CN109444945A - A kind of low crosstalk X-ray detector - Google Patents
A kind of low crosstalk X-ray detector Download PDFInfo
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- CN109444945A CN109444945A CN201811325018.3A CN201811325018A CN109444945A CN 109444945 A CN109444945 A CN 109444945A CN 201811325018 A CN201811325018 A CN 201811325018A CN 109444945 A CN109444945 A CN 109444945A
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- ray
- scintillation crystal
- low crosstalk
- ray detector
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- 239000013078 crystal Substances 0.000 claims abstract description 42
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 239000004568 cement Substances 0.000 claims description 6
- 229920006335 epoxy glue Polymers 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Inorganic materials [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011133 lead Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 8
- 238000000333 X-ray scattering Methods 0.000 abstract description 2
- 230000001066 destructive effect Effects 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a kind of low crosstalk X-ray detectors, reflective layer is equipped with including several scintillation crystal units and for realizing the photoelectric device of photoelectric conversion, around each scintillation crystal unit to surround the optical path of corresponding scintillation crystal unit and be isolated with the optical path of other scintillation crystal units；X-ray barrier layer is equipped in reflective layer, X-ray barrier layer is for stopping X-ray, to prevent X-ray from entering another adjacent scintillation crystal unit optical path from a scintillation crystal unit optical path.The setting on X-ray barrier layer of the present invention, can reduce X-ray crosstalk, reduce influence of the X-ray scattering to spatial resolution, can improve the spatial resolution of detector, and detection result is more acurrate reliable.
Description
Technical field
The present invention relates to the improvement of lossless detection technology, and in particular to a kind of low crosstalk X-ray detector belongs to radiation and visits
Survey technology field.
Background technique
X-ray detector is the core component of industrial non-destructive detection system, it is mainly by scintillator cells, reflective layer and light
Electrical part (such as PD, APD) composition, wherein the signal-to-noise ratio of the more high then detector of the light output of scintillator cells is better.Garnet knot
The scintillation crystal ((Gd of structure(1- alpha-beta-γ)ReαCeβMeγ)3(Al1-u-vGauScv)5O12, Re is at least one of Y, Lu, Tb, and Me is extremely
It is less one of Mg, Ca, Sr, Ba, 0≤α≤0.3,0.00001≤β≤0.01,0≤γ≤0.01,0.3≤u≤0.8,0
≤ v≤0.02, abbreviation Ce:GAGG) have high light output (>=30,000 photon/MeV), good physical and chemical performance (not cleavage,
Do not deliquesce) and ~ 520nm emission wavelength (being easy to match with photoelectric devices such as APD, PD, CCD), be made of Ce:GAGG crystal
X-ray detector has important application prospect in industrial non-destructive detection.
In industrial non-destructive detection system, the X-ray for being incident on detector has certain dispersion angle, it and scintillator
Rescattering between unit can also make the direction of propagation change, and partial x-ray is caused to pass through reflective layer from crystal unit side
Adjacent cells are entered, that is, there is X-ray crosstalk.The effective atomic number of Ce:GAGG crystal is smaller (~ 54), it is penetrated with high energy X
Line (such as: energy 9MeV) has stronger Compton scattering when acting on, and cross-interference issue is more serious, significantly reduces detector
Spatial resolution.
Summary of the invention
In view of the above shortcomings of the prior art, the purpose of the present invention is to provide a kind of X for reducing X-ray crosstalk to penetrate
Line detector.
To achieve the goals above, The technical solution adopted by the invention is as follows:
A kind of low crosstalk X-ray detector, including several scintillation crystal units and for realizing the photoelectric device of photoelectric conversion, often
Around a scintillation crystal unit be equipped with reflective layer with surround corresponding scintillation crystal unit optical path and with other scintillation crystal units
Optical path be isolated；It is characterized by: being equipped with X-ray barrier layer in reflective layer, X-ray barrier layer is used to stop X-ray, with
Prevent X-ray from entering another adjacent scintillation crystal unit optical path from a scintillation crystal unit optical path.
The reflective layer is double-layer structure, and X-ray barrier layer is located between reflective layer bilayer.
Density p >=9g/cm of X-ray barrier material3, effective atomic number Zeff≥70。
X-ray barrier material is opaque to the fluorescence of 450nm ~ 600nm.
X-ray barrier layer with a thickness of d, 0mm < d≤0.6mm.
The reflective layer is by Teflon, TiO2With epoxy glue mixture, BaSO4With composition any in epoxy glue mixture.
The scintillation crystal unit is Ce:GAGG crystal, and chemical formula is (Gd(1- alpha-beta-γ)ReαCeβMeγ)3(Al1-u- vGauScv)5O12, wherein Re is at least one of Y, Lu, Tb, and Me is at least one of Mg, Ca, Sr, Ba, 0≤α≤0.3,
0.00001≤β≤0.01,0≤γ≤0.01,0.3≤u≤0.8,0≤v≤0.02.
It is coupled between the photoelectric device and scintillation crystal unit, between reflective layer and X-ray barrier layer by optical cement.
The transmitance of the optical cement within the scope of 450nm ~ 600nm >=90%.
The preferred tungsten of the X-ray barrier material, lead, molybdenum.
Compared with prior art, the invention has the following advantages:
1, the setting on X-ray barrier layer can reduce X-ray crosstalk, reduce influence of the X-ray scattering to spatial resolution,
The spatial resolution of detector can be improved, detection result is more acurrate reliable.
2, the setting on X-ray barrier layer can prevent the blinking through reflective layer from entering adjacent scintillation crystal list
Member avoids the optical crosstalk between scintillation crystal unit.
Detailed description of the invention
Fig. 1-schematic structural view of the invention.Arrow indicates the approach axis of X-ray in figure.
Specific embodiment
With reference to the accompanying drawing, present invention is further described in detail.
It referring to Fig. 1, can be seen from the chart, a kind of low crosstalk X-ray detector proposed by the present invention, including several flashings
Crystal unit 1 and photoelectric device 4 for realizing photoelectric conversion, one of photoelectric device APD, PD, SiPM or CCD.Often
Around a scintillation crystal unit 1 be equipped with reflective layer 2 with surround corresponding scintillation crystal unit optical path and with other scintillation crystal lists
The optical path of member is isolated.Shining for scintillation crystal unit 1 can only be isolated in reflective layer 2, cannot stop the very strong X-ray of penetration power,
If reflective layer, X-ray still may pass through reflective layer and reach other scintillation crystal units, to generate ray string
It disturbs.To avoid X-ray crosstalk, the present invention is equipped with X-ray barrier layer 3 in reflective layer, and X-ray barrier layer 3 is for stopping X to penetrate
Line, to prevent X-ray from entering another adjacent scintillation crystal unit optical path from a scintillation crystal unit optical path.
In order to facilitate setting X-ray barrier layer 3, reflective layer 2 is set as double-layer structure by the present invention, and X-ray barrier layer 3 is located at
Between 2 bilayer of reflective layer.Reflective layer is three-decker in other words, and both sides are reflectorized material, and centre is X-ray barrier material.
Density p >=9g/cm of X-ray barrier material3, effective atomic number Zeff≥70.Density and effective atomic number
It is bigger, then it is stronger to the absorption of X-ray, that is, blocking capability is stronger, such as the heavy element materials such as W, Mo, Pb.
X-ray barrier layer with a thickness of d, 0.1mm < d≤0.6mm；It is preferred that 0.1mm≤d≤0.3mm.Theoretically,
Barrier layer thickness is bigger, and the ability for stopping ray is stronger.But it is too thick if, lead to spacing between two scintillation crystal units too
Greatly, these places are the detection blind areas of X-ray, so practical preferably 0.1mm≤d≤0.3mm, is guaranteeing to stop ray in this way
Under the premise of minimized detection blind area.
The reflective layer is by Teflon, TiO2With epoxy glue mixture, BaSO4With composition any in epoxy glue mixture.
Scintillation crystal is Ce:GAGG crystal, and chemical formula is (Gd(1- alpha-beta-γ)ReαCeβMeγ)3(Al1-u-vGauScv)5O12, 0
≤ α≤0.3,0.00001≤β≤0.01,0≤γ≤0.01,0.3≤u≤0.8,0≤v≤0.02, wherein Re can for Y, Lu,
One of Tb or a variety of can also not have, and Me can be one of Mg, Ca, Sr, Ba or a variety of, can also not have.
It is coupled between the photoelectric device and scintillation crystal unit, between reflective layer and X-ray barrier layer by optical cement.
The transmitance of the optical cement within the scope of 450nm ~ 600nm >=90%.
The above embodiment of the present invention is only example to illustrate the invention, and is not to implementation of the invention
The restriction of mode.For those of ordinary skill in the art, other can also be made not on the basis of the above description
With the variation and variation of form.Here all embodiments can not be exhaustive.It is all to belong to technical solution of the present invention
Changes and variations that derived from are still in the scope of protection of the present invention.
Claims (10)
1. a kind of low crosstalk X-ray detector, including several scintillation crystal units and for realizing the photoelectric device of photoelectric conversion,
Around each scintillation crystal unit be equipped with reflective layer with surround corresponding scintillation crystal unit optical path and with other scintillation crystal lists
The optical path of member is isolated；It is characterized by: being equipped with X-ray barrier layer in reflective layer, X-ray barrier layer is used to stop X-ray,
To prevent X-ray from entering another adjacent scintillation crystal unit optical path from a scintillation crystal unit optical path.
2. a kind of low crosstalk X-ray detector according to claim 1, it is characterised in that: the reflective layer is the double-deck knot
Structure, X-ray barrier layer are located between reflective layer bilayer.
3. a kind of low crosstalk X-ray detector according to claim 1, it is characterised in that: X-ray barrier material it is close
Spend ρ >=9g/cm3, effective atomic number Zeff≥70。
4. a kind of low crosstalk X-ray detector according to claim 1, it is characterised in that: X-ray barrier material pair
The fluorescence of 450nm ~ 600nm is opaque.
5. a kind of low crosstalk X-ray detector according to claim 1, it is characterised in that: X-ray barrier layer with a thickness of
D, 0mm < d≤0.6mm.
6. a kind of low crosstalk X-ray detector according to claim 1, it is characterised in that: the reflective layer by Teflon,
TiO2With epoxy glue mixture, BaSO4With composition any in epoxy glue mixture.
7. a kind of low crosstalk X-ray detector according to claim 1, it is characterised in that: the scintillation crystal unit is
Ce:GAGG crystal, chemical formula are (Gd(1- alpha-beta-γ)ReαCeβMeγ)3(Al1-u-vGauScv)5O12, wherein Re is at least Y, Lu, Tb
One of, Me is at least one of Mg, Ca, Sr, Ba, 0≤α≤0.3,0.00001≤β≤0.01,0≤γ≤0.01,
0.3≤u≤0.8,0≤v≤0.02.
8. a kind of low crosstalk X-ray detector according to claim 1, it is characterised in that: the photoelectric device and flashing
It is coupled between crystal unit, between reflective layer and X-ray barrier layer by optical cement.
9. a kind of low crosstalk X-ray detector according to claim 8, it is characterised in that: the transmitance of the optical cement
Within the scope of 450nm ~ 600nm >=90%.
10. a kind of low crosstalk X-ray detector according to claim 1, it is characterised in that: X-ray barrier layer material
Expect preferred tungsten, lead, molybdenum.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811325018.3A CN109444945A (en) | 2018-11-08 | 2018-11-08 | A kind of low crosstalk X-ray detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811325018.3A CN109444945A (en) | 2018-11-08 | 2018-11-08 | A kind of low crosstalk X-ray detector |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811325018.3A Pending CN109444945A (en) | 2018-11-08 | 2018-11-08 | A kind of low crosstalk X-ray detector |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110426729A (en) * | 2019-03-27 | 2019-11-08 | 湖北锐世数字医学影像科技有限公司 | Single event bearing calibration, image rebuilding method, device and computer storage medium |
| CN110491753A (en) * | 2019-07-11 | 2019-11-22 | 长春理工大学 | X-ray fluorescence screen with vertical channel structure |
| CN112281215A (en) * | 2020-09-30 | 2021-01-29 | 中国电子科技集团公司第二十六研究所 | Method for improving luminescence uniformity and reducing afterglow of Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, crystal material and detector |
| CN113126138A (en) * | 2021-04-23 | 2021-07-16 | 重庆大学 | Method for manufacturing high-resolution scintillation screen with multilayer coupling structure and scintillation screen |
| WO2023123161A1 (en) * | 2021-12-30 | 2023-07-06 | Shenzhen Xpectvision Technology Co., Ltd. | Imaging systems with image sensors for side radiation incidence during imaging |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110426729A (en) * | 2019-03-27 | 2019-11-08 | 湖北锐世数字医学影像科技有限公司 | Single event bearing calibration, image rebuilding method, device and computer storage medium |
| CN110491753A (en) * | 2019-07-11 | 2019-11-22 | 长春理工大学 | X-ray fluorescence screen with vertical channel structure |
| CN112281215A (en) * | 2020-09-30 | 2021-01-29 | 中国电子科技集团公司第二十六研究所 | Method for improving luminescence uniformity and reducing afterglow of Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, crystal material and detector |
| CN112281215B (en) * | 2020-09-30 | 2021-06-15 | 中国电子科技集团公司第二十六研究所 | Method for improving luminescence uniformity and reducing afterglow of Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, crystal material and detector |
| WO2022068229A1 (en) * | 2020-09-30 | 2022-04-07 | 中国电子科技集团公司第二十六研究所 | Method of increasing luminescence uniformity and reducing afterglow by means of ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, crystal material and detector |
| US11885041B2 (en) | 2020-09-30 | 2024-01-30 | China Electronics Technology Group Corporation No. 26 Research Institute | Method for increasing luminescence uniformity and reducing afterglow of Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, crystal material and detector |
| CN113126138A (en) * | 2021-04-23 | 2021-07-16 | 重庆大学 | Method for manufacturing high-resolution scintillation screen with multilayer coupling structure and scintillation screen |
| CN113126138B (en) * | 2021-04-23 | 2022-11-11 | 重庆大学 | Method for manufacturing high-resolution scintillation screen with multilayer coupling structure and scintillation screen |
| WO2023123161A1 (en) * | 2021-12-30 | 2023-07-06 | Shenzhen Xpectvision Technology Co., Ltd. | Imaging systems with image sensors for side radiation incidence during imaging |
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