CN109463000A - Manufacturing method, the manufacturing method of mask blank, the manufacturing method of transfer mask, the manufacturing method of semiconductor devices, mask blank substrate, mask blank and the transfer mask of mask blank substrate - Google Patents

Manufacturing method, the manufacturing method of mask blank, the manufacturing method of transfer mask, the manufacturing method of semiconductor devices, mask blank substrate, mask blank and the transfer mask of mask blank substrate Download PDF

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CN109463000A
CN109463000A CN201780039527.7A CN201780039527A CN109463000A CN 109463000 A CN109463000 A CN 109463000A CN 201780039527 A CN201780039527 A CN 201780039527A CN 109463000 A CN109463000 A CN 109463000A
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Prior art keywords
substrate
mask blank
mask
point
zoning
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CN109463000B (en
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田边胜
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The present invention provides a kind of mask blank substrate, mask blank and transfer mask, even if having the transfer mask of more sparse transfer pattern with substrate manufacture without using the mask blank of high standard, by the transfer with mask be placed in high NA exposure device mask carrying stage and in the case where being exposed transfer to the etchant resist on chip, can also be not easy to cause focal error.In addition, it is possible to provide their manufacturing method.Square zoning (TA) is set in the main surface (P) of substrate, setting specific point (A~D) is distinguished in the corner of zoning (TA), obtain the height of specified point (A~D) from datum plane, setting passes through 3 points of imaginary plane in specified point (A~D), and set the intersection point for passing through remaining specified point and vertical line and imaginary plane perpendicular to datum plane, the distance between remaining specified point and the intersection point are calculated, and the substrate that the distance meets preset benchmark is chosen to be mask blank substrate.

Description

The manufacturing method of mask blank substrate, the manufacturing method of mask blank, transfer are with covering The manufacturing method of mould, mask blank substrate, is covered the manufacturing method of semiconductor devices Mask is used in mold base material and transfer
Technical field
The present invention relates to the manufacturing method of mask blank substrate, the manufacturing method of mask blank, the systems of transfer mask Make method, the manufacturing method of semiconductor devices, mask blank substrate, mask blank and transfer mask.
Background technique
In recent years, in order to cope with the miniaturization of semiconductor devices, the high NA of the exposure device of ArF exposure light is used (Numerical Aperture) change is constantly pushed into, and then introduces immersion exposure technology, has pushed further high NAization.It is logical Crossing makes the high NAization of exposure device, when etchant resist of the fine pattern for being set to transfer mask on chip is exposed transfer Resolving power improve.The exposure device of step-scan mode makes to expose optical scanning transfer mask and chip, by transfer mask Transfer pattern exposure be transferred to the etchant resist on chip.
But if the focusing without transfer mask plane and wafer face in scanning adjusts, it will occur to focus wrong Accidentally, imaging position can substantially off-target focus, cause the resolving power of the transfer pattern in etchant resist to be greatly reduced.
As disclosed in patent document 1, with the high NAization of exposure device, the depth of focus (DOF:Depth Of Focus) is no It is disconnected to become smaller.When the depth of focus is small, the allowed band deviateed from pinpointed focus becomes smaller, and therefore, focus management becomes very strict. In addition, as disclosed in patent document 2, the focal error of generation is become easy because the depth of focus becomes smaller in order to reduce, needs to make The flatness of transfer mask (substrate) when exposure transfer becomes good state.Moreover, being disclosed in patent document 2, just Form the upper surface (main surface) of the mask pattern (transfer pattern) of photomask blank substrate (substrate that mask is used in transfer) For shape, when the upper surface sets a pair of of belt-like zone (or four side annular sections), the belt-like zone (or four side ring shapes Region) it is tilted separately down towards substrate periphery, and the maximum value of the height in the belt-like zone (or four side annular sections) And the difference of minimum value is that 0.5 μm of shape below is best.
Existing technical literature
Patent document
Patent document 1:(Japan) special open 2009-272387 bulletin
Patent document 2:(Japan) special open 2005-043838 bulletin
Summary of the invention
Problems to be solved by the invention
Substrate (mask blank substrate) disclosed Patent Document 2 for transfer mask is if can be applied to have Non- high NA exposure device is then difficult to image in the mask blank of the transfer mask of the fine pattern of the degree of the etchant resist on chip Material uses substrate.
This mask blank is main surface (side of the film of setting transfer pattern formation, i.e. a surface) with substrate Flatness it is higher, and then meet the high standard substrate of relevant to main surface shape stringent condition.By in multiple stages When carrying out manufacturing mask blank substrate to the existing preparation method of the process of multiple substrates two sides grinding simultaneously, above-mentioned height can be obtained The ratio of the mask blank substrate of specification is smaller.Therefore, the mask blank of high standard is with substrate generally than other mask blanks With the valuableness of substrate.
In general, semiconductor devices is fabricated to, forming layer structure and etchant resist on chip utilize transfer mask Expose transfer pattern to etchant resist, development treatment etc. carried out to the etchant resist and forms corrosion-resisting pattern, using the corrosion-resisting pattern as Mask is etched and forms pattern in layer structure, produces semiconductor devices and above-mentioned operation is repeated.Therefore, Each layer of structure needs at least one transfer to use mask.For manufacturing semiconductor devices, need to produce by the semiconductor devices Each layer structure the transfer transfer mask set neat with mask collection.
If not and it is that the exposure device of high NA is then difficult to image in chip that all layers of structure of non-semiconductor components, which all have, On etchant resist degree fine pattern, there is also with more sparse pattern layer structure.Therefore, it is used in a transfer In mask set, the transfer mask with above-mentioned fine pattern and the transfer mask with more sparse transfer pattern are common In the presence of.The above-mentioned transfer mask with more sparse transfer pattern, even if using the mask blank substrate of non-high standard, That is, pattern imaging can also be made in the etchant resist on chip even if the mask blank substrate manufacture less high using flatness.
But if the mask blank substrate manufacture for using above-mentioned non-high standard had into more sparse transfer figure The transfer of case is placed on the mask carrying stage of the exposure device of high NA with mask, is being exposed transfer to the etchant resist on chip When, there are problems that being easy to cause focal error.On the other hand, for having the transfer of transfer pattern fine to a certain degree to use Mask also begins trying the mask blank substrate manufacture using non-high standard, and be placed on the exposure device of high NA Mask carrying stage carry out using.In this case, right when the mask carrying stage for the exposure device that the transfer is placed in high NA with mask When etchant resist on chip is exposed transfer, the problem of being easy to cause focal error is equally existed.
Solution for solving the problem
The present invention has mode below as the scheme for solving the above subject.
(mode 1)
A kind of manufacturing method of mask blank substrate, the mask blank are used for substrate with one group of opposite master One main surface of the substrate on surface is provided with the manufacture of the mask blank of the film of transfer pattern formation, which is characterized in that Include:
For a main surface of the substrate, setup algorithm region, and to four corners in the zoning The process of respective setting specific point, wherein the zoning is including at least one side on the basis of the center of the substrate For the region of the square of the square area of 132mm；
In the process for the height that all specified points rise obtained from datum plane；
Setting passes through the imaginary plane of three specified points in all specified points, and sets and pass through remaining spy Fixed point and perpendicular to the intersection point of the vertical line of the datum plane and the imaginary plane, the calculating remaining specified point with it is described The process of the distance between intersection point；
The process that substrate by the distance of calculating less than 0.2 μm is chosen to be mask blank substrate.
(mode 2)
As mode 1 record mask blank substrate manufacturing method, which is characterized in that the zoning be with institute State the region identical or smaller for the square area of 146mm on one side on the basis of the center of substrate.
(mode 3)
Such as the manufacturing method for the mask blank substrate that mode 1 or 2 is recorded, which is characterized in that at one of the substrate Multiple measuring points are set in the zoning of main surface and obtain the height from the datum plane of the measuring point When, the specified point in the zoning and in the height from the datum plane of the measuring point, from highest The difference that value subtracts minimum is greater than 0.2 μm.
(mode 4)
Such as the manufacturing method for the mask blank substrate that any one of mode 1~3 is recorded, which is characterized in that the benchmark Plane are as follows: set multiple measuring points in the zoning of a main surface of the substrate, be based on utilizing surface shape The height of the measuring point obtained from measurement device measurement using the reference plane of the surface-profile measuring instrument as benchmark Information is spent, the least square plane, that is, datum plane being fitted by least square method.
(mode 5)
Such as the manufacturing method for the mask blank substrate that any one of mode 1~4 is recorded, which is characterized in that one The r.m.s. roughness Rq of main surface is 0.25nm or less.
(mode 6)
A kind of manufacturing method of mask blank, which is characterized in that including covering described in any one of pass-through mode 1~5 The transfer pattern is arranged in the one main surface for the mask blank substrate that the manufacturing method of mold base material substrate produces The process of the film of formation.
(mode 7)
A kind of manufacturing method of mask blank is provided in a main surface of the substrate with one group of opposite main surface The film of pattern formation is transferred, the manufacturing method is characterised by comprising:
For being provided with the surface of the film of the substrate of the film, setup algorithm region, and to the calculating area The process of the respective setting specific point of four corners in domain, wherein the zoning is including at least with the substrate On the basis of center is on one side the region of the square of the square area of 132mm；
In the process for the height that all specified points rise obtained from datum plane；
Setting passes through the imaginary plane of three specified points in all specified points, and sets and pass through remaining spy Fixed point and perpendicular to the intersection point of the vertical line of the datum plane and the imaginary plane, the calculating remaining specified point with it is described The process of the distance between intersection point；
The process that the substrate for being provided with the film by the distance of calculating less than 0.2 μm is chosen to be mask blank.
(mode 8)
As mode 7 record mask blank substrate manufacturing method, which is characterized in that the zoning be with institute State the region identical or smaller for the square area of 146mm on one side on the basis of the center of substrate.
(mode 9)
Such as the manufacturing method for the mask blank substrate that mode 7 or 8 is recorded, which is characterized in that on the surface of the film The zoning in multiple measuring points of setting and when obtaining the height from the datum plane of the measuring point, in institute It states in the height from the datum plane in the specified point and the measuring point in zoning, is subtracted from peak The difference of minimum is greater than 0.2 μm.
(mode 10)
Such as the manufacturing method for the mask blank substrate that any one of mode 7~9 is recorded, which is characterized in that the benchmark Plane are as follows: set multiple measuring points in the zoning of the main surface of the film, be based on utilizing surface shape measuring The height letter of the measuring point obtained from device measurement using the reference plane of the surface-profile measuring instrument as benchmark Breath, the least square plane, that is, datum plane being fitted by least square method.
(mode 11)
A kind of manufacturing method of mask blank, which is characterized in that including covering described in any one of pass-through mode 6~10 The process of transfer pattern is formed on the film for the mask blank that the manufacturing method of mold base material produces.
A kind of (mode 12) mask blank substrate, the mask blank are used for substrate with one group of opposite main table One main surface of the substrate in face is provided with the manufacture of the mask blank of the film of transfer pattern formation, which is characterized in that institute Stating substrate and setting on the basis of including at least by the center of the substrate in one main surface is on one side the square of 132mm Region, that is, zoning of the square in region, and to the respective setting specific point of four corners in the zoning, The height that all specified points rise obtained from datum plane, setting pass through three specified points in all specified points Imaginary plane, and set by remaining specified point and perpendicular to the vertical line of the datum plane and the imaginary plane Intersection point, when calculating the distance between the remaining specified point and the intersection point, the distance of calculating is less than 0.2 μm.
(mode 13)
As mode 12 record mask blank substrate, which is characterized in that the zoning be with the substrate Region identical or smaller for the square area of 146mm on one side on the basis of center.
(mode 14)
The mask blank substrate recorded such as mode 12 or 13, which is characterized in that in main surface of the substrate When setting multiple measuring points in the zoning and obtaining the height from the datum plane of the measuring point, the meter In the height from the datum plane for calculating the specified point and the measuring point in region, minimum is subtracted from peak Difference be greater than 0.2 μm.
(mode 15)
The mask blank substrate recorded such as any one of mode 12~14, which is characterized in that the datum plane are as follows: Multiple measuring points are set in the zoning of one main surface of the substrate, are based on surveying using surface-profile measuring instrument The elevation information of the measuring point obtained from fixed using the reference plane of the surface-profile measuring instrument as benchmark, passes through Least square plane, that is, datum plane of least square method fitting.
(mode 16)
The mask blank substrate recorded such as any one of mode 12~15, which is characterized in that one main surface R.m.s. roughness Rq is 0.25nm or less.
(mode 17)
A kind of mask blank, which is characterized in that the institute of the mask blank substrate described in any one of mode 12~16 State the film that a main surface has the transfer pattern formation.
A kind of (mode 18) mask blank is provided in a main surface of the substrate with one group of opposite main surface and turns It is patterned the film to be formed, which is characterized in that
The mask blank includes at least the surface set of the film one on the basis of the center of the substrate Side is region, that is, zoning of the square of the square area of 132mm, and to four corners in the zoning Respective setting specific point, in the height that all specified points rise obtained from datum plane, setting passes through all spies The imaginary plane of three specified points in fixed point, and set through remaining specified point and hanging down perpendicular to the datum plane The intersection point of line and the imaginary plane, calculate the distance between the remaining specified point and the intersection point when, calculating it is described Distance is less than 0.2 μm.
(mode 19)
The mask blank recorded such as mode 18, which is characterized in that the zoning is to be with the center of the substrate The region identical or smaller for the square area of 146mm on one side of benchmark.
(mode 20)
The mask blank recorded such as mode 18 or 19, which is characterized in that in the zoning on the surface of the film Multiple measuring points of interior setting and when obtaining the height from the datum plane of the measuring point, in the zoning In the height from the datum plane of the specified point and the measuring point, the difference for subtracting minimum from peak is greater than 0.2μm。
(mode 21)
The mask blank recorded such as any one of mode 18~20, which is characterized in that the datum plane are as follows: described thin Multiple measuring points are set in the zoning of the main surface of film, based on obtained from surface-profile measuring instrument measurement The elevation information of the measuring point using the reference plane of the surface-profile measuring instrument as benchmark, passes through least square method The least square plane of the fitting, that is, datum plane.
(mode 22)
A kind of transfer mask, which is characterized in that mask blank described in any one of mode 17~21 it is described thin Film is provided with transfer pattern.
(mode 23)
A kind of manufacturing method of semiconductor devices, which is characterized in that by the system of transfer mask described in pass-through mode 11 The transfer that the method for making produces is placed in the mask carrying stage of exposure device with mask, by photoetching process by the transfer mask Transfer pattern is transferred on semiconductor substrate.
(mode 24)
A kind of manufacturing method of semiconductor devices, which is characterized in that transfer described in mode 22 is placed in exposure with mask The transfer pattern of transfer mask is transferred on semiconductor substrate by the mask carrying stage of electro-optical device by photoetching process.
Invention effect
The manufacturing method of mask blank substrate according to the present invention or the manufacturing method of mask blank are manufactured by these The mask blank that method produces substrate or the transfer produced using mask blank are not susceptible to mask using high NA's Exposure device is exposed focal error when transfer.In addition, mask blank substrate according to the present invention or mask blank, make The transfer produced with mask blank substrate or mask blank is not susceptible to carry out using the exposure device of high NA with mask Focal error when exposure transfer.
Detailed description of the invention
Fig. 1 is the general plan for indicating an example of in embodiments of the present invention, substrate main surface and zoning Figure.
Fig. 2 is to indicate that the outline of in embodiments of the present invention, substrate main surface, imaginary plane and datum plane cuts open Face figure.
Fig. 3 is to indicate in embodiments of the present invention, the flatness on the basis of datum plane and be with imaginary plane The figure of correlation between flatness of the difference of the flatness of benchmark with tilting distance or on the basis of datum plane.
Fig. 4 is the figure of contour distribution for the main surface of substrate A1 for indicating embodiment 1 etc..
Fig. 5 is the figure of contour distribution for the main surface of substrate A2 for indicating embodiment 2 etc..
Fig. 6 is the figure of contour distribution for the main surface of substrate B1 for indicating comparative example 1 etc..
Fig. 7 is the figure of contour distribution for the main surface of substrate A3 for indicating embodiment 3 etc..
Fig. 8 is the figure of contour distribution for the main surface of substrate A4 for indicating embodiment 4 etc..
Fig. 9 is the figure of contour distribution for the main surface of substrate B2 for indicating comparative example 2 etc..
Specific embodiment
[manufacturing method and mask blank substrate of mask blank substrate]
Here, the manufacturing method and mask blank for mask blank substrate are illustrated with substrate.Firstly, illustrating this Then the technical concept of invention indicates the embodiment based on the design together with comparative example.
The present inventor for the substrate manufacture of the mask blank without using high standard have more sparse transfer pattern or The transfer with mask is placed in the exposure device of high NA and to chip by the transfer mask of fine transfer pattern to a certain degree On etchant resist be exposed transfer in the case where be also able to suppress focal error the technological means of generation attentively grind Study carefully.
In general, the surface shape of the main surface of substrate is generally square shape, filled using surface shape measuring Set (surface shape resolver) acquisition.The surface-profile measuring instrument used in this case is strong by the relevant tendency of laser etc Inspection illumination be incident upon the measurement region entirety of measured object, the light that the surface reflection of object is measured by this with by Interference fringe image is generated between the light of reference surface reflection with high flat degree, image solution is carried out to the interference fringe image Analyse and obtain the surface shape of the measured object.
It is carried out using the surface shape measuring of the substrate of the surface-profile measuring instrument by following methods.Firstly, for By interference fringe image obtained by the above method, with latticed configuration measuring point and image solution is carried out on the major surface of the substrate The processing such as analysis, obtains the elevation information (being at this time, for example, the reference plane of measurement device as the plane of benchmark) of each measuring point. Then, the elevation information based on each measuring point calculates the face (least square plane) being fitted by least square method, is set to Datum plane.Then, by the elevation information of above-mentioned each measuring point be converted into using the datum plane (least square plane) as Its result, is set as the surface shape information of each measuring point by the height of each measuring point of benchmark.
In the past, using substrate main surface, (main surface, that is, set the index of differentiation high standard substrate and non-high standard substrate Set transfer pattern formation film side) flatness.When definition has manufactured transfer mask on the major surface of the substrate Including at least the predetermined region in the region for forming transfer pattern, according to each measurement using above-mentioned least square plane as benchmark Point height (that is, surface shape information) calculates the TIR of the difference as maximum height and minimum constructive height in the predetermined region (Total Indicator Reading) value, is used as flatness.Gone out using the high high standard substrate manufacture of the flatness Transfer mask, is exposed transfer to the etchant resist on chip on the mask carrying stage of exposure device for being placed on high NA When, it is not susceptible to focal error.
On the other hand, the present inventor uses this for being not the multiple substrates for being high standard according to the index of the flatness Transfer mask of a little substrate manufactures with identical transfer pattern, is placed on the mask carrying stage of the exposure device of high NA to crystalline substance The etchant resist of on piece is exposed transfer, demonstrates the tendency that focal error occurs.The result shows that even with substantially phase The transfer mask of the substrate of same flatness, also there is the incidental mask of focal error and non-incident mask.That is, Cicada resets the substrate that focal error is not susceptible to from non-high standard substrate according to the flatness index used in the past A reference value is difficult.
Then, for the substrate for being easy to happen focal error of roughly the same flatness and being not susceptible to focal error Each surface shape of substrate, the present inventor further study the difference of its tendency.It is not susceptible to focus mistake as a result, having found out (generally square) inclination having on from central side towards the direction of each corner of the surface shape of the main surface of substrate accidentally It is inclined to similar in four corners, in contrast, is easy to happen the surface shape (generally square) of the substrate of focal error The tendency that at least some corner is different is tilted in the direction from central side towards corner.The exposure device of high NA During being irradiated to transfer with the scanning that mask is exposed light, it can be irradiated the adjustment of condition in each scan position, with Close to pinpointed focus.For being easy to happen the main surface shape that there is deviation tendency in the diagonal directions of the substrate of focal error The adjustment of shape, the irradiation condition can become difficult, thus it is speculated that this is the major reason for being easy to happen focal error.
Therefore, it is studied for selecting the new benchmark of this substrate for being not susceptible to focal error.With each measuring point The height using least square plane as benchmark define the surface shape of substrate main surface, substrate four corners respectively It sets measuring point (specified point), according to each number of the specific point height in four corners using least square plane as benchmark Value is studied in specified value selected reference below, as a result, selected substrate is the substrate for being not susceptible to focal error. But not according to more there is the substrates for being not susceptible to focal error in the selected substrate of the selected reference.According to the choosing Determine benchmark, many substrates that should be selected are unselected, and these substrates are the substrates for being not susceptible to focal error.
Each numerical value of the height of specified point in four corners of use is in the feelings of specified value selected reference below Under condition, there is single inclined main table towards the end surface side opposite with an end face for an end surface side of the main surface from substrate The substrate of face shape would not be selected if inclination is larger.But the substrate of the surface shape with this main surface, pass through The slant correction function of exposure device can be relatively easily corrected, it is therefore contemplated that being to be not susceptible to focal error Substrate.Selected reference has to also come the substrate with this main surface tendency as the substrate for being not susceptible to focal error It is selected.
The present inventor's further progress research, as a result, it has been found that good benchmark are as follows: setting is specific by four of main surface The imaginary plane of three specified points in point, calculate the distance between a remaining specified point and the imaginary plane (specifically and Speech, the distance on the basis of the direction vertical relative to least square plane), the distance of calculating is used as selected be not susceptible to The benchmark of the substrate of focal error.This calculated is placed by the transfer gone out by the substrate manufacture with mask apart from big substrate When the mask carrying stage of the exposure device of high NA, the chuck of three corners and mask carrying stage in four corners of substrate When surface contacts, a remaining corner will be easy to tilt from chuck surface.Then turn for what is placed with this state When print is scanned exposure with mask, it is difficult to correct focusing by the adjustment etc. of lighting condition, is easy to happen focal error.This inclines To the exposure dress in the high NA using soft chuck (that is, method of clamping that the transfer on clamping mask carrying stage uses the power of mask weaker) Become in the case where setting significant.Hereinafter, the distance calculated in the above described manner is suitably known as " tilting distance ".
On the other hand, the small substrate of distance calculated by said sequence, by the transfer gone out by the substrate manufacture with covering Three corners and mask carrying stage when mould is placed in the mask carrying stage of the exposure device of high NA, in four corners of substrate Chuck surface contact when, a remaining corner is not easy to tilt from chuck surface, even if tilting, tilting amount is also small.So It, can be sufficiently poly- by corrections such as the adjustment of lighting condition when being scanned exposure with mask to the transfer placed with this state afterwards Coke is not susceptible to focal error.In addition, the transfer mask gone out by the high high standard substrate manufacture of flatness, substrate main surface Each measuring point the height using least square plane as benchmark maxima and minima difference it is substantially much smaller.Cause This, when the mask carrying stage for the exposure device that the transfer gone out by the high standard substrate manufacture is placed in high NA with mask, in substrate Four corners in three corners contacted with the chuck surface of mask carrying stage when, be not susceptible to a remaining corner The phenomenon that portion is tilted from chuck surface.
The manufacturing method for the mask blank substrate completed as the result attentively studied above is a kind of mask blank With the manufacturing method of substrate, the mask blank is used for a main table in the substrate with one group of opposite main surface with substrate Face is provided with the manufacture of the mask blank of the film of transfer pattern formation, this method comprises: for a main surface of substrate, Setup algorithm region, and to the process of the respective setting specific point of four corners in zoning, wherein the zoning Be including at least on the basis of the center of substrate on one side be the square area of 132mm square region；All The process for the height that specified point rises obtained from datum plane；Setting is flat by the imagination of three specified points in all specified points Face, and the intersection point by remaining specified point and vertical line and imaginary plane perpendicular to datum plane is set, it calculates remaining The process of the distance between specified point and intersection point；Substrate by the distance of calculating less than 0.2 μm is chosen to be mask blank substrate Process.
Hereinafter, carrying out more specific description to the embodiment of the manufacturing method of mask blank substrate.Firstly, from glass Block cuts out the shape of mask blank substrate, then, carries out the grinding of the main surface of the substrate that cuts out of grinding, end face and fillet surface Process then carries out the grinding process on the surface of fine gtinding main surface, end face and fillet surface.The grinding process of main surface is logical Often it is divided into multiple stages progress.The method of grinding is various, is not specially limited herein, but preferably, is carrying out using oxygen After changing the grinding process of two main surfaces of grinding agents simultaneous grinding substrate such as cerium, carry out using the grinding agents simultaneous grinding such as silica gel The grinding process of two main surfaces of substrate.The substrate of this grinding process that have passed through multiple stages has and has regulation or more Flatness and be the small mirror surface of surface roughness main surface.
The material of the mask blank substrate is not particularly limited as long as having high-transmission rate to exposure light.As this Synthetic quartz glass, soda-lime glass, aluminosilicate glass, pyrex, alkali-free glass, calcirm-fluoride can be used in the material of substrate Glass etc..In these materials, especially transmission of the synthetic quartz glass in ArF excimer laser or the wavelength region shorter than its Rate is high, so being suitble to mask blank substrate of the invention used in the exposure device of high NA.
Then, it carries out in a main surface of substrate (transfer pattern formation being arranged when manufacture mask blank and uses the one of film The main surface of side) setup algorithm region process.About the point, it is illustrated using Fig. 1.Fig. 1 is seen from a side main surface P Examine the plan view of substrate 1.As shown in Figure 1, the zoning T of square area of the setting on the basis of the center O of substrate 1A, Eye is in zoning TAIn the surface shape of substrate 1 select mask blank substrate.Zoning T in present embodimentA It is required that for the square region for being the square area for being 132mm including at least one side, wherein described on one side for 132mm's Square area is that the transfer produced by the substrate 1 is formed with transfer when being placed on the mask carrying stage of exposure device with mask Pattern and the region for being exposed light irradiation.That is, even if by zoning TAThe length for being set as one side is the square region of 132mm Domain can also obtain effect of the present invention.On the other hand, zoning TAThe pros for being more preferably 146mm with the length on one side The identical or smaller region in shape region.This is because until the square area with such edge lengths, after use When the surface shape for the surface-profile measuring instrument measurement substrate main surface stated, it can be risen with high precision obtained from datum plane Elevation information.
Then, as shown in Figure 1, carrying out in zoning TAIn four corner CA、CB、CC、CDEach region in (include On the boundary line in region) process of setting specific point A, B, C, D, these specified points A, B, C, D are for measuring from datum plane PRThe point (i.e. measuring point) for the height that (referring to Fig. 2) rises, and for setting point required for aftermentioned imaginary plane.Four angles Fall portion CA、CB、CC、CDIt is for example by zoning TAVertex as common vertex, and be set in zoning TAInside Square area.Corner CAEtc. edge lengths of square areas be, for example, 3mm.If the pros for being 3mm on one side In the range of shape region, the datum plane P of main surface PRThe height change risen is small, when change is set in the square area From aftermentioned imaginary plane P when the position of interior specified point A etc.IThe height change risen is also small.Corner CAEqual square regions The length on the one side in domain is more preferably 2mm, further preferably 1mm.Furthermore it is highly preferred that specified point A, B, C, D are set in meter Calculate region TAEach vertex.
Then, carry out obtaining at least four specified point A, B, C, D on main surface P from datum plane PRThe height risen Process.Four specified points A, B, C, D on main surface P from datum plane PRThe height risen uses above-mentioned surface shape measuring Device obtains.As surface-profile measuring instrument at this time, such as UltraFLAT 200M (Corning TROPEL Co., Ltd. System) it is suitable.In above-mentioned surface-profile measuring instrument, to the interference fringe image of acquisition by carry out image analysis come It is transformed into the surface shape (elevation information) of the main surface P of substrate 1, but the plane of the benchmark as the elevation information in the stage It is the reference plane or plane in parallel of surface-profile measuring instrument.But the main surface of the reference plane and substrate 1 it Between the depth of parallelism depend on the positional relationship when substrate 1 is arranged in surface-profile measuring instrument, therefore the depth of parallelism is not necessarily high. In consideration of it, preferably, according to the multiple measurements using reference plane as benchmark for using surface-profile measuring instrument to measure The elevation information of point calculates least square plane, by the surface shape (height of each measuring point from reference plane) of main surface P It is transformed into using the least square plane as datum plane PRHeight.Preferably, the least square plane is according to including at least The measuring point of four specified points A, B, C, D calculate.
On the other hand, in zoning TAIt is interior, other than above-mentioned specified point, multiple measuring point N can also be set, are surveyed Fixed point N is used to measure the surface shape of substrate 1, i.e., for measure main surface P from datum plane PRThe height risen.In Fig. 1 only Describe measuring point Nx-1、Nx、Nx+1, but preferably set for measure and calculation region TAThe surface shape of whole substrate 1 is sufficient The measuring point of quantity.Measuring point N is preferably configured on the main surface P of substrate 1 latticed.Each measuring point N in this case it Between be preferably spaced 2mm hereinafter, more preferably 1mm or less.Measuring point N also may be set in zoning TAThe main table in outside On face.
In addition, being the setup algorithm region T on the main surface P of substrate 1 in above-mentioned processAWith specified point A, B, C, D it Afterwards, elevation information just is obtained using surface-profile measuring instrument.But including at least zoning TASize main surface It, can also be in setup algorithm region if being configured to latticed by measuring point N and obtaining elevation information in the measurement region of P TAProcess before use surface-profile measuring instrument obtain elevation information.In this case, flat as least square in calculating The datum plane P in faceRWhen, it is preferable to use with surface-profile measuring instrument measurement measurement region in all measuring point N ginseng Elevation information according to plane as benchmark.
Then, it carries out setting and passes through the imaginary plane P of three specified points in specified point A, B, C, DIProcess.Then, Carry out setting vertical line and imaginary plane PIIntersection point process, the vertical line pass through imaginary plane PISetting in it is not used surplus Remaining specified point and perpendicular to datum plane PR.In turn, carry out calculating the work of the distance between the intersection point and remaining specified point Sequence.For these processes, it is illustrated using Fig. 2.Fig. 2 is the imaginary plane P that setting passes through specified point A, B, CIAnd it will be specific The schematic cross-section of substrate 1 when point D is set as remaining specified point, comprising specified point D.Will by remaining specified point D and Perpendicular to datum plane PRVertical line and datum plane PRIntersection point be set as D0.By the vertical line and imaginary plane PIIntersection point be set as D1.Then, by utilizing the acquired D such as surface-profile measuring instrument0The distance between D ZDSubtract D0With D1Between away from From calculating remaining specified point D and intersection point D1The distance between ZD1。
In turn, the distance Z that will be calculated in this way is carried outD1As New Set, its value is met to the base of benchmark (lower than a reference value) The process that plate is chosen to be mask blank substrate.Hereinafter, by the New Set calculated in this way (that is, distance ZD1) be known as " and tilt away from From ".In addition, being in the present embodiment will be imaginary plane by the plane sets of specified point A, B, C, but can also will pass through The plane sets of any three specified points are imaginary plane.In addition, " tilting " this term in the title of above-mentioned New Set It is the convenience in order to state, above-mentioned remaining specified point D can not also be from imaginary plane PIIt tilts.
Various investigation have been carried out for tilting the relevance between distance and the generation of focal error, the results showed that, as The determinating reference for tilting distance, can be obtained sufficient performance " less than 0.2 μm " by being set as.In the present invention, distance will be tilted Substrate less than 0.2 μm is chosen to be mask blank substrate.It is used by using the mask blank by being selected with this determinating reference The transfer mask that substrate manufacture goes out, can reduce the hair of focal error when being exposed transfer using the exposure device of high NA It is raw.In addition, being more preferably that 0.18 μm of substrate below is chosen to be mask blank substrate by above-mentioned tilting distance, further It is that 0.15 μm of substrate below is chosen to be mask blank substrate that distance, which will preferably be tilted,.On the other hand, make to be unsatisfactory for determining The substrate of benchmark again returns to grinding process or via partial operation process, carries out the judgement of the tilting distance again, alternatively, useless Abandon the substrate.
Hereinafter, being illustrated to Fig. 3.Arbitrarily prepare 200 substrates, for each substrate, according to above-mentioned sequence, measurement The surface shape of main surface P calculates the datum plane P of least square planeR, imaginary plane P is further calculated respectivelyIAnd tilting Distance ZD1.Then, for each substrate, according to datum plane PRThe surface shape of main surface P as benchmark, calculate as with Toward index, on the basis of the center of substrate be on one side the flatness (TIR value) in the square area of 132mm.Then, For each substrate, according to imaginary plane PIOn the basis of main surface P surface shape, calculate on the basis of the center of substrate It is on one side the flatness (TIR value) in the square area of 132mm.Then, it for each substrate, calculates with datum plane PRAs The flatness of benchmark with imaginary plane PIThe difference of flatness as benchmark.Fig. 3 indicates that horizontal axis is " using datum plane as base The difference [μm] of quasi- flatness and the flatness on the basis of imaginary plane ", the longitudinal axis are " to tilt distance or be with datum plane The flatness [μm] of benchmark ", and illustrate the result of 200 substrates.
For " difference of flatness and the flatness on the basis of imaginary plane on the basis of datum plane " and " tilting Relationship between distance " diagram (in Fig. 3 ● diagram) calculate linear fit function as a result, its linear fit function Coefficient of determination R2It is 0.746, is able to confirm that correlation with higher.Accordingly it is believed that passing through the specific of four corners The imaginary plane P of three specified points in pointIDatum plane P relative to least square planeRChange bigger substrate, utilizes The transfer mask that the substrate manufacture goes out more has the tendency for being easy to happen focal error.On the other hand, for " with datum plane On the basis of flatness and flatness using on the basis of imaginary plane difference " with as previous index " with datum plane On the basis of flatness " between relationship the diagram (diagram of the in Fig. 3.) calculate linear fit function as a result, its line The coefficient of determination R of property fitting function2It is 0.032, cannot get correlation.It is able to confirm that according to the result, according to as previous The flatness of index, it is difficult to which will there is the substrate for the tendency for being easy to happen focal error to distinguish.
On the other hand, the main table of mask blank substrate of the invention in the substrate with one group of opposite main surface Face is provided in the manufacture of the mask blank of the film of transfer pattern formation and uses, which is characterized in that the substrate is in a master Surface set includes at least the region on one side for the square of the square area of 132mm on the basis of the center of substrate and counts Region is calculated, to the respective setting specific point of four corners in zoning, is risen in all specified points obtained from datum plane Height, setting passes through remaining specified point and hung down by the imaginary planes of three specified points in all specified points, setting Directly in the intersection point of the vertical line of datum plane and imaginary plane, when at a distance from the remaining specified point of calculating is between above-mentioned intersection point, The above-mentioned distance (tilting distance) calculated is less than 0.2 μm.The transfer gone out by the mask blank with this feature with substrate manufacture Focal error is not easily led to mask.In addition, even if in this case, it is highly preferred that the tilting of aforementioned mask blank substrate Distance is at 0.18 μm hereinafter, further preferably 0.15 μm or less.
In the mask blank substrate, in above-mentioned zoning TAIt is interior from datum plane PRIn the height risen, from peak The difference for subtracting minimum is greater than 0.2 μm.That is, about the mask blank substrate, in the zoning T of main surface PAInterior setting Multiple measuring points and obtain each measuring point from datum plane PRWhen the height risen, in zoning TAInterior specified point A, B, C, D and each measuring point from datum plane PRIn the height risen, the difference of minimum is subtracted (with flatness (TIR) from peak Identical index) it is greater than 0.2 μm.In general, mask blank substrate of the difference greater than 0.2 μm is using the substrate manufacture Transfer mask and when being placed in the mask carrying stage of exposure device out, exists and inclines relative to what the tilting of mask carrying stage tended to get bigger To being also easy to happen focal error.In the past, the situation that this mask blank used substrate to select as non-high standard substrate is more. For non-high standard substrate selected in this way, by using the manufacturing method of mask blank substrate of the invention, although right and wrong High standard substrate, it is also possible to which being chosen to be is to be not susceptible to focus mistake when the exposure device using high NA is exposed transfer Substrate accidentally.
In addition, the main surface P of mask blank substrate needs mirror ultrafinish at surface roughness more than regulation.Main surface The r.m.s. roughness Rq of P is preferably 0.25nm or less.The zoning of surface roughness Rq in this case is, for example, on one side For the inside region of 10 μm of square.In addition, such as atomic force microscope (AFM:Atomic can be used in surface roughness Rq Force Microscope) etc. be measured.
[manufacturing method and mask blank of mask blank]
The manufacturing method of mask blank of the invention is characterized in that having by above-mentioned mask blank substrate The process of the film of the main surface setting transfer pattern formation of the mask blank that manufacturing method produces substrate.This hair Bright mask blank another feature is that, above-mentioned mask blank substrate a main surface setting transfer pattern formed Film.
The mask blank and mask blank of the invention that the manufacturing method of mask blank through the invention produces can Using the mask blank of following (1)~(5) mode.
(1) has the binary mask blank for the photomask being made of the material containing transition metal
The binary mask blank on substrate have photomask (film of pattern formation), the photomask by containing chromium, The monomer of the transition metal such as tantalum, ruthenium, tungsten, titanium, hafnium, molybdenum, nickel, vanadium, zirconium, niobium, palladium, rhodium or the material of its compound are constituted.Such as The shading that from chromium or addition is constituted selected from the chromium compound of one or more of the elements such as oxygen, nitrogen, carbon element into chromium can be enumerated Film.In addition, being constituted such as that can enumerate from the tantalum compound for adding one or more of element selected from oxygen, nitrogen, boron element into tantalum Photomask.The photomask of the binary mask blank can be the double-layer structure for preventing layer to constitute by light shield layer and surface reflection, Either further adding backside reflection between light shield layer and substrate prevents the three-decker of layer.Alternatively, it is also possible to being shading Form continuously or periodically different composition of the film on film thickness direction tilts film.
(2) have by the compound containing transition metal and silicon (transition metal silicide especially contains molybdenum silicide) Material constitute light semi-transmissive film phase shift mask blank
As the phase shift mask blank, there is light semi-transmissive film (film of pattern formation) on substrate, can make pair The light semi-transmissive film is patterned and is arranged to the half-tone type phase shift mask of the type of phase shift portion.In the phase shifting mask, it is It prevents from being formed in caused by the light semi-transmissive film pattern of transfer area based on the light through light semi-transmissive film and being transferred substrate Pattern it is bad, the mask of the form on substrate with light semi-transmissive film and photomask (photo-shield strip) thereon can be enumerated.Separately Outside, other than half-tone type phase shift mask blank, it can also enumerate and the substrate that phase shift portion is arranged in substrate is carved by etching etc. Be carved into sharp Vincent (レ ベ Application ソ Application) the type phase shifting mask of type with and enhanced phase shifting mask mask blank.
The light semi-transmissive film is for example by the material containing transition metal and the compound of silicon (containing transition metal silicide) It constitutes, can enumerate using these transition metal and silicon, oxygen and/or nitrogen as the material of main composition element.Transition metal can be used Molybdenum, tantalum, tungsten, titanium, hafnium, nickel, vanadium, zirconium, niobium, palladium, ruthenium, rhodium, chromium etc..In addition, there is the case where photomask in light semi-transmissive film Under, since the material of above-mentioned smooth semi-transmissive film contains transition metal and silicon, the material as photomask is, it is preferable to use phase (have elching resistant) chromium for light semi-transmissive film with etching selectivity is added to the elements such as oxygen, nitrogen, carbon into chromium Chromium compound is constituted.
It is made since sharp Vincent type phase shifting mask is used with the mask blank of binary mask blank same form, figure Case forms the composition with film as the photomask of binary mask blank.The light of the mask blank of enhanced phase shifting mask half Transmission film transmits the light (for example, relative to exposure wavelength 1%~30%) for the intensity not contributed to exposure actually, But the phase difference generated to the exposure light of transmission is small (for example, phase difference is 30 degree hereinafter, preferably 0 degree), this point and half color The light semi-transmissive film of tune type phase shift mask blank is different.The material of the light semi-transmissive film contains and half-tone type phase shift mask blank The identical element of light semi-transmissive film, but the ratio of components of each element and/or film thickness be adjusted to that there is exposure light it is defined Transmissivity and defined small phase difference.
(3) has the phase shift mask blank for the light semi-transmissive film being made of the material of the compound containing silicon
The light semi-transmissive film, in addition to using the material being made of silicon and nitrogen or containing in the material being made of silicon and nitrogen It is recorded with (2) other than material selected from one or more of semimetallic elements, nonmetalloid and rare gas element is formed The relevant description of light semi-transmissive film it is identical.
(4) have by the compound containing transition metal and silicon (transition metal silicide especially contains molybdenum silicide) Material constitute photomask binary mask blank
The photomask (film of pattern formation) is made of the material containing transition metal and the compound of silicon, can be enumerated With these transition metal and silicon and at least one of oxygen or nitrogen, the above are the materials of main composition element.In addition, photomask can Enumerate that the above are the materials of main composition element at least one of transition metal and oxygen, nitrogen, boron.It can make in transition metal With molybdenum, tantalum, tungsten, titanium, hafnium, nickel, vanadium, zirconium, niobium, palladium, ruthenium, rhodium, chromium etc..Photomask is especially formed by the compound of molybdenum silicide In the case where, can be light shield layer (MoSi etc.) and surface reflection prevent the double-layer structure of layer (MoSiON etc.) or be in turn The three-decker of layer (MoSiON etc.) is also prevented between light shield layer and substrate added with backside reflection.Alternatively, it is also possible to being shading Form continuously or periodically different composition of the film on film thickness direction tilts film.
(5) has the binary mask blank for the photomask being made of the material of the compound containing silicon
The photomask using the material being made of silicon and nitrogen or in the material being made of silicon and nitrogen in addition to containing selected from half Other than the material of one or more of metallic element, nonmetalloid and rare gas element is formed, with shading documented by (1) The relevant description of film is the same.
In addition, forming fine pattern in order to which the film thickness of etchant resist to be thinned, can also have etching on photomask and cover Mould film.Preferably, which utilizes the etching for the photomask containing transition metal silicide to have etching selection The material that the chromium or the chromium compound from being added to the elements such as oxygen, nitrogen, carbon into chromium of property are constituted is constituted.At this point, in order to make to etch Mask film has the function of that reflection prevents, and can also make and be transferred with covering in the state of remaining etching mask film on photomask Mould.
In addition, in above-mentioned (1)~(5), it can also be between substrate and photomask or between light semi-transmissive film and photomask The etching barrier film for having elching resistant for photomask and light semi-transmissive film is set.Etching barrier film can also be used and etched Etch barrier film when can simultaneously release etch mask film material.
On the other hand, the manufacturing method of mask blank alternatively, for being formed with transfer on substrate The mask blank of the film of pattern formation, in the surface set zoning T of the filmA, in zoning TAIn four angles Fall portion CA、CB、CC、CDRespective setting specific point A, B, C, D, with identical with the manufacturing method of mask blank substrate above-mentioned Sequence, which calculates, tilts distance, and the substrate for being provided with the film of the tilting distance less than 0.2 μm is chosen to be mask blank.
That is, the manufacturing method of the mask blank of another embodiment is in the substrate with one group of opposite main surface One main surface is provided with the manufacturing method of the mask blank of the film of transfer pattern formation characterized by comprising is setting It is on one side the square of 132mm that the surface set for being equipped with the film of the substrate of film, which includes at least on the basis of the center of substrate, Region, that is, zoning of the square in region, and to the process of the respective setting specific point of four corners of zoning；? The process for the height that all above-mentioned specified points rise obtained from datum plane；Setting is specific by three in all specified points The imaginary plane of point, setting are calculated by remaining specified point and the intersection point of vertical line and imaginary plane perpendicular to datum plane The process of the distance between remaining specified point and above-mentioned intersection point；The distance of calculating is provided with above-mentioned film less than 0.2 μm The substrate process that is chosen to be mask blank.
The uniformity for being formed in film thickness distribution in the face of the film of the transfer pattern formation on substrate is high, and membrane stress also fills Divide and is lower.Therefore, the tilting distance calculated in film setting specific point etc. of transfer pattern formation in the main table of substrate Face setting specific point etc. and the tilting that calculates is small apart from its difference, by the manufacturer by the mask blank of another embodiment The transfer that the selected mask blank of method produces also is not susceptible to focal error with mask.In addition, with another embodiment The manufacture of the manufacturing method of mask blank relevant other item (tilting calculating sequence of distance etc.) and mask blank substrate The case where method, is identical.
Similarly, mask blank alternatively can enumerate mask blank with the following characteristics: in film Surface set zoning TA, in zoning TAIn four corner CA、CB、CC、CDRespective setting specific point A, B, C, D, with above-mentioned mask blank with substrate similarly sequentially calculate tilt apart from when, the tilting distance is less than 0.2 μm.That is, should The mask blank of another embodiment is that a main surface of the substrate with one group of opposite main surface is provided with transfer figure The mask blank of the film of case formation, which is characterized in that mask blank is included at least in the surface set of film with substrate On the basis of center is on one side region, that is, zoning of the square of the square area of 132mm, to four in zoning Respectively setting specific point sets in the height that all specified points rise obtained from datum plane and passes through all spies a corner The imaginary plane of three specified points in fixed point, and set by remaining specified point and perpendicular to the vertical line of datum plane and vacation The intersection point for thinking plane, when at a distance from the remaining specified point of calculating is between intersection point, the distance of calculating is less than 0.2 μm.It is another by this The transfer that the mask blank of one embodiment produces equally is not susceptible to focal error with mask.In addition, with another implementation Mask of the relevant other items (tilting calculating sequence of distance etc.) of the mask blank of mode with above-mentioned another embodiment The case where blank, is identical.
[manufacturing method and transfer mask of transfer mask]
The manufacturing method of transfer of the invention mask is characterised by comprising in the manufacture by above-mentioned mask blank The process of transfer pattern is formed on the film for the mask blank that method produces.In addition, the transfer of the invention feature of mask It is have transfer pattern in the film of above-mentioned mask blank.Hereinafter, to the work for producing transfer mask from mask blank Sequence is illustrated.In addition, mask blank as used herein is the phase shift mask blank of above-mentioned (2), has on substrate successively layer The structure of folded light semi-transmissive film (film of transfer pattern formation) and photomask.In addition, the transfer is with mask (phase shifting mask) Manufacturing method be example, also can change a part of sequence and manufactured.
Firstly, forming etchant resist by spin-coating method etc. on the photomask of phase shift mask blank.The etchant resist it is preferable to use The chemical reinforcing type resist of electron beam exposure description.Then, it for etchant resist, should be formed in by electron beam exposure description The transfer pattern of light semi-transmissive film, and implement development etc. as defined in processing, formed have transfer pattern corrosion-resisting pattern.Then, Photomask is implemented using corrosion-resisting pattern as the dry etching of mask, turning for light semi-transmissive film should be formed in by being formed on photomask It is patterned.After the dry etching, corrosion-resisting pattern is removed.Then, for light semi-transmissive film, implement to have transfer pattern Photomask is the dry etching of mask, and transfer pattern is formed in light semi-transmissive film.Then, it is formed again by spin-coating method etc. anti- Film is lost, the pattern (pattern of photo-shield strip etc.) of photomask should be formed in by describing by electron beam exposure, and the regulation such as implement development Processing, to form corrosion-resisting pattern.For photomask, implement using the corrosion-resisting pattern with patterns such as photo-shield strips as the dry of mask Method etching, forms the patterns such as photo-shield strip on photomask.Then, processing etc. is cleaned as defined in implementing, completes transfer mask (phase Move mask).
[manufacture of semiconductor devices]
The manufacturing method of semiconductor devices of the invention is characterized in that, above-mentioned each transfer is placed in exposure with mask The mask carrying stage of device is transferred etchant resist of the transfer pattern on semiconductor substrate by photoetching process.These transfers are with covering Mould is that the not tilting from chuck surface or tilting are smaller, so being not easy in the mask carrying stage for being placed in exposure device Focal error occurs.Therefore, when being exposed transfer with etchant resist of the mask on semiconductor devices using these transfers, energy It is bad that transfer occurs on enough etchant resists inhibited on the semiconductor device.In addition, using the corrosion-resisting pattern as mask, to being added Work film implement dry etching and in the case where forming circuit pattern, transfer it is bad caused by wiring short circuit and broken string can be eliminated, It is capable of forming the circuit pattern of high-precision and high yield rate.
Embodiment
Hereinafter, further illustrating embodiments of the present invention by embodiment.
(embodiment, comparative example)
[manufacture of mask blank substrate]
Firstly, synthetic quartz glass substrate (size 152.4mm × 152.4mm, thickness 6.35mm) is cut out, to the compound stone The end face of English glass substrate carries out chamfer machining and grinding processing, reuses the lapping liquid containing cerium oxide abrasive grain and slightly grind Mill and fine gtinding.Then, which is placed on the carrier of double-side polishing apparatus, is carried out by condition below Hyperfine abrasive.
Abrasive disk: soft polishing machine (flannelette type)
Lapping liquid: silica gel abrasive grain (average grain diameter 100nm) and water
Tonnage: 50~100g/cm2
Process time: 60 minutes
It after hyperfine abrasive terminates, is impregnated in glass substrate in diluted hydrofluoric acid liquid, carries out removing washing for silica gel abrasive grain Only.Then, the main surface of glass substrate and end face are cleaned, then carries out rotation with pure water and clean, and is revolved Become a cadre dry, is thereby preparing for implementing surface 40 glass substrates 1 of attrition process.For the main surface of this 40 substrates, benefit It is on one side the r.m.s. roughness Rq in the zoning of 10 μm of square, as a result all bases with atomic force microscope measurement It is 0.25nm or less in plate.
Then, for 40 glass substrates 1 prepared in this way, measurement region is set as using the center O of substrate 1 as base respectively Quasi- is the square of 148mm on one side, and measuring point N is set to latticed with 256 points × 256 points in the measurement region, is made Each measuring point is obtained from benchmark with surface-profile measuring instrument UltraFLAT 200M (Corning TROPEL Co. Ltd. system) Plane PRThe height that (least square plane) rises, the i.e. surface shape of main surface P.Then, 40 glass substrates 1 are divided into two groups (each group 20 is opened).
Then, glass substrate 1 is opened for one group 20, the calculating area for the square that the length that one side is set separately is 132mm Domain TA, in zoning TASet four corner CA、CB、CC、CD(with zoning TAShare vertex is 1mm's on one side Square.).Then, it is being located at each corner CA、CB、CC、CDRegion in measuring point N in, will be closest to zoning TA's Each measuring point on vertex is as four specified points A, B, C, D.
For each glass substrate 1, calculate flat by the imagination of three specified points A, B, C in four specified points A, B, C, D Face PI.Then, setting is by remaining specified point D and perpendicular to datum plane PRVertical line, calculate the vertical line and imaginary plane PI Intersection point D1.In turn, remaining specified point D and intersection point D are calculated1The distance between, i.e. tilting distance ZD1.Tilting distance ZD1It is logical Cross calculating vertical line and datum plane PRIntersection point D0With vertical line and imaginary plane PIIntersection point D1The distance between, certainly from specified point D Datum plane PRThe height Z risenDIt subtracts the distance and calculates.
Then, glass substrate 1 is opened for this group 20, carried out to tilt distance ZD1Less than 0.2 μm as selected reference The selected process of mask blank substrate.From the glass substrate 1 for meeting selected reference, by glass substrate A1 (embodiment 1) table Show in Fig. 4, glass substrate A2 (embodiment 2) is indicated in Fig. 5.In addition, from the glass substrate for being unsatisfactory for selected reference, Glass substrate B1 (comparative example 1) is indicated in Fig. 6.(a) in Fig. 4~Fig. 6 is for imaginary plane PIOn the basis of master The contour distribution map of elevation information (surface shape) the main surface P viewed from above of surface P, (b) be diagonal height (solid line is the height distribution in the section for cutting the contour distribution map of (a) with the diagonal line of upper right, dotted line to degree profile figure The height in the section to cut the contour distribution map of (a) with the diagonal line of bottom right is distributed.), (c) be direction in length and breadth height (solid line is by the distribution of the height in the section laterally cut at the center of the contour distribution map of (a), dotted line to profile figure For to pass through the distribution of the height in the longitudinally slit section at the center of the contour distribution map of (a).).
In addition, (a ') in Fig. 4~Fig. 6 is for datum plane (least square plane) PROn the basis of main surface P Elevation information (surface shape) main surface P viewed from above contour distribution map, (b ') is the height point of diagonal (solid line is the height distribution in the section for cutting the contour distribution map of (a ') with the diagonal line of upper right to cloth sectional view, and dotted line is The height distribution in the section that the contour distribution map of (a ') is cut with the diagonal line of bottom right.), (c ') is the height in direction in length and breadth (solid line is by the distribution of the height in the section laterally cut at the center of the contour distribution map of (a '), void to profile figure Line is by the distribution of the height in the longitudinally slit section at the center of the contour distribution map of (a ').).
In addition, the contour of each contour distribution map has the scale of 25nm, each contour distribution map is horizontally and vertically Be surface-profile measuring instrument assign pixel number, (b), (c), (b '), (c ') the longitudinal axis indicate height, unit be μm (subsequent each attached drawing is same.).
The tilting distance Z of glass substrate A1 (embodiment 1)D1Be 0.145 μm, the tilting of glass substrate A2 (embodiment 2) away from From ZD1It is 0.028 μm, meets the selected reference less than 0.2 μm, in contrast, the tilting distance of glass substrate B1 (comparative example 1) ZD1It is 0.480 μm, is substantially more than selected reference.On the other hand, to have used as previous index with datum plane PRFor base Quasi- elevation information flatness (on the basis of the center O of substrate on one side in the inside region of the square of 132mm most The difference of high height and minimum altitude) when investigating, glass substrate A1 (embodiment 1) is 0.289 μm, glass substrate A2 (embodiment 2) It is 0.311 μm, glass substrate B1 (comparative example 1) is 0.279 μm.It is difficult according to the result it is found that according to previous flatness index The substrate for being easy to happen focal error to be excluded from mask blank in substrate.
It utilizes with imaginary plane PIOn the basis of elevation information calculate flatness (one side on the basis of the center O of substrate For the difference of maximum height and minimum altitude in the inside region of the square of 132mm), as a result, glass substrate A1 (embodiment 1) It is 0.362 μm, glass substrate A2 (embodiment 2) is 0.294 μm, and glass substrate B1 (comparative example 1) is 0.439 μm.According to the knot Even fruit is also not easy from mask blank to exclude the substrate for being easy to happen focal error in substrate it is found that the index.
Then, glass substrate 1 is opened for another group 20, the calculating for the square that the length that one side is set separately is 146mm Region TA, and in zoning TASet four corner CA、CB、CC、CD(with zoning TAShared vertex is on one side The square of 1mm.).Then, it is being located at each corner CA、CB、CC、CDRegion in measuring point N in, will closest to calculate area Domain TAVertex each measuring point as four specified points A, B, C, D.Then, according to one group of glass substrate above-mentioned the case where Identical sequence has calculated this another group 20 tilting distance Z for opening glass substrate 1D1。
Glass substrate 1 is opened for this another group 20, carries out that distance Z will be tiltedD1Less than 0.2 μm of mask as selected reference The selected process of blank substrate.From the glass substrate for meeting selected reference, glass substrate A3 (embodiment 3) expression is being schemed In 7, glass substrate A4 (embodiment 4) is indicated in fig. 8.In addition, from the glass substrate for being unsatisfactory for selected reference, by glass Substrate B2 (comparative example 2) is indicated in Fig. 9.
The tilting distance Z of glass substrate A3 (embodiment 3)D1Be 0.047 μm, the tilting of glass substrate A4 (embodiment 4) away from From ZD1It is 0.028 μm, meets the selected reference less than 0.2 μm, in contrast, the tilting distance of glass substrate B2 (comparative example 2) ZD1It is 0.525 μm, is substantially more than selected reference.On the other hand, to have used the datum plane P as previous indexRFor base Quasi- elevation information flatness (on the basis of the center O of substrate on one side in the inside region of the square of 146mm most The difference of high height and minimum altitude) when investigating, glass substrate A3 (embodiment 3) is 0.565 μm, glass substrate A4 (embodiment 4) It is 0.386 μm, glass substrate B2 (comparative example 2) is 0.537 μm.It is difficult according to the result it is found that according to previous flatness index The substrate for being easy to happen focal error to be excluded from mask blank in substrate.
It utilizes with imaginary plane PIOn the basis of elevation information calculate flatness (one side on the basis of the center O of substrate For the difference of maximum height and minimum altitude in the inside region of the square of 146mm), as a result, glass substrate A3 (embodiment 3) It is 0.553 μm, glass substrate A4 (embodiment 4) is 0.339 μm, and glass substrate B2 (comparative example 2) is 0.342 μm.According to the knot Even fruit is also not easy from mask blank to exclude the substrate for being easy to happen focal error in substrate it is found that the index.
[manufacture of mask blank]
Then, (implemented using the mask blank of the various embodiments described above substrate A1 (embodiment 1), A2 (embodiment 2), A3 Example 3), A4 (embodiment 4), produce the half-tone type phase shift mask mask blank of each embodiment respectively in the following sequence.Together Sample, using the substrate B1 (comparative example 1) of each comparative example, B2 (comparative example 2), the half-tone type phase of each comparative example is produced respectively Move mask mask blank.
Specifically, forming the light semi-transmissive film being made of the molybdenum and silicon nitrogenized on each substrate.Specifically, using molybdenum (Mo) with the mixing target (Mo:Si=10mol%:90mol%) of silicon (Si), in argon (Ar), nitrogen (N2) and helium (He) mixing Atmosphere (gas flow ratio Ar:N2: He=5:49:46) under, air pressure is set as 0.3Pa, the power of DC power supply is set as 3.0kW forms the MoSiN film being made of molybdenum, silicon and nitrogen by reactive sputtering (DC sputtering) with the film thickness of 69nm.Then, right In the glass substrate 1 for being formed with above-mentioned MoSiN film, using heating furnace, heating temperature is set as 450 DEG C in an atmosphere, will be heated Time is set as 1 hour, is heated.Here, the transmissivity of the MoSiN film under ArF excimer laser is 6.16%, phase Potential difference is 184.4 degree.
Then, photomask is formed in above-mentioned smooth semi-transmissive film.Specifically, sputtering target material uses chromium (Cr) target, if Determine argon (Ar), carbon dioxide (CO2), nitrogen (N2), mixed gas atmosphere (the air pressure 0.2Pa, gas flow ratio Ar:CO of helium (He)2: N2: He=20:35:10:30), the power of DC power supply is set as 1.7kW, film thickness is formed by reactive sputtering (DC sputtering) The CrOCN layer of 30nm.Then, setting argon (Ar) and nitrogen (N2) mixed gas atmosphere (air pressure 0.1Pa, gas flow ratio Ar:N2 =25:5), the power of DC power supply is set as 1.7kW, forms the CrN layer of film thickness 4nm by reactive sputtering (DC sputtering).Most Afterwards, argon (Ar), carbon dioxide (CO are set2), nitrogen (N2), mixed gas atmosphere (air pressure 0.2Pa, the gas flow ratio of helium (He) Ar:CO2: N2: He=20:35:5:30), the power of DC power supply is set as 1.7kW, film is formed by reactive sputtering (DC sputtering) The CrOCN layer of thick 14nm forms the chromium system photomask for 3 multilayer laminated structures that total film thickness is 48nm.Then, implement 15 with 280 DEG C The heat treatment of minute, membrane stress is reduced to close to 0, each mask blank of embodiment 1,2,3,4 and Comparative Examples 1 and 2 is obtained.
[manufacture that mask is used in transfer]
Then, pattern is carried out for the film on each mask blank of embodiment 1,2,3,4 and Comparative Examples 1 and 2 to be formed, make Produce half-tone type phase shift mask (transfer mask).About the manufacturing process of transfer mask, with above-mentioned [the transfer system of mask Make method and transfer mask] in record method it is identical, so omitting the description.
[evaluation of exposure transfer performance]
Each half-tone type phase shifting mask of embodiment 1,2,3,4 and Comparative Examples 1 and 2 for the sequentially built more than passing through, Using AIMS193 (Carl Zeiss Co. Ltd. system) using wavelength 193nm exposure light high NA (immersion exposure) exposure Under the conditions of light, transfer picture when having carried out exposure transfer to the etchant resist on chip is simulated.To the exposure transferred image of simulation into Verifying is gone, as a result, in the case where each half-tone type phase shifting mask of embodiment 1,2,3,4, expose the resolution of transferred image Power is high, in addition, also not finding is considered as missing of pattern caused by focal error etc..It is able to confirm that according to these results, even if By the half-tone type phase shift mask of embodiment 1,2,3,4 be placed in exposure device mask carrying stage and to the etchant resist on chip into Row exposure transfer, will not occur focal error.
In contrast, in the case where each half-tone type phase shifting mask of Comparative Examples 1 and 2, have in exposure transferred image The low region of resolving power, and have found largely be considered as missing of pattern caused by focal error etc..According to these result energy The half-tone type phase shift mask of Comparative Examples 1 and 2 is being placed in the mask carrying stage of exposure device and to anti-on chip by enough confirmations In the case that erosion film is exposed transfer, a possibility that focal error occurs, is high.
The structure that additionally, this invention is not limited to illustrate in the above-described embodiment, in addition, present inventive concept can not departed from In the range of carry out various modifications and changes.
Symbol description
1 ... substrate, CA CB CC CD... corner, A B C D ... specified point, the center of O ... substrate, N ... measuring point, P ... main surface, PI... imaginary plane, PR... datum plane

Claims (24)

1. a kind of manufacturing method of mask blank substrate, the mask blank is used for substrate with one group of opposite main table One main surface of the substrate in face is provided with the manufacture of the mask blank of the film of transfer pattern formation, which is characterized in that packet It includes:
For a main surface of the substrate, setup algorithm region, and respectively to four corners in the zoning The process of setting specific point, wherein the zoning is to include at least to be on one side on the basis of the center of the substrate The region of the square of the square area of 132mm；
In the process for the height that all specified points rise obtained from datum plane；
Setting passes through the imaginary plane of three specified points in all specified points, and sets and pass through remaining specified point And perpendicular to the intersection point of the vertical line of the datum plane and the imaginary plane, the remaining specified point and the intersection point are calculated The distance between process；
The process for substrate of the distance less than 0.2 μm will be calculated being chosen to be mask blank substrate.
2. the manufacturing method of mask blank substrate as described in claim 1, which is characterized in that
The zoning is identical or than it for the square area of 146mm on one side as on the basis of the center of the substrate Small region.
3. the manufacturing method of mask blank substrate as claimed in claim 1 or 2, which is characterized in that
Set in the zoning of a main surface of the substrate multiple measuring points and obtain the measuring point from When the height that the datum plane rises, the specified point and the measuring point in the zoning it is flat from the benchmark In the height that face is risen, the difference for subtracting minimum from peak is greater than 0.2 μm.
4. the manufacturing method of mask blank substrate according to any one of claims 1 to 3, which is characterized in that
The datum plane are as follows: set multiple measuring points in the zoning of a main surface of the substrate, be based on Institute obtained from being measured using surface-profile measuring instrument using the reference plane of the surface-profile measuring instrument as benchmark The elevation information for stating measuring point, the least square plane, that is, datum plane being fitted by least square method.
5. the manufacturing method of mask blank substrate as described in any one of claims 1 to 4, which is characterized in that
The r.m.s. roughness Rq of one main surface is 0.25nm or less.
6. a kind of manufacturing method of mask blank, which is characterized in that
Including the mask produced in the manufacturing method by mask blank according to any one of claims 1 to 5 substrate The process that the film of the transfer pattern formation is arranged in one main surface of blank substrate.
7. a kind of manufacturing method of mask blank is provided in a main surface of the substrate with one group of opposite main surface and turns It is patterned the film to be formed, the manufacturing method is characterised by comprising:
For being provided with the surface of the film of the substrate of the film, setup algorithm region, and in the zoning The respective setting specific point of four corners process, wherein the zoning is included at least with the center of the substrate On the basis of on one side for 132mm square area square region；
In the process for the height that all specified points rise obtained from datum plane；
Setting passes through the imaginary plane of three specified points in all specified points, and sets and pass through remaining specified point And perpendicular to the intersection point of the vertical line of the datum plane and the imaginary plane, the remaining specified point and the intersection point are calculated The distance between process；
The process for the substrate that is provided with the film of the distance less than 0.2 μm will be calculated being chosen to be mask blank.
8. the manufacturing method of mask blank as claimed in claim 7, which is characterized in that
The zoning is identical or than it for the square area of 146mm on one side as on the basis of the center of the substrate Small region.
9. the manufacturing method of mask blank as claimed in claim 7 or 8, which is characterized in that
Set in the zoning on the surface of the film multiple measuring points and obtain the measuring point from the base When the height that directrix plane rises, in the specified point and the measuring point in the zoning from the datum plane Height in, from peak subtract minimum difference be greater than 0.2 μm.
10. the manufacturing method of the mask blank as described in any one of claim 7~9, which is characterized in that
The datum plane are as follows: multiple measuring points are set in the zoning of the main surface of the film, based on utilization The survey obtained from surface-profile measuring instrument measurement using the reference plane of the surface-profile measuring instrument as benchmark The elevation information of fixed point, the least square plane, that is, datum plane being fitted by least square method.
11. the manufacturing method that mask is used in a kind of transfer, which is characterized in that
Including the mask blank that is produced in the manufacturing method by mask blank described in any one of claim 6~10 The process of transfer pattern is formed on the film.
12. a kind of mask blank substrate, the mask blank is used for substrate in the substrate with one group of opposite main surface A main surface be provided with transfer pattern formation film mask blank manufacture, which is characterized in that
The substrate one main surface setting include at least by the center of the substrate on the basis of on one side for 132mm's Region, that is, zoning of the square of square area, and four corners in the zoning are respectively set specific Point, in the height that all specified points rise obtained from datum plane, setting passes through three in all specified points The imaginary plane of specified point, and set by remaining specified point and perpendicular to the vertical line of the datum plane and the imagination The intersection point of plane, when calculating the distance between the remaining specified point and the intersection point, the distance of calculating is less than 0.2 μ m。
13. mask blank substrate as claimed in claim 12, which is characterized in that
The zoning is identical or than it for the square area of 146mm on one side as on the basis of the center of the substrate Small region.
14. mask blank substrate as described in claim 12 or 13, which is characterized in that
Set in the zoning of a main surface of the substrate multiple measuring points and obtain the measuring point from When the height that the datum plane rises, the specified point and the measuring point in the zoning from the datum plane In the height risen, the difference for subtracting minimum from peak is greater than 0.2 μm.
15. the mask blank substrate as described in any one of claim 12~14, which is characterized in that
The datum plane are as follows: set multiple measuring points in the zoning of a main surface of the substrate, be based on Institute obtained from being measured using surface-profile measuring instrument using the reference plane of the surface-profile measuring instrument as benchmark The elevation information for stating measuring point, the least square plane, that is, datum plane being fitted by least square method.
16. the mask blank substrate as described in any one of claim 12~15, which is characterized in that
The r.m.s. roughness Rq of one main surface is 0.25nm or less.
17. a kind of mask blank, which is characterized in that
One main surface of mask blank substrate described in any one of claim 12~16 has the transfer The film of pattern formation.
18. a kind of mask blank is provided with transfer pattern shape in a main surface of the substrate with one group of opposite main surface At film, which is characterized in that
The mask blank includes at least on the basis of the center of the substrate surface set of the film Region, that is, zoning of the square of the square area of 132mm, and respectively to four corners in the zoning Setting specific point, in the height that all specified points rise obtained from datum plane, setting passes through all specified points In three specified points imaginary plane, and set by remaining specified point and perpendicular to the vertical line of the datum plane with The intersection point of the imaginary plane, when calculating the distance between the remaining specified point and the intersection point, the distance of calculating Less than 0.2 μm.
19. mask blank as claimed in claim 18, which is characterized in that
The zoning is identical or than it for the square area of 146mm on one side as on the basis of the center of the substrate Small region.
20. the mask blank as described in claim 18 or 19, which is characterized in that
Set in the zoning on the surface of the film multiple measuring points and obtain the measuring point from the base When the height that directrix plane rises, the specified point and the measuring point in the zoning from the datum plane In height, the difference for subtracting minimum from peak is greater than 0.2 μm.
21. the mask blank as described in any one of claim 18~20, which is characterized in that
The datum plane are as follows: multiple measuring points are set in the zoning of the main surface of the film, based on utilization The survey obtained from surface-profile measuring instrument measurement using the reference plane of the surface-profile measuring instrument as benchmark The elevation information of fixed point, the least square plane, that is, datum plane being fitted by least square method.
22. a kind of transfer mask, which is characterized in that
The film of mask blank described in any one of claim 17~21 is provided with transfer pattern.
23. a kind of manufacturing method of semiconductor devices, which is characterized in that
The transfer produced by the manufacturing method of the mask of the transfer described in claim 11 is placed in exposure dress with mask The transfer pattern of transfer mask is transferred on semiconductor substrate by the mask carrying stage set by photoetching process.
24. a kind of manufacturing method of semiconductor devices, which is characterized in that
Transfer described in claim 22 is placed in the mask carrying stage of exposure device with mask, by photoetching process by the transfer It is transferred on semiconductor substrate with the transfer pattern of mask.
CN201780039527.7A 2016-07-27 2017-07-10 Substrate for mask blank, transfer mask, method for manufacturing the same, and method for manufacturing semiconductor device Active CN109463000B (en)

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