CN109410835B - Novel OLED drive circuit - Google Patents
Novel OLED drive circuit Download PDFInfo
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- CN109410835B CN109410835B CN201811471867.XA CN201811471867A CN109410835B CN 109410835 B CN109410835 B CN 109410835B CN 201811471867 A CN201811471867 A CN 201811471867A CN 109410835 B CN109410835 B CN 109410835B
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- 239000010409 thin film Substances 0.000 claims abstract description 59
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000006731 degradation reaction Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 229920001621 AMOLED Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a novel OLED driving circuit, which comprises thin film transistors T1, T2, T3, T4, T5, a capacitor C1 and an OLED; the control end of the thin film transistor T1 is connected with an n-level scanning signal, the source end is connected with the working voltage Vdata, and the drain end is connected with the control end of the T2, the drain end of the T5 and one end of the capacitor C1; the source end of the thin film transistor T2 is connected with the drain end of the T4, and the drain end is connected with the end B of the capacitor C1; the control end of the thin film transistor T3 is connected with an n-1 level scanning signal, the source end is connected with a reference voltage Vref, and the drain end is connected with the other end of the capacitor C1 and the anode of the OLED; the control end of the thin film transistor T4 is connected with a control signal Em, and the source end of the thin film transistor T4 is connected with a working voltage VDD; the control end of the thin film transistor T5 is connected with an n-1 level scanning signal, and the source end of the thin film transistor T5 is connected with the working voltage Vin; the cathode of the OLED is grounded. The driving current variation caused by the electrical degradation of the OLED and the TFT can be overcome at the same time, so that the effects of pixel compensation and panel brightness uniformity are achieved.
Description
Technical Field
The invention relates to the technical field of organic light emitting diodes, in particular to a novel OLED driving circuit.
Background
Organic LIGHT EMITTING Diodes (OLEDs) can be categorized into Passive Matrix driving (PMOLED) and Active Matrix driving (AMOLED) according to driving methods. The PMOLED does not emit light when data is not written, and emits light only during data writing. The driving mode has simple structure, low cost and easy design, and is mainly suitable for medium and small-sized displays.
Finally, AM represents Active Matrix, and is referred to as Passive Matrix, and refers to the driving mode of each OLED pixel. In the Passive Matrix, the control of each pixel is realized through a complex electrode network, so that the charge and discharge of a certain pixel are realized, and in general, the control mode of the Passive Matrix is relatively slow, and the control precision is slightly low. Unlike Passive Matrix, active Matrix has TFTs and capacitance layers added to each LED, so that when a certain row and a certain column are energized to activate the intersected pixel, the capacitance layers in the pixel can maintain a charged state between two refreshes, thereby realizing faster and more accurate pixel light emission control.
Since the voltage VDD on the AMOLED panel is connected between each pixel, a current flows through the voltage VDD when driving light emission. Considering that the VDD metal line itself has impedance, there is a voltage drop, so that VDD of each pixel may be different, resulting in a current difference between different pixels. In this way, the currents flowing through the OLEDs are different, and the brightness generated is also different, so that the AMOLED panel is not uniform. In addition, due to the influence of the process, the threshold voltages of the tfts in each pixel are different, and even if the same value of the voltage Vdata is provided, the currents generated by the tfts still have differences, which also causes non-uniformity of the panel. In addition, if the pixel compensation circuit is used to compensate the voltage, most of the compensation circuits are limited by too short a scanning time to affect the compensation effect.
The method adopts an OLED internal compensation circuit on a small size, but the conventional compensation circuit cannot compensate the negative drift condition of the TFT, so that the limitation of the compensation circuit exists.
Disclosure of Invention
Therefore, a new OLED driving circuit is needed to solve the problems that the existing OLED compensation circuit cannot compensate the TFT negative drift condition and the current variation caused by OLED degradation.
In order to achieve the above object, the present inventors provide a novel OLED driving circuit, which includes thin film transistors T1, T2, T3, T4, T5, a capacitor C1, and an OLED;
the control end of the thin film transistor T1 is connected with an n-level scanning signal, the source end is connected with the working voltage Vdata, and the drain end is connected with the control end of the T2, the drain end of the T5 and one end of the capacitor C1;
the source end of the thin film transistor T2 is connected with the drain end of the T4, and the drain end is connected with the end B of the capacitor C1;
the control end of the thin film transistor T3 is connected with an n-1 level scanning signal, the source end is connected with a reference voltage Vref, and the drain end is connected with the other end of the capacitor C1 and the anode of the OLED;
the control end of the thin film transistor T4 is connected with a control signal Em, and the source end of the thin film transistor T4 is connected with a working voltage VDD;
The control end of the thin film transistor T5 is connected with an n-1 level scanning signal, and the source end of the thin film transistor T5 is connected with the working voltage Vin;
The cathode of the OLED is grounded.
Further preferably, the thin film transistors T1, T2, T3, T4, and T5 have N-type structures.
Compared with the prior art, the driving circuit adopts five switches of the thin film transistors T1, T2, T3, T4 and T5, one capacitor C1 and one OLED to form a 5T1C framework, so that the operation time sequence of the driving circuit is divided into a reset phase, a compensation phase, a data writing phase and a light-emitting phase at one time, and the thin film transistor T2 is in an off state in the reset phase and the data writing phase, so that the OLED does not emit light, and the service life of the OLED is prolonged. In addition, the thin film transistor T2 is in an on state when light is emitted, and the current flowing through the OLED is irrelevant to the threshold voltage of the thin film transistor T1 and is irrelevant to the OLED device driving voltage (anode voltage), so that the driving current change caused by the electrical degradation of the OLED and the TFT can be overcome at the same time, and the effects of pixel compensation and panel brightness uniformity are achieved.
Drawings
FIG. 1 is a schematic circuit diagram of a novel OLED drive circuit according to an embodiment;
FIG. 2 is a timing diagram of a novel OLED drive circuit according to an embodiment;
fig. 3 is a schematic circuit diagram of the novel OLED driving circuit in the reset stage t1 according to the embodiment;
FIG. 4 is a schematic circuit diagram of the novel OLED driving circuit in the compensation stage t2 according to the embodiment;
FIG. 5 is a schematic circuit diagram of the novel OLED driving circuit in the data writing stage t3 according to the embodiment;
fig. 6 is a schematic circuit diagram of the novel OLED driving circuit in the light emitting stage t4 according to the embodiment;
Fig. 7 is a schematic diagram of the variation of the OLED anode voltage under the variation of the TFT Vth of the novel OLED driving circuit according to the embodiment.
Detailed Description
In order to describe the technical content, constructional features, achieved objects and effects of the technical solution in detail, the following description is made in connection with the specific embodiments in conjunction with the accompanying drawings.
Referring to fig. 1, the novel OLED driving circuit of the present embodiment includes thin film transistors T1, T2, T3, T4, T5, a capacitor C1, and an OLED; wherein, the thin film transistors T1, T2, T3, T4 and T5 are N-type structures.
The control end of the thin film transistor T1 is connected with an n-level scanning signal, the source end is connected with the working voltage Vdata, and the drain end is connected with the control end of the T2, the drain end of the T5 and one end of the capacitor C1;
the source end of the thin film transistor T2 is connected with the drain end of the T4, and the drain end is connected with the end B of the capacitor C1;
the control end of the thin film transistor T3 is connected with an n-1 level scanning signal, the source end is connected with a reference voltage Vref, and the drain end is connected with the other end of the capacitor C1 and the anode of the OLED;
the control end of the thin film transistor T4 is connected with a control signal Em, and the source end of the thin film transistor T4 is connected with a working voltage VDD;
The control end of the thin film transistor T5 is connected with an n-1 level scanning signal, and the source end of the thin film transistor T5 is connected with the working voltage Vin;
The cathode of the OLED is grounded.
The driving circuit adopts five switches of the thin film transistors T1, T2, T3, T4 and T5, one capacitor C1 and one OLED to form a 5T1C framework, so that the operation time sequence of the driving circuit is divided into a reset phase, a compensation phase, a data writing phase and a light-emitting phase at one time, and the OLED does not emit light because the thin film transistor T2 is in an off state in the reset phase and the data writing phase, and the service life of the OLED is prolonged. In addition, the thin film transistor T2 is in an on state when light is emitted, and the current flowing through the OLED is irrelevant to the threshold voltage of the thin film transistor T1 and is irrelevant to the OLED device driving voltage (anode voltage), so that the driving current change caused by the electrical degradation of the OLED and the TFT can be overcome at the same time, and the effects of pixel compensation and panel brightness uniformity are achieved. The specific principle is as follows:
Fig. 2 is a timing diagram of the novel OLED driving circuit according to the present embodiment, where the operation timing of the driving circuit is divided into four stages at a time, and the four stages are respectively: a reset phase t1, a compensation phase t2, a data writing phase t3, and a light emitting phase t4. Specifically, in the reset phase t1, the voltages at points a and B are mainly reset; in the compensation stage T2, VTh of the thin film transistor T1 is mainly extracted; in the data writing stage t3, the data signal is mainly written; in the light emitting stage t4, the driving voltage (anode voltage) of the OLED is extracted to realize OLED device compensation when driving the OLED device. The specific process of each stage is as follows:
fig. 3 is a schematic circuit diagram of the novel OLED driving circuit in a reset phase t1, where the reset phase t1: the scan (n-1) signal is high, the thin film transistors T3 and T5 are all turned on, the potential at the point A is Vin, the potential at the point B is Vref, wherein Vini-Vref is greater than the Vth of the TFT, the thin film transistor T2 is enabled to be turned on, and the reset of the potentials at the point A and the point B is completed at this stage.
Fig. 4 is a schematic circuit diagram of the novel OLED driving circuit in a compensation phase t2, where the compensation phase t2: the scan (n) and scan (n-1) have low potential, em is high potential, the thin film transistors T2 and T4 are turned on, the potential at the point A is Vin, the potential at the point B is changed, when the voltage difference between the point A and the point B is Vth, the thin film transistor T2 is turned off, and the voltage at the point B is Vini-Vth; at this time, it should be noted that the compensation method can be used for positive and negative shift of the thin film transistor T2 at the same time, for example, when vth= -1V of the thin film transistor T2, the point B potential will become vin+1v at this time, and if B is used for example, when vth=1v of the thin film transistor T2, the point B potential is Vin-1V at this time, and Vth extraction of the thin film transistor T1 is completed at this time.
Fig. 5 is a schematic circuit diagram of the novel OLED driving circuit in a data writing stage t3, where the data writing stage t3: the thin film transistor T1 is turned on, the potential at point a becomes Vdata, the potential at point B becomes 1/K1 (Vdata-Vin) +vin-Vth (due to capacitive coupling of C1), k1=c1/(c1+coled).
Fig. 6 is a schematic circuit diagram of the novel OLED driving circuit in a light emitting stage t4, where the light emitting stage t4: t2 and T4 are on, and the potential at each point changes as follows: since the OLED is in the light emitting phase at this time, the B-point potential is the OLED driving voltage v_oled, i.e., B: V_OLED; because of capacitive coupling, the point a voltage becomes a: vdata+VOLED- (1/K (Vdata-Vin) +vin-Vth), the result is that the potential at the point A is considered to be 100% coupled by the capacitance, i.e. there is no parasitic capacitance other than the capacitance C at the point A. The saturation region current formula I oled=1/2*k*(VGS_T2-VTh)2 is available, and the final driving current of the OLED device is: i oled =1/2K (Vdata-1/K1 (Vdata-Vin) +vin)/(2) (K is a parameter related to size, mobility of TFT, etc.), I oled is related to only the data signal and the reference voltage Vref, and is independent of vth_t1 and v_oled; thereby compensating for display irregularities caused by threshold voltage drift of the T1 transistor and variations in the driving voltage of the OLED device.
The schematic diagram of the variation of the anode voltage of the OLED under the variation of the Vth of the TFT of the novel OLED driving circuit shown in fig. 7, the 5T1C structure adopted by the novel OLED driving circuit has less influence on the anode voltage of the OLED due to the Vth drift of the TFT compared with the conventional 2T1C structure.
It should be noted that, although the foregoing embodiments have been described herein, the scope of the present invention is not limited thereby. Therefore, based on the innovative concepts of the present invention, alterations and modifications to the embodiments described herein, or equivalent structures or equivalent flow transformations made by the present description and drawings, apply the above technical solutions directly or indirectly to other relevant technical fields, all of which are included in the scope of protection of the present patent.
Claims (2)
1. The novel OLED driving circuit is characterized by comprising thin film transistors T1, T2, T3, T4, T5, a capacitor C1 and an OLED;
the control end of the thin film transistor T1 is connected with an n-level scanning signal, the source end is connected with the working voltage Vdata, and the drain end is connected with the control end of the T2, the drain end of the T5 and one end of the capacitor C1;
the source end of the thin film transistor T2 is connected with the drain end of the T4, and the drain end is connected with the end B of the capacitor C1;
the control end of the thin film transistor T3 is connected with an n-1 level scanning signal, the source end is connected with a reference voltage Vref, and the drain end is connected with the other end of the capacitor C1 and the anode of the OLED;
the control end of the thin film transistor T4 is connected with a control signal Em, and the source end of the thin film transistor T4 is connected with a working voltage VDD;
The control end of the thin film transistor T5 is connected with an n-1 level scanning signal, and the source end of the thin film transistor T5 is connected with the working voltage Vin;
the cathode of the OLED is grounded;
the operation sequence of the novel OLED driving circuit comprises four stages: a reset phase t1, a compensation phase t2, a data writing phase t3 and a light emitting phase t4;
Reset phase t1: the scan (n-1) signal is high, the thin film transistors T3 and T5 are all turned on, the potential at the point A is Vin, the potential at the point B is Vref, wherein Vini-Vref is greater than Vth of the TFT, and the reset of the potentials at the point A and the point B is completed at this stage;
compensation phase t2: the scan (n) and scan (n-1) have low potential, em is high potential, the thin film transistors T2 and T4 are turned on, the potential at the point A is Vin, the potential at the point B is changed, when the voltage difference between the point A and the point B is Vth, the thin film transistor T2 is turned off, the voltage at the point B is Vini-Vth, and the Vth extraction of the thin film transistor T1 is completed at the stage;
Data writing phase t3: the thin film transistor T1 is turned on, the potential at the point A becomes Vdata, the potential at the point B becomes 1/K1 (Vdata-Vin) +vin-Vth, K1=C1/(C1+C OLED);
Light emitting phase t4: the thin film transistors T2 and T4 are turned on, and the potential of the point B is OLED driving voltage V_OLED; because of capacitive coupling, the voltage at point A becomes Vdata+VOLED- (1/K (Vdata-Vin) +vin-Vth).
2. The novel OLED driving circuit of claim 1, wherein the thin film transistors T1, T2, T3, T4, T5 are N-type structures.
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CN110379369A (en) * | 2019-05-27 | 2019-10-25 | 福建华佳彩有限公司 | A kind of pixel compensation circuit and driving method |
CN110189705B (en) * | 2019-06-19 | 2021-02-05 | 京东方科技集团股份有限公司 | Pixel circuit, display panel and display device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20060113334A (en) * | 2005-04-29 | 2006-11-02 | 재단법인서울대학교산학협력재단 | Pixel structure using voltage programming-type for active matrix organic light emitting device |
CN102930822A (en) * | 2012-11-12 | 2013-02-13 | 京东方科技集团股份有限公司 | Pixel circuit and display device and driving method of pixel circuit |
CN107731168A (en) * | 2017-11-06 | 2018-02-23 | 深圳市华星光电半导体显示技术有限公司 | OLED pixel drive circuit, OLED display panel and driving method |
CN209133200U (en) * | 2018-12-04 | 2019-07-19 | 福建华佳彩有限公司 | A kind of novel OLED drive |
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KR20060113334A (en) * | 2005-04-29 | 2006-11-02 | 재단법인서울대학교산학협력재단 | Pixel structure using voltage programming-type for active matrix organic light emitting device |
CN102930822A (en) * | 2012-11-12 | 2013-02-13 | 京东方科技集团股份有限公司 | Pixel circuit and display device and driving method of pixel circuit |
CN107731168A (en) * | 2017-11-06 | 2018-02-23 | 深圳市华星光电半导体显示技术有限公司 | OLED pixel drive circuit, OLED display panel and driving method |
CN209133200U (en) * | 2018-12-04 | 2019-07-19 | 福建华佳彩有限公司 | A kind of novel OLED drive |
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