CN109405344A - A kind of direction of heat transfer control device and control method - Google Patents
A kind of direction of heat transfer control device and control method Download PDFInfo
- Publication number
- CN109405344A CN109405344A CN201811328122.8A CN201811328122A CN109405344A CN 109405344 A CN109405344 A CN 109405344A CN 201811328122 A CN201811328122 A CN 201811328122A CN 109405344 A CN109405344 A CN 109405344A
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- semiconductor
- type semiconductor
- cold
- vocs
- cooling assembly
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- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 146
- 239000012855 volatile organic compound Substances 0.000 claims abstract description 61
- 238000010438 heat treatment Methods 0.000 claims abstract description 52
- 238000002336 sorption--desorption measurement Methods 0.000 claims abstract description 39
- 238000001816 cooling Methods 0.000 claims abstract description 36
- 238000003795 desorption Methods 0.000 claims abstract description 16
- 239000003566 sealing material Substances 0.000 claims abstract description 13
- 238000012544 monitoring process Methods 0.000 claims abstract description 7
- 238000005057 refrigeration Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 239000002699 waste material Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Separation Of Gases By Adsorption (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The invention discloses a kind of direction of heat transfer control device and methods, including semiconductor heating cooling assembly, cold source, VOCs adsorption-desorption pipe.Semiconductor heating cooling assembly includes PN semiconductor layer, backing, cold, thermally conductive sheet, sealing material.PN semiconductor layer includes P-type semiconductor, N-type semiconductor and baffle.Cold source, semiconductor heating cooling assembly and VOCs adsorption-desorption pipe are closely packed together.In the trapping of VOCs superfreeze, semiconductor heating cooling assembly does not access electric current, and the temperature of cold source is transmitted to VOCs adsorption-desorption pipe by semiconductor heating cooling assembly.In thermal desorption, VOCs adsorption-desorption pipe and semiconductor heating cooling assembly all access power work, and the temperature of VOCs adsorption-desorption pipe and cold source does not influence mutually.The present invention realizes that effective control to the cold-trap in VOCs on-line monitoring system and the direction of heat transfer between thermal desorption device improves the temperature uniformity of resolution component to reduce energy waste.
Description
Technical field
The invention belongs to environmental monitorings, cooling and warming control technology field, are related to heat transmitting control technology more particularly to one
Kind uses the direction of heat transfer control device and control method of semiconductor subassembly.
Background technique
Semiconductor refrigerating technology is based on pa note that effect, and N-type semiconductor unit and P-type semiconductor units alternately arrange,
Orientation is passed through direct current and constantly can actively be enriched with the heat in semiconductor junctions to a direction, reaches while heating refrigeration
Purpose.
In atmospheric volatile organic compounds (VOCs) on-line monitoring system, using can refrigeration reach -150 DEG C it is below super
The refrigeration source that cryotrap is trapped as ultralow temperature.VOCs is trapped by superfreeze in atmosphere, and heating desorption is needed to come out
Can be carried out analysis, to make target compound quickly enter analysis system completely, it is necessary to by VOCs trapping cavity temperature rapidly from-
150 DEG C rise to 100 DEG C, gasify rapidly so that trapping intracavitary compound, and rapid heating condition needs to complete in 1-2 seconds, therefore
It is necessary to which heating desorption device is close together with cryotrap, increases the thermal efficiency and carry out In Situ Heating, but due to heating phase
To temperature height, the heat of generation is big, and biggish workload can be brought to ultralow temperature cold trap, ultralow temperature cold trap is made to be difficult to keep good
Good operating status, influences the stability and uniformity of ultralow temperature cold trap temperature, is difficult to reach the temperature of requirement in the stipulated time,
Ultralow temperature cold trap can also bring larger load to heating device simultaneously, cause larger energy waste.
It is therefore desirable to provide a kind of direction of heat transfer control technology, the heat transmitting between cold-trap and thermal desorption device is controlled
Direction.
Summary of the invention
In order to overcome the above-mentioned deficiencies of the prior art, the object of the present invention is to provide a kind of direction of heat transfer control device and
Control method can be used for controlling the cold-trap in VOCs on-line monitoring system and the direction of heat transfer between thermal desorption device, reduce
Energy waste improves the heat transference efficiency and temperature uniformity of resolution component.
The technical scheme is that
A kind of direction of heat transfer control device mainly includes semiconductor heating cooling assembly, cold source, VOCs adsorption-desorption
Pipe.Semiconductor heating cooling assembly includes PN semiconductor layer, backing, cold, thermally conductive sheet, sealing material (such as silica gel).PN is partly led
Body layer includes P-type semiconductor, N-type semiconductor and baffle.Backing, cold and thermally conductive sheet are by thermally conductive good but nonconducting spy
Different material (such as ceramics) is made.
P-type semiconductor and N-type semiconductor are alternately arranged in the PN semiconductor layer, are connected two p-types by baffle and are partly led
Body and N-type semiconductor, so that side electric current flows to N-type semiconductor by P-type semiconductor, other side electric current is by N-type semiconductor
Flow to P-type semiconductor.The semiconductor heating cooling assembly includes multiple PN semiconductor layers, multiple backings, cold multiple, multiple
Thermally conductive sheet, the required temperature difference is bigger, and the piece number of use is more；It is separated between multiple PN semiconductor layers by thermally conductive sheet, multiple PN half
The both ends of conductor layer are fitted closely by cold and backing respectively.The PN semiconductor layer outermost (both ends), electric current are partly led by p-type
The side that body flows to N-type semiconductor is backing, and electric current is cold by the side that N-type semiconductor flows to P-type semiconductor.Use high temperature resistant
Material (sealing material) will seal between each PN semiconductor layer and cold, backing, thermally conductive sheet, i.e. the ground of outmost turns ingress of air
Side's sealing.Multiple PN semiconductor layers are parallel relationship.PN semiconductor layer quantity is determined by the required temperature difference, when it is implemented, 4 layers can
The temperature difference is set to reach 110 degree, 6 layers of temperature difference are up to 140 degree.
The cold source, semiconductor heating cooling assembly and VOCs adsorption-desorption pipe are closely packed together, semiconductor heating refrigeration
Component is cold close to the side of cold source, and semiconductor heating cooling assembly is backing close to the side of VOCs adsorption-desorption pipe, cold
Source continues working.
The present invention also provides a kind of direction of heat transfer control methods, control VOCs using above-mentioned direction of heat transfer control device
The direction of heat transfer between cold-trap and thermal desorption device in on-line monitoring system；Specifically, it is trapped in VOCs superfreeze
When, semiconductor heating cooling assembly no power (not accessing power supply), so that the temperature of cold source passes through thermally conductive good semiconductor system
Refrigeration heat component is transmitted to VOCs adsorption-desorption pipe, and VOCs adsorption-desorption pipe does not heat at this time, and sink temperature, VOCs are reached in pipe
Trapping is adsorbed in pipe.In thermal desorption, VOCs adsorption-desorption pipe and semiconductor heating cooling assembly all access power work,
VOCs adsorption-desorption pipe is heated to setting high temperature, and semiconductor heating cooling assembly accesses after power supply close to VOCs adsorption-desorption pipe
Side be backing, generate thermal temperature increase, close to cold source side be cold, absorb thermal temperature reduce.So that
Interacting for the temperature of VOCs adsorption-desorption pipe and cold source is preferably minimized.
The present invention controls VOCs on-line monitoring due to taking above technical scheme, by setting direction of heat transfer control device
The direction of heat transfer between cold-trap and thermal desorption device in system improves the temperature of resolution component to reduce energy waste
Uniformity.Compared with prior art, the invention has the following advantages that
1, the present invention is due to using multiple PN semiconductor layers, and cooling and warming step by step, the cold end of upper level is as next stage
Hot end which thereby enhances the cold and hot temperature difference of semiconductor refrigerating heating component so that the temperature of every next stage is all lower.
2, the present invention is since semiconductor refrigerating heating component is using thermally conductive good material, so that semiconductor refrigerating heating group
Part when not working can quick transition temperature, VOCs adsorption-desorption pipe is quickly reduced to sink temperature.
3, the present invention is due to separating cold source and VOCs adsorption-desorption pipe, VOCs absorption solution using semiconductor refrigerating heating component
When suction pipe heating desorption, semiconductor refrigerating heats component operation, and backing keeps high temperature, cold holding low temperature, so that VOCs is adsorbed
The temperature of desorption tube heating will not be transmitted to cold source, and the low temperature of cold source will not influence VOCs adsorption-desorption pipe, greatly reduce
The workload of cold source and VOCs adsorption-desorption pipe, reduces the heating time of VOCs adsorption-desorption pipe, so that VOCs absorption solution
Suction pipe temperature is uniform, is not in the case where side temperature in close refrigeration source is lower than VOCs adsorption-desorption pipe bulk temperature, makes
The VOCs adsorbed in must managing can be desorbed simultaneously.
4, the present invention is due to being sealed in cold, heat for the PN semiconductor layer of semiconductor refrigerating heating component using sealing material
In piece and thermally conductive sheet, so that will not condense to burn PN half because of the aqueous vapor in ingress of air in PN semiconductor layer when refrigeration
Conductor element.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of direction of heat transfer control device provided by the invention；
Wherein, 1 is cold source, and 2 heat component for semiconductor refrigerating, and 3 be VOCs adsorption-desorption pipe.
Fig. 2 is the structural schematic diagram of semiconductor heating cooling assembly provided in an embodiment of the present invention；
Wherein, 21 be PN semiconductor layer；22 be cold；23 be backing；24 be thermally conductive sheet；25 be sealing material；211 be P
Type semiconductor；212 be N-type semiconductor；213 be baffle.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawings and examples, but do not limit the invention in any way
Range.
In the embodiment of the present invention, as shown in Figure 1, a kind of direction of heat transfer control device mainly includes cold source 1, semiconductor system
Refrigeration heat component 2, VOCs adsorption-desorption pipe 3.
As shown in Fig. 2, semiconductor heating cooling assembly 2 include PN semiconductor layer 21, cold 22, backing 23, thermally conductive sheet 24,
Sealing material 25.PN semiconductor layer 21 includes P-type semiconductor 211, N-type semiconductor 212 and baffle 213.Backing 23, cold 22
It is made with thermally conductive sheet 24 of thermally conductive good but nonconducting special material.
P-type semiconductor 211 and N-type semiconductor 212 are alternately arranged in the PN semiconductor layer 21, are connected by baffle 213
Two P-type semiconductors 211 and N-type semiconductor 212, so that side electric current flows to N-type semiconductor 212 by P-type semiconductor 211,
Other side electric current flows to P-type semiconductor 211 by N-type semiconductor 212.The semiconductor heating cooling assembly 2 includes multiple PN
Semiconductor layer 21, backing 23, cold 22, thermally conductive sheet 24 are separated between multiple PN semiconductor layers 21, multiple PN by thermally conductive sheet 24
21 both ends of semiconductor layer are fitted closely by cold 22 and backing 23.21 outermost of PN semiconductor layer, electric current is by P-type semiconductor
211 sides for flowing to N-type semiconductor 212 are backing 23, and electric current is by the side that N-type semiconductor 212 flows to P-type semiconductor 211
Cold 22.It will be sealed between each PN semiconductor layer 21 and cold 22, backing, thermally conductive sheet 24 with high temperature sealing material 25.It is more
A PN semiconductor layer 21 is parallel relationship.21 quantity of PN semiconductor layer is determined by the required temperature difference.
The cold source 1, semiconductor heating cooling assembly 2 and VOCs adsorption-desorption pipe 3 are successively closely packed together, semiconductor system
Refrigeration heat component 2 close to the side of cold source be cold 22, semiconductor heating cooling assembly 2 close to VOCs adsorption-desorption pipe 3 one
Side is backing 23, and cold source 1 continues working.In the trapping of VOCs superfreeze, semiconductor heating cooling assembly 2 does not access electricity
The temperature of stream, cold source 1 is transmitted to VOCs adsorption-desorption pipe 3 by thermally conductive good semiconductor heating cooling assembly 2, at this time VOCs
Adsorption-desorption pipe 3 does not heat, and sink temperature is reached in pipe, and VOCs trapping is adsorbed in pipe.In thermal desorption, VOCs adsorption-desorption
Pipe 3 and semiconductor heating cooling assembly 2 all access power work, and VOCs adsorption-desorption pipe 3 is heated to setting high temperature, semiconductor
The side of close VOCs adsorption-desorption pipe 3 is backing 23 after the heating access power supply of cooling assembly 2, generates thermal temperature raising, leans on
The side of nearly cold source 1 is cold 22, and absorbing thermal temperature reduces.So that the temperature of VOCs adsorption-desorption pipe 3 and cold source 2 is not
It can interact.
It should be noted that the purpose for publicizing and implementing example is to help to further understand the present invention, but the skill of this field
Art personnel, which are understood that, not to be departed from the present invention and spirit and scope of the appended claims, and various substitutions and modifications are all
It is possible.Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope of protection of present invention is with claim
Subject to the range that book defines.
Claims (8)
1. a kind of direction of heat transfer control device, including semiconductor heating cooling assembly, cold source, VOCs adsorption-desorption pipe；Cold source,
Semiconductor heating cooling assembly and VOCs adsorption-desorption pipe successively abut together；
Semiconductor heating cooling assembly includes PN semiconductor layer, backing, cold, thermally conductive sheet, sealing material；
PN semiconductor layer includes P-type semiconductor, N-type semiconductor and baffle；P-type semiconductor and N-type semiconductor are alternately arranged；By
Baffle connects P-type semiconductor and N-type semiconductor, so that side electric current flows to N-type semiconductor, the other side by P-type semiconductor
Electric current flows to P-type semiconductor by N-type semiconductor；Electric current is backing, electric current by the side that P-type semiconductor flows to N-type semiconductor
It is cold by the side that N-type semiconductor flows to P-type semiconductor；
The semiconductor heating cooling assembly is cold close to the side of cold source；Semiconductor heating cooling assembly is adsorbed close to VOCs
The side of desorption tube is backing；
Backing, cold and thermally conductive sheet are made of thermally conductive good but nonconducting special material.
2. direction of heat transfer control device as described in claim 1, characterized in that the PN in the semiconductor heating cooling assembly
Semiconductor layer, backing, cold and thermally conductive sheet are multiple；It is separated between multiple PN semiconductor layers by thermally conductive sheet；Multiple PN half
The both ends of conductor layer are fitted closely by cold and backing respectively.
3. direction of heat transfer control device as claimed in claim 2, characterized in that multiple PN semiconductor layers are to be connected in parallel；PN
The quantity of semiconductor layer is determined according to the required temperature difference.
4. direction of heat transfer control device as described in claim 1, characterized in that PN semiconductor layer and cold, backing, thermally conductive sheet
Between be all made of sealing material and be sealed.
5. direction of heat transfer control device as claimed in claim 4, characterized in that sealing material uses heat-resisting material.
6. direction of heat transfer control device as described in claim 1, characterized in that sealing material uses silica gel.
7. direction of heat transfer control device as described in claim 1, characterized in that backing, cold and thermally conductive sheet are all made of thermally conductive
Good but nonconducting ceramic material.
8. a kind of direction of heat transfer control method, in VOCs on-line monitoring system, by the way that direction of heat transfer control device is arranged,
Control the direction of heat transfer between cold-trap and thermal desorption device；The direction of heat transfer control device includes semiconductor heating refrigeration
Component, cold source and VOCs adsorption-desorption pipe；
Include the following steps:
1) cold source, semiconductor heating cooling assembly and VOCs adsorption-desorption pipe are successively abutted together；Semiconductor heating refrigeration train
Part includes PN semiconductor layer, backing, cold, thermally conductive sheet, sealing material；PN semiconductor layer includes P-type semiconductor, N-type semiconductor
And baffle；
2) P-type semiconductor and N-type semiconductor are alternately arranged；P-type semiconductor and N-type semiconductor are connected by baffle, so that one
Side electric current flows to N-type semiconductor by P-type semiconductor, and other side electric current flows to P-type semiconductor by N-type semiconductor；Electric current is by P
The side that type semiconductor flows to N-type semiconductor is backing, and electric current is cold by the side that N-type semiconductor flows to P-type semiconductor；
3) multiple PN semiconductor layers are connected in parallel；The both ends of each PN semiconductor layer are fitted closely by cold and backing respectively；
PN semiconductor layer and cold, backing are all made of sealing material between thermally conductive sheet and are sealed；
4) it when VOCs superfreeze traps, performs the following operations:
Semiconductor heating cooling assembly does not access electric current；The temperature of cold source is transmitted to VOCs by semiconductor heating cooling assembly and inhales
Attached desorption tube；
VOCs adsorption-desorption pipe does not heat at this time, and sink temperature is reached in pipe, and VOCs trapping is adsorbed in pipe；
5) it in thermal desorption, performs the following operations:
VOCs adsorption-desorption pipe and semiconductor heating cooling assembly all access power supply, in running order；
Heat VOCs adsorption-desorption pipe；
The side of close VOCs adsorption-desorption pipe is backing after semiconductor heating cooling assembly access power supply, generates thermal temperature liter
It is high；It is cold close to the side of cold source, absorbing thermal temperature reduces；So that the temperature of VOCs adsorption-desorption pipe and cold source is mutual
It does not influence mutually；
Through the above steps, the control of direction of heat transfer is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811328122.8A CN109405344B (en) | 2018-11-08 | 2018-11-08 | Heat transfer direction control device and control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811328122.8A CN109405344B (en) | 2018-11-08 | 2018-11-08 | Heat transfer direction control device and control method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109405344A true CN109405344A (en) | 2019-03-01 |
| CN109405344B CN109405344B (en) | 2023-11-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811328122.8A Active CN109405344B (en) | 2018-11-08 | 2018-11-08 | Heat transfer direction control device and control method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111759275A (en) * | 2020-06-11 | 2020-10-13 | 煦普生物技术（珠海）有限公司 | Small animal imaging device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6076357A (en) * | 1998-12-18 | 2000-06-20 | Battele Memorial Institute | Thermoelectric cold trap |
| KR20050061655A (en) * | 2003-12-18 | 2005-06-23 | 가부시키가이샤 세이부 기켄 | Rotary type gas adsorption concentration device |
| US20050236056A1 (en) * | 2002-12-09 | 2005-10-27 | Waters Investments Limited | Peltier based freeze-thaw valves and method of use |
| CN102636595A (en) * | 2012-04-13 | 2012-08-15 | 延边大学 | Continuous gas in-tube solid phase microextraction device combined with gas chromatography for use |
| US20130061756A1 (en) * | 2011-09-09 | 2013-03-14 | Industrial Technology Research Institute | Adsorption unit, adsortion device, and method for regenerating thereof |
| CN104458350A (en) * | 2014-12-18 | 2015-03-25 | 天津理工大学 | Gas capture concentration device and working method thereof for improving gas measurement sensitivity |
-
2018
- 2018-11-08 CN CN201811328122.8A patent/CN109405344B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6076357A (en) * | 1998-12-18 | 2000-06-20 | Battele Memorial Institute | Thermoelectric cold trap |
| US20050236056A1 (en) * | 2002-12-09 | 2005-10-27 | Waters Investments Limited | Peltier based freeze-thaw valves and method of use |
| KR20050061655A (en) * | 2003-12-18 | 2005-06-23 | 가부시키가이샤 세이부 기켄 | Rotary type gas adsorption concentration device |
| US20130061756A1 (en) * | 2011-09-09 | 2013-03-14 | Industrial Technology Research Institute | Adsorption unit, adsortion device, and method for regenerating thereof |
| CN102636595A (en) * | 2012-04-13 | 2012-08-15 | 延边大学 | Continuous gas in-tube solid phase microextraction device combined with gas chromatography for use |
| CN104458350A (en) * | 2014-12-18 | 2015-03-25 | 天津理工大学 | Gas capture concentration device and working method thereof for improving gas measurement sensitivity |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111759275A (en) * | 2020-06-11 | 2020-10-13 | 煦普生物技术（珠海）有限公司 | Small animal imaging device |
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