CN109385610A - The mobile phone plated film made with high entropy liquid alloy target - Google Patents

The mobile phone plated film made with high entropy liquid alloy target Download PDF

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Publication number
CN109385610A
CN109385610A CN201710666237.7A CN201710666237A CN109385610A CN 109385610 A CN109385610 A CN 109385610A CN 201710666237 A CN201710666237 A CN 201710666237A CN 109385610 A CN109385610 A CN 109385610A
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Prior art keywords
mobile phone
plated film
target
alloy
nonmetalloid
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陈冠维
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State Gold Material Polytron Technologies Inc
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State Gold Material Polytron Technologies Inc
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Priority to CN201710666237.7A priority Critical patent/CN109385610A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3428—Cathode assembly for sputtering apparatus, e.g. Target using liquid targets

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses one kind with high entropy liquid alloy (High Entropy Liquid Metal Alloy) target sputter on mobile phone to be fabricated to mobile phone plated film, with high rigidity, extremely strong anticorrosive and oxidation resistance, and there is good adhesive force with its ground, and possess the plating rate of superelevation, high production capacity and high yield.

Description

The mobile phone plated film made with high entropy liquid alloy target
Technical field
The present invention relates to a kind of mobile phone plated film, refer in particular to a kind of plate with high entropy liquid alloy target on mobile phone Mobile phone plated film.
Background technique
The problem of metallic diaphragm plated film on existing mobile phone suffers from weatherability and scratch resistance.Generally emphasize that weatherability is good Mobile phone metal film then not scratch-resistant；And then weatherability is poor for the good metal film of scratch resistance, both weatherability and scratch resistance are not easy simultaneous ?.
Though being just that ceramic coating can have both weatherability and scratch resistance, plated film quality is uneven, and color difference is big, and plating rate is slow, good Rate is low, it is often necessary to which strip plates again, and manufacturing process is cumbersome, thus the manufacturing cost that increases, and unfavorable Market Competition, these are all The shortcomings that being existing mobile phone coating technique.
Summary of the invention
In order to solve the above-mentioned technical problem, present invention is primarily aimed at provide one kind to have both weatherability, scratch resistance And plated film quality is uniform, plating rate is high, the high mobile phone plated film of yield.
Mobile phone plated film provided by the invention, with the target of high entropy liquid alloy, in a manner of sputter, by high entropy liquid alloy Target sputter is on the ground or substrate of mobile phone, mobile phone plated film is made；The wherein alloy ratio of the high entropy liquid alloy target Using lower example general formula, enable metallic element mixed with nonmetalloid: the metallic element includes: AlaCobCrcCudFeeMnfMogNihTiiWjAgkAulGamSnnZnoZrp；The nonmetalloid includes: BqCrPsSit, wherein each original Sub- percentage is respectively between following ranges:
Al (aluminium): a=1 ~ 50%；Co (cobalt): b=0 ~ 50%；Cr (chromium): c=0 ~ 50%；Cu (copper): d=0 ~ 70%；Fe (iron): e =0 ~ 50%；Mn (manganese): f=1 ~ 35%；Mo (molybdenum): g=0 ~ 35%；Ni (nickel): h=0 ~ 50%；Ti (titanium): i=0 ~ 50%； W (tungsten): j=1 ~ 35%；Ag (silver): k=0 ~ 20%；Au (gold): l=0 ~ 30%；Ga (gallium): m=0 ~ 10%；Sn (tin): n=0 ~ 10%；Zn (zinc): o=0 ~ 20%；Zr (zirconium): p=0 ~ 50%；B (boron): q=0 ~ 20%；C (carbon): r=0 ~ 20%；P (phosphorus): s= 0~20%；Si (silicon): t=0 ~ 20%；In above formula, at least five kinds of or Determination of multiple metal elements is selected, for high-entropy alloy；And it selects more Kind liquid alloy element, is mixed so that the high entropy liquid alloy target is made.
As a wherein specific embodiment, the metallic element and nonmetalloid include following formula: CrcFeeMogNihCrBqSit, wherein the atomic percent of c, e, g, h, r, q and t are respectively as follows: c=15 ~ 50%；E=20 ~ 50%；g =10 ~ 30%；H=0 ~ 50%；R=5 ~ 20%；Q=4 ~ 20%；T=1 ~ 10%.
As a wherein specific embodiment, the metallic element and nonmetalloid include following formula: CobCrcFeeMogNihTiiWjCrBqSit, wherein the atomic percent of b, c, e, g, h, i, j, r, q and t be respectively as follows: b=5 ~ 30%；C=10 ~ 35%；E=10 ~ 35%；G=0 ~ 30%；H=10 ~ 35%；I=5 ~ 35%；J=0 ~ 30%；R=0 ~ 20%；Q=0 ~ 20%；T=1 ~ 10%.
As a wherein specific embodiment, the metallic element and nonmetalloid include following formula: CrcFeeMogNihCrPsBq, wherein the atomic percent of ︳ c, e, g, h, r, s and q are respectively as follows: c=5 ~ 30%；E=10 ~ 30%；g =5 ~ 20%；H=10 ~ 50%；R=3 ~ 15%；S=5 ~ 20%；Q=3 ~ 10%.
As a wherein specific embodiment, the metallic element and nonmetalloid include following formula: AgkAlaAulCudGamNihSnnTiiZnoZrpCrBqSit, wherein the atomic percent of k, a, l, d, m, h, n, i, o, p, r, q and t Than being respectively as follows: k=1 ~ 15%；A=0 ~ 15%；L=0 ~ 30%；D=30 ~ 70%；M=0 ~ 10%；H=1 ~ 15%；N=0 ~ 10%；I=1 ~35%；O=0 ~ 15%；P=5 ~ 50%；R=0 ~ 10%；Q=0 ~ 10%；T=0 ~ 10%.
As optimal technical scheme, which is manufactured according to laxative remedy: after the element material of special ratios is prepared, being used Smelting furnace melting is mixed into melt, then casts to preprepared mold, up to master alloy after being cooled to, then according to various rule The target for meeting different sputtering equipments is made in lattice dimensioned.
As optimal technical scheme, which is manufactured according to laxative remedy: each element is first using the method for refinement or meltallizing Be made raw material powder, then according to special ratios by powder after evenly mixing, powder will be mixed and be placed in preprepared mold, used Hot-forming or sintering processing is fabricated directly into the target for meeting different sputtering equipments.
As optimal technical scheme, which is to borrow magnetic control sputtering plating, under electric field and magnetic field, by target sputter to mobile phone bottom On material or substrate, mobile phone plated film is made.
As optimal technical scheme, the ground of the mobile phone plated film is ceramics, glass, metal or alloy, plastic cement, staple fibre Or composite wood.
In order to achieve the above object, the present invention provides one kind with high entropy liquid alloy (High Entropy Liquid Metal Alloy) when to make mobile phone plated film, it can gather high rigidity, high intensity, highly resistance corrosion, high-weatherability to target, with And a variety of advantages of high plating rate and high yield.
Detailed description of the invention
Fig. 1 is the operation chart that the present invention utilizes magnetic control sputtering plating.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings and specific examples, so that those skilled in the art can be with It better understands the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
Implementation of the invention preferably first makes high entropy liquid alloy (High Entropy Liquid Metal Alloy, abbreviation HELMA target), then again in a manner of sputter (Sputtering), such as with magnetic control sputtering plating (Magnetron Sputtering mode), by HELMA target sputter on the ground (Substrate) of mobile phone under electric field and magnetic field, with system At mobile phone plated film.
Following formula, which can be used, in alloy ratio about HELMA target enables metallic element mixed with nonmetalloid, wherein a, b ... .t the atomic percent (Atomic %) of each element in component alloy is indicated.
The general formula of alloy ratio: metallic element (AlaCobCrcCudFeeMnfMogNihTiiWjAgkAulGamSnnZnoZrp)+ Nonmetalloid (BqCrPsSit), in which:
Al (aluminium): a=1 ~ 50%；Co (cobalt): b=0 ~ 50%；Cr (chromium): c=0 ~ 50%；Cu (copper): d=0 ~ 70%；Fe (iron): e =0 ~ 50%；Mn (manganese): f=1 ~ 35%；Mo (molybdenum): g=0 ~ 35%；Ni (nickel): h=0 ~ 50%；Ti (titanium): i=0 ~ 50%； W (tungsten): j=1 ~ 35%；Ag (silver): k=0 ~ 20%；Au (gold): l=0 ~ 30%；Ga (gallium): m=0 ~ 10%；Sn (tin): n=0 ~ 10%；Zn (zinc): o=0 ~ 20%；Zr (zirconium): p=0 ~ 50%；B (boron): q=0 ~ 20%；C (carbon): r=0 ~ 20%；P (phosphorus): s= 0~20%；Si (silicon): t=0 ~ 20%.
And above formula is an extensive general formula, preferably from least five kinds of or multiple element is wherein selected, to constitute high-entropy alloy (High Entropy Alloy) its internal micro-assembly robot is mostly crystalline texture, wherein the atomic percent of each element between 0% ~ 50%；And to be advisable between 5% ~ 35%.And the element of a variety of liquid alloys (Liquid Metal Alloy) is selected in self-ascending type, The inside micro-assembly robot of the liquid alloy is amorphous structure (Amorphous).
According to the present invention, 5 kinds or more of element is enabled to constitute high-entropy alloy (High Entropy Alloy, HEA), can had good Anti- crawl intensity (creep strength), good anti-oxidant corrosion resistance is wear-resisting, and hardness is high, has good thermally safe Property and chemical stability.Already there is good characteristic, but high-entropy alloy is mainly crystalline texture its resistance elastic deformation The property of (elastic deformation) is still inferior to amorphous structure (Amorphous), therefore the present invention removes high-entropy alloy (HEA) outside, it is still necessary to help with liquid alloy (Liquid Metal Alloy, LMA), to assign its more noncrystalline characteristic, this in It is particularly important when elementary composition ratio (such as atomic percent) in allotment or design alloy.
, can be according to atomic radius size in alloy composition Proportionality design, such as large, medium and small type atom adding is matched with mixing, and makes it Atomic radius difference, to obtain higher bulk density (packing density), reduces its free volume 12% or more (free volume), and there is negative heat to generate when mixing various element, to prolong resistance crystallization nucleation, and assign product more amorphous Matter characteristic, this because noncrystalline characteristic can more improve its toughness, and is reduced brittle in outside the scratch resistance of finished product and corrosion protection weathering characteristics Property, this in current mobile phone have flexible (flexible), can folding endurance (foldable) market or popular tendency under, more aobvious weight It wants.
It is as shown below to belong to preferred embodiment for the representative alloy material ratio of the present invention, but the present invention is not from limit In this, it can be adjusted according to required, mix and match, to make optimum product.
From metallic element (AlaCobCrcCudFeeMnfMogNihTiiWjAgkAulGamSnnZnoZrp) and nonmetalloid (BqCrPsSit) in the ratio of chosen material be combined, such as:
1. Cr of embodimentcFeeMogNihCrBqSit
The atom % (atomic%) of wherein c, e, g, h, r, q and t are respectively as follows:
C=15 ~ 50%；E=20 ~ 50%；G=10 ~ 30%；H=0 ~ 50%；R=5 ~ 20%；Q=4 ~ 20%；
T=1 ~ 10%.
2. Co of embodimentbCrcFeeMogNihTiiWjCrBqSit
The atom % (atomic%) of wherein b, c, e, g, h, i, j, r, q and t are respectively as follows:
B=5 ~ 30%；C=10 ~ 35%；E=10 ~ 35%；G=0 ~ 30%；H=10 ~ 35%；I=5 ~ 35%；
J=0 ~ 30%；R=0 ~ 20%；Q=0 ~ 20%；T=1 ~ 10%.
3. Cr of embodimentcFeeMogNihCrPsBq
The atom % (atomic%) of wherein c, e, g, h, r, s and q are respectively as follows:
C=5 ~ 30%；E=10 ~ 30%；G=5 ~ 20%；H=10 ~ 50%；R=3 ~ 15%；S=5 ~ 20%；
Q=3 ~ 10%.
4. Ag of embodimentkAlaAulCudGamNihSnnTiiZnoZrpCrBqSit
The atom % (atomic%) of wherein k, a, l, d, m, h, n, i, o, p, r, q and t are respectively as follows:
K=1 ~ 15%；A=0 ~ 15%；L=0 ~ 30%；D=30 ~ 70%；M=0 ~ 10%；H=1 ~ 15%；
N=0 ~ 10%；I=1 ~ 35%；O=0 ~ 15%；P=5 ~ 50%；R=0 ~ 10%；Q=0 ~ 10%；
T=0 ~ 10%.
[note: embodiment 4 is non-ferrous alloy.]
After being made into the material composition of each target according to the ratio of the various embodiments described above, that is, production target is given, production method has two, packet It includes:
1. after the element material of special ratios is prepared, being mixed into melt using smelting furnace melting, then cast to preprepared In mold, up to master alloy after being cooled to, then the target for meeting different sputtering equipments is made according to various specifications dimensioned.
2. raw material powder is first made using the method for refinement or meltallizing in each element, then powder is uniformly mixed according to special ratios After conjunction, powder will be mixed and be placed in preprepared mold, be fabricated directly into hot-forming or sintering processing and meet difference The target of sputtering equipment.
There are three types of made target patterns, it may be assumed that flat target (plate), rotary target (tubular type) and electric arc target (cylinder Type).
Above-mentioned master alloy is after being fabricated to target, and due to the slow relationship of cooling velocity, the interior tissue of target is in (crystalline) shape is crystallized, however carry out sputter (being detailed later), alloy target material becomes alloy gas by plasma-based bombardment out Body is at this time amorphous state, is then deposited into surface of bottom material and forms plated film, switchs to solid-state by gaseous state at this time, since gaseous state switchs to admittedly The time of state is extremely of short duration, is equal to and is cooled and solidified with very high cooling velocity, therefore Yi Yinlai inside Coating Materials Not as good as crystallization, wink forms amorphous structure (amorphous).In addition, being exactly in alloy composition Proportionality design as foregoing When, i.e., it is designed according to atomic radius size pre-add, makes the raw negative element heat of mixing (element is totally mixed into heat release), becoming plating It can be easier that material internal is made to form amorphous structure when film, further strengthen its excellent characteristics.
The present invention can be made into the plated film of various mobile phones, comprising: mobile lens plated film；Mobile phone sample trademark pattern plated film；Mobile phone text Word plated film；Cell phone back cover plated film；The plating of mobile phone frame film；And plated film needed for other handset configurations.
Ground (or substrate) applicatory then includes: ceramic surface；Glass surface；Metal or alloy surface；Plastic surface； Staple fibre surface；And composite wood surface.
The target is placed at the target (Target) of a sputtering unit, and the mobile phone ground is placed in the sputtering unit At substrate (substrate), to carry out the sputter operation of mobile phone plated film.
The present invention described below applies the coating apparatus of a magnetic control sputtering plating (Magnetron Sputtering).
Refering to fig. 1, anode for sputter coating 1 used in the present invention includes a vacuum chamber 11, and lower section is placed in the target 2 and passes to Cathode, top are then placed in mobile phone substrate 3 to be coated, pass to anode, in vacuum chamber 11, vacuumize, and inject inert gas, such as argon Gas (Argon), target 2 is underlying to wrap the pole S with magnet 4, including two poles N, and helping can be with refrigerants such as cold water to cool down equipment 5 The cooling target pedestal and related facility, for safeguard protection.
The ionization of ar atmo 12 is formed plasma-based 13, argon ion by the voltage of positive and negative two interpolar (that is, between target and substrate) Change forms positively charged argon ion (Ar+) 14 with electronics 15, visit the gift of 4 magnetic field magnetic line 41 of magnet, make electronics 15 around magnetic force Line 41 circles round and is accelerated, high velocity impact ar atmo, and more sharp raw argon ion 14, positively charged argon ion is drawn to negatively charged immediately Target 2, hit target 2 to burst out sputter particle 21, and then form plated film on sputter to substrate 3, be for mobile phone plated film.
Due to magnetic line of force magnetic field it is therefore, electronics 15 is leveling off to 2 one band of target, and be attracted at substrate 3 less, makes generation one Stable plasma-based 13, and be bordering at target 2, the successful plated film of sputter will not be not only undermined, and farther out because of electronics 15 " route ", The magnetic that more has an opportunity hits ar atmo 12, generates more argon ions 14, and argon ion 14 collides target 2 and bursts out more sputter particles 21, therefore, sputter improved efficiency, plating rate improves, and yield also improves, this is that the present invention uses the excellent of magnetic control sputtering plating Place.
Manufactured mobile phone plated film tests its hardness [respectively with Hf(GPa) and Hf(Hv) indicate] and springform (being) number [with Ef(GPa) it indicates, result such as following table, table 1 (thickness and hardness), table 2 (thickness and modulus of elasticity):
Table 1:
Thickness (nm) Hardness Hf(GPa) Hardness Hf(Hv)
5 22.58 2134
8 22.05 2084
12.5 22.85 2159
25 25.34 2395
50 24.65 2329
1500 34.83 3291
2200 35.13 3320
5000 34.56 3266
10000 28.43 2687
Table 2:
Thickness (nm) Modulus of elasticity Ef(GPa)
5 172.2
8 201.1
12.5 209.8
25 238.1
50 271.2
1500 368.1
2200 392.8
5000 410.3
10000 217.5
And existing mobile phone silica plated film, when thickness 2000nm, hardness Hf=7GPa, far below in the upper table 1 of the present invention H when with a thickness of 2200nmf=35.13GPa；And silica film thickness be 2000nm when, modulus of elasticity Ef=70GPa is also remote low E when in table 2 of the present invention with a thickness of 2200nmf=392.8 GPa.
Thus show that mobile phone plated film made by the present invention has high hardness and modulus of elasticity.
Manufactured mobile phone plated film is simultaneously acidproof to test its with strong acid (include: 36% salt is sour, 63% nitric acid and 98% sulfuric acid) drop leaching Corrosion resistance, inspected its result and have no acid corrosion phenomenon, sequitur mobile phone plated film of the present invention has antiacid anticorrosion properties.
It is uniformly beautiful that mobile phone plated film of the present invention by external inspection can find coupler surface, without color difference, and by mobile phone board Bending also has no the generation in removing, fragmentation or crack, reflects that the present invention has superfine mechanical, Wuli-Shili-Renli system approach.
Mobile phone plated film of the present invention combines the advantages of high-entropy alloy (HEA) and liquid conjunction (LMA), collects its great achievement, has height Hardness, high intensity, elastic modulus, high antacid corrosion resistance, high rustless property, and the good no color differnece of coupler surface, plating rate are high, good Rate is high, can promote production capacity, reduces production cost, and is much better than existing mobile phone plated film.
Embodiment described above is only to absolutely prove preferred embodiment that is of the invention and being lifted, protection model of the invention It encloses without being limited thereto.Those skilled in the art's made equivalent substitute or transformation on the basis of the present invention, in the present invention Protection scope within.Protection scope of the present invention is subject to claims.

Claims (9)

1. a kind of mobile phone plated film, which is characterized in that with the target of high entropy liquid alloy, in a manner of sputter, high entropy liquid is closed Gold target material sputter is on the ground or substrate of mobile phone, mobile phone plated film is made；The wherein alloy ratio of the high entropy liquid alloy target Example uses lower example general formula, and enable metallic element mixed with nonmetalloid: the metallic element includes: AlaCobCrcCudFeeMnfMogNihTiiWjAgkAulGamSnnZnoZrp；The nonmetalloid includes: BqCrPsSit, wherein each original Sub- percentage is respectively between following ranges:
Al:a=1 ~ 50%；Co:b=0 ~ 50%；Cr:c=0 ~ 50%；Cu:d=0 ~ 70%；Fe:e=0 ~ 50%；Mn:f=1 ~ 35%； Mo:g=0 ~ 35%；Ni:h=0 ~ 50%；Ti:i=0 ~ 50%；W:j=1 ~ 35%；Ag:k=0 ~ 20%；Au:l=0 ~ 30%；Ga:m =0 ~ 10%；Sn:n=0 ~ 10%；Zn:o=0 ~ 20%；Zr:p=0 ~ 50%；B:q=0 ~ 20%；C:r=0 ~ 20%；P:s=0 ~ 20%；Si:t=0 ~ 20%；In above formula, at least five kinds of or Determination of multiple metal elements is selected, for high-entropy alloy；And select a variety of liquid Alloying element is mixed so that the high entropy liquid alloy target is made.
2. mobile phone plated film as claimed in claim 1, which is characterized in that the metallic element and nonmetalloid include following formula: CrcFeeMogNihCrBqSit, wherein the atomic percent of c, e, g, h, r, q and t are respectively as follows: c=15 ~ 50%；E=20 ~ 50%；g =10 ~ 30%；H=0 ~ 50%；R=5 ~ 20%；Q=4 ~ 20%；T=1 ~ 10%.
3. mobile phone plated film as claimed in claim 1, which is characterized in that the metallic element and nonmetalloid include following formula: CobCrcFeeMogNihTiiWjCrBqSit, wherein the atomic percent of b, c, e, g, h, i, j, r, q and t be respectively as follows: b=5 ~ 30%；C=10 ~ 35%；E=10 ~ 35%；G=0 ~ 30%；H=10 ~ 35%；I=5 ~ 35%；J=0 ~ 30%；R=0 ~ 20%；Q=0 ~ 20%；T=1 ~ 10%.
4. mobile phone plated film as claimed in claim 1, which is characterized in that the metallic element and nonmetalloid include following formula: CrcFeeMogNihCrPsBq, wherein the atomic percent of ︳ c, e, g, h, r, s and q are respectively as follows: c=5 ~ 30%；E=10 ~ 30%；g =5 ~ 20%；H=10 ~ 50%；R=3 ~ 15%；S=5 ~ 20%；Q=3 ~ 10%.
5. mobile phone plated film as claimed in claim 1, which is characterized in that the metallic element and nonmetalloid include following formula: AgkAlaAulCudGamNihSnnTiiZnoZrpCrBqSit, wherein the atomic percent of k, a, l, d, m, h, n, i, o, p, r, q and t Than being respectively as follows: k=1 ~ 15%；A=0 ~ 15%；L=0 ~ 30%；D=30 ~ 70%；M=0 ~ 10%；H=1 ~ 15%；N=0 ~ 10%；I=1 ~35%；O=0 ~ 15%；P=5 ~ 50%；R=0 ~ 10%；Q=0 ~ 10%；T=0 ~ 10%.
6. mobile phone plated film as claimed in claim 1, which is characterized in that the target is manufactured according to laxative remedy: by the element of special ratios After material prepares, it is mixed into melt using smelting furnace melting, then cast to preprepared mold, up to female after being cooled to Alloy, then the target for meeting different sputtering equipments is made according to various specifications dimensioned.
7. mobile phone plated film as claimed in claim 1, which is characterized in that the target is manufactured according to laxative remedy: each element is utilized refinement Or the method for meltallizing is first made raw material powder, then according to special ratios by powder after evenly mixing, it is quasi- in advance that powder merging will be mixed In the mold got ready, the target for meeting different sputtering equipments is fabricated directly into hot-forming or sintering processing.
8. mobile phone plated film as claimed in claim 1, which is characterized in that the target is to borrow magnetic control sputtering plating, under electric field and magnetic field, by target On material sputter to mobile phone ground or substrate, mobile phone plated film is made.
9. mobile phone plated film as claimed in claim 1, which is characterized in that the ground of the mobile phone plated film is ceramics, glass, metal or conjunction Gold, plastic cement, staple fibre or composite wood.
CN201710666237.7A 2017-08-07 2017-08-07 The mobile phone plated film made with high entropy liquid alloy target Pending CN109385610A (en)

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Cited By (6)

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CN111733358A (en) * 2020-06-09 2020-10-02 三峡大学 High-strength high-toughness corrosion-resistant cobalt-free high-entropy alloy and preparation method thereof
WO2021062485A1 (en) * 2019-10-03 2021-04-08 Advanced Alloy Holdings Pty Ltd Copper alloys
CN113122765A (en) * 2021-03-24 2021-07-16 武汉科技大学 Quinary polymeric element nanoparticle with strong stable light amplitude limit and preparation method thereof
CN113528985A (en) * 2021-07-30 2021-10-22 西安工业大学 Microalloyed brittle corrosion-resistant high-entropy amorphous alloy and preparation method thereof
CN113774345A (en) * 2021-09-01 2021-12-10 江苏星浪光学仪器有限公司 Magnetron sputtering-based composite board mobile phone rear cover printing and film plating method
WO2022160471A1 (en) * 2021-02-01 2022-08-04 浙江大学 High-thermal-conductivity two-dimensional high-entropy metal oxide assembly and preparation method therefor

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TW200619405A (en) * 2004-12-07 2006-06-16 Univ Nat Tsing Hua Method for producing a high-entropy alloy film

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Publication number Priority date Publication date Assignee Title
WO2021062485A1 (en) * 2019-10-03 2021-04-08 Advanced Alloy Holdings Pty Ltd Copper alloys
CN111733358A (en) * 2020-06-09 2020-10-02 三峡大学 High-strength high-toughness corrosion-resistant cobalt-free high-entropy alloy and preparation method thereof
CN111733358B (en) * 2020-06-09 2022-02-01 三峡大学 High-strength high-toughness corrosion-resistant cobalt-free high-entropy alloy and preparation method thereof
WO2022160471A1 (en) * 2021-02-01 2022-08-04 浙江大学 High-thermal-conductivity two-dimensional high-entropy metal oxide assembly and preparation method therefor
CN113122765A (en) * 2021-03-24 2021-07-16 武汉科技大学 Quinary polymeric element nanoparticle with strong stable light amplitude limit and preparation method thereof
CN113122765B (en) * 2021-03-24 2022-04-15 武汉科技大学 Quinary polymeric element nanoparticle with strong stable light amplitude limit and preparation method thereof
CN113528985A (en) * 2021-07-30 2021-10-22 西安工业大学 Microalloyed brittle corrosion-resistant high-entropy amorphous alloy and preparation method thereof
CN113528985B (en) * 2021-07-30 2022-05-24 西安工业大学 Microalloyed brittle corrosion-resistant high-entropy amorphous alloy and preparation method thereof
CN113774345A (en) * 2021-09-01 2021-12-10 江苏星浪光学仪器有限公司 Magnetron sputtering-based composite board mobile phone rear cover printing and film plating method

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