CN109390242B - Power device packaging structure and preparation method thereof - Google Patents
Power device packaging structure and preparation method thereof Download PDFInfo
- Publication number
- CN109390242B CN109390242B CN201811133014.5A CN201811133014A CN109390242B CN 109390242 B CN109390242 B CN 109390242B CN 201811133014 A CN201811133014 A CN 201811133014A CN 109390242 B CN109390242 B CN 109390242B
- Authority
- CN
- China
- Prior art keywords
- heat
- parts
- layer
- insulating
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention relates to a power device packaging structure and a preparation method thereof, wherein the method comprises the following steps: form heat conduction silica gel layer, insulating layer and circuit wiring layer on the metal substrate to imbed a thermal-insulated type plastic frame, will circuit wiring layer divides into first district and second district circuit wiring layer assemble drive element and corresponding first pin in the first district circuit wiring layer assemble power component and corresponding second pin in the second area form first thermal-insulated sealant layer in the thermal-insulated type plastic frame, form first thermal-insulated sealant layer, second thermal-insulated sealant layer and radiating block in proper order after that, form second thermal-insulated sealant layer at last. The power device packaging structure has the advantages of excellent sealing performance, good heat dissipation performance, good stability and long service life.
Description
Technical Field
The invention relates to the technical field of power device packaging, in particular to a power device packaging structure and a preparation method thereof.
Background
An intelligent power module is a power drive semiconductor power device package combining power electronics and integrated circuit technology. In an existing intelligent power module, in order to improve heat dissipation performance of the intelligent power module, a common method includes: one method is to provide a thermal insulation structure in the metal package substrate to block lateral diffusion of heat, and the other method is to provide a high thermal conductive block in the low thermal conductive package substrate. The heat dissipation performance of the existing intelligent power module needs to be further improved, and meanwhile, the excellent sealing performance and the excellent moisture resistance performance of the intelligent power module need to be ensured, so that the comprehensive performance of the intelligent power module is improved, the service life of the intelligent power module is prolonged, and the attention of people is attracted.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a power device packaging structure and a preparation method thereof.
In order to achieve the above object, the present invention provides a method for manufacturing a power device package structure, which includes the following steps:
1) providing a metal substrate, and forming a first annular concave hole at the peripheral edge of the lower surface of the metal substrate;
2) bonding a heat-conducting silica gel layer on the upper surface of the metal substrate;
3) depositing an insulating material on the heat-conducting silica gel layer to form an insulating layer;
4) forming a circuit wiring layer on the insulating layer;
5) removing part of the insulating layer and the heat-conducting silica gel layer on the metal substrate to form a second annular concave hole, wherein the second annular concave hole exposes the upper surface of the metal substrate, a heat-insulating plastic frame is embedded into the second annular concave hole, and the circuit wiring layer is divided into a first area and a second area, wherein the area inside the heat-insulating plastic frame is the first area, and the area outside the heat-insulating plastic frame is the second area;
6) mounting a driving element and a corresponding first pin in the first region of the circuit wiring layer, and mounting a power element and a corresponding second pin in the second region of the circuit wiring layer;
7) injecting a certain amount of first heat-insulating resin material into the heat-insulating plastic frame to form a first heat-insulating sealing adhesive layer, wherein the first heat-insulating sealing adhesive layer completely covers the driving element, the first heat-insulating sealing adhesive layer covers a part of the first pins, and the upper surface of the first heat-insulating sealing adhesive layer is flush with the top surface of the heat-insulating plastic frame;
8) placing the metal substrate assembled with the driving element, the power element and the pins in a first mold, wherein the lower surface and the side surface of the metal substrate are tightly attached to the first mold, injecting a certain amount of first heat-conducting resin material to form a first heat-conducting sealing adhesive layer, the first heat-conducting sealing adhesive layer completely covers the power element and the upper surface of the metal substrate, the first heat-conducting sealing adhesive layer covers a part of the first pins and the second pins, and the upper surface of the first heat-conducting sealing adhesive layer is flush with the top surface of the heat-insulating plastic frame and then taken out of the first mold;
9) removing part of the metal substrate, exposing part of the bottom surface of the heat insulation type plastic frame and the heat conduction silica gel layer to form a first blind hole below the first area, and then injecting a certain amount of second heat insulation type resin material to form a second heat insulation sealing glue layer, wherein the bottom surface of the second heat insulation sealing glue layer is flush with the lower surface of the metal substrate;
10) removing part of the first heat conduction sealing adhesive layer to form a second blind hole above the power element, and then tightly embedding the heat dissipation block into the second blind hole, so that the thickness of the heat conduction sealing adhesive layer between the bottom surface of the heat dissipation block and the top surface of the power element is 100-200 microns, and the upper end of the heat dissipation block is exposed out of the first heat conduction sealing adhesive layer;
11) then arrange in the second mould in, the upper surface of radiating block with the second mould closely laminates, pours into a certain amount of second heat conduction type resin material into to form second heat conduction sealant layer, second heat conduction sealant layer is full of first annular shrinkage pool, just second heat conduction sealant layer covers completely the metal substrate's lower surface and side surface the bottom surface of second heat insulation sealant layer the upper surface and the side surface of first heat conduction sealant layer the upper surface of first heat insulation sealant layer with the side surface of radiating block.
Preferably, in the step 1), the metal substrate is made of one of aluminum, copper and stainless steel, the first annular concave hole is formed by wet etching or dry etching, and the depth of the first annular concave hole is 0.5-1 mm.
Preferably, in the step 3), the insulating layer is formed by depositing silicon nitride, boron nitride, or silicon carbide by a PECVD method or depositing aluminum oxide by an ALD method, and has a thickness of 80 to 150 μm.
Preferably, the step 4) of forming a circuit wiring layer on the insulating layer includes the specific steps of: and bonding a copper foil on the insulating layer, and removing part of the copper foil through an etching process to form the circuit wiring layer.
Preferably, in the step 5), the material of the heat insulation type plastic frame comprises the following components in percentage by weight: 20-40 parts of ABS resin, 30-40 parts of PET resin, 15-25 parts of polycarbonate, 5-10 parts of PMMA resin, 5-10 parts of glass fiber, 4-8 parts of aluminum silicate powder, 3-6 parts of expanded perlite powder and 3-5 parts of magnesium silicate powder; be provided with the first shrinkage pool that supplies the metal wire to pass on the first side of thermal-insulated type plastics frame, in the thermal-insulated type plastics frame with be provided with the confession on the second side that first side is relative second shrinkage pool that first pin passed.
Preferably, in the step 7), the first heat-insulating resin material includes an epoxy resin AB paste and aluminum silicate powder.
Preferably, in the step 8), the first thermal conductive resin material includes the following components in percentage by weight: 20-40 parts of PET resin, 20-30 parts of PBT resin, 10-20 parts of PS resin, 5-8 parts of alumina powder, 4-6 parts of boron nitride powder, 3-6 parts of silicon nitride powder and 4-6 parts of silicon carbide powder; in the step 9, the second heat-insulating resin material comprises the following components in percentage by weight: 20-40 parts of ABS resin, 30-40 parts of PET resin, 15-25 parts of polycarbonate, 5-10 parts of PMMA resin, 5-10 parts of glass fiber, 4-8 parts of aluminum silicate powder, 3-6 parts of expanded perlite powder and 3-5 parts of magnesium silicate powder.
Preferably, in the step 10), the material of the heat dissipation block is one of graphite, copper and aluminum; in the step 11), the second heat-conductive resin material comprises the following components in percentage by weight: 20-40 parts of PET resin, 20-30 parts of PBT resin, 10-20 parts of PS resin, 1-3 parts of alumina powder, 1-3 parts of boron nitride powder and 1-2 parts of silicon carbide powder.
The invention also provides a power device packaging structure which is prepared by the method.
Compared with the prior art, the invention has the beneficial effects that:
in the power device packaging structure, the heat-conducting silica gel layer is bonded on the metal substrate, and then the insulating layer is formed by deposition, so that the heat-conducting performance and the anti-seismic performance of the whole power device packaging structure can be improved, meanwhile, the second annular concave hole is formed in the insulating layer and the heat-conducting silica gel layer on the metal substrate and is embedded into the heat-insulating plastic frame, the heat-insulating performance of the heat-insulating plastic frame can be effectively improved by optimizing the material and the specific content of the heat-insulating plastic frame, the control element and the power element can be separately installed, the heat generated by the power element can be prevented from being transferred to the control element, and the influence of the power element on the performance of the control element can be eliminated; the heat dissipation block is arranged above the power element, so that the heat conduction performance of the power element is effectively improved, and the heat generated by the power device is conveniently and quickly diffused; the material of the second heat-insulating type resin material is the same as that of the heat-insulating type plastic frame, so that the second heat-insulating type resin material is easier to bond with the heat-insulating type plastic frame, the driving element is completely in a heat-insulating environment, the second heat-insulating type resin material is ensured to work at a proper temperature, and the service life of the second heat-insulating type resin material is prolonged. In addition, in the preparation method of the power device packaging structure, the epoxy resin AB glue is injected into the heat insulation type plastic frame to form the first heat insulation sealing glue layer, then the first heat conduction sealing glue layer is formed in the first mold, the second heat insulation sealing glue layer and the heat dissipation block are formed, and finally the second heat conduction sealing glue layer is formed in the second mold, so that the sealing performance and the moisture resistance of the whole power device packaging structure are effectively improved while the excellent heat dissipation performance is ensured, and the service life of the power device packaging structure can be prolonged.
Drawings
Fig. 1 is a schematic structural diagram of a power device package structure according to the present invention.
Fig. 2 is a bottom view of the power device package structure of the present invention.
Detailed Description
As shown in fig. 1-2, the present invention provides a power device package structure, which includes a metal substrate 1, a first annular recess 11 formed around a periphery of a lower surface of the metal substrate 1, a heat conductive silicone layer 12 adhered to an upper surface of the metal substrate 1, an insulating layer 13 formed on the heat conductive silicone layer 12, a circuit wiring layer 14 formed on the insulating layer 13, a portion of the insulating layer 13 and the heat conductive silicone layer 12 on the metal substrate 1 being removed to form a second annular recess 15, the second annular recess 15 exposing an upper surface of the metal substrate 1, a heat insulation type plastic frame 2 embedded in the second annular recess 15, and the circuit wiring layer 14 being divided into a first area and a second area, wherein an area inside the heat insulation type plastic frame 2 is the first area, and an area outside the heat insulation type plastic frame 2 is the second area, be provided with the first shrinkage pool that supplies metal wire 21 to pass on the first side of thermal-insulated type plastic frame 2, in the thermal-insulated type plastic frame 2 with be provided with the second shrinkage pool that supplies first pin 31 to pass on the relative second side of first side, wherein metal wire 21 is used for circuit wiring in the first district with the electric connection between the circuit wiring in the second district.
Mounting a driving element 3 and a corresponding first pin 31 in the first region of the circuit wiring layer 14, and mounting a power element 4 and a corresponding second pin 41 in the second region of the circuit wiring layer 14; form first thermal-insulated sealing glue film 5 in thermal-insulated type plastic frame 2, first thermal-insulated sealing glue film 5 covers completely drive element 3, first thermal-insulated sealing glue film 5 covers part first pin 31, the upper surface of first thermal-insulated sealing glue film 5 with thermal-insulated type plastic frame 2's top surface flushes, first heat conduction sealing glue film 6 covers completely power element 4 with the upper surface of metal base 1, just first heat conduction sealing glue film 6 covers part first pin 31 with second pin 41, the upper surface of first heat conduction sealing glue film 6 with thermal-insulated type plastic frame 2's top surface flushes.
Removing part of the metal substrate 1, exposing part of the bottom surface of the heat insulation type plastic frame 2 and the heat conduction silica gel layer 12 to form a first blind hole 16 below the first area, then injecting a certain amount of second heat insulation type resin material to form a second heat insulation sealing adhesive layer 7, wherein the bottom surface of the second heat insulation sealing adhesive layer 7 is flush with the lower surface of the metal substrate 1, removing part of the first heat conduction sealing adhesive layer 6 to form a second blind hole 61 above the power element 4, the heat dissipation block 62 is tightly embedded into the second blind hole 61, so that the thickness of the heat conduction sealing adhesive layer between the bottom surface of the heat dissipation block 62 and the top surface of the power element 4 is 100-200 microns, the upper end of the heat dissipation block 62 is exposed out of the first heat conduction sealing adhesive layer 6, the second heat conduction sealing adhesive layer 8, and the first annular concave hole 11 is filled with the second heat conduction sealing adhesive layer 8, and the second heat-conducting sealant layer 8 completely covers the lower surface and the side surface of the metal base 1, the bottom surface of the second heat-insulating sealant layer 7, the upper surface and the side surface of the first heat-conducting sealant layer 6, the upper surface of the first heat-insulating sealant layer 5, and the side surface of the heat dissipation block 62.
The invention also provides a preparation method of the power device packaging structure, which comprises the following steps:
1) providing a metal substrate, forming first annular concave holes at the peripheral edge of the lower surface of the metal substrate, wherein the metal substrate is made of one of aluminum, copper and stainless steel, the first annular concave holes are formed through wet etching or dry etching, the depth of each first annular concave hole is 0.5-1 mm, the bonding tightness of a subsequently formed second heat-conducting sealing adhesive layer and the metal substrate is improved, and the sealing performance and the moisture resistance of the whole power device packaging structure are further improved;
2) a heat-conducting silica gel layer is bonded on the upper surface of the metal substrate, so that the heat-conducting performance and the anti-seismic performance of the whole power device packaging structure are improved;
3) depositing an insulating material on the heat-conducting silica gel layer to form an insulating layer, depositing silicon nitride, boron nitride or silicon carbide to form the insulating layer by a PECVD method, or depositing aluminum oxide by an ALD method to form the insulating layer, wherein the thickness of the insulating layer is 80-150 microns, so that the insulating property and the heat-conducting property between the metal substrate and the circuit wiring layer are improved, and heat generated when the power element works can be quickly transferred to the metal substrate;
4) forming a circuit wiring layer on the insulating layer, which comprises the following steps: bonding a copper foil on the insulating layer, and removing part of the copper foil through an etching process to form the circuit wiring layer;
5) get rid of part on the metal substrate the insulating layer with heat conduction silica gel layer forms second annular shrinkage pool, second annular shrinkage pool exposes the upper surface of metal substrate imbeds a thermal-insulated type plastic frame in the second annular shrinkage pool, will circuit wiring layer falls into first district and second district, wherein, the region within the thermal-insulated type plastic frame does first district, the region outside the thermal-insulated type plastic frame does the second district, the material of thermal-insulated type plastic frame includes following component according to the weight percentage calculation: 20-40 parts of ABS resin, 30-40 parts of PET resin, 15-25 parts of polycarbonate, 5-10 parts of PMMA resin, 5-10 parts of glass fiber, 4-8 parts of aluminum silicate powder, 3-6 parts of expanded perlite powder and 3-5 parts of magnesium silicate powder; a first concave hole for a metal wire to pass through is formed in a first side edge of the heat insulation type plastic frame, a second concave hole for the first pin to pass through is formed in a second side edge, opposite to the first side edge, of the heat insulation type plastic frame, the driving element and the power element can be separated due to the heat insulation type plastic frame, heat generated by the power element can be prevented from being transferred to the driving element, and further the influence of the power element on the performance of the driving element can be eliminated;
6) mounting a driving element and a corresponding first pin in the first region of the circuit wiring layer, and mounting a power element and a corresponding second pin in the second region of the circuit wiring layer;
7) a certain amount of first heat-insulating resin material is injected into the heat-insulating plastic frame to form a first heat-insulating sealing adhesive layer, the first heat-insulating sealing adhesive layer completely covers the driving element, the first heat-insulating sealing adhesive layer covers a part of the first pins, the upper surface of the first heat-insulating sealing adhesive layer is flush with the top surface of the heat-insulating plastic frame, the first heat-insulating resin material comprises epoxy resin AB glue and aluminum silicate powder, the preparation of the first heat-insulating sealing adhesive layer can be completed under the room temperature condition, the method is simple and easy to implement, and the manufacturing cost is reduced.
8) Placing the metal substrate assembled with a driving element, a power element and pins in a first mold, wherein the lower surface and the side surface of the metal substrate are tightly attached to the first mold, injecting a certain amount of first heat-conducting resin material to form a first heat-conducting sealant layer, the first heat-conducting sealant layer completely covers the power element and the upper surface of the metal substrate, the first heat-conducting sealant layer covers a part of the first pins and the second pins, and the upper surface of the first heat-conducting sealant layer is flush with the top surface of the heat-insulating plastic frame and then taken out of the first mold, wherein the first heat-conducting resin material comprises the following components in percentage by weight: 20-40 parts of PET resin, 20-30 parts of PBT resin, 10-20 parts of PS resin, 5-8 parts of alumina powder, 4-6 parts of boron nitride powder, 3-6 parts of silicon nitride powder and 4-6 parts of silicon carbide powder, wherein the first heat-conducting resin material contains more heat-conducting fillers, so that heat can be rapidly transferred;
9) removing part of the metal substrate, exposing part of the bottom surface of the heat insulation type plastic frame and the heat conduction silica gel layer to form a first blind hole below the first area, and then injecting a certain amount of second heat insulation type resin material to form a second heat insulation sealing glue layer, wherein the bottom surface of the second heat insulation sealing glue layer is flush with the lower surface of the metal substrate, and the second heat insulation type resin material comprises the following components in percentage by weight: 20-40 parts of ABS resin, 30-40 parts of PET resin, 15-25 parts of polycarbonate, 5-10 parts of PMMA resin, 5-10 parts of glass fiber, 4-8 parts of aluminum silicate powder, 3-6 parts of expanded perlite powder and 3-5 parts of magnesium silicate powder, so that the driving element is completely in a heat insulation environment, the driving element is ensured to work at a proper temperature, and the service life of the driving element is prolonged;
10) removing part of the first heat-conducting sealing adhesive layer to form a second blind hole above the power element, and then tightly embedding a heat dissipation block into the second blind hole, so that the thickness of the heat-conducting sealing adhesive layer between the bottom surface of the heat dissipation block and the top surface of the power element is 100-200 microns, the upper end of the heat dissipation block is exposed out of the first heat-conducting sealing adhesive layer, the heat dissipation block is made of one of graphite, copper and aluminum, and the heat dissipation performance of the power device packaging structure is effectively improved due to the heat dissipation block;
11) then, placing the heat dissipation block in a second mold, wherein the upper surface of the heat dissipation block is tightly attached to the second mold, and injecting a certain amount of second heat-conducting resin material to form a second heat-conducting sealant layer, the second heat-conducting sealant layer is filled with the first annular concave hole, and the second heat-conducting sealant layer completely covers the lower surface and the side surface of the metal substrate, the bottom surface of the second heat-insulating sealant layer, the upper surface and the side surface of the first heat-conducting sealant layer, the upper surface of the first heat-insulating sealant layer and the side surface of the heat dissipation block, wherein the second heat-conducting resin material comprises the following components in percentage by weight: 20-40 parts of PET resin, 20-30 parts of PBT resin, 10-20 parts of PS resin, 1-3 parts of alumina powder, 1-3 parts of boron nitride powder, 1-2 parts of silicon carbide powder and a second heat-conducting sealant layer, so that the sealing performance and the heat dissipation formation of the whole power device packaging structure are effectively improved.
Example 1
The invention provides a preparation method of a power device packaging structure, which comprises the following steps:
1) providing a metal substrate, forming first annular concave holes at the peripheral edge of the lower surface of the metal substrate, wherein the metal substrate is made of aluminum, the first annular concave holes are formed through wet etching, and the depth of each first annular concave hole is 0.8 mm;
2) bonding a heat-conducting silica gel layer on the upper surface of the metal substrate;
3) depositing an insulating material on the heat-conducting silica gel layer to form an insulating layer, and depositing silicon nitride by a PECVD method to form the insulating layer, wherein the thickness of the insulating layer is 90 microns;
4) forming a circuit wiring layer on the insulating layer, which comprises the following steps: bonding a copper foil on the insulating layer, and removing part of the copper foil through an etching process to form the circuit wiring layer;
5) get rid of part on the metal substrate the insulating layer with heat conduction silica gel layer forms second annular shrinkage pool, second annular shrinkage pool exposes the upper surface of metal substrate imbeds a thermal-insulated type plastic frame in the second annular shrinkage pool, will circuit wiring layer falls into first district and second district, wherein, the region within the thermal-insulated type plastic frame does first district, the region outside the thermal-insulated type plastic frame does the second district, the material of thermal-insulated type plastic frame includes following component according to the weight percentage calculation: 30 parts of ABS resin, 35 parts of PET resin, 20 parts of polycarbonate, 7 parts of PMMA resin, 8 parts of glass fiber, 6 parts of aluminum silicate powder, 4 parts of expanded perlite powder and 4 parts of magnesium silicate powder; a first concave hole for a metal wire to pass through is formed in a first side edge of the heat insulation type plastic frame, and a second concave hole for a first pin to pass through is formed in a second side edge, opposite to the first side edge, of the heat insulation type plastic frame;
6) mounting a driving element and a corresponding first pin in the first region of the circuit wiring layer, and mounting a power element and a corresponding second pin in the second region of the circuit wiring layer;
7) inject a certain amount of first thermal-insulated type resin material in the thermal-insulated type plastic frame to form first thermal-insulated sealing glue layer, first thermal-insulated sealing glue layer covers completely drive element, first thermal-insulated sealing glue layer covers part first pin, the upper surface on first thermal-insulated sealing glue layer with the top surface of thermal-insulated type plastic frame flushes, first thermal-insulated type resin material includes that epoxy AB glues and aluminium silicate powder, and epoxy AB glues and aluminium silicate powder's mass ratio is 15-25 within range.
8) Placing the metal substrate assembled with a driving element, a power element and pins in a first mold, wherein the lower surface and the side surface of the metal substrate are tightly attached to the first mold, injecting a certain amount of first heat-conducting resin material to form a first heat-conducting sealant layer, the first heat-conducting sealant layer completely covers the power element and the upper surface of the metal substrate, the first heat-conducting sealant layer covers a part of the first pins and the second pins, and the upper surface of the first heat-conducting sealant layer is flush with the top surface of the heat-insulating plastic frame and then taken out of the first mold, wherein the first heat-conducting resin material comprises the following components in percentage by weight: 30 parts of PET resin, 25 parts of PBT resin, 15 parts of PS resin, 6 parts of alumina powder, 5 parts of boron nitride powder, 4 parts of silicon nitride powder and 5 parts of silicon carbide powder;
9) removing part of the metal substrate, exposing part of the bottom surface of the heat insulation type plastic frame and the heat conduction silica gel layer to form a first blind hole below the first area, and then injecting a certain amount of second heat insulation type resin material to form a second heat insulation sealing glue layer, wherein the bottom surface of the second heat insulation sealing glue layer is flush with the lower surface of the metal substrate, and the second heat insulation type resin material comprises the following components in percentage by weight: 30 parts of ABS resin, 35 parts of PET resin, 20 parts of polycarbonate, 7 parts of PMMA resin, 8 parts of glass fiber, 6 parts of aluminum silicate powder, 4 parts of expanded perlite powder and 4 parts of magnesium silicate powder;
10) removing part of the first heat conduction sealing adhesive layer to form a second blind hole above the power element, and then tightly embedding a heat dissipation block into the second blind hole, so that the thickness of the heat conduction sealing adhesive layer between the bottom surface of the heat dissipation block and the top surface of the power element is 150 micrometers, the upper end of the heat dissipation block is exposed out of the first heat conduction sealing adhesive layer, and the heat dissipation block is made of aluminum;
11) then, placing the heat dissipation block in a second mold, wherein the upper surface of the heat dissipation block is tightly attached to the second mold, and injecting a certain amount of second heat-conducting resin material to form a second heat-conducting sealant layer, the second heat-conducting sealant layer is filled with the first annular concave hole, and the second heat-conducting sealant layer completely covers the lower surface and the side surface of the metal substrate, the bottom surface of the second heat-insulating sealant layer, the upper surface and the side surface of the first heat-conducting sealant layer, the upper surface of the first heat-insulating sealant layer and the side surface of the heat dissipation block, wherein the second heat-conducting resin material comprises the following components in percentage by weight: 30 parts of PET resin, 25 parts of PBT resin, 15 parts of PS resin, 2 parts of alumina powder, 2 parts of boron nitride powder and 1 part of silicon carbide powder.
Example 2
The invention also provides a preparation method of the power device packaging structure, which comprises the following steps:
1) providing a metal substrate, forming first annular concave holes at the peripheral edge of the lower surface of the metal substrate, wherein the metal substrate is made of copper, the first annular concave holes are formed through dry etching, and the depth of each first annular concave hole is 1 mm;
2) bonding a heat-conducting silica gel layer on the upper surface of the metal substrate;
3) depositing an insulating material on the heat-conducting silica gel layer to form an insulating layer, and depositing silicon carbide by a PECVD method to form the insulating layer, wherein the thickness of the insulating layer is 120 microns;
4) forming a circuit wiring layer on the insulating layer, which comprises the following steps: bonding a copper foil on the insulating layer, and removing part of the copper foil through an etching process to form the circuit wiring layer;
5) get rid of part on the metal substrate the insulating layer with heat conduction silica gel layer forms second annular shrinkage pool, second annular shrinkage pool exposes the upper surface of metal substrate imbeds a thermal-insulated type plastic frame in the second annular shrinkage pool, will circuit wiring layer falls into first district and second district, wherein, the region within the thermal-insulated type plastic frame does first district, the region outside the thermal-insulated type plastic frame does the second district, the material of thermal-insulated type plastic frame includes following component according to the weight percentage calculation: 40 parts of ABS resin, 30 parts of PET resin, 25 parts of polycarbonate, 10 parts of PMMA resin, 10 parts of glass fiber, 5 parts of aluminum silicate powder, 6 parts of expanded perlite powder and 3 parts of magnesium silicate powder; a first concave hole for a metal wire to pass through is formed in a first side edge of the heat insulation type plastic frame, and a second concave hole for a first pin to pass through is formed in a second side edge, opposite to the first side edge, of the heat insulation type plastic frame;
6) mounting a driving element and a corresponding first pin in the first region of the circuit wiring layer, and mounting a power element and a corresponding second pin in the second region of the circuit wiring layer;
7) inject a certain amount of first thermal-insulated type resin material in the thermal-insulated type plastic frame to form first thermal-insulated sealing glue layer, first thermal-insulated sealing glue layer covers completely drive element, first thermal-insulated sealing glue layer covers part first pin, the upper surface on first thermal-insulated sealing glue layer with the top surface of thermal-insulated type plastic frame flushes, first thermal-insulated type resin material includes that epoxy AB glues and aluminium silicate powder, and epoxy AB glues and aluminium silicate powder's mass ratio is 15-25 within range.
8) Placing the metal substrate assembled with a driving element, a power element and pins in a first mold, wherein the lower surface and the side surface of the metal substrate are tightly attached to the first mold, injecting a certain amount of first heat-conducting resin material to form a first heat-conducting sealant layer, the first heat-conducting sealant layer completely covers the power element and the upper surface of the metal substrate, the first heat-conducting sealant layer covers a part of the first pins and the second pins, and the upper surface of the first heat-conducting sealant layer is flush with the top surface of the heat-insulating plastic frame and then taken out of the first mold, wherein the first heat-conducting resin material comprises the following components in percentage by weight: 20 parts of PET resin, 30 parts of PBT resin, 20 parts of PS resin, 5 parts of alumina powder, 4 parts of boron nitride powder, 6 parts of silicon nitride powder and 5 parts of silicon carbide powder;
9) removing part of the metal substrate, exposing part of the bottom surface of the heat insulation type plastic frame and the heat conduction silica gel layer to form a first blind hole below the first area, and then injecting a certain amount of second heat insulation type resin material to form a second heat insulation sealing glue layer, wherein the bottom surface of the second heat insulation sealing glue layer is flush with the lower surface of the metal substrate, and the second heat insulation type resin material comprises the following components in percentage by weight: 40 parts of ABS resin, 30 parts of PET resin, 25 parts of polycarbonate, 10 parts of PMMA resin, 10 parts of glass fiber, 5 parts of aluminum silicate powder, 6 parts of expanded perlite powder and 3 parts of magnesium silicate powder;
10) removing part of the first heat conduction sealing adhesive layer to form a second blind hole above the power element, and then tightly embedding a heat dissipation block into the second blind hole, so that the thickness of the heat conduction sealing adhesive layer between the bottom surface of the heat dissipation block and the top surface of the power element is 100 micrometers, the upper end of the heat dissipation block is exposed out of the first heat conduction sealing adhesive layer, and the heat dissipation block is made of copper;
11) then, placing the heat dissipation block in a second mold, wherein the upper surface of the heat dissipation block is tightly attached to the second mold, and injecting a certain amount of second heat-conducting resin material to form a second heat-conducting sealant layer, the second heat-conducting sealant layer is filled with the first annular concave hole, and the second heat-conducting sealant layer completely covers the lower surface and the side surface of the metal substrate, the bottom surface of the second heat-insulating sealant layer, the upper surface and the side surface of the first heat-conducting sealant layer, the upper surface of the first heat-insulating sealant layer and the side surface of the heat dissipation block, wherein the second heat-conducting resin material comprises the following components in percentage by weight: 40 parts of PET resin, 30 parts of PBT resin, 10 parts of PS resin, 3 parts of alumina powder, 1 part of boron nitride powder and 1 part of silicon carbide powder.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A preparation method of a power device packaging structure is characterized by comprising the following steps: the method comprises the following steps:
1) providing a metal substrate, and forming a first annular concave hole at the peripheral edge of the lower surface of the metal substrate;
2) bonding a heat-conducting silica gel layer on the upper surface of the metal substrate;
3) depositing an insulating material on the heat-conducting silica gel layer to form an insulating layer;
4) forming a circuit wiring layer on the insulating layer;
5) removing part of the insulating layer and the heat-conducting silica gel layer on the metal substrate to form a second annular concave hole, wherein the second annular concave hole exposes the upper surface of the metal substrate, a heat-insulating plastic frame is embedded into the second annular concave hole, and the circuit wiring layer is divided into a first area and a second area, wherein the area inside the heat-insulating plastic frame is the first area, and the area outside the heat-insulating plastic frame is the second area;
6) mounting a driving element and a corresponding first pin in the first region of the circuit wiring layer, and mounting a power element and a corresponding second pin in the second region of the circuit wiring layer;
7) injecting a certain amount of first heat-insulating resin material into the heat-insulating plastic frame to form a first heat-insulating sealing adhesive layer, wherein the first heat-insulating sealing adhesive layer completely covers the driving element, the first heat-insulating sealing adhesive layer covers a part of the first pins, and the upper surface of the first heat-insulating sealing adhesive layer is flush with the top surface of the heat-insulating plastic frame;
8) placing the metal substrate assembled with the driving element, the power element and the pins in a first mold, wherein the lower surface and the side surface of the metal substrate are tightly attached to the first mold, injecting a certain amount of first heat-conducting resin material to form a first heat-conducting sealing adhesive layer, the first heat-conducting sealing adhesive layer completely covers the power element and the upper surface of the metal substrate, the first heat-conducting sealing adhesive layer covers a part of the first pins and the second pins, and the upper surface of the first heat-conducting sealing adhesive layer is flush with the top surface of the heat-insulating plastic frame and then taken out of the first mold;
9) removing part of the metal substrate, exposing part of the bottom surface of the heat insulation type plastic frame and the heat conduction silica gel layer to form a first blind hole below the first area, and then injecting a certain amount of second heat insulation type resin material to form a second heat insulation sealing glue layer, wherein the bottom surface of the second heat insulation sealing glue layer is flush with the lower surface of the metal substrate;
10) removing part of the first heat conduction sealing adhesive layer to form a second blind hole above the power element, and then tightly embedding the heat dissipation block into the second blind hole, so that the thickness of the heat conduction sealing adhesive layer between the bottom surface of the heat dissipation block and the top surface of the power element is 100-200 microns, and the upper end of the heat dissipation block is exposed out of the first heat conduction sealing adhesive layer;
11) then arrange in the second mould in, the upper surface of radiating block with the second mould closely laminates, pours into a certain amount of second heat conduction type resin material into to form second heat conduction sealant layer, second heat conduction sealant layer is full of first annular shrinkage pool, just second heat conduction sealant layer covers completely the metal substrate's lower surface and side surface the bottom surface of second heat insulation sealant layer the upper surface and the side surface of first heat conduction sealant layer the upper surface of first heat insulation sealant layer with the side surface of radiating block.
2. The method for manufacturing the power device package structure according to claim 1, wherein: in the step 1), the metal substrate is made of one of aluminum, copper and stainless steel, the first annular concave hole is formed through wet etching or dry etching, and the depth of the first annular concave hole is 0.5-1 mm.
3. The method for manufacturing the power device package structure according to claim 1, wherein: in the step 3), silicon nitride, boron nitride or silicon carbide is deposited by a PECVD method to form the insulating layer, or aluminum oxide is deposited by an ALD method to form the insulating layer, and the insulating layer has a thickness of 80 to 150 μm.
4. The method for manufacturing the power device package structure according to claim 1, wherein: the step 4) of forming a circuit wiring layer on the insulating layer includes the following specific steps: and bonding a copper foil on the insulating layer, and removing part of the copper foil through an etching process to form the circuit wiring layer.
5. The method for manufacturing the power device package structure according to claim 1, wherein: in the step 5), the material of the heat insulation type plastic frame comprises the following components in percentage by weight: 20-40 parts of ABS resin, 30-40 parts of PET resin, 15-25 parts of polycarbonate, 5-10 parts of PMMA resin, 5-10 parts of glass fiber, 4-8 parts of aluminum silicate powder, 3-6 parts of expanded perlite powder and 3-5 parts of magnesium silicate powder; be provided with the first shrinkage pool that supplies the metal wire to pass on the first side of thermal-insulated type plastics frame, in the thermal-insulated type plastics frame with be provided with the confession on the second side that first side is relative second shrinkage pool that first pin passed.
6. The method for manufacturing the power device package structure according to claim 1, wherein: in the step 7), the first heat-insulating resin material includes an epoxy resin AB glue and aluminum silicate powder.
7. The method for manufacturing the power device package structure according to claim 1, wherein: in the step 8), the first thermal conductive resin material comprises the following components in percentage by weight: 20-40 parts of PET resin, 20-30 parts of PBT resin, 10-20 parts of PS resin, 5-8 parts of alumina powder, 4-6 parts of boron nitride powder, 3-6 parts of silicon nitride powder and 4-6 parts of silicon carbide powder; in the step 9, the second heat-insulating resin material comprises the following components in percentage by weight: 20-40 parts of ABS resin, 30-40 parts of PET resin, 15-25 parts of polycarbonate, 5-10 parts of PMMA resin, 5-10 parts of glass fiber, 4-8 parts of aluminum silicate powder, 3-6 parts of expanded perlite powder and 3-5 parts of magnesium silicate powder.
8. The method for manufacturing the power device package structure according to claim 1, wherein:
in the step 10), the material of the heat dissipation block is one of graphite, copper and aluminum;
in the step 11), the second heat-conductive resin material comprises the following components in percentage by weight: 20-40 parts of PET resin, 20-30 parts of PBT resin, 10-20 parts of PS resin, 1-3 parts of alumina powder, 1-3 parts of boron nitride powder and 1-2 parts of silicon carbide powder.
9. A power device package structure prepared by the method of any one of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811133014.5A CN109390242B (en) | 2018-09-27 | 2018-09-27 | Power device packaging structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811133014.5A CN109390242B (en) | 2018-09-27 | 2018-09-27 | Power device packaging structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109390242A CN109390242A (en) | 2019-02-26 |
| CN109390242B true CN109390242B (en) | 2020-04-28 |
Family
ID=65418246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811133014.5A Active CN109390242B (en) | 2018-09-27 | 2018-09-27 | Power device packaging structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109390242B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111106017B (en) * | 2019-11-28 | 2021-06-18 | 郑君雄 | Power module and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010192653A (en) * | 2009-02-18 | 2010-09-02 | Panasonic Corp | Semiconductor device |
| KR101677322B1 (en) * | 2014-04-16 | 2016-11-17 | 주식회사 동부하이텍 | Semiconductor package and method of manufacturing the same |
| TWI584428B (en) * | 2016-06-08 | 2017-05-21 | 力成科技股份有限公司 | Heat-dissipating semiconductor package for lessening package warpage |
| US10068831B2 (en) * | 2016-12-09 | 2018-09-04 | Qorvo Us, Inc. | Thermally enhanced semiconductor package and process for making the same |
| US10079194B1 (en) * | 2017-03-07 | 2018-09-18 | Novatek Microelectronics Corp. | Chip on film package |
-
2018
- 2018-09-27 CN CN201811133014.5A patent/CN109390242B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109390242A (en) | 2019-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109300795B (en) | Semiconductor power device package and preparation method thereof | |
| US20180263146A1 (en) | Method of making thermally enhanced wiring board having isolator incorporated therein | |
| WO2010115296A1 (en) | Radiation substrate for power led and power led production and manufacturing method thereof | |
| CN106298695B (en) | Encapsulation module, encapsulation module stacked structure and preparation method thereof | |
| CN105161598B (en) | A kind of CSP encapsulating structure and manufacturing process based on moulding | |
| TWI440228B (en) | Light emitting diode package structure and manufacturing method thereof | |
| US8896015B2 (en) | LED package and method of making the same | |
| WO2014117495A1 (en) | Chip packaging structure and chip packaging method | |
| JP5121353B2 (en) | Overmolded MCMIC package and manufacturing method thereof | |
| TWI611541B (en) | Method of making wiring board having electrical isolator and moisture inhibiting cap incorporated therein and semiconductor assembly thereof | |
| CN108231714A (en) | A kind of power module and preparation method thereof | |
| CN103187409A (en) | Light-emitting diode (LED) array packaging light source module based on lead frame | |
| US20150382444A1 (en) | Thermally enhanced wiring board having metal slug and moisture inhibiting cap incorporated therein and method of making the same | |
| US20150382468A1 (en) | Wiring board having electrical isolator and moisture inhibiting cap incorporated therein and method of making the same | |
| TWI455366B (en) | Manufacturing method of led package | |
| CN109390242B (en) | Power device packaging structure and preparation method thereof | |
| TW201242095A (en) | LED package and method for manufacturing the same | |
| CN109801902B (en) | Packaging substrate, semiconductor device and manufacturing method thereof | |
| CN202434513U (en) | LED (light emitting diode) array packaging light source module based on lead frame | |
| CN111276455B (en) | Power module and preparation method thereof | |
| CN109326527B (en) | Power element packaging module and preparation method thereof | |
| US20160211207A1 (en) | Semiconductor assembly having wiring board with electrical isolator and moisture inhibiting cap incorporated therein and method of making wiring board | |
| JP4458260B2 (en) | Hollow package manufacturing method and semiconductor package manufacturing method | |
| CN108847409B (en) | Intelligent power module and preparation method thereof | |
| JP2008181922A (en) | Heat-conductive substrate and manufacturing method thereof, and semiconductor device using heat-conductive substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200402 Address after: 264200 no.16-1, Hainan Road, Weihai export processing zone, Weihai City, Shandong Province Applicant after: RIYUEGUANG SEMICONDUCTOR(WEIHAI) Co.,Ltd. Address before: Kolding road high tech Zone of Suzhou City, Jiangsu province 215000 No. 78 Building No. 5 Room 101 Applicant before: SUZHOU QIANZHENG TECHNOLOGY CONSULTING Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 264205 No. 16-1, Hainan Road, North District, comprehensive bonded zone, Weihai Economic and Technological Development Zone, Shandong Province Patentee after: Riyuexin semiconductor (Weihai) Co.,Ltd. Address before: 264200 No. 16-1, Hainan Road, Weihai export processing zone, Weihai City, Shandong Province Patentee before: RIYUEGUANG SEMICONDUCTOR(WEIHAI) Co.,Ltd. |
|
| CP03 | Change of name, title or address |