30s), Ag electrode is finally deposited, forming device architecture is FTO/c-TiO2/ Sb2S3The solar energy of/spiro-OMeTAD/Ag
Battery.Solar cell properties prepared by the present embodiment are as follows:
1, under the conditions of AM1.5 simulated solar irradiation, apparent photogenic voltage effect is presented in the solar battery measured under room temperature environment
It answers；
2, the solar battery open-circuit voltage prepared is 0.57V, and short-circuit current density is 12.04 mA/cm2, fill factor is
40.3%, photoelectric conversion efficiency 2.76%.
In conclusion a kind of solar battery and preparation method thereof based on double source vapor deposition provided by the invention, the present invention
Using vacuum double source Co-evaporated Deposition technology, Sb is used2S5And Sb2S3As persursor material, coevaporation preparation Sb2S3Film.
Compared with prior art, Sb of the present invention2S3The preparation method of film has the advantage that 1, using vacuum double source Co-evaporated Deposition
Technology, technical maturity, easy to operate and repeatable preparation, improves Sb2S3Film quality and yield rate and the benefit for improving raw material
With rate, meet large area industrialization demand；2, in film forming procedure, the evaporation rate of two evaporation source materials can be accurately controlled,
To change evaporation air pressure, double source steams the Sb that can prepare that thin film composition purity is higher and is evenly distributed altogether2S3Film；3, pass through
Accurate control Sb2S5And Sb2S3Evaporation source evaporation current, voltage, power, setting substrate heating schedule and in-situ annealing condition, easily
In obtaining required thicknesses of layers and controllable film microstructure performance as required.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations all should belong to the guarantor of appended claims of the present invention
Protect range.
Claims (9)
1. a kind of preparation method of the solar battery based on double source vapor deposition, which is characterized in that comprising steps of
Substrate containing cathode is provided；
Electron transfer layer is formed on the substrate；
Sb is formed on the electron transport layer2S3Film；The wherein Sb2S3The forming process of film: total using vacuum double source
Vapor deposition techniques, with Sb2S5And Sb2S3As persursor material, make Sb under vacuum conditions2S5And Sb2S3Concurrently vapour depositing
Sb is formed on the electron transport layer2S3Film；
In the Sb2S3Hole transmission layer is formed on film；
Anode is formed on the hole transport layer.
2. the preparation method of the solar battery according to claim 1 based on double source vapor deposition, which is characterized in that described
Sb2S3The forming process of film specifically includes: vacuum double source Co-evaporated Deposition technology is used, with Sb2S5And Sb2S3As presoma
Material, by Sb2S5And Sb2S3It is respectively put into two evaporation boats of coevaporation equipment, vacuum cavity is vacuumized, to institute
State Sb2S5And Sb2S3Evaporation rate controlled, make Sb2S5And Sb2S3Concurrently vapour depositing is formed on the electron transport layer
Sb2S3Film.
3. the preparation method of the solar battery according to claim 2 based on double source vapor deposition, which is characterized in that press quality
Than 0.01:1 to 1:0.01, by the Sb2S5And Sb2S3It is respectively put into two evaporation boats of coevaporation equipment.
4. the preparation method of the solar battery according to claim 2 based on double source vapor deposition, which is characterized in that vacuum
Cavity is vacuumized, until intracavitary vacuum degree is 1.0 × 10-3Pa or less.
5. the preparation method of the solar battery according to claim 1 based on double source vapor deposition, which is characterized in that described
Sb is formed on electron transfer layer2S3After film, in the Sb2S3It is formed before hole transmission layer, is further comprised the steps of: on film
By the Sb after taking-up2S3Film is made annealing treatment.
6. the preparation method of the solar battery according to claim 5 based on double source vapor deposition, which is characterized in that described to move back
The temperature of fire processing is 240-400 DEG C.
7. the preparation method of the solar battery according to claim 5 based on double source vapor deposition, which is characterized in that described to move back
The time of fire processing is 2-30 minutes.
8. a kind of solar battery based on double source vapor deposition, successively include from bottom to top substrate containing cathode, electron transfer layer,
Sb2S3Film, hole transmission layer and anode, which is characterized in that the solar battery is using described in any one of claim 1-7
The preparation method of solar battery based on double source vapor deposition be prepared.
9. the solar battery according to claim 8 based on double source vapor deposition, which is characterized in that the Sb2S3The thickness of film
Degree is 50-1000 nanometers.
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