CN109408974B - Method for manufacturing power device - Google Patents
Method for manufacturing power device Download PDFInfo
- Publication number
- CN109408974B CN109408974B CN201811278057.2A CN201811278057A CN109408974B CN 109408974 B CN109408974 B CN 109408974B CN 201811278057 A CN201811278057 A CN 201811278057A CN 109408974 B CN109408974 B CN 109408974B
- Authority
- CN
- China
- Prior art keywords
- input
- matching circuit
- circuit
- output
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention is suitable for the technical field of power devices, and provides a preparation method of a power device, wherein the predistortion circuit and the impedance converter are integrated to form a monolithic microwave integrated circuit, and a high-linearity power device is realized by combining the internal matching design of a power chip, so that the problems of high power, insufficient linearity and difficult miniaturization of the power device designed by adopting a conventional method in high-efficiency application are effectively solved, the linearity of the power device is obviously improved, the circuit size is greatly reduced, and the volume and weight of component products such as a solid-state power amplifier of a communication electronic system can be effectively reduced.
Description
Technical Field
The invention belongs to the technical field of power device design, and particularly relates to a power device manufacturing method.
Background
With the rapid development of modern communication technology, wireless communication standards increase signal bandwidth, and a higher linearity requirement is provided for a power device playing a role in power amplification in a transmitter of a communication electronic system, meanwhile, a complex modulation technology brings about a baseband signal with a larger variation range, and the requirements of high power, high linearity, high efficiency and miniaturization of the communication electronic system, especially the power device in the transmitter, are simultaneously met.
For power devices, conventional methods for realizing single performance in high power, high linearity, high efficiency and miniaturization are generally mutually restricted and even contradicted, and it is difficult to realize high power, high linearity and high efficiency at the same time, which limits the improvement and development of the performance of the emission electronic system in the fields of communication and the like.
Disclosure of Invention
In view of the above, the embodiment of the invention provides a method for manufacturing a power device, so as to solve the problem that the power device in the prior art cannot simultaneously meet the requirements of high power, high linearity and miniaturization.
In order to solve the technical problems, the invention adopts the following technical scheme: a method of manufacturing a power device, comprising:
simulating the power chip to determine the output impedance and the input impedance of the power chip;
designing an input matching circuit at the input end of the power chip according to the input impedance, wherein the output end of the input matching circuit is connected with the input end of the power chip, and the input matching circuit comprises an impedance converter;
designing an output matching circuit at the output end of the power chip according to the output impedance, wherein the input end of the output matching circuit is connected with the output end of the power chip;
performing nonlinear characteristic simulation on the power chip provided with the input matching circuit and the output matching circuit;
designing a predistortion circuit according to the nonlinear characteristics of the power chip, wherein an output end of the predistortion circuit is connected with an input end of the input matching circuit, and the predistortion circuit and the impedance converter are integrated to form a monolithic microwave integrated circuit;
and sintering the monolithic microwave integrated circuit, the input matching circuit, the power chip and the output matching circuit in a tube shell, and packaging.
Further, the input matching circuit comprises an input pre-matching circuit and a Wilkison plane circuit.
Further, the input pre-matching circuit is realized by a T-shaped network formed by a key alloy wire and a ceramic substrate capacitor.
Further, the input impedance of the input matching circuit is 50 ohms.
Further, the output impedance of the output matching circuit is 50 ohms.
Further, the substrate of the monolithic microwave integrated circuit is GaAs or GaN.
Further, the output impedance and the input impedance of the predistortion circuit are both 50 ohms.
Further, the monolithic microwave integrated circuit, the input matching circuit, the power chip and the output matching circuit are sintered in a tube shell by adopting gold-tin solder.
Further, the monolithic microwave integrated circuit, the input matching circuit, the power chip and the output matching circuit are all connected by adopting a bond alloy wire.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: the invention discloses a preparation method of a power device, which integrates a predistortion circuit and an impedance converter to form a monolithic microwave integrated circuit, combines the internal matching design of a power chip to realize a high-linearity power device, effectively solves the problems of insufficient linearity and difficult miniaturization of the power device designed by adopting a conventional method when the power device is applied in high power and high efficiency, obviously improves the linearity of the power device, greatly reduces the circuit size, and can effectively reduce the volume and weight of component products such as a solid-state power amplifier of a communication electronic system.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a logic flow diagram of a method for manufacturing a power device according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a power device according to an embodiment of the present invention.
In the figure: 1. a predistortion circuit; 2. an input matching circuit; 3. a power chip; 4. and outputting a matching circuit.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to illustrate the technical scheme of the invention, the following description is made by specific examples.
As shown in fig. 1 and fig. 2, a logic flow diagram of a power device manufacturing method according to an embodiment of the present invention includes:
in step S101, the power chip 3 is simulated to determine the output impedance and the input impedance of the power chip 3.
In step S102, an input matching circuit 2 is designed at the input end of the power chip 3 according to the input impedance, wherein the output end of the input matching circuit 2 is connected to the input end of the power chip 3, and the input matching circuit 2 includes an impedance transformer.
Step S103, designing an output matching circuit 4 at the output end of the power chip 3 according to the output impedance, wherein the input end of the output matching circuit 4 is connected with the output end of the power chip 3.
Step S104, a nonlinear characteristic simulation is performed on the power chip 3 provided with the input matching circuit 2 and the output matching circuit 4.
In one embodiment of the invention, the simulation of the overall nonlinear characteristic is performed in combination with a large signal model, a bonding wire model, a shell model and an input-output matching circuit 4 of the power device.
Step S105, designing the predistortion circuit 1 according to the nonlinear characteristic of the power chip 3, wherein an output end of the predistortion circuit 1 is connected to an input end of the input matching circuit 2, and integrating the predistortion circuit 1 and the impedance converter to form a monolithic microwave integrated circuit.
In one embodiment of the invention, the output impedance and the input impedance of the predistortion circuit 1 are both 50 ohms.
And S106, sintering the monolithic microwave integrated circuit, the input matching circuit 2, the power chip 3 and the output matching circuit 4 in a tube shell, and packaging.
The method integrates the predistortion circuit 1 and the impedance converter to form a monolithic microwave integrated circuit, combines the matching design in the power chip 3 to realize a high-linearity power device, effectively solves the problems of insufficient linearity and difficult miniaturization of the power device designed by adopting the conventional method when the power device is applied in high power and high efficiency, remarkably improves the linearity of the power device, greatly reduces the size of the circuit, and can effectively reduce the volume and weight of component products such as a solid-state power amplifier of a communication electronic system.
In one embodiment of the present invention, the input matching circuit 2 includes an input pre-matching circuit and a wilkinson plane circuit, the input pre-matching circuit is implemented by a T-type network formed by a key alloy wire and a ceramic substrate capacitor, and the input impedance of the input matching circuit 2 is 50 ohms.
According to the input impedance of the power chip 3, a key alloy wire and a ceramic substrate capacitor form a T-shaped network to realize the input of the power chip 3 into a pre-matching circuit, offset the imaginary part of the input impedance and improve the real part impedance of the input impedance of the power chip 3; the function of impedance power distribution and impedance transformation is realized by using a wilkinson plane circuit, and the input impedance of the power chip 3 is matched to 50 ohms together with an input pre-matching circuit.
In one embodiment of the invention, the output impedance of the output matching circuit 4 is 50 ohms. According to the output impedance of the power chip 3, the power synthesis of 2-4 power chips 3 is realized in a Wilkison plane circuit form, and the output impedance is increased to 50 ohms from the low resistance (usually a few ohms) of the chip end. The Wilkison power divider circuit is provided with a middle band balance resistor and is made of a ceramic substrate with a conventional dielectric constant.
In one embodiment of the invention, the substrate of the monolithic microwave integrated circuit is GaAs or GaN. The single-chip microwave integrated circuit of GaAs or GaN material comprises a predistortion circuit 1 unit and a lambda/4 impedance converter, wherein the predistortion circuit 1 unit realizes the function of correcting the nonlinear characteristic of a power device in advance, improves the linearity of the power device under high power output, and the input and output impedance of the predistortion circuit 1 unit is 50 ohms. The predistortion circuit 1 unit and the input lambda/4 impedance converter are integrated in the same monolithic microwave integrated circuit and are realized by using a GaAs or GaN monolithic microwave integrated circuit process.
In one embodiment of the invention, monolithic microwave integrated circuit, input matching circuit 2, power chip 3 and output matching circuit 4 are sintered in a package using gold-tin solder. The monolithic microwave integrated circuit, the input matching capacitor, the power chip 3 and the output matching circuit 4 are all sintered in the tube shell by adopting gold-tin solder. The monolithic microwave integrated circuit, the input matching capacitor, the power chip 3 and the output matching circuit 4 are all connected by adopting a key alloy wire, and the input end of the inner cavity of the tube shell is connected with the monolithic microwave integrated circuit and the output end of the inner cavity of the tube shell is connected with the output matching circuit 4 by adopting a key alloy belt. Finally, the power device with the functions of impedance matching and high linearity is realized, a metal ceramic microstrip structure tube shell is adopted, and parallel seam welding is adopted for sealing, so that the air tightness of the device is ensured to be good. The input and output impedance of the packaged power device is 50 ohms.
The invention utilizes the GaAs or GaN monolithic microwave integrated circuit form to integrate the function of the predistortion circuit 1 and the impedance transformation function, combines the internal matching design of the power chip 3 to realize a high-linearity power device, effectively solves the problems of insufficient linearity and difficult miniaturization of the microwave GaAs or GaN power device designed by adopting the conventional method when in high-power and high-efficiency application, obviously improves the linearity of the power device, greatly reduces the circuit size, directly applies the device to a standard 50 ohm electronic system, and can effectively reduce the volume and weight of component products such as a solid-state power amplifier of the communication electronic system. The power device designed and manufactured by the design method is suitable for airtight packaging by a conventional parallel seam welding process, and is beneficial to improving the application reliability of the device.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.
Claims (9)
1. The preparation method of the power device is characterized by comprising the following steps:
simulating the power chip to determine the output impedance and the input impedance of the power chip;
designing an input matching circuit at the input end of the power chip according to the input impedance, wherein the output end of the input matching circuit is connected with the input end of the power chip, and the input matching circuit comprises an impedance converter;
designing an output matching circuit at the output end of the power chip according to the output impedance, wherein the input end of the output matching circuit is connected with the output end of the power chip;
performing nonlinear characteristic simulation on the power chip provided with the input matching circuit and the output matching circuit;
designing a predistortion circuit according to the nonlinear characteristics of the power chip, wherein an output end of the predistortion circuit is connected with an input end of the input matching circuit, the predistortion circuit performs pre-correction on the nonlinear characteristics of the power device, and the predistortion circuit and the impedance converter are integrated to form a single-chip microwave integrated circuit;
and sintering the monolithic microwave integrated circuit, the input matching circuit, the power chip and the output matching circuit in a tube shell, and packaging.
2. The method of claim 1, wherein the input matching circuit comprises an input pre-matching circuit and a wilkinson plane circuit.
3. The method for manufacturing a power device according to claim 2, wherein the input pre-matching circuit is implemented by a T-network formed by a bond wire and a ceramic substrate capacitor.
4. The method of claim 1, wherein the input matching circuit has an input impedance of 50 ohms.
5. The method of claim 1, wherein the output matching circuit has an output impedance of 50 ohms.
6. The method of claim 1, wherein the substrate of the monolithic microwave integrated circuit is GaAs or GaN.
7. The method of claim 1, wherein the predistortion circuit has an output impedance and an input impedance of 50 ohms.
8. The method of claim 1, wherein the monolithic microwave integrated circuit, the input matching circuit, the power chip, and the output matching circuit are sintered in a package using gold-tin solder.
9. The method of claim 1, wherein the monolithic microwave integrated circuit, the input matching circuit, the power chip and the output matching circuit are all connected by bond wires.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811278057.2A CN109408974B (en) | 2018-10-30 | 2018-10-30 | Method for manufacturing power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811278057.2A CN109408974B (en) | 2018-10-30 | 2018-10-30 | Method for manufacturing power device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109408974A CN109408974A (en) | 2019-03-01 |
| CN109408974B true CN109408974B (en) | 2023-05-19 |
Family
ID=65469861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811278057.2A Active CN109408974B (en) | 2018-10-30 | 2018-10-30 | Method for manufacturing power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109408974B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649896B (en) * | 2019-10-25 | 2023-06-27 | 电子科技大学 | Multi-band analog predistortion circuit applied to wireless communication |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105372494A (en) * | 2015-10-29 | 2016-03-02 | 中国科学院紫金山天文台 | 2ghz bandwidth real-time fft frequency spectrograph system |
| CN107517039A (en) * | 2017-07-24 | 2017-12-26 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Millimeter wave GaN power amplifier radio frequency distortion linearizing devices |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006504318A (en) * | 2002-10-22 | 2006-02-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Predistortion linearization method and electronic apparatus |
| EP2297847B1 (en) * | 2008-05-27 | 2017-03-08 | Hollinworth Fund , L.L.C. | Rf power amplifiers with linearization |
| CN201674523U (en) * | 2010-03-25 | 2010-12-15 | 深圳国人通信有限公司 | Radio frequency predistortion circuit, power amplifying device and repeater |
| CN202713234U (en) * | 2012-07-16 | 2013-01-30 | 深圳市西瑞克斯通信设备有限公司 | Broadband adapting radio-frequency power amplification device |
| CN106253864A (en) * | 2016-08-11 | 2016-12-21 | 宜确半导体（苏州）有限公司 | A kind of radio-frequency power amplifier |
| CN106656101A (en) * | 2017-02-08 | 2017-05-10 | 江苏博普电子科技有限责任公司 | Anti-oscillation broadband matching circuit of high power microwave device synthesized by multiple GaN chips |
| CN207743941U (en) * | 2017-05-16 | 2018-08-17 | 云南大学 | Novel analog predistortion circuit |
| CN207638650U (en) * | 2017-12-11 | 2018-07-20 | 深圳国人通信股份有限公司 | Integrated power amplifier module structure |
-
2018
- 2018-10-30 CN CN201811278057.2A patent/CN109408974B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105372494A (en) * | 2015-10-29 | 2016-03-02 | 中国科学院紫金山天文台 | 2ghz bandwidth real-time fft frequency spectrograph system |
| CN107517039A (en) * | 2017-07-24 | 2017-12-26 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Millimeter wave GaN power amplifier radio frequency distortion linearizing devices |
Non-Patent Citations (3)
| Title |
|---|
| S波段GaN MMIC Doherty功率放大器;任健;要志宏;;太赫兹科学与电子信息学报(第02期);全文 * |
| 固态微波电子学的新进展;赵正平;;半导体技术(第01期);全文 * |
| 线性化Doherty功率放大器设计;耿知;郭伟;;信息技术(第03期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109408974A (en) | 2019-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10541653B2 (en) | Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture | |
| US10742178B2 (en) | Broadband power transistor devices and amplifiers and methods of manufacture thereof | |
| CN108512514B (en) | Multistage RF amplifier device | |
| US11522499B2 (en) | Integrated multiple-path power amplifier | |
| US10742174B2 (en) | Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture | |
| US11146220B2 (en) | Amplifier devices with phase distortion compensation and methods of manufacture thereof | |
| US20210175866A1 (en) | Amplifiers and manufacture method thereof | |
| US11705872B2 (en) | Broadband power transistor devices and amplifiers with output T-match and harmonic termination circuits and methods of manufacture thereof | |
| US20160173039A1 (en) | Amplifiers with a short phase path, packaged rf devices for use therein, and methods of manufacture thereof | |
| US11444586B2 (en) | RF amplifiers with input-side fractional harmonic resonator circuits | |
| US20200186097A1 (en) | Integrally-formed multiple-path power amplifier with on-die combining node structure | |
| WO2024067226A1 (en) | Balanced radio frequency power amplifier, radio frequency front-end module, and electronic device | |
| US11223336B2 (en) | Power amplifier integrated circuit with integrated shunt-l circuit at amplifier output | |
| CN109408974B (en) | Method for manufacturing power device | |
| US20230216452A1 (en) | Power transistor devices and amplifiers with input-side harmonic termination circuits | |
| CN102832145B (en) | Packaging method of high-frequency internal matching power device | |
| CN102340290A (en) | Stabilizing network suitable for high-frequency power device | |
| CN107359863B (en) | Integrated amplifier | |
| CN107293521B (en) | method for realizing 50 omega impedance matching of L-band device | |
| CN206432962U (en) | Surface-mount type ultra wide band limiter | |
| CN204481766U (en) | A kind of amplifier of miniaturization | |
| US11190145B2 (en) | Power amplifier with integrated bias circuit having multi-point input | |
| CN208063182U (en) | A kind of ultra wide band miniaturization four-way transmitter | |
| WO2023236772A1 (en) | Power amplifier module and manufacturing method therefor | |
| EP3664288A1 (en) | Integrated multi-section power splitter, and multiple-path amplifiers with integrated multi-section power splitters |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |