CN109375435A - Pixel electrode, thin-film transistor array base-plate and display panel - Google Patents
Pixel electrode, thin-film transistor array base-plate and display panel Download PDFInfo
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- CN109375435A CN109375435A CN201811569938.XA CN201811569938A CN109375435A CN 109375435 A CN109375435 A CN 109375435A CN 201811569938 A CN201811569938 A CN 201811569938A CN 109375435 A CN109375435 A CN 109375435A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The application discloses a kind of pixel electrode, thin-film transistor array base-plate and display panel, by make the branch electrodes of pixel electrode both ends width and branch electrodes intermediate width difference to improve the penetrance of pixel electrode each region.
Description
Technical field
This application involves field of display technology more particularly to a kind of pixel electrodes, thin-film transistor array base-plate and display
Panel.
Background technique
Liquid crystal display is the display with high-resolution color screen, has been increasingly becoming various electronic equipments such as
Mobile phone, personal digital assistant (PDA), digital camera, computer screen and laptop screen are widely applied
Display.
The liquid crystal display generallyd use at present usually by thin film transistor base plate, color membrane substrates and is located at film crystal
Liquid crystal layer between pipe substrate and color membrane substrates forms, by glass substrate and electrode on thin film transistor base plate and color membrane substrates
Deng composition.When having electrode on thin film transistor base plate and color membrane substrates, the display of longitudinal electric field mode can be formed, such as
Twisted-nematic formula (Twist Nematic, TN) mode, vertical orientation (Vertical Alignment, VA) mode, and in order to
Solve more quadrant vertical orientation technologies (Multi-domain Vertical Alignment, MVA) of the narrow exploitation in visual angle；Separately
One class display is to form lateral electric field mode, and electrode is only positioned at the side of thin film transistor base plate or color membrane substrates, such as plane
Convert (In-plane switching, IPS) mode, fringe field switching (Fringe Field Switching, FFS) mode
Deng.VA mode display the features such as its high opening, high-resolution, wide viewing angle as large size panels such as LCD TVs to use, so
And the pixel liquid crystal low efficiency for the VA mode display for using conventional method to design, lead to the optics penetrance of liquid crystal display
It is low.As shown in Figure 1, its structural schematic diagram for the thin film transistor (TFT) of VA mode display, the pixel of thin film transistor (TFT) array side
10 structure of electrode is herring-bone form, pixel electrode 10 by and be divided into multiple regions to improve viewing angle characteristic, Fig. 2 is thin shown in Fig. 1
The penetrance figure of 10 different location of pixel electrode of film transistor, wherein Fig. 2 a is picture when the branch electrodes of pixel electrode are wider
The penetrance figure of plain 10 different location of electrode, Fig. 2 b are 10 different location of pixel electrode when the branch electrodes of pixel electrode are relatively narrow
Penetrance figure, as shown in Figure 2, when the branch electrodes of composition pixel electrode 10 are using traditional structure design, it is difficult to keep pixel electric
Extremely each region reaches maximum penetration rate.
Summary of the invention
In view of the deficiencies in the prior art, the application provides a kind of pixel electrode, and it is each which can improve pixel electrode
The penetrance in a region.
To achieve the above object, technical solution is as follows.
A kind of pixel electrode, the pixel electrode include:
Stem portion, the stem portion include horizontal main electrode and vertical main electrode, the horizontal main electrode and institute
Vertical main electrode is stated to be mutually perpendicular to and the pixel electrode is divided into four branch portion areas；
Branch portion, the branch of the branch part in four branch portion areas, in each branch portion area
Portion includes branch electrodes a plurality of parallel and along preset direction arrangement, is provided with slit between the adjacent branch electrodes, described
It is of different size among the width at branch electrodes both ends and the branch electrodes.
In pixel electrodes, the width at the branch electrodes both ends is less than the width among the branch electrodes.
In pixel electrodes, the width of the branch electrodes is gradually reduced from centre to both ends.
In pixel electrodes, the width at the branch electrodes both ends is greater than the width among the branch electrodes.
In pixel electrodes, the width of the branch electrodes is gradually increased from centre to both ends.
In pixel electrodes, the branch electrodes include first end, second end and be located at the first end and institute
The middle part between second end is stated, the width of the first end is greater than the width of the second end, and the width of the second end is big
In the width of the middle part.
In pixel electrodes, the angle between the preset direction and the horizontal main electrode is 45 degree.
In pixel electrodes, the material for preparing of the pixel electrode is one of tin indium oxide or indium zinc oxide.
The another object of the application is to provide a kind of thin-film transistor array base-plate.
A kind of thin-film transistor array base-plate, the thin-film transistor array base-plate include pixel electrodes.
The further object of the application is to provide a kind of display panel, and the display panel includes above-mentioned thin film transistor (TFT) array
Substrate.
The utility model has the advantages that the application provides a kind of pixel electrode, thin-film transistor array base-plate and display panel, by making picture
The branch electrodes both ends width of plain electrode and the intermediate width difference of branch electrodes are to improve penetrating for pixel electrode each region
Rate.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the thin film transistor (TFT) of tradition VA mode display；
Fig. 2 is the penetrance figure of the pixel electrode different location of thin film transistor (TFT) in Fig. 1, and Fig. 2 a is the branch of pixel electrode
The penetrance figure of different location when electrode is wide, Fig. 2 b are the penetrance of different location when the branch electrodes of pixel electrode are narrow
Figure；
Fig. 3 is the structural schematic diagram of the application first embodiment pixel electrode；
Fig. 4 is the penetrance figure that pixel electrode shown in Fig. 3 is applied to pixel electrode different location when VA mode display；
Fig. 5 is the structural schematic diagram of the application second embodiment pixel electrode；
Fig. 6 is the structural schematic diagram of the application 3rd embodiment pixel electrode；
Fig. 7 is the structural schematic diagram of the application fourth embodiment pixel electrode.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description.Obviously, described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, those skilled in the art's every other implementation obtained without creative efforts
Example, shall fall in the protection scope of this application.
The application provides a kind of pixel electrode, which includes:
Stem portion, stem portion include horizontal main electrode and vertical main electrode, and horizontal main electrode and vertical trunk are electric
Pole is mutually perpendicular to and pixel electrode is divided into four branch portion areas；
Branch portion, branch part in four branch portion areas, the branch portion in each branch portion area include it is a plurality of parallel and
Along the branch electrodes of preset direction arrangement, slit, the width at branch electrodes both ends and branch are provided between contiguous branch electrode
It is of different size among electrode.
Among width and branch electrodes of the above scheme by making the branch electrodes both ends of pixel electrode it is of different size with
Improve the penetrance of each region of pixel electrode.
Fig. 3 is the pixel electrode 20 of the application first embodiment, which includes:
Stem portion 200, stem portion 200 include horizontal main electrode 201 and vertical main electrode 202, horizontal main electrode
201 and vertical main electrode 202 be mutually perpendicular to and pixel electrode 20 be divided into four branch portion areas；
Branch portion, branch part in four branch portion areas, the branch portion in each branch portion area include it is a plurality of parallel and
Along the branch electrodes 210 of preset direction arrangement, slit, the width at 210 both ends of branch electrodes are provided between contiguous branch electrode 210
Degree is less than the width among branch electrodes 210.
Branch electrodes 210 are including first end 211 and second end 212 and between first end 211 and second end 212
Middle part 213.In the present embodiment, the width of first end 211 and second end 212 is of same size, the width of first end 211 and
The width of second end 212 is respectively less than the width of middle part 213.In other embodiments, the width and second end of first end 211
212 width can also be different, and the width of first end 211 and the width of second end 212 are respectively less than the width of middle part 213.
In the present embodiment, preset direction and the angle of horizontal main electrode 201 are 45 degree, in other embodiments, in advance
Set direction and the angle of horizontal main electrode 201 may be the angle between 0 degree to 90 degree, and the application does not do specific limit
It is fixed；The branch electrodes 210 in area of contiguous branch portion are with horizontal main electrode 201 or vertical main electrode 202 for center axisymmetrical
Setting.The material for preparing of pixel electrode 20 is one of tin indium oxide or indium zinc oxide；Pixel electrode with a thickness of 1 nanometer-
40 nanometers.
As shown in figure 4, it is that pixel electrode 20 shown in the present embodiment Fig. 3 is applied to Same Wavelength color when VA mode display
Light (identical as the coloured light of penetrance figure of 10 different location of pixel electrode in Fig. 2 is formed) wearing in 20 different location of pixel electrode
Ordinate is respectively 20 lateral position coordinate of pixel electrode (transverse coordinate axis and level on the left of saturating rate figure, Fig. 4 abscissa and Fig. 4
Main electrode 201 is parallel) and lengthwise position coordinate, the right side Fig. 4 ordinate is penetrance coordinate, and as shown in Figure 4,210 institutes are in place
The penetrance highest of (branch electrodes) is set, penetrance herein is close to 0.3；203 positions are (between contiguous branch electrode
Gap) penetrance take second place, penetrance is between 0.22-0.28；The penetrance of 205 positions (periphery of branch portion) is 0.1-
0.2.And in fig. 2 a, the penetrance of 101a (periphery of branch portion) position is 0.1-0.15, and the position 102a is (adjacent
Gap between branch electrodes) penetrance between 0.22-0.28, the penetrance of the position 103a (branch electrodes) is close
0.3；In figure 2b, the penetrance of the position 101b (periphery of branch portion) is 0.18-0.2, the position 102b (branch's electricity
Gap between pole) it is 0.22-0.28, the penetrance of the position 103b (branch electrodes) is close to 0.3.Relative to Fig. 2 a and figure
Penetrance is that region shared by 0.1-0.2 is reduced in entire pixel electrode in 2b, Fig. 4, and penetrance is 0.22-0.28 and penetrates
Rate increases in entire pixel electrode close to region shared by 0.3.In conclusion the present embodiment pixel electrode is applied to VA mould
Pixel electrode can improve the penetrance of each region of pixel electrode when formula display.
Compared with the pixel electrode penetrance of the display based on conventional pixel electrode design, the present embodiment pixel electrode is answered
For the penetrance of each region of pixel electrode can be improved when VA mode display.
Fig. 5 is the pixel electrode 30 of the application second embodiment, which includes:
Stem portion 300, stem portion 300 include horizontal main electrode 301 and vertical main electrode 302, horizontal main electrode
301 and vertical main electrode 302 be mutually perpendicular to and pixel electrode 30 be divided into four branch portion areas；
Branch portion, branch part in four branch portion areas, the branch portion in each branch portion area include it is a plurality of parallel and
Be provided with slit along the branch electrodes 310 of preset direction arrangement, between contiguous branch electrode 310, the width of branch electrodes 310 by
Centre is gradually reduced to both ends.
The opposite two sides of branch electrodes 310 are two opposite camber lines, the recess section of two camber lines be oppositely arranged so that
The width of branch electrodes 311 is gradually reduced from centre to both ends.In the present embodiment, branch electrodes 310 include first end 311,
Second end 312 and the middle part 313 between first end 311 and second end 312, the width and second end of first end 311
312 width is respectively less than the width of middle part 313, and the relative size of the width of the width and second end 312 of first end 311 is not made
It is specific to limit；In the present embodiment, two arc curvatures of a curve are different, and in other embodiments, two arc curvatures of a curve can also
With identical.
Fig. 6 is the pixel electrode 40 of the application 3rd embodiment, which includes:
Stem portion 400, stem portion 400 include horizontal main electrode 401 and vertical main electrode 402, horizontal main electrode
401 and vertical main electrode 402 be mutually perpendicular to and pixel electrode 40 be divided into four branch portion areas；
Branch portion, branch part in four branch portion areas, the branch portion in each branch portion area include it is a plurality of parallel and
Along the branch electrodes 410 of preset direction arrangement, slit, the width at 410 both ends of branch electrodes are provided between contiguous branch electrode 410
Degree is greater than the width among branch electrodes 410.
Branch electrodes 410 are including first end 411 and second end 412 and between first end 411 and second end 412
Middle part 413.In the present embodiment, the width of first end 411 and second end 412 is of same size, the width of first end 411 and
The width of second end 412 is all larger than the width of middle part 413.In other embodiments, the width and second end of first end 411
412 width can also be different, but the width of first end 411 and the width of second end 412 are respectively less than the width of middle part 413,
For example, the width of first end 411 is greater than the width of second end 412, the width of second end 412 is greater than the width of middle part 413.
Fig. 7 is the pixel electrode 50 of the application fourth embodiment, which includes:
Stem portion 500, stem portion 500 include horizontal main electrode 501 and vertical main electrode 502, horizontal main electrode
501 and vertical main electrode 502 be mutually perpendicular to and pixel electrode 50 be divided into four branch portion areas；
Branch portion, branch part in four branch portion areas, the branch portion in each branch portion area include it is a plurality of parallel and
Be provided with slit along the branch electrodes 510 of preset direction arrangement, between contiguous branch electrode 510, the width of branch electrodes 510 by
Centre is gradually increased to both ends.
The opposite two sides of branch electrodes 510 are two opposite camber lines, and the convex section of two camber lines is oppositely arranged to make
The width of branch electrodes 511 is gradually increased from centre to both ends, the of the first ends 511 of branch electrodes 510 and branch electrodes
The width at two ends 512 may be the same or different, and the width of first end 511 and the width of second end 512 are all larger than branch's electricity
The width of the middle part 513 of pole 510.In this application, two arc curvatures of a curve are not identical, in other embodiments, two arcs
Curvature of a curve can also be identical.
The shape of branch electrodes of above-mentioned first embodiment to fourth embodiment is all different, the shape of the application branch electrodes
Shape is not limited to the above embodiments, the width at the both ends of branch electrodes and of different size among branch electrodes, such as branch
The shape of electrode may be diamond shape or arc etc., and the application does not limit specifically.
The application also provides a kind of thin-film transistor array base-plate, and thin-film transistor array base-plate includes above-mentioned pixel electricity
Pole.
Further, above-mentioned thin-film transistor array base-plate further include: a substrate, in the first metal formed on substrate
Layer；Cover the first insulating layer of the first metal layer；In the active layer formed on the first insulating layer；In second formed on active layer
Metal layer；Cover second metal layer and the second insulating layer with via hole；Pixel electrode is in formation in second insulating layer and fills
Via hole with the drain electrode of second metal layer to contact.
In this application, substrate is glass substrate or flexible base board；The first metal layer includes grid and grid cabling；The
Two metal layers include source electrode and drain electrode；First insulating layer and second insulating layer play the role of insulation.
The further object of the application is to provide a kind of display panel, and display panel includes above-mentioned thin film transistor (TFT) array base
Plate.
The technical solution and its core concept for the application that the above embodiments are only used to help understand；This field
Those of ordinary skill is it is understood that it is still possible to modify the technical solutions described in the foregoing embodiments or right
Part of technical characteristic is equivalently replaced；And these are modified or replaceed, it does not separate the essence of the corresponding technical solution
The range of the technical solution of each embodiment of the application.
Claims (10)
1. a kind of pixel electrode, which is characterized in that the pixel electrode includes:
Stem portion, the stem portion include horizontal main electrode and vertical main electrode, the horizontal main electrode and described are hung down
Straight main electrode is mutually perpendicular to and the pixel electrode is divided into four branch portion areas；
Branch portion, the branch portion packet of the branch part in four branch portion areas, in each branch portion area
Branch electrodes a plurality of parallel and along preset direction arrangement are included, are provided with slit, the branch between the adjacent branch electrodes
It is of different size among the width at electrode both ends and the branch electrodes.
2. pixel electrode according to claim 1, which is characterized in that the width at the branch electrodes both ends is less than described point
Width among branch electrode.
3. pixel electrode according to claim 2, which is characterized in that the width of the branch electrodes from centre to both ends by
It is decrescence small.
4. pixel electrode according to claim 1, which is characterized in that the width at the branch electrodes both ends is greater than described point
Width among branch electrode.
5. pixel electrode according to claim 4, which is characterized in that the width of the branch electrodes from centre to both ends by
It is cumulative big.
6. pixel electrode according to claim 1, which is characterized in that the branch electrodes include first end, second end with
And the middle part between the first end and the second end, the width of the first end are greater than the width of the second end
Degree, the width of the second end are greater than the width of the middle part.
7. pixel electrode according to claim 1-6, which is characterized in that the preset direction and the horizontal master
Angle between dry electrode is 45 degree.
8. pixel electrode according to claim 1-6, which is characterized in that the material for preparing of the pixel electrode is
One of tin indium oxide or indium zinc oxide.
9. a kind of thin-film transistor array base-plate, which is characterized in that the thin-film transistor array base-plate includes claim 1-8
Described in any item pixel electrodes.
10. a kind of display panel, which is characterized in that the display panel includes thin film transistor (TFT) array as claimed in claim 9
Substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811569938.XA CN109375435A (en) | 2018-12-21 | 2018-12-21 | Pixel electrode, thin-film transistor array base-plate and display panel |
| PCT/CN2019/071843 WO2020124718A1 (en) | 2018-12-21 | 2019-01-16 | Pixel electrode, thin film transistor array substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811569938.XA CN109375435A (en) | 2018-12-21 | 2018-12-21 | Pixel electrode, thin-film transistor array base-plate and display panel |
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| CN109375435A true CN109375435A (en) | 2019-02-22 |
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| CN201811569938.XA Pending CN109375435A (en) | 2018-12-21 | 2018-12-21 | Pixel electrode, thin-film transistor array base-plate and display panel |
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| WO (1) | WO2020124718A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110673405A (en) * | 2019-09-04 | 2020-01-10 | 深圳市华星光电半导体显示技术有限公司 | Pixel electrode structure and display device |
| CN114660865A (en) * | 2022-03-24 | 2022-06-24 | Tcl华星光电技术有限公司 | Array substrate and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102213872A (en) * | 2010-04-02 | 2011-10-12 | 三星电子株式会社 | Pixel electrode panel, a liquid crystal display panel assembly and methods for manufacturing the same |
| US9772522B2 (en) * | 2015-01-06 | 2017-09-26 | Samsung Display Co., Ltd. | Curved display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7812909B2 (en) * | 2007-04-20 | 2010-10-12 | Samsung Electronics Co., Ltd. | Liquid crystal display |
| KR101494205B1 (en) * | 2008-05-08 | 2015-03-02 | 삼성디스플레이 주식회사 | Display substrate, method for manufacturing the display substrate and display apparatus having the display substrate |
| KR101978312B1 (en) * | 2011-05-02 | 2019-05-15 | 삼성디스플레이 주식회사 | Liquid crystal device alignment layer and methods for manufacturing the same |
| KR101902984B1 (en) * | 2010-04-02 | 2018-11-14 | 삼성디스플레이 주식회사 | Pixel electrode panel, liquid crystal display panel assembly and methods for manufacturing the same |
| KR101820966B1 (en) * | 2011-10-20 | 2018-01-23 | 삼성디스플레이 주식회사 | Liquid crystal device alignment layer and methods for manufacturing the same |
-
2018
- 2018-12-21 CN CN201811569938.XA patent/CN109375435A/en active Pending
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2019
- 2019-01-16 WO PCT/CN2019/071843 patent/WO2020124718A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102213872A (en) * | 2010-04-02 | 2011-10-12 | 三星电子株式会社 | Pixel electrode panel, a liquid crystal display panel assembly and methods for manufacturing the same |
| US9772522B2 (en) * | 2015-01-06 | 2017-09-26 | Samsung Display Co., Ltd. | Curved display device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110673405A (en) * | 2019-09-04 | 2020-01-10 | 深圳市华星光电半导体显示技术有限公司 | Pixel electrode structure and display device |
| WO2021042471A1 (en) * | 2019-09-04 | 2021-03-11 | 深圳市华星光电半导体显示技术有限公司 | Pixel electrode structure and display device |
| CN114660865A (en) * | 2022-03-24 | 2022-06-24 | Tcl华星光电技术有限公司 | Array substrate and display device |
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| WO2020124718A1 (en) | 2020-06-25 |
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Application publication date: 20190222 |