CN1093980C

CN1093980C - Electron generating apparatus, image forming apparatus, method of manufacturing same and method of adjusting characteristics thereof

Info

Publication number: CN1093980C
Application number: CN97102639A
Authority: CN
Inventors: 山口英司; 鲈英俊
Original assignee: Canon Inc
Current assignee: Canon Inc
Priority date: 1996-02-23
Filing date: 1997-02-21
Publication date: 2002-11-06
Anticipated expiration: 2017-02-21
Also published as: CN1160923A; JPH10228867A; JP3387768B2

Abstract

It is an object of this invention to provide an electron generating apparatus which eliminates, with a simple process, variations in electron-emitting characteristics of electron sources caused by various factors, a method of adjusting the characteristics of the electron generating apparatus, a method of manufacturing the electron generating apparatus, and an image forming apparatus using the electron generating apparatus. Characteristic measuring voltages are applied from pulse generators to each surface-conduction emission device of a display panel, so that the electron-emitting characteristics are measured by a current detector. A pulse peak value setting circuit is controlled to output a voltage signal having a peak value determined in the above manner, and characteristic shift voltages are applied from the pulse generators to the surface-conduction emission device. With this process, the electron-emitting characteristics of the surface-conduction emission devices are equalized. The characteristic shift voltage is higher than the characteristic measuring voltage, and the characteristic measuring voltage is higher than a driving voltage.

Description

Imaging device, electron generating apparatus and generation device fabrication and character regulating method

The present invention relates on substrate, to be provided with electron generating apparatus that a collection of surface conductive ballistic device forms, regulate the method for this electron generating apparatus characteristic, the imaging device of making the method for this electron generating apparatus and having used this electron generating apparatus.

As electron emission device, two known traditionally classes are thermionic cathode device and cold cathode device.Cold cathode device for example has surface conductive ballistic device, field emission type ballistic device (being called FE type device later on) and metal/insulator/metal mold ballistic device (being called the mim type device later on).

The known example of FE type device is described in " FieldEmission " of W.P.Dyke and W.W.Dolan, " Advance in Electron Physics ", 8,89 (1956) and " the Physical Properties of thin-film field emission cathodes withmolybdenum cones " of C.A.Spindt, " J.Appl.Phys. ", in 47,5248 (1976).

The known example of mim type device be described in C.A.Mead's " Operation ofTunnel-emission Devices ", " J.Appl.Phys. " is in 32,646 (1961).

The example of surface conductive ballistic device for example has M.I.Elinson to be described in " Radio, Eng.Electron Phys. ", in 10 (1965), some other example will be in the following describes.

The surface conductive ballistic device has utilized following phenomenon: make electric current abreast by the surface of the film that forms on substrate, can cause the electronics emission on the film of small size.This surface conductive ballistic device comprises the device (G.Dittmer: " Thin Solid Films ", 9,317 (1972)) of using the Au film, uses In ₂O ₃/ SnO ₂The device of film (M.Hartwell and C.G.Fonstad, " IEEE Trans.ED Conf. ", 519 (1975)), use the device (HisashiAraki of carbon film, et al: " Vacuum ", Vol.26, No.1.p.22 (1983)), or the like, and according to the application SnO of above-mentioned Elinson ₂The device of film.

Figure 27 is the plane graph of people's such as M.Hartwell surface conductive ballistic device, and this example has reflected the typical structure of this class surface conductive ballistic device.Referring to Figure 27, label 3001 refers to substrates and 3004 refers to the metal-oxide film that formed by sputter.This conductive film 3004 is H shape configuration, as shown in figure 27.Conductive film 3004 is carried out electrifying process (being called the excitation forming process later on) relatively, has formed electron emission part 3005.Referring to Figure 27, have one to be set at the width W that 0.5 to 1mm gap L and is set to 0.1mm.For ease of diagram, electron emission part 3005 is rectangular and be positioned at the central authorities of conductive film 3004, but this is not tram and the profile that has accurately shown this electron emission part.

In people's such as M.Hartwell above-mentioned surface conductive ballistic device, electron emission part 3005 is normally by 3004 executions are referred to as to encourage the electrifying process of forming process to form to conductive film before the electronics emission.In this excitation forming process, be with the utmost point slow rate speed of 1V/min for example when electrifying, constant dc voltage is applied to two of conductive film 3004 brings in the character that partly makes conductive film 3004 destroy or be out of shape or change conductive film 3004, form high-resistance electron emission part 3005 thus.Note, have the crack on conductive film 3004 ruinate or part of being out of shape or the altered part of character.When after the excitation forming process, suitable voltage being added on the conductive film 3004, near this crack, promptly produce the electronics emission.

So the advantage of above-mentioned surface conductive ballistic device is at cold cathode device, they simple in structure is easy to make.Therefore, can in wide spectrum, constitute many devices.In Japan Patent (disclosing) that the applicant applied for 64-31332 number, the method that is used for disposing and driving a collection of this class device is disclosed for example.

Studied about the surface conductive ballistic device for example such as the application of aspects such as the image device of image display unit, image recording apparatus, charged electron gun.

About the application in imaging device, as No. 5066883, United States Patent (USP) that the applicant applied for and Japan Patent (disclosing) 2-257551 and 4-28137 number disclosed, studied the form that fluorophor luminous under surface conductive ballistic device and the electron beam irradiation combines.This class image display expection has the more superior all character of more traditional image display.For example, compare with current general liquid crystal display, the advantage of above-mentioned display device is that it is a light emission type and do not need bias light and it that broad visual angle is arranged.

The inventor etc. have also studied the cold cathode device of various materials, various manufacture method and various structures except that above-mentioned traditional device.The image display that the inventor etc. have also studied the multiple electron beam source that disposes a collection of cold cathode device and used this multiple electron beam source.

The inventor etc. have also studied the multiple electron beam source according to wiring method shown in Figure 28.Specifically, this multiple electron beam source by a large amount of cold cathode device of two-dimensional arrangements with these devices are made up of the matrix structure that lead connects into, as shown in figure 28.

Referring to Figure 28, label 4001 refers to cold cathode device, and 4002 refer to the row wiring layer, and 4003 refer to the column wiring layer.Row wiring layer 4002 is represented by the conductor resistance among Figure 28 4004 and 4005 with the limited resistance that in fact column wiring layer 4003 has.Wiring shown in Figure 28 is referred to as simple matrix wiring.For ease of diagram, multiple electron beam source shown in Figure 28 is to be made of 6 * 6 matrixes.Obviously, the capable X columns of matrix is not limited to described arrangement form.In the multiple electron beam source of image display, arranged and be connected with and abundant can carry out the above-mentioned device that required image shows with lead.

Being connected in the multiple electron beam source of simple matrix by lead at the surface conductive ballistic device, is that the suitable signal of telecommunication is offered row wiring layer 4002 and column wiring layer 4003 to export required electron beam.During surface conductive ballistic device in driving the arbitrary row of this matrix, just have and select voltage Vs to be added on the row wiring layer 4002 in selected this delegation.There is non-selection voltage Vns to be applied on the row wiring layer 4002 of non-selected row simultaneously.With the aforesaid operations synchronised, the driving voltage Ve that is used to export electron beam just is applied to column wiring layer 4003.Under the method, there is voltage (Ve-Vs) to be added on the surface conductive ballistic device of row of selection, have voltage (Ve-Vns) to be added on the surface conductive ballistic device of unselected row simultaneously, but supposition this moment can be ignored because of the voltage drop that

conductor resistance

4004 and 4005 causes.When voltage Ve, Vs and Vns are adjusted to suitable level, the electron beam of desirable strength is only arranged from the surface conductive ballistic device output device of selected row just.When being applied on each column wiring layer 4003, just from each device of selected row, export the electron beam of varying strength with different driving voltage Ve.Because the response height of surface conductive ballistic device, the output time of electron beam also can change according to the time that is used to apply driving voltage Ve.

This have the surface conductive ballistic device line up simple matrix multiple electron beam source all application can be arranged.For example, it just can suitably be used as the electron source of image display unit by suitably supplying with the signal of telecommunication of image information.

In order to improve the result of the broad research that surface conductive ballistic device characteristic done, the activation in the discovery manufacture processes such as the inventor is effective.

As previously mentioned, when the electron emission part of surface conductive ballistic device is to be formed, has taked that electric current is flow on the conductive film and destroy partly, be out of shape or damaged this film and form the process (excitation forming process) in crack.Then, when carrying out activation, just can significantly improve electron emission characteristic.

Exactly, this activation is that the electron emission part that under proper condition the excitation forming process formed is implemented and electrified, with carbon or carbon compound be deposited to electron emission part around.For example, periodically apply potential pulse in vacuum atmosphere, have in this atmosphere and suitably dividing the organic substance of depressing, total pressure is 10 ^-4～10 ^-5Torr.In this process, various micro crystal graphites, polycrystalline graphite, amorphous carbon and their mixture deposit to about 500 dusts or less thickness near electron emission part.These conditions are a little examples, must suitably change according to the material and the profile of surface conductive ballistic device.

With comparing before the electron emission part that adopted said process and the activation, improve 100 times or higher usually approximately at the emission current that applies under the same voltage.After finishing this activation, preferably reduce the dividing potential drop of organic substance in the vacuum atmosphere.

So, when manufacturing wherein has a collection of surface conductive ballistic device, this device also to connect into the multiple electron beam source of simple matrix by lead, preferably each device is all implemented activation.

In the multiple electron beam source that makes in a manner described, the emission characteristics of electron source can change because of the many variations in the said process.If this device is used for forming display device, the variation of emission characteristics just shows as brightness and changes.Exist the multiple factor that can change the electron emission characteristic of each electron source in the multiple electron beam source: the inhomogenous atmosphere gas of the inhomogenous conditioned disjunction that electrifies in the scale error of the variation of electron emission part material therefor component, the parts of device, the excitation forming process in inconsistent electrify condition and the activation.But,, just need state-of-the-art manufacturing equipment and the strictest process management, and this will make manufacturing cost increase to unpractiaca level in order to eliminate all these class factors.

The present invention has considered the problem of above-mentioned common property, and its purpose is to provide: can eliminate electron generating apparatus that electron emission characteristic in the multiple electron beam source that is caused by above-mentioned all factors changes, regulate the method for this kind electron generating apparatus characteristic, the imaging device of making the method for this kind electronic equipment and using this kind electron generating apparatus.

Another object of the present invention is to provides: by the ins and outs of utilizing the surface conductive ballistic device make multiple electron beam source characteristic equalization electron generating apparatus, regulate the method for this kind electron generating apparatus characteristic, the imaging device of making the method for this electron generating apparatus and having used this kind electron generating apparatus.

In order to reach above-mentioned all purposes, the invention provides the method that a kind of like this adjusting has the electron generating apparatus characteristic of multiple electron beam source, described multiple electron beam source comprises a collection of surface conductive ballistic device and the drive unit that is used for to each surface conductive ballistic device outputting drive voltage, and described method comprises the steps: to apply the electron emission characteristic that feature measurement voltage is measured this batch surface conductive ballistic device; Try to achieve the desirable value of electron emission characteristic this batch surface conductive ballistic device electron emission characteristic to be shifted according to the electron emission characteristic that records; And apply the characteristic shift voltage for electron emission characteristic this batch surface conductive ballistic device to be shifted, so that the electron emission characteristic of this batch surface conductive ballistic device becomes desirable value, characteristic shift voltage wherein is higher than feature measurement voltage, and feature measurement voltage is higher than above-mentioned driving voltage.

The dividing potential drop that is preferably in organic gas is no more than 10 ^-8Apply described characteristic shift voltage in the atmosphere of torr.

Said method also includes such several steps: the characteristic of measuring described this batch surface conductive ballistic device after applying the characteristic shift voltage once more; And according to this result who measures once more, the surface conductive ballistic device to be shifted to described electron emission characteristic applies the characteristic shift voltage again.

In above-mentioned measuring process, can be at each emission current of launching from described surface conductive ballistic device of when described surface conductive ballistic device applies feature measurement voltage, measuring.

In above-mentioned measuring process, can be in each device current that in described surface conductive ballistic device, flows of when described surface conductive ballistic device applies feature measurement voltage, measuring.

In above-mentioned measuring process, can when described surface conductive ballistic device applies feature measurement voltage, measure by light emission brightness each, and the luminance transformation measured is the numerical value corresponding to one of the emission current of described surface conductive ballistic device and device current from the fluorophor of the electron radiation of described surface conductive ballistic device.

The present invention also comprises the method for making electron generating apparatus.

According to the present invention, a kind of method of making electron generating apparatus is provided, this equipment has multiple electron beam source, described multiple electron beam source comprises a collection of surface conductive ballistic device and is used for driving voltage is exported to the drive unit of each surface conductive ballistic device that described method comprises the steps: to be formed for the electrode and the conducting film of this batch surface conductive ballistic device on substrate; Electrify by the described conducting film of above-mentioned electrode pair and to be formed for the electron emission part of this batch surface conductive ballistic device; Activate these electron emission part; Apply feature measurement voltage and measure the electron emission characteristic of this batch surface conductive ballistic device; Try to achieve the desirable value of electron emission characteristic this batch surface conductive ballistic device electron emission characteristic to be shifted according to the electron emission characteristic of measuring; And apply the characteristic shift voltage for electron emission characteristic this batch surface conductive ballistic device to be shifted, make the electron emission characteristic of this batch surface conductive ballistic device become desirable value, wherein multiple electron beam source comprises a collection of surface conductive ballistic device, described drive unit is to each surface conductive ballistic device outputting drive voltage, and above-mentioned characteristic shift voltage is higher than described feature measurement voltage, and this feature measurement voltage is higher than aforementioned driving voltage.

The present invention also comprises electron generating apparatus and image display itself.Electron generating apparatus provided by the invention comprises: multiple electron beam source, and it has a collection of surface conductive ballistic device to be disposed on the substrate; And drive unit, it drives this multiple electron beam source according to picture signal, and wherein, this electron generating apparatus is made by said method.

Image display provided by the invention comprises above-mentioned electron generating apparatus and fluorophor, and this fluorophor is luminous when the electron beam irradiation of multiple electron beam source.

In the present invention, before or after the electron emission characteristic of measuring each surface conductive ballistic device, be simultaneously apply be used for changing this Devices Characteristics shift voltage before, from then on remove described organic gas around the device.

Pulse is changed by display driver for anti-Devices Characteristics here, and the magnitude of voltage that is applied on each surface conductive ballistic device preferably satisfies following relation: (peak value of display driver pulse)＜(magnitude of voltage that applies in the measurement)＜(peak value of stored waveform signal).The display driver pulse is also referred to as driving voltage.The magnitude of voltage that is applied in the measurement is also referred to as feature measurement voltage.The stored waveform signal is also referred to as the characteristic shift voltage.

Electron generating apparatus of the present invention can be used for EB (electron beam) photoetching of semiconductor fabrication process.

In addition, after finishing this electron generating apparatus, when the electron emission characteristic of surface conductive ballistic device has had change as time goes by, also can utilize the method for above-mentioned adjusting electron generating apparatus characteristic of the present invention.

According to the present invention, can eliminate the change of the electron emission characteristic of the electron emission device that all factors cause with simple technical process.

According to the present invention, can utilize the ins and outs of surface conductive ballistic device to make the characteristic of electron emission device balanced basically.

Other characteristics of the present invention and advantage can obtain to understand from the explanation of carrying out below in conjunction with accompanying drawing, represent identical or similar parts with identical label in institute of the present invention drawings attached.

Figure 1A and 1B show the example of the stored waveform signal of understanding surface conductive ballistic device of the present invention;

Curve chart among Fig. 2 A and the 2B is used for explaining with respect to the difference between the emission current characteristic of the driving voltage of surface conductive ballistic device;

Block diagram among Fig. 3 shows, is used for the stored waveform signal is added to the layout of the equipment of multiple electron beam source according to first embodiment of the invention;

Curve chart among Fig. 4 shows, the emission current characteristic of observed ballistic device when changing driving voltage, and this ballistic device has the different electron emission characteristic that produces in the process of making multiple electron beam source;

Curve chart among Fig. 5 shows, observed electron emission current characteristic when changing the peak value of stored waveform signal;

Fig. 6 is a curve chart, is used for explanation after applying the stored waveform signal, the emission current characteristic of this ballistic device that is driven by predetermined driving voltage Vf1;

Fig. 7 is a flow chart, shows the measuring process of the electron emission characteristic of each surface conductive ballistic device in the electron source of bright first embodiment;

Fig. 8 is a flow chart, shows that electron emission characteristic that bright basis records applies the process of stored waveform signal;

Fig. 9 is a block diagram, shows the bright layout that is used for the stored waveform signal is applied to the equipment of multiple electron beam source according to second embodiment of the invention;

Figure 10 is a curve chart, shows the emission current characteristic of observed ballistic device when changing driving voltage, and this ballistic device has the different electron emission characteristic that produces in the process of making multiple electron beam source.

Figure 11 is a curve chart, shows observed device current characteristic when changing the peak value of stored waveform signal;

Figure 12 is a curve chart, is used for explanation after applying the stored waveform signal, by the device current characteristic of the predetermined this ballistic device that driving voltage drove;

Figure 13 is a block diagram, shows brightly according to third embodiment of the invention, is used for the stored waveform signal is applied to the layout of the equipment of multiple electron beam source;

Figure 14 is a flow chart, shows the step of making multiple electron beam source of the present invention;

Figure 15 is the perspective view of part excision, shows the display panel of image display of the present invention;

Figure 16 A and 16B are plane graphs, show the arrangement form of fluorophor on display panel panel of the present invention;

Figure 17 A and 17B are the plane graph and the profiles of the used planar surface conduction of the present invention ballistic device;

Figure 18 A to 18E is the profile that shows above-mentioned planar surface conduction ballistic device manufacturing step;

Figure 19 is a curve chart, shows the waveform of the voltage that applies in the excitation forming process;

Figure 20 A and 20B are curve charts.The waveform that shows variation voltage and emission current Ie that applies in the activation respectively;

Figure 21 is the profile of used notch cuttype surface conductive ballistic device among the present invention;

Figure 22 A to 22F is a profile, shows the profile of above-mentioned notch cuttype surface conductive ballistic device manufacturing step;

Figure 23 is a curve chart, shows the typical characteristics of used surface conductive ballistic device among the present invention;

Figure 24 is the plane graph of the substrate of used multiple electron beam source among the present invention;

Figure 25 is the part sectioned view of the substrate of used multiple electron beam source among the present invention;

Figure 26 is a block diagram, shows the layout of multifunctional image display device of the present invention;

Figure 27 is a plane graph, shows the structure of common surface conductive ballistic device; And

Figure 28 then is the schematic diagram that is used for illustrating the matrix form wiring of common multiple electron beam source.

Describe most preferred embodiment of the present invention below in detail.

Detailed description most preferred embodiment of the present invention at first.

The measure that is used for addressing the above problem at first is described in detail in detail.Among the present invention, use the function (being called the electron emission characteristic memory function later on) make the surface conductive ballistic device have electron emission characteristic to be stored, predetermined electron emission characteristic is stored in the unit of surface conductive ballistic device.Adopt this arrangement, make the electron emission characteristic of each surface conductive ballistic device become balanced.

The following describes the shown electron emission characteristic memory function of surface conductive ballistic device of the present invention.

The inventor etc. have driven a kind of surface conductive ballistic device that has experienced excitation forming process and activation in the atmosphere that the organic gas dividing potential drop has reduced, and have measured the electrical property of this device simultaneously.

Figure 1A and 1B are curve charts, have shown the voltage waveform that is applied to the drive signal on the surface conductive ballistic device of the present invention.Transverse axis express time axis, the longitudinal axis represent to put on the voltage (being referred to as device voltage Vf later on) on this surface conductive ballistic device.

Shown in Figure 1A, use continuous square voltage pulse as drive signal, the application time of potential pulse is divided into first to the 3rd cycle.Each cycle inside applies the pulse with 100 unanimities.Figure 1B is the waveform of such potential pulse shown in Figure 1A.

The condition of measuring is: the pulse width T 1=66.8 μ s in each cycle, pulse period T2=16.7ms.These conditions are when the surface conductive ballistic device is applied to general TV receiver, determine with respect to standard drive condition group.But above-mentioned memory function can be measured under other condition.Should know when carrying out described measurement, the impedance of wiring route from source driving signal to each surface conductive ballistic device be reduced to be enough to make the rise time of the potential pulse that is applied to effectively on surface conductive ballistic device Tr and fall time Tf smaller or equal to 100ns.

Device voltage Vf first with the period 3 be Vf=Vf1, be Vf=Vf2 in second round.These two device voltage Vf1 and Vf2 are set at the electronics emission threshold voltage that is higher than each surface conductive ballistic device and satisfy Vf1＜Vf2 simultaneously.Because electronics emission threshold voltage changes with the shape and the material of surface conductive ballistic device, thereby this kind voltage will be made suitable setting according to surface conductive ballistic device to be measured.As for the atmosphere around the surface conductive ballistic device in measuring, total pressure is 1 * 10 ^-6Torr, the dividing potential drop of organic gas are 1 * 10 ^-9Torr.

Fig. 2 A and 2B are curve chart, show in the electrical characteristic that applies the conduction of drive signal lower surface shown in Figure 1A and 1B ballistic device.Referring to Fig. 2 A, transverse axis is represented device voltage Vf, the measured value of the electric current (being called emission current Ie later on) of longitudinal axis presentation surface conduction ballistic device emission.2B with the aid of pictures again, transverse axis is represented device voltage Vf, the longitudinal axis is illustrated in the measured value of the electric current (being called device current If later on) that flows in the surface conductive ballistic device.

At first emission current Ie shown in the key diagram 2A is with respect to the characteristic curve of device voltage Vf.In the period 1 shown in Figure 1A, the surface conductive ballistic device is in response to a driving pulse, according to characteristic curve Iec (1) output emission current.In the rise time of driving pulse Tr, when the voltage Vf that applies surpasses Vth1, emission current Ie then press characteristic curve Iec (1) surge.During Vf=Vf1, promptly in the interval of pulse width T 1, emission current remains in Ie1.In the fall time of driving pulse Tf, emission current Ie swashs according to characteristic Iec (1) and subtracts.

In second round, when beginning to apply by the given pulse of Vf=Vf2, characteristic curve Iec (1) promptly changes into characteristic curve Iec (2).Specifically, in the rise time of driving pulse Tr, when the voltage Vf that applies surpasses Vth2, emission current Ie promptly increases severely according to characteristic curve Iec (2).Vf=Vf2 in the cycle promptly in interval T1, emission current Ie remains in Ie2.In the fall time of driving pulse Tf, emission current Ie swashs according to characteristic curve Iec (2) and subtracts.

In the period 3, though apply the given pulse by Vf=Vf1 once more, emission current Ie changes according to characteristic curve Iec (2).Specifically, in the rise time of driving pulse Tr, when the voltage Vf that applies surpasses Vth2, emission current just increases severely according to characteristic curve Iec (2), is that emission current remains in Ie3 in the interval T1 in the cycle of Vf=Vf1.In the fall time of driving pulse Tf, emission current Ie then reduces sharply according to characteristic curve Iec (2).

As mentioned above, in the period 3, owing to stored characteristic curve Iec (2) in second round, emission current Ie promptly reduces to Ie3 from Ie1, and little than in the period 1 becomes.

Equally, the characteristic curve of device current If with respect to device voltage Vf is discussed again, shown in Fig. 2 B, this device was worked according to characteristic curve Ifc (1) in the period 1.But in second round, device is then pressed characteristic curve Ifc (2) work.And in the period 3, this device is just according to characteristic curve Ifc (2) work of stored second round.

For ease of explanation, only set for first to the 3rd totally three cycles.But obviously can be not limited to above prescribed situation.When pulse voltage being imposed on the surface conductive device with memory function, when the magnitude of voltage that pulse had that applies during greater than the magnitude of voltage of the pulse that had before applied, characteristic curve promptly is shifted, and stores resulting characteristic curve.After this, unless when applying the pulse with big magnitude of voltage, above-mentioned characteristic curve (electron emission characteristic) continues to be stored.Such memory function comprises in the FE type electron emission device at other electron emission device fails to observe.So this kind feature is that the surface conductive ballistic device is peculiar.

The following describes to realizing the necessary environment of above-mentioned electron emission characteristic memory function.Want to realize above-mentioned memory function satisfactorily, must reduce around the surface conductive ballistic device dividing potential drop of organic gas in the vacuum atmosphere, even so just can have voltage to be applied on the surface conductive ballistic device, also can prevent the further deposit of blocking or carbon compound, and must keep this state.Preferably make the organic gas dividing potential drop in the atmosphere be decreased to 10 ^-8Torr or lower.As if possible, preferably this dividing potential drop is remained on 10 ^-10Torr or lower.Should know the dividing potential drop of this organic gas, be by to mainly being made up of carbon and hydrogen and being that the dividing potential drop of 13 to 200 organic molecule is carried out integration and tried to achieve by the mass number that mass spectrography records with quantitative manner.

It is as follows to reduce around the surface conductive ballistic device typical method of organic gas dividing potential drop.Inside is provided with substrate and is formed with the vacuum tank heating of described surface conductive ballistic device on the substrate.Each device surface is removed organic gas and is divided the period of the day from 11 p.m. to 1 a.m in container from then on, with for example the vacuum pump or the oilless ionic pump of sorption pump one class carry out vacuum-evacuate.After having reduced the dividing potential drop of organic gas under this mode, continue to find time to keep this state with the vacuum pump that does not have oil.But, depending on application purpose, all there is shortcoming in this method of utilizing vacuum pump to find time continuously aspect capacity, energy consumption, weight and the cost.When need are used for image display with this surface conductive ballistic device, need the organic gas molecule is removed fully to reduce the dividing potential drop of organic gas, in vacuum tank, form breathing film afterwards, meanwhile seal up blast pipe and maintain this state.

In most cases, stay the steam that organic gas in the vacuum atmosphere derives from used oil in rotary pump or oil diffusion pump and so on the vacuum pumping hardware, or the residue of used organic solvent in the surface conductive ballistic device manufacture process.The example of this organic gas is the organic acid of aliphatic hydrocarbon, aromatic hydrocarbons, alcohols, aldehydes, ketone, amine, phenols, carboxylic acid or sulfonic acid of for example alkane, alkene or alkynes and so on and so on or the derivative of above-mentioned organic substance; Specifically, then be butadiene, n-hexane, 1-hexene, benzene, toluene, ortho-xylene, phenylcyanide, vinyl chloride, trichloroethylene, methyl alcohol, ethanol, isopropyl alcohol, formaldehyde, acetaldehyde, acetone, butanone, diethyl ketone, methylamine, ethamine, acetic acid and propionic acid.

Referring to accompanying drawing in detail most preferred embodiment of the present invention is described in detail below.

First embodiment

In first embodiment, before being actually used in display image, all it has been measured each surface conductive ballistic device its electron emission characteristic.If the electron emission characteristic of each device is variant, just must proofreaies and correct and make it consistent.The method of proofreading and correct comprises several steps, and need apply the voltage of following setting in each step.Specifically, in measuring process, add driving voltage VE _Measure, be used for measuring the emission current characteristic of each device; In regulating step, add characteristic shift voltage V _Displacement, be used for each Devices Characteristics is adjusted to homogeneous; Add again and be used for the maximum voltage V of driving element with display image _DriveThe relation of above-mentioned each voltage is as follows:

V _Drive＜VE _Measure＜V _Displacement

As mentioned above, because VE _MeasureBe higher than V _Drive, can on each device, apply the higher voltage of using than display image of driving voltage in advance.So each Devices Characteristics is not changed because of applying high pressure.In addition, owing to established V _Displacement＞VE _Measure, V _DisplacementIt is the maximum voltage that is added on each surface conductive ballistic device.Therefore by applying V _DisplacementJust the electron emission characteristic of each device can be proofreaied and correct to desirable value.Also owing to established V _Displacement＞V _Drive, adjusted to unanimity in each Devices Characteristics, each Devices Characteristics just can not change in actual use.

Fig. 3 is a block diagram, shows the configuration of bright drive circuit, and this drive circuit is added to stored waveform signal on each surface conductive ballistic device of display panel 1, to change the electron emission characteristic of each surface conductive ballistic device on the electron source substrate.

Referring to Fig. 3, in display panel 1, in vacuum tank, be provided with: have a collection of surface conductive ballistic device be arranged in matrix form substrate, be located at this substrate top and the panel of fluorophor luminous under the electron radiation of above-mentioned device arranged, or the like.Be provided with the fluorophor that joint 2 imposes on high pressure from high-voltage power supply 11 display panel 1.Switch matrix 3 and 4 is selected row wiring layer and column wiring layer respectively, with the selected electron emission device that pulse voltage is applied thereto.Pulse generator 6 and 7 is respectively aforementioned memory function and provides pulse waveform signal Px and Py.Peak value of pulse initialization circuit 8 output pulse setting signals are to measure the peak value that pulse generator 6 and 7 pulse signal are exported.Control circuit 9 is surveyed poor between the emission current value Ie that these set points and current probe 12 detect, and output simultaneously is used to set the data Tv of peak value to peak value of pulse initialization circuit 8.CPU 9a is controlling the operation of control circuit 9.Control program (flow process among Fig. 7 and 8) and the various data of memory 9b storage CPU 9a.Switch matrix control circuit 10 output switch change-over signal Tx and Ty select with the switch of control switch matrix 3 and 4, select thus to apply the electron emission device of memory function with pulse voltage to it.

The following describes the work of this drive circuit.The work of this drive circuit comprises the one-level of the electron emission current of measuring display panel 1 each surface conductive ballistic device, and the one-level that applies the pulse waveform signal that memory function uses corresponding to the emission current Ie that detects.

At first the method for emission current Ie is measured in explanation.According to the switch matrix control signal Tsw from control circuit 9, switch matrix control circuit 10 selectively connects, and makes switch matrix 3 and 4 can select the row be scheduled to and the wiring layer of row respectively, to drive required surface conductive ballistic device.

The peak-data Tv that control circuit 9 output electron emission characteristics are measured gives peak value of pulse initialization circuit 8.Give pulse generator 6 and 7 respectively from peak value of pulse initialization circuit 8 output peak-data Lpx and Lpy.According to this peak-data Lpx and Lpy, pulse generator 6 and 7 is exported driving pulse Px and Py respectively, and they are added on the selected device by switch matrix 3 and 4.Driving pulse Px has opposite polarity with Py, and has the amplitude that is added to voltage (peak value) the Vf1 amplitude 1/2 that is used to measure on the surface conductive ballistic device.Meanwhile, predetermined voltage is applied on the fluorophor of display panel 1 from high-voltage power supply 11.Measuring at the surface conductive ballistic device with current probe 12 is driving pulse Px and Py mobile emission current Ie when driving.

Fig. 7 is a flow chart, shows the feature measurement process of being undertaken by control circuit 9.

At step S1, matrix switch output control signal Tsw, and, select the surface conductive ballistic device of display panel 1 thus by the described switch matrix 3 of switch matrix control circuit 10 switches and 4.At step S2, the peak-data Tv that will be applied to the pulse signal on the selected device exports to peak value of pulse initialization circuit 8.This peak value that is used to measure is higher than and is used for the driving voltage Vf of display image.At step S3, the pulse signal that pulse generator 6 and 7 provides is used for measuring the electron emission device characteristic is applied to by switch matrix 3 and 4 in step S1 on the selected surface conductive ballistic device.At this moment, electron emission current Ie imports in step S4, and is stored among the memory 9b in step S5.

At step S6, whether check all measures surface conductive ballistic devices all on the display panel 1.If be "No" among the step S6, then flow process enters step S7.This moment, matrix switch output control signal Tsw selected next surface conductive ballistic device, and flow process turns back to step S3 simultaneously.

If be "Yes" in step S6, then flow process enters step S8 the generation electric current I e of all surface of display panel 1 conduction ballistic device is compared.Will reference example will determine the storage applied voltage value to each device to be applied to describe as the back as Fig. 4 and 5.The magnitude of voltage of determining is stored among the memory 9b.

Below with reference to the emission current example of Fig. 4 explanation according to the aforesaid way measurement.

Fig. 4 is a curve chart, shown observed when changing driving voltage (peak value of driving pulse), have an emission current characteristic of the surface conductive ballistic device of the different emission characteristicss that in the manufacture process of the multiple electron beam source of present embodiment display panel 1, produce.

Referring to Fig. 4, the electron emission characteristic of certain surface conductive ballistic device is represented with performance curve (a), and this specific character of another device is represented with performance curve (b).So for the electron emission device with characteristic (a), the emission current under driving voltage Vf1 is Ie1, and for the electron emission device with characteristic (b), this electric current is Ie2 (Ie1＞Ie2).

As mentioned above, the emission current characteristic that had of surface conductive ballistic device of the present invention is corresponding to the peak-peak of previous alive driving pulse.

In Fig. 5, when the maximum Vfm of the waveform signal that is used for memory function changed, device itself was driven by a signal less than the predetermined value of Vfm value.So, be applied on each surface conductive ballistic device by the suitable pulse (being called the stored waveform signal later on) that will have different peak-peaks, can make the electron emission characteristic homogeneous.

In Fig. 4, for the characteristic that makes the ballistic device that demonstrates emssion characteristic curve (a) consistent with the characteristic of the ballistic device that demonstrates emssion characteristic curve (b), can the stored waveform signal be applied on the ballistic device that demonstrates characteristic curve (a) with reference to characteristic shown in Figure 5, make the emission current Ie under the driving voltage Vf1 change to Ie2 thus from Ie1.

In other words, electron emission characteristic for balanced this batch electron emission device, the electrical characteristics curve (Vf-Ie) of one device is moved right in curve chart (Fig. 2 A), the Devices Characteristics that purpose is to make characteristic curve be positioned the rightmost side is as target (benchmark), thereby this device and target are complementary.In this case, the level of tying the storage voltage waveform (being shift voltage) that puts on each electron emission device is decided by the difference with target.With the difference of target big more (for example, it is big that Ie1 among Fig. 4 and the difference of Ie2 become), that is, the Devices Characteristics curve keeps left more in the curve chart, needs mobile amount just big more.

Simultaneously, carried out repeatedly above-mentioned for how determining according to the level that puts on the shift voltage of the electron emission device characteristic curve that moves right with reference to the described experiment of Figure 1A-2B with initial characteristic.Here, experimentize, each device is applied different voltage Vf2 by the electron emission device of selecting respectively to have different initial characteristics, and storage gained data.Notice that in device shown in Figure 3, these data are stored in the control circuit 9 in advance as look-up table (look-uptable).

Fig. 5 shows from the look-up table of the electron emission device that is used for having initial characteristic identical shown in Fig. 4 label a and selects the resulting curve of data.Among the figure, transverse axis is represented shift voltage, and the longitudinal axis is represented emission current Ie.By device is applied shift voltage and and then apply the driving voltage identical and can obtain this curve with Vf1, measured emission current.Therefore, be the level of the shift voltage of determining to put on device, the Vfm value when in Fig. 5, having read in Ie=Ie2 with Fig. 4 characteristic a.

Again with reference to Fig. 7, below to its supplementary notes.Among the step S8 of Fig. 7, the shift voltage (being storage voltage) in the control circuit 9 decision following steps among Fig. 3.

At first select target electron emission device (benchmark).More particularly, the measurement result of each electron emission device Ie is compared to each other, and selects the device that characteristic curve (Vf-Ie) is kept right in curve chart (Fig. 2 A) most from all electron emission devices.Later on selected electron emission device is called the benchmark device.Note, when device that a plurality of characteristic curves are kept right most, with these a plurality of devices as the benchmark device.

Then, determine the storage voltage of the device except that the benchmark device.Control circuit 9 reads in the data that are similar to the initial characteristic that is determined device most from the look-up table of storage in advance.

From the data of being read in, select to be used for the storage voltage (according to the explanation of Fig. 5) that equilibrium is determined device and benchmark Devices Characteristics with reference to the front.

Determine the storage voltage of each device in the above described manner, in step S9, the result is stored among the memory 9b.

Because the characteristic curve of benchmark device need not be shifted, the differentiation information of the storage voltage that is applied about the benchmark device also just needn't be stored among the memory 9b.Another kind of mode is the magnitude of voltage that is lower than the measuring voltage that is applied among the step S3 can be stored among the memory 9b.

The following describes the method that the application memory waveform signal makes the electron emission characteristic equilibrium.At this moment, demonstrate the electron emission characteristic of characteristic changing for representing of the ballistic device of emssion characteristic curve among Fig. 4 (a) by characteristic curve (b).To describe an example referring to the flow chart among Fig. 8 below, wherein the emission current value under predetermined drive voltages Vf1 changes to Ie2.

Flow chart among Fig. 8 is understood the process of the electron emission characteristic homogenization of all surface conduction ballistic device make display panel 1, and this process is that the control circuit by present embodiment carries out.

At step S11, switch matrix 3 and 4 is controlled by switch matrix control signal Tsw by switch matrix control circuit 10, is selected the surface conductive ballistic device that is applied in the stored waveform signal of display panel 1.In step 12, read the storage voltage data of selected surface conductive ballistic device from memory 9b.In step 13, determine whether the stored waveform signal to be imposed on the surface conductive ballistic device.When this characteristic treat with Fig. 4 in the represented characteristic homogenization of characteristic curve (b) time, the surface conductive ballistic device for having for the represented characteristic of characteristic curve (b) just needn't apply the stored waveform signal.Determining in execution in step 13 is applied to the stored waveform signal on the surface conductive ballistic device that has this specific character in order to prevent.

If be "No" in step S13, flow process promptly enters step S16.If be "Yes" in step S13, flow process promptly enters step S14, simultaneously according to the peak value of peak value setting signal Tv by peak value initialization circuit 8 setting pulse signals.At step S15, peak value of pulse initialization circuit 8 output peak-data Lpx and Lpy.Pulse generator 6 and 7 is exported driving pulse Px and the Py that peak value is set that has based on peak-data Lpx and Lpy respectively.Under such mode, apply the pairing shift pulse of surface conductive ballistic device characteristic (storage signal) selected among the step S11 thereon.At step S16, check this process whether all to finish for all surface conduction ballistic device of display panel 1.If be "No" in step 16, then flow process proceeds to step 17, and at this moment matrix switch output control signal Tsw selects to apply the next surface conductive ballistic device of stored waveform signal.

The result as shown in Figure 6, the emission characteristic curve (a) of surface conductive ballistic device is changed into indicatrix (c).Emission current under driving voltage Vf1 becomes Ie2.So the electron emission characteristic of all surface conduction ballistic device of display panel 1 can homogeneous.

Second embodiment

The following describes the second embodiment of the present invention.

In a second embodiment, before being actually used in display image, each surface conductive ballistic device all it has been measured electron emission characteristic.If the electron emission characteristic of each device is variant, just must proofreaies and correct and make it consistent.The method of proofreading and correct comprises several steps, and need apply the voltage of following setting in each step.Specifically, in measuring process, add driving voltage VE _Measure, be used for measuring the emission current characteristic of each device; In regulating step, add characteristic shift voltage V _Displacement, be used for each Devices Characteristics is adjusted to homogeneous; Add again and be used for the maximum voltage V of driving element with display image _DriveThe relation of above-mentioned each voltage is as follows:

V _Drive＜VE _Measure＜V _Displacement

Like this, because VE _MeasureBe higher than V _Drive, can on each device, apply the driving voltage of using than display image in advance and want high voltage.So each Devices Characteristics is not changed because of applying high pressure.In addition, owing to established V _Displacement＞VE _Measure, V _DisplacementIt is the maximum voltage that is added on each device.Therefore by applying V _DisplacementJust the electron emission characteristic of each device can be proofreaied and correct to desirable value.Also owing to established V _Displacement＞V _Drive, adjusted to unanimity in each Devices Characteristics, each Devices Characteristics just can not change in actual use.

Fig. 9 is a block diagram, shows the layout of equipment of the electron emission characteristic homogenization of the bright surface conductive ballistic device that is used for making display panel 1.Omit its detailed description with same parts corresponding in the same numeral presentation graphs 9 among Fig. 3.

In a second embodiment, note between device current And if the emission current Ie very strong correlation being arranged with respect to driving voltage Vf.This embodiment and difference shown in Figure 3 are to make device current If homogenization with the electron emission current Ie of equilibrium from the surface conductive ballistic device of display panel, for this purpose, are provided with the current probe 5 of the device current If that is used for measuring each device.The control circuit that label 9 refers to corresponding to control circuit 9.

Figure 10 is a curve chart, and in the ballistic device of surface conductive shown in it, device current If is expressed as the function of driving voltage Vf, and this device has the different emission characteristicss that produce in the technical process of the multiple electron beam source of making display panel 1.The indicated device current If of curve chart among Figure 11 changes at the maximum Vfm of stored waveform signal, and device is observed when being driven less than the signal of Vfm by the predetermined peak value that has.Emission current value Ie changes in the unit of surface conductive ballistic device.But, owing between device current And if the emission current Ie very strong dependency relation is arranged, so can change the device current characteristic and make the emission characteristics unanimity by applying the stored waveform signal.

The following describes the method for the device current If homogenization of the surface conductive ballistic device that makes display panel 1.

As for the work of circuit shown in Figure 9, the measuring object of second embodiment is device current If, promptly is different from the emission current Ie of first embodiment.In addition, can carry out with first embodiment in same operation, before applying the stored waveform signal, come the measuring element electric current.

Subsequently, under the characteristic situation shown in reference Figure 11, the stored waveform signal is applied on the ballistic device that demonstrates device current characteristic curve (a) among Figure 10, makes device current consistent with the device current (If2) of being scheduled to.The result as shown in figure 12, so far the surface conductive ballistic device that has demonstrated device current characteristic curve (a) demonstrates characteristic curve (c), makes it to obtain under driving voltage Vf1 the identical device current If2 of device current with the surface conductive ballistic device that demonstrates characteristic curve (b).By display panel 1 all surface conductive ballistic devices are carried out above-mentioned work, just can make all surface conduction ballistic device of display panel 1 have consistent device current.

When driving when obtaining the display panel 1 of uniform properties according to aforesaid way by applying the stored waveform signal less than any driving voltage of device stores waveform signal peak value with its value, each surface conductive ballistic device that resulting display panel 1 is had all demonstrates the emission current Ie of unanimity.

In a manner described, can eliminate the difference of each surface conductive ballistic device emission current of display panel 1, image be shown have equally distributed brightness.

As for the work of second embodiment, the peak value of stored waveform signal is determined in the detection that wherein detection of the emission current Ie of the flow process (Fig. 7 and Fig. 8) of first embodiment is replaced device current If.So can carry out omitting its detailed description with the first embodiment identical operations.

The 3rd embodiment

The third embodiment of the present invention is described below.

In the 3rd embodiment, before being actually used in display image, measured each surface conductive ballistic device the radiative brightness of its corresponding each fluorophor.If the brightness of each fluorophor is variant, just must proofreaies and correct and make it consistent.The method of proofreading and correct comprises several steps, and need apply the voltage of following setting in each step.Specifically, in measuring process, add driving voltage VL _Measure, the brightness that is used for measuring each fluorophor; In regulating step, add characteristic shift voltage V _Displacement, be used for brightness regulation with each fluorophor to homogeneous; Add again and be used for the maximum voltage V of driving element with display image _DriveThe relation of above-mentioned each voltage is as follows:

V _Drive＜VL _Measure＜V _Displacement

Like this, because VL _MeasureBe higher than V _Drive, can on each device, apply the driving voltage of using than display image in advance and want high voltage.So each Devices Characteristics is not changed because of applying high pressure.In addition, owing to established V _Displacement＞VL _Measure, V _DisplacementIt is the maximum voltage that is added on each device.Therefore by applying V _DisplacementJust the electron emission characteristic of each device can be proofreaied and correct to desirable value.Also owing to established V _Displacement＞V _Drive, adjusted to unanimity in the brightness of each fluorophor, each Devices Characteristics just can not change in actual use.

Figure 13 has shown the configuration of equipment that is used for changing surface conductive ballistic device electron emission characteristic according to third embodiment of the invention with the block diagram form.Refer to identical parts with reference number identical in Fig. 3 or 9, and omit its detailed description.

This equipment makes the light emission brightness unanimity corresponding to the fluorophor of each ballistic device.Equipment shown in Figure 13 and difference shown in Figure 3 are, the brightness measuring device for camera 13 of the light of allocating and measuring fluorophor emission brightness and the luminance transformation that records replaced the current probe 12 that is used for measuring emission current Ie for the emission current Ie corresponding with it or the brightness signal extraction circuit 14 of device current If.

The following describes with this equipment and make method corresponding to the brightness homogenization of the crest of the fluorophor of each ballistic device.

Because the light of fluorophor emission brightness can be regarded as and be proportional to emission current Ie, electron emission characteristic can change with the variation of institute's photometry emission brightness.Specifically, the brightness data that is recorded by brightness measuring device 13 is transformed to and ballistic device emission current Ie or the corresponding value B of device current If through brightness signal extraction circuit 14, and this value B then exports control circuit 91 to.Identical with method described in first and second embodiment, emission current Ie or device current If under predetermined drive voltages Vf are changed.This situation is different from that part is among first and second embodiment, and to the variation of brightness, the part that comprises the light emission characteristics of fluorophor changes proofreaies and correct.By all ballistic devices are carried out aforesaid operations, just can make the device current homogeneous of all surface conductive ballistic devices of display panel 1.

Can be undertaken by the same way as (flow process among Fig. 7 and 8) of first embodiment by the process of control circuit 91 controls among the 3rd embodiment, omit its detailed description here.

When its all surface conduction ballistic device all applies the stored waveform signal according to aforesaid way and the display panel 1 of having obtained consistent electron emission characteristic when being driven less than the driving voltage Vf of the used stored waveform signal peak of arbitrary surfaces conduction ballistic device by its value, just can make display panel 1 on all viewing areas, obtain uniform light and launch brightness.

Figure 14 is a flow chart, shows and understands the step of making multiple electron beam source of the present invention.

At step S100, will be illustrated as the back, on substrate, form electrode and conductive film.At step S101, between above-mentioned electrode, apply voltage and form electron emission part.At step S102, electron emission part is electrified to carry out activation.Under aforesaid way, finish basic multiple electron beam source.In addition, all surface of having carried out as characteristics of the present invention that makes conducts ballistic device characteristic homogenization process (step S103), and can obtain uniform brightness on the All Ranges of display panel.

The configuration of the display panel of the 3rd embodiment and manufacture method

The configuration and the manufacture method of image display display panel of the present invention have been used below with reference to specific example explanation.

Figure 15 is the perspective view that the part of used display panel 1 among the present invention is cut, and shows the internal structure of this plate.

Referring to Figure 15, label 1005 refers to that back plate, 1006 refers to that side plate, 1007 refers to panel.These several plates 1005 to 1007 have formed the container that keeps the vacuum of display panel 1.In order to constitute this airtight container, each plate that must be tightly connected makes its joint portion keep full intensity and air tight condition.For example clinkering is applied to these joint portions with frit, and in 400～500 ℃ in air or blanket of nitrogen sintering 10 minutes or longer time link these plates with sealing.The following describes the method for the gas-tight container of finding time.

Be fixed with substrate 1001 on the back plate 1005, be formed with N * M surface conductive ballistic device above.M and N are 〉=2 positive integer, suitably set according to the target number of display element.For example, in high definition TV shows, preferably N 〉=3000 and M 〉=1000.In the present invention, N=3071 and M=1024.This N * M surface conductive ballistic device lined up the simple matrix of M row wiring layer 1003 and N column wiring layer 1004.The part of being made up of plate 1001 to 1004 is called multiple electron beam source.The manufacture method and the structure of multiple electron beam source are described in detail in detail below.

Among the present invention, the substrate 1001 of multiple electron beam source is fixed on the back plate 1005 of gas-tight container.If but the substrate 1001 of multiple electron beam source has enough intensity, just can itself be used as the back plate of gas-tight container to multiple electron source substrate 1001.

In addition, on the lower surface of panel 1007, be formed with fluorescent membrane.The display panel 1 of present embodiment is the display panel that is used for color display apparatus, and fluorescent membrane 1008 scribbles red (R), green (G) and blue (B) fluorophor, promptly is used for the three primary colors fluorophor in CRT (cathode ray tube) field.Shown in Figure 16 A, this R, G and B fluorophor are used by the strip collocation form.Between the fluorophor band, be provided with black conducting materials 1010.Even the purpose of black conducting materials be set be can have in the electron beam irradiation position also can prevent when being shifted to a certain degree color overlap bad, prevent owing to cover outside reflection of light and cause and show that contrast reduces and prevents because electron beam causes fluorescent membrane charged, or the like.This black conducting materials 1010 mainly is made of graphite, but also can adopt any material that can achieve the above object.

The collocation form of the fluorophor of three primary colors R, G and B is not limited to the strip shown in Figure 16 A.For example can adopt rounded projections arranged mode or the alternate manner shown in Figure 16 B.

When forming monochromatic display panel, monochromatic fluorescent material must be used for fluorescent membrane 1008.At this moment, might not use the black conductor material.

In addition, on the back plate side surface of fluorescent membrane 1008, be provided with generally use in the CRT field metal-backed 1009.Metal-backed 1009 purpose is set is to improve the light utilization efficiency of the light of fluorescent membrane 1008 emissions by the direct reflection part; protection fluorescent membrane 1008 is not the anion collision; be used as the electrode that applies beam voltage with metal-backed 1009; with metal-backed 1009 conducting paths as the electron beam of excited fluophor film 1008, or the like.Metal-backed 1009 form in this wise: on panel 1007, form fluorescent membrane 1008, to this fluorescent membrane surface implement smoothing handle, then with vacuum deposition method aluminium (Al) in the deposit thereon.Note,, do not use metal-backed 1009 when the fluorescent material that adopts low-voltage type during as fluorescent membrane 1008.

In addition, in order to use accelerating voltage or, the transmission electrode by the ITO system for example can be set between panel 1007 and fluorescent membrane 1008 in order to improve the conductivity of fluorescent film.

Joint Dx1 to Dxm is set, and Dy1 to Dyn and Hv are the electric connecting joints that is used for airtight construction, are used for display panel 1 is electrically connected on the relevant circuit (not showing bright).Joint Dx1 to Dxm is electrically connected on the row wiring layer 1003 of multiple electron beam source, and joint Dy1 to Dyn is connected on the column wiring layer 1004 of multiple electron beam source, joint Hv then be electrically connected to panel metal-backed 1009 on.

For the gas-tight container of finding time, after forming gas-tight container, blast pipe and vacuum pump in the connection (all not showing bright) are evacuated to about 10 with gas-tight container ^-7The vacuum of torr.Seal blast pipe then.In order to keep the vacuum in the gas-tight container, before or after gas-tight container sealing and then, be formed with except that air film (not showing bright) in a pre-position wherein.This removes air film is the degasification material of mainly being made up of for example Ba by heating or RF heating, and its evaporation is formed.This gettering effect that removes air film can keep 1 * 10 in this gas-tight container ^-5To 1 * 10 ^-7The vacuum of torr.At this moment, that mainly form and have the dividing potential drop of the organic gas of 13～200 mass numbers to be adjusted to less than 10 by carbon and hydrogen ^-8Torr.

The basic configuration and the manufacture method of display panel 1 of the present invention so far have been described.

The manufacture method of used multiple electron beam source in the display panel 1 of the present invention is described below again.For multiple electron beam source used in the image display of the present invention, can adopt any materials, profile of surface conductive ballistic device and manufacture method arbitrarily, as long as this multiple electron beam source has the surface conductive ballistic device that is arranged in simple matrix.But the inventor has found that, in this class surface conductive ballistic device, a kind of device with the electron emission part be made up of the particulate film or its peripheral part can be obtained good electron emission characteristic and be easy to and make.Therefore, such device is the surface conductive ballistic device that is suitable for most being used in high brightness, the large-screen image display device.In display panel of the present invention, each surface conductive ballistic device has by film formed electron emission part of particulate or periphery.At first describe basic structure, manufacture method and the characteristic of this preferred surface conductive ballistic device, describe the structure that becomes the multiple electron beam source of simple matrix with a plurality of such cell configuration then.

The preferred structure of surface conductive ballistic device and manufacture method

Typical structure with surface conductive ballistic device of the electron emission part made by the particulate film or its periphery comprises the structure and the step-like structure of plane.

Planar surface conduction ballistic device

The at first structure and the manufacture method of illustrated planar type surface conductive ballistic device.This process is equivalent to the step S100 among Figure 14.

Figure 17 A and 17B are used for the plane graph and the profile of illustrated planar type surface conductive ballistic device structure.

Referring to Figure 17 A and 17B, label 1101 refers to substrate, and 1102 and 1103 refer to the electrode of device, and 1104 instruct conductive film, and 1105 refer to by the electron emission part that encourages forming process to form, and the film that 1113 finger activations form.

As substrate 1101, can use: various glass substrates, for example quartz glass and soda lime glass substrate; Various ceramic substrates, for example alumina substrate; Or any formation in the above is for example by SiO ₂The substrate of the insulating barrier of forming is formed on the substrate 1101 and parallel with substrate surface and mutual

relative device electrode

1102 and 1103 is to be made by electric conducting material.One of for example can select for use in the following material: Ni, Cr, Au, Mo, Pt, Ti, Cu, Pd and Ag; The alloy of these materials, for example In ₂O ₃-SnO ₂Quasi-metal oxides; And polysilicon and so on semi-conducting material for

example.Device electrode

1102 and 1103 can be easily with vacuum deposition and for example the pattern etching technology of photoetching or etching and so on form, but can adopt any other method (for example printing technology).

Device electrode

1102 and 1103 shape will be suitably design according to the application purpose of electron emission device.Generally, electrode gap L is designed to from hundreds of dusts to hundreds of the such scopes of μ m.The optimum range of display device is from counting μ m to tens of μ m.As for the thickness d of device electrode, generally be extremely to choose suitable value in the scope of some μ m from hundreds of dusts.

Conductive film 1104 is to be made by the particulate film.So-called particulate film is meant and contains a collection of particulate film of (comprising isolated aggregation).Under microscopic examination, show separated, that adjoin each other or mutual each stacked particulate in this particulate film.In the particulate film particle diameter of particulate from several dusts to thousands of dusts.Best particle size range is 10 dust to 200 dusts.When setting the thickness of particulate film suitably, considered following condition: the condition that is electrically connected with

device electrode

1002 or 1003, will encourage the condition of forming process, as described later resistance to be set to the condition of appropriate value in being used to of illustrating later with the particulate film.Specifically, thickness is set in several dusts to several 4 dusts and the scope of 10 dust to 500 dusts preferably.

The material that is used for forming the particulate film comprises: metal, for example Pd, Pt, Ru, Au, Ti, In, Cu, Cr, Fe, Zn, Sn, Ta, W and Pb; Oxide, for example PdO, SnO ₂, In ₂O ₃, PbO and Sb ₂O ₃Boride, for example HfB ₂, ZrB ₂, LaB ₆, CeB ₆, YB ₄With GdB ₄Carbide, for example TiC, ZrC, HfC, TaC, SiC and WC; Nitride, for example TiN, ZrN, HfN; Semiconductor, for example Si and Ge, and carbon.Can from above-mentioned material, select a kind of suitable material.

As mentioned above, conductive film 1104 is to form with the particulate film, and the sheet resistance of this film is set in 10 ³～10 ⁷In the scope of Ω/.

Owing to preferably conductive film 1104 is electrically connected with

device electrode

1102 and 1103, so this film is arranged to and these two electrodes lapping partly mutually.Referring to Figure 17 A and 17B, each appropriate section is stacked from the bottom up according to following order: substrate, device electrode, conductive film.This stacked order also can be to begin to be substrate, conductive film and device electrode from the bottom.

Electrode emission part 1105 is formed in the crack of conductive film 1104 parts.The resistance height of the resistance ratio periphery conductive film of electron emission part 1105.This crack all is to be formed on the conductive film 1104 through excitation forming process (illustrate later on).In some cases, in the portion of crack, be provided with the particulate material of granularity from the number dust to hundreds of dusts.Owing to be difficult to accurately describe the physical location and the shape of electron emission part, Figure 17 A and 17B have just schematically shown this crack portion.

The film of being made up of carbon or carbon compound 1113 covers electron emission part 1105 and periphery thereof.Film 1113 is to be formed by activation described later after the process of motivation.

Film 1113 is preferably made by single crystal graphite, polycrystalline graphite, amorphous carbon or their mixture, and its thickness≤500 dusts then is≤300 dusts in particular.

Same physical location or the shape that is difficult to accurately describe film 1113.Figure 17 A and 17B also just schematically show this film.Figure 17 A is a plane graph, and what show is the device of wherein a part of film being removed.

The preferred basic structure of device had illustrated already in the above.Actual use is following device in the present invention.

Substrate 1101 is made by soda lime glass, is made up of the Ni

film device electrode

1102 and 1103 above.The thickness d of device electrode is 1000 dusts, and the spacing L of electrode is 2 μ m.

Pd or PdO then are used as the main material of particulate film.The thickness of particulate film and width W are set at about 100 dusts and 100 μ m respectively.

The method for optimizing of making planar surface conduction ballistic device is described below.Figure 18 A to 18D is a profile, the manufacturing step of illustrated planar type surface conductive ballistic device.Identical parts among the label list diagrammatic sketch 18A to 18D identical with 17B with Figure 17 A omit its detailed description.

(1) at first shown in Figure 18 A, on substrate 1101, forms device electrode 1102 and 1103.Form device electrode 1102 with 1103 o'clock, with washing agent, pure water and the thoroughly clean substrate 1101 of organic solvent, with device electrode usefulness deposition of materials on substrate 1101.As the deposition process of this material, can adopt vacuum deposition or vacuum sputtering equal vacuum film technique.Form the figure of the electrode material of deposit then by photoetching process.So just, formed device electrode among Figure 18 A to (1102 and 1103).

(2) next forms conductive film 1104 shown in Figure 18 B.

In the forming process of conductive film, to the substrate of Figure 18 A, the solution of drying and this coating of sintering forms the particulate film thus then with the organic metal solution coat in elder generation.By photoetching process this particulate film is formed reservation shape again.The organic metal solution here is meant and contains the organo-metallic compound solution that is useful in the conductive film as the fine granules of essential element.In the present invention, be essential element with Pd, be to be coated with organic metallic solution simultaneously, but also can adopt spin coating method or spraying process with infusion process.

As the method that forms the conducting film of forming by the particulate film, can replace the method for the used organic metallic solution of coating of the present invention and adopt any other method, for example vacuum deposition method, sputtering method or chemical vapor deposition method.

(3) shown in Figure 18 C, apply suitable voltage with 1103 for device electrode 1102 from the power supply used of excitation forming process 1110, encourage forming process to form electron emission part 1105 (this process is equivalent to the excitation forming process among Figure 14) to carry out this.This excitation forming process is that the conductive film 1104 that is used for the particulate film is constituted electrifies, and suitably destroys, is out of shape or damage the part of this conductive film, thus film has been become the structure that is applicable to the electronics emission.In this conductive film that is made of the particulate film, this part (being electron emission part 1105) of having become the structure that is applicable to the electronics emission has the suitable crack in film.This film with electron emission part 1105 is compared with the film before the excitation forming process, and

device electrode

1102 and 1103 resistance of measuring increase greatly.

The method for electrically that rises of excitation forming process is described in detail in detail referring to Figure 19 below, Figure 19 illustration the waveform of the appropriate voltage that applies with power supply 1110 from the excitation forming process.

In the excitation forming process that the conductive film that the particulate film is constituted carries out, preferably adopt pulsed voltage.In the present invention, as shown in figure 19, apply the triangular pulse of pulse width T 3 continuously by pulse interval T 4.At this moment the peak value Vpf of triangular pulse one after the other increases.In addition, between each triangular pulse, insert monitoring pulse Pm, measure at the electric current that carries out flowing through under the above-mentioned insertion with ampere meter simultaneously with the formation state of monitoring electron emission part 1105 according to proper spacing.

In this embodiment, in 10 ^-5In the vacuum atmosphere of torr, pulse width T 3 is set at 1ms, and the pulse spacing is set at 10ms.Under each pulse, peak value Vpf increases 0.1V.Apply 5 triangular pulses at every turn, insert a monitoring pulse Pm.For exempting from that the excitation forming process is had adverse effect, the voltage Vpm of monitoring pulse is set at 0.1V.When device electrode 1102 and 1103 s' resistance becomes 1 * 10 ^-6Ω, promptly the electric current that records of ampere meter 1111 becomes 1 * 10 under the monitoring pulse applying ^-7A or more hour promptly stops electrifying of excitation forming process.

Notice that said method is comparatively desirable method for surface conductive ballistic device of the present invention.When changing the design of device, for example the spacing L between the material of particulate film or thickness or device electrode and the condition that electrifies preferably should change according to the change of designs.

4) shown in Figure 18 D, then with power supply 1112 suitable voltage is joined

device electrode

1102 and 1103 from activating, promptly begin activation and improve electron emission characteristic (this process is corresponding to step S102 among Figure 14).The activation here is to be used for making under proper condition the electron emission part 1105 that is formed by the excitation forming process to electrify, with carbon or carbon compound be deposited to electron emission part 1105 around (Figure 18 D is shown material 1113 with the carbon or the carbon compound material list of deposit).With the situation before electron emission part 1105 and the activation relatively, applying under the same voltage, emission current generally can increase by 100 times or bigger.

In activation, in 10 ^-2～10 ^-5Periodically apply potential pulse in the torr vacuum atmosphere, carbon that derives in the organic compound that comes deposit mainly from vacuum atmosphere, to exist or carbon compound.The material 1113 of deposit can be any single crystal graphite, polycrystalline graphite, amorphous carbon and composition thereof.The thickness of deposition materials 1113 is 500 dusts, preferably 300 dusts or littler.

Figure 20 A illustration from activating the waveform of the suitable voltage that is applied with power supply 1112, illustrated in greater detail a method for electrically of activation.In the present invention, carry out activation by periodically applying constant rectangular voltage.Specifically, the rectangular voltage Vac shown in the setting is 14V, and pulse width T 5 is 1ms, and pulse spacing T6 is 10ms.Notice that the above-mentioned condition that electrifies is comparatively desirable condition for making surface conductive ballistic device of the present invention.When the design of device changed, above-mentioned condition also preferably will change according to the variation of designs.

Referring to Figure 18 D, label 1114 refers to be connected to the anode electrode of DC high voltage source 1115 and ampere meter 1116, to capture the emission current Ie that the surface conductive ballistic device is launched.Notice that when before activation substrate 1101 being installed in display panel 1, use as anode electrode 1114 on the fluorophor surface of display panel 1.When activation applies voltage with power supply 1112, ampere meter 1116 is promptly measured the process of the monitoring activation of emission current Ie and is controlled the operation that activates with power supply 1112.Figure 20 B illustration the emission current that records by ampere meter 1116.

When from activating when beginning to apply pulse voltage with power supply 1112, emission current Ie increases with the passing of time, gradually to saturated seldom increase then.In the basic saturation point of emission current Ie, end to apply voltage with power supply from activating, finish activation then.

Notice that for making surface conductive ballistic device of the present invention, the above-mentioned condition of electrifying is preferred.When the design of device changed, these conditions also preferably changed with the variation of designs.

The conduction of planar surface shown in Figure 18 E ballistic device is made according to aforesaid way.

Notch cuttype surface conductive ballistic device

Another kind of typical surface conductive ballistic device, i.e. the notch cuttype surface conductive ballistic device that have by the film formed electron emission part of particulate or its periphery are described below.

Figure 21 is a profile, is used for illustrating the basic structure of this notch cuttype surface conductive ballistic device.

Referring to Figure 21, label 1201 refers to substrate, and 1202 and 1203 refer to device electrode, 1206 finger ladders formation parts, and 1204 refer to adopt the conductive film of particulate film, and 1205 refer to by the electron emission part that encourages forming process to form, the film that 1213 fingers are formed by activation.

Notch cuttype surface conductive ballistic device is different from above-mentioned planar surface conduction ballistic device part and is, forms on the parts 1206 at ladder to be formed with the side that a device electrode 1202 conductive films 1204 then are covered with stairstepping member 1206.So the device electrode spacing L of planar device shown in Figure 17 A and the 17B just is equivalent to the height of the ladder formation parts 1206 of notch cuttype device.For substrate 1201,

device electrode

1202 and 1203 and the conductive film 1204 that adopts the particulate film, can adopt planar surface conduction ballistic device describe in cited material.Form parts 1206 as for ladder, employing be SiO for example ₂And so on insulating material.

The following describes the manufacture method of this notch cuttype device.Figure 22 A to 22F is the profile of its manufacturing step of explanation.With identical parts among the label list diagrammatic sketch 22A to 22F identical among Figure 21, omit its detailed description.

(1) shown in Figure 22 A, on substrate 1201, forms device electrode 1203.

(2) shown in Figure 22 B, on stacked on the formed structure, be used to form the insulating barrier that ladder forms parts, for example be the SiO that forms by sputtering method ₂Layer.But also can adopt the another kind of vacuum deposition for example or printing to become embrane method.

(3) shown in Figure 22 C, device electrode 1202 is formed on the insulating barrier.

(4) shown in Figure 22 D, for example remove partial insulative layer and expose device electrode 1203 by corrosion.

(5) shown in Figure 22 E, form the conductive film 1204 that adopts the particulate film.In order to form conductive film 1204, can conduct the one-tenth embrane method of for example coating process and so on that adopts in the ballistic device as planar surface.

(6) identical with situation in the planar device, encourage forming process to form electron emission part (carry out with planar device in the identical excitation forming process of having described with respect to Figure 18 C already).

(7) identical with situation in the planar device, carry out activation deposit carbon or carbon compound (carry out with planar device in the identical activation forming process of having described with respect to Figure 18 D already) near electron emission part.

Under aforesaid way, made the notch cuttype surface conductive ballistic device shown in Figure 22 F.

The characteristics of used surface conductive ballistic device in the display device

The front has illustrated the collocation form and the manufacture method of plane and notch cuttype device.The Devices Characteristics that is used for display device is described below.

Figure 23 is a curve chart, has shown that emission current Ie applies the characteristic of voltage Vf and device current If applies the characteristic of voltage Vf with respect to device typical case with respect to device.Emission current Ie is little more than device current If, and this two class feature is difficult to according to same scale explanation.In addition, these characteristics change when the design parameter (comprising size and shape) of device changes.For this reason, two specific characters among Figure 23 are to show with unit independently respectively.

Used surface conductive ballistic device has following three characteristics about emission current Ie in this display device.

The first, when the voltage that will be higher than certain voltage (being called threshold voltage later on) was applied on the described device, emission current Ie just increased severely.When institute's making alive is lower than threshold voltage Vth, almost can not survey emission current.In other words, the surface conductive ballistic device is the nonlinear device about the threshold voltage Vth of emission current Ie that has clearly regulation.

The second, owing to emission current Ie changes according to the voltage Vf that is applied on the device, so can be by the size of voltage Vf control emission current.

The 3rd, because the electric current I e that launches from device is with respect to the response height that is applied to the voltage Vf on the device, the quantity of electric charge of the electronics of launching from device can the time span when applying voltage Vf be controlled.

Because above characteristics, this device is just applicable to display device.For example, when the display device that first characteristics is used for wherein be provided with corresponding to a collection of device of the pixel of display screen, this display screen can one after the other scan and carry out display operation.Specifically,, a voltage that is equal to or greater than threshold voltage Vth suitably is added on driven device, and the voltage that will be lower than threshold voltage Vth is added on the unselected device according to required light emission brightness.By switch device to be driven one after the other, display screen just can one after the other be scanned and carry out display operation.

When utilizing the second and the 3rd characteristics, can control light emission brightness.So can carry out light and shade shows.

Structure with the multiple electron beam source that is routed to simple matrix

The structure of multiple electron beam source is described below, and wherein above-mentioned surface conductive ballistic device is located on the substrate and is routed to simple matrix.

Figure 24 is a plane graph, shows the bright multiple electron beam source that is used for display panel 1 shown in Figure 15.The surface conductive ballistic device that respectively has the structure identical with 17B with Figure 17 A is disposed on the substrate 1001.These device wires simple matrix that wiring layer 1003 and column wiring layer 1004 form of embarking on journey then is formed with insulating barrier (not showing bright) to keep electric insulation in the intersection of these two kinds of layers.

Figure 25 is the profile along the A-A ' intercepting of Figure 24.

Made multiple electron beam source with said structure according to following manner.On described substrate, form the device electrode and the conductive film of row wiring layer 1003, column wiring layer 1004, interpolar insulating layer (not showing bright) and surface conductive ballistic device in advance.Give each device energising to encourage the forming process and the process of motivation through row wiring layer 1003 and column wiring layer 1004 then, can make foregoing multiple electron beam source thus.

Application examples

Figure 26 is a block diagram, illustration multi-functional display device, it can utilize on the display panel of surface conductive ballistic device of the present invention as electron emission device, shows from various image information source, for example the image information supplied with of TV broadcasting.

Referring to Figure 26, label 1 refers to that display panel of the present invention, 2101 refers to that the driver, 2102 of display panel 1 refers to that display panel controller, 2103 refers to that multiplexer, 2104 refers to that decoder, 2105 refers to that input/output interface circuit, 2106 refers to that CPU, 2107 refers to that pictcure generator, 2108 to 2110 refers to that video memory interface circuit, 2111 refers to that image input interface circuit, 2112 and 2113 refers to that TV signal receiver, 2114 refers to input unit.When the display device in this example received the TV signal that for example comprises video information and audio-frequency information, nature will produce video image and sound simultaneously.Here omitted the circuit of relevant audio-frequency information reception, separation, processing and storage etc. and the description of loud speaker, so the characteristics of these parts and this routine display panel there is no direct correlation.Relevant each functions of components will be according to the picture signal flow specification in following.

The TV signal receiver is to be used for receiving through the wireless transmitting system circuit of the TV picture signal that sends of electric wave transmission or space optical communication system for example.The standard that is used for receiving the TV signal is not particularly limited, and can adopt any in each standard of NTSC, PAL and SECAM.In addition, including the TV signal (for example by the so-called high definition TV of MUSE canonical representation signal) of greater amount scan line, then is to utilize the better signal source that is applicable to large display screen and the favourable characteristics of the display panel of extremely many pixels.The TV signal that TV signal receiver 2113 receives is exported to decoder 2104.2112 of TV signal receivers are the circuit that is used for receiving the TV picture signal that the class cable communication system by coaxial cable system or fibre system transmits.Identical with TV signal receiver 2113, there is no particular restriction for the TV signal standards that is received.The TV signal that TV signal receiver 2112 receives is also exported to decoder 2104.

Image input interface circuit 2111 is the circuit that are used for receiving from the picture signal of for example TV video camera or image reading scan device and so on image-input device supply.The picture signal that receives is exported to decoder 2104.Video memory interface circuit 2110 is to be used for receiving the circuit that is stored in picture signal in the video tape recorder (being reduced to VTR later on).The picture signal that receives is exported to decoder 2104.Video memory interface circuit 2109 is to be used for receiving the picture signal that is stored in the optic disk.The picture signal that receives is exported to decoder 2104.2108 of video memory interface circuits are the circuit that for example is used for receiving from the picture signal of the rest image dish one class device of storing static image data.The Still image data that receives is exported to decoder 2104.Input/output interface circuit 2105 is to be used for this display device is connected to outer computer, computer network or the circuit of printer one class output device for example.This input/output interface circuit 2105 not only I/O view data or character data/chart-information, in case of necessity can also be between the CPU2106 of imaging device and external device (ED) I/O control signal or numeric data.

Image generator 2107 be one based on by input/output interface circuit 2105 from the pictorial data of outside input or character/chart-information or the circuit that produces subsequently displaying transmitted image data from pictorial data or character/chart-information of CPU2106 output.This circuit is included as and produces the necessary circuit of view data, has to be used for the writable memory, storage of storing image data or character/chart-information corresponding to the read-only memory of the image pattern of character code and be used for handling the treatment of picture device.The display image data of circuit generation exports decoder 2104 to thus.But, display image data can be outputed to external computer networks or printer by input/output interface circuit 2105 in case of necessity.

CPU2106 mainly carries out and the relevant operation of display device operation control, and the generation of display image, selection and editor.For example, control signal is flowed to multiplexer 2103, suitably selecting on the display panel or the picture signal that shows is treated in combination on display panel thus.Meanwhile, produce a control signal for display controller 2102 according to picture signal to be shown, suitably to control the operation of display panel, comprise the number of scanning lines in frame display frequency, scan method (for example interlacing scan or non-interlace) and the frame.In addition, the direct output image data of CPU2106 or character/chart-information are given pictcure generator 2107, or by input/output interface circuit 2105 visit outer computers or memory with input image data or character/chart-information.CPU2106 can be used for other purpose.For example, the CPU2106 directly function with generation information or process information is relevant, and this is similar to personal computer or word processor.In addition, as mentioned above, CPU2106 can be connected to external device (ED) cooperating in external computer networks and the numerical computations for example by input/output interface circuit 2105.

Input unit 2114 is used for instruction, program or data are inputed to CPU2106 by the user.Except that keyboard and mouse, can adopt input unit miscellaneous such as joystick, bar code reader or speech recognition equipment etc.Decoder 2104 is that the various picture signal reciprocal transformations that are used for circuit 2107 to 2113 is imported are tricolor signal or luminance signal and I and Q signal.As shown in phantom in Figure 26, decoder 2104 preferably comprises video memory, so that can handle the TV signal of for example MUSE one class signal that need have video memory to carry out reciprocal transformation.Video memory helps to show rest image.In addition, video memory can help carrying out following image processing: comprise and water down, insert, amplify, dwindle and synthetic, and with the

image generator

2107 and 2106 edited image data that match.

Multiplexer 2103 is suitably selected display image according to the control signal of CPU2106 input.Specifically, multiplexer 2103 is selected required picture signal from the picture signal of the reciprocal transformation of decoder 2104 inputs, then selected picture signal is exported to driver 2101.At this moment, multiplexer 2103 can realize so-called multiwindow TV, the TV screen zoning territory here, by in the demonstration time of a frame selectively the converted image signal each the zone in the demonstration a collection of image.Display controller 2102 is to be used for coming the circuit of the operation of Control Driver 2101 according to the control signal of CPU2106 input.

For the basic operation of display panel, display controller 2102 output is used for controlling the signal of the operating sequence in display panel used driving power source (not showing bright) and gives driver 2101.As the method that drives display panel, display controller 2102 outputs are used for the signal of control frame display frequency or scan method (for example interlacing scan or non-interlace) and give driver 2101.Display panel controller 2102 can be exported the signal that is associated with adjusting picture quality (brightness, contrast, tone and the definition that comprise display image) as required and give driver 2101.Driver 2101 is the circuit that are used for producing the drive signal that offers display panel 1.Driver 2101 is according to the picture signal of multiplexer 2103 inputs and the control signal work of display panel controller 2102 inputs.

Each relevant functions of components has been described above.In this example, the display device with collocation form shown in Figure 26 can show on display panel 1 from the image information of various image information source inputs.Exactly, make the decoded device of various picture signals that comprises the TV broadcast singal do reciprocal transformation, do suitably selection and input to driver 2101 by multiplexer 2103.Display panel controller 2102 produces according to picture signal to be shown and is used for the control signal of Control Driver 2101 operations.Driver 2101 provides drive signal for display panel 1 according to this picture signal and control signal.By such operation, on display panel 1, demonstrate image.These a series of operations are integrally controlled by CPU2106.

The view data that display device in this example is not only selected in the relevant a collection of pictorial information among the included video memory of display decoder 2104, pictcure generator 2107 and the CPU2106, can also carry out that image processing comprises amplification, dwindles, rotates, moves, profile strengthens for image information to be shown, towards what is said or talked about, interpolation, colour switching and aspect ratio transformation, and the picture editting who comprises synthetic, deletion, combination, displacement and insertion.Though in the description of this example, specifically do not speak of, can be provided with and be used for image processing and editor and similarly be exclusively used in audio-frequency information and handle circuit with editor.

Display device in this example can be realized the function of all devices, for example image editing apparatus, for example computer or word processor of TV broadcasting display unit, teleconferencing terminal device, rest image and dynamic image and so on office work terminal installation, game machine or the like.Thereby this display device all is widely used to the individual in the industry neutralization.Figure 26 only shows bright employing with a kind of configuration example of this surface conductive ballistic device as the display device of the display panel of electron source, and obviously display device is not limited to show bright collocation form here.For example, in the building block shown in Figure 26, and be that the relevant circuit of unnecessary function can omit to using purpose.On the contrary, can set up the building block that closes in application purpose.When this display device when the video telephone, transmission/receiving circuit of preferably setting up TV video camera, microphone, lighting device and comprising modulator-demodulator then.

Since this display device be the surface conductive ballistic device as its electron source, just can realize slim display panel, thereby can reduce the degree of depth of display device.In addition, high brightness and wide viewing angle are arranged, just can make corresponding imaging device show lively image with the sense of reality and strong printing owing to the display panel that with the surface conductive ballistic device is electron source is easy to maximize.

The equipment that the present invention can be used for the system that is made up of a collection of device such as master computer, interface and printer or be used for only being made up of single device.In addition, the present invention also can be used for by provide program to realize situation of the present invention to system or equipment.At this moment, the storage medium of having stored according to program of the present invention has just constituted the present invention.Said system or equipment are then read described program to this system or equipment by storage medium from then on, work according to the mode of regulation in advance.

As mentioned above, can provide such multiple electron beam source according to the present invention, it has eliminated the difference of the surface conductive ballistic device emission characteristics that produces in making the electron source process, and the electron emission characteristic of homogeneous can be provided.

When employing had the electron source of above-mentioned character, just providing can uniform luminance distribute realized the imaging device of high quality graphic.

In addition, when storage voltage (shift voltage) being set to when coming drive surfaces conduction ballistic device outside the normal voltage scope, just can prevent that the surface conductive ballistic device from changing its characteristic when operate as normal.

Also because the electron emission characteristic of each surface conductive ballistic device of this multiple electron beam source can just can have various methods to measure and regulate above-mentioned emission characteristics with any measurement the in emission current, device current and the light emission brightness.

Owing to can provide numerous conspicuous different widely embodiment of the present invention not breaking away under the prerequisite of spirit of the present invention and scope, thereby should be realized that the present invention except the content of appended claim book defined, be not limited to these specific forms of implementation.

Claims

1. an adjusting has the method for the electron generating apparatus characteristic of multiple electron beam source, described multiple electron beam source comprises a collection of surface conductive ballistic device and the drive unit that is used for to each surface conductive ballistic device outputting drive voltage, and described method comprises the steps: to apply the electron emission characteristic that feature measurement voltage is measured this batch surface conductive ballistic device; Try to achieve the desirable value of electron emission characteristic this batch surface conductive ballistic device electron emission characteristic to be shifted according to the electron emission characteristic that records; And apply the characteristic shift voltage for electron emission characteristic this batch surface conductive ballistic device to be shifted, so that the electron emission characteristic of this batch surface conductive ballistic device becomes desirable value, characteristic shift voltage wherein is higher than feature measurement voltage, and feature measurement voltage is higher than above-mentioned driving voltage.

2. method according to claim 1, be characterised in that: the dividing potential drop at organic gas is no more than 10 ^-8Apply described characteristic shift voltage in the atmosphere of torr.

3. method according to claim 1 is characterised in that the method also comprises the steps: to measure once more the characteristic of described this batch surface conductive ballistic device after applying the characteristic shift voltage; And according to this result who measures once more, the surface conductive ballistic device to be shifted to described electron emission characteristic applies the characteristic shift voltage again.

4. method according to claim 1, be characterised in that: above-mentioned measuring process comprises, at each emission current of launching from described surface conductive ballistic device of measuring when described surface conductive ballistic device applies feature measurement voltage.

5. method according to claim 1, be characterised in that: above-mentioned measuring process is included in each device current that flows of measuring in described surface conductive ballistic device when described surface conductive ballistic device applies feature measurement voltage.

6. method according to claim 1, be characterised in that: above-mentioned measuring process is included in each the measurement by the light emission brightness from the fluorophor of the electron radiation of described surface conductive ballistic device when described surface conductive ballistic device applies feature measurement voltage, and the luminance transformation measured is the numerical value corresponding to one of the emission current of described surface conductive ballistic device and device current.

7. method of making electron generating apparatus, this equipment has multiple electron beam source, described multiple electron beam source comprises a collection of surface conductive ballistic device and is used for driving voltage is exported to the drive unit of each surface conductive ballistic device that described method comprises the steps: to be formed for the electrode and the conducting film of this batch surface conductive ballistic device on substrate; Electrify by the described conducting film of above-mentioned electrode pair and to be formed for the electron emission part of this batch surface conductive ballistic device; Activate these electron emission part; Apply feature measurement voltage and measure the electron emission characteristic of this batch surface conductive ballistic device; Try to achieve the desirable value of electron emission characteristic this batch surface conductive ballistic device electron emission characteristic to be shifted according to the electron emission characteristic of measuring; And apply the characteristic shift voltage for electron emission characteristic this batch surface conductive ballistic device to be shifted, make the electron emission characteristic of this batch surface conductive ballistic device become desirable value, wherein above-mentioned characteristic shift voltage is higher than described feature measurement voltage, and this feature measurement voltage is higher than aforementioned driving voltage.

8. as method as described in the claim 7, be characterised in that: the dividing potential drop at organic gas is no more than 10 ^-8Apply described characteristic shift voltage in the atmosphere of torr.

9. as method as described in the claim 7, be characterised in that: the method also comprises the steps, measures the characteristic of described this batch surface conductive ballistic device after applying the characteristic shift voltage once more; And according to this result who measures once more, the surface conductive ballistic device to be shifted to described electron emission characteristic applies the characteristic shift voltage again.

10. as method as described in the claim 7, be characterised in that: above-mentioned measuring process comprises, at each emission current of launching from described surface conductive ballistic device of measuring when described surface conductive ballistic device applies feature measurement voltage.

11. as method as described in the claim 7, be characterised in that: above-mentioned measuring process comprises, in each device current that flows in described surface conductive ballistic device of measuring when described surface conductive ballistic device applies feature measurement voltage.

12. as method as described in the claim 7, be characterised in that: above-mentioned measuring process comprises, when described surface conductive ballistic device applies feature measurement voltage, measure by light emission brightness each, and the luminance transformation measured is the numerical value corresponding to one of the emission current of described surface conductive ballistic device and device current from the fluorophor of the electron radiation of described surface conductive ballistic device.

13. an electron generating apparatus, this equipment comprises: multiple electron beam source wherein is arranged at a collection of surface conductive ballistic device on the substrate; And drive unit, being used for driving above-mentioned multiple electron beam source according to picture signal, this electron generating apparatus then is that method according to claim 7 is made.

14. an imaging device, this equipment comprises: electron generating apparatus described in the claim 13 and fluorophor, this fluorophor is launched light under the electron beam irradiation by described multiple electron beam source.