CN109427981B - QLED device and preparation method thereof - Google Patents
QLED device and preparation method thereof Download PDFInfo
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- CN109427981B CN109427981B CN201710751673.4A CN201710751673A CN109427981B CN 109427981 B CN109427981 B CN 109427981B CN 201710751673 A CN201710751673 A CN 201710751673A CN 109427981 B CN109427981 B CN 109427981B
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The invention provides a QLED device, which comprises an anode and a cavity which are arranged in sequenceA hole injection layer, a quantum dot light emitting layer and a cathode, wherein the hole injection layer is made of MoOxthe/PANI nano composite material is prepared, or the hole injection layer contains MoOx/PANI nanocomposite wherein the MoOxthe/PANI nano composite material is polyaniline-coated one-dimensional MoOxAnd (3) nano materials.
Description
Technical Field
The invention belongs to the field of QLEDs, and particularly relates to a QLED device and a preparation method thereof.
Background
Due to the advantages of high light color purity, high light-emitting quantum efficiency, adjustable light-emitting color, high quantum yield and the like, and the quantum dots can be prepared by a printing process, light-emitting diodes (namely quantum dot light-emitting diodes: QLEDs) based on the quantum dots are generally concerned by people recently, and the performance indexes of the quantum dots are rapidly developed. However, due to the fact that the quantum dot material is deep in energy level and large in ionization potential, a large hole injection barrier still exists between the existing hole transport layer and the quantum dot light emitting layer, hole injection from the anode to the light emitting layer is difficult, hole injection efficiency is generally low compared with electron injection efficiency, carrier injection in the QLED light emitting layer is unbalanced, and therefore the performance of the QLED device is severely limited.
At present, transition metal molybdenum oxide is widely used in a hole injection layer of an electroluminescent device, but the dispersibility of the transition metal molybdenum oxide is not good enough, and the hole injection capability and the mobility of the transition metal molybdenum oxide cannot completely meet the requirements, so how to optimize the performance of the transition metal molybdenum oxide, improve the hole injection capability and the mobility of the transition metal molybdenum oxide in a QLED device, effectively balance carriers in a light emitting layer, and be a key point of current research for improving the optical performance of the QLED device.
Disclosure of Invention
The invention aims to provide a QLED device and a preparation method thereof, and aims to solve the problems that the existing transition metal molybdenum oxide is poor in dispersibility when used as a hole injection layer, and the optical performance of the QLED device is influenced.
The QLED device comprises an anode, a hole injection layer, a quantum dot light emitting layer and a cathode which are sequentially arranged, wherein the hole injection layer contains MoOx/PANI nanocomposite wherein the MoOxthe/PANI nano composite material is polyaniline-coated one-dimensional MoOxAnd (3) nano materials.
And, a method of manufacturing a QLED device, comprising the steps of:
providing an anode substrate, and depositing a hole injection material solution on the anode substrate to prepare a hole injection layer, wherein the hole injection material solution contains a MoOx/PANI nano composite material;
depositing a quantum dot light-emitting layer and a cathode on the hole injection layer in sequence; or
Providing a cathode substrate, and depositing a quantum dot light-emitting layer on the cathode;
depositing a hole injection material solution on the quantum dot light-emitting layer, preparing a hole injection layer, and preparing an anode on the hole injection layer, wherein the hole injection material solution contains a MoOx/PANI nano composite material.
According to the QLED device provided by the invention, the hole injection layer contains MoOx/PANI nano composite material. The PANI is an excellent conductive polymer, has diversified structures and good environmental stability, and the conductive performance of the QLED device cannot be reduced due to the addition of the PANI. On the basis, the MoOx/PANI nano composite material is a Polyaniline (PANI) coated one-dimensional MoOx nano material, so that the MoOx/PANI nano composite material has better dispersibility, and MoOxPANI to MoO in/PANI nano composite materialxHas a domain-limiting effect, and thus MoO can be preventedxAnd (3) providing a transmission channel for the holes while agglomeration occurs, thereby realizing the rapid migration of the holes. Further, the MoOxMoO in/PANI nano composite materialxAs a support for PANI, the structural stability of the material can be improved. Thus, the MoOxthe/PANI composite material can be doped into other hole injection materials to prepare a hole injection layer, and can also be independently used as the hole injection layer, so that the hole injection capability and the hole mobility of the electroluminescent device are improved, carriers in a light emitting layer are effectively balanced, and the optical performance of the QLED device is improved.
According to the preparation method of the QLED device, on the basis of the preparation method of the conventional QLED device, the hole injection material solution contains MoOxThe hole injection layer adopts a PANI nano composite materialThe solution processing method is simple and easy to control, and has better film forming uniformity. The QLED device prepared by the method has better optical performance.
Drawings
Fig. 1 is a schematic structural diagram of a QLED device provided in an embodiment of the present invention;
fig. 2 is a schematic diagram of a preferred structure of a QLED device provided by an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
With reference to fig. 1 and fig. 2, an embodiment of the present invention provides a QLED device, including an anode 1, a hole injection layer 2, a quantum dot light emitting layer 4, and a cathode 6, which are sequentially disposed, where the hole injection layer 2 contains MoOx/PANI nanocomposite wherein the MoOxthe/PANI nano composite material is polyaniline-coated one-dimensional MoOxNanomaterial, as shown in figure 1.
According to the QLED device provided by the embodiment of the invention, the hole injection layer contains MoOx/PANI nano composite material. The PANI is an excellent conductive polymer, has diversified structures and good environmental stability, and the conductive performance of the QLED device cannot be reduced due to the addition of the PANI. On the basis, the MoOx/PANI nano composite material is a Polyaniline (PANI) coated one-dimensional MoOx nano material, so that the MoOx/PANI nano composite material has better dispersibility, and MoOxPANI to MoO in/PANI nano composite materialxHas a domain-limiting effect, and thus MoO can be preventedxAnd (3) providing a transmission channel for the holes while agglomeration occurs, thereby realizing the rapid migration of the holes. Further, the MoOxMoO in/PANI nano composite materialxAs a support for PANI, the structural stability of the material can be improved. Thus, the MoOxthe/PANI composite material can be doped into other hole injection materials for preparationThe hole injection layer can also be independently used as the hole injection layer, which is beneficial to improving the hole injection capability and the hole mobility of the electroluminescent device, thereby effectively balancing current carriers in the light-emitting layer and improving the optical performance of the QLED device.
In particular, as an implementation case, the hole injection layer 2 is made of MoOx/PANI nanocomposites and other hole injection materials, i.e. MoOxthe/PANI nano composite material is doped in other hole injection materials to prepare the hole injection layer 2. The other hole injection material is MoOxPSS, and the selection of the type and the amount of the other hole injection materials are not strictly limited, one other hole injection material can be selected, and a plurality of other hole injection materials can also be adopted. When the hole injection layer is made of MoOxWhen made of/PANI nano composite material and other hole injection material, MoOxThe content of the/PANI nano composite material is not strictly limited, and in principle, the higher the doping proportion is, the better the dispersion performance of the hole injection material is, and the higher the hole injection capability and the hole mobility are, the more the optical performance of the QLED device is favorably improved.
As another implementation, the hole injection layer 2 is made of MoOxthe/PANI nano composite material. At this time, MoOxThe PANI nano composite material is used as the only material of the hole injection layer 2, the performance of the PANI nano composite material is fully exerted, the hole injection capability and the hole mobility of the PANI nano composite material are fully exerted, and the QLED device is endowed with excellent optical performance.
In the above embodiment, the thickness of the hole injection layer 2 is 10 to 100 nm. If the thickness of the hole injection layer 2 is too low, the hole injection performance is poor even if MoO is usedxThe PANI nano composite material is used as the only material of the hole injection layer, and the hole injection performance is difficult to effectively improve; if the thickness of the hole injection layer 2 is too thick, the resistance is large, and the performance of the QLED device is not balanced.
Preferably, the QLED device further includes at least one of a hole transport layer 3, an electron transport layer 5, and an electron injection layer (not shown), but is not limited thereto.
As a specific preferred embodiment, the QLED device comprises an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5 and a cathode 6 which are sequentially arranged, wherein the hole injection layer is made of MoOx/PANI nano composite material and other hole injection material, wherein the MoOxthe/PANI nano composite material is polyaniline-coated one-dimensional MoOxAnd (3) nano materials.
As a specific preferred embodiment, the QLED device comprises an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5 and a cathode 6 which are sequentially arranged, wherein the hole injection layer is made of MoOx/PANI nanocomposite, wherein the MoOxthe/PANI nano composite material is polyaniline-coated one-dimensional MoOxAnd (3) nano materials.
In the embodiment of the present invention, the anode 1 may be an ITO anode, but is not limited thereto.
The hole transport layer 3 may be made of a conventional hole transport material including, but not limited to, at least one of PVK, Poly-TPD. The thickness of the hole transport layer 3 is preferably 1 to 100 nm.
The quantum dot light-emitting layer 4 is made of conventional quantum dot materials, and the selection of the quantum dot materials in the embodiment of the invention is not strictly limited.
The electron transport layer 5 may be made of a material having electron transport ability, including a low work function metal, an inorganic compound, an electrolyte type electron transport layer material, and the like. Specifically, the metal includes, but is not limited to, low work function Ca, Ba, and the like, and the inorganic compound includes, but is not limited to, CsF, LiF, CsCO3. Preferably, n-type zinc oxide having high electron transport properties is used for the electron transport layer 5, preferably with a thickness of 30 to 60 nm.
The cathode 6 may be made of a conventional cathode material, and preferably has a thickness of 60 to 120 nm.
The structure of the two QLED devices with the preferred embodiment is shown in fig. 2.
The QLED device provided by the embodiment of the invention can be prepared by the following method.
The embodiment of the invention also provides a preparation method of the QLED device, and the preparation method of the QLED device is divided into two cases.
Specifically, as an implementation situation, the method for manufacturing the QLED device includes the following steps:
s01, providing an anode substrate, and depositing a hole injection material solution on the anode substrate to prepare a hole injection layer, wherein the hole injection material solution contains a MoOx/PANI nano composite material;
s02, depositing a quantum dot light-emitting layer and a cathode on the hole injection layer in sequence.
In the step S01, an anode substrate is provided, and preferably, a clean anode substrate is subjected to an oxygen plasma treatment or an ultraviolet-ozone treatment to further remove organic substances attached to the ITO surface and increase the work function of ITO.
And depositing a hole injection material solution on the anode substrate, wherein the hole injection material solution contains a MoOx/PANI nano composite material. The method is realized by adopting a solution processing method, so that the uniformity and controllability of the film layer are improved.
The deposition of the hole injection material solution on the anode substrate includes two cases, as an embodiment, the hole injection material solution is MoOxThe composite solution is formed by the PANI nano composite material and other hole injection materials.
As another implementation case, the hole injection material solution is MoOx/PANI nanocomposite solution. Further preferably, the MoOxThe concentration of the/PANI nano composite material solution is 0.1-10 mg/ml. If the MoO isxIf the concentration of the PANI nano composite material solution is too low, the formed hole injection layer film layer is thin, even can not completely cover the substrate, and the hole injection performance can not be effectively exerted; if the MoO isxWhen the concentration of the PANI nano composite material solution is too high, the viscosity is larger, and the formed film layer is too thick, so that the resistance of the device is increased.
In the step S02, the quantum dot light-emitting layer and the cathode are sequentially deposited on the hole injection layer, and the deposition can be performed by a conventional method. For example, the preparation method of the cathode comprises the following steps: and (3) placing the sheet to be treated in an evaporation chamber, and thermally evaporating a layer of cathode through a mask plate.
Preferably, before depositing the quantum dot light-emitting layer, a hole transport layer is further deposited.
And/or, preferably, before depositing the cathode, at least one of an electron transport layer and an electron injection layer is deposited on the quantum dot light emitting layer.
As another implementation case, the method for manufacturing the QLED device includes the steps of:
providing a cathode substrate, and depositing a quantum dot light-emitting layer on the cathode;
and Q02, depositing a hole injection material solution on the quantum dot light emitting layer to prepare a hole injection layer, and preparing an anode on the hole injection layer, wherein the hole injection material solution contains a MoOx/PANI nano composite material.
In the step Q01, a cathode substrate is provided, and preferably, a clean cathode substrate is subjected to oxygen plasma treatment or ultraviolet-ozone treatment to further remove organic substances attached to the surface.
The deposition of the quantum dot light emitting layer on the cathode can be achieved by conventional methods. Preferably, before depositing the quantum dot light emitting layer, at least one of an electron transport layer and an electron injection layer is deposited on the cathode.
In the step Q02, a hole injection material solution is deposited on the quantum dot light emitting layer, and the hole injection material solution contains a MoOx/PANI nanocomposite. The method is realized by adopting a solution processing method, so that the uniformity and controllability of the film layer are improved.
The method for depositing the hole injection material solution on the quantum dot light-emitting layer comprises two cases, as one embodiment, the hole injection material solution is MoOxThe composite solution is formed by the PANI nano composite material and other hole injection materials.
As another implementation case, the hole injection material solution is MoOx(PANI sodium)Rice composite solution. Further preferably, the MoOxThe concentration of the/PANI nano composite material solution is 0.1-10 mg/ml. If the MoO isxIf the concentration of the PANI nano composite material solution is too low, the formed hole injection layer film layer is thin, even can not completely cover the substrate, and the hole injection performance can not be effectively exerted; if the MoO isxWhen the concentration of the PANI nano composite material solution is too high, the viscosity is larger, and the formed film layer is too thick, so that the resistance of the device is increased.
Preferably, before depositing the hole injection layer, depositing a hole transport layer on the quantum dot light emitting layer is further included.
Further, an anode is formed on the hole injection layer, and may be formed by a conventional method.
In the above embodiment, preferably, the MoOxThe preparation method of the/PANI nano composite material comprises the following steps:
E01. molybdate and aniline are provided and mixed under acidic condition to prepare Mo3O10(C6H5NH3)2·2H2An O nanowire precursor;
E02. mixing the Mo3O10(C6H5NH3)2·2H2Dispersing the precursor of the O nanowire into deionized water, adding an initiator, stirring and treating under an acidic condition to prepare MoOx/PANI nano composite material.
Specifically, in step E01, the molybdate includes, but is not limited to, ammonium molybdate. And mixing the molybdate and aniline under an acidic condition. Preferably, the molybdate and aniline are dissolved in deionized water, and magnetic stirring is carried out, and inorganic acid solution, such as hydrochloric acid, is added while stirring. Particularly preferably, the pH value of the acidic condition is 4-5 (at which the generation of white precipitate Mo begins to occur3O10(C6H5NH3)2·2H2O nanowire precursor). Followed by rapid stirring, preferably with heating (e.g., 50 deg.C oil bath), to give a large amount of white precipitate.
Further, deionized water and anhydrous water are usedCleaning and filtering with ethanol for several times until the filtrate is neutral, and vacuum drying to obtain Mo3O10(C6H5NH3)2·2H2And (4) O nanowire precursor.
In the step E02, the Mo is added3O10(C6H5NH3)2·2H2Dispersing the precursor of the O nanowire in deionized water, performing ultrasonic dispersion until the solution turns to milk white, adding an initiator, stirring under an acidic condition, and initiating a polymerization reaction. At this time, Mo3O10(C6H5NH3)2·2H2The O nanowire precursor plays a role of a template, and a molecular chain of the PANI is self-assembled along the length direction of the nanowire during polymerization to obtain the one-dimensional nanostructure, which has good dispersibility and no obvious agglomeration. Preferably, the acidic conditions have a pH of 4 to 5. Preferably, the initiator is a persulfate salt, including but not limited to potassium persulfate.
The following description will be given with reference to specific examples.
Example 1
One-dimensional MoOxThe preparation method of the/PANI nano composite material comprises the following specific steps:
E01. preparation of Mo3O10(C6H5NH3)2·2H2O nanowire precursor: 2.575g of ammonium molybdate (NH) were weighed out separately4Mo7O24∙4H2O and 3.40g of aniline (C)6H5NH2) Dissolving the mixture in 40mL of deionized water, placing the mixture on a temperature-controlled magnetic stirrer, slowly stirring the mixture while dropwise adding 1mol/L HCl solution, adjusting the pH to 4-5 (at the moment, white precipitate starts to be generated), then quickly stirring the mixture for 2 hours (50 ℃, oil bath) to obtain a large amount of white precipitate, washing and filtering the white precipitate for a plurality of times by using deionized water and absolute ethyl alcohol until the filtrate is neutral, and drying the mixture in vacuum (60 ℃,12 hours) to obtain Mo3O10(C6H5NH3)2·2H2And (4) O nanowire precursor.
E02. Preparing MoOx/PANI by in-situ polymerization: 0.67g of Mo was weighed3O10(C6H5NH3)2·2H2Dissolving the precursor of the O nanowire in 80ml of deionized water, performing ultrasonic dispersion until the solution turns to milk white, and then adding 1.13g K2S2O8As an initiator, potassium persulfate was dissolved by stirring with a glass rod. Slowly stirring the solution on a magnetic stirrer, dropwise adding 1mol/L HCl solution, adjusting the pH value of the mixed solution to 4, continuously stirring at room temperature for 6h to obtain dark green precipitate, washing with deionized water and ethanol, filtering for several times until the filtrate is neutral, and vacuum drying (60 ℃,12h) to obtain MoOx/PANI nano composite material.
Example 2
The QLED device comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathode which are sequentially arranged, wherein the hole injection layer is made of MoOx/PANI nanocomposite, wherein the MoOxthe/PANI nano composite material is polyaniline-coated one-dimensional MoOxAnd (3) nano materials.
The preparation method of the QLED device comprises the following steps:
and (3) placing the patterned ITO substrate in acetone, washing liquor, deionized water and isopropanol in sequence for ultrasonic cleaning, wherein the ultrasonic cleaning lasts for about 15 minutes. And after the ultrasonic treatment is finished, drying the ITO in a clean oven for later use. And after the ITO substrate is dried, treating the ITO surface with ultraviolet ozone for 5 minutes to further remove organic matters attached to the ITO surface and improve the work function of the ITO.
Adding MoOxAdding the/PANI nano composite material into 1ml of isopropanol, and uniformly dispersing by ultrasonic to prepare 0.5mg/ml MoOxa/PANI nanocomposite solution; adding MoOxthe/PANI nanocomposite solution was deposited on the surface of the treated ITO substrate, the layer having a thickness of 30nm, and the substrate was heated on a heating stage at 150 ℃ for 30 minutes to remove the solvent.
The dried substrate coated with the hole injection layer was placed in a nitrogen atmosphere, a layer of a hole transport layer material TFB was deposited, the thickness of this layer was 30nm, and the substrate was placed on a heating stage at 150 ℃ for 30 minutes to remove the solvent.
And after the wafer processed in the previous step is cooled, depositing a quantum dot light-emitting layer on the surface of the hole transport layer, wherein the thickness of the quantum dot light-emitting layer is 20 nm. After the deposition was completed, the wafer was placed on a heating stage at 80 ℃ and heated for 10 minutes to remove the residual solvent.
And depositing an electron transport layer on the quantum dot light emitting layer, wherein the electron transport layer is n-type zinc oxide with high electron transport performance and the thickness of the electron transport layer is 30 nm.
And (3) placing the sheets on which the functional layers are deposited in an evaporation bin, and thermally evaporating a layer of 100nm aluminum as a cathode through a mask plate, wherein the thickness of the aluminum is 100 nm.
Example 3
The QLED device comprises an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathode which are sequentially arranged, wherein the hole injection layer is made of MoOxPSS, wherein the MoO is prepared from/PANI nano composite material and PEDOTxthe/PANI nano composite material is polyaniline-coated one-dimensional MoOxAnd (3) nano materials.
The preparation method of the QLED device comprises the following steps:
and (3) placing the patterned ITO substrate in acetone, washing liquor, deionized water and isopropanol in sequence for ultrasonic cleaning, wherein the ultrasonic cleaning lasts for about 15 minutes. And after the ultrasonic treatment is finished, drying the ITO in a clean oven for later use. And after the ITO substrate is dried, treating the ITO surface with ultraviolet ozone for 5 minutes to further remove organic matters attached to the ITO surface and improve the work function of the ITO.
0.5mg of MoOxthe/PANI was added to 1ml of deionized water and dispersed uniformly by sonication, then mixed with an equal volume of PEDOT: PSS solution and stirred uniformly to obtain a mixed solution, the mixed solution was deposited on the surface of the treated ITO substrate, the thickness of this layer was 30nm, and the substrate was heated on a heating stage at 150 ℃ for 30 minutes to remove water.
The dried substrate coated with the composite hole injection layer was placed in a nitrogen atmosphere to deposit a layer of hole transport layer material TFB, the thickness of which was 30nm, and the substrate was placed on a heating stage at 150 ℃ and heated for 30 minutes to remove the solvent.
And after the wafer processed in the previous step is cooled, depositing a quantum dot light-emitting layer on the surface of the hole transport layer, wherein the thickness of the quantum dot light-emitting layer is 20 nm. After the deposition was completed, the wafer was placed on a heating stage at 80 ℃ and heated for 10 minutes to remove the residual solvent.
And depositing an electron transport layer on the quantum dot light emitting layer, wherein the electron transport layer is n-type zinc oxide with high electron transport performance and the thickness of the electron transport layer is 30 nm.
And (3) placing the sheets on which the functional layers are deposited in an evaporation bin, and thermally evaporating a layer of 100nm aluminum as a cathode through a mask plate, wherein the thickness of the aluminum is 100 nm.
Example 4
The QLED device comprises an anode, a hole injection layer, a quantum dot light-emitting layer and a cathode which are sequentially arranged, wherein the hole injection layer is made of MoOxPSS, wherein the MoO is prepared from/PANI nano composite material and PEDOTxthe/PANI nano composite material is polyaniline-coated one-dimensional MoOxAnd (3) nano materials.
The preparation method of the QLED device comprises the following steps:
and (3) placing the patterned ITO substrate in acetone, washing liquor, deionized water and isopropanol in sequence for ultrasonic cleaning, wherein the ultrasonic cleaning lasts for about 15 minutes. And after the ultrasonic treatment is finished, drying the ITO in a clean oven for later use. And after the ITO substrate is dried, treating the ITO surface with ultraviolet ozone for 5 minutes to further remove organic matters attached to the ITO surface and improve the work function of the ITO.
0.5mg of MoOxthe/PANI was added to 1ml of deionized water and dispersed uniformly by sonication, then mixed with an equal volume of nickel oxide solution and stirred uniformly to obtain a mixed solution, the mixed solution was deposited on the surface of the treated ITO substrate, the thickness of this layer was 30nm, and the substrate was heated on a heating stage at 150 ℃ for 30 minutes to remove water.
And after the wafer processed in the previous step is cooled, depositing a quantum dot light-emitting layer on the surface of the hole injection layer, wherein the thickness of the quantum dot light-emitting layer is 20 nm. After the deposition was completed, the wafer was placed on a heating stage at 80 ℃ and heated for 10 minutes to remove the residual solvent.
And (3) placing the sheet on which the quantum dot light emitting layer is deposited in an evaporation bin, and thermally evaporating a layer of 100nm aluminum as a cathode through a mask plate, wherein the thickness of the aluminum is 100 nm.
Example 5
A QLED device comprises an anode, a hole injection layer, a quantum dot light emitting layer and a cathode which are sequentially arranged, wherein the hole injection layer is made of a MoOx/PANI nano composite material, and the MoOx/PANI nano composite material is a polyaniline-coated one-dimensional MoOx nano material.
The preparation method of the QLED device comprises the following steps:
and (3) placing the patterned ITO substrate in acetone, washing liquor, deionized water and isopropanol in sequence for ultrasonic cleaning, wherein the ultrasonic cleaning lasts for about 15 minutes. And after the ultrasonic treatment is finished, drying the ITO in a clean oven for later use. And after the ITO substrate is dried, treating the ITO surface with ultraviolet ozone for 5 minutes to further remove organic matters attached to the ITO surface and improve the work function of the ITO.
Adding MoOxAdding the/PANI nano composite material into 1ml of isopropanol, and uniformly dispersing by ultrasonic to prepare 0.5mg/ml MoOxa/PANI nanocomposite solution; adding MoOxthe/PANI nanocomposite solution was deposited on the surface of the treated ITO substrate, the layer having a thickness of 30nm, and the substrate was heated on a heating stage at 150 ℃ for 30 minutes to remove the solvent.
And after the wafer processed in the previous step is cooled, depositing a quantum dot light-emitting layer on the surface of the hole injection layer, wherein the thickness of the quantum dot light-emitting layer is 20 nm. After the deposition was completed, the wafer was placed on a heating stage at 80 ℃ and heated for 10 minutes to remove the residual solvent.
And (3) placing the sheet on which the quantum dot light emitting layer is deposited in an evaporation bin, and thermally evaporating a layer of 100nm aluminum as a cathode through a mask plate, wherein the thickness of the aluminum is 100 nm.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. The QLED device is characterized by comprising an anode, a hole injection layer, a quantum dot light emitting layer and a cathode which are sequentially arranged, wherein the hole injection layer contains MoOx/PANI nanocomposite wherein the MoOxthe/PANI nano composite material is polyaniline-coated one-dimensional MoOxA nanomaterial;
wherein, the MoOxThe preparation method of the/PANI nano composite material comprises the following steps: molybdate and aniline are provided and mixed under acidic condition to prepare Mo3O10(C6H5NH3)2·2H2An O nanowire precursor; mixing the Mo3O10(C6H5NH3)2·2H2Dispersing the precursor of the O nanowire into deionized water, adding an initiator, and stirring under the acidic condition that the pH value is 4-5 to prepare MoOx/PANI nano composite material.
2. The QLED device of claim 1, wherein the hole injection layer is formed from MoOx/PANI nano composite material and other hole injecting material.
3. The QLED device of claim 1, wherein the hole injection layer is formed from MoOxthe/PANI nano composite material.
4. The QLED device of any of claims 1-3, wherein the hole injection layer has a thickness of 10-100 nm.
5. The QLED device of any of claims 1-3, further comprising at least one of a hole transport layer, an electron injection layer.
6. A preparation method of a QLED device is characterized by comprising the following steps:
providing an anode substrate, depositing a solution of a hole injection material on said anode substratePreparing a hole injection layer, wherein the hole injection material solution contains MoOxa/PANI nanocomposite;
depositing a quantum dot light-emitting layer and a cathode on the hole injection layer in sequence; or
Providing a cathode substrate, and depositing a quantum dot light-emitting layer on the cathode;
depositing a hole injection material solution on the quantum dot light-emitting layer to prepare a hole injection layer, and preparing an anode on the hole injection layer, wherein the hole injection material solution contains MoOxa/PANI nanocomposite;
wherein, the MoOxThe preparation method of the/PANI nano composite material comprises the following steps:
molybdate and aniline are provided and mixed under acidic condition to prepare Mo3O10(C6H5NH3)2·2H2An O nanowire precursor;
mixing the Mo3O10(C6H5NH3)2·2H2Dispersing the precursor of the O nanowire into deionized water, adding an initiator, and stirring under the acidic condition that the pH value is 4-5 to prepare MoOx/PANI nano composite material.
7. The method of manufacturing a QLED device according to claim 6, wherein the hole injection material solution is MoOxThe composite solution is formed by the PANI nano composite material and other hole injection materials.
8. The method of manufacturing a QLED device according to claim 6, wherein the hole injection material solution is MoOx/PANI nanocomposite solution.
9. The method of making a QLED device of claim 8, wherein the MoOxThe concentration of the/PANI nano composite material solution is 0.1-10 mg/ml.
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| CN101376745A (en) * | 2008-10-13 | 2009-03-04 | 复旦大学 | Method for synthesizing molybdena-polyaniline polyaniline composite single crystal nanowire |
| CN105374953A (en) * | 2015-12-24 | 2016-03-02 | Tcl集团股份有限公司 | QLED and preparation method thereof as well as luminous module and display device |
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| CN102484210B (en) * | 2009-10-27 | 2016-01-20 | 大日本印刷株式会社 | Containing the nano particle of transistion metal compound and manufacture method thereof, hole injection/transport layer ink and device and the manufacture method thereof with hole injection/transport layer |
| CN102086302B (en) * | 2009-12-04 | 2012-08-01 | 复旦大学 | Preparing method for molybdenum oxide - polyaniline composite nanowire and nanotube |
| CN103613759B (en) * | 2013-12-06 | 2015-10-28 | 东华大学 | A kind of MoO 3the preparation method of/polyaniline co-axial nano heterojunction |
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| CN101376745A (en) * | 2008-10-13 | 2009-03-04 | 复旦大学 | Method for synthesizing molybdena-polyaniline polyaniline composite single crystal nanowire |
| CN105374953A (en) * | 2015-12-24 | 2016-03-02 | Tcl集团股份有限公司 | QLED and preparation method thereof as well as luminous module and display device |
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