CN109449157A - Electrostatic discharge protection circuit and manufacturing method, electrostatic protection module and liquid crystal display device - Google Patents
Electrostatic discharge protection circuit and manufacturing method, electrostatic protection module and liquid crystal display device Download PDFInfo
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- CN109449157A CN109449157A CN201910077831.1A CN201910077831A CN109449157A CN 109449157 A CN109449157 A CN 109449157A CN 201910077831 A CN201910077831 A CN 201910077831A CN 109449157 A CN109449157 A CN 109449157A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 60
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 16
- 238000000059 patterning Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 10
- 230000005611 electricity Effects 0.000 description 5
- 230000003068 static effect Effects 0.000 description 3
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 2
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention proposes a kind of electrostatic discharge protection circuit, is related to field of liquid crystal display, including N number of thin film transistor (TFT), and the thin film transistor (TFT) successively includes: the first metal layer, including first grid and the first source-drain electrode from the bottom up；Gate insulating layer is equipped with the first aperture；Semiconductor layer；Etch-protecting layer is equipped with the second aperture；Second metal layer, including the second source-drain electrode and second grid；It wherein, is preceding channel close to the side of first grid in one section of semiconductor layer corresponding with first grid, the side of close second grid is back channel in one section of semiconductor layer corresponding with second grid；When positive, semiconductor carries on the back channel conduction, and charge circulates from the second source-drain electrode toward the first source and drain extreme direction；When reversed, channel conduction before semiconductor, charge circulates from the first source-drain electrode toward the second source and drain extreme direction.The electrostatic discharge protection circuit is acted in etching type protection type thin film transistor (TFT) using top-gated and bottom gate, and double diode connection is realized on stereo directional.
Description
Technical field
The invention belongs to field of liquid crystal display, and in particular to a kind of electrostatic discharge protection circuit, electrostatic protection module and liquid crystal
Showing device.
Background technique
Various buildup of static electricity phenomenons can be generated, in liquid crystal display manufacturing process in order to avoid buildup of static electricity pair
The influence of panel generally can all design electrostatic discharge protection circuit to discharge sharing charge, avoid charge after the accumulation of a certain position
It generates high potential and damages panel.
It is a kind of common electrostatic discharge protection circuit design shown in Fig. 1, i.e., setting two is identical between two electrode wires
With the thin film transistor (TFT) that diode fashion connects, first film transistor 01 is responsible for for charge on second electrode line 04 being shared with the
One electrode wires 03, the second thin film transistor (TFT) 02 are then responsible for the charge share on first electrode line 03 to second electrode line 04, such as
This analogizes, all electrode wires of entire panel can electrostatic discharge protection circuit in this way link together, to avoid electricity
Lotus is excessive in small range accumulation and generates damage by static electricity phenomenon.
It is the domain schematic diagram of electrostatic discharge protection circuit shown in FIG. 1 as shown in Figure 2 a, thin film transistor (TFT) therein is to be based on
The thin film transistor (TFT) of traditional etching protection type structure, since there are two thin film transistor (TFT)s to form for the electrostatic discharge protection circuit, this is quiet
Domain Spatial General 6 R where electric protection circuit is bigger, and 01 is first film transistor, and 02 is the second thin film transistor (TFT), and 03 is
First electrode line, 04 is second electrode line.
Fig. 2 b is the schematic diagram of the section structure of first film transistor 01, and the structure of first film transistor T1 includes TFT
20 two parts of area are connected in area 10 and via hole, the area TFT 10 using traditional bottom grating structure, be successively from the bottom up grid 01,
Gate insulating layer 02, semiconductor layer 03, etch-protecting layer 04 and metal layer 05.Wherein metal layer includes drain electrode 051 and 052,
Grid 01 and source electrode 052 are connected by open-celled structure 21 for via hole conducting area 20.The thin film transistor (TFT) of this spline structure necessarily causes
Need biggish domain space.
It equally, is typically also thin by two in circuit layout design for other kinds of electrostatic discharge protection circuit
Film transistor separates, therefore is required to biggish domain space, is not suitable for being applied in the display design of super-resolution degree.
Summary of the invention
The present invention provides a kind of electrostatic discharge protection circuit, and this electrostatic discharge protection circuit also has while reducing domain space
Effective protection effect.
Technical scheme is as follows:
The invention discloses a kind of electrostatic discharge protection circuit, including N number of thin film transistor (TFT), N is the integer greater than 1；N number of film crystal
Sequentially connection is arranged between first electrode line and second electrode line pipe；The thin film transistor (TFT) successively includes: from the bottom up
The first metal layer, including first grid and the first source-drain electrode being connect with first grid；
Gate insulating layer, covers the first metal layer, and the gate insulating layer is equipped with the first aperture being located on the first source-drain electrode；
Semiconductor layer is located on gate insulating layer, and the semiconductor layer is contacted by the first aperture with the first source-drain electrode；
Etch-protecting layer, covers semiconductor layer, and the etch-protecting layer is equipped with the second aperture being located on first grid；
Second metal layer, cover etch-protecting layer, the second metal layer include cover the second aperture the second source-drain electrode and
The second grid being connect with second source-drain electrode；
It wherein, is preceding channel close to the side of first grid in one section of semiconductor layer corresponding with first grid, with second grid
The side of close second grid is back channel in corresponding one section of semiconductor layer；
When positive, semiconductor carries on the back channel conduction, and charge circulates from the second source-drain electrode toward the first source and drain extreme direction；When reversed, partly lead
Channel conduction before body, charge circulate from the first source-drain electrode toward the second source and drain extreme direction.
The invention also discloses a kind of manufacturing methods of electrostatic discharge protection circuit, comprising the following steps:
S1: deposition the first metal layer carries out patterning to the first metal layer and forms first grid and connect with first grid
First source-drain electrode；
S2: the gate insulating layer of covering the first metal layer is formed, the gate insulating layer is performed etching to be formed positioned at the first source
The first aperture in drain electrode；
S3: forming the semiconductor being located on gate insulating layer, and the semiconductor layer is contacted by the first aperture with the first source-drain electrode；
S4: the etch-protecting layer of covering semiconductor layer is formed, etch-protecting layer is performed etching to be formed above first grid
The second aperture；
S5: forming the second metal layer of covering etch-protecting layer, carries out patterning to second metal layer and forms the second aperture of covering
The second source-drain electrode and the second grid that is connect with second source-drain electrode, the second grid be located at the upper of the first source-drain electrode
Side.
The invention also discloses a kind of electrostatic protection modules, are connected in series including multiple above-mentioned electrostatic discharge protection circuits.
The invention also discloses a kind of liquid crystal display device, including neighboring area and display area, neighboring area is equipped with upper
The electrostatic protection module stated, the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed.
The invention also discloses a kind of electrostatic discharge protection circuit, including N number of thin film transistor (TFT), N is the integer greater than 1；It is N number of thin
Film transistor, which sequentially connects, to be arranged between first electrode line and second electrode line；The thin film transistor (TFT) successively wraps from the bottom up
It includes:
Metal light shield layer includes first grid and the first source-drain electrode for connecting with the first grid；
Buffer layer, covers metal light shield layer, and the buffer layer is equipped with the first aperture being located on the first source-drain electrode；
Semiconductor layer is located on buffer layer, and the semiconductor layer is contacted by the first aperture with the first source-drain electrode；
Gate insulating layer, covers semiconductor layer, and the gate insulating layer is equipped with the second aperture being located on first grid；
Metal layer, covers gate insulating layer, and the metal layer includes covering the second source-drain electrode of the second aperture and with described the
The second grid of two source-drain electrodes connection；
It wherein, is preceding channel close to the side of first grid in one section of semiconductor layer corresponding with first grid, with second grid
The side of close second grid is back channel in corresponding one section of semiconductor layer；
When positive, semiconductor carries on the back channel conduction, and charge circulates from the second source-drain electrode toward the first source and drain extreme direction；When reversed, partly lead
Channel conduction before body, charge circulate from the first source-drain electrode toward the second source and drain extreme direction.
The invention also discloses a kind of manufacturing methods of electrostatic discharge protection circuit, comprising the following steps:
S1: deposited metal light shield layer carries out patterning to metal light shield layer and forms first grid and connect with first grid
First source-drain electrode；
S2: the buffer layer of covering metal light shield layer is formed, the buffer layer is performed etching to be formed on the first source-drain electrode
First aperture；
S3: forming the semiconductor being located on buffer layer, and the semiconductor layer is contacted by the first aperture with the first source-drain electrode；
S4: the gate insulating layer of covering semiconductor layer is formed, the gate insulating layer is performed etching to be formed positioned at first grid
On the second aperture；
S5: forming the metal layer of covering gate insulating layer, carries out the second source that patterning forms the second aperture of covering to metal layer
Drain electrode and the second grid being connect with second source-drain electrode.
The invention also discloses a kind of electrostatic protection modules, are connected in series including multiple above-mentioned electrostatic discharge protection circuits.
The invention also discloses a kind of liquid crystal display device, including neighboring area and display area, neighboring area is equipped with upper
The electrostatic protection module stated, the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed.
Technical solution provided by the invention has the advantages that
Electrostatic discharge protection circuit of the invention is acted in etching type protection type thin film transistor (TFT) using top-gated and bottom gate, by grid
Aperture is arranged in buffer layer in pole insulating layer, so that grid and semiconductor layer directly contact, double two are realized on stereo directional
Pole pipe connection, when positive, semiconductor carries on the back channel conduction, and charge circulates from the second source-drain electrode toward the first source and drain extreme direction；When reversed,
Channel conduction before semiconductor, charge circulate from the first source-drain electrode toward the second source and drain extreme direction.
Detailed description of the invention
Below by clearly understandable mode, preferred embodiment is described with reference to the drawings, the present invention is given furtherly
It is bright.
Fig. 1 is the equivalent circuit diagram of electrostatic discharge protection circuit in the prior art；
Fig. 2 a is electrostatic discharge protection circuit schematic diagram in the prior art；
Fig. 2 b is the diagrammatic cross-section of electrostatic discharge protection circuit in the prior art；
Fig. 3 is the schematic diagram of electrostatic discharge protection circuit embodiment one of the present invention；
Fig. 4 is the domain schematic diagram of electrostatic discharge protection circuit of the present invention；
Fig. 5 is the schematic diagram of electrostatic discharge protection circuit embodiment two of the present invention.
Specific embodiment
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, Detailed description of the invention will be compareed below
A specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, and obtain other embodiments.
To make simplified form, part related to the present invention is only schematically shown in each figure, they are not represented
Its practical structures as product.In addition, there is identical structure or function in some figures so that simplified form is easy to understand
Component only symbolically depicts one of those, or has only marked one of those.Herein, "one" is not only indicated
" only this ", can also indicate the situation of " more than one ".
Technical solution of the present invention is discussed in detail with specific embodiment below.
The present invention provides a kind of electrostatic discharge protection circuit, including N number of thin film transistor (TFT), and N is the integer greater than 1；N number of film is brilliant
Body pipe, which sequentially connects, to be arranged between first electrode line and second electrode line.
Fig. 3 is the schematic diagram of electrostatic discharge protection circuit embodiment one of the present invention, as shown, the thin film transistor (TFT) is a kind of
Etch stopper type structure, successively includes: the first metal layer 01 from the bottom up, including first grid 011 and with first grid 011
First source-drain electrode 012 of connection；Gate insulating layer 02 covers the first metal layer 01, and the gate insulating layer 02, which is equipped with, is located at the
First aperture 021 on one source-drain electrode 012；Semiconductor layer 03 is located on gate insulating layer 02, and the semiconductor layer 03 passes through first
Aperture 021 is contacted with the first source-drain electrode 012；Etch-protecting layer 04, covers semiconductor layer 03, and the etch-protecting layer 04 is equipped with position
In the second aperture 041 on first grid 011；Second metal layer 05, covers etch-protecting layer 04, and the second metal layer 05 is wrapped
The second grid 051 for including the second source-drain electrode 052 of the second aperture 041 of covering and being connect with second source-drain electrode 052.
It wherein, is anterior canal close to the side of first grid 011 in one section of semiconductor layer 03 corresponding with first grid 011
Road close to the side of second grid 051 is back channel in one section of semiconductor layer 03 corresponding with second grid 051；
By the thin film transistor (TFT) in this etch stopper type structure, the first aperture 021 is set in gate insulating layer, so that first
Source-drain electrode 012 is directly contacted with semiconductor layer 03, and double diode connection is realized on stereo directional.When positive, semiconductor carries on the back ditch
Road is conductive, and charge circulates from the second source-drain electrode 052 toward 012 direction of the first source-drain electrode；When reversed, channel conduction before semiconductor, electricity
Lotus circulates from the first source-drain electrode 012 toward 052 direction of the second source-drain electrode.
Fig. 4 is the domain schematic diagram of electrostatic discharge protection circuit of the invention, wherein 01 is the first metal layer, and 021 is first to open
Hole, 03 is semiconductor layer, and 041 is the second aperture, and 05 is second metal layer.As shown, this with double diode structure
Thin film transistor (TFT) has only taken up the domain space of a TFT, also has effective protection effect while reducing domain space.
The invention also discloses a kind of manufacturing methods of electrostatic discharge protection circuit, comprising the following steps:
S1: deposition the first metal layer 01 is patterned to the first metal layer 01 and is formed first grid 011 and and the first grid
The first source-drain electrode 012 that pole 011 connects；
S2: the gate insulating layer 02 of covering the first metal layer 01 is formed, the gate insulating layer 02 is performed etching to be formed is located at
The first aperture 021 on first source-drain electrode 012；
S3: forming the semiconductor 03 being located on gate insulating layer 02, and the semiconductor layer 03 passes through the first aperture 021 and the first source
012 contact of drain electrode；
S4: the etch-protecting layer 04 of covering semiconductor layer 03 is formed, etch-protecting layer 04 is performed etching to be formed positioned at the first grid
Second aperture 041 of 011 top of pole；
S5: forming the second metal layer 05 of covering etch-protecting layer 04, carries out patterning to second metal layer 05 and forms covering the
Second source-drain electrode 052 of two apertures 041 and the second grid 051 being connect with second source-drain electrode 052, the second grid
051 is located at the top of the first source-drain electrode 012.
The invention also discloses a kind of electrostatic protection modules, are connected in series including multiple above-mentioned electrostatic discharge protection circuits.
The invention also discloses a kind of liquid crystal display device, including neighboring area and display area, neighboring area is equipped with upper
The electrostatic protection module stated, the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed.
The invention also discloses a kind of electrostatic discharge protection circuit, including N number of thin film transistor (TFT), N is the integer greater than 1；It is N number of thin
Film transistor, which sequentially connects, to be arranged between first electrode line and second electrode line.
Fig. 5 is the schematic diagram of electrostatic discharge protection circuit embodiment two of the present invention, as shown in figure 5, the thin film transistor (TFT) is one
Kind of top gate structure, successively includes: metal light shield layer 06 from the bottom up, including first grid 061 and with the first grid 061
First source-drain electrode 062 of connection；Buffer layer 07 covers metal light shield layer 06, and the buffer layer 07, which is equipped with, is located at the first source-drain electrode
The first aperture 071 on 062；Semiconductor layer 08 is located on buffer layer 07, the semiconductor layer 08 by the first aperture 071 with
The contact of first source-drain electrode 062；Gate insulating layer 09 covers semiconductor layer 08, and the gate insulating layer 09, which is equipped with, is located at the first grid
The second aperture 091 on pole 061；Metal layer 10, covers gate insulating layer 09, and the metal layer 10 includes the second aperture of covering
091 the second source-drain electrode 102 and the second grid 101 being connect with second source-drain electrode 102.
It wherein, is anterior canal close to the side of first grid 061 in one section of semiconductor layer 08 corresponding with first grid 061
Road close to the side of second grid 101 is back channel in one section of semiconductor layer 08 corresponding with second grid 101；
By the way that aperture is arranged in buffer layer on the thin film transistor (TFT) of this top gate structure, so that grid directly connects with semiconductor layer
Double diode connection is realized in touching on stereo directional.When positive, semiconductor carries on the back channel conduction, and charge is past from the second source-drain electrode 102
The circulation of first source-drain electrode, 062 direction；When reversed, channel conduction before semiconductor, charge is from the first source-drain electrode 062 toward the second source-drain electrode
The circulation of 102 directions.
The invention also discloses a kind of manufacturing methods of electrostatic discharge protection circuit, comprising the following steps:
S1: deposited metal light shield layer 06 carries out patterning to metal light shield layer 06 and forms first grid 061 and and first grid
First source-drain electrode 062 of 061 connection；
S2: the buffer layer 07 of covering metal light shield layer 06 is formed, the buffer layer 07 is performed etching to be formed positioned at the first source and drain
The first aperture 071 on pole 062；
S3: forming the semiconductor 08 being located on buffer layer 07, and the semiconductor layer 08 passes through the first aperture 071 and the first source-drain electrode
062 contact；
S4: forming the gate insulating layer 09 of covering semiconductor layer 08, performs etching to be formed positioned at the to the gate insulating layer 09
The second aperture 091 on one grid 061；
S5: forming the metal layer 10 of covering gate insulating layer 09, carries out patterning to metal layer 10 and forms the second aperture 091 of covering
The second source-drain electrode 102 and the second grid 101 that is connect with second source-drain electrode 102.
The invention also discloses a kind of electrostatic protection modules, are connected in series including multiple above-mentioned electrostatic discharge protection circuits.
The invention also discloses a kind of liquid crystal display device, including neighboring area and display area, neighboring area is equipped with upper
The electrostatic protection module stated, the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed.
Electrostatic discharge protection circuit of the invention is acted in etching type protection type thin film transistor (TFT) using top-gated and bottom gate, is passed through
It is realized on stereo directional in gate insulating layer or in buffer layer setting aperture so that grid and semiconductor layer are directly contacted
Double diode connection, when positive, semiconductor carries on the back channel conduction, and charge circulates from the second source-drain electrode toward the first source and drain extreme direction；Instead
Xiang Shi, channel conduction before semiconductor, charge circulate from the first source-drain electrode toward the second source and drain extreme direction.
It should be noted that the above is only a preferred embodiment of the present invention, but the present invention is not limited to above-mentioned
Detail in embodiment, it is noted that for those skilled in the art, in technology of the invention
In conception range, various improvements and modifications may be made without departing from the principle of the present invention, to technology of the invention
Scheme carries out a variety of equivalents, these are improved, retouching and equivalents also should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of electrostatic discharge protection circuit, which is characterized in that including N number of thin film transistor (TFT), N is the integer greater than 1；N number of film is brilliant
Body pipe, which sequentially connects, to be arranged between first electrode line and second electrode line；The thin film transistor (TFT) successively includes: from the bottom up
The first metal layer, including first grid and the first source-drain electrode being connect with first grid；
Gate insulating layer, covers the first metal layer, and the gate insulating layer is equipped with the first aperture being located on the first source-drain electrode；
Semiconductor layer is located on gate insulating layer, and the semiconductor layer is contacted by the first aperture with the first source-drain electrode；
Etch-protecting layer, covers semiconductor layer, and the etch-protecting layer is equipped with the second aperture being located on first grid；
Second metal layer, cover etch-protecting layer, the second metal layer include cover the second aperture the second source-drain electrode and
The second grid being connect with second source-drain electrode；
It wherein, is preceding channel close to the side of first grid in one section of semiconductor layer corresponding with first grid, with second grid
The side of close second grid is back channel in corresponding one section of semiconductor layer；
When positive, semiconductor carries on the back channel conduction, and charge circulates from the second source-drain electrode toward the first source and drain extreme direction；When reversed, partly lead
Channel conduction before body, charge circulate from the first source-drain electrode toward the second source and drain extreme direction.
2. a kind of manufacturing method of electrostatic discharge protection circuit, which comprises the following steps:
S1: deposition the first metal layer carries out patterning to the first metal layer and forms first grid and connect with first grid
First source-drain electrode；
S2: the gate insulating layer of covering the first metal layer is formed, the gate insulating layer is performed etching to be formed positioned at the first source
The first aperture in drain electrode；
S3: forming the semiconductor being located on gate insulating layer, and the semiconductor layer is contacted by the first aperture with the first source-drain electrode；
S4: the etch-protecting layer of covering semiconductor layer is formed, etch-protecting layer is performed etching to be formed above first grid
The second aperture；
S5: forming the second metal layer of covering etch-protecting layer, carries out patterning to second metal layer and forms the second aperture of covering
The second source-drain electrode and the second grid that is connect with second source-drain electrode, the second grid be located at the upper of the first source-drain electrode
Side.
3. a kind of electrostatic protection module, which is characterized in that including multiple electrostatic discharge protection circuit series connection described in claim 1
At.
4. a kind of liquid crystal display device, including neighboring area and display area, which is characterized in that neighboring area is equipped with claim
Electrostatic protection module described in 3, the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed.
5. a kind of electrostatic discharge protection circuit, which is characterized in that including N number of thin film transistor (TFT), N is the integer greater than 1；N number of film is brilliant
Body pipe, which sequentially connects, to be arranged between first electrode line and second electrode line；The thin film transistor (TFT) successively includes: from the bottom up
Metal light shield layer includes first grid and the first source-drain electrode for connecting with the first grid；
Buffer layer, covers metal light shield layer, and the buffer layer is equipped with the first aperture being located on the first source-drain electrode；
Semiconductor layer is located on buffer layer, and the semiconductor layer is contacted by the first aperture with the first source-drain electrode；
Gate insulating layer, covers semiconductor layer, and the gate insulating layer is equipped with the second aperture being located on first grid；
Metal layer, covers gate insulating layer, and the metal layer includes covering the second source-drain electrode of the second aperture and with described the
The second grid of two source-drain electrodes connection；
It wherein, is preceding channel close to the side of first grid in one section of semiconductor layer corresponding with first grid, with second grid
The side of close second grid is back channel in corresponding one section of semiconductor layer；
When positive, semiconductor carries on the back channel conduction, and charge circulates from the second source-drain electrode toward the first source and drain extreme direction；When reversed, partly lead
Channel conduction before body, charge circulate from the first source-drain electrode toward the second source and drain extreme direction.
6. a kind of manufacturing method of electrostatic discharge protection circuit, which comprises the following steps:
S1: deposited metal light shield layer carries out patterning to metal light shield layer and forms first grid and connect with first grid
First source-drain electrode；
S2: the buffer layer of covering metal light shield layer is formed, the buffer layer is performed etching to be formed on the first source-drain electrode
First aperture；
S3: forming the semiconductor being located on buffer layer, and the semiconductor layer is contacted by the first aperture with the first source-drain electrode；
S4: the gate insulating layer of covering semiconductor layer is formed, the gate insulating layer is performed etching to be formed positioned at first grid
On the second aperture；
S5: forming the metal layer of covering gate insulating layer, carries out the second source that patterning forms the second aperture of covering to metal layer
Drain electrode and the second grid being connect with second source-drain electrode.
7. a kind of electrostatic protection module, which is characterized in that including the series connection of electrostatic discharge protection circuit described in multiple claims 5
At.
8. a kind of liquid crystal display device, including neighboring area and display area, which is characterized in that neighboring area is equipped with claim
Electrostatic protection module described in 7, the electrostatic protection module is connected by multiple electrostatic discharge protection circuits to be formed.
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Cited By (1)
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| CN110702955A (en) * | 2019-09-19 | 2020-01-17 | 南京中电熊猫平板显示科技有限公司 | Electrostatic protection device and anti-static test circuit |
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Application publication date: 20190308 |