CN109382333B - Chip selection method of LED epitaxial wafer - Google Patents

Chip selection method of LED epitaxial wafer Download PDF

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CN109382333B
CN109382333B CN201811306910.7A CN201811306910A CN109382333B CN 109382333 B CN109382333 B CN 109382333B CN 201811306910 A CN201811306910 A CN 201811306910A CN 109382333 B CN109382333 B CN 109382333B
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wavelength
epitaxial wafer
led
led epitaxial
led chip
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CN109382333A (en
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李镇勇
艾国栋
刘岩
刘建鋆
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Xiamen Changelight Co Ltd
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Xiamen Changelight Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract

The invention provides a chip selection method of an LED epitaxial wafer, which comprises the following steps: obtaining a wavelength k value according to the current density of the LED epitaxial wafer and the current density of the required LED chip; obtaining a required wavelength range of the LED epitaxial wafer according to the wavelength k value and the required wavelength range of the LED chip; and selecting an LED epitaxial wafer meeting a corresponding wavelength range from the plurality of LED epitaxial wafers according to different wavelength standard deviations, wherein the corresponding wavelength range is smaller than or equal to the required wavelength range of the LED epitaxial wafer. And after the selected LED epitaxial wafer is manufactured into an LED chip, the LED chip with high demand coincidence rate and high product output concentration can be obtained.

Description

Chip selection method of LED epitaxial wafer
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a method for selecting an LED epitaxial wafer.
Background
In the prior art, in the process of manufacturing an LED chip, some LED epitaxial wafers are selected to manufacture a finished LED chip, the wavelength of light emitted by the finished LED chip is measured, and the wavelength is subtracted from the wavelength of the LED epitaxial wafer directly measured to obtain a wavelength k value, i.e., a wavelength fluctuation value. And then adding the wavelength of any LED epitaxial wafer and the wavelength k value to obtain a wavelength estimated value of an LED chip manufactured by the LED epitaxial wafer, judging whether the wavelength estimated value is in a normal wavelength range, if so, selecting the LED epitaxial wafer and manufacturing the LED chip, and if not, discarding the LED epitaxial wafer. However, the method of selecting the LED epitaxial wafer has a long cycle time, and cannot meet the requirements of actual production.
Disclosure of Invention
In view of this, the present invention provides a method for selecting an LED epitaxial wafer, so as to shorten a wafer selection period of the LED epitaxial wafer.
In order to achieve the purpose, the invention provides the following technical scheme:
a chip selection method of an LED epitaxial wafer comprises the following steps:
obtaining a wavelength k value according to the current density of the LED epitaxial wafer and the current density of the required LED chip;
obtaining a required wavelength range of the LED epitaxial wafer according to the wavelength k value and the required wavelength range of the LED chip;
and selecting an LED epitaxial wafer meeting a corresponding wavelength range from the plurality of LED epitaxial wafers according to different wavelength standard deviations, wherein the corresponding wavelength range is smaller than or equal to the required wavelength range of the LED epitaxial wafer.
Optionally, deriving the value of the wavelength k according to the current density of the LED epitaxial wafer and the current density of the required LED chip comprises:
obtaining the wavelength of the LED epitaxial wafer according to the current density of the LED epitaxial wafer and the corresponding relation between the current density and the wavelength;
obtaining the wavelength of the required LED chip according to the current density of the required LED chip and the corresponding relation between the current density and the wavelength;
and obtaining the wavelength k value according to the wavelength of the LED epitaxial wafer and the wavelength of the required LED chip.
Optionally, the correspondence between the current density and the wavelength is W ═ a × J3+b×J2+ c × J + d, where W is the wavelength, J is the current density, and a, b, c, d are constants.
Optionally, deriving the wavelength k value according to the wavelength of the LED epitaxial wafer and the wavelength of the required LED chip includes:
the wavelength k value is equal to the difference between the wavelength of the LED epitaxial wafer and the wavelength of the required LED chip.
Optionally, the current density of the required LED chip is equal to a ratio of the current of the required LED chip to a light emitting area of the required LED chip.
Optionally, the desired LED epitaxial wafer wavelength range is equal to the sum of the wavelength k value and the desired LED chip wavelength range.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
according to the LED epitaxial wafer selection method provided by the invention, the wavelength k value is obtained without manufacturing the LED epitaxial wafer into an LED chip, the wavelength k value can be calculated only according to the current density of the LED epitaxial wafer and the current density of the required LED chip, then the required wavelength range of the LED epitaxial wafer can be obtained according to the wavelength k value and the wavelength range of the required LED chip, the LED epitaxial wafer meeting the corresponding wavelength range is selected from the LED epitaxial wafers according to different wavelength standard differences, the corresponding wavelength range is smaller than or equal to the wavelength range of the required LED epitaxial wafer, and the LED chip with high demand coincidence rate and high product yield concentration rate can be obtained after the selected LED epitaxial wafer is manufactured into the LED chip.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a flowchart of a method for selecting an LED epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a graph illustrating a relationship between current density and wavelength according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, so that the above is the core idea of the present invention, and the above objects, features and advantages of the present invention can be more clearly understood. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a method for selecting an LED epitaxial wafer, which is used for selecting the LED epitaxial wafer capable of being manufactured into a required LED chip in the manufacturing process of the LED chip and improving the required coincidence rate of the LED chip, and as shown in figure 1, the method comprises the following steps:
s101: obtaining a wavelength k value according to the current density of the LED epitaxial wafer and the current density of the required LED chip;
s102: obtaining a required wavelength range of the LED epitaxial wafer according to the wavelength k value and the required wavelength range of the LED chip;
s103: and selecting an LED epitaxial wafer meeting a corresponding wavelength range from the plurality of LED epitaxial wafers according to different wavelength standard deviations, wherein the corresponding wavelength range is smaller than or equal to the required wavelength range of the LED epitaxial wafer.
The step of obtaining the wavelength k value according to the current density of the LED epitaxial wafer and the current density of the required LED chip comprises the following steps:
obtaining the wavelength of the LED epitaxial wafer according to the current density of the LED epitaxial wafer and the corresponding relation between the current density and the wavelength;
obtaining the wavelength of the required LED chip according to the current density of the required LED chip and the corresponding relation between the current density and the wavelength;
and obtaining a wavelength k value according to the wavelength of the LED epitaxial wafer and the wavelength of the required LED chip.
The LED epitaxial wafer in the embodiment of the present invention includes a substrate, and an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer sequentially located on the substrate surface, and the LED epitaxial wafer is not provided with an electrode and is not packaged, and thus is a semi-finished product of an LED chip. The LED chip in the embodiment of the present invention includes an LED epitaxial wafer, and a P electrode, an N electrode, and the like located on the LED epitaxial wafer, that is, the LED chip in the embodiment of the present invention is a finished LED chip.
In the embodiment of the invention, a specific epitaxial structure and a specific fast test chip structure are adopted to electrically test different currents to obtain different wavelength values, after the different wavelength values are drawn into a curve as shown in figure 2, the curve is simulated into a function according to the curve, and the corresponding relation between the current density and the wavelength can be obtained according to the function. Optionally, the function, i.e. the corresponding relation between the current density and the wavelength, is W ═ a × J3+b×J2+ c × J + d, where W is the wavelength, J is the current density, and a, b, c, d are constants.
Based on the method, after the LED epitaxial wafer is manufactured, the current density Jx of the LED epitaxial wafer can be measured, and the wavelength Wx of the LED epitaxial wafer can be obtained after the Jx is substituted into the function formula. The required current density Jy of the LED chip can be obtained according to the required current and light emitting area of the LED chip, that is, the required current density of the LED chip is equal to the ratio of the required current of the LED chip to the required light emitting area of the LED chip, wherein the required current and light emitting area of the LED chip are known.
And then substituting the current density Jy of the required LED chip into the function formula to obtain the wavelength Wy of the required LED chip. And obtaining a wavelength k value according to the wavelength Wx of the LED epitaxial wafer and the wavelength Wy of the required LED chip, wherein k is Wx-Wy. That is, deriving the value of the wavelength k from the wavelength of the LED epitaxial wafer and the wavelength of the desired LED chip includes: the value of the wavelength k is equal to the difference between the wavelength of the LED epitaxial wafer and the wavelength of the required LED chip.
And then obtaining the required wavelength range of the LED epitaxial wafer according to the wavelength k value and the required wavelength range of the LED chip. Wherein the desired LED epitaxial wafer wavelength range is equal to the sum of the wavelength k value and the desired LED chip wavelength range. Suppose the desired wavelength range of the LED chip is Wmin～WmaxThe required wavelength range of the LED epitaxial wafer is Wmin+k～Wmax+k。
And then, selecting an LED epitaxial wafer meeting a corresponding wavelength range from the plurality of LED epitaxial wafers according to different wavelength standard deviations, wherein the corresponding wavelength range is smaller than or equal to the required wavelength range of the LED epitaxial wafer.
Specifically, when the standard deviation of the wavelength is std, the corresponding wavelength range is Wmin+k～Wmax+ k, i.e. selected wavelength at Wmin+k～WmaxAn LED epitaxial wafer in the range of + k; when the standard deviation of the wavelength is std +. DELTA, the corresponding wavelength range is Wmin+k+s～Wmax+ k-s; when the standard deviation of the wavelength is std + 2. delta., the corresponding wavelength range is Wmin+k+2s～Wmax+ k-2s, and so on. Wherein s and Δ are constants, and Δ is dependent on the wavelength range Wmin+k～WmaxThe extent of + k.
Figure BDA0001853865470000051
According to the LED epitaxial wafer selection method provided by the embodiment of the invention, the wavelength k value is obtained without manufacturing the LED epitaxial wafer into the LED chip, the wavelength k value can be calculated only according to the current density of the LED epitaxial wafer and the current density of the required LED chip, then the required wavelength range of the LED epitaxial wafer can be obtained according to the wavelength k value and the required wavelength range of the LED chip, the LED epitaxial wafer meeting the corresponding wavelength range is selected from the LED epitaxial wafers according to different wavelength standard differences, the corresponding wavelength range is smaller than or equal to the required wavelength range of the LED epitaxial wafer, and the LED chip with high demand compliance rate and high product concentration rate can be obtained after the selected LED epitaxial wafer is manufactured into the LED chip.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (4)

1. The method for selecting the LED epitaxial wafer is characterized in that the LED epitaxial wafer is a semi-finished product of an LED chip, and comprises the following steps:
obtaining a wavelength k value according to the current density of the LED epitaxial wafer and the current density of the required LED chip;
obtaining a required wavelength range of the LED epitaxial wafer according to the wavelength k value and the required wavelength range of the LED chip;
selecting an LED epitaxial wafer meeting a corresponding wavelength range from the plurality of LED epitaxial wafers according to different wavelength standard deviations, wherein the corresponding wavelength range is smaller than or equal to the required wavelength range of the LED epitaxial wafer;
wherein, the obtaining of the wavelength k value according to the current density of the LED epitaxial wafer and the current density of the required LED chip comprises:
obtaining the wavelength of the LED epitaxial wafer according to the current density of the LED epitaxial wafer and the corresponding relation between the current density and the wavelength;
obtaining the wavelength of the required LED chip according to the current density of the required LED chip and the corresponding relation between the current density and the wavelength;
and obtaining the wavelength k value according to the wavelength of the LED epitaxial wafer and the wavelength of the required LED chip, wherein the wavelength k value is equal to the difference between the wavelength of the LED epitaxial wafer and the wavelength of the required LED chip.
2. The method of claim 1, wherein the current density corresponds to a wavelength of W = a x J3+b×J2+ c × J + d, where W is the wavelength, J is the current density, and a, b, c, d are constants.
3. The method of claim 1, wherein the current density of the desired LED chip is equal to a ratio of the current of the desired LED chip to a light emitting area of the desired LED chip.
4. The method of claim 1, wherein the desired LED epitaxial wafer wavelength range is equal to the sum of the wavelength k value and the desired LED chip wavelength range.
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JPH10261813A (en) * 1997-03-19 1998-09-29 Sumitomo Electric Ind Ltd Substrate for long-wavelength photodetector and epitaxial wafer
US8124996B2 (en) * 2008-08-04 2012-02-28 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
CN101339092B (en) * 2008-08-13 2010-11-10 重庆大学 LED chip / wafer/ epitaxial slice non-contact type checking method and checking device
US9293667B2 (en) * 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
CN102183718B (en) * 2011-02-25 2013-08-14 致茂电子(苏州)有限公司 Method for testing light emitting diode crystal particle
CN102227007A (en) * 2011-05-18 2011-10-26 泉州市金太阳电子科技有限公司 Method for screening LEDs (light-emitting diodes)

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