CN109404748A - Using the lighting device of semiconductor laser matrix light source - Google Patents
Using the lighting device of semiconductor laser matrix light source Download PDFInfo
- Publication number
- CN109404748A CN109404748A CN201811055901.5A CN201811055901A CN109404748A CN 109404748 A CN109404748 A CN 109404748A CN 201811055901 A CN201811055901 A CN 201811055901A CN 109404748 A CN109404748 A CN 109404748A
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- China
- Prior art keywords
- laser
- lighting device
- semiconductor laser
- light source
- matrix light
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/69—Details of refractors forming part of the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/04—Refractors for light sources of lens shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The invention discloses a kind of lighting devices using semiconductor laser matrix light source comprising: semiconductor laser matrix light source is used for outgoing laser beam；Diverging meniscus lens group, for spreading the laser beam from the semiconductor laser；Phosphor sheet, for the laser after the diffusion to be changed into visible light；Free-form surface lens, for realizing the optical power detection of the visible light and the spot shaping of the visible light.Illuminator structure of the invention is simple, easy to assembly, consumes low, illumination spot uniform intensity distribution, can be used for the illumination in the large-scale place such as major urban arterial highway, airport, square, market.
Description
Technical field
The present invention relates to lighting area more particularly to a kind of lighting devices using semiconductor laser matrix light source.
Background technique
With the development of semiconductor technology, traditional lighting mode has greatly substituted trend.Semiconductor laser has function
The features such as rate is big, small in size, high-efficient, response is fast, low in energy consumption, compared to LED light source, laser lighting not only can increase projection away from
From, raising safety, while its volume is smaller, more compact structure, is lighting source better choice, but is issued by laser
Light angle of divergence very little, cannot be directly used to illuminate, existing laser illuminator system mostly uses greatly individual laser cell to carry out
Illumination, due to technical restriction, single laser can not accomplish high power, so the dress illuminated using independent laser
It sets and can be only applied to part occasion, be not able to satisfy the lighting requirement of a wide range of high brightness.
Using laser matrix as lighting source, the illumination for needing a wide range of highlight illumination occasion can be met well
It is required that realizing that laser lighting difficult point was laser beam homogenizes diffusion, concentrated on currently based on the research hotspot of laser lighting
On the white light source for how realizing small size high-color rendering, Optical System Design is studied and is lacked.
Summary of the invention
Aiming at the shortcomings in the prior art, the present invention at least provides the following technical solutions:
Using the lighting device of semiconductor laser matrix light source comprising:
Semiconductor laser matrix light source is used for outgoing laser beam；
Diverging meniscus lens group, for spreading the laser beam from the semiconductor laser；
Phosphor sheet, for the laser after the diffusion to be changed into visible light；
Free-form surface lens, it is whole for realizing the optical power detection of the visible light and the hot spot of the visible light
Shape.
Further, the semiconductor laser matrix light source includes several semiconductor lasers, it is described several half
Conductor laser forms multiple stripe-geometry laser combinations, passes through the fast axle and the slow-axis direction deflection laser along the laser
Device optical axis realizes the laser matrix light beam of light source diffusion.
Further, the laser matrix light after optical axis rotation of the laser in the semiconductor laser matrix
The angle of divergence of beam, which is greater than or equal to, illuminates the required angle of divergence, and optical axis included angle is definite value between adjacent two laser.
Further, the semiconductor laser is edge-emission semiconductor laser of the center wavelength in 450nm wave band, institute
Stating laser fast axle and the slow-axis direction angle of divergence is respectively 23 ° and 7 °.
Further, the angle of divergence of the laser beam after diverging meniscus lens is spread be equal to adjacent two-laser it
Between optical axis included angle.
Further, the diverging meniscus lens group includes several strip diverging meniscus lenses, each strip diverging meniscus lens
It is overlapped with corresponding stripe-geometry laser combination center, and each strip diverging meniscus lens and corresponding stripe-geometry laser group
It closes and rotates identical angle.
Further, the phosphor sheet is stretched by two isocentric circular arcs that radius is not much different, and circular arc center of circle institute
In the symmetrical overlapping of axles of straight line and laser array, generates it not to deflection of light and significantly affect.
Further, the free-form surface lens are set to the most external of the lighting device.
Further, the semiconductor laser matrix light source, diverging meniscus lens, phosphor sheet and free-form surface lens
In at least one be coated with anti-reflection film.
Further, the phosphor sheet is arc-shaped, and the phosphor sheet is coated with yellow fluorescent powder on one side.
Compared with prior art, advantageous effects of the invention are at least as follows:
Lighting device of the invention uses matrix laser as light source, saturating in conjunction with diverging meniscus lens group and free form surface
Mirror can satisfy the large-scale laser lighting requirement of high-power and high-luminance；And diverging meniscus lens group and free-form surface lens
Using can be good at homogenizing hot spot；The addition of the phosphor sheet of the arc-shaped can make the deviation of its light not generate obvious shadow
It rings；The apparatus structure is simple, easy to assembly, and low, illumination spot uniform intensity distribution is lost, and can be applied to illuminate neck on a large scale
Domain.
Detailed description of the invention
Fig. 1 is its lighting device overall structure diagram of the invention.
Fig. 2 is its lighting device 3D structural schematic diagram of the invention.
Fig. 3 is its lighting device schematic cross-sectional view of the invention.
Fig. 4 is semiconductor laser matrix light source schematic diagram of the invention.
Fig. 5 is diverging meniscus lens group schematic diagram of the invention.
Fig. 6 is free-form surface lens schematic diagram of the invention.
Appended drawing reference: 1 is semiconductor laser matrix light source, and 2 be diverging meniscus lens group, and 3 be to be coated with yellow fluorescent powder
Phosphor sheet, 4 is with the free-form surface lens for homogenizing function.
Specific embodiment
It is next below that the present invention will be further described in detail.
The present embodiment is designed referring to the related request in national Lighting Design of Urban Road standard CJJ45-2015, is selected
The high 10m of bar is taken, arrangement pitch is the case that the street lamp of 25m illuminates the road of wide 8m.
As shown in Figure 1, the lighting device of the invention using semiconductor laser matrix light source includes semiconductor laser
Matrix light source 1；Diverging meniscus lens group 2；Phosphor sheet 3；Free-form surface lens 4.
As shown in Figures 2 to 4, the phosphor sheet 3 of the present embodiment is coated with yellow fluorescent powder, semiconductor laser matrix light source
1 use 24 optical powers for the central wavelength of 1600mW 450nm wave band edge-emission semiconductor laser as light source, it is described
Semiconductor laser fast axle and the angle of divergence of slow-axis direction are respectively 23 ° and 7 °.According to the illumination zone in above-mentioned illumination case
It is required that the semiconductor laser is arranged as follows: along the slow-axis direction of the laser, by 6 laser
Device rearranges strip combination, and the optical axis included angle between adjacent two-laser is 7 °, is spaced 10mm, to form 4 groups of strip groups
It closes；Along the laser fast axis direction, 4 groups of strips combination is staggeredly put, put spacing be first group with second group it
Between be spaced 10mm, 20mm is spaced between second group and third group, is spaced 10mm between third group and the 4th group；And adjacent two strip
Optical axis included angle between combination is 28 °.The laser can satisfy above-mentioned illumination case after putting with upper type arrangement
In lighting regulations requirement, arrangement put after laser matrix can make its laser light source angle of divergence road extending direction extremely
Reach 102 ° less, road width directional divergence angle is at least up to 43 °, so that the slow-axis direction of its laser matrix be made to realize light intensity
Mil(unit of angular measure) is evenly distributed, and single laser beam need to be diffused to realize that the distribution of light intensity mil(unit of angular measure) is equal by its fast axis direction
It is even.
Diverging meniscus lens group 2 as shown in figs. 3 and 5 is placed above laser matrix, the lens are by 4 identical items
Shape diverging meniscus lens is arranged in fast axis direction, and every piece of lens surfaces externally and internally curvature respectively -2mm, -6mm, length are
200mm, arrangement mode is consistent with laser strip assembled arrangement mode, and guarantees straight line where every piece of inner surface of the lens center of circle
Straight line where each laser center of circle combined with corresponding strip is overlapped；Above lens group place radius be 50mm, long 200mm,
Arc-shaped phosphor sheet 3 of the center of circle at laser light source center the excitation wavelength of applied fluorescent powder and swashs on the phosphor sheet
Light device emission wavelength is consistent.
Above-mentioned phosphor sheet 3 is stretched by two isocentric circular arcs that radius is not much different, and the circular arc center of circle where straight line with
The symmetrical overlapping of axles of laser array, generate it not to deflection of light and significantly affect.
Free-form surface lens as shown in FIG. 6 are placed above phosphor sheet, free-form surface lens inner surface radius is
100mm, length and width are 200mm, and lens outer surface is the free form surface formed after being deflected by 20 planes according to certain angle, interior
Surface is gradually to become positive free form surface, China and foreign countries by negative from lens centre region to rims of the lens radius of curvature on fast axis direction
Surface action is to plan light distribution again to realize optical power detection on plane receiving plane, and inner surface effect is by hot spot
It is shaped as regular rectangular shape.
It should be understood that laser matrix light source has certain volume, above-mentioned Random Curved Surface Designing is close with point light source
It is carried out like premised on, according to correlation theory, free form surface volume is at least 4 times of light source volume, thus the actual result obtained
It is close with theoretical effect.
It is easy to assembly by above-mentioned apparatus structure it is found that illuminator structure of the invention is simple, consume low, illumination spot
Uniform intensity distribution can be used for the illumination in the large-scale place such as major urban arterial highway, airport, square, market.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. using the lighting device of semiconductor laser matrix light source, characterized in that it comprises:
Semiconductor laser matrix light source is used for outgoing laser beam；
Diverging meniscus lens group, for spreading the laser beam from the semiconductor laser；
Phosphor sheet, for the laser after the diffusion to be changed into visible light；
Free-form surface lens, for realizing the optical power detection of the visible light and the spot shaping of the visible light.
2. the lighting device according to claim 1, which is characterized in that the semiconductor laser matrix light source includes several
A semiconductor laser, several described semiconductor lasers form multiple stripe-geometry laser combinations, by along the laser
Fast axle and slow-axis direction deflect the laser optical axis and realize the laser matrix light beam of light source diffusion.
3. lighting device according to claim 1 or 2, which is characterized in that the laser in the semiconductor laser matrix
The angle of divergence of device laser matrix light beam after optical axis rotation, which is greater than or equal to, illuminates the required angle of divergence, and adjacent two institute
Stating optical axis included angle between laser is definite value.
4. lighting device according to claim 1 or 2, which is characterized in that the semiconductor laser is that center wavelength exists
The edge-emission semiconductor laser of 450nm wave band, the laser fast axle and the slow-axis direction angle of divergence are respectively 23 ° and 7 °.
5. the lighting device according to claim 1, which is characterized in that the laser beam is spread by diverging meniscus lens
The angle of divergence afterwards is equal to optical axis included angle between adjacent two-laser.
6. according to the lighting device of claim 2 or 5, which is characterized in that the diverging meniscus lens group includes several
Shape diverging meniscus lens, each strip diverging meniscus lens are overlapped with corresponding stripe-geometry laser combination center, and each strip
Diverging meniscus lens combines the identical angle of rotation with corresponding stripe-geometry laser.
7. the lighting device according to claim 1, which is characterized in that the phosphor sheet is not much different two same by radius
Heart circular arc stretches, and the symmetrical overlapping of axles of straight line and laser array where the circular arc center of circle, produces it not to deflection of light
Life significantly affects.
8. the lighting device according to claim 1, which is characterized in that the free-form surface lens are set to the illumination dress
The most external set.
9. the lighting device according to claim 1, which is characterized in that the semiconductor laser matrix light source, negative bent moon
At least one in lens, phosphor sheet and free-form surface lens is coated with anti-reflection film.
10. according to claim 1,4 or 7 lighting device, which is characterized in that the phosphor sheet is arc-shaped, described
Phosphor sheet is coated with yellow fluorescent powder on one side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811055901.5A CN109404748B (en) | 2018-09-11 | 2018-09-11 | Lighting device using semiconductor laser matrix light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811055901.5A CN109404748B (en) | 2018-09-11 | 2018-09-11 | Lighting device using semiconductor laser matrix light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109404748A true CN109404748A (en) | 2019-03-01 |
| CN109404748B CN109404748B (en) | 2020-08-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811055901.5A Active CN109404748B (en) | 2018-09-11 | 2018-09-11 | Lighting device using semiconductor laser matrix light source |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101545582A (en) * | 2009-05-05 | 2009-09-30 | 浙江大学 | Beam shaping illumination system of semiconductor laser array |
| CN102207263A (en) * | 2010-03-29 | 2011-10-05 | 东芝照明技术株式会社 | Lighting apparatus |
| CN102317681A (en) * | 2009-02-13 | 2012-01-11 | 夏普株式会社 | Lighting device and lighting apparatus using said lighting device |
| JP2013130835A (en) * | 2011-12-22 | 2013-07-04 | Sharp Corp | Homogenizer, homogenizer device and illuminating device |
| CN108398800A (en) * | 2018-02-11 | 2018-08-14 | 天津理工大学 | Turn optical illumination optical system device based on blue semiconductor laser beam shaping |
-
2018
- 2018-09-11 CN CN201811055901.5A patent/CN109404748B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102317681A (en) * | 2009-02-13 | 2012-01-11 | 夏普株式会社 | Lighting device and lighting apparatus using said lighting device |
| CN101545582A (en) * | 2009-05-05 | 2009-09-30 | 浙江大学 | Beam shaping illumination system of semiconductor laser array |
| CN102207263A (en) * | 2010-03-29 | 2011-10-05 | 东芝照明技术株式会社 | Lighting apparatus |
| JP2013130835A (en) * | 2011-12-22 | 2013-07-04 | Sharp Corp | Homogenizer, homogenizer device and illuminating device |
| CN108398800A (en) * | 2018-02-11 | 2018-08-14 | 天津理工大学 | Turn optical illumination optical system device based on blue semiconductor laser beam shaping |
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| Publication number | Publication date |
|---|---|
| CN109404748B (en) | 2020-08-07 |
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