CN109449743A - A kind of solid state laser and semiconductor laser light combination beam system - Google Patents
A kind of solid state laser and semiconductor laser light combination beam system Download PDFInfo
- Publication number
- CN109449743A CN109449743A CN201811235762.4A CN201811235762A CN109449743A CN 109449743 A CN109449743 A CN 109449743A CN 201811235762 A CN201811235762 A CN 201811235762A CN 109449743 A CN109449743 A CN 109449743A
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- CN
- China
- Prior art keywords
- reflecting optics
- solid state
- semiconductor laser
- light
- laser
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2375—Hybrid lasers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2383—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
Abstract
The invention discloses a kind of solid state lasers and semiconductor laser light combination beam system, including solid state laser, semiconductor laser, it aims at light 1 and aims at light 2, focusing lens 1 are connected on the solid state laser, optical fiber 1 is connected on focusing lens 1, collimator 1 is connected on the optical fiber 1, reflecting optics 1 are connected in the collimator 1, focusing lens 2 are connected on the reflecting optics 1, optical fiber 3 is connected on focusing lens 2, optical fiber 2 is connected on the semiconductor laser, collimator 2 is connected on optical fiber 2, reflecting optics 2 are connected in collimator 2, reflecting optics 2 are connect with reflecting optics 1, reflecting optics 3 are connected on the aiming light 1, reflecting optics 3 are connect with reflecting optics 2, reflecting optics 4 are connected on the aiming light 2, reflecting optics 4 are connect with reflecting optics 3.The present invention is not limited by a space, suitable for the equipment of spaces compact.
Description
Technical field
The present invention relates to field of laser device technology more particularly to a kind of solid state laser and semiconductor laser light combination beam systems
System.
Background technique
Laser refers to the device that can emit laser, First maser has been made within 1954, has obtained height
The relevant microbeam of degree, A.L. Xiao Luo and C.H. soup this maser principle promotes the use of optical frequency model within 1958
It encloses, nineteen sixty T.H. plum is graceful et al. has been made first ruby laser, and He-Ne Lasers has been made in A. Jia Wen in 1961 et al.
Device.R.N. Hall in 1962 et al. has formulated gallium arsenide semiconductor laser, after, the type of laser is just more and more, presses
Working media point, laser can be divided into gas laser, 4 major class of solid state laser, semiconductor laser and dye laser, closely
Have been developed free electron laser, high power laser is usually all pulsed output, but existing laser makes
It used time, is limited by space larger, can not meet the use demand of people.
Summary of the invention
Technical problems based on background technology, the invention proposes a kind of solid state lasers and semiconductor laser to close
Beam system.
A kind of solid state laser proposed by the present invention and semiconductor laser light combination beam system, including solid state laser, half
Conductor laser aims at light 1 and aims at light 2, is connected with focusing lens 1 on the solid state laser, is connected on focusing lens 1
Optical fiber 1 is connected with collimator 1 on the optical fiber 1, reflecting optics 1 is connected in the collimator 1, are connected on the reflecting optics 1
Focusing lens 2 are connected to, optical fiber 3 is connected on focusing lens 2, optical fiber 2 is connected on the semiconductor laser, is connected on optical fiber 2
It is connected to collimator 2, reflecting optics 2 are connected in collimator 2, reflecting optics 2 are connect with reflecting optics 1, are connected on the aiming light 1
Reflecting optics 3 are connected to, reflecting optics 3 are connect with reflecting optics 2, are connected with reflecting optics 4, reflecting optics 4 on the aiming light 2
It is connect with reflecting optics 3.
Preferably, the aiming light 1 is 532nm laser, and power is less than 5mW.
Preferably, the aiming light 2 is 632nm laser, and power is less than 5mW.
Preferably, the reflecting optics 4 on be coated with 45 ° of 632nm laser and be all-trans film.
Preferably, the side of the reflecting optics 3 is 45 ° of the 532nm film 632nm anti-reflection films that are all-trans, other side 632nm
Anti-reflection film.
Preferably, the side of the reflecting optics 2 is 45 ° of semiconductor laser wavelength, be all-trans film and to aim at light anti-reflection
Film, the other side are to aim at light anti-reflection film.
Preferably, the side of the reflecting optics 1 is 45 ° of be all-trans film and semiconductor laser wavelengths of Solid State Laser wavelength
With 532nm-632nm anti-reflection film, the other side is semiconductor laser wavelength and 532nm-632nm anti-reflection film.
The beneficial effects of the present invention are: due to having optical fiber collimator in every optical path all the way, so light combination beam system can not
It is limited, is relatively specific in the equipment of spaces compact by space, the present invention is not limited by a space, the equipment suitable for spaces compact
In.
Detailed description of the invention
Fig. 1 is a kind of block diagram of solid state laser and semiconductor laser light combination beam system proposed by the present invention.
Specific embodiment
Combined with specific embodiments below the present invention is made further to explain.
Embodiment
With reference to Fig. 1, a kind of solid state laser and semiconductor laser light combination beam system are proposed in the present embodiment, including solid
Body laser, semiconductor laser aim at light 1 and aim at light 2, are connected with focusing lens 1, focusing lens 1 on solid state laser
On be connected with optical fiber 1, collimator 1 is connected on optical fiber 1, reflecting optics 1 are connected in collimator 1, are connected on reflecting optics 1
Focusing lens 2 are connected with optical fiber 3 on focusing lens 2, optical fiber 2 are connected on semiconductor laser, collimation is connected on optical fiber 2
Device 2 is connected with reflecting optics 2 in collimator 2, and reflecting optics 2 are connect with reflecting optics 1, aims at and is connected with reflecting optics on light 1
3, reflecting optics 3 are connect with reflecting optics 2, are aimed at and are connected with reflecting optics 4 on light 2, and reflecting optics 4 are connect with reflecting optics 3,
Due to having optical fiber collimator in every optical path all the way, so light combination beam system can be not limited by a space, it is tight to be relatively specific for space
In the equipment gathered, the present invention is not limited by a space, suitable for the equipment of spaces compact.
In the present embodiment, aiming light 1 is 532nm laser, and power is less than 5mW, and aiming light 2 is 632nm laser, and power is less than
5mW is coated with 45 ° of 632nm laser on reflecting optics 4 and is all-trans film, and the side of reflecting optics 3 is 45 ° of the 532nm film 632nm that are all-trans
Anti-reflection film, the other side are 632nm anti-reflection film, and the sides of reflecting optics 2 is 45 ° of semiconductor laser wavelength, is all-trans and film and takes aim at
Quasi-optical anti-reflection film, the other side are to aim at light anti-reflection film, the sides of reflecting optics 1 be 45 ° of Solid State Laser wavelength be all-trans film and
Semiconductor laser wavelength and 532nm-632nm anti-reflection film, the other side be semiconductor laser wavelength and 532nm-632nm anti-reflection film,
Due to having optical fiber collimator in every optical path all the way, so light combination beam system can be not limited by a space, it is tight to be relatively specific for space
In the equipment gathered, the present invention is not limited by a space, suitable for the equipment of spaces compact.
In the present embodiment, solid state laser laser passes through focus lamp 1, and beam shaping is exported after focusing by focusing lens 1
To optical fiber 1, using reflecting optics 1 are passed through after the reduction of 1 light beam of collimator, then by optical fiber 3 after the focusing of focusing lens 2
Output, semiconductor laser are exported by optical fiber 2, are all-trans after the reduction of 2 light beam of collimator by reflecting optics 2, using
Reflecting optics 1 reach focusing lens 2, are exported after the focusing of focusing lens 2 by optical fiber 3, aim at light 1 and pass through reflecting optics 3
After total reflection, by reflecting optics 2, reflecting optics 1 reach focusing lens 2, pass through optical fiber 3 after the focusing of focusing lens 2
Output aims at light 2 after the total reflection of reflecting optics 4, and by reflecting optics 3, by reflecting optics 2, reflecting optics 1 are arrived
Up to focusing lens 2, is exported after the focusing of focusing lens 2 by optical fiber 3, solid state laser laser can be exported simultaneously and partly led
Volumetric laser, can also alternately to export a kind of laser, two kinds of aimings light can be suitable in vivo and in vitro not with flexible choice for output
Same environment.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (7)
1. a kind of solid state laser and semiconductor laser light combination beam system, including solid state laser, semiconductor laser, aiming
Light 1 and aiming light 2, which is characterized in that be connected with focusing lens 1 on the solid state laser, be connected with optical fiber on focusing lens 1
1, collimator 1 is connected on the optical fiber 1, and reflecting optics 1 are connected in the collimator 1, are connected on the reflecting optics 1
Focusing lens 2 are connected with optical fiber 3 on focusing lens 2, optical fiber 2 are connected on the semiconductor laser, is connected on optical fiber 2
Collimator 2 is connected with reflecting optics 2 in collimator 2, and reflecting optics 2 are connect with reflecting optics 1, are connected on the aiming light 1
Reflecting optics 3, reflecting optics 3 are connect with reflecting optics 2, are connected with reflecting optics 4 on the aiming light 2, reflecting optics 4 and anti-
Penetrate the connection of eyeglass 3.
2. a kind of solid state laser according to claim 1 and semiconductor laser light combination beam system, which is characterized in that institute
Stating and aiming at light 1 is 532nm laser, and power is less than 5mW.
3. a kind of solid state laser according to claim 1 and semiconductor laser light combination beam system, which is characterized in that institute
Stating and aiming at light 2 is 632nm laser, and power is less than 5mW.
4. a kind of solid state laser according to claim 1 and semiconductor laser light combination beam system, which is characterized in that institute
State reflecting optics 4 on be coated with 45 ° of 632nm laser and be all-trans film.
5. a kind of solid state laser according to claim 1 and semiconductor laser light combination beam system, which is characterized in that institute
The side for stating reflecting optics 3 is 45 ° of the 532nm film 632nm anti-reflection films that are all-trans, and the other side is 632nm anti-reflection film.
6. a kind of solid state laser according to claim 1 and semiconductor laser light combination beam system, which is characterized in that institute
The side for stating reflecting optics 2 is 45 ° of semiconductor laser wavelength, be all-trans film and aiming light anti-reflection film, and the other side is to aim at light
Anti-reflection film.
7. a kind of solid state laser according to claim 1 and semiconductor laser light combination beam system, which is characterized in that institute
State reflecting optics 1 side be 45 ° of Solid State Laser wavelength be all-trans film and semiconductor laser wavelength and 532nm-632nm it is anti-reflection
Film, the other side are semiconductor laser wavelength and 532nm-632nm anti-reflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811235762.4A CN109449743A (en) | 2018-10-24 | 2018-10-24 | A kind of solid state laser and semiconductor laser light combination beam system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811235762.4A CN109449743A (en) | 2018-10-24 | 2018-10-24 | A kind of solid state laser and semiconductor laser light combination beam system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109449743A true CN109449743A (en) | 2019-03-08 |
Family
ID=65548270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811235762.4A Pending CN109449743A (en) | 2018-10-24 | 2018-10-24 | A kind of solid state laser and semiconductor laser light combination beam system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109449743A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102553086A (en) * | 2012-01-18 | 2012-07-11 | 苏州生物医学工程技术研究所 | Dual-wavelength laser treatment device |
| CN103401136A (en) * | 2013-07-29 | 2013-11-20 | 武汉锐科光纤激光器技术有限责任公司 | Optical fiber fixing device coupled with high-power semiconductor laser |
| CN103887710A (en) * | 2014-03-04 | 2014-06-25 | 维林光电(苏州)有限公司 | Laser multi-beam combining device and method thereof |
| CN106033865A (en) * | 2015-03-13 | 2016-10-19 | 福州高意光学有限公司 | Semiconductor laser and semiconductor laser beam-combining structure |
-
2018
- 2018-10-24 CN CN201811235762.4A patent/CN109449743A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102553086A (en) * | 2012-01-18 | 2012-07-11 | 苏州生物医学工程技术研究所 | Dual-wavelength laser treatment device |
| CN103401136A (en) * | 2013-07-29 | 2013-11-20 | 武汉锐科光纤激光器技术有限责任公司 | Optical fiber fixing device coupled with high-power semiconductor laser |
| CN103887710A (en) * | 2014-03-04 | 2014-06-25 | 维林光电(苏州)有限公司 | Laser multi-beam combining device and method thereof |
| CN106033865A (en) * | 2015-03-13 | 2016-10-19 | 福州高意光学有限公司 | Semiconductor laser and semiconductor laser beam-combining structure |
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Application publication date: 20190308 |
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| RJ01 | Rejection of invention patent application after publication |